KR20200061757A - Display apparatus - Google Patents

Abstract

A display device according to an exemplary embodiment of the present specification includes a substrate, a thin film transistor on a substrate, a light emitting element on the thin film transistor, a sealing portion on the light emitting element, and a first connection portion of the touch sensor portion on the sealing portion, the first A first touch insulating layer disposed on the connection unit and including a contact hole exposing the first connection unit, a plurality of first touch electrodes and a plurality of second touch electrodes, and a plurality of touch sensor units on the first touch insulation layer A first touch electrode and a second touch insulating layer on the plurality of second touch electrodes may be included, and the plurality of first touch electrodes may be connected to the first connection unit through contact holes of the first touch insulating layer.

Description

Display device {DISPLAY APPARATUS}

The present specification relates to a display device including a touch sensor unit.

As the information society develops, the demand for a display device for displaying images is increasing in various forms, a liquid crystal display device (LCD), an organic light emitting display device (OLED), Various types of display devices such as a quantum dot light emitting display device (QLED) and an inorganic light emitting display device are used.

Among the above display devices, the quantum dot light emitting display device, the inorganic light emitting display device, and the organic light emitting display device are self-luminous elements, and have excellent response speed, viewing angle, color reproducibility, etc. and can be thinly spherical.

In addition, the display device may operate by receiving a user's command through various input devices such as a keyboard and a mouse. The touch panel display device enables an intuitive and convenient user input by touching the screen of the display device. It is being developed as an input device. The touch panel is disposed on the screen of the display device, and the user can input a user command by touching a specific point on the screen of the display device. Since the touch panel detects a touch coordinate, it may be referred to as a touch sensor unit.

In addition, the display device has a problem in that the touch sensor unit is added to touch the screen of the display device, and the process is complicated and the production time is increased.

An object of the present specification is to provide a display device including a touch sensor unit capable of simplifying a process.

A display device according to an exemplary embodiment of the present specification includes a substrate, a thin film transistor on a substrate, a light emitting element on the thin film transistor, a sealing portion on the light emitting element, and a first connection portion of the touch sensor portion on the sealing portion, the first A first touch insulating layer disposed on the connection unit and including a contact hole exposing the first connection unit, a plurality of first touch electrodes and a plurality of second touch electrodes, and a plurality of touch sensor units on the first touch insulation layer A first touch electrode and a second touch insulating layer on the plurality of second touch electrodes, and the plurality of first touch electrodes provide a display device connected to the first connection unit through a contact hole of the first touch insulating layer Is to do.

The display device according to the exemplary embodiment of the present specification includes a substrate, a thin film transistor on a substrate, a light emitting element on the thin film transistor, a first inorganic encapsulation layer on the light emitting element, and a third inorganic on the first inorganic encapsulation layer. On the first connection, the third inorganic encapsulation layer, the second organic encapsulation layer between the encapsulation layer, the first inorganic encapsulation layer and the third inorganic encapsulation layer, the touch sensor portion between the second organic encapsulation layer and the third inorganic encapsulation layer It is to provide a display device including a plurality of first touch electrodes and a plurality of second touch electrodes, and a touch insulating layer on the plurality of first touch electrodes and the plurality of second touch electrodes.

According to the exemplary embodiment of the present specification, a display device including a touch sensor unit capable of simplifying a process and reducing manufacturing cost, and a manufacturing method thereof can be provided.

According to an embodiment of the present specification, a process may be simplified by disposing a touch sensor unit on an encapsulation portion of the display device. In addition, the thickness of the display device can be reduced.

In the display device according to the exemplary embodiment of the present specification, the first connection portion of the touch sensor unit is disposed between the second organic encapsulation layer and the third inorganic encapsulation layer of the encapsulation unit, thereby reducing the thickness of the touch insulation layer. And, since it is possible to reduce the manufacturing process step, there is an effect that can also reduce the production cost. By using the third inorganic encapsulation layer of the encapsulation portion as a touch insulation layer, the overall thickness of the touch insulation layer is reduced, so that the display device can be made thinner. And, by simplifying the process of forming the touch insulating layer, it is possible to reduce the production cost.

1 is a schematic plan view of a display device according to an exemplary embodiment of the present specification.
2 is a circuit diagram illustrating pixels of a display device according to an exemplary embodiment of the present specification.
3 is a plan view illustrating a touch sensor unit of a display device according to an exemplary embodiment of the present specification.
4 is a cross-sectional view illustrating a display device according to an exemplary embodiment of the present specification.
5 is a cross-sectional view showing a display device according to another exemplary embodiment of the present specification.

Hereinafter, exemplary embodiments of the display device according to the exemplary embodiment of the present specification will be described in detail. In adding reference numerals to the components of each drawing, the same components may have the same reference numerals as possible even though they are displayed on different drawings. In addition, in describing embodiments of the present specification, when it is determined that detailed descriptions of related well-known configurations or functions may obscure the subject matter of the present invention, detailed descriptions thereof may be omitted.

In addition, in describing components of the display device according to the exemplary embodiment of the present specification, terms such as first, second, A, B, (a), and (b) may be used. These terms are only for distinguishing the component from other components, and the essence, order, order, or number of the component is not limited by the term. When a component is described as being "connected", "coupled" or "connected" to another component, the component may be directly connected to or connected to the other component, but different components between each component It will be understood that the "intervenes" may be, or each component may be "connected", "coupled" or "connected" through other components.

1 is a schematic plan view illustrating an embodiment of a display device according to an exemplary embodiment of the present specification.

Referring to FIG. 1, the display device 100 may include a display panel 11, a touch sensor unit 12, a display driver 14a, a touch driver 14b, and a control unit 15.

The display panel 11 may include a plurality of pixels P arranged in a matrix form. Each pixel P may include a light emitting diode (LED) and a pixel circuit that supplies driving current to the light emitting device (LED). Referring to FIG. 2, the pixel circuit may receive a data signal Vdata in response to a gate signal to generate a driving current and supply it to a light emitting device (LED). Also, the display panel 11 may be driven by receiving a plurality of voltages. The plurality of voltages transmitted to the display panel 11 may include a first voltage EVDD and a second voltage EVSS having a lower voltage level than the first voltage EVDD. The driving current may flow in the display panel 11 by the first voltage EVDD and the second voltage EVSS. The first voltage EVDD may be supplied for each pixel column, and the second voltage EVSS may be a common voltage commonly supplied to the plurality of pixels P.

The touch sensor unit 12 may be disposed on the display panel 11 and sense a user's touch. Here, the touch does not only mean the physical touch of the user, but may include approaching at regular intervals.

The display driver 14a may transfer a gate signal and a data signal Vdata to the display panel 11. The display driver 14a may receive an image signal and generate a data signal Vdata. Here, the number of display drivers 14a is shown as one, but is not limited thereto, and the number may be determined according to the size or resolution of the display panel 11. The display driver 14a may be implemented as an integrated circuit.

The touch driver 14b may transmit a touch driving signal to the touch sensor unit 12 and receive a touch sensing signal in response to the touch driving signal. The touch driver 14b may be implemented as an integrated circuit.

The control unit 15 may control the display driver 14a and the touch driver 14b, respectively. Also, the control unit 15 may supply a video signal to the display driver 14a.

2 is a circuit diagram illustrating a pixel P according to an exemplary embodiment of the present specification.

Referring to FIG. 2, the pixel P may include a pixel circuit including a light emitting device (LED), first to third transistors (T1 to T3 ), and a capacitor (C1 ). Here, the first transistor T1 may be a driving transistor that drives a driving current in the light emitting element (LED).

In the first transistor T1, the first electrode is connected to the first voltage line VL1 to receive the first voltage EVDD, the second electrode is connected to the second node N2, and the gate electrode is the first node ( N1). The second transistor T2 may have a first electrode connected to the data line DL, a second electrode connected to the first node N1, and a gate electrode connected to the gate line GL. In addition, the third transistor T3 may have a first electrode connected to a second node N2, a second electrode connected to a second voltage line VL2, and a third electrode connected to a sensing control signal line SEL. have. Here, the sensing control signal line SEL may be a gate line GL. In the light emitting device (LED), the anode electrode may be connected to the second node N2 and the second voltage EVSS may be transmitted to the cathode electrode. Therefore, the cathode electrode can be connected to the second voltage line. In addition, the driving current supplied through the first transistor T1 may flow in the light emitting device (LED). Further, the capacitor C1 may be connected between the first node N1 and the second node N2 and maintain the voltage applied to the first node N1. The first voltage line VL1 may receive the first voltage EVDD and the second voltage line VL2 may receive the first reference voltage Vref1.

3 is a plan view illustrating a touch sensor unit according to embodiments of the present specification.

Referring to FIG. 3, the touch sensor unit is disposed on the display panel 11 and may include a plurality of touch electrodes. In addition, the plurality of touch electrodes may include a plurality of first touch electrodes 323a and a plurality of second touch electrodes 323b. The plurality of first touch electrodes 323a may be touch driving electrodes. Also, the plurality of second touch electrodes 323b may be touch sensing electrodes. The plurality of first touch electrodes 323a are connected in a row direction by the first connection unit 322a to form a plurality of electrode rows, and the plurality of second touch electrodes 323b are vertically connected by the second connection unit 322b. It may be connected in a direction to form a plurality of electrode rows. Here, although it is illustrated that the plurality of first touch electrodes 323a and the plurality of second touch electrodes 323b are disposed in a 4 x 3 form, the present invention is not limited thereto. The first touch electrodes 323a may receive a touch driving signal, and the second touch electrodes 323b may transmit a touch sensing signal corresponding to the touch driving signal. The first touch electrodes 323a and the second touch electrodes 323b may be formed on the same layer on the display panel 11. However, it is not limited thereto.

The first connection unit 322a may allow one first touch electrode 323a to be connected to the other first touch electrode 323a. Also, the second connection unit 322b may allow one second touch electrode 323b to be connected to another second touch electrode 323b. The first connection portion 322a and the second connection portion 322b may be disposed to intersect each other with an insulating layer interposed therebetween. For example, when the first touch electrodes 323a and the second touch electrodes 323b are disposed on the same layer, the first touch electrodes 323a and the second touch electrodes 323b are directly connected. In order not to be, the first connection part 322a connecting the first touch electrodes 323a may be formed on a different layer from the first touch electrodes 323a and the second touch electrodes 323b. Also, the first connection unit 322a may be connected to the first touch electrodes 323a through a contact hole. In addition, the second connection part 322b connecting the second touch electrodes 323b may be disposed on the same layer as the first touch electrode 323a and the second touch electrode 323b, and the second connection part 322b The second touch electrodes 323b may be integrally connected to each other. Accordingly, an insulating layer may be disposed between the first connection portion 322a connecting the first touch electrodes 323a and the second connection portion 322b connecting the second touch electrodes 323b.

Also, the first touch electrode 323a and the second touch electrode 323b may be formed by patterning a conductive metal layer. In addition, the first touch electrode 323a and the second touch electrode 323b may be formed of a transparent material such as Indium Tin Oxide (ITO). Further, the patterned first touch electrode 323a and the second touch electrode 323b may include an electrode pattern formed in a mesh form, and the first touch electrode 323a and the second touch electrode 323b It may include a plurality of openings. Light emitted from the display device 100 may be transmitted to the outside through the first touch electrode 323a and the second touch electrode 323b made of ITO electrodes. However, the present invention is not limited thereto, and light emitted from the display device 100 may be emitted to the outside through a plurality of openings included in the first touch electrode 323a and the second touch electrode 323b.

The patterns of the first touch electrode 323a and the second touch electrode 323b formed in a mesh form may be referred to as touch electrode wiring. In addition, the first touch electrode 323a may be connected to driving lines 321a and 321b that allow a driving signal to be applied to the touch electrode. Also, the second touch electrode 323b may be connected to a sensing line 321c through which a sensing signal generated in response to a touch sensed by the touch electrode is transmitted.

4 is a cross-sectional view illustrating a display device according to an exemplary embodiment of the present specification.

Referring to FIG. 4, the display device 100 according to an exemplary embodiment of the present specification includes a substrate 110, a first buffer layer 111, a first thin film transistor 120, a second thin film transistor 130, and a storage capacitor ( 140), the first gate insulating layer 112, the first interlayer insulating layer 113, the second buffer layer 114, the second gate insulating layer 115, the second interlayer insulating layer 116, the first protective layer (117), second protective layer 118, connecting electrode 150, bank 180, first auxiliary electrode 160, spacer 190, light emitting device 220, encapsulation unit 220, touch insulation A layer 311 and a touch sensor unit 320 may be included.

The substrate 110 may support various components of the display device 100. The substrate 110 may be made of glass or a plastic material having flexibility. When the substrate 110 is made of a plastic material, for example, it may be made of polyimide (PI). When the substrate 110 is made of polyimide (PI), the manufacturing process of the display device proceeds in a situation in which a supporting substrate made of glass is disposed under the substrate 110, and after the manufacturing process of the display device is completed, the supporting substrate It can be released. In addition, after the support substrate is released, a back plate for supporting the substrate 110 may be disposed under the substrate 110.

When the substrate 110 is made of polyimide (PI), the moisture component penetrates the substrate 110 made of polyimide (PI) and penetrates the first thin film transistor 120 or the light emitting structure 200 to display the device. The performance of (100) can be reduced. The display device 100 according to the exemplary embodiment of the present specification may be formed of double polyimide (PI) to prevent deterioration of the performance of the display device 100 due to moisture permeation. And, by forming an inorganic film between the two polyimide (PI), it is possible to improve the reliability of product performance by blocking the moisture component from passing through the lower polyimide (PI).

In addition, when forming an inorganic film between two polyimides (PI), the charge charged in the polyimide (PI) disposed below forms a back bias to form the first thin film transistor 120 Can affect. Therefore, it is necessary to form a separate metal layer in order to block the charge charged in the polyimide (PI). However, the display device 100 according to an exemplary embodiment of the present disclosure forms an inorganic film between two polyimides (PI), thereby blocking electric charges charged in the polyimide (PI) disposed below. Can improve the reliability. In addition, since the process of forming a metal layer to block the charge charged in the polyimide (PI) can be omitted, the process can be simplified and the production cost can be reduced.

The first buffer layer 111 may be disposed on the substrate 110. The first buffer layer 111 may be formed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or multiple layers thereof. The first buffer layer 111 may improve adhesion between the layers formed on the first buffer layer 111 and the substrate 110, and may serve to block alkali components and the like flowing out of the substrate 110. In addition, the first buffer layer 111 is not an essential component, and may be omitted based on the type and material of the substrate 110 and the structure and type of the thin film transistor.

According to one embodiment of the present specification, the first buffer layer 111 may be formed of a multilayer formed by alternating silicon dioxide (SiO ₂ ) and silicon nitride (SiNx). In addition, the plurality of other layers except for the upper layer contacting the first active layer 121 of the first thin film transistor 120 in the first buffer layer 111 formed of a plurality of layers may all have the same thickness.

The first thin film transistor 120 may be disposed on the first buffer layer 111. The first thin film transistor 120 may include a first active layer 121, a first gate electrode 124, a first source electrode 122 and a first drain electrode 123. Here, according to the design of the pixel circuit, the first source electrode 122 may be a drain electrode, and the first drain electrode 123 may be a source electrode. The first active layer 121 of the first thin film transistor 120 may be disposed on the first buffer layer 111.

The first active layer 121 may include low temperature poly-silicon (LTPS). Since the polysilicon material has high mobility (over 100 cm 2 /Vs), low energy consumption, and excellent reliability, it can be applied to a gate driver and/or multiplexer (MUX) for driving elements driving thin film transistors for display elements. , May be applied as an active layer of a driving thin film transistor in the display device according to the embodiment, but is not limited thereto. For example, it may be applied as an active layer of a switching thin film transistor according to characteristics of a display device. The first active layer 121 is formed by depositing an amorphous silicon (a-Si) material on the first buffer layer 111, and forming polysilicon in a manner of performing a dehydrogenation process and a crystallization process, and patterning the polysilicon. Can be formed. The first active layer 121 includes a first channel region 121a in which a channel is formed when the first thin film transistor 120 is driven, a first source region 121b on both sides of the first channel region 121a, and a first. The drain region 121c may be included. The first source region 121b refers to a portion of the first active layer 121 connected to the first source electrode 122, and the first drain region 121c is the first active connected to the first drain electrode 123 It means the part of the layer 121. The first source region 121b and the first drain region 121c may be configured by ion doping (impurity doping) of the first active layer 121. The first source region 121b and the first drain region 121c may be generated by ion doping the polysilicon material, and the first channel region 121a may mean a portion left of the polysilicon material without being ion-doped. have.

The first gate insulating layer 112 may be disposed on the first active layer 121 of the first thin film transistor 120. The first gate insulating layer 112 may be formed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or multiple layers thereof. Each of the first source electrode 122 and the first drain electrode 123 of the first thin film transistor 120 is formed on the first gate insulating layer 112 of the first active layer 121 of the first thin film transistor 120. Contact holes for connecting to the first source region 121b and the first drain region 121c may be formed.

The first gate electrode 124 of the first thin film transistor 120 and the first capacitor electrode 141 of the storage capacitor 140 may be disposed on the first gate insulating layer 112.

The first gate electrode 124 and the first capacitor electrode 141 are molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), and nickel (Ni) , And neodymium (Nd), or a single layer or multiple layers of alloys thereof. The first gate electrode 124 may be formed on the first gate insulating layer 112 so as to overlap the first channel region 121a of the first active layer 121 of the first thin film transistor 120. The first capacitor electrode 141 may be omitted based on the driving characteristics of the display device 100 and the structure and type of the thin film transistor. The first gate electrode 124 and the first capacitor electrode 141 may be formed by the same process. In addition, the first gate electrode 124 and the first capacitor electrode 141 may be formed of the same material, or may be formed on the same layer.

The first interlayer insulating layer 113 may be disposed on the first gate insulating layer 112, the first gate electrode 124, and the first capacitor electrode 141. The first interlayer insulating layer 113 may be composed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or a multi-layer thereof. A contact hole for exposing the first source region 121b and the first drain region 121c of the first active layer 121 of the first thin film transistor 120 may be formed in the first interlayer insulating layer 113. have.

The second capacitor electrode 142 of the storage capacitor 140 may be disposed on the first interlayer insulating layer 113. The second capacitor electrode 142 is any of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd) It may be formed of a single layer or multiple layers of one or alloys thereof. The second capacitor electrode 142 may be formed on the first interlayer insulating layer 113 so as to overlap the first capacitor electrode 141. In addition, the second capacitor electrode 142 may be formed of the same material as the first capacitor electrode 141. The second capacitor electrode 142 may be omitted based on the driving characteristics of the display device 100 and the structure and type of the thin film transistor.

The second buffer layer 114 may be disposed on the first interlayer insulating layer 113 and the second capacitor electrode 142. The first buffer layer 114 may be composed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or a multi-layer thereof. A contact hole for exposing the first source region 121b and the first drain region 121c of the first active layer 121 of the first thin film transistor 120 may be formed in the second buffer layer 114. In addition, a contact hole for exposing the second capacitor electrode 142 of the storage capacitor 140 may be formed.

The second active layer 131 of the second thin film transistor 130 may be disposed on the second buffer layer 114. The second thin film transistor 130 includes a second active layer 131, a second gate insulating layer 115, a second gate electrode 134, a second source electrode 132 and a second drain electrode 133 can do. Here, according to the design of the pixel circuit, the second source electrode 132 may be a drain electrode, and the second drain electrode 133 may be a source electrode.

The second active layer 131 includes a second channel region 131a in which a channel is formed when the second thin film transistor 130 is driven, a second source region 131b and a second side in both sides of the second channel region 131a. The drain region 131c may be included. The second source region 131b means a portion of the second active layer 131 in contact with the second source electrode 132, and the second drain region 131c is in contact with the second drain electrode 133. 2 may mean a portion of the active layer 131.

The second active layer 131 may be formed of an oxide semiconductor. Since the oxide semiconductor material has a larger bandgap compared to the silicon material, electrons cannot cross the bandgap in the off state, and accordingly, the off-current is low. Therefore, the thin film transistor including the active layer made of an oxide semiconductor may be suitable for a switching thin film transistor having a short on time and a long off time, but is not limited thereto. Depending on the characteristics of the display device, it may be applied as a driving thin film transistor. In addition, since the off-current is small, the size of the auxiliary capacitance can be reduced, which is suitable for a high-resolution display device. For example, the second active layer 131 is made of a metal oxide, and may be made of various metal oxides, such as indium-gallium-zinc-oxide (IGZO). The second active layer 131 of the second thin film transistor 130 is described as being formed on the basis of the IGZO layer on the assumption that it is made of IGZO among various metal oxides, but is not limited thereto and is not IGZO, but IZO (indium-zinc- It may be formed of other metal oxides such as oxide (indium-gallium-tin-oxide), IGTO, or indium-gallium-oxide (IGO).

The second active layer 131 may be formed by depositing a metal oxide on the second buffer layer 114, performing a heat treatment process for stabilization, and then patterning the metal oxide.

An insulating material layer and a metal material layer may be sequentially formed on the entire surface of the substrate including the second active layer 131, and a photoresist pattern may be formed on the metal material layer.

The insulating material layer may be formed using a chemical vapor deposition (CVD) method, and the metal material layer may be formed using a sputtering method.

The second gate electrode 134 may be formed by wet etching the metal material layer using the photoresist pattern PR as a mask. The wet etching solution for etching the metal material layer includes molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), and nickel (Ni) constituting the metal material layer. , And materials that selectively etch neodymium (Nd) or their alloys and do not etch the insulating material layer may be used.

The second gate insulating layer 115 may be formed by dry etching the insulating material layer using the photoresist pattern PR and the second gate electrode 134 as a mask.

Through the dry etching process, the insulating material layer may be etched to form a pattern of the second gate insulating layer 115 on the second active layer 131. In addition, a portion of the second active layer 131 exposed by the patterned second gate insulating layer 115 may be conductive by a dry etching process.

Corresponding to the region where the second gate electrode 134 is formed, the second channel region 131a and the second source region 131b that are conductor-processed at both ends of the non-conducting second channel region 131a and the second active layer 131, respectively. The second active layer 131 including the drain region 131c may be formed.

The second source region 131b and the second drain region 131c of the conductive second active layer 131 have low resistance, so that device performance of the second thin film transistor 130 may be improved. An effect in which the reliability of the display device 100 according to the exemplary embodiment of the present specification can be improved can be obtained.

The second channel region 131a of the second active layer 131 may be disposed to overlap the second gate electrode 134. In addition, the second source region 131b and the second drain region 131c of the second active layer 131 may be disposed on both sides of the second channel region 131a. In addition, the second gate insulating layer 115 may be disposed between the second gate electrode 134 and the second active layer 131. In addition, the second gate insulating layer 115 may be disposed to overlap the second channel region 131a of the second gate electrode 134 and the second active layer 131.

As the insulating material layer and the metal material layer are etched using the photoresist pattern PR as a mask, the second gate insulating layer 115 and the second gate electrode 134 may be formed in the same pattern. The second gate insulating layer 115 may be disposed on the second active layer 131. The second gate insulating layer 115 may be formed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or multiple layers thereof. The second gate insulating layer 115 may be patterned to overlap the second channel region 131a of the second active layer 131. The second gate electrode 134 may be disposed on the second gate insulating layer 114. The second gate electrode 134 is formed of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd). It may be formed of a single layer or multiple layers of one or alloys thereof. The second gate electrode 134 may be patterned to overlap the second active layer 131 and the second gate insulating layer 115. The second gate electrode 134 may be patterned to overlap the second channel region 131a of the second active layer 131. Also, the second gate insulating layer 115 may be patterned to overlap the second channel region 131a of the second active layer 131. Therefore, the second gate electrode 134 and the second gate insulating layer 115 may overlap the second channel region 131a of the second active layer 131. The second interlayer insulating layer 116 may be disposed on the second buffer layer 114, the second active layer 131, and the second gate electrode 134. Contact holes for exposing the first active layer 121 of the first thin film transistor 120 and the second active layer 131 of the second thin film transistor 130 may be formed in the second interlayer insulating layer 116. have. For example, a contact hole for exposing the first source region 121b and the first drain region 121c of the first active layer 121 in the first thin film transistor 120 to the second interlayer insulating layer 116. It can be formed. In addition, contact holes for exposing the second source region 131b and the second drain region 131c of the second active layer 131 in the second thin film transistor 130 are formed in the second interlayer insulating layer 116. Can be. The second interlayer insulating layer 116 may be composed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or multiple layers thereof.

On the second interlayer insulating layer 116, the connection electrode 150, the first source electrode 122 and the second drain electrode 123 of the first thin film transistor 120, and the second of the second thin film transistor 130 The source electrode 132 and the second drain electrode 133 may be disposed.

The first source electrode 122 and the first drain electrode 123 of the first thin film transistor 120 include a first gate insulating layer 112, a first interlayer insulating layer 113, a second buffer layer 114, and The first active layer 121 of the first thin film transistor 120 may be connected through a contact hole formed in the second interlayer insulating layer 116. Accordingly, the first source electrode 122 of the first thin film transistor 120 includes a first gate insulating layer 112, a first interlayer insulating layer 113, a second buffer layer 114, and a second interlayer insulating layer ( It may be connected to the first source region 121b of the first active layer 121 through the contact hole formed in 116). In addition, the first drain electrode 123 of the first thin film transistor 120 includes a first gate insulating layer 112, a first interlayer insulating layer 113, a second buffer layer 114, and a second interlayer insulating layer ( The first drain region 121c of the first active layer 121 may be connected through a contact hole formed in 116).

In addition, the connection electrode 150 may be electrically connected to the second drain electrode 133 of the second thin film transistor 130. In addition, the connection electrode 150 may be electrically connected to the second capacitor electrode 142 of the storage capacitor 140 through a contact hole formed in the second buffer layer 114 and the second interlayer insulating layer 116. Accordingly, the connection electrode 150 may serve to electrically connect the second capacitor electrode 142 of the storage capacitor 140 and the second drain electrode 133 of the second thin film transistor 130.

In addition, the second source electrode 132 and the second drain electrode 133 of the second thin film transistor 130 may be connected to the second active layer 131 through a contact hole formed in the second interlayer insulating layer 116. have. Therefore, the second source electrode 132 of the second thin film transistor 130 may be connected to the second source region 131b of the second active layer 131 through a contact hole formed in the second interlayer insulating layer 116. The second drain electrode 133 of the second thin film transistor 130 may be connected to the second drain region 131c of the second active layer 131 through a contact hole formed in the second interlayer insulating layer 116. have.

The connection electrode 150, the first source electrode 122 and the second drain electrode 123 of the first thin film transistor 120, and the second source electrode 132 and the second drain of the second thin film transistor 130 The electrode 133 can be formed by the same process. Then, the connection electrode 140, the first source electrode 122 and the second drain electrode 123 of the first thin film transistor 120, and the second source electrode 132 and the second of the second thin film transistor 130 The 2 drain electrodes 133 may be formed of the same material. The connection electrode 140, the first source electrode 122 and the first drain electrode 123 of the first thin film transistor 120, and the second source electrode 132 and the second drain of the second thin film transistor 130 The electrode 133 is one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd), or a combination thereof. It may be formed of a single layer or multiple layers made of an alloy. For example, the connection electrode 140, the first source electrode 122 and the first drain electrode 123 of the first thin film transistor 120, and the second source electrode 132 of the second thin film transistor 130 And the second drain electrode 133 may be formed of a three-layer structure of titanium (Ti)/aluminum (Al)/titanium (Ti) made of a conductive metal material, but is not limited thereto.

The connection electrode 150 may be formed integrally with the second drain electrode 133 of the second thin film transistor 130.

The first protective layer 117 includes a connection electrode 140, a first source electrode 122 and a second drain electrode 123 of the first thin film transistor 120, and a second source electrode of the second thin film transistor 130. 132 and the second drain electrode 133 and the second interlayer insulating layer 116. As illustrated in FIG. 1, a contact hole for exposing the second drain electrode 133 may be formed on the first passivation layer 117, but is not limited thereto. For example, a contact hole for exposing the second source electrode 132 of the second thin film transistor 130 may be formed in the first protective layer 117. Alternatively, a contact hole for exposing the connection electrode 150 electrically connected to the second drain electrode 133 of the second thin film transistor 130 may be formed in the first protective layer 117. The first protective layer 117 may be an organic material layer for planarizing the upper portions of the first thin film transistor 120 and the second thin film transistor 130. For example, the planarization layer 118 is an organic material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc. It can be formed of. However, the present invention is not limited thereto, and the first protective layer 117 may be an inorganic material layer for protecting the first thin film transistor 120 and the second thin film transistor 130. For example, it may be formed of an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx). The first protective layer 117 may be composed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or multiple layers thereof.

The auxiliary electrode 160 may be disposed on the first protective layer 117. Also, the auxiliary electrode 160 may be connected to the second drain electrode 133 of the second thin film transistor 130 through the contact hole of the first protective layer 117. The auxiliary electrode 160 may serve to electrically connect the second thin film transistor 130 and the light emitting device 210. For example, the auxiliary electrode 160 may serve to electrically connect the second drain electrode 133 of the second thin film transistor 130 and the first electrode 211 of the light emitting device 210. The auxiliary electrode 160 is one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd), or It may be formed of a single layer or multiple layers of these alloys. The auxiliary electrode 160 may be formed of the same material as the second source electrode 132 and the second drain electrode 133 of the second thin film transistor 130.

The second protective layer 118 may be disposed on the auxiliary electrode 160 and the first protective layer 117. In addition, as illustrated in FIG. 1, a contact hole for exposing the auxiliary electrode 160 may be formed in the second protective layer 118. The second protective layer 118 may be an organic material layer for planarizing the upper portions of the first thin film transistor 120 and the second thin film transistor 130. For example, the second protective layer 118 may include acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin. It can be formed of an organic material.

The light emitting device 210 may be disposed on the second protective layer 118. The light emitting device 210 may include a first electrode 211, a light emitting structure 212, and a second electrode 213. The first electrode 211 of the light emitting device 210 may be disposed on the second protective layer 118. The first electrode 211 may be electrically connected to the auxiliary electrode 160 through a contact hole formed in the second protective layer 118. Accordingly, the first electrode 211 of the light emitting device 210 may be electrically connected to the second thin film transistor 130 by being connected to the auxiliary electrode 160 through a contact hole formed in the second protective layer 118. .

The first electrode 211 may be formed of a multi-layer structure including a transparent conductive film and an opaque conductive film having high reflection efficiency. The transparent conductive film may be formed of a material having a relatively large work function value, such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO). In addition, the opaque conductive film may be formed of a single layer or a multi-layer structure including Al, Ag, Cu, Pb, Mo, Ti or alloys thereof. For example, the first electrode electrode 211 may be formed in a structure in which a transparent conductive film, an opaque conductive film, and a transparent conductive film are sequentially stacked. However, the present invention is not limited thereto, and a transparent conductive film and an opaque conductive film may also be formed in a stacked structure.

Since the display device 100 according to the exemplary embodiment of the present specification is a top emission display device, the first electrode 211 may be an anode electrode. When the display device 100 is a bottom emission, the first electrode 211 disposed on the second protective layer 118 may be a cathode electrode.

The bank 180 may be disposed on the first electrode 211 and the second protective layer 118. An opening for exposing the first electrode 211 may be formed in the bank 180. The bank 180 may define a light emitting region of the display device 100, and may also be referred to as a pixel defining layer. A spacer 190 may be further disposed on the bank 180.

A light emitting structure 212 including a light emitting layer may be disposed on the first electrode 211.

The light emitting structure 212 of the light emitting device 210 may be formed on the first electrode 211 by being stacked in the order of a hole layer, a light emitting layer, and an electron layer. In addition, the light emitting structure 212 may include first and second light emitting structures facing each other with a charge generating layer interposed therebetween. In this case, one light emitting layer of the first and second light emitting structures generates blue light, and the other light emitting layer of the first and second light emitting structures generates yellow-green light, thereby allowing white light through the first and second light emitting structures. This can be generated. The white light generated by the light emitting structure 212 may be incident on a color filter positioned on the light emitting structure 212 to implement a color image. In addition, a color image may be implemented by generating color light corresponding to each sub-pixel in each light emitting structure 212 without a separate color filter. For example, the light emitting structure 212 of the red (R) sub pixel has red light, the light emitting structure 212 of the green (G) sub pixel has green light, and the light emitting structure 212 of the blue (B) sub pixel has blue light. You can also create

The second electrode 213 may be further disposed on the light emitting structure 212. The second electrode 213 of the light emitting device 210 may be disposed on the light emitting structure 212 to face the first electrode 211 with the light emitting structure 212 therebetween. In the display device 100 according to the exemplary embodiment of the present specification, the second electrode 213 may be a cathode electrode. On the second electrode 213, an encapsulation portion 220 that suppresses water infiltration may be further disposed.

The encapsulation unit 220 may include a first inorganic encapsulation layer 221, a second organic encapsulation layer 222, and a third inorganic encapsulation layer 223. The first inorganic encapsulation layer 221 of the encapsulation unit 220 may be disposed on the second electrode 213. In addition, the second organic encapsulation layer 222 may be disposed on the first inorganic encapsulation layer 221. Also, the third inorganic encapsulation layer 223 may be disposed on the second organic encapsulation layer 222. The first inorganic encapsulation layer 221 and the third inorganic encapsulation layer 223 of the encapsulation unit 220 may be formed of an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx). The second organic encapsulation layer 222 of the encapsulation unit 220 is an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, and a polyimide resin resin).

The touch sensor unit 320 may be disposed on the third inorganic encapsulation layer 223 of the encapsulation unit 220. The touch sensor unit 320 may include a touch electrode 323 and a connection unit 322.

The connection portion 322 of the touch sensor unit 320 may be disposed on the third inorganic encapsulation layer 223. For example, a first connection portion of the connection portion 322 may be disposed on the third inorganic encapsulation layer 223. The first connection portion 322a is any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd) Or it may be formed of a single layer or multiple layers of these alloys. However, it is not limited thereto, and may be formed of a transparent conductive film such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO). The lower surface of the first connection portion 322a of the connection portion 322 may directly contact the upper surface of the encapsulation portion 220. For example, the lower surface of the first connection portion 322a may directly contact the third inorganic encapsulation layer 223 of the encapsulation portion 220.

The first touch insulation layer 311a of the touch insulation layer 311 may be disposed on the encapsulation unit 220 and the first connection unit 322a. For example, the first touch insulating layer 311a may be disposed on the third inorganic encapsulation layer 223 of the first connection portion 322a and the encapsulation portion 220. In addition, the first touch insulating layer 311a may be formed of an inorganic material layer or an organic material layer. When the first touch insulating layer 311a is an inorganic material layer, the first touch insulating layer 311a may be composed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or multiple layers thereof. In addition, when the first touch insulating layer 311a is an organic material layer, an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin ( polyimide resin). A contact hole for exposing the first connection portion 322a may be formed in the first touch insulating layer 311a.

The first touch electrode 323a and the second touch electrode 323b of the touch electrode 323 may be disposed on the first touch insulating layer 311a. In addition, referring to FIG. 3, the second connection part 322b may also be disposed on the first touch insulating layer 311a. In addition, the second connection unit 322b may connect the plurality of second touch electrodes 323b to each other. The second connection part 322b may be disposed on the same layer as the first touch electrode 323a and the second touch electrode 323b.

The first touch electrode 323a may be connected to the first connection unit 322a through the contact hole of the first touch insulating layer 311a. The plurality of first touch electrodes 323a may be connected to each other by the first connection portion 322a.

The first touch electrode 323a and the second touch electrode 323b of the touch electrode 323 may be formed of a transparent conductive film such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO). However, the present invention is not limited thereto, and the first touch electrode 323a and the second touch electrode 323b may be formed of an opaque conductive film having an opening. When the first touch electrode 323a and the second touch electrode 323b are made of an opaque conductive film having an opening, molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), and chromium (Cr) ), gold (Au), nickel (Ni), and neodymium (Nd) may be formed of a single layer or multiple layers of any one or alloys thereof.

The second touch insulating layer 311b of the touch insulating layer 311 may be disposed on the first touch electrode 323a, the second touch electrode 323b, and the first touch insulating layer 311a. The second touch insulating layer 311b may be formed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or multiple layers thereof.

The display device 100 according to the exemplary embodiment of the specification may simplify the process by arranging the touch sensor unit 320 on the encapsulation unit 220. In addition, the thickness of the display device 100 can be reduced.

5 is a cross-sectional view illustrating a display device according to another exemplary embodiment of the present specification. Compared to FIG. 4, the difference will be mainly described, and duplicate description will be omitted or briefly described. For example, the substrate 110, the first buffer layer 111, the first gate insulating layer 112, the first interlayer insulating layer 113, the second buffer layer 114, the second gate insulating layer 115, Second interlayer insulating layer 116, first protective layer 117, second protective layer 118, first thin film transistor 120, second thin film transistor 130, storage capacitor 140, connecting electrode ( 150), the auxiliary electrode 160, the bank 180, the spacer 190, and the light emitting element 210 are substantially the same. Accordingly, a duplicate description of the configuration of FIG. 5 that is substantially the same as FIG. 4 is omitted or briefly described.

Referring to FIG. 5, the display device 100 according to another exemplary embodiment of the present specification includes a substrate 110, a first buffer layer 111, a first gate insulating layer 112, a first interlayer insulating layer 113, Second buffer layer 114, second gate insulating layer 115, second interlayer insulating layer 116, first protective layer 117, second protective layer 118, first thin film transistor 120, first 2 thin film transistor 130, storage capacitor 140, connection electrode 150, auxiliary electrode 160, bank 180, spacer 190, light emitting device 210, encapsulation unit 220, touch insulation layer 311, and a touch sensor unit 320. In addition, the first active layer 121 of the first thin film transistor 120 may be made of a low temperature polysilicon material, and the second active layer 131 of the second thin film transistor 130 may be made of an oxide semiconductor.

The first thin film transistor 120 and the second thin film transistor 130 may be disposed on the substrate 110. In addition, the light emitting device 210 may be disposed on the first thin film transistor 120 and the second thin film transistor 130.

The encapsulation unit 220 may be disposed on the light emitting device 210. For example, the encapsulation unit 220 may be disposed on the second electrode 213 of the light emitting device 210. Referring to FIG. 5, the encapsulation unit 220 may include a first inorganic encapsulation layer 221, a second organic encapsulation layer 222, and a third inorganic encapsulation layer 223. The first inorganic encapsulation layer 221 of the encapsulation unit 220 may be disposed on the second electrode 213 of the light emitting device 210. In addition, the second organic encapsulation layer 222 may be disposed on the first inorganic encapsulation layer 221.

The first connection portion 322a of the touch sensor unit 320 may be disposed on the second organic encapsulation layer 222 of the encapsulation unit 220. In addition, the third inorganic encapsulation layer 223 of the encapsulation unit 220 may be disposed on the first connection unit 322a of the touch sensor unit 320. A contact hole for exposing the first connection portion 322a of the touch sensor unit 320 may be formed in the third inorganic encapsulation layer 223. For example, the first connection portion 322a of the touch sensor unit 320 may be disposed between the second organic encapsulation layer 222 and the third inorganic encapsulation layer 223. In addition, the first connection portion 322a may be exposed by a contact hole of the third inorganic encapsulation layer 223. For example, the lower surface of the first connection portion 322a may directly contact the upper surface of the second organic encapsulation layer 222, and the upper surface of the first connection portion 322a may be the third inorganic encapsulation layer 223 It can directly contact the lower surface of the. In addition, the upper surface of the first connection portion 322a may be exposed by the contact hole of the third inorganic encapsulation layer 223.

The touch electrode 323 of the touch sensor unit 320 may be disposed on the third inorganic encapsulation layer 223. The touch electrode 323 may include a first touch electrode 323a and a second touch electrode 323b. For example, the first touch electrode 323a and the second touch electrode 323b of the touch electrode 323 may be disposed on the third inorganic encapsulation layer 223. In addition, the first touch electrode 323a may be connected to the first connection part 322a through the contact hole of the third inorganic encapsulation layer 223. In addition, as illustrated in FIG. 3, the plurality of first touch electrodes 323a may be connected to each other through the first connection portion 322a. Also, the second connection part 322b may also be disposed on the same layer on which the first touch electrode 323a and the second touch electrode 323b are disposed. In addition, the second connection unit 322b may connect the plurality of second touch electrodes 323b to each other. For example, as illustrated in FIG. 3, the second connection part 322b may be disposed on the third inorganic encapsulation layer 223 like the first touch electrode 323a and the second touch electrode 323b. . Also, the second connection part 322b disposed on the third inorganic encapsulation layer 223 may be connected to the second touch electrode 323b. The plurality of second touch electrodes 323b may be connected to each other through the second connection part 322b.

A touch insulating layer 311 may be formed on the first touch electrodes 323a and the second touch electrodes 323b of the third inorganic encapsulation layer 223 and the touch sensor unit 320. The touch insulating layer 311 may be an inorganic material layer for protecting the touch sensor unit 320. For example, it may be formed of an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx). The touch insulating layer 311 may be formed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or multiple layers thereof. The touch insulating layer 311 may directly contact the third inorganic encapsulation layer 223. For example, as illustrated in FIG. 5, the lower surface of the touch insulating layer 311 may directly contact the upper surface of the third inorganic encapsulation layer 223.

The second organic encapsulation layer 222 and the third inorganic encapsulation layer 223 of the encapsulation unit 220 of the first connection unit 322a of the touch sensor unit 320 in the display device 100 according to the exemplary embodiment of the present specification Interposed therebetween, the thickness of the touch insulating layer 311 can be reduced. And, since the manufacturing process step can be reduced, there is an effect that can also reduce the production cost. Since the third inorganic encapsulation layer 223 of the encapsulation unit 220 is used as the touch insulation layer 311, the overall thickness of the touch insulation layer 311 can be reduced, so that the display device 100 can be manufactured thinner. have. And, by simplifying the process of forming the touch insulating layer 311, it is possible to reduce the production cost.

The display device according to the exemplary embodiment of the present specification may be described as follows.

A display device according to an exemplary embodiment of the present specification includes a substrate, a thin film transistor on a substrate, a light emitting element on the thin film transistor, a sealing portion on the light emitting element, and a first connection portion of the touch sensor portion on the sealing portion, the first A first touch insulating layer disposed on the connection unit and including a contact hole exposing the first connection unit, a plurality of first touch electrodes and a plurality of second touch electrodes, and a plurality of touch sensor units on the first touch insulation layer A first touch electrode and a second touch insulating layer on the plurality of second touch electrodes may be included, and the plurality of first touch electrodes may be connected to the first connection unit through contact holes of the first touch insulating layer.

According to the exemplary embodiment of the present specification, the lower surface of the first connection portion may directly contact the upper surface of the encapsulation portion.

According to the exemplary embodiment of the present specification, the encapsulation unit includes a first inorganic encapsulation layer, a third inorganic encapsulation layer on the first inorganic encapsulation layer, and a second organic encapsulation layer between the first inorganic encapsulation layer and the third inorganic encapsulation layer. Including, the lower surface of the first connection portion may directly contact the third inorganic encapsulation layer of the encapsulation portion.

According to the exemplary embodiment of the present specification, the second connection unit is disposed on the first touch insulating layer and connected to the plurality of second touch electrodes.

According to the exemplary embodiment of the present specification, the plurality of first touch electrodes are connected to each other in the first direction by the first connection unit, and the plurality of second touch electrodes are in the second direction perpendicular to the first direction by the second connection unit. Can be connected to each other.

According to the exemplary embodiment of the present specification, the first connection portion and the second connection portion may intersect each other with the first touch insulating layer interposed therebetween. The display device according to the exemplary embodiment of the present specification includes a substrate, a thin film transistor on a substrate, a light emitting element on the thin film transistor, a first inorganic encapsulation layer on the light emitting element, and a third inorganic on the first inorganic encapsulation layer. On the first connection, the third inorganic encapsulation layer, the second organic encapsulation layer between the encapsulation layer, the first inorganic encapsulation layer and the third inorganic encapsulation layer, the touch sensor portion between the second organic encapsulation layer and the third inorganic encapsulation layer The touch sensor unit may include a plurality of first touch electrodes and a plurality of second touch electrodes, and a touch insulating layer on the plurality of first touch electrodes and the plurality of second touch electrodes.

According to the exemplary embodiment of the present specification, the third inorganic encapsulation layer may include a contact hole exposing the first connection portion of the touch sensor unit.

According to the exemplary embodiment of the present specification, the plurality of first touch electrodes of the touch sensor unit may be connected to the first connection unit through the contact hole of the third inorganic encapsulation layer.

According to the exemplary embodiment of the present specification, the plurality of first touch electrodes may be connected in the first direction by the first connection unit.

According to the exemplary embodiment of the present specification, the second connection unit is disposed on the third inorganic encapsulation layer and connected to the plurality of second touch electrodes.

According to the exemplary embodiment of the present specification, the plurality of second touch electrodes may be connected to each other in a second direction perpendicular to the first direction by the second connection unit.

According to the exemplary embodiment of the present specification, the first connection portion and the second connection portion may intersect each other with the third inorganic encapsulation layer therebetween.

According to the exemplary embodiment of the present specification, the lower surface of the touch insulating layer may directly contact the upper surface of the third inorganic encapsulation layer.

The above description and the accompanying drawings are merely illustrative of the technical spirit of the present invention, and those of ordinary skill in the art to which the present invention pertains combine combinations of configurations in a range not departing from the essential characteristics of the present invention. , Various modifications and variations such as separation, substitution and change will be possible. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all technical spirits within the equivalent range should be interpreted as being included in the scope of the present invention.

100: display device
110: substrate
120: first thin film transistor
130: second thin film transistor
140: storage capacitor
210: light emitting element
220: encapsulation
221: first inorganic encapsulation layer
222: second organic sealing layer
223: third weapon encapsulation layer
320: touch sensor unit
322a: first connection
322b: second connection
311: touch insulation layer
311a: first touch insulating layer
311b: second touch insulating layer
323: touch electrode
323a: first touch electrode
323b: second touch electrode

Claims (14)

Board;
A thin film transistor on the substrate;
A light emitting element on the thin film transistor;
An encapsulation portion on the light emitting element;
A first connection unit of the touch sensor unit on the encapsulation unit;
A first touch insulating layer disposed on the first connection portion and including a contact hole exposing the first connection portion,
A plurality of first touch electrodes and a plurality of second touch electrodes of the touch sensor unit on the first touch insulating layer; And
And a second touch insulation layer on the plurality of first touch electrodes and the plurality of second touch electrodes, wherein the plurality of first touch electrodes are formed through the contact hole of the first touch insulation layer. A display device that is connected to the connection portion.
According to claim 1,
The lower surface of the first connection portion, the display device in direct contact with the upper surface of the sealing portion.
According to claim 2,
The encapsulation portion includes a first inorganic encapsulation layer, a third inorganic encapsulation layer on the first inorganic encapsulation layer, and a second organic encapsulation layer between the first inorganic encapsulation layer and the third inorganic encapsulation layer,
The lower surface of the first connection portion, the display device in direct contact with the third inorganic encapsulation layer of the encapsulation.
According to claim 1,
A display device disposed on the first touch insulating layer and including a second connection portion connected to the plurality of second touch electrodes.
The method of claim 4,
The plurality of first touch electrodes are connected to each other in a first direction by the first connection unit,
The plurality of second touch electrodes are connected to each other in a second direction perpendicular to the first direction by the second connection unit.
The method of claim 4,
The first connecting portion and the second connecting portion intersect each other with the first touch insulating layer interposed therebetween.
Board;
A thin film transistor on the substrate;
A light emitting element on the thin film transistor;
A first inorganic encapsulation layer on the light emitting device, a third inorganic encapsulation layer on the first inorganic encapsulation layer, a second organic encapsulation layer between the first inorganic encapsulation layer and the third inorganic encapsulation layer;
A first connection unit of a touch sensor unit between the second organic encapsulation layer and the third inorganic encapsulation layer;
A plurality of first touch electrodes and a plurality of second touch electrodes of the touch sensor unit on the third inorganic encapsulation layer; And
And a touch insulating layer on the plurality of first touch electrodes and the plurality of second touch electrodes.
The method of claim 7,
The third inorganic encapsulation layer includes a contact hole exposing the first connection portion of the touch sensor unit.
The method of claim 8,
The plurality of first touch electrodes of the touch sensor unit are connected to the first connection unit through the contact hole of the third inorganic encapsulation layer.
The method of claim 9,
The plurality of first touch electrodes are connected to the first direction by the first connection unit, a display device.
The method of claim 10,
A display device disposed on the third inorganic encapsulation layer and including a second connection portion connected to the plurality of second touch electrodes.
The method of claim 11,
The plurality of second touch electrodes are connected to each other in a second direction perpendicular to the first direction by the second connection unit.
The method of claim 11,
The first connecting portion and the second connecting portion intersect each other with the third inorganic encapsulation layer therebetween.
The method of claim 7,
The lower surface of the touch insulating layer is in direct contact with the upper surface of the third inorganic encapsulation layer, a display device.

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