KR20140022891A - Substrate heat-treatment device and substrate heat- treatment method - Google Patents

Abstract

The present invention shortens the heat treatment time of the substrate and greatly reduces the cost.
First lamp heaters 36a to 36d for emitting heating light for heating the substrate 12 in the first region, and second lamp heaters 38a for emitting heating light for heating the substrate 12 in the second region; 38b, 3rd lamp heater 40a-40d which injects the heating light which heats the board | substrate 12 of a 3rd area | region, and is arrange | positioned between 2nd lamp heater 38a and the board | substrate 12 of a 2nd area | region. And condensing lenses 44a to 44c for irradiating the heating light with respect to the substrate 12 in a direction orthogonal to the moving direction of the substrate 12, and the substrate 12 from the first region to the third region through the third region. A moving part 48 for moving to the area, and controlling the first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and the third lamp heaters 40a to 40d according to the heat treatment profile. The substrate 12 is moved and controlled.

Description

Substrate heat treatment apparatus and substrate heat treatment method {SUBSTRATE HEAT-TREATMENT DEVICE AND SUBSTRATE HEAT-TREATMENT METHOD}

The present invention relates to a substrate heat treatment apparatus and a substrate heat treatment method. More specifically, the present invention is to improve the crystal defects and the film quality of the semiconductor wafer, to convert the amorphous silicon layer formed on the glass substrate constituting the liquid crystal substrate to a polysilicon layer, on the insulating substrate constituting the solar cell substrate The present invention relates to a substrate heat treatment apparatus and a substrate heat treatment method for performing annealing to improve the film quality of an amorphous silicon layer formed on the substrate and to convert it to a polysilicon layer.

For example, a semiconductor wafer implanted by ion implantation or a semiconductor wafer formed by CVD, sputtering, or vapor deposition is heat-treated for crystal defect improvement or film quality improvement. In addition, the liquid crystal substrate is a heat treatment for converting an amorphous silicon layer formed on a glass substrate into a polysilicon layer as a means for speeding up the operation of the transistor at the time of its manufacture. In addition, the solar cell substrate is a glass substrate, a substrate having an insulating film such as an alumina, a silicon oxide film, or a silicon nitride film on the surface, an improvement in the film quality of an amorphous silicon layer formed on an insulating substrate such as a carbon substrate having an insulating film on the surface, or an amorphous silicon layer. Heat treatment for conversion from to polysilicon layer.

Regarding such heat treatment, Non-Patent Document 1 describes the development of the fine junction technology for about 40 years from the 1970s until 2008 when a MOS transistor having a gate width of 30 nm was realized at the laboratory stage. Non-Patent Document 1 classifies and evaluates the fine bonding technique as follows.

(1) Infrared Lamp Annealing: This technique has the longest annealing time of about 30 seconds to 1 minute and is the oldest technique.

(2) Rapid Thermal Annealing (RTA): This technique uses a halogen lamp, and the annealing time is about 1 to 60 seconds. This technique uses a halogen lamp with a long wavelength, and has high temperature uniformity between patterns.

(3) Spike RTA: This technique is a method of rapidly increasing the RTA of (2), and the annealing time is 0.1 to 1 second.

(4) Flash Lamp Annealing (FLA): This technology uses xenon lamps. The shortest time to anneal is about m seconds. The uniformity of the temperature between the patterns is lower than that of RTA in (2). Non-Patent Document 1 shows an example in which the substrate temperature is raised from 450 ° C to 1000 to 1300 ° C.

(5) Laser Spike Annealing (LSA): This technique is a technique of scanning a substrate by a carbon dioxide gas laser and reaches about m seconds at a peak temperature of 1350 ° C or higher. LSA can be performed after spike RTA of (3).

(6) MSA (Milli Second Annealing): This technique is a technique of performing annealing of 0.1 second or less at 1000 to 1050 ° C using a xenon lamp. This technique can also anneal for 10 ^-3 seconds.

In addition, Non-Patent Document 1 discloses heat treatment of a semiconductor wafer in which FLA of (4) and MSA of (6) are combined among these methods.

19 graphically shows the relationship between the surface temperature and the time of the semiconductor wafer in the FLA. In single wafer heat treatment, one semiconductor wafer is heated to 400 to 500 ° C on a metal support plate known as a hot plate. Thereafter, the semiconductor wafer approaches xenon lamps having a diameter of about 3 mm arranged in a plurality of disk shapes, and is shortly annealed by being cut off immediately after the lamps are turned on.

In addition, Non-Patent Document 2 describes that the furnace is subjected to a heat treatment at 1000 ° C or lower in order to densify the insulating film. As of seven years after the publication of Non-Patent Document 2, the densification of the insulating film has been generally performed by lamp heating at a low temperature of about 300 to 500 DEG C in accordance with the decrease in the junction depth.

The conventional FLA shown in FIG. 19 preheats a semiconductor wafer to 500 degreeC with a hotplate, for example, it heats to 1000 degreeC, and returns to 500 degreeC again. However, since the hot plate has the heat of retention of the metal plate, the temperature drop from the preheating temperature is slow, and the waiting time until the next semiconductor wafer is processed becomes long. In addition, the method using a hot plate requires a long time to change the preheating temperature. In addition, a hot plate can process only one semiconductor wafer at a time, and the width | variety of a heating apparatus will become large when it is going to process two or more sheets simultaneously. Therefore, the process using a hot plate is practically impossible to process two or more sheets.

In addition, since the method using a hot plate heats the entire surface of the semiconductor wafer, if the performance of any of the plurality of lamps is poor, the surface of the semiconductor wafer becomes unevenly heated. Therefore, in the method using a hot plate, the maintenance cost is high because it is necessary to maintain the performance of all lamps.

On the other hand, film quality improvement has long been carried out in furnaces, and recently, by lamp heating, there is a similar problem.

Therefore, the applicant has developed a heat treatment apparatus for realizing such heat treatment.

For example, Patent Literature 1 discloses a vertical heating furnace having a first region in which a furnace is heated to a first temperature in a heater, and a second region in which the furnace is heated to a second temperature higher than the first temperature in another heater. It is starting. This heating furnace heats a semiconductor wafer to a 1st temperature in a 1st area | region, then conveys the heated semiconductor wafer to a 2nd area | region, and heats it to predetermined temperature above 1st temperature and below 2nd temperature.

Japanese Patent No. 4064911

Kato Masataka, "Advanced, Evaluation, and Analysis Techniques for Splicing Technologies", September 23, 2008, Fujitsu Microelectronics Co., Ltd. Kazuo Maeda, 「First Semiconductor Nano Process」, Industrial Research Meeting, February 10, 2004, page 104

In this case, in the heat treatment apparatus disclosed in Patent Literature 1, it is particularly important that the semiconductor wafer be rapidly heated to the desired heating temperature without variation in the second region.

However, it is very difficult to uniformly heat the entire surface of a substrate such as a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate using a heater. In addition, in order to heat the surface of these substrates at high temperature for a short time, it is necessary to add a large current to the heater. Therefore, the said heat processing apparatus has a problem that the cost required for heat processing rises. In addition, since a heater becomes a high temperature state with a large current being applied, a problem arises that the cost required for maintenance of the heat treatment apparatus is increased by deterioration of the heater over time.

This invention is made | formed in view of the said subject, The board | substrate heat processing apparatus which can heat the surface of a board | substrate to a desired heating temperature quickly by arbitrarily adjusting the heat processing time of the board | substrate which is a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate, and It is an object to provide a substrate heat treatment method. In addition, an object of the present invention is to provide a substrate heat treatment apparatus and a substrate heat treatment method which can shorten the processing time and can significantly reduce the maintenance cost, the device cost, and the operation cost of the device.

A substrate heat treatment apparatus according to the present invention includes a first region for heating a substrate, which is a semiconductor wafer, a liquid crystal substrate, or a substrate for a solar cell, to a first temperature, and a substrate for heating the substrate heated to the first temperature to a second temperature. A second region, a third region for heating the substrate heated to the second temperature to a third temperature, first heating means for heating the substrate in the first region, and the substrate in the second region. Second heating means, which is a lamp heater for emitting heating light for heating, third heating means for heating the substrate in the third region, and the substrate from the first region to the second region. A moving part for moving to three regions, and disposed between the second heating means and the substrate of the second region, extending in a direction parallel to the plane of the substrate and orthogonal to the moving direction of the substrate,And a condenser lens for irradiating the heating light in a direction orthogonal to the moving direction to skin the substrate, a current supplied to the first heating means, the second heating means, and the third heating means, The first heating means, the second heating means and the third heating means are controlled in accordance with a heat treatment profile storage unit which stores a heat treatment profile including a moving speed of the substrate by the moving unit, and the heat treatment profile. In addition, it characterized in that it comprises a control unit for controlling the movement of the substrate.

In the substrate heat treatment apparatus, when the substrate is the semiconductor wafer, the first temperature is set in a range of 300 to 450 ° C. in order to improve crystal defects of the semiconductor wafer subjected to ion implantation, and the second temperature is The temperature is set in the range of 800 to 1100 ° C, and the third temperature is set in the range of 200 to 400 ° C.

In the substrate heat treatment apparatus, when the substrate is the semiconductor wafer, the first temperature is 200 to improve film quality defects of the film formed on the semiconductor wafer by any one of a CVD process, a sputtering process, or a deposition process. To 450 ° C, the second temperature is set to a range of 300 to 900 ° C, and the third temperature is set to a range of 200 to 400 ° C.

In the substrate heat treatment apparatus, when the substrate is the liquid crystal substrate, in order to convert the amorphous silicon layer into a polysilicon layer, the first temperature is set in a range of 300 to 450 ° C, and the second temperature is 550 to The temperature is set in the range of 1100 ° C, and the third temperature is set in the range of 200 to 400 ° C.

The said substrate heat processing apparatus WHEREIN: It consists of a horizontal heating furnace which carries in the said board | substrate to the said 1st area | region on one end side, and carries out a said board | substrate in the horizontal direction from the said 3rd area | region of the other end side through the said 2nd area | region. It is characterized by.

In the substrate heat treatment apparatus, the condensing lens is disposed below the substrate, and the substrate moving the second region with the heat treatment surface downward from the vertical downward direction by the heating light condensed by the condensing lens. It is characterized by heating the epidermis.

In the substrate heat treatment apparatus, the condensing lens is arranged in a vertical state, and the heat treatment surface of the substrate is subjected to epidermal heating from the horizontal direction by the heating light condensed by the condensing lens.

In the substrate heat treatment apparatus, the condensing lens is disposed obliquely under the substrate, and the substrate which moves the second region with the heat treatment surface inclined downward is inclined by the heating light collected by the condensing lens. It is characterized by heating the epidermis from the direction.

In the said substrate heat processing apparatus, the said board | substrate is carried in to the said 1st area | region of the vertical direction lower end part, and the said 3rd area | region of the vertical direction lower end part common with the said 1st area | region through the said 2nd area | region of the vertical direction upper end side. It is characterized by consisting of a vertical heating furnace for carrying out the substrate from the.

In the substrate heat treatment method according to the present invention, a substrate, which is a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate, is loaded into a first region, a current based on a heat treatment profile is supplied to the first heating means, and the substrate is subjected to a first temperature. Heating the substrate, and bringing the substrate into the second region from the first region, moving the substrate at a moving speed based on a heating treatment profile, and applying a current based on the heating treatment profile to a lamp heater. A heating light emitted from the second heating means and supplied to the means, through a condensing lens parallel to the surface of the substrate and extending in a direction orthogonal to the direction of movement of the substrate; Irradiating in a direction orthogonal to the substrate and epitaxially heating the substrate to the second temperature, and the substrate from the second region. Carrying in three zones, supplying a current based on a heat treatment profile to a third heating means, and heating the substrate to a third temperature, wherein the heat treatment profile comprises the first heating means and the second heating. And a current supplied to the means and the third heating means, and the moving speed of the substrate.

In the substrate heat treatment method, when the substrate is the semiconductor wafer, the first temperature is set in the range of 300 to 450 ° C., and the second temperature is set to improve crystal defects of the semiconductor wafer subjected to ion implantation. The temperature is set in the range of 800 to 1100 ° C, and the third temperature is set in the range of 200 to 400 ° C.

In the substrate heat treatment method, when the substrate is the semiconductor wafer, the first temperature is 200 in order to improve film quality defects of the film formed on the semiconductor wafer by any one of CVD, sputtering, or deposition. To 450 ° C, the second temperature is set to a range of 300 to 900 ° C, and the third temperature is set to a range of 200 to 400 ° C.

In the substrate heat treatment method, when the substrate is the liquid crystal substrate, in order to convert the amorphous silicon layer into a polysilicon layer, the first temperature is set in a range of 300 to 450 ° C., and the second temperature is 550 to The temperature is set in the range of 1100 ° C, and the third temperature is set in the range of 200 to 400 ° C.

In the substrate heat treatment method, the substrate is carried in the first region on one end side and is carried out in the horizontal direction from the third region on the other end side through the second region.

In the substrate heat treatment method, the substrate is moved to the second region with the heat treatment surface facing downward, and the heat treatment surface is moved from the vertical downward direction by the heating light collected by the condensing lens disposed below the substrate. It is characterized by heating the epidermis.

In the substrate heat treatment method, the substrate is moved to the second region with the heat treatment surface in the vertical state, and the heat treatment surface is heated from the horizontal direction by the heating light collected by the condensing lens arranged in the vertical state. Characterized in that.

In the substrate heat treatment method, the substrate is moved to the second region with the heat treatment surface inclined downward, and the heat treatment surface is inclined lower by the heating light collected by the condensing lens disposed obliquely below the substrate. It is characterized by heating the epidermis from the direction.

In the substrate heat treatment method, the substrate is loaded into the first region on the lower side in the vertical direction, and the third region on the lower side in the vertical direction is common to the first region through the second region on the upper side in the vertical direction. It is characterized in that it is taken out from.

The substrate heat treatment method according to the present invention is a substrate heat treatment method for performing a heat treatment to improve crystal defects of an ion-implanted semiconductor wafer by moving the upright semiconductor wafer in a heating furnace in a direction along the semiconductor wafer surface, (A 1) a first region in which a first lamp heater is arranged to heat the inside of the heating furnace to preheat the semiconductor wafer to a temperature lower than a temperature of crystal defect improvement (hereinafter referred to as " first temperature "); Second lamp for generating a temperature (hereinafter referred to as "second temperature") within the range of 850 to 1100 ° C (hereinafter referred to as "second temperature") in order to improve crystal defects between the first region (A) and the third region (C) below. A second region in which the heater is arranged and (C) a third region in which the heater for heating the inside of the heating furnace is arranged in a temperature within a range of 650 to 800 ° C. (hereinafter referred to as “third temperature”) is arranged in the heating furnace. And the second region The same temperature profile in the moving direction of the semiconductor wafer is set so that the temperature is gradually lowered from the peak temperature within the range of the second temperature to be continuous with the first temperature and the third temperature, and in the first region A The temperature profile is generated by flowing a current through the second lamp heater only during a period in which the preheated semiconductor wafer passes through the second region C from immediately before moving to the second region C. do.

The substrate heat treatment method is a method of modifying an oxide film, a nitride film, or a W film formed by CVD, sputtering, or vapor deposition in a temperature range of 200 to 400 ° C. instead of the heat treatment for crystal defect improvement, wherein the second temperature To 500 to 750 ℃, the third temperature is characterized in that 200 to 450 ℃.

In the substrate heat treatment method, the furnace wall width in a direction parallel to the surface of the semiconductor wafer is larger than the furnace wall width in a direction orthogonal to the parallel direction, as seen in the longitudinal section of the heating furnace.

In the substrate heat treatment method, the semiconductor wafer is held in the first region and the third region, and is cracked at the first temperature and the third temperature, respectively.

In the substrate heat treatment method, the semiconductor wafer is held in the third region to be cracked at the third temperature, and then a current to the first lamp heater is applied immediately before moving from the second region to the first region. It is characterized by blocking.

As for the temperature of the crystal defect improvement in this invention, 1st temperature (preliminary heating temperature), Preferably it is 100-450 degreeC, 2nd temperature (anneal temperature), Preferably it is 850-1100 degreeC, 3rd temperature (medium Holding temperature) is preferably 650 to 800 ° C. Moreover, as for the temperature of the film | membrane improvement in this invention, 1st temperature (preliminary heating temperature) becomes like this. Preferably 200-400 degreeC, 2nd temperature (anneal temperature), 500-750 degreeC, 3rd temperature (medium) Holding temperature) is preferably 200 to 450 ° C.

The feature points of this invention different from the conventional FLA are as follows.

(A) The lamp heater performs single-sided heating or single-sided heating of one semiconductor wafer, or surface single-sided heating of two semiconductor wafers in which rear surfaces are arranged in close proximity.

(B) Annealing for crystal defect improvement or film quality improvement is performed while the semiconductor wafer is moved in the furnace without stopping the semiconductor wafer.

(C) The semiconductor wafer after annealing is heated in a third region having a temperature intermediate between the preheating temperature and the annealing temperature without returning to the preheating temperature.

(D) The semiconductor wafer is preferably heated using a halogen lamp instead of a xenon lamp.

(E) Preheating of a semiconductor wafer is performed using a lamp heater instead of a hot plate.

(F) The semiconductor wafer is heated by scanning (scanning) a strip-shaped or linear region narrower than the diameter of the semiconductor wafer without heating the entire surface at the same temperature in one go.

These characteristics are demonstrated in more detail.

In the present invention, the semiconductor wafer brought into the furnace in a horizontal state or an upright state moves inside the furnace in the vertical direction or the horizontal direction according to the surface of the semiconductor wafer. The structure of this heating furnace is not specifically limited. In the case where the semiconductor wafers are in the longitudinal arrangement, the furnace wall width in the direction parallel to the plane of the semiconductor wafer in the cross section in the long axis direction of the furnace is larger than the furnace wall width in the direction orthogonal to the parallel direction, and the occupied floor area is small. It is preferable to set it as a heating furnace. In this case, a heater is arrange | positioned in the furnace plane parallel to the surface of a semiconductor wafer, and the space | interval of a heater and a semiconductor wafer is set as narrow as possible. In addition, it is preferable that the distance between the furnace inner wall and the surface of the semiconductor wafer or the edge of the semiconductor wafer be a substantially constant flat path over the entire circumference of the semiconductor wafer.

This invention divides into the 1st area | region (preliminary heating), the 2nd area | region (annealing), and the 3rd area | region (intermediate holding | maintenance) from the moving direction of the semiconductor wafer carried in from the inlet side of a heating furnace. In the first region and the second region, a halogen lamp heater capable of rapid temperature increase and temperature drop is disposed. The third region plays a role of auxiliary heating for forming a narrow high temperature second region, and a halogen lamp heater or an electric resistance heating heater is disposed. The first region corresponds to the preheating region of the FLA, and the second region is annealed for crystal defect improvement or film quality improvement for the moving semiconductor wafer. In the third region, the annealed semiconductor wafer is once held (hereinafter referred to as "intermediate hold"). The heating of each area is explained in more detail.

First, it is preferable that the semiconductor wafer be uniformly heated in the first region. That is, when the semiconductor wafer uniformly heated in the first region is scanned at the peak temperature of the second region, it is expected that the entire surface of the semiconductor wafer is heated up to the annealing temperature at the same speed. In addition, if the supporting jig of not only a semiconductor wafer but a semiconductor wafer is heated uniformly in a 1st area | region, the heat conduction from a semiconductor wafer to a support jig can be suppressed at the time of subsequent heating. In the third region, the semiconductor wafer is preferably heated uniformly.

When predetermined heating is performed in each area, the heating of the area where the semiconductor wafer is not arranged is as follows.

(A) Preheating of the semiconductor wafer in the first region: The second region in which the semiconductor wafer is not arranged does not generate a predetermined annealing temperature. That is, in the first region, the semiconductor wafer is not heated at all, or is heated to a temperature at which there is no significant difference from the first temperature so that the preheating temperature does not change. The third temperature in the third region plays a role of auxiliary heating for generating the second temperature (anneal temperature). Therefore, it is preferable that the 3rd area | region where the semiconductor wafer is not arrange | positioned is heated to 3rd temperature so that annealing can start immediately after completion of preheating.

(B) Annealing of the semiconductor wafer in the second region: In order to stably maintain the profile of the second temperature, the third region in which the semiconductor wafer is not disposed needs to be heated to the third temperature. It is preferable that 1st area | region continues heating to 1st temperature for the same reason.

(C) Intermediate holding of the semiconductor wafer in the third region: The first region in which the semiconductor wafer is not disposed may continue or stop heating. The second region needs to invalidate the profile of the second temperature.

As described above, the semiconductor wafer introduced into the heating furnace moves the first region, the second region, and the third region to be sequentially preheated, annealed, and intermediately held. Thereafter, when the inlet and the outlet of the heating furnace are common, the semiconductor wafer is taken out of the heating furnace via the second region and the first region from the third region. At the time of taking out, even if annealing is performed in a 2nd area | region, it does not need to be performed. When annealing is performed, one semiconductor wafer is annealed twice. When the second annealing is not performed in the second area, the power of the lamp heater is cut off in the second area. The semiconductor wafer returned to the first region may be heated again at a preheating temperature, or the power supply to the lamp heater may be cut off to rapidly cool the semiconductor wafer.

In the present invention, the lamp heater sets the time immediately before the semiconductor wafer enters the second region, that is, as close to the entry point as possible, and the power is turned on. In addition, the lamp heater needs to be energized while the semiconductor wafer moves the second region. That is, when the lamp heater in the second region is always energized or when the second temperature profile is generated by energizing for at least one minute, heat can be conducted to the first and third regions, thereby forming a steep temperature peak. none. Similarly, in the second region, after the semiconductor wafer has passed through the second region, it is necessary to cut off the power switch or to drop the current rapidly, thereby invalidating the profile of the second temperature.

The semiconductor wafer moves the second region at a speed of usually 3 to 30 cm / second. In addition, the length of the second region is preferably set slightly larger than the diameter of the semiconductor wafer. The surface temperature of the semiconductor wafer moving in the second region is slightly lower than the temperature in the furnace, and the difference is enlarged when the moving speed of the semiconductor wafer increases.

As described above, the semiconductor wafer always moves in the second region. Therefore, even if the width | variety of the peak temperature T21 or 30P (FIG. 8 or 16B) mentioned later is very thin linear, the whole surface of a semiconductor wafer is scanned at peak temperature T21 or 30P. By the way, the thermal budget of a semiconductor wafer differs locally in one semiconductor wafer due to the heat conduction in the material of the semiconductor wafer itself which is moving. That is, the thermal budget of the rear end part of the semiconductor wafer which is separated from the 2nd area | region from the latest and moves to a 3rd area | region is larger than another site | part. In order to compensate for such local thermal budget differences, it is preferable that the semiconductor wafer is once held in the third region and heated uniformly. However, when the annealing time is long, the heating of the third region can be stopped when the semiconductor wafer is once held in the third region.

In the substrate heat treatment apparatus and the substrate heat treatment method of the present invention, the heating light from the second heating means which is the lamp heater in the second region is heated by using a condensing lens extending in a direction orthogonal to the moving direction of the substrate. The substrate can be skin-heated to the required temperature in a short time only by supplying the required minimum current to the second heating means. As a result, the running cost of the device is greatly reduced. In addition, the substrate heat treatment apparatus and the substrate heat treatment method of the present invention perform heating by irradiating the heating light with a direction perpendicular to the moving direction with respect to the moving substrate in accordance with the temperature profile of the second region. By adjusting the speed, the time within the range of 0.1 second to 30 seconds can be arbitrarily selected and heat-treated. In addition, since the substrate heat treatment apparatus and the substrate heat treatment method of the present invention do not use a hot plate, it is possible to shorten the entire processing time.

In addition, it is the lamp heater arrange | positioned in a narrow linear region which generate | occur | produces peak temperature in a 2nd area | region. Therefore, the number of this lamp heater is remarkably smaller than the conventional FLA. As a result, the maintenance cost is greatly reduced.

Therefore, the present invention can be applied to many processes other than those in which MSA is required in the manufacturing process of a semiconductor device having a gate width of 35 nm.

1 is a plan sectional view of a horizontal substrate heat treatment apparatus of the first embodiment.
It is a longitudinal cross-sectional view of the horizontal substrate heat processing apparatus of 1st Embodiment.
3 is a perspective partial cross-sectional view near the second region in the horizontal substrate heat treatment apparatus of the first embodiment.
4 is an enlarged longitudinal sectional view of a second region in the horizontal substrate heat treatment apparatus of the first embodiment.
5 is a control block diagram of the horizontal substrate heat treatment apparatus of the first embodiment.
FIG. 6 is an explanatory diagram of a heat treatment profile stored in a heat treatment profile storage unit in the horizontal substrate heat treatment apparatus of the first embodiment. FIG.
7 is a flowchart of a heat treatment in the horizontal substrate heat treatment apparatus of the first embodiment.
It is explanatory drawing of the quartz surface temperature and board | substrate surface temperature in the horizontal substrate heat processing apparatus of 1st Embodiment.
It is explanatory drawing of the measurement result of the quartz surface temperature and the semiconductor wafer surface temperature in the horizontal substrate heat processing apparatus of 1st Embodiment.
It is explanatory drawing of the measurement result of the quartz surface temperature and the liquid crystal substrate surface temperature in the case where the board | substrate heat treatment apparatus of 1st Embodiment is applied to the heat processing of the liquid crystal substrate.
11A and 11B are longitudinal cross-sectional views in a second region of a modification of the horizontal substrate heat treatment apparatus of the first embodiment.
It is a longitudinal cross-sectional view of the vertical substrate heat processing apparatus of 2nd Embodiment.
It is a longitudinal cross-sectional view of the horizontal substrate heat processing apparatus of 3rd Embodiment.
14A is a longitudinal cross-sectional view of the horizontal substrate heat treatment apparatus of the fourth embodiment, and FIG. 14B is a longitudinal cross-sectional view of the horizontal substrate heat treatment apparatus of the fifth embodiment.
It is a longitudinal cross-sectional view parallel to the semiconductor wafer surface of the vertical substrate heat processing apparatus of 6th Embodiment.
FIG. 16A is a longitudinal cross-sectional view orthogonal to the semiconductor wafer surface of the vertical substrate heat treatment apparatus of the sixth embodiment, and FIG. 16B is a diagram illustrating furnace temperatures in the first to third regions of the vertical substrate heat treatment apparatus of the sixth embodiment. It is explanatory drawing.
17 is an enlarged cross-sectional view of a lamp heater used in the vertical substrate heat treatment apparatus of the sixth embodiment.
18A and 18B are explanatory diagrams of operations of a heater at the time of advancing and retracting the semiconductor wafer in the vertical substrate heat treatment apparatus of the sixth embodiment.
19 is a diagram illustrating a relationship between a temperature and a heating time of a semiconductor wafer according to a conventional FLA.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[First Embodiment]

1 is a plan sectional view of the horizontal substrate heat treatment apparatus 10 of the first embodiment. FIG. 2: is a longitudinal cross-sectional view of the horizontal substrate heat processing apparatus 10 of 1st Embodiment. In the substrate heat treatment apparatus 10, the skin of the substrate 12 which is a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate can be heat-treated. In addition, in the following description, "skin" means the surface layer of the board | substrate 12 when the board | substrate 12 is a semiconductor wafer, and a glass substrate when the board | substrate 12 is a board | substrate for liquid crystals or a board | substrate for solar cells. Or suppose that it is the uppermost layer of the layer formed on the insulated substrate. The diameter of the semiconductor wafer is not particularly limited and may be 300 mm or 450 mm in diameter. Moreover, it does not specifically limit about the thickness of the liquid crystal substrate. Usually, in the liquid crystal substrate, the thickness of the glass substrate is 1.5 to 2 mm, and an amorphous silicon layer is formed on the glass substrate. When the board | substrate 12 is a liquid crystal substrate, an amorphous silicon layer formed on the glass substrate can be converted into a polysilicon layer by performing a skin heating process. In the case where the substrate 12 is a substrate for solar cells, the film quality of the amorphous silicon layer formed on the insulating substrate and the conversion from the amorphous silicon layer to the polysilicon layer can be performed by performing a skin heating treatment.

The board | substrate heat treatment apparatus 10 is an apparatus which horizontally moves the board | substrate 12 which has the heat processing surface 12a facing up to the arrow X direction which is a moving direction, and heat-processes the board | substrate 12. FIG. The substrate heat treatment apparatus 10 is disposed at both ends of the quartz tube 14 and the quartz tube 14 forming the heating space of the substrate 12, and moves in the vertical direction (FIG. 2, arrow Z direction). Gate 16a, 16b which opens and closes the entrance and exit of 12 is provided. In this substrate heat treatment apparatus 10, the substrate 12 processed in the pretreatment step is loaded into the quartz tube 14 from the left side (one end side) in FIGS. 1 and 2, and the skin of the substrate 12 is heated. After processing, it is carried out from the right side (the other end side) and supplied to the next step.

The quartz tube 14 forms the flat path which accommodates the board | substrate 12 in a horizontal state. The width D in the vertical direction (arrow Z direction) of the heating space of the quartz tube 14 is set to be narrower than the width W in the horizontal direction (arrow Y direction) of the heating space. The board | substrate 12 is hold | maintained by the ring-shaped board | substrate holder 20 fixed to the edge part of the rod 18, and moves the inside of the quartz tube 14 to arrow X direction.

In the internal space of the quartz tube 14, the first region 22, the second region 24, and the third region 26 are formed from the gate 16a side of the inlet toward the gate 16b side of the outlet. . In the first region 22, the substrate 12 is heated to a first temperature (preliminary heating temperature). In the second region 24, the skin of the substrate 12 heated to the first temperature is heated to the second temperature (anneal temperature). In the third region 26, the substrate 12 heated to the second temperature is kept heated at the third temperature (secondary heating temperature). Inside the quartz tube 14, a temperature detector 28 for detecting the substrate temperature of the first region 22, a temperature detector 30 for detecting the substrate temperature of the second region 24, and a third region 26. The temperature detector 32 which detects the substrate temperature of (circle) is arrange | positioned. As the temperature detectors 28, 30 and 32, for example, a pyrometer which detects the color temperature of the skin of the substrate can be used. Further, inside the quartz tube 14, a gas ejector 34 for supplying an atmosphere gas or a purge gas is disposed close to the gate 16b on the outlet side.

In the vicinity of the outer wall portion of the first region 22 of the quartz tube 14, the heating light is opposed to the upper and lower surfaces of the substrate 12 to heat the substrate 12 of the first region 22 to a first temperature. First lamp heaters 36a and 36b (first heating means) for emitting R are arranged. Moreover, near the outer wall part of the 1st area | region 22, the 1st lamp heater 36c, 36d (1st heating means) which injects heating light R toward the side peripheral part of the board | substrate 12 is arrange | positioned. do. In the vicinity of the outer wall portion of the second region 24 of the quartz tube 14, the surface of the substrate 12 of the second region 24 is heated to face the upper and lower surfaces of the substrate 12 to heat to the second temperature. Second lamp heaters 38a and 38b (second heating means) for emitting light R are disposed. In the vicinity of the outer wall portion of the third region 26 of the quartz tube 14, the heating light is opposed to both upper and lower surfaces of the substrate 12 in order to heat and maintain the substrate 12 of the third region 26 at a third temperature. Third lamp heaters 40a and 40b (third heating means) for emitting (R) are arranged. Further, in the vicinity of the outer wall portion of the third region 26, third lamp heaters 40c and 40d (third heating means) for emitting the heating light R to face the side circumference of the substrate 12 are disposed. do. The first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and the third lamp heaters 40a to 40d are arranged in the form of a plurality of halogen lamps 42 (Figs. 3 and 4). It is provided.

3 is a perspective partial cross-sectional view of the vicinity of the second region 24 in the horizontal substrate heat treatment apparatus 10 of the first embodiment. 4 is an enlarged longitudinal cross-sectional view of the second region 24 in the horizontal substrate heat treatment apparatus 10 of the first embodiment.

A plurality of cylindrical lenses 44a to 44c (condensing lenses) are disposed on the outer wall surface 15 of the quartz tube 14 facing the center portion in the arrow X direction of the lamp heater 38a. The cylindrical lenses 44a to 44c are parallel to the heat treatment surface 12a of the upper surface of the substrate 12 carried in the second region 24 and are arrow Y direction orthogonal to the arrow X direction, which is the moving direction of the substrate 12. Extends. The cylindrical lenses 44a to 44c have a flat convex lens shape in cross section, and the flat portion thereof is fixed in close contact with the outer wall surface of the quartz tube 14. The cylindrical lenses 44a to 44c have a light condensing characteristic only in a direction orthogonal to the extending direction, and the heating light R emitted from the halogen lamp 42 with respect to the substrate 12 and the moving direction of the substrate 12. It irradiates in the direction orthogonal and can be formed from quartz which is the same material as the quartz tube 14.

The length in the arrow Y direction of the cylindrical lenses 44a to 44c is set slightly longer than the diameter of the substrate 12 in order to uniformly heat the heat treated surface 12a of the substrate 12 with respect to the arrow Y direction. For example, when the board | substrate 12 is a semiconductor wafer and the diameter of the board | substrate 12 is 300 mm, it is preferable to set the length of cylindrical lenses 44a-44c about 400 mm.

FIG. 5 is a control block diagram of the horizontal substrate heat treatment apparatus 10 of the first embodiment.

In the substrate heat treatment apparatus 10, the operation control of the entire heat treatment is performed by the controller 46. The control section 46 includes a substrate moving section 48, a position detecting section 50, a heat treatment profile storage section 52, first lamp heaters 36a to 36d, second lamp heaters 38a and 38b, and The third lamp heaters 40a to 40d and the temperature detectors 28, 30 and 32 are connected.

The substrate moving unit 48 moves the substrate 12 from the first region 22 to the third region 26 through the second region 24. The board | substrate moving part 48 moves the board | substrate 12 in the quartz tube 14 at the moving speed set to the heat processing profile mentioned later. The position detection unit 50 detects the position of the substrate 12 in the quartz tube 14. The heat treatment profile is stored in the heat treatment profile storage 52. The control part 46 controls the 1st lamp heaters 36a-36d, the 2nd lamp heaters 38a, 38b, and the 3rd lamp heaters 40a-40d according to the electric current value set to the heat processing profile.

The temperature detectors 28, 30, and 32 detect the temperature of the heat treatment surface 12a. The control part 46 is the 1st lamp heater 36a-36d and the 2nd lamp heater 38a so that the temperature detected by the temperature detector 28, 30, and 32 may become the semiconductor wafer target temperature set to the heat processing profile. , 38b) and the third lamp heaters 40a to 40d.

FIG. 6: is explanatory drawing of the heat processing profile memorize | stored in the heat processing profile memory | storage part 52 in the horizontal substrate heat processing apparatus 10 of 1st Embodiment.

The heat treatment profile is set corresponding to each pretreatment process of the substrate 12 carried in the substrate heat treatment apparatus 10. For example, when the pretreatment step is a step of performing ion implantation treatment on the substrate 12 (ion implantation 1), the current i11 supplied to the first lamp heaters 36a to 36d and the second lamp are applied to the heat treatment profile. The current i21 supplied to the heaters 38a and 38b, the current i31 supplied to the third lamp heaters 40a to 40d, and the movement of the substrate 12 in the quartz tube 14 supplied to the substrate moving unit 48. The speed v1 is set. In the heat treatment profile, the semiconductor wafer target temperatures T11, T21, and T31 of the substrate 12 in the first region 22, the second region 24, and the third region 26 are set. The temperature of the heat treatment surface 12a includes the currents i11, i21, i31 supplied to the first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and the third lamp heaters 40a to 40d, and the substrate. It is determined by the moving speed v1 of (12). Similarly, when the pretreatment step is a step of ion implantation 2 to 5, currents i12 to i35, moving speeds v2 to v5, and semiconductor wafer target temperatures T12 to T35 are set.

When the pretreatment step is a step (CVD1) of performing a CVD process on the substrate 12 which is a semiconductor wafer, the current i16 supplied to the first lamp heaters 36a to 36d and the second lamp heaters 38a and 38b are supplied. The current i26 to be supplied, the current i36 to be supplied to the third lamp heaters 40a to 40d, the moving speed v6 of the substrate 12 to be supplied to the substrate moving part 48, the first region 22, and the second region. The semiconductor wafer target temperatures T16, T26, and T36 of the 24 and the third region 26 are set. Similarly, when the pretreatment process is a process of CVD 2 to 5, the currents i17 to i310, the moving speeds v7 to v10 and the semiconductor wafer target temperatures T17 to T310 are set.

In the case where the pretreatment step is a step of sputtering the substrate 12 which is a semiconductor wafer (sputter 1), the current i111 supplied to the first lamp heaters 36a to 36d and the second lamp heaters 38a and 38b. The current i211 to be supplied, the current i311 to be supplied to the third lamp heaters 40a to 40d, the moving speed v11 of the substrate 12 to be supplied to the substrate moving part 48, the first region 22, and the second. The semiconductor wafer target temperatures T111, T211, and T311 of the region 24 and the third region 26 are set. Similarly, when the pretreatment step is a step of sputters 2 to 5, the currents i112 to i315, the moving speeds v12 to v15 and the semiconductor wafer target temperatures T112 to T315 are set.

When the pretreatment step is a step (deposition 1) of performing a deposition process on the substrate 12, the current i116 supplied to the first lamp heaters 36a to 36d and the current supplied to the second lamp heaters 38a and 38b. i216, current i316 supplied to third lamp heaters 40a to 40d, movement speed v16 of substrate 12 supplied to substrate moving part 48, first region 22, second region 24 ) And the semiconductor wafer target temperatures T116, T216, and T316 of the third region 26 are set. Similarly, when the pretreatment process is a process of depositions 2 to 5, currents i117 to i320, moving speeds v17 to v20, and semiconductor wafer target temperatures T117 to T320 are set. In this way, the current and the moving speed supplied to the first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and the third lamp heaters 40a to 40d are appropriately set according to the type of pretreatment step. do.

Next, the heat processing of the board | substrate 12 using the board | substrate heat processing apparatus 10 is demonstrated.

7 is a flowchart of a heat treatment in the horizontal substrate heat treatment apparatus 10 according to the first embodiment.

The control part 46 opens the gate 16a of the inlet side of the board | substrate heat treatment apparatus 10, and moves the board | substrate holder 20 which hold | maintains the board | substrate 12 which the preprocessing process is complete | finished (the arrow X direction) (FIG. 2, the board | substrate 12 is carried in to the 1st area | region 22 of the one end side of the quartz tube 14, and the gate 16a is closed (step S1).

Next, the control part 46 reads the heat processing profile corresponding to the preprocessing process of the board | substrate 12 from the heat processing profile memory | storage part 52 (step S2), 1st lamp heaters 36a-36d, and 2nd The lamp heaters 38a and 38b and the third lamp heaters 40a to 40d are controlled (step S3). Moreover, the control part 46 controls the board | substrate moving part 48 according to the read heat processing profile (step S4), and moves the board | substrate 12 to arrow X direction.

For example, when the pretreatment process of the substrate 12 is the process of ion implantation 1 (FIG. 6), the controller 46 supplies current i11 to the first lamp heaters 36a to 36d and the second lamp heater ( The current i21 is supplied to 38a and 38b, the current i31 is supplied to the third lamp heaters 40a to 40d, and the substrate 12 is moved at the moving speed v1 in the arrow X direction.

The board | substrate 12 which moves inside the quartz tube 14 to arrow X direction is heat-processed at a desired temperature in the 1st area | region 22, the 2nd area | region 24, and the 3rd area | region 26 (step S5). ).

FIG. 8: is explanatory drawing of the quartz surface temperature and board | substrate surface temperature in the horizontal substrate heat processing apparatus 10 of 1st Embodiment. In addition, the substrate surface temperature is, for example, the temperature of the heat treatment surface 12a of the surface layer of the semiconductor wafer when the substrate 12 is a semiconductor wafer, and the substrate surface temperature when the substrate 12 is a liquid crystal substrate or a solar cell substrate. It is the temperature of the heat processing surface 12a of the uppermost layer of the layer formed on (12).

For example, when the pretreatment process of the substrate 12 is the process of ion implantation 1, the first lamp heaters 36a to 36d supplied with the current i11 based on the selected heat treatment profile emit the heating light R to the halogen lamp. It ejects from (42), and heats the surface of the quartz tube 14 in the 1st area | region 22 to temperature T1 (FIG. 8 (a)). And the heat processing surface 12a is preheated uniformly to the temperature T11 by the heating light R which permeate | transmitted the 1st area | region 22 by the quartz tube 14 (FIG. 8 ( b)). The temperature detector 28 may detect the temperature T11 at predetermined time intervals based on the radiation light r from the substrate 12. And the control part 46 may adjust suitably by feedback control so that the detected temperature T11 may be the semiconductor wafer target temperature T11 of the 1st area | region 22 set to the heat processing profile.

In addition, when the pretreatment process of the substrate 12 is the process of ion implantation 1, the second lamp heaters 38a and 38b supplied with the current i21 based on the selected heat treatment profile emit the heating light R to the halogen lamp 42. ), The surface of the quartz tube 14 in the second region 24 is heated to a temperature T2 (Fig. 8 (a)). Subsequently, the heating light R heats the atmosphere of the second region 24 in the quartz tube 14, and in the cylindrical lenses 44a to 44c disposed in the center portion in the moving direction of the substrate 12. It collects and irradiates to the heat processing surface 12a. After the preheating in the first region 22, the substrate 12 moving the second region 24 has the heat-treated surface 12a by the heating light R condensed by the cylindrical lenses 44a to 44c. It heats up to temperature T21 higher than temperature T2 of the surface of the quartz tube 14 (FIG. 8 (b)). In this case, the substrate 12 is scanned by the heat-treated surface 12a in the direction of arrow X which is the moving direction of the substrate 12 by the condensed linear light beams (three in the configuration in FIG. 4). The entire surface of the heat treated surface 12a is subjected to skin heating to a substantially uniform temperature T21 (annealing temperature). In addition, in FIG. 8 (b), the temperature T21 of the heat treatment surface 12a of the second region 24 has three peaks: three cylindrical lenses arranged in the arrow X direction shown in FIG. It is because the heating light R is condensed at three places of the board | substrate 12 simultaneously by 44a-44c.

The temperature T21 of the heat treatment surface 12a in the second region 24 includes the current i21 supplied to the second lamp heaters 38a and 38b, the moving speed v1 of the substrate 12, and the cylindrical lenses 44a to. It is determined by the condensing magnification of 44c). The temperature detector 30 may detect the temperature T21 at predetermined time intervals based on the radiation light r from the substrate 12. And the control part 46 may adjust suitably by feedback control so that the detected temperature T21 may become the semiconductor wafer target temperature T21 of the 2nd area | region 24 set to the heat processing profile.

In addition, when the pretreatment process of the board | substrate 12 is a process of the ion implantation 1, the 3rd lamp heater 40a-40d to which the electric current i31 was supplied based on the selected heat processing profile is the 1st lamp heater 36a ~. Similarly to 36d), the heating light R is emitted from the halogen lamp 42 to heat the surface of the quartz tube 14 in the third region 26 to the temperature T3. And the heat processing surface 12a is auxiliary-heated uniformly to the temperature T31 by the heating light R which permeate | transmitted the 3rd area | region 26 with the quartz tube 14 transmitted. The temperature detector 32 may detect the temperature T31 of the auxiliary heating at predetermined time intervals based on the radiation light r from the substrate 12. And the control part 46 may adjust suitably by feedback control so that the detected temperature T31 may become the semiconductor wafer target temperature T31 of the 3rd area | region 26 set to the heat processing profile.

When the heat treatment of the heat treatment surface 12a in the first region 22, the second region 24, and the third region 26 is completed, the controller 46 opens the gate 16b on the outlet side. After carrying out the board | substrate 12 to the next process process from the 3rd area | region 26 of the other end side, heat processing with respect to the next board | substrate 12 is started (step S6).

In addition, the temperature T11-T31 of the heat processing surface 12a in the 1st area | region 22, the 2nd area | region 24, and the 3rd area | region 26 shows that the pretreatment process with respect to the board | substrate 12 is an ion implantation process. In the case of the step, the surface of the quartz tube 14 in the first region 22, the second region 24 and the third region 26 so that T11 < T21, T31 < T21, and T11 &gt; It is preferable that the temperatures T1, T2 and T3 be set. In addition, when the pretreatment process with respect to the board | substrate 12 is a process of a CVD process, a sputtering process, or a vapor deposition process, the temperature T1 of the surface of the quartz tube 14 so that T11 <= T21, T31≤T21, and T11≥T31 , T2 and T3 are preferably set.

FIG. 9: is explanatory drawing of the measurement result of the quartz surface temperature and the semiconductor wafer surface temperature in the horizontal substrate heat processing apparatus 10 of 1st Embodiment when the board | substrate 12 is a semiconductor wafer. FIG. 9 shows the temperature of the surface of the quartz tube 14 in the first region 22, the second region 24, and the third region 26 in the pretreatment step of the substrate 12, and the first region. The specific relationship with the temperature of the heat processing surface 12a in the area | region 22, the 2nd area | region 24, and the 3rd area | region 26 is shown. In this case, when the pretreatment process is an ion implantation process for the substrate 12, in the first region 22, the substrate 12 is heated in the range of 300 to 450 ° C., and in the second region 24, the heat treatment surface ( 12a) is heated in the range of 800-1100 degreeC, and in the 3rd area | region 26, the board | substrate 12 is heated in the range of 200-400 degreeC. In addition, when the pretreatment process is any of CVD, sputtering, or deposition processing on the substrate 12, in the first region 22, the substrate 12 is heated in the range of 200 to 450 ° C., and the second region. In 24, the heat treatment surface 12a is heated in the range of 300 to 900 ° C, and in the third region 26, the substrate 12 is heated in the range of 200 to 400 ° C.

For example, in the case of improving the crystal defect of the ion implanted substrate 12 (ion implantation 1), the temperature T1 (first temperature) of the surface of the quartz tube 14 in the first region 22 is It is set at 450 ° C. In addition, the temperature T2 (second temperature) of the surface of the quartz tube 14 in the second region 24 is set to 500 ° C. In addition, temperature T3 (third temperature) of the surface of the quartz tube 14 in the 3rd area | region 26 is set to 400 degreeC. As for the board | substrate 12, the temperature T21 of the heat processing surface 12a becomes 1100 degreeC by the condensing action of cylindrical lenses 44a-44c, and the heat processing surface 12a rapidly epidermal-heats in the 2nd area | region 24. do. As a result, crystal defects of the semiconductor wafer can be improved very well.

When the film quality of the film formed on the substrate 12 by the CVD process is improved (CVD1), the temperature T1 (first temperature) of the surface of the quartz tube 14 in the first region 22 is 450. It is set to ° C. In addition, the temperature T2 (second temperature) of the surface of the quartz tube 14 in the second region 24 is set to 600 ° C. In addition, temperature T3 (third temperature) of the surface of the quartz tube 14 in the 3rd area | region 26 is set to 400 degreeC. As for the board | substrate 12, the temperature T21 of the heat processing surface 12a becomes 900 degreeC by the condensing action of cylindrical lenses 44a-44c, and the heat processing surface 12a rapidly epidermal-heats in the 2nd area | region 24. do. As a result, the film defects of the film produced on the substrate 12 can be improved very well.

The board | substrate heat treatment apparatus 10 of 1st Embodiment board | substrate the heat processing profile which controls the 1st lamp heaters 36a-36d, the 2nd lamp heaters 38a, 38b, and the 3rd lamp heaters 40a-40d. By suitably selecting according to the pretreatment process of (12), any pretreatment process can be optimally heat-processed with respect to the board | substrate 12. FIG. In addition, since the substrate heat treatment apparatus 10 heats the substrate 12 while moving it in the quartz tube 14, the film quality after film formation such as CVD, sputtering, deposition, etc. Appropriate heat treatment for improvement can be performed in a short time.

In addition, since the high heating temperature of the second region 24 is realized by the condensing action of the cylindrical lenses 44a to 44c, it is necessary to supply a large current to the halogen lamps 42 of the second lamp heaters 38a and 38b. There is no. Therefore, the operating cost of the board | substrate heat treatment apparatus 10 can be reduced significantly. In addition, since the halogen lamp 42 does not need to supply a large current, its life is long, and thus maintenance cost can be reduced. In addition, since the heating temperature of the heating light R emitted from the halogen lamp 42 is very stable, crystal defects and film quality defects of the heat treatment surface 12a can be satisfactorily improved.

In addition, the entire surface of the heat treatment surface 12a is not only uniformly heated at a predetermined temperature by heat treatment while moving the substrate 12, but also by placing the substrate 12 on a hot plate as in the prior art, for example. High speed heat processing can be realized as compared with the case of heat processing. In the second region 24, the heat treatment surface 12a is heated while scanning by the linear heating light R, so that the substrate as compared with the case where the entire surface of the heat treatment surface 12a is heated at one time. The range of the 2nd area | region 24 with respect to the movement direction (arrow X direction) of (12) can be made minimum. Accordingly, miniaturization of the substrate heat treatment apparatus 10 can be easily achieved.

Moreover, the board | substrate heat treatment apparatus 10 of 1st Embodiment is comprised so that the board | substrate 12 may be carried out from the right side after carrying in the quartz tube 14 from the left side and heat-processing as shown in FIG. 1 and FIG. It is. In this case, since the board | substrate heat treatment apparatus 10 can send and receive the board | substrate 12 efficiently with respect to the front-back processing process, it can further improve processing efficiency.

In addition, it is not necessary to always supply the first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and the third lamp heaters 40a to 40d according to the heat treatment profile shown in FIG. none. For example, the control part 46 detects the position of the board | substrate 12 which moves in the quartz tube 14 by the position detection part 50 connected to the board | substrate moving part 48. As shown in FIG. When the position detection unit 50 detects that the substrate 12 is disposed in the first region 22, the control unit 46 controls the first lamp heaters 36a to 36d and the third lamp heaters 40a to 40d. ) Supplies current i11. In addition, the controller 46 sets the current supplied to the second lamp heaters 38a and 38b to be less than the current i21, for example, less than half of the current i21. Subsequently, when the position detection unit 50 detects that the substrate 12 has moved to the second region 24, the control unit 46 supplies the current i21 to the second lamp heaters 38a and 38b. Moreover, the control part 46 sets the electric current supplied to the 1st lamp heaters 36a-36d to less than electric current i11, for example, to half or less of electric current i11. In addition, when it is detected by the position detection unit 50 that the substrate 12 has moved to the third region 26, the control unit 46 supplies the current supplied to the second lamp heaters 38a and 38b to the current i21. Less, for example, less than half the current i21.

Thus, by controlling the current supplied to the first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and the third lamp heaters 40a to 40d, the substrate 12 needs the minimum current required. It can heat-process efficiently. As a result, the running cost of the substrate heat treatment apparatus 10 can be reduced as much as possible.

FIG. 10: is explanatory drawing of the measurement result of the quartz surface temperature and the substrate surface temperature of a liquid crystal in the case where the board | substrate heat treatment apparatus 10 of 1st Embodiment is applied to the skin heat processing of the liquid crystal substrate.

For example, when the pretreatment process for the liquid crystal substrate is a process of forming an amorphous layer at 400 to 450 캜 on the glass substrate, the surface of the quartz tube 14 is 300 to 450 캜 in the first region 22. In the second region 24, the surface of the quartz tube 14 is heated to 300 to 450 캜, and in the third region 26, the surface of the quartz tube 14 is heated to 200 to 400 캜. On the other hand, the liquid crystal substrate carried in the quartz tube 14 is heated to 300 to 450 ° C in the first region 22. In the second region 24, the heat treatment surface of the epidermis is heated to 550 to 1100 ° C. by the light collecting action of the cylindrical lenses 44a to 44c in the liquid crystal substrate. In the third region 26, the liquid crystal substrate is heated to 200 to 400 ° C. By condensing the heating light R in this manner and irradiating the moving liquid crystal substrate, only the heat treated surface of the outer surface of the liquid crystal substrate is heated to a desired temperature, so that the amorphous silicon layer is subjected to the epidermal heating without affecting the glass substrate. To a polysilicon layer.

11A and 11B are longitudinal cross-sectional views in the second region 24 of the modification of the horizontal substrate heat treatment apparatus 10 of the first embodiment.

11A shows the focal positions f1 to f3 of the cylindrical lenses 54a to 54c arranged in the movement direction (arrow X direction) of the substrate 12 in the arrow Z direction, and the focal point between the focal positions f1 and f3 is in focus. It is set so that a desired heating temperature can be obtained at the position f2. When the board | substrate 12 moves to arrow X direction, when a position of the board | substrate 12 changes to Z direction, there exists a possibility that a heating nonuniformity may arise in the heat processing surface 12a. The heat treatment surface 12a of the substrate 12 is sufficiently expected to pass between the focal positions f1 to f3 by configuring the cylindrical lenses 54a to 54c as shown in FIG. 11A. Therefore, in the structure shown in FIG. 11A, even if the board | substrate 12 fluctuates and conveys in the arrow Z direction, a heating nonuniformity can be prevented and the heat processing surface 12a can be processed uniformly at desired heating temperature.

FIG. 11B shows a modification in which the second lamp heaters 38a and 38b and one cylindrical lens 44 are used. In this modified example, the heating light R emitted from the upper second lamp heater 38a is arranged in one cylindrical lens 44 disposed in the center portion of the moving direction (arrow X direction) of the substrate 12. Only the light is concentrated and irradiated onto the heat treatment surface 12a. FIG. 8C shows a heat treatment surface 12a of the first region 22, the second region 24, and the third region 26 of the substrate 12 heated based on the modification of FIG. 11B. The temperatures T11, T21 and T31 are shown.

In this case, the control part 46 sets the electric current supplied to the 2nd lamp heater 38a large, and / or sets the condensing magnification of the cylindrical lens 44 higher than the condensing magnification of the cylindrical lenses 44a-44c. Thereby, the heat processing surface 12a can be heat-processed at the processing speed equivalent to the case where three cylindrical lenses 44a-44c are used. In addition, the heat processing time of the board | substrate 12 can be shortened by making the movement distance of the board | substrate 12 short by reducing the width | variety of the arrow X direction of the 2nd lamp heater 38a. Moreover, the board | substrate heat treatment apparatus 10 can be comprised compact by reducing the width | variety of the arrow X direction of the 2nd lamp heater 38a.

In addition, the line width of the heating light R formed on the heat treatment surface 12a using the second lamp heater 38a and the cylindrical lenses 44a to 44c or 44 is a heat treatment rate required for the substrate 12. Can be suitably selected according to the heating temperature and the dimension of the arrow X direction required for the substrate heat treatment apparatus 10. For example, the line width of the heating light R can be set small when the heat treatment surface 12a can be rapidly heated, and can be set large when rapid heating is difficult.

Similarly, the moving speed of the substrate 12 can be appropriately selected according to the heat treatment rate and heating temperature required for the substrate 12. For example, the moving speed of the board | substrate 12 can be set to low speed, when it is difficult to heat the heat processing surface 12a rapidly, and to high speed, when rapid heating is possible. Moreover, it is preferable to set the moving speed of the board | substrate 12 in the range of 3-30 cm / sec with respect to each board | substrate 12 of a semiconductor wafer, a liquid crystal substrate, and a solar cell substrate.

The cylindrical lenses 44a to 44c, 44 and 54a to 54c are mounted on the outer wall surface 15 of the quartz tube 14, but may be mounted on the inner wall surface of the quartz tube 14, and the quartz tube 14 ) May be integrally formed. The cylindrical lenses 44a to 44c and 44 and 54a to 54c can also be provided on both sides of the outer wall surface 15 and the inner wall surface. In addition, although cylindrical lenses 44a-44c, 44, 54a-54c were demonstrated as having a flat convex lens shape in cross section, it is also possible to make a cross-sectional shape into a biconvex lens shape.

In the case where the cylindrical lenses 44a to 44c, 44, 54a to 54c are formed separately from the quartz tube 14, the cylindrical lenses 44a to 44c and 44a to 54c may be bonded to the quartz tube 14 using a heat resistant adhesive. Further, when the cylindrical lenses 44a to 44c, 44, 54a to 54c have a cross-sectional shape in the shape of flat convex lenses, the outer wall faces the planar side of the cylindrical lenses 44a to 44c, 44, 54a to 54c without passing through the air layer. It is possible to realize the state of engagement with the quartz tube 14 only by bringing it into close contact with (15). The cylindrical lenses 44a to 44c and 44 and 54a to 54c may be formed integrally with the quartz tube 14 by processing the quartz tube 14.

In addition, in the modification shown in FIG. 11A, by changing the focal positions f1 to f3 of the cylindrical lenses 54a to 54c in the direction of the arrow Z, heating unevenness caused by fluctuations in the vertical direction of the substrate 12 is suppressed. have. On the other hand, the cylindrical lenses 44a to 44c or 44 have cylindrical depths 54a to 54c by setting depth of focus within an allowable range of the light condensation magnification capable of sufficiently heating the heat treatment surface 12a of the substrate 12. It is possible to suppress the heating unevenness of the heat treatment surface 12a caused by the fluctuation in the vertical direction of the substrate 12 without setting a plurality of focal positions f1 to f3 as shown in FIG.

The heating temperature of the heat treatment surface 12a is based on the heating profile stored in the heat treatment profile storage 52, and thus the first lamp heaters 36a to 36d, the second lamp heaters 38a and 38b, and the third lamp. Although it demonstrated as controlling the electric current supplied to heater 40a-40d, and the moving speed of the board | substrate 12, it is not limited to this. For example, the cylindrical lenses 44a to 44c, 44 and 54a to 54c may be replaced with ones having different magnifications depending on the required heating temperature of the heat treatment surface 12a.

In addition, as a heating means used for heating the substrate 12 in the first region 22 and the third region 26, the first lamp heaters 36a to 36d and the third lamp heaters 40a to 40d are used. Instead, for example, an electric resistance heater may be used.

[Second Embodiment]

FIG. 12: is a longitudinal cross-sectional view of the vertical substrate heat processing apparatus 60 of 2nd Embodiment. In the substrate heat treatment apparatus 60, heat treatment can be performed on the substrate 12, which is a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate.

The board | substrate heat processing apparatus 60 is comprised by arrange | positioning the quartz tube 62 which forms the heating space for heating two board | substrates 12 simultaneously. The upper end of the quartz tube 62 is closed and forms a flat path for accommodating the two substrates 12 in an upright state. The two substrates 12 are fixed in a state of being clamped to the substrate holder 64 toward the quartz tube 62 side facing the heat treatment surface 12a, and are lifted by the lifter 68 through the bottom plate 66. It is arrange | positioned so that lifting in the Z direction is possible. In the quartz tube 62, a gas ejector 70 for supplying an atmosphere gas or a purge gas is disposed.

In the outer wall portion of the quartz tube 62, first lamp heaters 74a and 74b for heating the first region 72 from the lower side, second lamp heaters 78a and 78b for heating the second region 76, and Auxiliary lamp heaters 82a and 82b for heating the auxiliary region 80 are disposed. Cylindrical lenses 84a to 84c and 86a to 86c are mounted on the outer wall surfaces 63a and 63b of the quartz tube 62 to face the second lamp heaters 78a and 78b. The cylindrical lenses 84a to 84c and 86a to 86c have the property of condensing the heating light R emitted from the second lamp heaters 78a and 78b in the direction of the arrow Z. The cylindrical lenses 84a to 84c and 86a to 86c are directions parallel to the heat treatment surface 12a of the substrate 12 and extend in a direction orthogonal to the moving direction (arrow Z direction) of the substrate 12.

In the substrate heat treatment apparatus 60, the first region 72 corresponds to the first region 22 and the third region 26 of the substrate heat treatment apparatus 10 of the first embodiment, and the second region ( 76 corresponds to the second region 24 of the substrate heat treatment apparatus 10 of the first embodiment. The auxiliary region 80 is a region for maintaining the temperature at the upper end side of the substrate 12 conveyed to the second region 76 at a predetermined heating temperature, and may be omitted depending on the temperature conditions.

Two board | substrates 12 fixed to the board | substrate holder 64 are carried in to the 1st area | region 72 of the lower side of a perpendicular direction, and ejected from the 1st lamp heater 74a, 74b in the 1st area | region 72. FIG. It is preheated by heating light R which becomes. Subsequently, the substrate 12 moves to the second region 76 on the vertical upper end side. In the second region 76, the heating light R emitted from the second lamp heaters 78a and 78b is collected by the cylindrical lenses 84a to 84c and 86a to 86c and irradiated onto the respective substrates 12. . As a result, the heat treatment surfaces 12a of the two substrates 12 are simultaneously heated at a desired heating temperature higher than that of the first region 72. In addition, during the heat treatment, the auxiliary lamp heaters 82a and 82b maintain the temperature of the upper auxiliary region 80 at a predetermined temperature. When the heat treatment in the second region 76 is completed, the substrate 12 is lowered to the first region 72 again, heated, and then transported to the outside to finish the heat treatment.

As described above, the substrate heat treatment apparatus 60 performs the heat treatment by reciprocating the substrate 12 up and down, so that the upper auxiliary region 80 is in a required minimum range, and the size of the apparatus in the height direction is reduced. Can be achieved. In addition, as the movement distance of the substrate 12 is shortened, the processing time required for the heat treatment is also shortened. In addition, since the substrate heat treatment apparatus 60 is vertical, there is an advantage that the occupied floor area is reduced.

In addition, the board | substrate heat treatment apparatus 60 of 2nd Embodiment can be variously modified similarly to the board | substrate heat treatment apparatus 10 of 1st Embodiment.

For example, the first lamp heaters 74a and 74b, the second lamp heaters 78a and 78b, and the auxiliary lamp heaters 82a and 82b are formed by controlling a current to be supplied depending on the position of the substrate 12. 12) can be heated efficiently with the minimum current required.

In addition, the cylindrical lenses 84a to 84c and 86a to 86c that collect the heating light R emitted from the second lamp heaters 78a and 78b are similar to the cylindrical lenses 54a to 54c shown in FIG. 11A. By changing the focal position, it is possible to suppress the heating unevenness of the heat treatment surface 12a due to the positional change during the movement of the substrate 12.

In addition, the number of cylindrical lenses 84a-84c and 86a-86c can be suitably changed with the required line width of the heating light R irradiated to the board | substrate 12, and the required moving speed of the board | substrate 12. As shown in FIG. Moreover, it is preferable to set the moving speed of the board | substrate 12 in the range of 3-30 cm / sec with respect to each board | substrate 12 of a semiconductor wafer, a liquid crystal substrate, and a solar cell substrate.

In addition, the cylindrical lenses 84a to 84c and 86a to 86c are mounted on the inner wall surface of the quartz tube 62, or mounted on both of the outer wall surfaces 63a and 63b and the inner wall surface, or the quartz tube 62 and the like. You may form integrally. The shapes of the cylindrical lenses 84a to 84c and 86a to 86c may be flat convex lens shapes or may be biconvex lens shapes as in the case of the first embodiment.

In addition, as heating means for heating the board | substrate 12 in the 1st area | region 72 and the auxiliary area | region 80, it replaces with the 1st lamp heater 74a, 74b and the auxiliary lamp heater 82a, 82b. For example, an electric resistance heater or the like can be used.

[Third embodiment]

FIG. 13: is a longitudinal cross-sectional view of the horizontal substrate heat processing apparatus 200 of 3rd Embodiment. In the substrate heat treatment apparatus 200, heat treatment may be performed on the substrate 12, which is a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate.

The substrate heat treatment apparatus 200 horizontally moves the substrate 12 in the arrow X direction while the heat treatment surface 12a is oriented vertically downward, and moves the heat treatment surface 12a of the substrate 12 from the vertical downward direction. It is a device for heat treatment. The substrate heat treatment apparatus 200 includes a quartz tube 214 and gates 216a and 216b disposed at both ends of the quartz tube 214. The board | substrate 12 is hold | maintained around the heat processing surface 12a by the board | substrate holder 220 fixed to the edge part of the rod 218, and moves the inside of the quartz tube 214 to arrow X direction.

The quartz tube 214 has a first region 222 for heating the substrate 12 to a preliminary heating temperature (first temperature), and a second region for heating the heat treatment surface 12a to an annealing temperature (second temperature) ( A third region 226 is formed that heats 224 and substrate 12 to an auxiliary heating temperature (third temperature). The temperature of the heat treatment surface 12a of the first region 222, the second region 224, and the third region 226 is detected by the temperature detectors 228, 230, and 234. In addition, a gas ejector 234 for supplying an atmosphere gas or a purge gas is disposed inside the quartz tube 214. First lamp heaters 236a and 236b (first heating means) near upper and lower outer wall portions of the quartz tube 14 in the first region 222, the second region 224, and the third region 226. , Second lamp heaters 238a and 238b (second heating means) and third lamp heaters 240a and 240b (third heating means) are disposed.

On the inner wall surface 215 of the quartz tube 214 in the second region 224, a plurality of cylindrical lenses 244a disposed below the substrate 12 and heating the heat treatment surface 12a from the vertical lower direction. To 244c) (condensing lens). The cylindrical lenses 244a to 244c are parallel to the heat treatment surface 12a of the substrate 12 and extend in the horizontal direction orthogonal to the arrow X direction. The cylindrical lenses 244a to 244c have condensing properties only in the direction orthogonal to the extending direction, and the heating light R is orthogonal to the moving direction (arrow X direction) of the substrate 12 with respect to the heat treatment surface 12a. Investigate in the direction.

In the substrate heat treatment apparatus 200 configured as described above, the substrate 12 is carried into the first region 222 through the gate 216a of the quartz tube 214. The substrate 12 carried in the first region 222 is heated to the preliminary heating temperature by the first lamp heaters 236a and 236b. Subsequently, the substrate 12 moves to the second region 224, and the upper surface side of the substrate 12 is heated by the second lamp heater 238a. Further, in the second region 224, the heating light from the second lamp heater 238b in which the heat treatment surface 12a of the substrate 12 moving in the arrow X direction is collected by the cylindrical lenses 244a to 244c ( R) is heated from the vertical downward direction to the annealing temperature.

In this case, since the atmosphere in the quartz tube 214 heated by the heating light R in the quartz tube 214 expands, it is going to rise. However, since the heated atmosphere is blocked by the substrate 12 and does not run upward, it remains on the heat treatment surface 12a of the lower surface. Therefore, diffusion of heat as the heated atmosphere rises is suppressed by the substrate 12, and the heat treatment surface 12a is efficiently heated by the heating light R. As shown in FIG. In addition, since the heated atmosphere stays on the heat treatment surface 12a, a large temperature gradient does not occur along the heat treatment surface 12a. As a result, the heat treatment surface 12a is uniformly heated to the desired annealing temperature with a small heating energy for a short time evenly.

In the second region 224, the substrate 12 heated to the desired annealing temperature of the entire surface of the heat treatment surface 12a moves to the third region 226. Subsequently, the substrate 12 is heated to the auxiliary heating temperature in the second region 224 and then carried out to the next processing process through the gate 216b. Moreover, it is preferable to set the moving speed of the board | substrate 12 in the range of 3-30 cm / sec with respect to each board | substrate 12 of a semiconductor wafer, a liquid crystal substrate, and a solar cell substrate.

[Fourth Embodiment]

14A is a longitudinal section of the horizontal substrate heat treatment apparatus 250 of the fourth embodiment. In the substrate heat treatment apparatus 250, heat treatment may be performed on the substrate 12, which is a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate.

The substrate heat treatment apparatus 250 is a device that supports the substrate 12 in a vertical state, moves the inside of the quartz tube 252 in the horizontal direction, and heat-treats the heat treatment surface 12a from the horizontal direction. In the upper part of the quartz tube 252, the gas ejector 253 for supplying atmospheric gas or purge gas is arrange | positioned. First lamp heaters 254a and 254b (first heating means) on both sides of the quartz tube 252 in the first region, the second region, and the third region from the carrying in side to the carrying out side of the substrate 12. The second lamp heaters 256a and 256b (second heating means) and the third lamp heaters 258a and 258b (third heating means) are sequentially arranged. Between the second lamp heater 256b and the quartz tube 252 in the second region, three cylindrical lenses 260a to 260c for heating the heat treatment surface 12a from the horizontal direction in the moving direction of the substrate 12 are provided. Is placed. The cylindrical lenses 260a to 260c extend in the vertical direction and are mounted on the outer wall surface 252a of the quartz tube 252. The cylindrical lenses 260a to 260c have condensing characteristics only in the direction orthogonal to the extending direction, and irradiate the heating light R to the heat treatment surface 12a in a direction orthogonal to the moving direction of the substrate 12.

In the board | substrate heat treatment apparatus 250 comprised as mentioned above, the board | substrate 12 is carried in the quartz tube 252 in a perpendicular state, and is heated by the heating light R emitted from the 1st lamp heaters 254a and 254b. It is heated to a preheating temperature which is the first temperature. Subsequently, the substrate 12 moves between the second lamp heaters 256a and 256b and is heated from the horizontal direction by the heating light R emitted from the second lamp heaters 256a and 256b. The heating light R emitted from the second lamp heater 256b is collected by the cylindrical lenses 260a to 260c to anneal the heat treatment surface 12a of the substrate 12 to a second temperature higher than the preheating temperature. Heat to temperature The substrate 12 in which the heat treatment surface 12a is heated to the annealing temperature is moved between the third lamp heaters 258a and 258b, and is heated by the heating light R emitted from the third lamp heaters 258a and 258b. After heating to the auxiliary heating temperature which is a temperature, it is carried out from the quartz tube 252.

The substrate heat treatment apparatus 250 supports the substrate 12 in an upright state, moves the inside of the quartz tube 252 in the horizontal direction, and heats the heat treatment surface 12a from the horizontal direction, thereby efficiently heating the heat treatment surface 12a. It can be heat treated. That is, since the atmosphere heated by the heating light R rises along the heat treatment surface 12a, the heated atmosphere does not diffuse from the heat treatment surface 12a, so that the heat treatment surface 12a is efficiently skin-heated. . Moreover, since the board | substrate heat treatment apparatus 250 conveys the board | substrate 12 in an upright state, the board | substrate 12 can heat the heat processing surface 12a uniformly, without bending under the own weight, There is no fear that the occupied floor area may increase depending on the dimensions of the substrate 12. Moreover, it is preferable to set the moving speed of the board | substrate 12 in the range of 3-30 cm / sec with respect to each board | substrate 12 of a semiconductor wafer, a liquid crystal substrate, and a solar cell substrate.

[Fifth Embodiment]

14B is a longitudinal section of the horizontal substrate heat treatment apparatus 270 of the fifth embodiment. In the substrate heat treatment apparatus 270, heat treatment may be performed on the substrate 12, which is a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate.

The board | substrate heat treatment apparatus 270 is the apparatus which comprised the board | substrate heat treatment apparatus 250 of 4th Embodiment inclining by the angle (theta) toward the heat treatment surface 12a side of the board | substrate 12 with respect to a perpendicular direction (arrow Z direction). Accordingly, the cylindrical lenses 260a to 260c are disposed obliquely below the substrate 12 to heat the heat treatment surface 12a from the inclined lower direction. In addition, the same code | symbol is attached | subjected to the structural component same as the board | substrate heat treatment apparatus 250, and the description is abbreviate | omitted.

In the substrate heat treatment apparatus 270, the substrate 12 moves in the horizontal direction in a state inclined by the angle θ toward the heat treatment surface 12a, and in the inclined state, the first lamp heaters 254a and 254b and the second lamp heater. The heat treatment is performed by the 256a and 256b and the third lamp heaters 258a and 258b. In this case, the atmosphere heated by the heating light R rises along the heat treatment surface 12a of the substrate 12 inclined downward with respect to the vertical direction. Moreover, since the board | substrate 12 is arrange | positioned inclined by the angle (theta) to the heat processing surface 12a side, the atmosphere which rises along the heat processing surface 12a is the board | substrate 12 arrange | positioned in the upright state in 4th Embodiment. In this case, the residence time on the heat treatment surface 12a is longer, and the diffusion is also suppressed. Therefore, the heat treatment surface 12a is skin-heated more effectively by the heating light R. FIG. Moreover, it is preferable to set the moving speed of the board | substrate 12 in the range of 3-30 cm / sec with respect to each board | substrate 12 of a semiconductor wafer, a liquid crystal substrate, and a solar cell substrate.

[Sixth Embodiment]

FIG. 15: is a longitudinal cross-sectional view parallel to the surface of the semiconductor wafer of the vertical substrate heat processing apparatus 100 of 6th Embodiment. 16A is a longitudinal cross-sectional view orthogonal to the surface of the semiconductor wafer 105 of the vertical substrate heat treatment apparatus 100 of the sixth embodiment, and FIG. 16B is a cross sectional view of the vertical substrate heat treatment apparatus 100 of the sixth embodiment. It is explanatory drawing of the furnace temperature in 1 area | region 120, the 2nd area | region 130, and the 3rd area | region 140. FIG.

15 and 16A and 16B, reference numeral 101 denotes a flat path of a sixth embodiment, reference numeral 102 denotes a furnace made of a refractory / insulating material, reference numeral 103 denotes an electric resistance heater or a lamp heater connected to a power source; Reference numeral 104 denotes a quartz tube, reference numerals 113 and 115 denote lamp heaters connected to a power source, reference numeral 120 denotes a first region, reference numeral 130 a second region, and reference numeral 140 a third region. Although the dimension of the semiconductor wafer 105 is not specifically limited, 12 to 18 inches are currently used a lot. FIG. 15 is a cross-sectional view of the flat path cut along the surface of the semiconductor wafer 105 (main surface forming the device), FIG. 16A is a cross-sectional view perpendicular to this, and the latter is smaller than the former with respect to the width of the furnace. The heater is brought close to the surface of the semiconductor wafer 105 as much as possible to uniformly heat the semiconductor wafer 105.

Since the semiconductor wafer 105 passes through the second region 130 without stopping, it is not necessary to heat the circumferential end edge of the semiconductor wafer 105. In FIG. 15, the lamp heater is not arrange | positioned at the narrow side of the flat path. On the other hand, since the semiconductor wafer 105 stops in the first region 120 and the third region 140, the heaters 103 and 115 are disposed on the entire surface of the furnace to ensure a uniform heating state.

Atmospheric gas or purge gas is supplied from the gas ejector 123 into the furnace, and gas generated from the surface of the semiconductor wafer 105 by annealing is discharged from the bottom to the outside of the furnace. The flow rate of this gas is small enough to not affect the temperature distribution.

16B shows the temperature distribution formed in the furnace immediately after the preheating is completed. The temperature distribution of the first region 120 is indicated by 20T and corresponds to the first temperature. In addition, since the annealed semiconductor wafer 105 does not need to be preheated, when the lamp heater 115 is cut off, the temperature distribution of the first region 120 is lowered toward the insertion side of the furnace such as 20T 'and the semiconductor wafer 105 can be cooled rapidly.

The most characteristic point of 6th Embodiment is the temperature distribution 30T formed in the 2nd area | region 130 in which the semiconductor wafer 105 is moving, The peak temperature 30P of this temperature distribution 30T is 850-1100 degreeC which is a crystal defect improvement temperature. Or within the range of 500 to 750 ° C., which is the insulating film modification temperature, and is continuously connected to the temperature distributions 20T and 40T. In order to form the temperature distribution 30T having such a profile, a method such as increasing the batch density of the lamp heater 113 near the peak temperature 30P and / or increasing the power is possible.

In the semiconductor wafer 105, an edge of an edge is held by a jig consisting of a plurality of hooks 107 protruding inward from the U-shaped strut 106 and the upper fixing plate 108. The inside of the furnace is moved by the lifter 117 penetrating so as to slide. The supporting jig of the semiconductor wafer 105 composed of these members 106, 107, 108, and 117 is made of a material that is thin and has good thermal conductivity so that the heat capacity is as small as possible. In addition, since the semiconductor wafer 105 is preferably uniformly heated in the first region 120, heat transfer in the contact portion between the semiconductor wafer 105 and the jig during annealing in the second region 130 is achieved. Is almost none.

By the way, assuming that the semiconductor wafer 105 moving the second region 130 is temporarily stopped, the temperature distribution of one semiconductor wafer 105 is less than the temperature distribution 30T in the same profile as the temperature distribution 30T. It seems to be slightly low temperature. Therefore, the semiconductor wafer 105 passing through the second region 130 is annealed at a temperature slightly lower than the sequential peak temperature 30P. That is, the annealing time is a time passing the peak temperature 30P. The above-mentioned moving speed of the semiconductor wafer 105 determines the annealing time and is considered to be about 0.1 second or more.

The temperature distribution 30T 'is a temperature distribution in the case where a current from a power source is not input to the lamp heater 113 in the second region 30.

17 is an enlarged cross-sectional view of the lamp heaters 113 and 115 used in the vertical substrate heat treatment apparatus 100 of the sixth embodiment. Reference numeral 131 denotes a halogen gas encapsulation, reference numeral 132 denotes a tungsten heater, reference numeral 133 denotes a quartz plate, reference numeral 134 denotes a gold reflective film, and reference numeral 135 denotes a socket.

18A and 18B are explanatory diagrams of the operation of the heater at the time of advancing and retreating the semiconductor wafer 105 in the vertical substrate heat treatment apparatus 100 according to the sixth embodiment.

18A and 18B show a semiconductor wafer 105 located anywhere in the first region 120, the second region 130, or the third region 140 in the substrate heat treatment apparatus 100 of the sixth embodiment. It shows whether the heater of each area | region turns into a heating state or a non-heating state depending on whether there exists.

15 and 16A, when the semiconductor wafer 105 is configured to advance and retract the inside of the furnace, in the retreat step, the connection to all power sources of the heaters is cut off, and the semiconductor wafer 105 is simply opened. It can also be taken out. If there is excess in the thermal budget, additional high temperature heating may be performed in the retraction step.

In Fig. 18B, the processing different from that of the advance is as follows. First, by heating in the first region 120, the semiconductor wafer 105 can be maintained at an intermediate temperature between the high temperature heat treatment temperature and the outside furnace temperature. In addition, the semiconductor wafer 105 can be taken out as it is without maintaining temperature. If the first region 120 is heated to 700 to 850 ° C. when the semiconductor wafer 105 is disposed in the third region 140, the semiconductor wafer 105 has the same crystal defect improvement process as the advance step twice. Is done in. Subsequently, the semiconductor wafer 105 does not need to be heated in the third region 140 in which the semiconductor wafer 105 is not disposed. However, when the semiconductor wafer 105 is to be processed, the semiconductor wafer 105 is heated to increase productivity. It is preferable to carry out.

As mentioned above, although 6th Embodiment which heats one semiconductor wafer 105 on both sides in the vertical furnace was demonstrated, it is clear that it can change as follows.

(A) The vertical type | mold is set as the structure which removes one lamp heater 113 of FIG. 16A, and heats only one side in which a semiconductor device is formed.

(B) In the vertical mold, two semiconductor wafers 105 are arranged such that the rear surfaces thereof face each other.

(C) The vertical furnace is replaced by a horizontal furnace.

(D) In the horizontal furnace, the first region 120 is the inlet side, and the third region 140 is the outlet side.

The present invention can be used in place of a FLA using a hot plate currently employed to contribute to heat treatment of a semiconductor wafer.

In addition, this invention is not limited to embodiment mentioned above, It is possible to change in the range which does not deviate from the main point of this invention.

10, 60, 100, 200, 250, 270... Substrate Heat Treatment Equipment
12... Board
12a ... Heat treatment surface
14, 62, 104, 214, 252... Quartz tube
15, 63a, 63b... Outer wall face
16a, 16b, 216a, 216b... gate
18, 218... road
20, 64... Substrate holder
22, 72, 120, 222... The first region
24, 76, 130, 224... The second region
26, 140, 226... Third area
28, 30, 32, 228, 230, 232... Temperature detector
34, 70, 123, 234, 253... Gas blower
36a to 36d, 74a, 74b, 236a, 236b, 254a, 254b... First lamp heater
38a, 38b, 78a, 78b, 238a, 238b, 256a, 256b. Second lamp heater
40a to 40d, 240a, 240b, 258a, 258b... Third lamp heater
42 ... Halogen lamp
44, 44a to 44c, 54a to 54c, 84a to 84c and 86a to 86c, 244a to 244c, 260a to 260c. Cylindrical lens
46 ... The control unit
48 ... Board moving part
50 ... Position detector
52 ... Heat Treatment Profile Memory
66 ... Bottom plate
68, 117... Lifter
80 ... Secondary area
82a, 82b... Auxiliary lamp heater
101 ... Flat road
102... Lhotse
103 ... Electric resistance heater or lamp heater
105 ... Semiconductor wafer
106 ... U shaped strut
107 ... hook
108 ... Upper fixing plate
113, 115... Lamp heater
119... Bottom plate
131 ... Halogen gas enclosure
132 ... Tungsten heater
133 ... Quartz plate
134 ... Gold reflector
135 ... socket
R ... Heating light
r… Emission

Claims (23)

A first region for heating a substrate, which is a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate, to a first temperature;
A second region for heating the substrate heated to the first temperature to a second temperature;
A third region for heating the substrate heated to the second temperature to a third temperature;
First heating means for heating the substrate in the first region;
Second heating means which is a lamp heater which emits heating light for heating the substrate of the second region;
Third heating means for heating the substrate in the third region,
A moving part for moving the substrate from the first area to the third area through the second area;
Disposed between the second heating means and the substrate in the second region, extending in a direction parallel to the plane of the substrate and orthogonal to the movement direction of the substrate, wherein the heating light is directed to the substrate in the movement direction; A condensing lens for irradiating the substrate in an orthogonal direction to epidermal heating the substrate;
A heat treatment profile storage unit which stores a heat treatment profile including a current supplied to the first heating means, the second heating means and the third heating means, and a moving speed of the substrate by the moving unit;
A control unit which controls the first heating means, the second heating means, and the third heating means and moves the substrate in accordance with the heat treatment profile.
Substrate heat treatment apparatus comprising a. The method of claim 1,
When the substrate is the semiconductor wafer, the first temperature is set in the range of 300 to 450 ° C., and the second temperature is in the range of 800 to 1100 ° C. in order to improve crystal defects of the semiconductor wafer subjected to ion implantation. And the third temperature is set in a range of 200 to 400 ° C. The method of claim 1,
When the substrate is the semiconductor wafer, the first temperature is set in a range of 200 to 450 ° C. to improve film quality defects of a film formed on the semiconductor wafer by any one of a CVD process, a sputtering process, or a deposition process. And the second temperature is set in a range of 300 to 900 ° C, and the third temperature is set in a range of 200 to 400 ° C. The method of claim 1,
When the substrate is the liquid crystal substrate, in order to convert the amorphous silicon layer into the polysilicon layer, the first temperature is set in the range of 300 to 450 ° C., and the second temperature is set in the range of 550 to 1100 ° C. And the third temperature is set in a range of 200 to 400 ° C. 5. The method according to any one of claims 1 to 4,
A substrate heat treatment apparatus comprising a horizontal heating furnace carrying the substrate into the first region on one end side and carrying the substrate out in the horizontal direction from the third region on the other end side through the second region. . The method of claim 5,
The condenser lens is disposed under the substrate, and the substrate, which moves the second region with the heat treatment surface downward, is subjected to epidermal heating from the vertically downward direction by the heating light collected by the condenser lens. Substrate heat treatment apparatus. The method of claim 5,
And said condensing lens is disposed in a vertical state, and the heat treatment surface of said substrate is subjected to skin heating from the horizontal direction by said heating light condensed by said condensing lens. The method of claim 5,
The condensing lens is disposed obliquely below the substrate, and the substrate, which moves the second region with the heat treatment surface inclined downward, is subjected to epidermal heating from the inclined downward direction by the heating light collected by the condensing lens. Substrate heat treatment apparatus. 5. The method according to any one of claims 1 to 4,
The vertical type | mold which carries in the said board | substrate to the said 1st area | region by the vertical direction lower end side, and carries out the said board | substrate from the said 3rd area | region of the vertical direction lower end side common to the said 1st area | region through the said 2nd area | region of the vertical direction upper end side. The substrate heat treatment apparatus which consists of a heating furnace of the. Carrying out a substrate, which is a semiconductor wafer, a liquid crystal substrate or a solar cell substrate, to a first region, supplying a current based on a heat treatment profile to the first heating means, and heating the substrate to a first temperature;
Bringing the substrate from the first region into the second region, moving the substrate at a moving speed based on a heat treatment profile, and supplying a current based on the heat treatment profile to second heating means, which is a lamp heater, The heating light emitted from the second heating means is irradiated in a direction orthogonal to the moving direction of the substrate with respect to the substrate through a condensing lens parallel to the surface of the substrate and extending in a direction orthogonal to the moving direction of the substrate. And epitaxially heating the substrate to the second temperature;
Bringing the substrate into the third region from the second region, supplying a current based on a heat treatment profile to a third heating means, and heating the substrate to a third temperature
And the heat treatment profile includes a current supplied to the first heating means, the second heating means, and the third heating means, and a moving speed of the substrate. The method of claim 10,
When the substrate is the semiconductor wafer, the first temperature is set in the range of 300 to 450 ° C., and the second temperature is in the range of 800 to 1100 ° C. in order to improve crystal defects of the semiconductor wafer subjected to ion implantation. And the third temperature is set in a range of 200 to 400 ° C. The method of claim 10,
When the substrate is the semiconductor wafer, the first temperature is set in a range of 200 to 450 ° C. to improve film quality defects of a film formed on the semiconductor wafer by any one of a CVD process, a sputtering process, or a deposition process. And the second temperature is set in a range of 300 to 900 ° C, and the third temperature is set in a range of 200 to 400 ° C. The method of claim 10,
When the substrate is the liquid crystal substrate, in order to convert the amorphous silicon layer into the polysilicon layer, the first temperature is set in the range of 300 to 450 ° C., and the second temperature is set in the range of 550 to 1100 ° C. And the third temperature is set in a range of 200 to 400 ° C. 14. The method according to any one of claims 10 to 13,
And the substrate is carried in the first region on one end side and carried out in the horizontal direction from the third region on the other end side through the second region. 15. The method of claim 14,
The substrate is moved to the second region with the heat treated surface down, and the heat treated surface is subjected to epidermal heating from the vertically downward direction by the heating light collected by the condensing lens disposed below the substrate. Substrate heat treatment method. 15. The method of claim 14,
The substrate is heat-treated to the second region with the heat treatment surface in a vertical state, and the heat treatment surface is subjected to skin heating from the horizontal direction by the heating light collected by the condensing lens arranged in the vertical state. Way. 15. The method of claim 14,
The substrate is moved to the second region with the heat treatment surface inclined downward, and the heat treatment surface is epidermal heated from the inclined lower direction by the heating light collected by the condensing lens disposed obliquely below the substrate. Substrate heat treatment method. 14. The method according to any one of claims 10 to 13,
The substrate is carried in the first region on the lower side in the vertical direction, and is carried out from the third region on the lower side in the vertical direction common to the first region through the second region on the upper side in the vertical direction. Substrate heat treatment method. A substrate heat treatment method in which a heat treatment for improving crystal defects of ion-implanted semiconductor wafers is performed by moving the upright semiconductor wafer in a heating furnace in a direction along the semiconductor wafer surface, and (A) a temperature lower than a temperature for crystal defect improvement. A first region in which a first lamp heater is arranged to heat the inside of the heating furnace to preheat the semiconductor wafer (hereinafter referred to as "first temperature"), (B) the first region (A) and the third below A second region in which a second lamp heater is disposed in the middle of the region (C) to generate a temperature (hereinafter referred to as a "second temperature") within the heating furnace in order to improve crystal defects, and ( C) The 3rd area | region which arrange | positioned the 3rd area | region which arrange | positions the heater which heats the inside of the said heating furnace in the temperature (hereinafter called "third temperature") within the range of 650-800 degreeC, and moves the said 2nd area | region Movement of the semiconductor wafer The temperature profile of the fragrance is set such that the temperature gradually decreases from the peak temperature within the range of the second temperature so as to be continuous with the first temperature and the third temperature, and the semiconductor wafer preheated in the first region (A) And the temperature profile is generated by flowing a current through the second lamp heater only during a period passing through the second region (C) immediately before moving to the second region (C). 20. The method of claim 19,
A method of modifying an oxide film, a nitride film, or a W film formed by CVD, sputtering, or vapor deposition in a temperature range of 200 to 400 ° C., instead of the heat treatment for crystal defect improvement, wherein the second temperature is 500 to 750 ° C., The 3rd temperature is 200-450 degreeC, The substrate heat processing method characterized by the above-mentioned. 21. The method according to claim 19 or 20,
And a furnace wall width in a direction parallel to the plane of the semiconductor wafer as viewed in a cross section in the long axis direction of the heating furnace, wherein the furnace wall width in a direction orthogonal to the parallel direction is larger. 22. The method according to any one of claims 19 to 21,
The semiconductor wafer is held in the first region and the third region and cracked at the first temperature and the third temperature, respectively. 23. The method according to any one of claims 19 to 22,
Holding the semiconductor wafer in the third region to crack at the third temperature, and subsequently interrupting current to the first lamp heater immediately before moving from the second region to the first region. Heat treatment method.

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