KR20160112600A - Film Touch Sensor and Method for Fabricating the Same - Google Patents

Abstract

The present invention relates to a film touch sensor and a method for manufacturing the same and, more particularly, to a film touch sensor and a method for manufacturing the same. The film touch sensor comprises: a separation layer; an inorganic protective layer having a modulus of elasticity of 10 to 15 GPa and placed on the separation layer; and an electrode pattern layer placed on the inorganic protective layer. Therefore, the film touch sensor has excellent thermal resistance and can thus suppress thermal damage such as wrinkles, cracks and the like which may be caused during a high temperature deposition and annealing process, has excellent flexural characteristics and thus reduces the possibility of causing cracks during a peeling process, and can be applied as a flexible touch sensor and the like.

Description

Technical Field [0001] The present invention relates to a film touch sensor and a fabrication method thereof,

The present invention relates to a film touch sensor and a method of manufacturing the same.

There have been attempts to introduce a touch input method into a wider variety of electronic devices while the touch input method is being watched as a next generation input method. Accordingly, research and development on a touch sensor capable of being applied to various environments and capable of accurate touch recognition are actively performed have.

For example, in the case of an electronic device having a touch-type display, an ultra-thin flexible display which achieves light weight, low power and improved portability has been attracting attention as a next generation display, and development of a touch sensor applicable to such a display has been required.

Flexible display means a display made on a flexible substrate that can bend, bend or twist without loss of properties, and technology development is underway in the form of flexible LCDs, flexible OLEDs, and electronic paper.

In order to apply the touch input method to such a flexible display, a touch sensor having excellent flexing and restoring force and excellent flexibility and stretchability is required.

As for the film touch sensor for manufacturing such a flexible display, a wiring board including wiring buried in a transparent resin base is proposed.

A wiring forming step of forming a metal wiring on the carrier substrate; a lamination step of forming a transparent resin substrate by applying and drying a transparent resin solution so as to cover the metal wiring; and a peeling step of peeling the transparent resin substrate from the carrier substrate .

In order to smoothly carry out the peeling process, an organic peeling material such as silicone resin or fluororesin, a diamond like carbon (DLC) thin film, a zirconium oxide thin film, or other inorganic peeling material is applied to the surface of the substrate A method of forming in advance is used. However, when an inorganic stripper is used, there is a problem that the metal wiring and a part of the substrate remain on the surface of the substrate because the separation of the wiring and the substrate does not smoothly proceed when the substrate and the metal wiring are peeled off from the carrier substrate. There is a problem that the used organic material is deposited on the wiring and the surface of the substrate.

In order to solve this problem, Korean Patent Registration No. 1191865 discloses a method for manufacturing a flexible substrate in the form of a metal wiring embedded in a sacrificial layer, a metal wiring and a polymer material (Flexible substrate) is formed on the carrier substrate, and then the sacrificial layer is removed by using light or a solvent to separate the metal wiring and the polymer material (flexible substrate) from the carrier substrate.

However, such a method has a problem that it is difficult to remove the sacrificial layer in a large size, the metal wiring is directly exposed to a chemical solution such as a solvent, and a high temperature process is not possible, so that various film substrates can not be used.

Korean Patent No. 1191865

An object of the present invention is to provide a film touch sensor having a protective layer covering an electrode pattern layer.

An object of the present invention is to provide a film touch sensor having a protective layer excellent in heat resistance and capable of suppressing thermal damage that may occur during a high temperature deposition and annealing process.

An object of the present invention is to provide a film touch sensor having excellent bending properties.

An object of the present invention is to provide a method of manufacturing a film touch sensor having excellent heat resistance and bending properties.

1. separation layer;

An inorganic protective layer having an elastic modulus of 10 GPa to 15 GPa on the separation layer; And

And an electrode pattern layer disposed on the inorganic protective layer.

2. The film touch sensor of 1 above, wherein the inorganic protective layer is an inorganic oxide or inorganic nitride layer.

3. The film touch sensor of 1 above, wherein said inorganic protective layer is a silicon oxide layer.

4. The film touch sensor of 1 above, wherein said inorganic protective layer is less than 200 nm thick.

5. The film touch sensor of 1 above, wherein the electrode pattern layer has a thickness of 30 to 150 nm.

6. The film touch sensor according to 1 above, wherein the electrode pattern layer is manufactured through a high temperature process at 150 ° C to 250 ° C.

7. The film touch sensor of 1 above, further comprising a substrate film adhered on the electrode pattern layer through a point-adhesive layer.

8. The film touch sensor according to ⁷ above, wherein the viscous adhesive layer has a modulus of elasticity of 10 ⁷ Pa to 10 ⁹ Pa and a peel force of 10 N / 25 mm or more.

9. The film touch sensor of claim 7, further comprising a second protective layer positioned between the electrode pattern layer and the viscous layer.

10. An image display device comprising a film touch sensor according to any one of the above 1 to 9.

11. forming a separation layer on a carrier substrate;

Forming an inorganic protective layer having an elastic modulus of 10 GPa to 15 GPa on the separation layer;

Forming an electrode pattern layer on the inorganic protective layer; And

And separating the separation layer from the carrier substrate.

12. The method of manufacturing a film touch sensor according to 11 above, wherein the inorganic protective layer is a silicon oxide layer having a thickness of less than 200 nm.

13. The method of manufacturing a film touch sensor according to claim 11, wherein the inorganic protective layer is formed by curing at 160 to 240 캜 for 10 to 30 minutes after coating.

14. The method of manufacturing a film touch sensor according to claim 11, wherein the electrode pattern layer is formed through a high temperature process at 150 to 250 deg.

15. The method of claim 11, further comprising: forming a pressure-sensitive adhesive layer on the electrode pattern layer; And attaching a base film on the pressure-sensitive adhesive layer.

16. A method comprising: forming a separation layer on a carrier substrate;

Forming an inorganic protective layer having a thickness of less than 200 nm and an elastic modulus of 10 Gpa to 15 Gpa on the separation layer; And

And forming an electrode pattern layer on the inorganic protective layer through a high temperature process between 150 ° C and 250 ° C.

The film touch sensor of the present invention is excellent in heat resistance and can suppress thermal damage such as wrinkles, cracks, and color changes that may occur in a high temperature deposition and annealing process. Accordingly, the electrode pattern layer having a lower resistance can be realized by performing the high-temperature deposition and annealing process.

The film touch sensor of the present invention is excellent in bending property and thus has a low possibility of cracking during peeling, and can be applied to a flexible touch sensor or the like.

1 to 3 are schematic cross-sectional views of a film touch sensor according to an embodiment of the present invention.
4 and 5 are schematic process diagrams of a method of manufacturing a film touch sensor according to an embodiment of the present invention.

The present invention relates to a semiconductor device, An inorganic protective layer having an elastic modulus of 10 GPa to 15 GPa on the separation layer; And an electrode pattern layer disposed on the inorganic protective layer, it is possible to suppress heat damage such as wrinkles and cracks which may occur in a high-temperature deposition and annealing process due to excellent heat resistance, and is excellent in bending property, To a film touch sensor which can be applied to a flexible touch sensor or the like, and a manufacturing method thereof.

The film touch sensor of the present invention includes a separation layer, an inorganic protective layer, and an electrode pattern layer.

Hereinafter, the present invention will be described in detail with reference to the drawings.

1 is a schematic cross-sectional view of a film touch sensor according to an embodiment of the present invention.

The touch sensor of the present invention is manufactured by separating the manufactured laminated body from the carrier substrate 10 while the manufacturing process is proceeding on the carrier substrate 10 and the separation layer 20 is separated from the carrier substrate 10 Lt; / RTI >

The separation layer 20 becomes a layer that protects the electrode pattern layer 40 by covering the electrode pattern layer 40 without being removed after separation from the carrier substrate 10.

The separation layer 20 may be a polymer organic film, and may be a polyimide-based polymer, a poly vinyl alcohol-based polymer, a polyamic acid-based polymer, a polyamide-based polymer , A polymer based on polyethylene, a polymer based on polystyrene, a polymer based on polynorbornene, a polymer based on phenylmaleimide copolymer, a polymer based on polyazobenzene, a polymer based on polyphenylene phthalamide based polymer, a polyphenylenephthalamide-based polymer, a polyester-based polymer, a polymethyl methacrylate-based polymer, a polyarylate-based polymer, a cinnamate-based polymer, a coumarin- A phthalimidine-based polymer, a chalcone-based polymer, and an aromatic acetylene-based polymer may be used. It is not limited. These may be used alone or in combination of two or more.

The separating layer 20 is easily peeled off from the carrier substrate 10 and is peeled off from the protective layer 30 to be described later at the peeling time so that the peeling force of the material against the carrier substrate 10 is 1 N / Or less.

The thickness of the separation layer 20 is preferably 10 to 1000 nm, more preferably 50 to 500 nm. If the thickness of the separating layer 20 is less than 10 nm, the uniformity of the separating layer 20 may be deteriorated and the electrode pattern may be unevenly formed or the separating layer 20 may peel off locally, There is a problem that the curl of the film touch sensor is not controlled. If the thickness exceeds 1000 nm, the peeling force is not lowered further, and the flexibility of the film is deteriorated.

The protective layer 30 is disposed on the separation layer 20 and covers the electrode pattern layer 40 as in the separation layer 20 so as to prevent contamination of the electrode pattern layer 40 and separation And serves to prevent the electrode pattern layer 40 from being broken.

In the case of a typical organic protective layer, deformation such as wrinkles may occur due to high heat applied at the time of manufacturing the electrode pattern layer 40 to be described later, or cracks may be caused in the electrode pattern layer 40 by thermal stress. Further, there is a problem in that it is difficult to increase the elasticity and the bending property is insufficient.

However, the inorganic protective layer 30 according to the present invention is made of an inorganic material and is excellent in heat resistance, and can reduce cracks due to thermal deformation and thermal stress. Thus, the electrode pattern layer 40 having a lower resistance can be realized by performing a high-temperature deposition and annealing process. Further, the chemical resistance is excellent, and swelling and peeling of the separation layer 20 are suppressed.

The inorganic material constituting the inorganic protective layer 30 is not particularly limited as long as it is an inorganic material, and may be, for example, an inorganic oxide, an inorganic nitride, or the like. Examples of the inorganic oxide include silicon oxide, alumina, and titanium oxide. Examples of the inorganic nitride include silicon nitride and titanium nitride. It may preferably be silicon oxide in view of realizing a high transmittance.

The inorganic protective layer 30 according to the present invention may have an elastic modulus ranging from 10 GPa to 15 GPa. When the modulus of elasticity is less than 10 GPa or exceeds 15 GPa, cracks may occur in the inorganic protective layer 30, the electrode pattern layer 40, or the touch sensor when the manufactured film touch sensor is peeled from the carrier substrate 10.

The method of allowing the inorganic protective layer 30 to have the elastic modulus range is not particularly limited and can be adjusted by controlling the thickness and the curing density of the inorganic protective layer 30, for example. Specific examples of controlling the curing density include curing at 160 ° C to 240 ° C for 10 to 30 minutes, preferably 180 to 220 ° C for 15 minutes to 25 minutes after coating the inorganic protective layer 30, But is not limited thereto.

The thickness of the inorganic protective layer 30 is not particularly limited as long as it exhibits the elastic modulus, and may be, for example, less than 200 nm. When the thickness is 200 nm or more, it may be difficult to satisfy the elastic modulus range, and a crack may be generated in the protective layer, the electrode pattern layer 40, or the touch sensor when peeling the manufactured film touch sensor from the carrier substrate 10. For example, 10 nm to 190 nm, 10 nm to 195 nm, 20 nm to 190 nm, 30 nm to 150 nm, and the like within the above range.

On the inorganic protective layer 30, an electrode pattern layer 40 is disposed.

The electrode pattern layer 40 may include not only an electrode for sensing touch but also a wiring pattern connected to the electrode.

As the electrode pattern layer 40, any conductive material may be used without limitation, and examples thereof include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO) Indium zinc oxide (IZO-Ag-IZO), indium zinc oxide (ITO-Ag-ITO), gallium zinc oxide (GZO), florine tin oxide (FTO), indium tin oxide- Metal oxide materials selected from the group consisting of tin oxide-silver-indium zinc tin oxide (IZTO-Ag-IZTO) and aluminum zinc oxide-silver-aluminum zinc oxide (AZO-Ag-AZO); Metals selected from the group consisting of gold (Au), silver (Ag), copper (Cu), molybdenum (Mo) and APC (Ag, Pd, Cu alloy); Nanowires of metals selected from the group consisting of gold, silver, copper and lead; Carbon-based materials selected from the group consisting of carbon nanotubes (CNT) and graphene; And a conductive polymer material selected from the group consisting of poly (3,4-ethylenedioxythiophene) (PEDOT) and polyaniline (PANI). These may be used alone or in combination of two or more.

The electrode pattern layer 40 may be formed of two or more conductive layers in the form of a first electrode layer and a second electrode layer in some cases in order to reduce electrical resistance.

In one embodiment, the electrode pattern layer 40 may be formed of one layer of ITO, silver nanowire (AgNW), or metal mesh. When two or more layers are formed, the first electrode layer may be formed of a transparent metal oxide such as ITO And a second electrode layer may be formed on the ITO electrode layer using metal, AgNW or the like in order to further lower the electrical resistance.

In order to improve the electrical conductivity of the electrode pattern layer 40, at least one electrode pattern layer 40 made of metal or metal oxide may be formed. More specifically, the electrode pattern layer 40 may be formed by forming a transparent conductive layer of a metal or a metal oxide on the separation layer 20 or the protective layer and then further laminating the transparent conductive layer to form an electrode pattern, 20 or a transparent conductive layer of one or more layers on the protective layer and then forming a transparent conductive layer of metal or metal oxide to form an electrode pattern. A specific example of the lamination structure of the electrode pattern is as follows. A structure in which a metal or metal oxide pattern layer is further formed between the separation layer 20 and the electrode pattern layer 40, a structure in which a metal or metal oxide pattern layer is further formed between the electrode pattern layer 40 and the insulation layer, And a metal or metal oxide pattern layer may be further formed between the electrode pattern layer 40 and the electrode pattern layer 40. The electrode pattern layer 40 may further include one or more electrode pattern layers 40 made of a transparent conductive material.

A specific example of the lamination structure of the applicable electrode pattern layer 40 is as follows.

A structure in which a metal oxide is stacked and a silver nanowire is stacked thereon, a structure in which a metal oxide is stacked and a metal is stacked thereon, a structure in which a metal oxide is stacked and a metal mesh electrode is stacked thereon, A structure in which a metal oxide is laminated on a metal mesh electrode, a structure in which a metal oxide is laminated on a metal mesh electrode, a structure in which a metal oxide is laminated on a metal mesh electrode, A structure in which nanowires are stacked and a metal layer is further stacked on the nanowires, a structure in which silver nanowires are stacked, a metal oxide is stacked on the nanowires, and a metal layer is further stacked thereon. The signal processing and the resistance of the laminated structure described above, and is not limited to the laminated structure described above.

In the electrode pattern layer 40, an electrical insulating layer may be formed between the first electrode pattern layer 40 and the second electrode pattern layer 40, and a contact hole may be formed by patterning the electrical insulating layer, May be formed to be a bridge electrode.

The structure of the electrode pattern layer 40 will be described below in terms of the touch sensor method.

The pattern structure of the electrode pattern layer 40 is preferably an electrode pattern structure used in the electrostatic capacity method, and mutual-capacitance or self-capacitance may be applied.

In case of mutual-capacitance, it may be a lattice electrode structure having a horizontal axis and a vertical axis. Bridge electrodes may be formed at the intersections of the electrodes on the horizontal axis and the vertical axis or the horizontal axis electrode pattern layer 40 and the vertical axis electrode pattern layer 40 may be formed and electrically separated from each other.

In the case of a self-capacitance type, it may be an electrode layer structure in which a change in capacitance is read using one electrode at each point.

The electrode pattern layer 40 is preferably formed to include a high-temperature heat treatment process in order to realize a low resistance. The high temperature may be, for example, 150 ° C to 250 ° C. Specifically, it may be formed by a deposition process at 150 ° C to 250 ° C, or may be formed at room temperature deposition and a heat treatment process at 150 ° C to 250 ° C, but is not limited thereto.

The film touch sensor of the present invention may further include a base film adhered to the electrode pattern layer 40 through the adhesive layer 50. 2 is a schematic cross-sectional view of a film touch sensor according to one embodiment.

The pressure-sensitive adhesive layer (50) means an adhesive layer or an adhesive layer.

As the base film 60, a transparent film made of a material widely used in the art can be used without limitation, for example, a cellulose ester (e.g., cellulose triacetate, cellulose propionate, cellulose butyrate, cellulose acetate Propionate, and nitrocellulose), polyimides, polycarbonates, polyesters such as polyethylene terephthalate, polyethylene naphthalate, poly-1,4-cyclohexanedimethylene terephthalate, polyethylene 1,2-diphenoxyethane 4,4'-dicarboxylate and polybutylene terephthalate, polystyrenes such as syndiotactic polystyrenes, polyolefins such as polypropylene, polyethylene and polymethylpentene, polysulfone, polyethersulfone , Polyarylate, polyether-imide, polymethylmethacrylate, polyetherketone, Polyvinyl alcohol and polyvinyl chloride, or a film made of a mixture thereof.

Further, the transparent film may be an isotropic film or a retardation film.

Nx and ny are the main indices of refraction in the film plane, nz is the refractive index in the film thickness direction, d is the film thickness) is 40 nm or less, and 15 nm And the retardation in the thickness direction (Rth, Rth = [(nx + ny) / 2-nz] xd) is from -90 nm to +75 nm, preferably -80 nm to +60 nm, desirable.

The retardation film is a film produced by the uniaxial stretching, biaxial stretching, polymer coating and liquid crystal coating method of a polymer film, and is generally used for improving the viewing angle of the display, improving the color feeling, improving the light leakage, do.

A polarizing plate may also be used as the base film 60.

The polarizing plate may be one having a polarizer protective film attached on one side or both sides of a polyvinyl alcohol polarizer.

Further, a protective film may be used as the base film 60.

The protective film may be a film including an adhesive layer on at least one side of a film made of a polymer resin, or a self-adhesive film such as polypropylene, and may be used for protecting the surface of the touch sensor and improving the process precision.

The light transmittance of the base film 60 is preferably 85% or more, and more preferably 90% or more. The haze value of the base film 60 measured according to JIS K7136 is preferably 10% or less, more preferably 7% or less.

The thickness of the base film 60 is not limited, but is preferably 30 to 150 占 퐉, and more preferably 70 to 120 占 퐉.

As the pressure-sensitive adhesive or adhesive, thermosetting or photocurable pressure-sensitive adhesives or adhesives well known in the art can be used without limitation. For example, thermosetting or photo-curable pressure-sensitive adhesives or adhesives such as polyester-based, polyether-based, urethane-based, epoxy-based, silicone-based or acrylic-

The pressure-sensitive adhesive layer 50 preferably has a modulus of elasticity of 10 ⁷ Pa or more in terms of suppressing the occurrence of cracks during the peeling process of the film touch sensor. The elastic modulus may preferably be from 10 ⁷ Pa to 10 ⁹ Pa in view of suppressing the occurrence of cracks and exhibiting an excellent adhesive force at the same time.

The peeling strength of the pressure-sensitive adhesive layer 50 is preferably 10 N / 25 mm or more in view of suppressing the occurrence of cracks during the peeling process of the film touch sensor.

The film touch sensor of the present invention may further include a second protective layer 70 positioned between the electrode pattern layer 40 and the adhesive layer 50. 3 is a schematic cross-sectional view of a film touch sensor according to one embodiment.

The second protective layer 70 covers the electrode pattern layer 40 to prevent the electrode pattern layer 40 from being corroded and prevents the electrode pattern layer 40 from being damaged by static electricity.

The second protective layer 70 may be a layer formed of the same material as the organic insulating layer or the inorganic protective layer 30.

Another object of the present invention is to provide an image display apparatus including the film touch sensor.

The film touch sensor of the present invention is applicable not only to a general liquid crystal display but also to various image display devices such as an electroluminescence display, a plasma display, and a field emission display.

Further, the film touch sensor of the present invention is excellent in bending property, and the image display device can be a flexible image display device.

The present invention also provides a method of manufacturing a film touch sensor.

4 and 5 are schematic process diagrams of a method of manufacturing a film touch sensor according to an embodiment of the present invention. This is an embodiment in which the step of adhering a base film described below is included, but the present invention is not limited thereto.

Hereinafter, the present invention will be described in detail with reference to the drawings.

First, as shown in Fig. 4 (a), the separation layer 20 is formed on the carrier substrate 10.

The carrier substrate 10 may be used without any particular limitation if it is a material that provides adequate strength to be fixed without being bent or twisted during the process, and has little influence on heat or chemical treatment. For example, glass, quartz, silicon wafer, cloth or the like can be used, and preferably, glass can be used.

The separation layer 20 can be formed of the above-described polymer material.

In the case of the separation layer 20, separation from the carrier substrate 10 may be difficult. In the case of the electrode pattern layer 40 formed of a metal material, separation from the carrier substrate 10 may be difficult. It is possible to reduce problems such as damage to the electrode pattern layer 40 due to less impact applied to the touch sensor when peeling off the carrier substrate 10.

The separating layer 20 may preferably have a peeling force of 1 N / 25 mm or less with respect to the carrier substrate 10 in view of minimizing physical damage during peeling.

The method of forming the separation layer 20 is not particularly limited and may be a slit coating method, a knife coating method, a spin coating method, a casting method, a micro gravure coating method, a gravure coating method, a bar coating method, A dip coating method, a spray coating method, a screen printing method, a gravure printing method, a flexo printing method, an offset printing method, an ink jet coating method, a dispenser printing method, a nozzle coating method, Can be done.

After the separation layer 20 is formed by the above-described method, an additional curing process may be further carried out.

The curing method of the separating layer 20 is not particularly limited, and it is possible to use both of the above methods by photocuring or thermosetting. The order of the photo-curing and the thermal curing is not particularly limited.

Next, as shown in FIG. 4 (b), an inorganic protective layer 30 having an elastic modulus of 10 GPa to 15 GPa is formed on the separation layer 20.

The inorganic protective layer 30 may be formed of the above-mentioned material and the method of forming the inorganic protective layer 30 is not particularly limited. The inorganic protective layer 30 may be formed by a physical vapor deposition method, a chemical vapor deposition method, a plasma deposition method, a plasma polymerization method, a thermal vapor deposition method, a thermal oxidation method, A screen printing method, a gravure printing method, a flexo printing method, an offset printing method, an ink jet coating method, a dispenser printing method, and the like.

The inorganic protective layer 30 may be formed to have the thickness range described above.

The inorganic protective layer 30 can be manufactured by the above-described method and then subjected to a high-temperature curing process after coating. For example, at 160 캜 to 240 캜 for 10 to 30 minutes, preferably at 180 to 220 캜 for 15 to 25 minutes, but the present invention is not limited thereto.

4 (c), an electrode pattern layer 40 is formed on the inorganic protective layer 30. Then, as shown in Fig.

The electrode pattern layer 40 can be formed by the same method as the method of forming the inorganic protective layer 30 described above.

The electrode pattern layer 40 may be formed through a high-temperature process at 150 ° C to 250 ° C in terms of ensuring that the electrode pattern layer 40 has a low resistance. For example, it may be formed by a deposition process at 150 ° C to 250 ° C, or may be formed at room temperature deposition and a heat treatment process at 150 ° C to 250 ° C, but the present invention is not limited thereto.

Next, as shown in Fig. 4 (e), the separation layer 20 is peeled from the carrier substrate 10.

The laminated body in which the separating layer 20, the inorganic protective layer 30 and the electrode pattern layer 40 are stacked in this order can be obtained on the carrier substrate 10, The laminate can be used as a film touch sensor by peeling off the substrate 10.

The method of manufacturing a film touch sensor of the present invention may further include a step of attaching a base film on the electrode pattern layer 40, as shown in FIG. 4 (d). Specifically, the method includes: forming an adhesive layer (50) on the electrode pattern layer (40); And attaching a base film on the adhesive layer (50).

In this case, the peeling process may be performed before or after the attachment of the base film. Fig. 5 illustrates a case where the peeling process proceeds after the adhesion of the base film.

The pressure-sensitive adhesive layer 50 may be formed of the above-described pressure-sensitive adhesive or adhesive. The pressure-sensitive adhesive layer 50 may be formed by any one of a slit coating method, a knife coating method, a spin coating method, a casting method, a microgravure coating method, a gravure coating method, A coating method such as a wire bar coating method, a dip coating method, a spray coating method, a screen printing method, a gravure printing method, a flexo printing method, an offset printing method, an ink jet coating method, a dispenser printing method, a nozzle coating method, On the electrode pattern layer 40, and dried or cured.

It is preferable that the pressure-sensitive adhesive layer (50) has the above-described range of the modulus of elasticity and the range of the peel force in terms of suppressing cracking of the film touch sensor during the peeling process.

The method of manufacturing a film touch sensor of the present invention may further include forming a second protective layer (70) on the electrode pattern layer (40) before attaching the base film.

The second protective layer 70 may be formed by the same method as that used for forming the separation layer 20 with the above-described material.

The second protective layer 70 may be formed before or after the peeling.

It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to be illustrative of the invention and are not intended to limit the scope of the claims. It will be apparent to those skilled in the art that such variations and modifications are within the scope of the appended claims.

Example  One

50 parts by weight of a melamine resin and 50 parts by weight of a cinnamate resin were dissolved in a concentration of 10% by weight of propylene glycol monomethyl ether The separation layer composition was diluted with acetone (PGMEA) to a thickness of 300 nm by spin coating and dried at 150 ° C for 30 minutes to form a separation layer.

Subsequently, SiOx Precursor (hexamethyldisilazane) was coated on the entire surface through an atmospheric plasma apparatus. At this time, the nozzle gap was maintained at 50 mm, coated at a rate of 500 mm / min, and cured at 200 ° C for 20 minutes to form an inorganic protective layer having a thickness of 60 nm. Thereafter, ITO was deposited to a thickness of 35 nm at a room temperature of 25 DEG C, and an ITO layer was annealed at 230 DEG C for 30 minutes to form an electrode pattern layer.

40 parts by weight of a polyfunctional acrylic monomer and 60 parts by weight of an epoxy resin were mixed with 30 parts by weight of diethylene glycol methyl ethyl ether (MEDG), PGMEA and 3-methoxybutanol, , 40 parts by weight, and 30 parts by weight) was applied by spin coating to a thickness of 2 탆 and irradiated with UV at 200 mJ / cm ² to perform photo-curing, And dried and cured at 200 DEG C for 30 minutes to form a second protective layer.

Then, 50 parts by weight of a monomer CEL2021P ((3,4-Epoxycyclohexane) methyl 3,4-Epoxy cyclohexylcarboxylate including a polymerization initiator SP500 and a leveling agent KRM230, and 50 parts by weight of NPGDGE (Neo-Pentyl Glycol DiGlycidyl Ether) , 10 parts by weight of 1,6-hexanediol diacrylate, 5 parts by weight of trimethylolpropane triacrylate, 10 parts by weight of adhesion promoter KRM0273 and 5 parts by weight of 4-HBVE as a diluting monomer were added to 60 parts by weight of 60 Mu] m TAC film and the second protective layer as a sphere and pressed with a roll laminate to make the thickness of the adhesive layer 2 [mu] m.

The adhesive layer was irradiated with ultraviolet rays of 10 mW / cm ² intensity for 100 seconds, closely contacted, dried in an oven at 80 캜 for 10 minutes, and then allowed to stand at room temperature.

Example  2

A film touch sensor was prepared in the same manner as in Example 1, except that the thickness of the inorganic protective layer was 120 nm.

Example  3

A film touch sensor was manufactured in the same manner as in Example 1 except that the thickness of the inorganic protective layer was changed to 200 nm.

Example  4

A film touch sensor was manufactured in the same manner as in Example 1, except that the thickness of the inorganic protective layer was 190 nm.

Example  5

A film touch sensor was manufactured in the same manner as in Example 1, except that the inorganic protective layer was formed of TiO ₂ .

Comparative Example  One

Instead of forming the inorganic protective layer, a first protective layer composition (40 parts by weight of polyfunctional acrylic monomer and 60 parts by weight of epoxy resin) was mixed on the electrode pattern layer to prepare a solution of diethylene glycol methyl ethyl ether (MEDG), PGMEA and 3- Methoxybutanol, 30 parts by weight, 40 parts by weight and 30 parts by weight, respectively) was applied by spin coating to a thickness of 2 탆, UV was applied at a rate of 200 mJ / cm ² And photo-curing was carried out. The resultant was dried and cured at 200 占 폚 for 30 minutes to form a first protective layer,

A film touch sensor was manufactured in the same manner as in Example 1, except that the annealing of the ITO layer was not performed.

Comparative Example  2

A film touch sensor was prepared in the same manner as in Comparative Example 1, except that the ITO layer was annealed at 230 캜 for 30 minutes.

Comparative Example  3

A film touch sensor was prepared in the same manner as in Example 1, except that the inorganic protective layer was formed by coating SiO ₂ , curing at 150 ° C for 20 minutes, and the ITO annealing condition at 80 ° C for 10 minutes.

Comparative Example  4

A film touch sensor was prepared in the same manner as in Example 1, except that the inorganic protective layer was coated with SiO _x and cured at 250 캜 for 20 minutes, and the ITO annealing condition was set at 300 캜 for 60 minutes.

Experimental Example

(One) Modulus of elasticity  Measure

The elastic modulus of the inorganic protective layer (first protective layer) of the film touch sensor of Examples and Comparative Examples was measured with a nanoindenter. Each substrate was set on a nanoindenter and pressed to a force of 2000 mN to measure the elastic modulus of the exposed inorganic protective layer (first protective layer).

(2) Sheet resistance  Measure

The surface resistance of the electrode pattern layer of the film touch sensor of Examples and Comparative Examples was measured by a 4-point probe.

(3) Measurement of transmittance

Using a haze meter (HM-150, Murakami), the total light transmittance of the film touch sensors of Examples and Comparative Examples was measured, and the transmittance of the glass touch substrate was calculated.

(4) Color evaluation

The color b values of the film touch sensors of Examples and Comparative Examples were measured with an N & K analyzer (N & K Technology Inc.).

(5) Whether or not the protective layer is wrinkled

In the film touch sensors of Examples and Comparative Examples, occurrence of wrinkles in the inorganic protective layer or the first protective layer was observed under a microscope to check whether wrinkles were generated.

(6) peeling off crack  Assessment of occurrence

The produced film touch sensors of Examples and Comparative Examples were peeled off from the carrier substrate, and the occurrence of cracks in the peeled film touch sensor was observed with a microscope to evaluate whether or not cracks were generated according to the following criteria.

○: No cracks on the front

C: Cracks occurred in some areas

X: Cracking across the front

division Example 1 Example 2 Example 3 Example 4 Example 5 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 The elastic modulus of the protective layer (GPa) 10 11 14.9 14.4 15.0 4.9 5.4 8.9 15.3 Sheet resistance (Ω / □) 35.5 37.2 37.1 36.7 48.2 171 127 34.7 25 Transmittance (%) 92.6 91.8 92.1 91.6 65.1 88 90 90.7 92.2 Color b * 1.0 0.8 1.3 1.1 1.5 4 2.7 1.3 0.9 Bend radius
(mm) 3 5 5 5 5 5 5 5 7 Protective layer wrinkles none none none none none none Occur none none Peeling crack ○ ○ △ ○ ○ ○ X X X

Referring to Table 1, it can be seen that the film touch sensor of the embodiment having the protective layer of the modulus of elasticity of the present invention has little color change, wrinkle and cracking even after ITO annealing.

However, in the film touch sensor of the comparative example, the protection layer was wrinkled or peeled by the ITO annealing.

10: carrier substrate 20: separation layer
30: inorganic protective layer 40: electrode pattern layer
50: a pressure-sensitive adhesive layer 60:
70: Second protective layer

Claims (16)

A separation layer;
An inorganic protective layer having an elastic modulus of 10 GPa to 15 GPa on the separation layer; And
And an electrode pattern layer disposed on the inorganic protective layer.
The film touch sensor of claim 1, wherein the inorganic protective layer is an inorganic oxide or inorganic nitride layer.
The film touch sensor of claim 1, wherein the inorganic protective layer is a silicon oxide layer.
The film touch sensor of claim 1, wherein the inorganic protective layer is less than 200 nm thick.
The film touch sensor of claim 1, wherein the electrode pattern layer has a thickness of 30 to 150 nm.
The film touch sensor according to claim 1, wherein the electrode pattern layer is manufactured through a high-temperature process at 150 ° C to 250 ° C.
The film touch sensor according to claim 1, further comprising a base film adhered on the electrode pattern layer through a point-adhesive layer.
The film touch sensor according to claim 7, wherein the viscous adhesive layer has a modulus of elasticity of 10 ⁷ Pa to 10 ⁹ Pa and a peel force of 10 N / 25 mm or more.
8. The film touch sensor of claim 7, further comprising a second passivation layer positioned between the electrode pattern layer and the visco-sensitive layer.
An image display device comprising the film touch sensor according to any one of claims 1 to 9.
Forming a separation layer on the carrier substrate;
Forming an inorganic protective layer having an elastic modulus of 10 GPa to 15 GPa on the separation layer;
Forming an electrode pattern layer on the inorganic protective layer; And
And separating the separation layer from the carrier substrate.
12. The method of manufacturing a film touch sensor according to claim 11, wherein the inorganic protective layer is a silicon oxide layer having a thickness of less than 200 nm.
[12] The method of claim 11, wherein the inorganic protective layer is formed by curing at 160 to 240 [deg.] C for 10 to 30 minutes after coating.
[12] The method of manufacturing a film touch sensor according to claim 11, wherein the electrode pattern layer is formed through a high temperature process at 150 [deg.] C to 250 [deg.] C.
[12] The method of claim 11, further comprising: forming a pressure-sensitive adhesive layer on the electrode pattern layer; And attaching a base film on the pressure-sensitive adhesive layer.
Forming a separation layer on the carrier substrate;
Forming an inorganic protective layer having a thickness of less than 200 nm and an elastic modulus of 10 Gpa to 15 Gpa on the separation layer; And
And forming an electrode pattern layer on the inorganic protective layer through a high temperature process between 150 ° C and 250 ° C.

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