KR870011701A - Mes fet의 제조방법 - Google Patents

Mes fet의 제조방법

Info

Publication number: KR870011701A
Authority: KR; South Korea
Prior art keywords: mes fet; fet manufacturing; manufacturing; mes; fet
Prior art date: 1986-05-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

KR1019870004571A

Other languages

English (en)

Other versions

KR910002818B1 (ko

Inventor

히로시 이와사키

Original Assignee

가부시키가이샤 도시바

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-05-09

Filing date

1987-05-09

Publication date

1987-12-26

1987-05-09 Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바

1987-12-26 Publication of KR870011701A publication Critical patent/KR870011701A/ko

1991-05-04 Application granted granted Critical

1991-05-04 Publication of KR910002818B1 publication Critical patent/KR910002818B1/ko

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/061—Manufacture or treatment of FETs having Schottky gates
- H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
- H10D30/0616—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made before the completion of the source and drain regions, e.g. gate-first processes
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/105—Masks, metal
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/14—Schottky barrier contacts

KR1019870004571A 1986-05-09 1987-05-09 Mes fet의 제조방법 Expired KR910002818B1 (ko)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP81-104693		1986-05-09
JP61104693A JPS62262466A (ja)	1986-05-09	1986-05-09	Ｍｅｓ　ｆｅｔの製造方法

Publications (2)

Publication Number	Publication Date
KR870011701A true KR870011701A (ko)	1987-12-26
KR910002818B1 KR910002818B1 (ko)	1991-05-04

Family

ID=14387554

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019870004571A Expired KR910002818B1 (ko)	1986-05-09	1987-05-09	Mes fet의 제조방법

Country Status (5)

Country	Link
US (1)	US5143856A (ko)
EP (1)	EP0244840B1 (ko)
JP (1)	JPS62262466A (ko)
KR (1)	KR910002818B1 (ko)
DE (1)	DE3784761T2 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5187111A (en) *	1985-09-27	1993-02-16	Kabushiki Kaisha Toshiba	Method of manufacturing Schottky barrier gate FET
US5273937A (en) *	1988-01-08	1993-12-28	Kabushiki Kaisha Toshiba	Metal semiconductor device and method for producing the same
US5192701A (en) *	1988-03-17	1993-03-09	Kabushiki Kaisha Toshiba	Method of manufacturing field effect transistors having different threshold voltages
JPH01236657A (ja) *	1988-03-17	1989-09-21	Toshiba Corp	半導体装置の製造方法
JP2549558B2 (ja) *	1989-04-13	1996-10-30	和夫藤田	電動ステージ装置
JPH0410436A (ja) *	1990-04-26	1992-01-14	Mitsubishi Electric Corp	電界効果型トランジスタの製造方法
US5387548A (en) *	1992-06-22	1995-02-07	Motorola, Inc.	Method of forming an etched ohmic contact
JPH0653241A (ja) *	1992-08-03	1994-02-25	Nec Corp	電界効果トランジスタの製造方法
US5379719A (en) *	1993-07-26	1995-01-10	Sandia National Laboratories	Method of deposition by molecular beam epitaxy
US5461244A (en) *	1994-01-03	1995-10-24	Honeywell Inc.	FET having minimized parasitic gate capacitance
KR950034830A (ko) *	1994-04-29	1995-12-28	빈센트 비. 인그라시아	전계 효과 트랜지스터 및 이 트랜지스터의 제조 방법
JP3062421B2 (ja) *	1994-08-22	2000-07-10	松下電器産業株式会社	半導体装置及びその製造方法
US5824575A (en) *	1994-08-22	1998-10-20	Matsushita Electric Industrial Co., Ltd.	Semiconductor device and method of manufacturing the same
KR100480892B1 (ko) *	2002-07-11	2005-04-07	매그나칩 반도체 유한회사	듀얼게이트 로직소자에서의 게이트 형성방법
US20050059260A1 (en) *	2003-09-15	2005-03-17	Haowen Bu	CMOS transistors and methods of forming same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4330343A (en) *	1979-01-04	1982-05-18	The United States Of America As Represented By The Secretary Of The Navy	Refractory passivated ion-implanted GaAs ohmic contacts
US4601095A (en) *	1981-10-27	1986-07-22	Sumitomo Electric Industries, Ltd.	Process for fabricating a Schottky-barrier gate field effect transistor
US4675709A (en) *	1982-06-21	1987-06-23	Xerox Corporation	Quantized layered structures with adjusted indirect bandgap transitions
JPS5950567A (ja) *	1982-09-16	1984-03-23	Hitachi Ltd	電界効果トランジスタの製造方法
DE3381683D1 (de) *	1982-11-29	1990-07-26	Fujitsu Ltd	Feldeffekttransistor und verfahren zu seiner herstellung.
JPS5999717A (ja) *	1982-11-29	1984-06-08	Fujitsu Ltd	半導体装置の製造方法
GB2137806B (en) *	1983-04-05	1986-10-08	Standard Telephones Cables Ltd	Ion implantation in semiconductor bodies
JPS6273673A (ja) *	1985-09-27	1987-04-04	Toshiba Corp	電界効果トランジスタの製造方法
US4735913A (en) *	1986-05-06	1988-04-05	Bell Communications Research, Inc.	Self-aligned fabrication process for GaAs MESFET devices

1986
- 1986-05-09 JP JP61104693A patent/JPS62262466A/ja active Granted
1987
- 1987-05-06 EP EP87106532A patent/EP0244840B1/en not_active Expired - Lifetime
- 1987-05-06 DE DE8787106532T patent/DE3784761T2/de not_active Expired - Fee Related
- 1987-05-09 KR KR1019870004571A patent/KR910002818B1/ko not_active Expired
1988
- 1988-08-29 US US07/238,995 patent/US5143856A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
DE3784761D1 (de)	1993-04-22
EP0244840B1 (en)	1993-03-17
EP0244840A3 (en)	1988-01-07
EP0244840A2 (en)	1987-11-11
KR910002818B1 (ko)	1991-05-04
DE3784761T2 (de)	1993-06-24
US5143856A (en)	1992-09-01
JPS62262466A (ja)	1987-11-14
JPH03774B2 (ko)	1991-01-08

Publication	Publication Date	Title
FI861724A7 (fi)	1986-10-26	Flockulationsprocess.
FI871125A7 (fi)	1987-09-15	Trimerisointimenetelmä.
DE68927860D1 (de)	1997-04-17	Borkarbidherstellung
KR870700614A (ko)	1987-12-30	-1-아릴-2-아실아미도-3-플루오로-1-프로판올의 제조방법
KR880701612A (ko)	1988-11-04	레이저 가공방법
KR880700699A (ko)	1988-04-11	프레스 제어 방법
KR870700615A (ko)	1987-12-30	감마-부티로락톤의 제조방법
IT1182843B (it)	1987-10-05	Metodo di registrazione
KR870011701A (ko)	1987-12-26	Mes fet의 제조방법
DE3675042D1 (de)	1990-11-29	Giessverfahren.
TR24216A (tr)	1991-07-02	Kaliba doekme yoentemi
KR880700339A (ko)	1988-02-22	영역 가공 방법
IT8612426A0 (it)	1986-02-12	Metodo per la fabbricazione di stampi
FI861897A7 (fi)	1986-11-11	Menetelmä rakenne-elementtien valmistamiseksi.
KR880004732A (ko)	1988-06-07	본딩방법
KR880700960A (ko)	1988-04-13	도형 입력 방법
KR880700338A (ko)	1988-02-22	영역 가공방법
KR880700340A (ko)	1988-02-22	영역 가공 방법
ES552806A0 (es)	1987-01-01	Metodo de moldeo superplastico
KR880701245A (ko)	1988-07-26	16α-메틸화공정
KR870000109A (ko)	1987-02-16	인발 다이 제조방법
KR910005482A (ko)	1991-03-30	Mes fet의 제조방법
BR8707074A (pt)	1988-08-02	Processo
FI861166A7 (fi)	1986-09-23	Menetelmä muoto-osien valmistamiseksi.
KR880701468A (ko)	1988-07-27	전지 제조방법

Legal Events

Date	Code	Title	Description
1987-05-09	A201	Request for examination
1987-05-09	PA0109	Patent application	St.27 status event code: A-0-1-A10-A12-nap-PA0109
1987-05-09	PA0201	Request for examination	St.27 status event code: A-1-2-D10-D11-exm-PA0201
1987-05-09	R17-X000	Change to representative recorded	St.27 status event code: A-3-3-R10-R17-oth-X000
1987-12-26	PG1501	Laying open of application	St.27 status event code: A-1-1-Q10-Q12-nap-PG1501
1990-09-25	E902	Notification of reason for refusal
1990-09-25	PE0902	Notice of grounds for rejection	St.27 status event code: A-1-2-D10-D21-exm-PE0902
1990-10-23	T11-X000	Administrative time limit extension requested	St.27 status event code: U-3-3-T10-T11-oth-X000
1990-11-22	T11-X000	Administrative time limit extension requested	St.27 status event code: U-3-3-T10-T11-oth-X000
1990-12-21	P11-X000	Amendment of application requested	St.27 status event code: A-2-2-P10-P11-nap-X000
1990-12-21	P13-X000	Application amended	St.27 status event code: A-2-2-P10-P13-nap-X000
1991-04-08	G160	Decision to publish patent application
1991-05-04	PG1605	Publication of application before grant of patent	St.27 status event code: A-2-2-Q10-Q13-nap-PG1605
1991-08-03	E701	Decision to grant or registration of patent right
1991-08-03	PE0701	Decision of registration	St.27 status event code: A-1-2-D10-D22-exm-PE0701
1991-11-02	GRNT	Written decision to grant
1991-11-02	PR0701	Registration of establishment	St.27 status event code: A-2-4-F10-F11-exm-PR0701
1991-11-02	PR1002	Payment of registration fee	St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1
1994-05-04	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4
1995-05-03	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5
1996-05-02	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6
1997-05-03	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7
1997-12-29	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8
1999-01-05	R18-X000	Changes to party contact information recorded	St.27 status event code: A-5-5-R10-R18-oth-X000
1999-01-12	PN2301	Change of applicant	St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301
1999-03-02	R18-X000	Changes to party contact information recorded	St.27 status event code: A-5-5-R10-R18-oth-X000
1999-03-06	R18-X000	Changes to party contact information recorded	St.27 status event code: A-5-5-R10-R18-oth-X000
1999-04-17	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9
2000-04-28	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 10
2001-04-27	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 11
2001-07-28	R18-X000	Changes to party contact information recorded	St.27 status event code: A-5-5-R10-R18-oth-X000
2002-04-30	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 12
2003-04-30	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 13
2004-03-31	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 14
2005-05-02	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 15
2006-05-02	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 16
2007-04-30	FPAY	Annual fee payment	Payment date: 20070430 Year of fee payment: 17
2007-04-30	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 17
2007-05-10	EXPY	Expiration of term
2007-05-10	PC1801	Expiration of term	St.27 status event code: N-4-6-H10-H14-oth-PC1801 Not in force date: 20070510 Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION
2018-06-15	P22-X000	Classification modified	St.27 status event code: A-4-4-P10-P22-nap-X000
2025-01-02	P22-X000	Classification modified	St.27 status event code: A-4-4-P10-P22-nap-X000
2025-09-30	R18-X000	Changes to party contact information recorded	St.27 status event code: A-5-5-R10-R18-oth-X000