KR900008697A - 반도체 웨이퍼 제조방법 - Google Patents

반도체 웨이퍼 제조방법

Info

Publication number: KR900008697A
Authority: KR; South Korea
Prior art keywords: semiconductor wafer; wafer manufacturing; manufacturing; semiconductor; wafer
Prior art date: 1988-11-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

KR1019890016068A

Other languages

English (en)

Other versions

KR0144461B1 (ko

Inventor

아쯔오 야기

다께시 마쯔시따

마꼬또 하시모또

Original Assignee

소니 가부시끼 가이샤

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-11-09

Filing date

1989-11-07

Publication date

1990-06-03

1988-11-09 Priority claimed from JP28459088A external-priority patent/JP2689536B2/ja

1989-01-17 Priority claimed from JP830089A external-priority patent/JPH02188968A/ja

1989-11-07 Application filed by 소니 가부시끼 가이샤 filed Critical 소니 가부시끼 가이샤

1990-06-03 Publication of KR900008697A publication Critical patent/KR900008697A/ko

1998-08-17 Application granted granted Critical

1998-08-17 Publication of KR0144461B1 publication Critical patent/KR0144461B1/ko

2009-11-07 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H10P52/00—
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
- H10P54/00—
- H10P90/1914—
- H10P95/062—
- H10W10/181—
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 1D charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/012—Bonding, e.g. electrostatic for strain gauges
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/135—Removal of substrate
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/97—Specified etch stop material
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Nanotechnology (AREA)
Physics & Mathematics (AREA)
Mathematical Physics (AREA)
Theoretical Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Mechanical Treatment Of Semiconductor (AREA)
Thin Film Transistor (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)

KR1019890016068A 1988-11-09 1989-11-07 반도체 웨이퍼 제조방법 Expired - Fee Related KR0144461B1 (ko)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
JP284590		1988-11-09
JP28459088A JP2689536B2 (ja)	1988-11-09	1988-11-09	半導体ウエハの製造方法
JP830089A JPH02188968A (ja)	1989-01-17	1989-01-17	半導体装置及びその製造方法
JP8300		1989-01-17

Publications (2)

Publication Number	Publication Date
KR900008697A true KR900008697A (ko)	1990-06-03
KR0144461B1 KR0144461B1 (ko)	1998-08-17

Family

ID=26342793

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019890016068A Expired - Fee Related KR0144461B1 (ko)	1988-11-09	1989-11-07	반도체 웨이퍼 제조방법

Country Status (4)

Country	Link
US (1)	US5051378A (ko)
EP (1)	EP0368584B1 (ko)
KR (1)	KR0144461B1 (ko)
DE (1)	DE68927871T2 (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5071792A (en) *	1990-11-05	1991-12-10	Harris Corporation	Process for forming extremely thin integrated circuit dice
JPH046875A (ja) *	1990-04-24	1992-01-10	Mitsubishi Materials Corp	シリコンウェーハ
DE69127582T2 (de) *	1990-05-18	1998-03-26	Fujitsu Ltd	Verfahren zur Herstellung eines Halbleitersubstrates und Verfahren zur Herstellung einer Halbleiteranordnung unter Verwendung dieses Substrates
US5238865A (en) *	1990-09-21	1993-08-24	Nippon Steel Corporation	Process for producing laminated semiconductor substrate
US5234846A (en) *	1992-04-30	1993-08-10	International Business Machines Corporation	Method of making bipolar transistor with reduced topography
US5334281A (en) *	1992-04-30	1994-08-02	International Business Machines Corporation	Method of forming thin silicon mesas having uniform thickness
US5258318A (en) *	1992-05-15	1993-11-02	International Business Machines Corporation	Method of forming a BiCMOS SOI wafer having thin and thick SOI regions of silicon
US5324687A (en) *	1992-10-16	1994-06-28	General Electric Company	Method for thinning of integrated circuit chips for lightweight packaged electronic systems
US5264395A (en) *	1992-12-16	1993-11-23	International Business Machines Corporation	Thin SOI layer for fully depleted field effect transistors
US5436173A (en) *	1993-01-04	1995-07-25	Texas Instruments Incorporated	Method for forming a semiconductor on insulator device
US5733175A (en)	1994-04-25	1998-03-31	Leach; Michael A.	Polishing a workpiece using equal velocity at all points overlapping a polisher
US5607341A (en)	1994-08-08	1997-03-04	Leach; Michael A.	Method and structure for polishing a wafer during manufacture of integrated circuits
US5577309A (en) *	1995-03-01	1996-11-26	Texas Instruments Incorporated	Method for forming electrical contact to the optical coating of an infrared detector
JP3552427B2 (ja) *	1996-11-18	2004-08-11	株式会社日立製作所	半導体装置の研磨方法
DE19840421C2 (de) *	1998-06-22	2000-05-31	Fraunhofer Ges Forschung	Verfahren zur Fertigung von dünnen Substratschichten und eine dafür geeignete Substratanordnung
JP4316186B2 (ja)	2002-04-05	2009-08-19	シャープ株式会社	半導体装置及びその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4139401A (en) *	1963-12-04	1979-02-13	Rockwell International Corporation	Method of producing electrically isolated semiconductor devices on common crystalline substrate
US3407479A (en) *	1965-06-28	1968-10-29	Motorola Inc	Isolation of semiconductor devices
US3844858A (en) *	1968-12-31	1974-10-29	Texas Instruments Inc	Process for controlling the thickness of a thin layer of semiconductor material and semiconductor substrate
US3623218A (en) *	1969-01-16	1971-11-30	Signetics Corp	Method for determining depth of lapping of dielectrically isolated integrated circuits
US3683491A (en) *	1970-11-12	1972-08-15	Carroll E Nelson	Method for fabricating pinched resistor semiconductor structure
US3755012A (en) *	1971-03-19	1973-08-28	Motorola Inc	Controlled anisotropic etching process for fabricating dielectrically isolated field effect transistor
US4501060A (en) *	1983-01-24	1985-02-26	At&T Bell Laboratories	Dielectrically isolated semiconductor devices
JPS61154142A (ja) *	1984-12-27	1986-07-12	Mitsubishi Electric Corp	半導体装置の製造方法
JPS61159738A (ja) *	1985-01-08	1986-07-19	Oki Electric Ind Co Ltd	誘電体分離基板の研摩方法
JPS6248040A (ja) *	1985-08-28	1987-03-02	Nec Corp	絶縁分離基板及びその製造方法
US4944836A (en) *	1985-10-28	1990-07-31	International Business Machines Corporation	Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
JPS6356936A (ja) *	1986-08-27	1988-03-11	Nec Corp	半導体装置の製造方法
US4735679A (en) *	1987-03-30	1988-04-05	International Business Machines Corporation	Method of improving silicon-on-insulator uniformity
JPS63250838A (ja) *	1987-04-08	1988-10-18	Oki Electric Ind Co Ltd	誘電体分離基板の製造方法
JPS63299359A (ja) *	1987-05-29	1988-12-06	Matsushita Electronics Corp	半導体装置
US4874463A (en) *	1988-12-23	1989-10-17	At&T Bell Laboratories	Integrated circuits from wafers having improved flatness

1989
- 1989-11-06 DE DE68927871T patent/DE68927871T2/de not_active Expired - Fee Related
- 1989-11-06 US US07/432,123 patent/US5051378A/en not_active Expired - Fee Related
- 1989-11-06 EP EP89311454A patent/EP0368584B1/en not_active Expired - Lifetime
- 1989-11-07 KR KR1019890016068A patent/KR0144461B1/ko not_active Expired - Fee Related

Also Published As

Publication number	Publication date
KR0144461B1 (ko)	1998-08-17
EP0368584A3 (en)	1993-02-03
DE68927871D1 (de)	1997-04-24
EP0368584B1 (en)	1997-03-19
US5051378A (en)	1991-09-24
DE68927871T2 (de)	1997-07-03
EP0368584A2 (en)	1990-05-16

Publication	Publication Date	Title
KR880701023A (ko)	1988-04-13	반도체 장치 제조 방법
KR880004552A (ko)	1988-06-04	반도체장치 제조방법
KR900008644A (ko)	1990-06-03	반도체 장치 제조 방법
KR880701461A (ko)	1988-07-27	반도체 소자 제조공정
KR850006258A (ko)	1985-10-02	반도체장치 제조방법
KR920003832A (ko)	1992-02-29	반도체 장치 제조 방법
DE68925374D1 (de)	1996-02-22	Halbleiterherstellungsvorrichtung
KR890015368A (ko)	1989-10-30	반도체장치 제조방법
KR890012373A (ko)	1989-08-26	반도체장치의 제조방법
KR880701457A (ko)	1988-07-27	반도체 장치 제조 방법
KR900012335A (ko)	1990-08-03	반도체장치의 제조방법
KR900008660A (ko)	1990-06-03	반도체장치의 제조방법
KR900015300A (ko)	1990-10-26	반도체장치의 제조방법
KR860000710A (ko)	1986-01-30	반도체장치 제조방법
KR900008628A (ko)	1990-06-03	반도체 제조장치
KR900008697A (ko)	1990-06-03	반도체 웨이퍼 제조방법
KR900019176A (ko)	1990-12-24	반도체장치의 제조방법
KR900012342A (ko)	1990-08-03	반도체장치의 제조방법
KR900012331A (ko)	1990-08-03	반도체장치의 제조방법
KR910001871A (ko)	1991-01-31	반도체 소자 제조방법
KR900013613A (ko)	1990-09-05	반도체장치의 제조방법
KR900013619A (ko)	1990-09-06	반도체장치의 제조방법
KR900011045A (ko)	1990-07-11	반도체장치의 제조방법
KR900007072A (ko)	1990-05-09	반도체장치의 제조방법
KR900015282A (ko)	1990-10-26	반도체 소자의 제조방법

Legal Events

Date	Code	Title	Description
1989-11-07	PA0109	Patent application	St.27 status event code: A-0-1-A10-A12-nap-PA0109
1989-11-07	R17-X000	Change to representative recorded	St.27 status event code: A-3-3-R10-R17-oth-X000
1990-06-03	PG1501	Laying open of application	St.27 status event code: A-1-1-Q10-Q12-nap-PG1501
1994-11-10	A201	Request for examination
1994-11-10	P11-X000	Amendment of application requested	St.27 status event code: A-2-2-P10-P11-nap-X000
1994-11-10	P13-X000	Application amended	St.27 status event code: A-2-2-P10-P13-nap-X000
1994-11-10	PA0201	Request for examination	St.27 status event code: A-1-2-D10-D11-exm-PA0201
1998-02-20	E701	Decision to grant or registration of patent right
1998-02-20	PE0701	Decision of registration	St.27 status event code: A-1-2-D10-D22-exm-PE0701
1998-04-17	GRNT	Written decision to grant
1998-04-17	PR0701	Registration of establishment	St.27 status event code: A-2-4-F10-F11-exm-PR0701
1998-04-17	PR1002	Payment of registration fee	St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1
1998-08-17	PG1601	Publication of registration	St.27 status event code: A-4-4-Q10-Q13-nap-PG1601
2001-03-21	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4
2002-03-18	FPAY	Annual fee payment	Payment date: 20020319 Year of fee payment: 5
2002-03-19	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5
2003-04-18	LAPS	Lapse due to unpaid annual fee
2003-04-18	PC1903	Unpaid annual fee	St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20030418 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE
2004-01-10	PC1903	Unpaid annual fee	St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20030418
2007-02-22	R18-X000	Changes to party contact information recorded	St.27 status event code: A-5-5-R10-R18-oth-X000
2010-01-04	PN2301	Change of applicant	St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301
2018-06-07	P22-X000	Classification modified	St.27 status event code: A-4-4-P10-P22-nap-X000
2021-05-20	PN2301	Change of applicant	St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301
2026-01-06	P22-X000	Classification modified	St.27 status event code: A-4-4-P10-P22-nap-X000