KR20190081982A - Epoxy resin varnish composition and film using the same for encapsulating semicomductor device - Google Patents

Abstract

The present invention relates to a varnish composition for encapsulating a semiconductor element, which comprises: an epoxy resin; a curing agent; an inorganic filler; and a solvent and satisfies formula 1, 6 <= TI = viscosity at 0.6 rpm/viscosity at 6.0 rpm <= 9, to a film for encapsulating a semiconductor element produced using the same, and to a semiconductor device encapsulated using the same. The film for encapsulating a semiconductor element exhibits excellent performance when applied for encapsulating a semiconductor element due to excellent dispersibility of the inorganic filler.

Description

TECHNICAL FIELD [0001] The present invention relates to an epoxy resin varnish composition for sealing a semiconductor device, and a film for sealing a semiconductor device manufactured using the same. BACKGROUND OF THE INVENTION &lt; RTI ID = 0.0 &gt;

TECHNICAL FIELD The present invention relates to an epoxy resin varnish composition for sealing semiconductor devices and a film for sealing semiconductor devices manufactured using the same. More particularly, the present invention relates to a varnish composition for use in an epoxy resin film for semiconductor device sealing, which can improve warpage and cracking when a large area panel substrate is applied, and a semiconductor device sealing film produced using the varnish composition .

The composition for sealing a semiconductor wafer is produced in the form of a liquid or a granule. However, such a composition has a problem in that it is difficult to apply such a composition to a large area semiconductor panel because of defects such as warpage, breakage and thickness uniformity. Accordingly, there is a need to develop a new composition for encapsulating semiconductor devices that does not cause the above problems when applied to large area semiconductor panels.

 The film-like sealing composition has been developed as a material favorable for sealing a panel having a large area, which is larger than a wafer, because it can ensure a uniformity of thickness over a large area and can be easily handled. In order to improve the warpage and cracking that may occur when applying a large size panel substrate to a film-type sealing composition, rigidity-imparting performance is required and a film structure including a glass cloth is proposed to impart rigidity to the film.

It is an object of the present invention to provide an epoxy resin film for sealing a semiconductor device and a varnish composition applied thereto, which can improve warpage and cracking.

Another object of the present invention is to provide a method for producing an epoxy resin film for semiconductor device encapsulation which can maintain the dispersibility of an inorganic filler and control the thickness easily.

It is another object of the present invention to provide a semiconductor device which is sealed with the above-mentioned epoxy resin film.

One aspect of the present invention is an epoxy resin composition comprising: an epoxy resin; Curing agent; Inorganic fillers; And a solvent, and satisfies the following formula (1).

[Formula 1]

6? TI = viscosity at 0.6 rpm / viscosity at 6.0 rpm? 9

In the above formula (1), the thixotropic index (TI) is a value calculated by substituting the viscosity measured at a rotation speed (rpm) with a spindle 51 using a rotational viscometer at 25 ° C.

The present invention provides a film for sealing a semiconductor element manufactured using the varnish composition for producing a film for sealing a semiconductor device according to the present invention.

The present invention provides a sealed semiconductor device that is sealed using the film for sealing a semiconductor device according to the present invention.

The present invention can provide a varnish composition capable of producing an epoxy resin film for semiconductor device sealing that can improve the warping and cracking phenomenon, and the film produced by coating the varnish composition of the present invention on glass cloth has rigidity , The dispersibility of the inorganic filler is excellent, the thickness of the film is controlled, and it can exhibit excellent performance when applied to semiconductor device sealing.

1 shows an example of a process for preparing a film by coating and impregnating a glass cloth with a varnish composition.
Fig. 2 shows SEM sectional analysis results of a film prepared by applying a varnish composition using silica having different average particle diameters.

In the composition for sealing a film-type semiconductor device, a rigidity-imparting performance is required to improve warpage and cracking that may occur when a large-size panel (large-size panel) substrate is applied. In the present invention, This problem has been solved by producing a film containing a glass cloth to give.

In the impregnation process with the existing glass cloth, the impregnation using the impregnation tank generally used is difficult to ensure the dispersibility of the filler when the impregnation solution containing the filler is dispersed and the thickness of the impregnated layer is easily controlled In the present invention, a glass cloth impregnation process using a coating and laminating process is applied to prepare a film by impregnating a coating solution (varnish composition) in which a filler is dispersed through a coating to maintain the dispersibility of the filler , And a thickness-controlled coating is made possible through a die coater or the like.

The inventors of the present invention have found that it is possible to produce a film for sealing a semiconductor device having excellent physical properties by controlling the thixotropic index of the epoxy resin varnish composition applied when producing the film, Thus completing the present invention.

The varnish composition for producing a film for sealing a semiconductor device according to the present invention comprises an epoxy resin, a curing agent, an inorganic filler and a solvent, and can satisfy the following formula (1).

[Formula 1]

6? TI = viscosity at 0.6 rpm / viscosity at 6.0 rpm? 9

In the above formula (1), the thixotropic index (TI) is a value calculated by substituting the viscosity measured at a rotation speed (rpm) with a spindle 51 using a rotational viscometer at 25 ° C.

The semiconductor element sealing film may include a glass cloth. By including the glass cloth, the rigidity of the film can be imparted, and warping and cracking can be improved.

Specifically, the TI may be 6.3 or more, 6.5 or more, 6.7 or more, or 7 or more.

Within this range, the varnish composition maintains its morphology, and flowability increases better when shear stress is applied, ensuring the dispersibility of the inorganic filler during film formation by glass-class impregnation and flowing well into the glass- The reliability of the introduced film can be secured.

The thixotropic property is characterized in that when the shear stress is applied to the inorganic filler system, the network structure is broken and the flowability is increased. In order to improve the pore filling of the glass cloth, the flowability of the varnish composition is increased The thixotropy characteristic of the varnish becomes an important factor. Thixotropic properties are obtained as the ratio of the viscosity measured at Shear rate, which is 10 times different.

&Lt; Epoxy resin varnish composition >

Hereinafter, the constituent components of the epoxy resin varnish composition for producing a film for sealing a semiconductor device according to the present invention will be described in detail.

Binder resin

The kind of the binder resin used in the present invention is not particularly limited, and a binder resin which is generally used in the technical field of the present invention can be used. Non-limiting examples of the binder resin include polyimide resin, polystyrene resin, polyethylene resin, polyester resin, polyamide resin, butadiene rubber, acrylic rubber, (meth) acrylate resin, urethane resin, polyphenylene ether resin, poly Ether imide resins, phenoxy resins, polycarbonate resins, polyphenylene ether resins, and modified polyphenylene ether resins. These may be used alone or in combination of two or more.

The binder resin may preferably have a glass transition temperature (Tg) of -30 ° C to 80 ° C, more preferably 5 ° C to 60 ° C, and more preferably 5 ° C to 35 ° C. When the film is cured within the above-mentioned range, it exhibits high fluidity, and the void squeezing ability can be sufficiently exerted, whereby excellent adhesion and reliability such as warpage can be obtained.

The binder resin may be contained in an amount of preferably 1 to 30 parts by weight, more preferably 2 to 20 parts by weight, based on the total weight of the semiconductor encapsulating film. It is possible to secure excellent void filling property, void squeezing capability, and excellent reliability such as warpage within the above range.

Epoxy resin

As the epoxy resin, epoxy resins generally used for sealing semiconductor devices can be used and are not particularly limited. Specifically, as the epoxy resin, an epoxy compound containing two or more epoxy groups in the molecule can be used. For example, the epoxy resin is an epoxy resin obtained by epoxidating a condensate of phenol or alkyl phenol and hydroxybenzaldehyde, a phenol aralkyl type epoxy resin, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a multifunctional epoxy Resin, naphthol novolak type epoxy resin, novolak type epoxy resin of bisphenol A / bisphenol F / bisphenol AD, glycidyl ether of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl type epoxy resin, dicyclopenta Diene-based epoxy resins, and biphenyl-type epoxy resins. More specifically, the epoxy resin may include at least one of a biphenyl type epoxy resin, a phenol aralkyl type epoxy resin, a cresol novolak type epoxy resin, and a multifunctional epoxy resin. Most preferably, the epoxy resin may use at least one of a biphenyl type epoxy resin and a phenol aralkyl type epoxy resin.

Specifically, the biphenyl-type epoxy resin may be represented by the following general formula (2), but is not limited thereto.

(2)

(In the formula (2), R is an alkyl group having 1 to 4 carbon atoms, and the average value of n is 0 to 7.)

Specifically, the phenol aralkyl type epoxy resin can be represented by the following formula (3), but is not limited thereto.

(3)

(In the formula 3, the average value of n is 1 to 7).

The epoxy resin may be used singly or in combination, and may be added in the form of an additive compound prepared by subjecting an epoxy resin to a linear reaction such as a curing agent, a curing accelerator, a releasing agent, a coupling agent, and a stress relieving agent and a melt master batch .

The epoxy resin may be contained in an amount of 0.5 to 40% by weight, specifically 1 to 30% by weight in the epoxy resin varnish composition for sealing a semiconductor device. Within this range, the flowability of the composition may not be deteriorated, and the reliability of the glass cloth impregnated film can be ensured.

Hardener

The hardener Curing agents generally used for sealing semiconductor devices can be used and are not particularly limited. Specifically, the curing agent may be a phenolic curing agent. For example, the phenolic curing agent may be a phenol aralkyl type phenol resin, a phenol novolak type phenol resin, a multifunctional type phenol resin, a xylok type phenol resin, Naphthol type phenol resin, terpene type phenol resin, dicyclopentadiene type phenol resin, novolac type phenol resin synthesized from bisphenol A and resole, tris (hydroxyphenyl) methane, dihydroxybiphenyl &Lt; / RTI &gt; polyhydric phenol compounds. Preferably, the phenolic curing agent is at least one of a phenol aralkyl type phenol resin, a phenol novolac type phenol resin, and a polyfunctional phenol resin, most preferably a phenol aralkyl type phenol resin, a phenol novolak type phenol resin, Can be used.

Specifically, the phenol aralkyl type phenol resin can be represented by the following general formula (4), but is not limited thereto.

&Lt; Formula 4 >

(The average value of n in Formula 4 is 1 to 7)

Specifically, the multifunctional phenol resin may be represented by the following formula (5), but is not limited thereto.

&Lt; Formula 5 >

(The average value of n in Formula 5 is 1 to 7)

The curing agent may be used alone or in combination. Further, it can be used as an additional compound prepared by subjecting the above-mentioned curing agent to a linear reaction such as an epoxy resin, a curing accelerator, a releasing agent, a stress relieving agent and the like, and a melt master batch.

The curing agent may be contained in the epoxy resin varnish composition for encapsulating semiconductor devices in an amount of 0.1 to 40% by weight, preferably 1 to 30% by weight. In the above range, the flowability of the composition can be prevented from being lowered, and the reliability of the glass cloth impregnated film can be ensured.

The blending ratio of the epoxy resin and the curing agent can be adjusted according to the requirements of mechanical properties and moisture resistance reliability in the package. For example, the chemical equivalent ratio of the epoxy resin to the curing agent may be from 0.95 to 3, and may be specifically from 1 to 2, more specifically from 1 to 1.75. When the compounding ratio of the epoxy resin and the curing agent is within the above range, excellent strength can be realized after curing of the epoxy resin composition.

Inorganic filler

The inorganic filler is intended to improve the mechanical properties and low stress of the epoxy resin composition. As the inorganic filler, general inorganic fillers used for the semiconductor encapsulant can be used without limitation and are not particularly limited. Examples of the inorganic filler include fused silica, crystalline silicate, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fiber and the like . These may be used alone or in combination. Preferably, a mixture of at least one of fused silica and crystalline silicate may be used as an inorganic filler to secure the dielectric constant and thermal conductivity.

The fused silica can provide a low stressing effect. The fused silica refers to amorphous silica having a true specific gravity of 2.3 or less and includes amorphous silica obtained by melting crystalline silica or synthesized from various raw materials.

The average particle size of the particles of the inorganic filler may be in the range of 0.5 to 8 탆, more specifically in the range of 1 to 6 탆, more specifically in the range of 1 to 5 탆.

The average particle size of the particles of the inorganic filler is the size of the point at which the size distribution of the particles is 50%. The particle size distribution is measured from a particle analyzer such as PSA.

And in the case of silica, fused silica having an average particle diameter of 0.5 to 8 탆. The silica form may be spherical, flake form or the like, of which spherical forms may be preferably used. The content of silica may be in the range of 0.1 to 90% by weight, specifically 0.1 to 50% by weight, of the total inorganic filler.

Inorganic fillers such as alumina, barium titanate and the like for imparting dielectric properties and thermal conductivity in addition to silica also fall within the scope of the present invention.

In the above range, the dispersibility of the inorganic filler can be ensured in the glass cloth impregnation process using the coating process, the flowability on the glass cloth pores of the varnish composition can be controlled, voids can be removed and the impregnability can be improved, The reliability of the film can be secured.

The amount of the inorganic filler to be used varies depending on required properties such as moldability, low stress, and high temperature strength. In embodiments, the inorganic filler may comprise from 0.1 wt% to 90 wt%, such as from 10 wt% to 60 wt%, of the epoxy resin varnish composition for encapsulating semiconductor devices. Within this range, the flowability of the composition is ensured, the dispersibility of the inorganic filler in the glass cloth impregnation process using the coating process can be ensured, the flowability on the glass cloth pores of the varnish composition can be controlled, Can be improved, and the reliability of the produced film can be secured.

menstruum

The epoxy resin composition according to the present invention may be a conventional solvent used in the art. For example, MEK, EA, Toluene, Cyclohexanone, and the like

The solvent may be contained in an amount of 0.1 to 60% by weight, specifically 10 to 50% by weight in the epoxy resin composition for encapsulating semiconductor devices. Within this range, the flowability of the composition may not be deteriorated, and the reliability of the glass cloth impregnated film can be ensured.

In addition to the above components, the varnish composition for producing a film for sealing a semiconductor device according to the present invention may further comprise at least one of a curing accelerator, a coupling agent and a coloring agent.

Hardening accelerator

The curing accelerator is a substance that promotes the reaction between the epoxy resin and the curing agent. As the curing accelerator, for example, a tertiary amine, an organometallic compound, an organic phosphorus compound, an imidazole, and a boron compound can be used.

Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris ) Phenol and tri-2-ethylhexyl acid salt. Specific examples of the organometallic compound include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. Organic phosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphine Pin-1,4-benzoquinone adducts and the like. Imidazoles include 2-phenyl-4-methylimidazole, 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2- 4-methylimidazole, 2-heptadecylimidazole, and the like, but are not limited thereto. Specific examples of the boron compound include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroboron monoethylamine, tetrafluoro Borane triethylamine, tetrafluoroborane amine, and the like. In addition, 1,5-diazabicyclo [4.3.0] non-5-ene (1,5-diazabicyclo [4.3.0] non-5-ene: DBN), 1,8-diazabicyclo [5.4. Diazabicyclo [5.4.0] undec-7-ene: DBU) and phenol novolac resin salt. However, the present invention is not limited thereto.

As the curing accelerator, it is also possible to use an epoxy resin or a curing agent and an additive prepared by lathe.

The curing accelerator may be contained in an amount of 0.01 to 3% by weight, specifically 0.02 to 1.5% by weight in the varnish composition for producing a film for sealing a semiconductor device. It may be advantageous that the curing of the composition is accelerated within the above-mentioned range and the curing degree is also good.

Coupling agent

The coupling agent is for improving the interface strength by reacting between the epoxy resin and the inorganic filler, and may be, for example, a silane coupling agent. The silane coupling agent is not particularly limited as long as it reacts between the epoxy resin and the inorganic filler to improve the interface strength between the epoxy resin and the inorganic filler. Specific examples of the silane coupling agent include epoxy silane, aminosilane, ureidosilane, mercaptosilane, and alkylsilane. The coupling agent may be used alone or in combination.

The coupling agent may be contained in the varnish composition for producing a film for sealing a semiconductor device in an amount of 0.01 wt% to 5 wt%, preferably 0.05 wt% to 3 wt%. The strength of the cured product of the epoxy resin composition in the above range can be improved.

Release agent

As the releasing agent, at least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid and natural fatty acid metal salt can be used.

The release agent may be contained in an amount of 0.1 to 2% by weight in the varnish composition for producing a film for sealing a semiconductor device.

coloring agent

The coloring agent is for laser marking of the semiconductor element sealing material, and coloring agents well known in the art can be used and are not particularly limited. For example, the colorant may include one or more of carbon black, titanium black, titanium nitride, dicopper hydroxide phosphate, iron oxide, mica.

The colorant may be contained in the varnish composition for producing a film for sealing a semiconductor element in an amount of 0.01 to 5 wt%, preferably 0.05 to 3 wt%.

In addition, an antioxidant such as Tetrakis [methylene-3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] methane may be added to the varnish composition for producing a film for sealing a semiconductor device according to the present invention. A flame retardant such as aluminum hydroxide, and the like may be further added as needed.

The epoxy resin varnish composition may be prepared by a method of blending the above components.

A solvent is added to the mixture of the binder and the resin, and the resin component is dissolved while stirring and dispersed with the binder. After the inorganic filler is added and stirred, the inorganic filler is dispersed and then the hardening accelerator and other additives are added and stirred.

The varnish composition prepared above is secondarily dispersed in an inorganic filler through 3-Roll Milling or Bead Milling.

&Lt; Film for sealing semiconductor devices &

The film for sealing an epoxy device of the present invention may contain the above varnish composition and glass cloth.

Glass cloth

The film for sealing a semiconductor device of the present invention may be a glass cloth impregnated with the varnish composition of the present invention.

The thickness of the film for sealing a semiconductor element of the present invention may range from 10 탆 to 120 탆.

The film for sealing a semiconductor device of the present invention comprises 0.5 to 40% by weight of an epoxy resin, 0.1 to 40% by weight of a curing agent; Inorganic fillers; 0.1 to 90% by weight and glass cloth 0.1 to 60% by weight. Specifically, 1 to 30% by weight of an epoxy resin, 1 to 30% by weight of a curing agent; Inorganic fillers; 1 to 50% by weight, and 1 to 40% by weight of glass cloth.

When it is included in the above-mentioned range composition, the rigidity of the film can be secured and the reliability can be excellent.

The method for producing a film for sealing a semiconductor device of the present invention may include a method of coating the glass cloth of the varnish composition of the present invention.

After the base film fabric and the glass cloth fabric are overlapped, the varnish composition is coated and coated on the base film fabric by a method such as Die Coat. The varnish composition is coated on the coated cloth, and the glass cloth is covered with the cloth cloth. Then, the varnish composition is allowed to pass between the coating rolls and the shear stress is applied to the varnish composition. The varnish composition is coated on the upper surface of the glass cloth while passing through the gap of the cloth cloth. Proceed with filling coating process.

The film of the present invention containing glass cloth by the coating and impregnation method using the varnish composition of the present invention has an advantage that thickness control is easy.

The present invention provides a semiconductor device sealed with the film for sealing a semiconductor element. The film for sealing a semiconductor element of the present invention can be usefully applied to large-area semiconductor panels. A large-area panel means a semiconductor panel having a length of 300 mm or more on one side. Specifically, the large-area panel can be applied to a semiconductor panel having an area ranging from 300 mm to 700 mm.

In the case where the sealing film of the present invention is applied in the above-described range (warpage which may occur when a large-size panel substrate is applied and rigidity-imparting performance for improving cracks can be ensured).

As a method of sealing a semiconductor element by using the film for sealing a semiconductor element obtained in the present invention, there is a method such as Lamination or Vacuum Lamination.

Hereinafter, the configuration and operation of the present invention will be described in more detail with reference to preferred embodiments of the present invention. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.

Specific specifications of the components used in the following examples and comparative examples are as follows.

Epoxy resin

1) Biphenyl-type epoxy resin: Product name NC-3000 (Japanese explosive)

2) Bisphenol F type epoxy resin: Product name YL-6810 (Mitsubishi)

Hardener

3) Phenolic resin: Product name MEH-7851SS (Meiwa)

Inorganic filler

Silica (Admatech, product name: SG-6050SQ average particle diameter: 2.2 탆)

Examples and Comparative Examples

Example 1

After dissolving and mixing / stirring 4 parts by weight of each of the above components, 4 parts by weight of binder, 27 parts by weight of epoxy resin, 21 parts by weight of curing agent, 40 parts by weight of inorganic filler (average particle diameter 2.2 μm), a curing accelerator and other additives, A varnish composition was prepared by a method of secondarily dispersing an inorganic filler with Milling.

Comparative Example 1

A varnish composition was prepared in the same manner as in Example 1 except that silica having an average particle diameter of 10 탆 was used.

Comparative Example 2

A varnish composition was prepared in the same manner as in Example 1 except that silica having an average particle diameter of 20 탆 was used.

The varnish compositions of the examples and comparative examples thus prepared are shown in Table 1 below.

Example 1 Comparative Example 1 Comparative Example 2 bookbinder 4 4 4 Epoxy resin 27 27 27 Hardener 21 21 21 Inorganic filler Silica
(Average particle diameter 2.2 mu m) 40 - - Silica
(Average particle diameter 10 mu m) - 40 - Silica
(Average particle diameter 20 mu m) - - 40 Flame retardant 3 3 3 Carbon black 2 2 2 Hardening accelerator One One One Coupling agent 2 2 2

(Unit: wt%)

The properties of the varnish compositions of the examples and comparative examples thus prepared were measured according to the following properties evaluation methods.

How to measure property

Measurement of thixotropic index:

The viscosity was measured at 25 ° C using Spindle 51 with Brookfield HBDV-II + Pro, a rotational viscometer. During the measurement, the sample was completely filled in the sample cup, and the temperature was stabilized for 5 minutes by attaching a spindle, and then the viscosity was measured after 120 sec retention time at each rpm in the following Table 2. Based on the measured viscosity, the TI index of Formula 1 was calculated.

Viscometer RPM Example 1
(Silica average particle diameter 2.2um) Comparative Example 1
(Silica average particle diameter 10um) Comparative Example 2
(Silica average particle diameter 20um) Primary (cps) Primary (cps) Secondary (cps) Primary (cps) Secondary (cps) Secondary (cps) 0.3 9557 10923 10923  9557 10923 8192 0.6 4779 5154 5154 4779 5061 4496 1.5 1911 2365 2251 1911 2185 1638 3.0 955.7 1180 1180 955.7 1092 819.2 6.0 682.7 912.5 912.5 887.5 887.5 614.4 12.0 614.4 821 821 750.9 750.9 580.3 30.0 532.5 736.5 750.9 682.7 655.4 518.8 60.0 471.0 682.7 736.5 587.1 573.4 464.2 TI
(0.6 RPM / 6.0 RPM) 7.0 5.64 5.64 5.38 5.70 7.32 TI average 7.16 5.5 5.64

The properties of the varnish compositions of Examples and Comparative Examples are shown in Table 3.

Example 1 Comparative Example 1 Comparative Example 2 TI (Av) 7.16 5.5 5.64 Void <3% > 10% > 10% CTE 1 40 ppm 45ppm 48ppm Tg 145 128 121 Storage Modulus (25 ° C) 6GPa 4.5 GPa 4.1 GPa Storage Modulus (260 ° C) 200 MPa 50 MPa 80 MPa

Fabrication of Semiconductor Device Sealing Film

Referring to FIG. 1, the varnish composition prepared above was die-coated on a base film PET fabric by a die coater method, and a glass cloth fabric style 1027 was overlaid on the fabric. Then, the varnish composition was subjected to shear stress, The coated varnish composition was passed through the gap of the glass cloth, and the glass cloth pore was impregnated with the varnish composition while the upper surface of the fabric was coated to prepare a film for sealing a semiconductor device.

SEM section analysis results of the produced film are shown in Fig.

In the comparative example in which the thixotropic index is 5.5, the glass cloth impregnation is not performed well, and the void is observed. In the case of the embodiment having the thixotropic index of 7.16, the glass cloth impregnation property is improved and the pore filling property is excellent, .

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (10)

Epoxy resin; Curing agent; Inorganic fillers; And a solvent, and satisfies the following formula (1).
[Formula 1]
6? TI = viscosity at 0.6 rpm / viscosity at 6.0 rpm? 9
In the above formula (1), the thixotropic index (TI) is a value calculated by substituting the viscosity measured at a rotation speed (rpm) with a spindle 51 using a rotational viscometer at 25 ° C.
The varnish composition according to claim 1, wherein the film for sealing a semiconductor element comprises a glass cloth.
The varnish composition according to claim 1, wherein the inorganic filler comprises particles having an average particle size range of 0.5 to 8 탆.
The varnish composition of claim 1, wherein the inorganic filler comprises silica.
The varnish composition according to claim 1, comprising 1 to 30% by weight of an epoxy resin, 1 to 30% by weight of a curing agent, 0.02 to 1.5% by weight of an inorganic filler, and 1 to 50% by weight of a solvent.
A film for semiconductor device encapsulation impregnated with glass cloth as the varnish composition of claim 1.
The film for sealing a semiconductor device according to claim 6, wherein the film has a thickness of 10 탆 to 120 탆.
The film for sealing a semiconductor device according to claim 6, wherein the film is used for sealing a semiconductor panel having an area of 300 mm to 300 mm and an area of 700 mm to 700 mm.
A method for producing a film for sealing a semiconductor element, comprising the step of coating the varnish composition of claim 1 and impregnating the glass cloth.
A semiconductor device sealed by using the film for sealing a semiconductor element of claim 6.

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