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KR900007129A - 비정질 실리콘 태양전지의 제조방법 - Google Patents

비정질 실리콘 태양전지의 제조방법

Info

Publication number
KR900007129A
KR900007129A KR1019880014032A KR880014032A KR900007129A KR 900007129 A KR900007129 A KR 900007129A KR 1019880014032 A KR1019880014032 A KR 1019880014032A KR 880014032 A KR880014032 A KR 880014032A KR 900007129 A KR900007129 A KR 900007129A
Authority
KR
South Korea
Prior art keywords
manufacturing
solar cell
amorphous silicon
silicon solar
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019880014032A
Other languages
English (en)
Other versions
KR910007465B1 (ko
Inventor
김강원
Original Assignee
삼성전관 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전관 주식회사 filed Critical 삼성전관 주식회사
Priority to KR1019880014032A priority Critical patent/KR910007465B1/ko
Priority to US07/427,192 priority patent/US5034333A/en
Priority to JP1281573A priority patent/JPH031578A/ja
Publication of KR900007129A publication Critical patent/KR900007129A/ko
Application granted granted Critical
Publication of KR910007465B1 publication Critical patent/KR910007465B1/ko
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
KR1019880014032A 1988-10-27 1988-10-27 비정질 실리콘 태양전지의 제조방법 Expired KR910007465B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019880014032A KR910007465B1 (ko) 1988-10-27 1988-10-27 비정질 실리콘 태양전지의 제조방법
US07/427,192 US5034333A (en) 1988-10-27 1989-10-26 Method of manufacturing an amorphous silicon solar cell
JP1281573A JPH031578A (ja) 1988-10-27 1989-10-27 アモルファスシリコン太陽電池の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880014032A KR910007465B1 (ko) 1988-10-27 1988-10-27 비정질 실리콘 태양전지의 제조방법

Publications (2)

Publication Number Publication Date
KR900007129A true KR900007129A (ko) 1990-05-09
KR910007465B1 KR910007465B1 (ko) 1991-09-26

Family

ID=19278804

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880014032A Expired KR910007465B1 (ko) 1988-10-27 1988-10-27 비정질 실리콘 태양전지의 제조방법

Country Status (3)

Country Link
US (1) US5034333A (ko)
JP (1) JPH031578A (ko)
KR (1) KR910007465B1 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3262232B2 (ja) * 1990-09-25 2002-03-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5256887A (en) * 1991-07-19 1993-10-26 Solarex Corporation Photovoltaic device including a boron doping profile in an i-type layer
US5256576A (en) * 1992-02-14 1993-10-26 United Solar Systems Corporation Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer
US5298086A (en) * 1992-05-15 1994-03-29 United Solar Systems Corporation Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby
US5476798A (en) * 1992-06-29 1995-12-19 United Solar Systems Corporation Plasma deposition process with substrate temperature control
JP3081394B2 (ja) 1992-12-11 2000-08-28 キヤノン株式会社 光起電力素子及び発電システム
JP3025122B2 (ja) 1992-12-28 2000-03-27 キヤノン株式会社 光起電力素子及び発電システム
JP2984537B2 (ja) * 1994-03-25 1999-11-29 キヤノン株式会社 光起電力素子
US6468829B2 (en) 2000-05-16 2002-10-22 United Solar Systems Corporation Method for manufacturing high efficiency photovoltaic devices at enhanced depositions rates
JP2001332749A (ja) * 2000-05-23 2001-11-30 Canon Inc 半導体薄膜の形成方法およびアモルファスシリコン太陽電池素子
EP1939947B1 (en) * 2005-08-30 2018-11-21 Kaneka Corporation Silicon-based thin-film photoelectric converter and method of manufacturing the same
JP5409369B2 (ja) * 2006-10-12 2014-02-05 カンブリオス テクノロジーズ コーポレイション ナノワイヤベースの透明導電体およびその適用
CN101355109A (zh) * 2007-07-26 2009-01-28 鸿富锦精密工业（深圳）有限公司 太阳能电池组件及其制造设备
US20100147369A1 (en) * 2008-12-12 2010-06-17 Chien-Min Sung Solar cell having nanodiamond quantum wells
WO2012065957A2 (en) * 2010-11-16 2012-05-24 Oerlikon Solar Ag, Trübbach Improved a-si:h absorber layer for a-si single- and multijunction thin film silicon solar cell

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5815231A (ja) * 1981-07-20 1983-01-28 Matsushita Electric Ind Co Ltd 非晶質半導体の製造方法
JPS59107574A (ja) * 1982-12-13 1984-06-21 Agency Of Ind Science & Technol アモルフアスシリコン太陽電池の製造方法
JPS60192374A (ja) * 1984-03-13 1985-09-30 Sanyo Electric Co Ltd 光起電力装置の製造方法
JPS6193675A (ja) * 1984-10-12 1986-05-12 Sanyo Electric Co Ltd 光起電力装置の製造方法
JPS61160979A (ja) * 1985-01-08 1986-07-21 Sharp Corp 非晶質太陽電池の製造方法
JPS62101083A (ja) * 1985-10-28 1987-05-11 Kanegafuchi Chem Ind Co Ltd 半導体装置の製造方法
JPH0799776B2 (ja) * 1986-02-14 1995-10-25 住友電気工業株式会社 アモルフアスシリコン太陽電池の製造方法

Also Published As

Publication number Publication date
JPH031578A (ja) 1991-01-08
KR910007465B1 (ko) 1991-09-26
US5034333A (en) 1991-07-23

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