KR20140081662A - Organic electro luminescent device and method of fabricating the same - Google Patents

Abstract

The present invention provides an organic electroluminescence device including: a substrate where a pixel area comprising a light emitting area and a driving are is defined; a thin film transistor comprised in the driving area on the substrate; a first protection layer formed on the whole surface of the thin film transistor; a first light blocking pattern formed by being connected to a gate electrode of each thin film transistor in correspondence to each thin film transistor on the first protection layer; a color filter layer formed on the first protection layer according to each pixel area; a second light blocking pattern formed with a material equal to a material forming the color filter layer in correspondence to an upper part and a side of each thin film transistor on the first light blocking pattern; a first electrode formed as being connected to a drain electrode of the thin film transistor on the color filter layer according to each pixel area; an organic emission layer formed on the first electrode; and a second electrode formed on the organic emission layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device and a method of fabricating the same,

The present invention relates to an organic electro luminescent device, and more particularly to an organic electroluminescent device capable of minimizing the influence on switching or driving thin film transistors due to external light or light emitted from a light emitting layer, and a method of manufacturing the same. .

An organic electroluminescent device, which is one of flat panel displays (FPDs), has high luminance and low operating voltage characteristics. In addition, since it is a self-luminous type that emits light by itself, it has a large contrast ratio, can realize an ultra-thin display, can realize a moving image with a response time of several microseconds (μs), has no viewing angle limit, And it is driven with a low voltage of 5 V to 15 V direct current, so that it is easy to manufacture and design a driving circuit.

Accordingly, the organic electroluminescent device having the above-described advantages has recently been used in various IT devices such as a TV, a monitor, and a mobile phone.

Hereinafter, the basic structure of the organic electroluminescent device will be described in more detail.

BACKGROUND ART An organic electroluminescent device is largely composed of an array element and an organic electroluminescent diode. The array element includes a switching thin film transistor connected to a gate and a data line, and a driving thin film transistor connected to the organic light emitting diode. The organic light emitting diode includes a first electrode connected to the driving thin film transistor, Electrode.

The organic electroluminescent device may include a method of forming a color by forming the organic electroluminescent layer itself as a luminescent material that emits red, green, and blue colors, and a method of forming an organic electroluminescent material that emits white light, A color filter pattern including red, green, and blue pigments is formed corresponding to each pixel region so that white light emitted from the organic light emitting layer that emits white light passes through the red, green, and blue color filter patterns, There is a way.

In the organic electroluminescent device, the switching and driving thin film transistors provided in each pixel region include a semiconductor layer made of polysilicon or an oxide semiconductor material having excellent mobility characteristics.

In particular, a thin film transistor having an oxide semiconductor layer that requires a less complicated process than polysilicon, which requires a relatively complicated process, has been used as a switching and driving device in recent years.

However, the oxide semiconductor layer generates a light leakage current in response to external light or light emitted from the organic light emitting layer, thereby causing a problem of malfunction of the switching and driving thin film transistors.

Therefore, the organic electroluminescent device having the oxide semiconductor layer is required to effectively block the external light or the light emitted from the organic light emitting layer into the switching and driving thin film transistor.

Further, since hydrogen from the insulating layer formed around the oxide semiconductor layer flows into the inside of the oxide semiconductor layer, there arises a problem that the scattering of the threshold voltage of the switching and driving thin film transistor is increased to cause a luminance unevenness phenomenon. .

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to effectively prevent the inflow of light into the switching and driving thin film transistor having an oxide semiconductor layer and to suppress the inflow of hydrogen from the peripheral insulating layer to the oxide semiconductor layer And an object of the present invention is to provide an organic electroluminescent device having the structure of the present invention.

According to an aspect of the present invention, there is provided an organic electroluminescent device comprising: a substrate defining a pixel region having a light emitting region and an element region; A thin film transistor provided in the device region on the substrate; A first protective layer formed on the entire surface of the thin film transistor; A first shielding pattern formed on the first protective layer and connected to the gate electrodes of the thin film transistors corresponding to the thin film transistors; A color filter layer formed on each of the pixel regions on the first passivation layer; A second light shielding pattern made of the same material as the color filter layer corresponding to the upper and side surfaces of the thin film transistors on the first light shielding pattern; A first electrode connected to the drain electrode of the thin film transistor for each pixel region on the color filter layer; An organic light emitting layer formed on the first electrode; And a second electrode formed on the organic light emitting layer.

At this time, the thin film transistor includes an etch stopper having a gate electrode, a gate insulating film, an island-shaped oxide semiconductor layer, and a semiconductor layer contact hole exposing both sides of the oxide semiconductor layer from the substrate, And a source electrode and a drain electrode which are in contact with the oxide semiconductor layer through the contact hole and are spaced apart from each other.

The thin film transistor is a driving thin film transistor and the switching thin film transistor, and the thin film transistor connected to the first electrode is the driving thin film transistor.

The substrate further includes a gate wiring connected to a gate electrode of the switching thin film transistor, and a data wiring connected to a source electrode of the switching thin film transistor. The power wiring connected to the source electrode of the driving thin film transistor is further provided.

The color filter layer may be formed by periodically repeating color filter patterns of red, green, and blue for each pixel region, or may be formed by periodically repeating a white color filter pattern in addition to red, .

The second light-shielding pattern is formed of at least one color filter pattern of the red, green, and blue color filter patterns, and the second light-shielding pattern is a color filter pattern of two colors of the red, Layer structure, or the red, green, and blue color filter patterns are overlapped with each other to form a triple-layer structure.

The organic light emitting layer emits white light or emits red light, green light, and blue light. When the organic light emitting layer emits red light, green light, and blue light, the color of the color filter pattern formed under the organic light emitting layer And the organic light emitting layer is arranged to emit light.

Further, a second protective layer made of an inorganic insulating material is further formed between the color filter layer and the first electrode, the overcoat layer having a flat surface over the second light-shielding pattern. At this time, Layer and the first protective layer are provided with a drain contact hole for exposing the drain electrode of the thin film transistor, and the first electrode and the drain electrode are in contact with each other through the drain contact hole.

The first light-shielding pattern is formed of an opaque metal material.

In addition, banks are formed at the boundaries of the pixel regions in the form of surrounding the organic light emitting layer.

A method of manufacturing an organic electroluminescent device according to a first embodiment of the present invention includes: forming a thin film transistor in the device region on a substrate having a pixel region defined by a light emitting region and a device region; Forming a first protective layer over the entire surface of the thin film transistor; Forming a first light blocking pattern connected to the gate electrodes of the thin film transistors corresponding to the thin film transistors on the first protective layer; Forming a color filter layer on each of the pixel regions on the first protective layer and simultaneously forming a second light shielding pattern on the first light shielding pattern with the same material as the color filter layer corresponding to the upper and side surfaces of the thin film transistor, Wow; Forming a first electrode connected to a drain electrode of the thin film transistor on the color filter layer for each pixel region; Forming an organic light emitting layer on the first electrode; And forming a second electrode over the organic light emitting layer.

At this time, the step of forming the thin film transistor may include: forming a gate electrode in the device region on the substrate; Forming a gate insulating film over the gate electrode; Forming an island-shaped oxide semiconductor layer on the gate insulating film in correspondence with the gate electrode; Forming an etch stopper having a semiconductor layer contact hole exposing both sides of the oxide semiconductor layer on the oxide semiconductor layer; And forming a source electrode and a drain electrode which are in contact with the oxide semiconductor layer through the semiconductor layer contact hole over the etch stopper and are spaced apart from each other.

The thin film transistor includes a driving thin film transistor and a switching thin film transistor in each element region, and the drain electrode and the first electrode of the driving thin film transistor are connected to each other.

The step of forming the gate electrode may include forming a gate wiring connected to the gate electrode of the switching thin film transistor, and the step of forming the source electrode and the drain electrode may include forming a source electrode and a drain electrode of the switching thin film transistor, Forming a connected data line and a power line spaced apart from the data line.

Meanwhile, the step of forming the color filter layer and the second light blocking pattern may include repeating a process of applying red, green, blue or red, green, blue and white color resists on the first protective layer and patterning them respectively Green, and blue color filter patterns or color filter patterns of red, green, blue, and white in a sequential repetition pattern corresponding to the light emitting region of each pixel region, and at the same time, the red, And one or more of the color filter patterns are formed so as to overlap with each other.

Forming an overcoat layer having a flat surface over the color filter layer and the second light shielding pattern before forming the first electrode; Forming a second protective layer of an inorganic insulating material over the overcoat layer; And patterning the second passivation layer, the overcoat layer, and the first passivation layer to form a drain contact hole exposing the drain electrode.

The forming of the first passivation layer over the thin film transistor may include forming a gate contact hole exposing the gate electrode by patterning the first passivation layer and the etch stopper and the gate insulating layer.

The organic electroluminescent display device further includes a step of forming a bank at the boundary of each pixel region, overlapping the edge of the first electrode before forming the organic light emitting layer.

Meanwhile, an organic electroluminescent device according to a second embodiment of the present invention includes: a substrate having a pixel region defined by a light emitting region and an element region; A gate electrode provided in the element region on the substrate; A first gate insulating layer formed on the entire surface of the substrate over the gate electrode; A barrier layer formed on the entire surface of the substrate over the first gate insulating film and made of IGZO (Indium Gallium Zinc Oxide); A second gate insulating layer formed on the entire surface of the substrate over the barrier layer; An oxide semiconductor layer formed on the second gate insulating film in correspondence with the gate electrode; An etch stopper having a semiconductor layer contact hole exposing the oxide semiconductor layer on the oxide semiconductor layer; And source and drain electrodes spaced apart from each other above the etch stopper and formed in contact with the oxide semiconductor layer through the semiconductor layer contact holes, respectively.

At this time, a first protective layer formed on the entire surface of the source and drain electrodes; A first shielding pattern formed on the first passivation layer and connected to the gate electrode; A color filter layer formed on each of the pixel regions on the first passivation layer; A second light-shielding pattern made of the same material as the color filter layer corresponding to an upper portion of the source and drain electrodes over the first light-shielding pattern; A first electrode connected to the drain electrode for each pixel region on the color filter layer; An organic light emitting layer formed on the first electrode; And a second electrode formed on the organic light emitting layer.

In addition, the first gate insulating film is made of silicon nitride (SiNx), and the second gate insulating film is made of silicon oxide (SiO ₂ ).

The barrier layer is characterized by a ratio of indium: gallium: zinc: oxygen of 1: 1: 1: 5 to 1: 1: 1: 10. The oxide semiconductor layer may include at least one of indium gallium zinc oxide (IGZO) (Zinc Tin Oxide), and ZIO (Zinc Indium Oxide). In the IGZO, ZTO, and ZIO, each of the contents other than oxygen has the same ratio of 1, 3. ≪ / RTI >

A method of fabricating an organic electroluminescent device according to a second embodiment of the present invention includes: forming a gate electrode in the device region on a substrate having a pixel region defined by a light emitting region and a device region; Forming a first gate insulating film on the entire surface of the substrate over the gate electrode; Forming a barrier layer made of IGZO (Indium Gallium Zinc Oxide) on the entire surface of the substrate over the first gate insulating film; Forming a second gate insulating film on the entire surface of the substrate over the barrier layer; Forming an oxide semiconductor layer on the second gate insulating film in correspondence with the gate electrode; Forming an etch stopper having a semiconductor layer contact hole exposing the oxide semiconductor layer over the oxide semiconductor layer; And forming source and drain electrodes spaced apart from each other above the etch stopper and in contact with the oxide semiconductor layer through the semiconductor layer contact holes, respectively.

Forming a first passivation layer over the source and drain electrodes; Forming a first light shielding pattern connected to the gate electrode on the first passivation layer; Forming a color filter layer on each of the pixel regions on the first protective layer and forming a second light shielding pattern made of the same material as the color filter layer corresponding to the upper portion of the source and drain electrodes over the first light shielding pattern ; Forming a first electrode connected to the drain electrode for each pixel region on the color filter layer; Forming an organic light emitting layer on the first electrode; And forming a second electrode over the organic light emitting layer.

The first gate insulating layer is formed by depositing silicon nitride (SiNx), and the second gate insulating layer is formed by depositing silicon oxide (SiO ₂ ).

The barrier layer is formed such that the ratio of indium: gallium: zinc: oxygen is 1: 1: 1: 5 to 1: 1: 1: 10.

After the first gate insulating film, the second gate insulating film, and the etch stopper are formed, a heat treatment process is performed for 30 minutes to 60 minutes in a temperature atmosphere of 300 ° C to 500 ° C for dehydrogenation.

After forming the first gate insulating film, the second gate insulating film, and the etch stopper, an extreme ultraviolet ray having a wavelength band of 100 to 400 nm is formed on each of the first gate insulating film, the second gate insulating film, and the etch stopper , And the step of irradiating the extreme ultraviolet ray is performed for 1 to 10 minutes.

A method of fabricating an organic electroluminescent device according to a third embodiment of the present invention includes: forming a gate electrode in the device region on a substrate having a pixel region defined by a light emitting region and a device region; Forming a gate insulating film of a double layer structure consisting of a single layer or a different material to the gate electrode over the deposited inorganic insulating material is silicon oxide (SiO ₂₎ or silicon nitride (SiNx) on the front substrate; Irradiating the gate insulating film with extreme ultraviolet light having a wavelength band of 100 to 400 nm; Forming an oxide semiconductor layer on the gate insulating film in correspondence to the gate electrode; Forming an etch stopper having a semiconductor layer contact hole exposing the oxide semiconductor layer over the oxide semiconductor layer; Irradiating the etch stopper with extreme ultraviolet light having a wavelength band of 100 to 400 nm; And forming source and drain electrodes spaced apart from each other above the etch stopper and in contact with the oxide semiconductor layer through the semiconductor layer contact holes, respectively.

At this time, the step of irradiating the etch stopper with extreme ultraviolet rays is performed before or after the semiconductor layer contact hole is formed in the etch stopper.

The irradiation with the extreme ultraviolet rays is performed for 1 to 10 minutes. At this time, the hydrogen bonded to silicon is desorbed from the inside of each of the gate insulating film and the etch stopper by the extreme ultraviolet ray irradiation, And reacts with ozone or oxygen radicals generated by the oxygen radicals to form OH bonds.

Forming a first passivation layer over the source and drain electrodes; Forming a first light shielding pattern connected to the gate electrode on the first passivation layer; Forming a color filter layer on each of the pixel regions on the first protective layer and forming a second light shielding pattern made of the same material as the color filter layer corresponding to the upper portion of the source and drain electrodes over the first light shielding pattern ; Forming a first electrode connected to the drain electrode for each pixel region on the color filter layer; Forming an organic light emitting layer on the first electrode; And forming a second electrode over the organic light emitting layer.

The organic light emitting device according to the first embodiment of the present invention includes the first light-shielding pattern on the top of each thin film transistor, and the second light-shielding pattern is formed on the top of the first light- The external light can be originally restrained from flowing into the oxide semiconductor layer included in the switching and driving thin film transistor and the light incident on the side through the organic light emitting layer can also be prevented from being introduced, There is an effect of suppressing the generation of light leakage current of the driving thin film transistor and preventing erroneous operation.

In the case of the first substrate of the organic electroluminescent device according to the second embodiment of the present invention, the barrier layer of the IGZO material having a relatively large oxygen content is provided so that the first and second gate insulating films, The amount of hydrogen impregnated into the oxide semiconductor layer can be remarkably reduced because it acts as a hydrogen getter for reducing hydrogen permeating into the oxide semiconductor layer by attracting hydrogen generated from the etch stopper.

Therefore, there is an effect of preventing luminance unevenness due to an increase in scattering due to shift of threshold voltage generated by hydrogen penetration into the oxide semiconductor layer.

Furthermore, there is an effect of suppressing the occurrence of stains due to the difference in thermal conductivity between the first and second gate insulating films.

The organic electroluminescent device manufactured by the method of manufacturing an organic electroluminescent device according to the third embodiment of the present invention is characterized in that a gate insulating film made of an inorganic insulating material and an etch stopper are stacked, And the desorbed hydrogen reacts with the ozone or oxygen radical generated by the extreme ultraviolet irradiation to form an OH bond, thereby reducing the amount of hydrogen in itself, thereby effectively preventing hydrogen penetration into the oxide semiconductor layer By improving the surface roughness, there is an effect of ultimately improving driving voltage and threshold voltage dispersion characteristics of the switching device and improving reliability.

Further, the effect of improving the bonding strength with the material layer in contact with the gate insulating film and the etch stopper is improved by the surface modification and cleaning effect of the gate insulating film and the etch stopper.

1 is a circuit diagram of one pixel of a general organic light emitting device.
2 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a first embodiment of the present invention.
FIGS. 3A to 3O are cross-sectional views illustrating steps of manufacturing an organic electroluminescent device according to a first embodiment of the present invention;
4 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a second embodiment of the present invention.
5 is a cross-sectional view of a portion of a display region of a first substrate of an organic electroluminescent device according to a modification of the second embodiment of the present invention.
FIGS. 6A to 6G are cross-sectional views illustrating the steps of manufacturing an organic electroluminescent device according to a second embodiment of the present invention, and schematically show steps of forming a driving and switching thin film transistor (DTr) (not shown) on a first substrate.
FIGS. 7A to 7F are cross-sectional views illustrating steps of manufacturing an organic electroluminescent device according to a third exemplary embodiment of the present invention, and are views illustrating steps of forming a driving and switching thin film transistor on a first substrate. FIG.

Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the drawings.

First, the basic structure and operating characteristics of the organic electroluminescent device will be described in detail with reference to the drawings.

1 is a circuit diagram of one pixel of a general organic light emitting device.

As shown, one pixel of the organic electroluminescent device includes a switching thin film transistor STr, a driving thin film transistor DTr, a storage capacitor StgC, and an organic light emitting diode E.

That is, a gate line GL is formed in a first direction and a data line DL is formed in a second direction intersecting the first direction to define a pixel region P, A power supply line PL for applying a power supply voltage is formed.

A switching thin film transistor STr is formed at the intersection of the data line DL and the gate line GL and a driving thin film transistor DTr electrically connected to the switching thin film transistor STr is formed have.

The first electrode, which is one terminal of the organic electroluminescent diode E, is connected to the drain electrode of the driving thin film transistor DTr, the second electrode of the other electrode is grounded, The electrode is connected to the power supply line PL so that the power supply line PL transfers the power supply voltage to the organic light emitting diode E.

A storage capacitor StgC is formed between the gate electrode and the source electrode of the driving thin film transistor DTr.

Therefore, when a signal is applied through the gate line GL, the switching thin film transistor STr is turned on and the signal of the data line DL is transmitted to the gate electrode of the driving thin film transistor DTr, The thin film transistor DTr is turned on so that light is output through the organic light emitting diode E.

At this time, when the driving thin film transistor DTr is turned on, a level of a current flowing from the power supply line PL to the organic light emitting diode E is determined. Accordingly, the organic light emitting diode E The storage capacitor StgC is capable of maintaining a constant gate voltage of the driving thin film transistor DTr when the switching thin film transistor STr is turned off The level of the current flowing through the organic light emitting diode E can be kept constant until the next frame even if the switching thin film transistor STr is turned off.

Hereinafter, the structure of the organic electroluminescent device according to the embodiment of the present invention for displaying an image by the above-described driving will be described.

2 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to an embodiment of the present invention. In this case, for convenience of description, a region where a switching thin film transistor (not shown) and a driving thin film transistor DTr are to be formed is referred to as a driving region DA, and a region where the organic light emitting layer 163 is formed, Area (EA).

As shown in the figure, the organic light emitting diode 101 according to the embodiment of the present invention includes a switching and driving thin film transistor (not shown, DTr), an organic light emitting diode (E), and red, A first substrate 110 having a color filter layer 145 formed thereon, and a second substrate 170 for encapsulation. At this time, the second substrate 170 may be omitted by being replaced with a film, an inorganic insulating film, an organic insulating film, or the like.

First, the structure of the first substrate 110 including the switching and driving thin film transistors (not shown) and the organic light emitting diodes E will be described.

A gate line (not shown) and a data line (not shown) are formed on the first substrate 110, the gate line (not shown) or the gate line Power wiring (not shown) is formed in parallel with the data wiring (not shown).

A switching thin film transistor (not shown) is connected to the gate line (not shown) and the data line (not shown) in the driving region DA of each of the plurality of pixel regions P, (Not shown) and a power supply line (not shown), and a driving thin film transistor DTr are formed.

The driving thin film transistor DTr includes an etch stopper 122 having a gate electrode 115, a gate insulating layer 118, an oxide semiconductor layer 120, a semiconductor layer contact hole 123, And a source electrode 133 and a drain electrode 136 which are separated from each other on the etch stopper 122 and are in contact with the oxide semiconductor layer 120 through the semiconductor layer contact hole 122, respectively.

Though not shown in the drawing, the switching thin film transistor (not shown) has the same structure as the driving thin film transistor DTr.

A gate electrode (not shown) of the switching thin film transistor (not shown) is connected to the gate wiring (not shown), and a source electrode (not shown) of the switching thin film transistor And is connected to the data line (not shown).

Further, the switching and driving thin film transistor (not shown, DTr) over an inorganic insulating material for the silicon oxide (SiO ₂₎ g., Silicon nitride (SiNx), aluminum oxide (Al ₂ O _3), hafnium oxide (HfO ₂₎ of A first protective layer 140 made of any one of them is formed.

As a characteristic feature of the organic electroluminescent device 101 according to the embodiment of the present invention, the switching and driving thin film transistor (not shown) is formed in each driving region DA above the first passivation layer 140, Shielding pattern 143 connected to the gate electrode 115 through the gate contact hole gch and the gate electrode 115 forming the lowermost portion of each thin-film transistor (not shown) (DTr) .

The first light-shielding pattern 143 formed on top of each of the switching and driving thin film transistors (not shown) (DTr) is connected to the gate electrode 115 to serve as a second gate electrode, And the oxide semiconductor layer 120 exposed through the gap between the source electrode 133 and the drain electrode 136 is blocked.

Therefore, the organic light emitting diode 101 according to the embodiment of the present invention is provided with the first light shielding pattern 143 so that light emitted from the external light or the organic light emitting layer 163 is transmitted to the respective thin film transistors (not shown) (Not shown) by preventing the incident light from being incident on the oxide semiconductor layer 120 of the thin film transistor (not shown), thereby generating a light leakage current.

A color filter layer 145 in which red, green and blue color filter patterns 145a (not shown, not shown) are periodically repeated in correspondence with each pixel region P above the first passivation layer 140, .

In this case, the color filter layer 145 is formed of a transparent material for improving the luminance characteristic in addition to the red, green, and blue color filter patterns 145a (not shown) May be periodically formed along with the red, green, and blue color filter patterns 145a (not shown).

One of the characteristic structures of the present invention is the same material constituting the color filter layer 145 and is formed in the pixel region P not only in the light emitting region but also on the upper portion of the first light- The second light shielding pattern 146 is formed so as to surround the top and sides of the switching and driving thin film transistors (not shown).

That is, each of the switching and driving thin film transistors (not shown) (DTr) has a large stepped portion compared to other regions because the stacked components are larger than the central portion in each pixel region P, The second light shielding pattern 146 made of the same material as the color filter layer 145 on the upper portion of the first and second light emitting diodes Dt1 and DTr is naturally wrapped around the upper and lower sides of the respective switching and driving thin film transistors .

At this time, the second light-shielding pattern 146 formed on the upper and side surfaces of each switching and driving thin film transistor (not shown) comprises a dummy color filter pattern of at least one of red, green, and blue except for white Feature.

That is, the second light-shielding pattern 146 may be a dummy color filter pattern of any one of red, green and blue color filter patterns 145a (not shown) forming the color filter layer 145, Further, color filter patterns of two colors of red, green, and blue color filter patterns 145a (not shown) may be laminated to form a double layer structure, or all red, green, and blue dummy color filter patterns may be laminated Layer structure.

At this time, in order to maximize the effect of light input into each switching and driving thin film transistor (not shown, DTr), the second light shielding pattern 146 provided on the upper and side surfaces of each switching and driving thin film transistor (not shown) More preferably, the dummy color filter patterns 146a and 146b of at least two colors are laminated.

When the dummy color filter patterns 146a and 146b of two colors are stacked, it is preferable that the dummy color filter pattern 146a and the green and blue dummy color filter patterns 146b (not shown) are formed together with the red dummy color filter pattern 146a .

In the case of the color filter pattern, light of a specific wavelength band is absorbed but light of other wavelength band excluding the wavelength band of the self-color is passed, the wavelength range of the red dummy color filter pattern 146a is the widest and the red dummy color filter pattern 146a Since the light of most wavelengths in the visible light region can be absorbed when the dichroic filter pattern of at least two colors is superimposed.

However, it is not necessary to include the red dummy color filter pattern 146a, and even if a dummy color filter pattern of one color is provided, it is not problematic since it has a light-shielding effect for light of a specific wavelength band.

In the drawing, the second light-shielding pattern 146 has a double-layer structure including red and green dummy color filter filter patterns 146a and 146b.

The second shielding pattern 146 made of at least one dummy color filter pattern among the red, green, and blue dummy color filter patterns 146a and 146b (not shown) is formed on the upper side of the switching or driving thin film transistor The external light can be originally prevented from being introduced into the oxide semiconductor layer 120 provided in each switching and driving thin film transistor (not shown) and the organic light emitting layer 163 Light incident on the side surface can also be suppressed from flowing, so that generation of light leakage currents of the respective switching and driving thin film transistors (not shown) can be suppressed and erroneous operation can be prevented.

Next, an overcoat layer 150 made of an organic insulating material and having a planarized surface is formed on the color filter layer 145 and the second light-shielding pattern 146. An example of an inorganic insulating material is formed on the overcoat layer 150 A second protective layer 153 made of any one of silicon oxide (SiO ₂ ), silicon nitride (SiN x), aluminum oxide (Al ₂ O ₃ ), and hafnium oxide (HfO ₂ ) is formed.

At this time, either the overcoat layer 150 or the second protective layer 153 may be omitted. The overcoat layer 150 is formed for protecting the color filter layer 145 by removing a step generated by the color filter layer 145 and the second protective layer 153 is formed of a conductive material to be formed later The overcoat layer 150 is formed between the first electrode 157 and the overcoat layer 150 to compensate for the weak bonding force between the first electrode 157 and the overcoat layer 150.

A first electrode 157 is formed on the second passivation layer 153 with respect to the light emitting region EA of each pixel region P. [ The first electrode 157 is in contact with the drain electrode 136 of the driving thin film transistor DTr provided in the driving region DA through the drain contact hole 154. The drain contact hole 154 is formed on the second passivation layer 153, the overcoat layer 150, and the first passivation layer 140 to expose the drain electrode 136.

This is because the color filter layer 145 is selectively formed for each pixel region P and is not formed in the region where the drain contact hole 154 is formed.

The first electrode 157 is made of a transparent conductive material having a relatively large work function value such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) .

In other words, since the organic electroluminescent device 101 according to the exemplary embodiment of the present invention is configured to emit red, green, and blue through the color filter layer 145, Is preferably made of a transparent material.

A bank 160 is formed on the boundary of each pixel region P so as to overlap the rim of the first electrode 157 in the form of surrounding each pixel region P above the first electrode 157 .

At this time, the bank 160 is formed of a transparent organic insulating material such as polyimide, styrene, methyl mathacrylate, or polytetrafluoroethylene.

An organic light emitting layer 163 is formed on each of the pixel regions P surrounded by the bank 160 so as to emit red, green, or blue light on the first electrode 157 Alternatively, the organic light emitting layer 163 may emit white light in addition to the red, green, and blue light emitting materials.

In the drawing, for example, an organic light emitting layer 163 emitting white light is shown as an example.

In the case where the organic light emitting layer 163 is made of a material emitting red, green and blue light, in each pixel region P, the color of the color filter pattern 145a (not shown, not shown) An organic light emitting layer 163 made of a material emitting light of colors is provided in the light emitting region EA of each pixel region P. When the organic light emitting material is composed of an organic light emitting material that emits white, Emitting layer 163 for emitting white light is provided in each light-emitting region EA irrespective of the color of the light-emitting layer (not shown).

A second electrode 167 is formed on the organic light emitting layer 163 and is formed of an opaque metal material having a low work function corresponding to the entire display region, and serves as a cathode electrode.

At this time, the opaque metal material having a small work function value is, for example, one of aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au) and aluminum magnesium alloy Or two or more materials.

 At this time, the first and second electrodes 157 and 167 and the organic light emitting layer 163 formed therebetween form an organic light emitting diode (E).

Although not shown, a multilayer structure (not shown) may be formed between the first electrode 157 and the organic emission layer 163 and between the organic emission layer 163 and the second electrode 167 to improve the emission efficiency of the organic emission layer 163, A first light emission compensation layer (not shown) and a second emission compensation layer (not shown) may be further formed.

At this time, the first emission compensation layer (not shown) of a multilayer is sequentially stacked from the first electrode 157 to the top, and may be a hole injection layer and a hole transporting layer, The second emission compensation layer (not shown) may be formed of an electron transporting layer and an electron injection layer sequentially from the organic emission layer 163.

At this time, the first emission compensation layer (not shown) may be formed of any one of a hole injection layer (not shown) and a hole transporting layer (not shown) 2 emission compensation layer (not shown) may be formed of any one of the electron transporting layer (not shown) and the electron injection layer (not shown).

The first emission compensation layer (not shown) and the second emission compensation layer (not shown) of the multi-layer structure may be formed on the entire surface of the display region in a plate form, .

Meanwhile, a second substrate 170 for encapsulation is provided corresponding to the first substrate 110 of the organic electroluminescent device 101 according to the embodiment of the present invention.

The first substrate 110 and the second substrate 170 are provided with an adhesive agent (not shown) made of a sealant or a frit along an edge thereof. The adhesive agent (not shown) And the second substrate 170 is adhered to maintain the panel state.

At this time, a vacuum state is formed between the first substrate 110 and the second substrate 170 which are spaced apart from each other, or an inert gas atmosphere may be obtained by being filled with an inert gas.

The second substrate 170 for the encapsulation may be made of plastic having a flexible property, or may be made of a glass substrate.

Meanwhile, although the organic EL device 101 according to the above-described embodiment includes the second substrate 170 for encapsulation in a form spaced apart from the first substrate 110, The second substrate 170 may be configured to contact the second electrode 167 provided on the uppermost layer of the first substrate 110 in the form of a film including an adhesive layer.

As another modification according to the embodiment of the present invention, an organic insulating film (not shown) or an inorganic insulating film (not shown) is further provided on the second electrode 167 to prevent moisture and oxygen penetration The organic insulating film (not shown) or the inorganic insulating film 162 may be used as an encapsulation film (not shown). In this case, the second substrate 170 may be omitted.

Hereinafter, a method of manufacturing an organic electroluminescent device according to an embodiment of the present invention having the above-described structure will be described.

3A to 3O are cross-sectional views illustrating an organic electroluminescent device according to an exemplary embodiment of the present invention. For convenience of description, the regions where the switching and driving thin film transistors are to be formed are collectively defined as driving regions in each pixel region P, the region where the organic light emitting layer 163 is formed is defined as the light emitting region EA , Switching and driving thin film transistors have the same lamination structure, and are hereinafter referred to as thin film transistors (DTr) without discrimination between switching and driving thin film transistors.

First, as shown in FIG. 3A, a low resistance metal material such as copper (Cu), a copper alloy (AlNd), aluminum (Al), aluminum A first metal layer (not shown) having a single layer or a multi-layer structure of more than two layers is formed by depositing one or two or more materials selected from alloys (AlNd), molybdenum (Mo) and moly titanium (MoTi).

Thereafter, the first metal layer (not shown) is subjected to a series of unit processes of applying photoresist, exposure using an exposure mask, development of exposed photoresist, etching of the first metal layer (not shown) (Not shown) extending in one direction and a gate electrode 115 is formed in the driving region DA at the same time.

At this time, a gate electrode (not shown) and a gate wiring (not shown) constituting a switching thin film transistor (not shown) are formed so as to be connected to each other.

Then, an inorganic insulating material such as silicon oxide (SiO ₂ ), silicon nitride (SiN x), aluminum oxide (Al ₂ O ₃ ), hafnium oxide (HfO ₂ ), or the like is formed on the gate wiring (not shown) The gate insulating film 118 is formed.

An oxide semiconductor material such as IGZO (Indium Gallium Zinc Oxide), ZTO (Zinc Tin Oxide), or ZIO (Zinc Indium Oxide) is deposited on the gate insulating layer 118, And an oxide semiconductor material layer (not shown) is formed on the gate electrode 115. The oxide semiconductor material layer 120 is formed on the gate electrode 115 in each driving region DA by patterning the oxide semiconductor material layer.

Next, the oxide semiconductor layer 120 over the inorganic insulating material, for example silicon oxide (SiO _2), silicon nitride (SiNx), aluminum (Al ₂ O _3), hafnium oxide as shown in Figure 3c (HfO ₂ ) are deposited to form an etch stopper 122. A masking process is performed on the etch stopper 122 to pattern the semiconductor layer contact holes 123 (123a, 123b) to expose both sides of the respective oxide semiconductor layers 120 ).

Next, as shown in FIG. 3D, a low resistance metal material such as copper (Cu), a copper alloy (AlNd), aluminum (Al), or the like is formed on the etch stopper 122 provided with the semiconductor layer contact hole 123, (Not shown) having a multilayer structure or a single layer or a multilayer structure by depositing one or more materials selected from aluminum nitride (AlNd), molybdenum (Mo), and molybdenum (MoTi).

A data line (not shown) is formed on the etch stopper 122 to define a pixel region P intersecting the gate line (not shown) by patterning the second metal layer (not shown) through a mask process And at the same time, a source electrode 133 and a drain electrode 136, which are spaced apart from each other, are formed in the respective driving regions DA.

At this time, a source electrode (not shown) of the source electrode 133 forming a switching thin film transistor (not shown) is formed to be connected to the data line (not shown).

The source electrode 133 and the drain electrode 136 of the driving region DA are formed to contact the oxide semiconductor layer 120 through the semiconductor layer contact hole 123, respectively.

The gate electrode 115, the gate insulating film 118, the oxide semiconductor layer 120, the etch stopper 122, the source and drain electrodes 133 and 136, which are sequentially stacked in each driving region DA, Film transistor Tr.

Next, as shown in FIG. 3E, an inorganic insulating material such as silicon oxide (SiO ₂ ), silicon nitride (SiNx), oxidized silicon nitride (SiNx), or the like is formed over the data wiring (not shown) and the source and drain electrodes 133 and 136 The first passivation layer 140 is formed by depositing any one of aluminum (Al ₂ O ₃ ) and hafnium oxide (HfO ₂ ).

The mask process is performed to pattern the first passivation layer 140 and the etch stopper 122 and the gate insulating layer 118 located under the first passivation layer 140 to expose the gate electrodes 115 gch).

3F, an opaque metal material such as copper (Cu), a copper alloy (AlNd), aluminum (Al), or the like is formed on the first passivation layer 140 provided with the gate contact hole gch. A third metal layer (not shown) is formed by depositing any one of aluminum alloy (AlNd), molybdenum (Mo), and moly titanium (MoTi) A first light shielding pattern 143 is formed in contact with the gate electrode 115 through the gate contact hole gch corresponding to each thin film transistor DTr.

The first light-shielding pattern 143 configured in this manner functions to block light incident on the upper portion of the thin film transistor DTr and to serve as a second gate electrode.

Next, as shown in FIGS. 3G and 3H, the red, blue, or red, green, blue and white color resists are coated on the first light shielding pattern 143 and the first protective layer 140, Green and blue color filter patterns 145a (not shown, not shown) or red, green and blue color filter patterns corresponding to the light emitting area EA of each pixel region P by repeating the process of applying and patterning the red, And a color filter pattern 145a (not shown, not shown, not shown) of white are sequentially and repeatedly formed.

At the same time, in each of the driving regions DA, a color filter pattern of any one of the red, green, and blue color filter patterns 145a (not shown) wraps around the upper and side surfaces of each thin film transistor DTr And the second light-shielding pattern 146 is formed.

The dummy color filter patterns 146a and 146b of the respective colors are selectively laminated in the driving area DA during the process of forming the color filter layer 145 so that two or more dummy color filter patterns Shielding pattern 146 may be formed as a double-layered or triple-layered structure including the first light-shielding patterns 146a and 146b.

In the drawing, the second light blocking pattern 146 has a double layer structure of a red color filter pattern 146a and a green color filter pattern 146b.

Next, as shown in FIG. 3I, an overcoat layer 150 having a flat surface on the entire display area by applying an organic insulating material, for example, photoacrylic over the color filter layer 145 and the second light shielding pattern 146, .

And as shown in Figure 3j, the overcoat layer 150 over the inorganic insulating material, for example silicon oxide (SiO _2), silicon nitride (SiNx), aluminum oxide (Al ₂ O _3), hafnium oxide (HfO ₂₎ The second protective layer 153 is formed.

Thereafter, the second passivation layer 153 and the overcoat layer 150 and the first passivation layer 140 located under the second passivation layer 153 are patterned through a mask process to form the thin film transistor The drain contact hole 154 exposing the drain electrode 136 of the drain electrode DTr is formed.

At this time, the thin film transistor DTr provided with the drain contact hole 154 becomes a driving thin film transistor DTr, and is omitted in the case of a switching thin film transistor (not shown).

Either one of the overcoat layer 150 and the second passivation layer 153 may be omitted.

  Next, as shown in FIG. 3K, a transparent conductive material having a relatively large work function value such as indium-tin-oxide (ITO) or the like is formed on the second passivation layer 153 having the drain contact hole 154 (Not shown) is formed by depositing indium-zinc-oxide (IZO), and the mask process is performed to pattern the transparent conductive material layer Thereby forming the first electrode 157 which is in contact with the drain electrode 136 of the transistor DTr (driving thin film transistor).

 Next, as shown in FIG. 31, an organic insulating material, for example, poly (polyimide) is deposited on the entire surface of the protective layer 140 exposed between the first electrode 157 and the first electrode 157 adjacent to the first electrode 157, (P) is applied to the boundary of each pixel region (P) by applying any one of the first electrode, the second electrode, the first electrode, the second electrode, the first electrode, the second electrode, the first electrode, the second electrode, The banks 160 overlapping the edges of the banks 157 are formed.

 Next, as shown in FIG. 3M, a solid-state organic light emitting material is thermally deposited on the bank 160 and the first electrode 157 using a shadow mask (not shown), or an ink jet apparatus ) Or a nozzle coating unit (not shown) to eject or drop the liquid organic light emitting material corresponding to each pixel region P surrounded by the bank 160, an organic light emitting layer (not shown) is formed on the first electrode 157 163).

In the drawing, the organic light emitting layer 163 having a single layer structure of the first electrode 157 is shown as an example. However, the organic light emitting layer 163 may have a multi-layer structure for improving light emitting efficiency.

In this case, the same method as that for forming the single-layer organic light-emitting layer 163 is performed, or a method for performing front-side deposition in the display region is performed to form a hole injection layer (not shown) of the organic light- An electron transporting layer (not shown) and an electron injection layer (not shown) are formed on the organic light emitting layer 163, and a hole transporting layer (not shown) (Not shown) may be selectively formed.

3n, a metal material having a relatively low work function value such as aluminum (Al), an aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au), and an aluminum magnesium alloy (AlMg) are deposited on the entire surface of the display region to form the second electrode 167. Thus, the first substrate for an organic electroluminescent device 110).

At this time, the first electrode 157, the organic light emitting layer 163, and the second electrode 167, which are sequentially stacked in each pixel region P by the above-described method, constitute the organic light emitting diode E.

Next, as shown in FIG. 30, the second substrate 170 is opposed to the first substrate 110 in order to encapsulate the organic light emitting diode E, and the first substrate 110 A face seal (not shown) made of a frit, an organic insulating material, or a polymer material having a transparent and adhesive property is formed between the first substrate 110 and the second substrate 170 on the front surface of the first substrate 110 The first substrate 110 and the second substrate 170 are attached to each other in a coated state or a seal pattern (not shown) is formed along the edge of the first substrate 110 in a vacuum or inert gas atmosphere The first and second substrates 110 and 170 are bonded together to complete the organic light emitting device 101 according to the embodiment of the present invention.

Alternatively, an inorganic insulating material or an organic insulating material may be deposited or coated on the second electrode 167 of the first substrate 110, or an adhesive layer (not shown) may be resumed to attach a film (not shown) When used as an encapsulation film (not shown), the second substrate 170 may be omitted.

FIG. 4 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a second embodiment of the present invention, showing a driving and switching thin film transistor before forming an organic light emitting diode, Sectional structure in a state in which the substrate is formed. Here, for convenience of description, a region where a switching thin film transistor (not shown) and a driving thin film transistor DTr are formed in each pixel region P is defined as a driving region DA.

The first substrate 210 of the organic electroluminescent device according to the second embodiment of the present invention is focused on a structure for suppressing hydrogen penetration as the oxide semiconductor layer 220. The driving and switching thin film transistors DTr, (Not shown) and a method of forming the same, only the state in which a driving and switching thin film transistor (DTr, not shown) is formed is shown in the drawing.

In this case, in the first substrate 210 of the organic light emitting device according to the second embodiment of the present invention, the elements formed on the driving and switching thin film transistor DTr (not shown) (110 of FIG. 2) according to the first embodiment of the present invention, and the first and second organic electroluminescent devices of the present invention, It will be obvious that a secondary light-shielding pattern (143, 146 in Fig. 2) may be further formed.

A switching and driving thin film transistor (not shown) including a barrier layer 219 and first and second gate insulating films 218a and 218b is formed on the first substrate 210 of the organic electroluminescent device according to the second embodiment of the present invention, And an organic light emitting diode (not shown) connected to one electrode of the driving thin film transistor DTr, although not shown in the drawing, are provided.

The structure of the first substrate 210 will be described in more detail.

A gate line (not shown) and a data line (not shown) are formed in the display region of the first substrate 210 so as to intersect with each other and define the pixel region P. The gate line Power wiring (not shown) is formed in parallel with the wiring (not shown).

A switching thin film transistor (not shown) is connected to the gate line (not shown) and the data line (not shown) in the driving region DA of each of the plurality of pixel regions P, (Not shown) and a power supply line (not shown), and a driving thin film transistor DTr are formed.

The driving thin film transistor DTr includes a gate electrode 215, a first gate insulating film 218a, a barrier layer 219, a second gate insulating film 218b, an oxide semiconductor layer 220, A source electrode 233 which is in contact with the oxide semiconductor layer 220 through the semiconductor layer contact hole 222 and is spaced apart from each other on the etch stopper 222; And a drain electrode 236. The drain electrode 236 and the drain electrode 236 are connected to each other.

At this time, the most characteristic feature of the first substrate 210 of the organic electroluminescent device according to the second embodiment of the present invention is that the gate insulating film 218 is separated into the first and second gate insulating films 218a and 218b And the barrier layer 219 is formed between the first and second gate insulating films 218a and 218b.

Moreover, the first gate insulating film (218a) is made by a silicon nitride (SiNx) an inorganic insulating material, the second gate insulating film (218b) is made up of a silicon oxide (SiO ₂₎ an inorganic insulating material, said barrier layer ( 219) is further characterized by being made of indium-gallium-zinc-oxide (IGZO, hereinafter referred to as IGZO) having thermal conductivity similar to that of silicon oxide (SiO ₂ ). At this time, it is preferable that the oxygen (O 2) content is formed so as to have a large content with respect to the IGZO at the time of forming the oxide semiconductor layer 220 when the barrier layer 219 made of IGZO is formed.

That is, the barrier layer 219 made of IGZO preferably has a content ratio of indium: gallium: zinc: oxygen of 1: 1: 1: 5 to 1: 1: 1: 10. At this time, when the IGZO serves as the oxide semiconductor layer 220, the content ratio of indium: gallium: zinc: oxygen is about 1: 1: 1: 1 to 1: 1: 1: 3, In order to achieve this, the minimum oxygen content ratio is at least 5 times higher than that of other indium, gallium and zinc.

Therefore, the barrier layer 219 has an indium-gallium: zinc: oxygen content ratio of 1: 1: 1: 5 to 1: 1: 1 as described above so as to have a non-conductive property and further serve as a hydrogen getter. 1:10.

When the content of oxygen (O2) increases in the IGZO which is an oxide semiconductor material, the dielectric constant characteristics are improved and at the same time, an insulating film made of an inorganic insulating material (for example, the gate insulating film 218, the etch stopper 222, This is because the tendency to accept hydrogen coming from the protective layer (not shown) becomes strong.

Therefore, the barrier layer 219 made of IGZO having a non-volatile nature due to an increased oxygen content absorbs hydrogen from the periphery of the gate insulating film 218 located at the lower and upper parts of the barrier layer 219, And acts as a hydrogen getter to suppress hydrogen penetrating into the layer 220.

A barrier layer 219 made of indium-gallium-zinc-oxide (IGZO) is formed between the first and second gate insulating films 218a and 218b so that the gate insulating film 218 has a separated double- The supply of hydrogen to the oxide semiconductor layer 220 from the gate insulating layer 218 is suppressed so that the driving and the switching thin film transistor DTr (not shown) due to the supply of hydrogen to the oxide semiconductor layer 220, It is possible to suppress an increase in the threshold voltage distribution of the driving thin film transistor (DTr, not shown), and further suppress the deterioration of the luminance characteristic caused by the increase in the threshold voltage distribution of the driving thin film transistor (DTr, not shown).

The barrier layer 219 substantially absorbs hydrogen from the insulating film formed at the time of manufacturing the first substrate 210, particularly the gate insulating film 218 and the etch stopper 222, The permeation of hydrogen is suppressed, which will be described in detail later in the production method.

Though not shown in the drawing, the switching thin film transistor (not shown) also has the same structure as the driving thin film transistor DTr. A gate electrode (not shown) of the switching thin film transistor (not shown) is connected to the gate wiring (not shown), and a source electrode (not shown) of the switching thin film transistor City).

(Not shown), an inorganic insulating material such as silicon oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), hafnium oxide (HfO ₂ ), or the like is formed on the switching and driving thin film transistor ₂ , and a bank (not shown) and an organic light emitting diode (not shown) are further provided on the first passivation layer (not shown).

5 (a cross-sectional view of a portion of the display region of the first substrate of the organic electroluminescent device according to the modification of the second embodiment of the present invention) in the driving region DA above the first passivation layer 140 The first and second light shielding patterns 243 and 246 may be further formed as shown in the first embodiment of the present invention and the color filter layer 245 and the overcoat layer 250 may be further formed.

In the first substrate 210 for an organic electroluminescent device according to the second embodiment of the present invention, the driving and switching thin film transistor DTr (not shown) on the upper portion of the driving and switching thin film transistor DTr (not shown) The organic electroluminescent device according to the first embodiment of the present invention may have the same structure as that formed on the first substrate (not shown) of a general organic electroluminescent device, (See Fig. 5) of the first substrate of the device.

Referring to FIG. 4, a second substrate (not shown) serving as an encapsulation is further provided corresponding to the first substrate 210 having such a configuration. Thus, the organic electroluminescence device according to the second embodiment of the present invention Thereby forming a light emitting device.

At this time, the second substrate (not shown) may be omitted by being replaced with a film, an inorganic insulating film, an organic insulating film, or the like.

FIGS. 6A to 6G are cross-sectional views illustrating steps of manufacturing an organic electroluminescent device according to a second embodiment of the present invention, and are views illustrating a step of forming a driving and switching thin film transistor (DTr) (not shown) on a first substrate.

6A, a low-resistance metal material such as copper (Cu), a copper alloy (AlNd), and a copper alloy is formed on a first substrate 210 made of a transparent insulating material such as a glass substrate or a flexible plastic substrate. A first metal layer (not shown) having a multilayer structure or a single layer or a multilayer structure is formed by depositing one or more materials selected from aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo) and moly titanium (MoTi) A gate line (not shown) extending in one direction is formed by patterning the gate electrode 215 in the driving region DA while a mask process is performed thereon.

6B, the first substrate 210 on which the gate wiring (not shown) and the gate electrode 215 are formed is placed in a chamber 293 of a chemical vapor deposition apparatus (hereinafter referred to as a CVD apparatus) And a reactive gas such as SiH ₄ and NH ₃ is supplied at a constant flow rate and a plasma is formed to form a first gate insulating film 218a made of SiNx through chemical vapor deposition.

The first gate insulating film 218a made of SiNx is formed using SiH ₄ and NH ₃ containing hydrogen as a reactive gas, and contains a large amount of hydrogen therein.

Therefore, when the first gate insulating film 218a is exposed to a high-temperature atmosphere, the hydrogen contained in the first gate insulating film 218a naturally flows out to the outside, and this hydrogen typically penetrates into the oxide semiconductor layer 220 (FIG. 6H).

Therefore, as shown in FIG. 6C, the first substrate 210 on which the first gate insulating film 218a is formed is placed in the chamber 295 of the sputtering apparatus, and then the sputtering is performed A barrier layer 219 is formed on the entire surface of the first substrate 210 by depositing IGZO on the first gate insulating film 218a.

At this time, the barrier layer 219 must have a ratio of oxygen: gallium: zinc: oxygen of 1: 1: 1: 5: 1 : 1: 1: 10.

Such a barrier layer 219 made of IGZO material because of the thermal conductivity similar to the silicon oxide (SiO ₂₎ forming a second gate insulating film (218b in Fig. 6d) to be formed later silicon oxide (SiO ₂₎ a second material There is an effect of suppressing the stain caused by the difference in thermal conductivity in the portion overlapping the heating line in the chamber (293 in FIG. 6D) of the CVD apparatus in the process of forming the gate insulating film (218b in FIG. 6D).

That is, when silicon nitride (SiN x) is deposited without using the barrier layer 219 and then silicon oxide (SiO ₂ ) is deposited, the difference in thermal conductivity of the silicon oxide (SiO ₂ ) and silicon nitride (SiNx) ₂ ) formed a spot at a portion overlapping the heating line (not shown) in the chamber (293 in FIG. 6D).

However, in the second embodiment in accordance with the organic light emitting a first gate insulating film (218a) and the silicon oxide in the silicon nitride (SiNx) materials different in the heat conductivity by the method of the element (SiO ₂₎ materials of the present invention The first gate insulating film 218a made of silicon nitride (SiNx) is formed without continuously forming the second gate insulating film (218 in FIG. 6D) in the chamber of the CVD apparatus (293 in FIG. 6D) A second gate insulating film (218b in FIG. 6D) made of silicon oxide (SiO ₂ ) is formed on the barrier layer 219 in a state where the barrier layer 219 is formed through the barrier layer 219, It is possible to suppress the occurrence of stain caused by the above-mentioned problems.

Since the barrier layer 219 made of IGZO has a large oxygen content, it tends to attract hydrogen around it. Therefore, the hydrogen from the first gate insulating film 218a remains on the barrier layer 219.

Although not shown in the drawing, a heat treatment process for dehydrogenating may be further performed before forming the barrier layer 219 after forming the first gate insulating film 218a.

At this time, the annealing process for dehydrogenation is performed at 300 to 500 ° C for a predetermined time, that is, about 30 to 60 minutes. By the heat treatment process, the hydrogen contained in the first gate insulating film 218a A part of which is discharged into the air to reduce the hydrogen content in the first gate insulating film 218a.

However, the heat treatment process for dehydrogenation is not necessarily required to proceed because of the characteristics of the first substrate 210 of the organic electroluminescent device according to the second embodiment of the present invention.

Next, the said barrier layer (219) SiH4 and N ₂ O as a reaction gas was located in the interior chamber 293 of the second above the first substrate 210 again CVD device formed as shown in Figure 6d A second gate insulating film 218b made of silicon oxide (SiO ₂ ) is formed on the barrier layer 219 by introducing a plasma having an appropriate flow rate ratio and generating a plasma in the chamber 293.

The silicon oxide (SiO ₂₎ a second gate insulating film (218b) also because the use of SiH4 as a reaction gas, hydrogen present therein, however, a silicon nitride (SiNx) a first gate insulating film (218a) against the material of the material that amount A small amount of hydrogen located in the second gate insulating film 218b is also transferred to the barrier layer 219 having a large oxygen content, so that the oxide semiconductor layer (220 in FIG. 6H) The penetration amount is greatly reduced compared to the conventional organic electroluminescent device.

After forming the second gate insulating film 218b, a heat treatment process for dehydrogenating the inside of the second gate insulating film 218b may be further performed before forming the oxide semiconductor layer 220 (FIG. 6H) The characteristics of the organic electroluminescent device according to the second embodiment of the present invention may be omitted.

6E, an oxide semiconductor material such as IGZO (Zinc Oxide Zinc Oxide), ZTO (Zinc Tin Oxide), or ZIO (Zinc Indium Oxide) is formed on the second gate insulating film 218b. Or an oxide semiconductor material layer (not shown) is formed.

Unlike the barrier layer 219, the oxide semiconductor material layer (not shown) may be formed by using a liquid oxide semiconductor material without using a sputtering device.

If the material of the oxide semiconductor material layer (not shown) is IGZO, the oxide semiconductor material layer (not shown) made of IGZO may have a composition ratio of indium: gallium: zinc: oxygen of 1: 1: 1: 1: 1: 3. This is because if the oxygen content ratio of the IGZO is 5 times larger than that of the other inclusions, the non-semiconducting characteristics will appear rather than the semiconductor characteristics.

Furthermore, in the case where the oxide semiconductor material layer (not shown) is made of ZTO or ZIO, the content except for oxygen is 1: 1 in a similar manner to IZGO for the semiconductor characteristic development, It is preferable to form it so as to be contained at a ratio of 3 times or less.

After the oxide semiconductor material layer (not shown) is formed as described above, the oxide semiconductor material layer (not shown) is patterned by a mask process to form gate electrodes 215 in each driving region DA So that the island-shaped oxide semiconductor layer 220 is formed.

6F, an inorganic insulating material such as silicon oxide (SiO ₂ ) is deposited on each of the island-shaped oxide semiconductor layers 220 to form an etch stopper 222 on the entire surface of the first substrate 210. Next, as shown in FIG. 6F, And a masking process is performed to pattern the semiconductor layer contact holes 223 (223a and 223b) to expose both sides of the respective oxide semiconductor layers 220, respectively.

At this time, after the mask process is performed on the etch stopper 222 to form the first gate insulating film 218a for dehydrogenating the etch stopper 222 before forming the semiconductor layer contact hole 220, The same heat treatment process as that described above may be further performed.

6G, a low resistance metal material such as copper (Cu), a copper alloy (AlNd), aluminum (Al), or the like is formed on the etch stopper 222 provided with the semiconductor layer contact hole 223, (Not shown) having a multilayer structure or a single layer or a multilayer structure by depositing one or more materials selected from aluminum nitride (AlNd), molybdenum (Mo), and molybdenum (MoTi).

Thereafter, a data line (not shown) is formed on the etch stopper 222 to define a pixel region P intersecting the gate line (not shown) by patterning the second metal layer (not shown) And at the same time, a source electrode 233 and a drain electrode 236 which are spaced apart from each other in the respective driving regions DA are formed.

At this time, a source electrode (not shown) forming a switching thin film transistor (not shown) of the source electrode 233 is formed to be connected to the data line (not shown).

The source electrode 233 and the drain electrode 236 provided in the driving region DA are formed to be in contact with the oxide semiconductor layer 220 through the semiconductor layer contact hole 223, respectively.

The gate electrode 215, the first gate insulating film 218a, the barrier layer 219, the second gate insulating film 118, and the oxide semiconductor layer 220, which are sequentially stacked in each driving region DA, The etch stopper 222 and the source and drain electrodes 233 and 236 spaced from each other constitute a switching or driving thin film transistor Tr.

The steps after forming the driving and switching thin film transistor (DTr, not shown) proceeds in the same way as the above-described method of manufacturing the organic EL device according to the first embodiment of the present invention (see FIGS. 3E to 3O) , Or a method of manufacturing a general organic electroluminescent device, the description thereof will be omitted.

In the case of the first substrate 210 of the organic electroluminescent device according to the second embodiment of the present invention manufactured as described above, the barrier layer 219 made of IGZO having a relatively large oxygen content is provided, The first and second gate insulating films 218a and 218b and the etch stopper 222 to act as a hydrogen getter for reducing hydrogen permeating into the oxide semiconductor layer 220. Therefore, The amount of hydrogen permeating into the layer 220 can be remarkably reduced.

Therefore, there is an effect of preventing the luminance non-uniformity phenomenon due to the increase of the scattering due to the shift of the threshold voltage generated by the hydrogen penetration into the oxide semiconductor layer 220.

Furthermore, the first and second gate insulating films 218a and 218b have an effect of suppressing the occurrence of stains due to the difference in thermal conductivity.

Meanwhile, as a method for suppressing the penetration of hydrogen into the oxide semiconductor layer, the barrier layer 219 of the IGZO material described above is formed. In addition to the method of manufacturing the organic electroluminescent device according to the second embodiment of the present invention There is a method in which an insulating layer of an inorganic insulating material is irradiated with extreme ultraviolet for a predetermined time to desorb hydrogen present therein and induce OH bonding.

Hereinafter, a method for fabricating an organic electroluminescent device according to a third embodiment of the present invention, which is characterized by irradiating extreme ultraviolet rays to suppress penetration of hydrogen into the oxide semiconductor layer, will be described in detail.

FIGS. 7A to 7F are cross-sectional views illustrating the steps of manufacturing an organic electroluminescent device according to a third embodiment of the present invention, illustrating steps of forming a driving and switching thin film transistor on a first substrate. In the method of manufacturing an organic electroluminescent device according to the third embodiment of the present invention, processes after formation of a driving and switching thin film transistor (DTr, not shown) are similar to those of the organic electroluminescent device according to the first embodiment of the present invention (See FIGS. 3E to 3O), or a general OLED fabrication method, so that only the step of forming the driving and switching thin film transistor DTr (not shown) Explain.

7A, a low resistance metal material such as copper (Cu), a copper alloy (AlNd), a copper alloy (AlNd), or the like is coated on a first substrate 210 of a transparent insulating material, for example, a glass substrate or a flexible plastic substrate. A first metal layer (not shown) having a multilayer structure or a single layer or a multilayer structure is formed by depositing one or more materials selected from aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo) and moly titanium (MoTi) A gate line (not shown) extending in one direction is formed by patterning the gate electrode 315 in the driving region DA while a mask process is performed thereon.

Next, as shown in Figure 7b, the gate wiring (not shown) and a gate electrode 315 over the inorganic insulating material, for example silicon (SiO ₂₎ or the gate insulating film 318 by depositing a silicon nitride (SiNx) oxide .

Although the gate insulating film 318 has a single layer structure in the drawing, a gate insulating film (not shown) of silicon nitride (SiNx) and a second gate insulating film of silicon oxide (SiO ₂ ) ).

In the method of manufacturing an organic electroluminescent device according to the third embodiment of the present invention, extreme ultraviolet rays having a wavelength range of 100 to 400 nm (including a wavelength band of 146 nm or 172 nm) are formed on the gate insulating film 318 EUV) for 1 minute to 10 minutes.

When such an extreme ultraviolet ray is irradiated on the gate insulating film 318 made of silicon oxide (SiO ₂ ) or silicon nitride (SiNx) as described above, the hydrogen contained in the gate insulating film 318 is broken away from the bond with silicon The OH radical is reacted with ozone and oxygen radicals generated by the extreme ultraviolet irradiation to reduce the content thereof and to achieve a stable bonding state inside the gate insulating film 318 itself.

Moreover, the gate insulating film 318, the second gate insulating film (not shown in the first gate insulating film (not shown) and silicon (SiO ₂₎ oxidation of the silicon nitride (SiNx) a single layer made, or silicon nitride (SiNx) of The ozone and the oxygen radical generated by the extreme ultraviolet irradiation are bonded to the surface of the gate insulating film 318 made of silicon nitride (SiNx) at the surface of the gate insulating film 218 made of silicon nitride (SiNx) Oxygen is replenished into the gate insulating film 318 and the surface roughness is improved.

As a result, the interface characteristic of the gate insulating film 218 made of silicon nitride (SiNx) is improved, so that the bonding strength with the material layer (oxide semiconductor layer or a second gate insulating film (not shown) made of silicon oxide (SiO ₂ ) And finally improve the threshold voltage scattering characteristics of the driving and switching thin film transistor DTr including the gate insulating film 318 so that the reliability of the driving thin film transistor DTr (not shown) There is an effect that can be secured.

In the case of irradiating extreme ultraviolet rays to the gate insulating film 318 made of an inorganic insulating material, there is no need to carry out the heat treatment step for dehydrogenating selectively proceeding in the method of manufacturing the organic electroluminescent device according to the second embodiment .

The method of irradiating an extreme ultraviolet ray to an insulating film made of an inorganic insulating material is more effective in the desorption of hydrogen compared to a heat treatment step for dehydrogenation and further shortens the processing time thereby improving the productivity per unit time of the organic electroluminescent device .

That is, in the case of a heat treatment process through dehydrogenation, the process generally proceeds at a temperature of 300 to 500 ° C for 30 minutes to 60 minutes. However, the process of extreme ultraviolet irradiation, which is a process characteristic of the third embodiment of the present invention, Lt; 0 > C) for 1 minute to 10 minutes, which is more advantageous in productivity per unit time of the organic electroluminescent device.

Next, as shown in FIG. 7C, an oxide semiconductor material, for example, indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), or zinc oxide (ZIO) is deposited on the gate insulating layer 318 Or an oxide semiconductor material layer (not shown) is formed on the gate electrode 315 by patterning the oxide semiconductor material layer (not shown). Then, an island-shaped oxide semiconductor layer 320 is formed corresponding to each gate electrode 315 in each driving region DA, .

7D, an inorganic insulating material such as silicon oxide (SiO ₂ ) is deposited on each of the island-shaped oxide semiconductor layers 320 to form an etch stopper 322 on the entire surface of the first substrate 310 ).

Then, extreme ultra-violet ray (EUV) having a wavelength band of 100 to 400 nm including a wavelength band of 146 nm or 172 nm is irradiated to the etch stopper 322 for 1 to 10 minutes to remove hydrogen contained in the etch stopper 322 At the same time, OH bond is induced to reduce the hydrogen content in the etch stopper 322 and to achieve a stable bonding state inside the etch stopper 322 itself.

By this extreme ultraviolet irradiation, the etch stopper 322 is also improved in interfacial characteristics, so that the bonding strength with the source and drain electrodes (333 and 336 in Fig. 7F) formed on the etch stopper 322 is improved.

Next, as shown in FIG. 7E, the etching stopper 322, which has been irradiated with the extreme ultraviolet rays, is patterned by a mask process to expose both sides of the respective oxide semiconductor layers 320, 323 (323a, 323b).

Due to the progress of the extreme ultraviolet irradiation process, the heat treatment process for dehydrogenating the etch stopper 322 is omitted because it is an unnecessary process.

Although the extreme ultraviolet light irradiation process is shown as an example of the etch stopper 322 before forming the semiconductor layer contact hole 323 in the drawing, the extreme ultraviolet light irradiation is performed by the etch stopper 322, The semiconductor layer contact hole 323 may be formed before the mask process is performed.

After the semiconductor layer contact hole 323 is first formed and the extreme ultraviolet light irradiation process is performed, a photoresist pattern (not shown) is formed on the etch stopper 322 by the mask process in forming the semiconductor layer contact hole 323, A predetermined photoresist residue may be left in the process of stripping and removing the photoresist residue, and the photoresist residue may be burned out by the extreme ultraviolet ray to be completely removed, so that the etch stopper 322 (333, 336 in Fig. 7F), which is further in contact with the source and drain electrodes (331, 336 in Fig. 7F).

Next, as shown in FIG. 7F, a low resistance metal material such as copper (Cu), a copper alloy (AlNd), aluminum (Al), or the like is formed on the etch stopper 322 provided with the semiconductor layer contact hole 323, (Not shown) having a multilayer structure or a single layer or a multilayer structure by depositing one or more materials selected from aluminum nitride (AlNd), molybdenum (Mo), and molybdenum (MoTi).

A data line (not shown) is formed on the etch stopper 322 to intersect the gate line (not shown) to define the pixel region P by patterning the second metal layer (not shown) At the same time, a source electrode 333 and a drain electrode 336, which are spaced apart from each other in the respective driving regions DA, are formed.

At this time, a source electrode (not shown) of the source electrode 333 forming a switching thin film transistor (not shown) is formed to be connected to the data line (not shown).

The source electrode 333 and the drain electrode 336 provided in the driving region DA are formed to be in contact with the oxide semiconductor layer 320 through the semiconductor layer contact hole 323, respectively.

The gate electrode 315, the gate insulating film, the oxide semiconductor layer 320, the etch stopper 322 and the source and drain electrodes 333 and 336 which are sequentially stacked in the respective driving regions DA are formed on the gate insulating film, Forming a switching or driving thin film transistor Tr.

The subsequent process is the same as the above-described method of manufacturing the organic electroluminescent device according to the first embodiment of the present invention, or is the same as the conventional method of manufacturing the organic electroluminescent device.

The organic electroluminescent device manufactured by the method of manufacturing an organic electroluminescent device according to the third embodiment of the present invention includes the gate insulating film 318 made of an inorganic insulating material and the etch stopper 322, The hydrogen of the oxide semiconductor layer 320 is separated from the silicon, and the desorbed hydrogen reacts with ozone or oxygen radicals generated by the extreme ultraviolet irradiation to form an OH bond, thereby reducing the amount of hydrogen in the oxide semiconductor layer 320, And at the same time, the surface roughness is improved, so that there is an effect of ultimately improving the driving voltage and the threshold voltage dispersion characteristic of the switching device and improving the reliability.

Further, the surface modification and cleaning effect of the gate insulating film 318 and the etch stopper 322 has the effect of improving the bonding strength with the material layer in contact therewith.

The extreme ultraviolet irradiation process, which is the most characteristic constitution in the method of manufacturing the organic electroluminescent device according to the third embodiment of the present invention, is not limited to the method of manufacturing the organic electroluminescent device according to the third embodiment, It is obvious that the present invention can also be applied to the fabrication of the organic electroluminescent device according to the first and second embodiments. In this case, the heat treatment process for dehydrogenating the gate insulating film made of an inorganic insulating material and the etch stopper is omitted.

The present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit of the present invention.

101: Organic electroluminescent device
110: first substrate
115: gate electrode
118: Gate insulating film
120: oxide semiconductor layer
122: etch stopper
123: semiconductor layer contact hole
133: source electrode
136: drain electrode
140: first protective layer
143: First light pattern
145: Color filter layer
145a: Red color filter pattern
146: Second light pattern
146a, 146b: Red and green dummy color filter pattern
150: Overcoat layer
153: second protective layer
154: drain contact hole
157: first electrode
160: Bank
163: Organic light emitting layer
167: second electrode
170: second substrate
DA: drive area
DTr: (Driving) Thin film transistor
E: Organic light emitting diode
gch: gate contact hole
LA: light emitting region
P: pixel area

Claims (37)

A pixel region defining a light emitting region and a driving region;
A thin film transistor provided in the driving region on the substrate;
A first protective layer formed on the entire surface of the thin film transistor;
A first shielding pattern formed on the first protective layer and connected to the gate electrodes of the thin film transistors corresponding to the thin film transistors;
A color filter layer formed on each of the pixel regions on the first passivation layer;
A second light shielding pattern made of the same material as the color filter layer corresponding to the upper and side surfaces of the thin film transistors on the first light shielding pattern;
A first electrode connected to the drain electrode of the thin film transistor for each pixel region on the color filter layer;
An organic light emitting layer formed on the first electrode;
A second electrode formed on the organic light-
And an organic electroluminescent device.
The method according to claim 1,
The thin film transistor includes an etch stopper having a gate electrode, a gate insulating film, an island-shaped oxide semiconductor layer, and a semiconductor layer contact hole for exposing both sides of the oxide semiconductor layer from the substrate, And a source electrode and a drain electrode which are in contact with the oxide semiconductor layer through holes and are spaced apart from each other.
3. The method of claim 2,
Wherein the thin film transistor is a driving thin film transistor and the switching thin film transistor, and the thin film transistor connected to the first electrode is the driving thin film transistor.
The method of claim 3,
The substrate further includes a gate wiring connected to a gate electrode of the switching thin film transistor and a data wiring connected to a source electrode of the switching thin film transistor.
And a power supply line connected to the source electrode of the driving thin film transistor.
The method according to claim 1,
The color filter layer may have a structure in which the red, green, and blue color filter patterns are periodically repeated for each pixel region, or the red, green, and blue color filter patterns are periodically repeated Wherein the organic electroluminescent element is an organic electroluminescent element.
6. The method of claim 5,
Wherein the second light-shielding pattern comprises at least one color filter pattern of the red, green, and blue color filter patterns.
The method according to claim 6,
The second light-shielding pattern may have a double-layer structure in which color filter patterns of two colors out of the red, green, and blue color filter patterns are overlapped, or the red, green, and blue color filter patterns are overlapped, Type organic electroluminescent device.
6. The method of claim 5,
The organic light emitting layer emits white light or emits red, green, and blue light. When the organic light emitting layer emits red, green, and blue light, the organic light emitting layer emits light of the same color as the color filter pattern formed under the organic light emitting layer Wherein the organic light emitting layer is disposed.
The method according to claim 1,
Wherein an overcoat layer having a flat surface over the second light shielding pattern and a second passivation layer made of an inorganic insulating material are further formed between the color filter layer and the first electrode.
10. The method of claim 9,
The second protective layer, the overcoat layer, and the first protective layer are provided with a drain contact hole for exposing the drain electrode of the thin film transistor. The first electrode and the drain electrode contact with each other through the drain contact hole Organic electroluminescent device.
The method according to claim 1,
Wherein the first light-shielding pattern is made of an opaque metallic material.
The method according to claim 1,
Wherein a bank is formed at a boundary of each pixel region so as to surround the organic light emitting layer.
Forming a thin film transistor in the driving region on a substrate defining a pixel region having a light emitting region and a driving region;
Forming a first protective layer over the entire surface of the thin film transistor;
Forming a first light blocking pattern connected to the gate electrodes of the thin film transistors corresponding to the thin film transistors on the first protective layer;
Forming a color filter layer on each of the pixel regions on the first protective layer and simultaneously forming a second light shielding pattern on the first light shielding pattern with the same material as the color filter layer corresponding to the upper and side surfaces of the thin film transistor, Wow;
Forming a first electrode connected to a drain electrode of the thin film transistor on the color filter layer for each pixel region;
Forming an organic light emitting layer on the first electrode;
Forming a second electrode over the organic light emitting layer
Wherein the organic electroluminescent device comprises a first electrode and a second electrode.
14. The method of claim 13,
Wherein forming the thin film transistor comprises:
Forming a gate electrode in the driving region on the substrate;
Forming a gate insulating film over the gate electrode;
Forming an island-shaped oxide semiconductor layer on the gate insulating film in correspondence with the gate electrode;
Forming an etch stopper having a semiconductor layer contact hole exposing both sides of the oxide semiconductor layer on the oxide semiconductor layer;
Forming a source electrode and a drain electrode which are in contact with the oxide semiconductor layer through the semiconductor layer contact hole over the etch stopper and are spaced apart from each other,
Wherein the organic electroluminescent device comprises a first electrode and a second electrode.
15. The method of claim 14,
Wherein the thin film transistor comprises a driving thin film transistor and a switching thin film transistor in each driving region and the drain electrode and the first electrode of the driving thin film transistor are connected to each other.
16. The method of claim 15,
Wherein forming the gate electrode includes forming a gate wiring connected to a gate electrode of the switching thin film transistor,
Wherein forming the source electrode and the drain electrode includes forming a data line connected to a source electrode of the switching thin film transistor and a power line spaced apart from the data line.
14. The method of claim 13,
The step of forming the color filter layer and the second light-
Green, blue or red color resist on the first protective layer and patterning the red, green, blue or red color resist on the first protective layer, respectively, so that red, green and blue color A filter pattern or a color filter pattern of red, green, blue and white,
And at the same time, one or more of the red, green, and blue color filter patterns are superimposed on the driving region.
18. The method of claim 17,
Before forming the first electrode
Forming an overcoat layer having a flat surface over the color filter layer and the second light-shielding pattern;
Forming a second protective layer of an inorganic insulating material over the overcoat layer;
Forming a drain contact hole exposing the drain electrode by patterning the second passivation layer, the overcoat layer, and the first passivation layer;
Wherein the organic electroluminescent device comprises a first electrode and a second electrode.
14. The method of claim 13,
Wherein forming the first passivation layer over the thin film transistor comprises:
And forming a gate contact hole exposing the gate electrode by patterning the first passivation layer, the etch stopper, and the gate insulating layer.
14. The method of claim 13,
And forming a bank at a boundary of each pixel region, overlapping the edge of the first electrode before forming the organic light emitting layer.
A pixel region defining a light emitting region and a driving region;
A gate electrode provided in the driving region on the substrate;
A first gate insulating layer formed on the entire surface of the substrate over the gate electrode;
A barrier layer formed on the entire surface of the substrate over the first gate insulating film and made of IGZO (Indium Gallium Zinc Oxide);
A second gate insulating layer formed on the entire surface of the substrate over the barrier layer;
An oxide semiconductor layer formed on the second gate insulating film in correspondence with the gate electrode;
An etch stopper having a semiconductor layer contact hole exposing the oxide semiconductor layer on the oxide semiconductor layer;
And a source electrode and a drain electrode formed on the upper portion of the etch stopper to be in contact with the oxide semiconductor layer through the semiconductor layer contact hole,
And an organic electroluminescent device.
22. The method of claim 21,
A first protective layer formed on the entire surface of the source and drain electrodes;
A first shielding pattern formed on the first passivation layer and connected to the gate electrode;
A color filter layer formed on each of the pixel regions on the first passivation layer;
A second light-shielding pattern made of the same material as the color filter layer corresponding to an upper portion of the source and drain electrodes over the first light-shielding pattern;
A first electrode connected to the drain electrode for each pixel region on the color filter layer;
An organic light emitting layer formed on the first electrode;
A second electrode formed on the organic light-
Further comprising an organic electroluminescent device.
23. The method of claim 21 or 22,
The first gate insulating film is made of silicon nitride (SiNx), the second gate insulating film is an organic electroluminescent device characterized by consisting of a silicon oxide (SiO _2).
23. The method of claim 21 or 22,
Wherein the barrier layer has a ratio of indium: gallium: zinc: oxygen of 1: 1: 1: 5 to 1: 1: 1: 10.
23. The method of claim 21 or 22,
The oxide semiconductor layer is formed of any one of indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), and zinc oxide (ZIO)
Wherein each of the IGZO, ZTO, and ZIO has a ratio of 1 in the content other than oxygen, and oxygen has a ratio of 1 to 3 in relation to contents other than oxygen.
Forming a gate electrode in the driving region on a pixel region defined substrate having a light emitting region and a driving region;
Forming a first gate insulating film on the entire surface of the substrate over the gate electrode;
Forming a barrier layer made of IGZO (Indium Gallium Zinc Oxide) on the entire surface of the substrate over the first gate insulating film;
Forming a second gate insulating film on the entire surface of the substrate over the barrier layer;
Forming an oxide semiconductor layer on the second gate insulating film in correspondence with the gate electrode;
Forming an etch stopper having a semiconductor layer contact hole exposing the oxide semiconductor layer over the oxide semiconductor layer;
Forming source and drain electrodes spaced apart above the etch stopper and in contact with the oxide semiconductor layer through the semiconductor layer contact holes,
Wherein the organic electroluminescent device comprises a first electrode and a second electrode.
27. The method of claim 26,
Forming a first passivation layer over the source and drain electrodes;
Forming a first light shielding pattern connected to the gate electrode on the first passivation layer;
Forming a color filter layer on each of the pixel regions on the first protective layer and forming a second light shielding pattern made of the same material as the color filter layer corresponding to the upper portion of the source and drain electrodes over the first light shielding pattern ;
Forming a first electrode connected to the drain electrode for each pixel region on the color filter layer;
Forming an organic light emitting layer on the first electrode;
Forming a second electrode over the organic light emitting layer
Wherein the organic light emitting device further comprises:
28. The method of claim 26 or 27,
The first gate insulating film manufacturing method is characterized in an organic electroluminescent device formed by the second gate insulating film, and formed by depositing silicon nitride (SiNx) is deposited a silicon oxide (SiO _2).
29. The method of claim 28,
Wherein the barrier layer is formed to have a ratio of indium: gallium: zinc: oxygen of 1: 1: 1: 5 to 1: 1: 1: 10.
28. The method of claim 26 or 27,
After the first gate insulating film, the second gate insulating film, and the etch stopper are formed, a heat treatment process is performed for 30 minutes to 60 minutes in a temperature atmosphere of 300 ° C to 500 ° C for dehydrogenating, ≪ / RTI >
28. The method of claim 26 or 27,
After forming the first gate insulating film, the second gate insulating film, and the etch stopper, an extreme ultraviolet ray having a wavelength band of 100 to 400 nm is applied to each of the first gate insulating film, the second gate insulating film, and the etch stopper And then irradiating the organic electroluminescent device.
32. The method of claim 31,
And the irradiation of the extreme ultraviolet ray is performed for 1 minute to 10 minutes.
Forming a gate electrode in the driving region on a pixel region defined substrate having a light emitting region and a driving region;
Forming a gate insulating film of a double layer structure consisting of a single layer or a different material to the gate electrode over the deposited inorganic insulating material is silicon oxide (SiO ₂₎ or silicon nitride (SiNx) on the front substrate;
Irradiating the gate insulating film with extreme ultraviolet light having a wavelength band of 100 to 400 nm;
Forming an oxide semiconductor layer on the gate insulating film in correspondence to the gate electrode;
Forming an etch stopper having a semiconductor layer contact hole exposing the oxide semiconductor layer over the oxide semiconductor layer;
Irradiating the etch stopper with extreme ultraviolet light having a wavelength band of 100 to 400 nm;
Forming source and drain electrodes spaced apart above the etch stopper and in contact with the oxide semiconductor layer through the semiconductor layer contact holes,
Wherein the organic electroluminescent device comprises a first electrode and a second electrode.
34. The method of claim 33,
Wherein the step of irradiating the etch stopper with extreme ultraviolet light comprises:
Wherein the etching stopper is formed before or after forming the semiconductor layer contact hole in the etch stopper.
34. The method of claim 33,
And the irradiation of the extreme ultraviolet ray is performed for 1 minute to 10 minutes.
34. The method of claim 33,
The hydrogen bonded to the silicon is desorbed in each of the gate insulating film and the etch stopper by the extreme ultraviolet irradiation and is reacted with ozone or oxygen radicals generated by the extreme ultraviolet irradiation to form an OH bond, A method of manufacturing a light emitting device.
34. The method of claim 33,
Forming a first passivation layer over the source and drain electrodes;
Forming a first light shielding pattern connected to the gate electrode on the first passivation layer;
Forming a color filter layer on each of the pixel regions on the first protective layer and forming a second light shielding pattern made of the same material as the color filter layer corresponding to the upper portion of the source and drain electrodes over the first light shielding pattern ;
Forming a first electrode connected to the drain electrode for each pixel region on the color filter layer;
Forming an organic light emitting layer on the first electrode;
Forming a second electrode over the organic light emitting layer
Wherein the organic light emitting device further comprises:

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