KR20190057695A - Gas feeding block assembly and Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a gas feeding block assembly and a substrate processing apparatus capable of simplifying a block structure of a gas feeding block assembly to shorten the processing time of the substrate processing apparatus, and more particularly, to a gas feeding block assembly and a substrate processing apparatus which include a body coupled to a chamber, A mixed gas discharge portion formed in a first portion of the body to supply a mixed gas in which a gas and at least one reaction gas are mixed; and a carrier gas inlet portion formed in the second portion of the body, A first flow path portion in which at least a portion of the first flow path portion is formed in the body so as to supply a gas; a first flow path portion in which a first source gas is mixed with the carrier gas from a first source gas inlet portion formed in a third portion of the body; At least a portion of which is formed in the body so as to supply the first source gas to the first intersecting portion of the body At least a part of the reaction gas is supplied from a reaction gas inlet formed in the fourth portion of the body to the second intersection of the first flow path portion in which the carrier gas and the reaction gas are mixed, A third flow path formed in the body and a portion of the first flow path connected to the first intersection so that the carrier gas can flow at all times, And a first feeding valve for opening / closing the second flow path portion so that the source gas can be selectively supplied.

Description

Technical Field The present invention relates to a gas feeding block assembly and a substrate processing apparatus,

The present invention relates to a gas feeding block assembly and a substrate processing apparatus, and more particularly, to a gas feeding block assembly and a substrate processing apparatus capable of simplifying a block structure of a gas feeding block assembly to shorten a process time of the substrate processing apparatus will be.

Methods for forming a thin film on a substrate can be roughly divided into physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods. In recent years, however, a CVD method with excellent step coverage and thin film uniformity . The CVD method can be divided into APCVD (Atmospheric Pressure CVD), LPCVD (Low Pressure CVD), PECVD (Plasma Enhanced CVD) and ALD (Atomic Layer Deposition). Among them, The ALD method, which is used in a deposition process requiring a fine pattern due to excellent step coverage, has recently been widely used.

Generally, in a substrate processing apparatus using an ALD method, a mixed gas in which a source gas and an inert gas are mixed and a reactive gas are sprayed onto a substrate in order to deposit a predetermined thin film on a substrate, In order to produce a mixed gas, a gas feeding block assembly may be used, which mixes a source gas and an inert gas introduced into the interior thereof, and then discharges the mixed gas to the outside to control the supply of the mixed gas to the showerhead.

However, such conventional gas feeding block assemblies and substrate processing apparatuses have a structure in which a source gas flow channel for supplying a mixed gas in which a source gas and an inert gas are mixed and a reaction gas flow channel for supplying a reactive gas are separated from each other by a showerhead, There is a problem that the gas supply structure from the feeding block assembly to the showerhead of the chamber is complicated. Further, since the source gas and the reactive gas are separately supplied to the showerhead, a separate mixing member for mixing the source gas and the reactive gas at one side of the showerhead, and a mixing space due to the additional mixing member are further required.

The present invention has been made to solve the above problems and it is an object of the present invention to provide a method and apparatus for supplying a mixed gas in which a source gas and an inert gas are mixed using a source gas and a reactive gas in a non- And a reaction gas flow path for supplying the reaction gas are integrated into the gas feeding block assembly and supplied to the showerhead. However, these problems are illustrative and do not limit the scope of the present invention.

According to one aspect of the present invention, there is provided an apparatus comprising: a body coupled to a chamber; A mixed gas discharge portion formed in a first portion of the body to supply a mixed gas in which at least one source gas and at least one reaction gas are mixed into the chamber; A first flow path portion formed at least partially inside the body so as to supply a carrier gas from the carrier gas inlet portion formed in the second portion of the body to the mixed gas outlet portion; Wherein at least a portion of the first source gas is supplied from a first source gas inlet formed in a third portion of the body so as to supply the first source gas to a first intersection portion of the first flow path portion in which the carrier gas and the first source gas are mixed, A second flow path formed inside the second flow path; And at least a part of which is formed in the body so as to supply the reaction gas from the reaction gas inlet formed in the fourth part of the body to the second intersection part of the first flow path part in which the carrier gas and the reaction gas are mixed, Euro portion; And a second flow path portion coupled to the first intersection portion to form a portion of the first flow path portion so that the carrier gas can flow at all times, and the first source gas can be selectively supplied to the first flow path portion. And a first feeding valve for opening / closing the second flow path portion, wherein the second intersection portion is formed at a rear portion of the first intersection portion with respect to a flow direction of the carrier gas flowing inside the first flow path portion .

In the gas-feeding block assembly, the second source gas is supplied from a second source gas inlet formed in a fifth portion of the body to a third intersection portion of the first channel portion in which the carrier gas and the second source gas are mixed At least a portion of which is formed in the body; And a second flow path formed in the first flow path portion, the second flow path portion being connected to the third intersection portion, wherein a portion of the first flow path portion is formed so that the carrier gas can flow at all times, And a second feeding valve for opening and closing the fourth flow path portion, and the third intersection portion may be formed between the first intersection portion and the second intersection portion of the first flow path portion.

In the gas feeding block assembly, the first flow path portion may include a first-type first flow path formed in the body so as to extend from the carrier gas inflow portion to the first intersection portion; A first-second flow path connected to the first-first flow path and formed in the first feeding valve so as to penetrate a portion of the first feeding valve; A first-third flow path connected to the first-second flow path and formed in the body so as to extend to the third intersection; A first to fourth channels formed inside the second feeding valve to be connected to the first to third flow paths so as to penetrate a part of the second feeding valve; And a first to eighth flow paths formed in the body so as to be connected to the first to fourth flow paths to reach the mixed gas discharge portion.

In the gas feeding block assembly, the first feeding valve is installed on the outer surface of the body at the first intersecting portion, and is connected to the second flow path portion at the first- And the second feeding valve is provided on the outer surface of the body at the second intersecting portion, and the second feeding valve is provided on the outer surface of the body at the second intersecting portion, The connecting portion of the first to fourth flow paths and the fourth flow path portion can be opened and closed by being connected to the flow path portion.

At least a portion of which is formed in the body so as to bypass the first source gas to a bypass discharge portion formed in a fifth portion of the body at an intermediate portion of the second flow path portion in the gas feeding block assembly, 1 bypass flow path portion; A second bypass flow path portion formed at least partially inside the body so as to bypass the second source gas from the intermediate portion of the fourth flow path portion to the bypass discharge portion; Wherein the first bypass flow path portion is formed in a connection portion between the second flow path portion and the first bypass flow path portion and the first source gas flowing in the second flow path portion is formed in the connection portion between the second flow path portion and the first bypass flow path portion, A first bypass valve for opening / closing the first bypass flow path portion so as to bypass the bypass flow path portion; And a second flow path portion provided at a connection portion between the fourth flow path portion and the second bypass flow path portion, wherein a part of the second bypass flow path portion is formed therein, and the second source gas flowing in the fourth flow path portion And a second bypass valve that opens and closes the second bypass flow passage so as to be bypassed to the second bypass flow passage.

And a control unit electrically connected to the first feeding valve, the second feeding valve, the first bypass valve, and the second bypass valve in the gas feeding block assembly to control opening and closing of each valve have.

In the gas feeding block assembly, when the first feeding valve is closed, the control unit opens the first bypass valve to maintain the pressure of the first source gas in the second flow path unit constant, 1 source gas to the first bypass flow path portion and to maintain the pressure of the second source gas in the fourth flow path portion constant when the second feeding valve is closed, Thereby bypassing the second source gas to the second bypass flow path portion.

In order to smoothly maintain the pressure of the first source gas in the second flow path portion when the first source gas is bypassed to the first bypass flow path portion in the gas feeding block assembly, And an orifice gasket formed at a connecting portion of the first bypass valve and the first bypass valve.

According to one aspect of the present invention, a substrate processing apparatus is provided. Wherein the substrate processing apparatus includes a chamber main body having an internal space formed therein for processing the substrate, the substrate main body being provided in the internal space and supporting the substrate; A chamber cover which is openably and closably provided on an upper portion of the chamber body so as to cover the inner space; A shower head installed on the chamber cover for spraying the mixed gas discharged to the mixed gas discharge portion of the gas feeding block assembly toward the substrate support; And a mixed gas supply line connecting the mixed gas discharge unit and the showerhead to supply the mixed gas discharged from the mixed gas discharge unit to the showerhead.

In the substrate processing apparatus, the body may include: a lower body coupled to a side surface of the chamber body; And an upper body coupled to a side surface of the chamber cover.

In the substrate processing apparatus, a first parting line, which is an interface between the lower body and the upper body, may be formed at the same position as a second parting line that is an interface between the chamber body and the chamber cover.

According to the apparatus for processing a substrate according to an embodiment of the present invention as described above, a mixed gas in which a source gas and an inert gas are mixed using a source gas and an inert gas in a non-plasma environment, A source gas flow path for supplying the reaction gas and a reaction gas flow path for supplying the reaction gas are integrated inside the gas feeding block assembly and finally a mixed gas in which the source gas, the inert gas and the reaction gas are mixed is supplied to the showerhead by a single supply line Lt; / RTI >

Accordingly, a separate mixing member for mixing the source gas and the reactive gas and a mixing space therefor are not required at one side of the showerhead, thereby simplifying the gas feeding block structure and precisely controlling the supply amount of the mixed gas, The uniformity of the thin film deposited on the substrate and the step coverage can be further improved. Further, by supplying the mixed gas in which the source gas, the inert gas and the reactive gas are mixed through the showerhead at one time, no additional additional purge gas injection time for injecting the purge gas between the source gas and the reactive gas injection time is required, It is possible to realize a gas feeding block assembly and a substrate processing apparatus which have the effect of shortening the temperature of the substrate processing apparatus. Of course, the scope of the present invention is not limited by these effects.

1 is a perspective view schematically illustrating a gas feeding block assembly according to an embodiment of the present invention.
Figure 2 is a perspective perspective view schematically illustrating the interior of the body of the gas-feeding block assembly of Figure 1;
Figs. 3 and 4 are cross-sectional views schematically showing a cut-away section of the gas-feeding block assembly of Fig.
5 is a flow chart schematically illustrating the gas flow of the gas feeding block assembly of FIG.
6 is a perspective view schematically showing a substrate processing apparatus according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a perspective view schematically showing a gas feeding block assembly 100 according to an embodiment of the present invention and FIG. 2 is a perspective view schematically illustrating the interior of the body 10 of the gas feeding block assembly 100 of FIG. It is a perspective view. 3 and 4 are cross-sectional views schematically illustrating a cut-away section of the gas-feeding block assembly 100 of FIG. 1, and FIG. 5 is a flow chart that schematically illustrates the gas flow of the gas-feeding block assembly 100 of FIG. 1 .

1 and 2, a gas feeding block assembly 100 according to an embodiment of the present invention mainly includes a body 10, a first flow path portion C1, The second bypass flow passage portion B2 and the first feed passage valve B2 are provided in the first bypass passage C2, the third flow passage C3, the fourth flow passage C4, the first bypass flow passage B1, The first feed valve PV-1, the second feed valve PV-2, the first bypass valve BV-1, and the second bypass valve BV-2.

As shown in FIG. 1, the body 10 may be formed in a rectangular parallelepiped shape as a whole, a rear surface may be coupled to the chamber C, and a mixing space may be formed in which at least one gas may be mixed. Further, the mixed gas discharge portion 20 may be formed in the first portion of the body 10 to supply a mixed gas in which the at least one source gas and the at least one reaction gas are mixed into the chamber (C).

More specifically, the first channel portion C1 through which the carrier gas flows in the body 10, the second channel portion C2 through which the first source gas flows, and the third channel portion through which the reactive gas flows, At least a portion of the first flow path portion C3 and the fourth flow path portion C4 through which the second source gas flows are formed so that at least one gas supplied from each of the flow path portions C1, The mixture gas is mixed with the mixed gas in the mixed space formed in a part near the mixed gas discharge unit 20 of the body C1 and discharged into the chamber C through the mixed gas discharge unit 20 formed on the upper surface of the body 10 .

More specifically, the body 10 may be a structure having at least one flow path portion capable of supplying or discharging gas therein, and having appropriate strength and durability to withstand the gas pressure inside the flow path portion. For example, the body 10 may be a structure selected from a material selected from the group consisting of steel, stainless steel, aluminum, magnesium, and zinc. However, the body 10 is not necessarily limited to those shown in Figs. 1 and 2, and members of various materials capable of withstanding the gas pressure inside the flow path portion can be applied.

2, the first flow path portion C1 can supply the carrier gas from the carrier gas inlet portion 30 formed in the second portion of the body 10 to the mixed gas outlet portion 20 At least a portion thereof may be formed inside the body 10.

The first channel portion C1 is formed on the front surface of the body 10 at the carrier gas inlet portion 30 formed on the right side of the body 10 and connected to the carrier gas supply line L1, The first-first flow path C1-1 and the first-second flow path C1 (C1) formed in the body 10 so as to extend to the first intersection portion M1 in which the first flow path PV- The first feeding valve PV-1 may be connected to the first feeding valve PV-1 so as to pass through the first feeding valve PV-1. .

In order to connect to the first-second flow path C1-2 and extend to the third intersection M3 where the second feeding valve PV-2 is installed on the front surface of the body 10, A first-third flow path C1-3 formed in a U-shape or a V-shape in the first feeding passage PV-2 and a second feeding valve PV- (C1-4) and the first-fourth flow path (C1-4) formed in the second feeding valve (PV-2) (C1-5) formed in a shape bent at 90 degrees inside the body (10) so as to extend to the second flow path (20).

The second flow path portion C2 is connected to the first flow path portion C1 of the first flow path portion C1 through which the carrier gas and the first source gas are mixed from the first source gas inflow portion 40 formed in the third portion of the body 10 At least a portion may be formed within the body 10 to supply the first source gas to the intersection Ml. At this time, at least a portion of the body (10) can be bypassed to bypass the first source gas to the bypass discharge portion (70) formed in the fifth portion of the body (10) The first bypass flow path portion B1 formed inside the first bypass flow path portion B1 may be formed.

More specifically, the second flow path portion C2 is formed on the front surface of the body 10 from the first source gas inlet portion 40 formed on the lower surface of the body 10 and connected to the first source gas supply line L2 May be formed at an angle of 90 degrees in the inside of the body 10 so as to lead to the first intersection portion M1 provided with the first feeding valve PV-1.

The first bypass flow path portion B1 is formed in the lower surface of the body 10 in the middle portion of the second flow path portion C2 and connected to the bypass discharge portion 70 connected to the bypass line L5 The portion B1-1 is formed in the inside of the body 10 in the left side face direction and the left side face direction in the back face direction of the body 10 in the downward direction at 90 degrees in the downward direction and the other portion B1 -2 may be formed in the first bypass valve BV-1 so as to connect the middle portion of the part B1-1 and the second flow path C2.

The third flow path portion C3 is connected to the second cross portion M2 of the first flow path portion C1 in which the carrier gas and the reaction gas are mixed from the reaction gas inflow portion 50 formed in the fourth portion of the body 10 At least a part of which can be formed inside the body 10 to supply the reaction gas.

The third flow path portion C3 is formed on the right side of the body 10 and extends from the reaction gas inlet portion 50 connected to the reaction gas supply line L4 to the first- May be formed in the inside of the body 10 in the top surface direction from the right side surface direction of the body 10 and in the direction of the left side surface direction from the top surface direction so as to lead to the middle portion of the 5-flow path C1-5. have. At this time, the second intersection portion M2 may be formed behind the first intersection portion M1 based on the flow direction of the carrier gas flowing in the first flow path portion C1.

The fourth flow path portion C4 is connected to the third flow path portion C1 of the first flow path portion C1 through which the carrier gas and the second source gas are mixed from the second source gas inflow portion 60 formed in the fifth portion of the body 10, At least a portion may be formed in the body 10 to supply the second source gas to the intersection M3. At this time, at least a portion of the second bypass gas may be bypassed from the intermediate portion of the fourth flow path C4 to the bypass discharge portion 70, The flow path portion B2 may be formed.

More specifically, the third flow path portion C2 is formed on the front surface of the body 10 from the second source gas inlet portion 60 formed on the lower surface of the body 10 and connected to the second source gas supply line L3 May be formed at an angle of 90 degrees in the inside of the body 10 so as to lead to the third intersection M3 provided with the second feeding valve PV-1. At this time, the third intersection M3 may be formed between the first intersection Ml and the second intersection Ml of the first flow path C1.

The second bypass flow path portion B2 is formed in the lower surface of the body 10 at the middle portion of the second flow path portion C4 and connected to the bypass discharge portion 70 connected to the bypass line L5 A portion B2-1 is formed in the inside of the body 10 in the left side direction and the left side direction in the back surface direction of the body 10 in the downward direction at 90 degrees in the downward direction and the other portion B2 -2 may be formed in the second bypass valve BV-2 so as to connect the middle portion of the part B2-1 and the fourth flow path C4.

Therefore, at least a part of each of the flow paths C1, C2, C3, and C4 is staggered in the inside of the body 10 so that the space inside the body 10 can be efficiently used, have. In addition, each flow path is formed only in combination of the width direction, the horizontal direction, and the vertical direction of the body 10, so that it can be formed simply by machining such as drilling in the body 10, The unused flow path portion of the flow path that is opened to the outside can be closed by using the blocking member F as shown in Fig. At this time, the blocking member F may be coupled to the flow path portion of the body 10 by screwing or tight fitting.

3, the first feeding valve PV-1 is coupled to the first intersecting portion M1, and the first feeding valve PV-1 is connected to the first crossing portion M1 so that the carrier gas can flow at all times. The second flow path portion C2 can be opened or closed so that the first flow path portion C1 can be selectively supplied to the first flow path portion C1.

The second feeding valve PV-2 is connected to the third intersecting portion M3 so that the carrier gas can flow constantly through the second feeding valve PV- The fourth flow path C4 may be formed so that the fourth flow path portion C4 can be opened or closed so that the second source gas can be selectively supplied to the first flow path portion C1.

More specifically, the first feeding valve PV-1 is installed on the outer surface of the body 10 at the first intersecting portion M1, and the second feeding valve PV- And is connected to the flow path portion C2 to open and close the connection portion between the first and second flow paths C1-2 and C2. The second feeding valve PV-2 is installed in parallel with the first feeding valve PV-1 on the outer surface of the body 10 at the second intersecting portion M2, The connection portion of the first to fourth flow paths C1-4 and the fourth flow path portion C4 can be opened and closed by being connected to the fourth flow path portion C4 at the four flow paths C1-4.

4, the first bypass valve BV-1 is provided at a connecting portion between the second flow path portion C2 and the first bypass flow path portion B1, A portion B1-2 of the path flow path portion B1 is formed and the first source gas flowing in the second flow path portion C2 is bypassed to the first bypass flow path portion B1, The bypass flow path portion B1 can be opened and closed.

The second bypass valve BV-2 is provided at a connection portion between the fourth flow path portion C4 and the second bypass flow path portion B2 and has a part of the second bypass flow path portion B2 The second bypass flow passage portion B2 is formed so that the second source gas flowing in the fourth flow passage portion C4 can be bypassed to the second bypass flow passage portion B2, Can be opened and closed.

At this time, in order to smoothly maintain the pressure of the first source gas in the second flow path portion C2 when the first source gas is bypassed to the first bypass flow path portion B1, An orifice gasket O may be installed at a connection portion between the first bypass valve B1 and the first bypass valve BV-1. For the same reason, the orifice gasket O may be installed at the connection portion of the second bypass passage B2 and the second bypass valve BV-2.

Therefore, as shown in FIG. 5, the carrier gas always flows in the direction of the mixed gas discharge portion 20 through the first flow path portion C1, and flows through the third flow path portion C3, The reaction gas can be continuously supplied to the second intersection portion M2 of the portion C1.

At this time, when the first feeding valve PV-1 is opened, the first source gas is supplied to the first intersection portion M1 of the first flow path portion C1 through the second flow path portion C2, A first mixed gas in which the first source gas and the reactive gas are mixed may be generated in the carrier gas in a mixed region formed in a portion near the mixed gas discharge portion 20 of the first flow path portion C1 . When the first feeding valve PV-1 is closed and the second feeding valve PV-2 is opened, the third crossing portion M3 of the first flow path portion C1 through the fourth flow path portion C4, In the mixed region in which the second source gas is supplied and is finally formed in a portion near the mixed gas discharge portion 20 of the first flow path portion C1, The second mixed gas can be produced.

Accordingly, when the thin film is deposited on the substrate by the atomic layer deposition method, the first feeding valve (PV-1) and the second feeding valve (PV-2) alternately open to open the first mixed gas and the second mixed gas Gas may be alternately supplied to the chamber C through one mixed gas discharge portion 20. [ If a plasma state is formed after the first mixed gas is supplied in the chamber C, the first thin film is deposited on the substrate. If the plasma is formed after the second mixed gas is supplied, A second thin film may be formed on the first thin film. In addition, when only one type of source is deposited on the substrate, one source gas flow path and one bypass flow path may be omitted.

5, when the first feeding valve PV-1 is closed, the pressure of the first source gas in the second flow path portion C2 can be kept constant. The first source gas is bypassed to the first bypass flow path portion B1 by opening the second feed valve PV-2 and the second feed valve PV- The second bypass valve BV-2 can be opened to bypass the second source gas to the second bypass flow passage portion B2 so that the pressure of the source gas can be kept constant. At this time, a control unit (not shown) is connected to the first feeding valve PV-1, the second feeding valve PV-2, the first bypass valve BV-1 and the second bypass valve BV- So that the opening and closing of each valve can be controlled.

Therefore, the gas-feeding block assembly 100 according to an embodiment of the present invention is capable of using a mixed gas in which a source gas and an inert gas are mixed by using a characteristic that the source gas and the reactive gas do not react in a non- The source gas flow path for supplying the reaction gas and the reaction gas flow path for supplying the reaction gas are integrated inside the gas feeding block assembly 100 and finally the mixed gas in which the source gas, the inert gas and the reaction gas are mixed is fed into a single feed line 90 To the showerhead (SH).

Therefore, a separate mixing member for mixing the source gas and the reaction gas at one side of the showerhead SH and a mixing space therefor are not further required, so that the gas feeding structure is simplified and the supply amount of the mixed gas is precisely controlled The uniformity of the thin film deposited on the substrate and the step coverage can be further improved. Further, by supplying the mixed gas in which the source gas, the inert gas and the reactive gas are mixed through the showerhead SH at one time, a separate additional purge gas injection time for injecting the purge gas between the source gas and the reactive gas injection time is unnecessary So that the process time can be shortened.

6 is a perspective view schematically showing a substrate processing apparatus 1000 according to an embodiment of the present invention.

6, a substrate processing apparatus 1000 according to an embodiment of the present invention includes the above-described gas feeding block assembly 100, an internal space capable of processing the substrate is formed, And a chamber cover C-1 installed on the upper portion of the chamber body C-1 so as to cover the inner space. The chamber cover C- A showerhead SH provided in the chamber cover C-2 for spraying the mixed gas discharged to the mixed gas discharge portion 20 of the gas-feeding block assembly 100 toward the substrate support, And a mixed gas supply line 90 for connecting the mixed gas discharge unit 20 and the showerhead SH so that the mixed gas discharged from the gas discharge unit 20 can be supplied to the showerhead SH have.

More specifically, the body 10 of the gas feeding block assembly 100 may be formed in a generally rectangular parallelepiped shape and the rear surface may be provided on the side of the chamber C. For example, the body 10 may include a lower body 11 installed on a side surface of the chamber body C-1 and an upper body 12 coupled to a side surface of the chamber cover C-2. The first parting line PL1 formed at the interface between the lower body 11 and the upper body 12 is divided into a second parting line PL1 formed on the interface between the chamber body C-1 and the chamber cover C- And may be formed at the same position as the line PL2.

The body 10 of the gas feeding block assembly 100 is separated into the lower body 11 provided in the chamber body C-1 and the upper body 12 provided in the chamber cover C-2 So that the gas feeding block assembly 100 is not separated from the chamber C even when the chamber C is opened, so that the maintenance of the equipment can be made easier.

A gasket G is formed between the lower body 11 and the upper body 12 of the body 10 so that the gap between the lower body 11 and the upper body 12, It is possible to maintain confidentiality effectively. More specifically, when the chamber C is locked using the locking device L provided on the side of the chamber C after closing the chamber C, the locking device L locks the chamber cover C- The gasket G formed between the lower body 11 and the upper body 12 is also compressed by the pulling force in the direction C-1 to maintain the airtightness between the lower body 11 and the upper body 12.

Therefore, the substrate processing apparatus 1000 according to an embodiment of the present invention can supply a mixed gas in which a source gas and an inert gas are mixed, using a characteristic that the source gas and the reactive gas do not react in an environment other than a plasma state And the reaction gas flow path for supplying the reaction gas are integrated inside the gas feeding block assembly 100. Finally, the mixed gas in which the source gas, the inert gas, and the reaction gas are mixed is fed into the single feeding line 90 To the head (SH).

Therefore, a separate mixing member for mixing the source gas and the reaction gas at one side of the showerhead SH and a mixing space therefor are not further required, so that the gas feeding structure is simplified and the supply amount of the mixed gas is precisely controlled The uniformity of the thin film deposited on the substrate and the step coverage can be further improved. Further, by supplying the mixed gas in which the source gas, the inert gas and the reactive gas are mixed through the showerhead SH at one time, a separate additional purge gas injection time for injecting the purge gas between the source gas and the reactive gas injection time is unnecessary So that the process time can be shortened.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: Body
20: Mixed gas discharge portion
30: Carrier gas inlet
40: first source gas inlet
50: reaction gas inlet
60: second source gas inlet
70: Bypass outlet
C1: first flow path portion
C2: second flow path portion
C3: third flow path portion
C4: fourth flow path portion
B1: first bypass flow path portion
B2: the second bypass flow path portion
PV-1: first feeding valve
PV-2: Second feeding valve
BV-1: First bypass valve
BV-2: Second bypass valve
C: chamber
SH: Shower head
100: gas feeding block assembly
1000: substrate processing apparatus

Claims (11)

A body coupled to the chamber;
A mixed gas discharge portion formed in a first portion of the body to supply a mixed gas in which at least one source gas and at least one reaction gas are mixed into the chamber;
A first flow path portion formed at least partially inside the body so as to supply a carrier gas from the carrier gas inlet portion formed in the second portion of the body to the mixed gas outlet portion;
Wherein at least a portion of the first source gas is supplied from a first source gas inlet formed in a third portion of the body so as to supply the first source gas to a first intersection portion of the first channel portion in which the carrier gas and the first source gas are mixed, A second flow path formed inside the body;
At least a part of which is formed in the body so as to be able to supply the reaction gas from the reaction gas inlet formed in the fourth part of the body to the second intersection part of the first flow path part in which the carrier gas and the reaction gas are mixed, 3 euros; And
And a second flow path for supplying the first source gas to the first flow path portion, wherein the first flow path portion is connected to the first crossing portion, wherein the first flow path portion is formed so that the carrier gas can flow at all times, And a first feeding valve for opening and closing the second flow path portion,
Wherein the second intersection portion is formed behind the first intersection portion with respect to a flow direction of the carrier gas flowing inside the first flow path portion. The method according to claim 1,
Wherein at least a portion of the second source gas is supplied from a second source gas inlet formed in a fifth portion of the body to a third intersection of the first channel portion in which the carrier gas and the second source gas are mixed, A fourth flow path portion formed inside the first flow path portion; And
And a second flow path for supplying the second source gas to the first flow path portion, wherein the second flow path portion is connected to the third crossing portion, and a portion of the first flow path portion is formed so that the carrier gas can flow at all times, And a second feeding valve for opening and closing the fourth flow path portion,
Wherein the third intersection portion is formed between the first intersection portion and the second intersection portion of the first flow path portion. 3. The method of claim 2,
Wherein the first flow-
A first-first flow path formed in the body so as to extend from the carrier gas inflow portion to the first intersection portion;
A first-second flow path connected to the first-first flow path and formed in the first feeding valve so as to penetrate a portion of the first feeding valve;
A first-third flow path connected to the first-second flow path and formed in the body so as to extend to the third intersection;
A first to fourth channels formed inside the second feeding valve to be connected to the first to third flow paths so as to penetrate a part of the second feeding valve; And
A first to eighth flow paths formed in the body so as to be connected to the first to fourth flow paths and to reach the mixed gas discharge portion;
And a gas delivery assembly. The method of claim 3,
Wherein the first feeding valve comprises:
The first and second flow paths are connected to the second flow path portion at the first and second flow paths formed inside the first crossing portion to open and close the connection portion between the first flow path and the second flow path portion ,
Wherein the second feeding valve comprises:
The first and fourth flow paths are connected to the fourth flow path portion at the first cross flow path formed inside the body at the second intersecting portion and opened and closed at the connection portion between the first flow path and the fourth flow path portion , A gas feeding block assembly. 3. The method of claim 2,
A first bypass flow passage formed in the body at least partially so as to bypass the first source gas from the intermediate portion of the second flow passage to a bypass discharge portion formed in a fifth portion of the body;
A second bypass flow path portion formed at least partially inside the body so as to bypass the second source gas from the intermediate portion of the fourth flow path portion to the bypass discharge portion;
Wherein the first bypass flow path portion is formed at a connection portion between the second flow path portion and the first bypass flow path portion, and a portion of the first bypass flow path portion is formed therein, and the first source gas flowing in the second flow path portion, A first bypass valve for opening / closing the first bypass flow path portion so as to bypass the bypass flow path portion; And
The second bypass flow path portion is formed in the connection portion between the fourth flow path portion and the second bypass flow path portion, and the second source gas flowing in the fourth flow path portion is formed in the connection portion between the fourth flow path portion and the second bypass flow path portion, A second bypass valve that opens and closes the second bypass flow passage so as to bypass the second bypass flow passage;
And a gas delivery assembly. 6. The method of claim 5,
A control unit electrically connected to the first feeding valve, the second feeding valve, the first bypass valve, and the second bypass valve to control opening and closing of each valve;
And a gas delivery assembly. The method according to claim 6,
Wherein,
When the first feeding valve is closed, the first bypass valve is opened to maintain the pressure of the first source gas in the second flow path portion at a constant level, so that the first source gas flows into the first bypass flow path portion And the second bypass valve is opened to keep the pressure of the second source gas in the fourth flow path unit constant when the second feeding valve is closed, Bypassing the bypass flow path. 6. The method of claim 5,
Wherein the first bypass passage portion and the first bypass passage portion are formed so as to smoothly maintain the pressure of the first source gas in the second flow passage portion when the first source gas is bypassed to the first bypass passage portion, An orifice gasket formed at a connecting portion of the valve;
And a gas delivery assembly. A gas feeding block assembly according to any one of claims 1 to 8;
A chamber main body in which an internal space for processing the substrate is formed, and a substrate support for supporting the substrate is provided in the internal space;
A chamber cover which is openably and closably provided on an upper portion of the chamber body so as to cover the inner space;
A shower head installed on the chamber cover for spraying the mixed gas discharged to the mixed gas discharge portion of the gas feeding block assembly toward the substrate support; And
A mixed gas supply line connecting the mixed gas discharge unit and the showerhead to supply the mixed gas discharged from the mixed gas discharge unit to the showerhead;
And the substrate processing apparatus. 10. The method of claim 9,
The body,
A lower body coupled to a side surface of the chamber body; And
An upper body coupled to a side surface of the chamber cover;
And the substrate processing apparatus. 11. The method of claim 10,
Wherein the first parting line formed at the interface between the lower body and the upper body is formed at the same position as the second parting line formed at the interface between the chamber body and the chamber cover.

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