KR870009477A - 반도체장치와 그 제조방법 - Google Patents
반도체장치와 그 제조방법Info
- Publication number
- KR870009477A KR870009477A KR1019870002911A KR870002911A KR870009477A KR 870009477 A KR870009477 A KR 870009477A KR 1019870002911 A KR1019870002911 A KR 1019870002911A KR 870002911 A KR870002911 A KR 870002911A KR 870009477 A KR870009477 A KR 870009477A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0128—Manufacturing their channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0135—Manufacturing their gate conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0144—Manufacturing their gate insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0167—Manufacturing their channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0172—Manufacturing their gate conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0181—Manufacturing their gate insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H10W10/031—
-
- H10W10/30—
-
- H10W20/069—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/031—Diffusion at an edge
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/082—Ion implantation FETs/COMs
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61-68702 | 1986-03-28 | ||
| JP61068702A JPH0812918B2 (ja) | 1986-03-28 | 1986-03-28 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR870009477A true KR870009477A (ko) | 1987-10-27 |
| KR900003831B1 KR900003831B1 (ko) | 1990-06-02 |
Family
ID=13381361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019870002911A Expired KR900003831B1 (ko) | 1986-03-28 | 1987-03-28 | 반도체장치와 그 제조방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US4878096A (ko) |
| EP (1) | EP0242623B1 (ko) |
| JP (1) | JPH0812918B2 (ko) |
| KR (1) | KR900003831B1 (ko) |
| DE (1) | DE3789826T2 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100711557B1 (ko) * | 2004-08-11 | 2007-04-27 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Ｌｄｍｏｓ 트랜지스터를 제조하는 방법 및 그 구조 |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5374840A (en) * | 1989-04-25 | 1994-12-20 | Matsushita Electronics Corporation | Semiconductor device with isolated transistors |
| US5238860A (en) * | 1987-07-10 | 1993-08-24 | Kabushiki Kaisha Toshiba | Semiconductor device having different impurity concentration wells |
| JPH01125971A (ja) * | 1987-11-11 | 1989-05-18 | Seiko Instr & Electron Ltd | Ｃ−ｍｉｓ型半導体装置とその製造方法 |
| JPH01194349A (ja) * | 1988-01-29 | 1989-08-04 | Toshiba Corp | 半導体装置 |
| US4998156A (en) * | 1988-03-25 | 1991-03-05 | General Electric Company | Structure for a complementary-symmetry COMFET pair |
| US5262846A (en) * | 1988-11-14 | 1993-11-16 | Texas Instruments Incorporated | Contact-free floating-gate memory array with silicided buried bitlines and with single-step-defined floating gates |
| GB8907898D0 (en) | 1989-04-07 | 1989-05-24 | Inmos Ltd | Semiconductor devices and fabrication thereof |
| GB2237445B (en) * | 1989-10-04 | 1994-01-12 | Seagate Microelectron Ltd | A semiconductor device fabrication process |
| US5057446A (en) * | 1990-08-06 | 1991-10-15 | Texas Instruments Incorporated | Method of making an EEPROM with improved capacitive coupling between control gate and floating gate |
| US5273926A (en) * | 1991-06-27 | 1993-12-28 | Texas Instruments Incorporated | Method of making flash EEPROM or merged FAMOS cell without alignment sensitivity |
| JP3226053B2 (ja) * | 1992-06-03 | 2001-11-05 | 富士電機株式会社 | 半導体装置の製造方法 |
| US5446300A (en) * | 1992-11-04 | 1995-08-29 | North American Philips Corporation | Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit |
| JPH06314773A (ja) * | 1993-03-03 | 1994-11-08 | Nec Corp | 半導体装置 |
| JPH08172139A (ja) * | 1994-12-19 | 1996-07-02 | Sony Corp | 半導体装置製造方法 |
| DE19526183C1 (de) * | 1995-07-18 | 1996-09-12 | Siemens Ag | Verfahren zur Herstellung von mindestens zwei Transistoren in einem Halbleiterkörper |
| KR980006533A (ko) * | 1996-06-28 | 1998-03-30 | 김주용 | 반도체 장치 및 그 제조방법 |
| TW506119B (en) * | 1998-05-25 | 2002-10-11 | United Microelectronics Corp | Manufacturing method of well |
| US6069048A (en) * | 1998-09-30 | 2000-05-30 | Lsi Logic Corporation | Reduction of silicon defect induced failures as a result of implants in CMOS and other integrated circuits |
| KR100407683B1 (ko) * | 2000-06-27 | 2003-12-01 | 주식회사 하이닉스반도체 | 반도체 소자의 콘택 플러그 형성 방법 |
| JP2003324159A (ja) * | 2002-04-26 | 2003-11-14 | Ricoh Co Ltd | 半導体装置 |
| JP4437388B2 (ja) * | 2003-02-06 | 2010-03-24 | 株式会社リコー | 半導体装置 |
| US7544558B2 (en) * | 2006-03-13 | 2009-06-09 | Bcd Semiconductor Manufacturing Limited | Method for integrating DMOS into sub-micron CMOS process |
| RU2497229C2 (ru) * | 2011-12-07 | 2013-10-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Кабардино-Балкарский государственный университет им. Х.М. Бербекова | Способ изготовления полупроводникового прибора |
| US8941188B2 (en) | 2012-03-26 | 2015-01-27 | Infineon Technologies Austria Ag | Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor body |
| US9324762B1 (en) * | 2015-03-26 | 2016-04-26 | Himax Imaging Limited | Process of forming a semiconductor device |
| TWI585960B (zh) * | 2015-03-27 | 2017-06-01 | 恆景科技股份有限公司 | 形成半導體元件及影像感測器的製程 |
| US11069777B1 (en) * | 2020-06-09 | 2021-07-20 | Monolithic Power Systems, Inc. | Manufacturing method of self-aligned DMOS body pickup |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4214359A (en) * | 1978-12-07 | 1980-07-29 | Bell Telephone Laboratories, Incorporated | MOS Devices having buried terminal zones under local oxide regions |
| US4403395A (en) * | 1979-02-15 | 1983-09-13 | Texas Instruments Incorporated | Monolithic integration of logic, control and high voltage interface circuitry |
| JPS55160443A (en) * | 1979-05-22 | 1980-12-13 | Semiconductor Res Found | Manufacture of semiconductor integrated circuit device |
| US4344081A (en) * | 1980-04-14 | 1982-08-10 | Supertex, Inc. | Combined DMOS and a vertical bipolar transistor device and fabrication method therefor |
| JPS57149775A (en) * | 1981-03-11 | 1982-09-16 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS59215766A (ja) * | 1983-05-24 | 1984-12-05 | Seiko Instr & Electronics Ltd | Ｍｏｓ集積回路装置 |
| BE897139A (nl) * | 1983-06-27 | 1983-12-27 | Bell Telephone Mfg Cy Nov | Proces voor het maken van een halfgeleider-inrichting en inrichting hierdoor verkregen |
| US4609413A (en) * | 1983-11-18 | 1986-09-02 | Motorola, Inc. | Method for manufacturing and epitaxially isolated semiconductor utilizing etch and refill technique |
| JPS60161658A (ja) * | 1984-02-01 | 1985-08-23 | Hitachi Micro Comput Eng Ltd | 半導体集積回路装置 |
| JPH0618255B2 (ja) * | 1984-04-04 | 1994-03-09 | 株式会社東芝 | 半導体装置 |
| US4626882A (en) * | 1984-07-18 | 1986-12-02 | International Business Machines Corporation | Twin diode overvoltage protection structure |
| FR2571178B1 (fr) * | 1984-09-28 | 1986-11-21 | Thomson Csf | Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication |
| IT1213234B (it) * | 1984-10-25 | 1989-12-14 | Sgs Thomson Microelectronics | Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos. |
| JPS62130552A (ja) * | 1985-12-02 | 1987-06-12 | Mitsubishi Electric Corp | 半導体集積回路装置 |
| JPH05215277A (ja) * | 1991-03-28 | 1993-08-24 | Nippon Steel Corp | 形状記憶合金製パイプ用継手とその製造方法 |
| JPH05267580A (ja) * | 1992-03-24 | 1993-10-15 | Fuji Electric Co Ltd | 半導体装置 |
-
1986
- 1986-03-28 JP JP61068702A patent/JPH0812918B2/ja not_active Expired - Lifetime
-
1987
- 1987-03-18 US US07/027,406 patent/US4878096A/en not_active Expired - Lifetime
- 1987-03-25 DE DE3789826T patent/DE3789826T2/de not_active Expired - Lifetime
- 1987-03-25 EP EP87104400A patent/EP0242623B1/en not_active Expired - Lifetime
- 1987-03-28 KR KR1019870002911A patent/KR900003831B1/ko not_active Expired
-
1989
- 1989-09-26 US US07/413,006 patent/US5108944A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100711557B1 (ko) * | 2004-08-11 | 2007-04-27 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Ｌｄｍｏｓ 트랜지스터를 제조하는 방법 및 그 구조 |
Also Published As
| Publication number | Publication date |
|---|---|
| US4878096A (en) | 1989-10-31 |
| JPH0812918B2 (ja) | 1996-02-07 |
| KR900003831B1 (ko) | 1990-06-02 |
| JPS62226667A (ja) | 1987-10-05 |
| EP0242623A3 (en) | 1988-05-04 |
| US5108944A (en) | 1992-04-28 |
| DE3789826T2 (de) | 1994-09-22 |
| DE3789826D1 (de) | 1994-06-23 |
| EP0242623A2 (en) | 1987-10-28 |
| EP0242623B1 (en) | 1994-05-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR870011686A (ko) | 반도체장치 및 그 제조방법 | |
| KR890700922A (ko) | 반도체 장치와 그 제조방법 | |
| KR880013254A (ko) | 반도체장치 및 그 제조방법 | |
| KR910007164A (ko) | 반도체장치 및 그 제조방법 | |
| KR870009477A (ko) | 반도체장치와 그 제조방법 | |
| KR880701023A (ko) | 반도체 장치 제조 방법 | |
| KR880004552A (ko) | 반도체장치 제조방법 | |
| KR910008793A (ko) | 반도체장치 및 그 제조방법 | |
| KR860001495A (ko) | 반도체장치 및 그 제조방법 | |
| KR900019215A (ko) | 반도체장치 및 그의 제조방법 | |
| KR860006844A (ko) | 반도체장치 및 그 제조방법 | |
| KR920003833A (ko) | 반도체 장치 제조 방법 및 시스템 | |
| KR910003787A (ko) | 반도체장치 및 반도체장치의 제조방법 | |
| KR900008644A (ko) | 반도체 장치 제조 방법 | |
| DE68928448D1 (de) | Halbleitervorrichtung und Herstellungsverfahren | |
| KR880701457A (ko) | 반도체 장치 제조 방법 | |
| KR840008214A (ko) | 반도체장치 및 그 제조방법 | |
| KR890004403A (ko) | 반도체 장치 및 제조방법 | |
| KR890015368A (ko) | 반도체장치 제조방법 | |
| KR890015360A (ko) | 반도체장치 및 그 제조방법 | |
| KR890004398A (ko) | 반도체장치 및 그의 제조방법 | |
| KR870008394A (ko) | 반도체장치 및 그 제조방법 | |
| KR890004428A (ko) | 수지밀폐형소자 및 그 제조방법 | |
| KR850000808A (ko) | 반도체장치 및 그 제조방법 | |
| KR910001871A (ko) | 반도체 소자 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| G160 | Decision to publish patent application | ||
| PG1605 | Publication of application before grant of patent |
St.27 status event code: A-2-2-Q10-Q13-nap-PG1605 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 10 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 11 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 12 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 13 |
|
| FPAY | Annual fee payment |
Payment date: 20030530 Year of fee payment: 14 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 14 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20040603 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20040603 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |