KR20190028646A - 감광성 조성물, 중합체의 제조 방법, 감광성 조성물의 제조 방법, 적층체의 제조 방법 - Google Patents
감광성 조성물, 중합체의 제조 방법, 감광성 조성물의 제조 방법, 적층체의 제조 방법 Download PDFInfo
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- KR20190028646A KR20190028646A KR1020187033585A KR20187033585A KR20190028646A KR 20190028646 A KR20190028646 A KR 20190028646A KR 1020187033585 A KR1020187033585 A KR 1020187033585A KR 20187033585 A KR20187033585 A KR 20187033585A KR 20190028646 A KR20190028646 A KR 20190028646A
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
- C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/38—Polymerisation using regulators, e.g. chain terminating agents, e.g. telomerisation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/22—Esters containing halogen
- C08F220/24—Esters containing halogen containing perhaloalkyl radicals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polymerisation Methods In General (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016136414 | 2016-07-08 | ||
| JP2016136415 | 2016-07-08 | ||
| JPJP-P-2016-136414 | 2016-07-08 | ||
| JPJP-P-2016-136415 | 2016-07-08 | ||
| JP2017090779 | 2017-04-28 | ||
| JPJP-P-2017-090779 | 2017-04-28 | ||
| PCT/JP2017/024403 WO2018008610A1 (ja) | 2016-07-08 | 2017-07-03 | 感光性組成物、重合体の製造方法、感光性組成物の製造方法、積層体の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20190028646A true KR20190028646A (ko) | 2019-03-19 |
Family
ID=60912609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187033585A Withdrawn KR20190028646A (ko) | 2016-07-08 | 2017-07-03 | 감광성 조성물, 중합체의 제조 방법, 감광성 조성물의 제조 방법, 적층체의 제조 방법 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2018008610A1 (ja) |
| KR (1) | KR20190028646A (ja) |
| CN (1) | CN109415467A (ja) |
| TW (1) | TW201821456A (ja) |
| WO (1) | WO2018008610A1 (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019184716A (ja) * | 2018-04-04 | 2019-10-24 | 東京応化工業株式会社 | 撥液処理剤、及び被処理体の位置選択的撥液化方法 |
| WO2020188681A1 (ja) * | 2019-03-18 | 2020-09-24 | 株式会社ニコン | 露光システム、露光装置、及び露光方法 |
| JP7511183B2 (ja) * | 2020-09-17 | 2024-07-05 | パナソニックIpマネジメント株式会社 | 機能デバイス、および、機能デバイスの製造方法 |
| CN114276239B (zh) * | 2021-12-29 | 2023-10-27 | 徐州博康信息化学品有限公司 | 一种含缩酮结构酸敏感光刻胶树脂单体的制备方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5516484A (en) | 1978-07-24 | 1980-02-05 | Tokyo Inst Of Technol | Band semiconductor laser |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6366211A (ja) * | 1986-09-05 | 1988-03-24 | Sunstar Giken Kk | ジヒドロキシル基含有縮合性マクロモノマ− |
| JPH06157983A (ja) * | 1992-11-19 | 1994-06-07 | Nissan Motor Co Ltd | 塗料用樹脂組成物 |
| CN100427516C (zh) * | 2003-11-21 | 2008-10-22 | 大日本油墨化学工业株式会社 | 含氟光固化性组合物 |
| JP5358005B2 (ja) * | 2011-09-22 | 2013-12-04 | 富士フイルム株式会社 | ポジ型感光性アクリル樹脂およびポジ型感光性樹脂組成物 |
| KR101912158B1 (ko) * | 2011-09-22 | 2018-10-26 | 후지필름 가부시키가이샤 | 포지티브형 감광성 아크릴 수지 및 포지티브형 감광성 수지 조성물 |
| KR101511476B1 (ko) * | 2014-02-28 | 2015-04-10 | 스미또모 가가꾸 가부시키가이샤 | 감광성 수지 조성물 |
| JP5644970B1 (ja) * | 2014-02-28 | 2014-12-24 | 住友化学株式会社 | 感光性樹脂組成物 |
| JP2016018691A (ja) * | 2014-07-09 | 2016-02-01 | Jsr株式会社 | 表示又は照明装置 |
| JP2016172835A (ja) * | 2015-03-18 | 2016-09-29 | 東洋インキScホールディングス株式会社 | シリカ分散体、および、活性エネルギー線硬化性樹脂組成物 |
| JPWO2017082307A1 (ja) * | 2015-11-10 | 2018-10-18 | Agc株式会社 | 蛍光分析バイオチップ用感光性組成物、蛍光分析バイオチップの製造方法および蛍光分析バイオチップ |
| WO2017126570A1 (ja) * | 2016-01-19 | 2017-07-27 | 旭硝子株式会社 | バイオチップ用感光性樹脂組成物および撥液性膜の形成方法 |
-
2017
- 2017-07-03 WO PCT/JP2017/024403 patent/WO2018008610A1/ja not_active Ceased
- 2017-07-03 CN CN201780042319.2A patent/CN109415467A/zh active Pending
- 2017-07-03 JP JP2018526379A patent/JPWO2018008610A1/ja not_active Ceased
- 2017-07-03 KR KR1020187033585A patent/KR20190028646A/ko not_active Withdrawn
- 2017-07-07 TW TW106122833A patent/TW201821456A/zh unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5516484A (en) | 1978-07-24 | 1980-02-05 | Tokyo Inst Of Technol | Band semiconductor laser |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109415467A (zh) | 2019-03-01 |
| JPWO2018008610A1 (ja) | 2019-06-13 |
| WO2018008610A1 (ja) | 2018-01-11 |
| TW201821456A (zh) | 2018-06-16 |
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Legal Events
| Date | Code | Title | Description |
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| PA0105 | International application |
Patent event date: 20181120 Patent event code: PA01051R01D Comment text: International Patent Application |
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| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20200518 Comment text: Request for Examination of Application |
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| PC1202 | Submission of document of withdrawal before decision of registration |
Comment text: [Withdrawal of Procedure relating to Patent, etc.] Withdrawal (Abandonment) Patent event code: PC12021R01D Patent event date: 20211020 |
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| WITB | Written withdrawal of application |