KR20130031525A - Light emitting device, light emitting device package, and light unit - Google Patents

Abstract

The light emitting device according to the embodiment includes a first semiconductor layer of a first conductivity type, a first active layer under the first semiconductor layer of the first conductivity type, and a second semiconductor layer of a second conductivity type under the first active layer. A first light emitting structure comprising; A first reflective electrode under the first light emitting structure; A second light emitting structure comprising a third semiconductor layer of a first conductivity type, a second active layer under the third conductive layer of the first conductivity type, and a fourth semiconductor layer of a second conductivity type under the second active layer; A second reflecting electrode under the second light emitting structure; A contact portion electrically connected to the first semiconductor layer of the first conductivity type; A current or voltage control element electrically connected to the contact portion and the second reflection electrode to control a current or voltage applied to the contact portion or the second reflection electrode; It includes.

Description

Light Emitting Devices, Light Packages, Light Units {LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHT UNIT}

Embodiments relate to a light emitting device, a light emitting device package, and a light unit.

Light emitting diodes (LEDs) are widely used as light emitting devices. Light-emitting diodes use the properties of compound semiconductors to convert electrical signals into light, such as infrared, visible and ultraviolet light.

As the light efficiency of light emitting devices increases, light emitting devices have been applied to various fields including display devices and lighting devices.

The embodiment provides a light emitting device, a light emitting device package, and a light unit including a plurality of light emitting cells electrically connected in series with reliability.

The light emitting device according to the embodiment includes a first semiconductor layer of a first conductivity type, a first active layer under the first semiconductor layer of the first conductivity type, and a second semiconductor layer of a second conductivity type under the first active layer. A first light emitting structure comprising; A first reflective electrode under the first light emitting structure; A second light emitting structure comprising a third semiconductor layer of a first conductivity type, a second active layer under the third conductive layer of the first conductivity type, and a fourth semiconductor layer of a second conductivity type under the second active layer; A second reflecting electrode under the second light emitting structure; A contact portion electrically connected to the first semiconductor layer of the first conductivity type; A current or voltage control element electrically connected to the contact portion and the second reflection electrode to control a current or voltage applied to the contact portion or the second reflection electrode; It includes.

The light emitting device according to the embodiment may include a plurality of light emitting cells each including a second conductive semiconductor layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer; A contact unit electrically connected to a first conductive semiconductor layer of a first light emitting cell among the plurality of light emitting cells; A current or voltage control element electrically connected to the second conductive semiconductor layer of the second light emitting cell adjacent to the contact portion and the first light emitting cell to control a current or voltage; It includes.

The light emitting device package according to the embodiment includes a body; A light emitting element disposed on the body; A first lead electrode and a second lead electrode electrically connected to the light emitting device; The light emitting device includes a first semiconductor layer of a first conductivity type, a first active layer under the first conductive layer of the first conductivity type, and a second semiconductor layer of a second conductivity type under the first active layer. A first light emitting structure comprising a; A first reflective electrode under the first light emitting structure; A second light emitting structure comprising a third semiconductor layer of a first conductivity type, a second active layer under the third conductive layer of the first conductivity type, and a fourth semiconductor layer of a second conductivity type under the second active layer; A second reflecting electrode under the second light emitting structure; A contact portion electrically connected to the first semiconductor layer of the first conductivity type; A current or voltage control element electrically connected to the contact portion and the second reflection electrode to control a current or voltage applied to the contact portion or the second reflection electrode; It includes.

The light emitting device package according to the embodiment includes a body; A light emitting element disposed on the body; A first lead electrode and a second lead electrode electrically connected to the light emitting device; The light emitting device includes: a plurality of light emitting cells each including a second conductive semiconductor layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer; A contact unit electrically connected to a first conductive semiconductor layer of a first light emitting cell among the plurality of light emitting cells; A current or voltage control element electrically connected to the second conductive semiconductor layer of the second light emitting cell adjacent to the contact portion and the first light emitting cell to control a current or voltage; It includes.

According to an embodiment, a light unit includes a substrate; A light emitting device disposed on the substrate; An optical member through which light provided from the light emitting device passes; The light emitting device includes a first semiconductor layer of a first conductivity type, a first active layer under the first semiconductor layer of the first conductivity type, and a second semiconductor layer of a second conductivity type under the first active layer. A first light emitting structure comprising a; A first reflective electrode under the first light emitting structure; A second light emitting structure comprising a third semiconductor layer of a first conductivity type, a second active layer under the third conductive layer of the first conductivity type, and a fourth semiconductor layer of a second conductivity type under the second active layer; A second reflecting electrode under the second light emitting structure; A contact portion electrically connected to the first semiconductor layer of the first conductivity type; A current or voltage control element electrically connected to the contact portion and the second reflection electrode to control a current or voltage applied to the contact portion or the second reflection electrode; It includes.

According to an embodiment, a light unit includes a substrate; A light emitting device disposed on the substrate; An optical member through which light provided from the light emitting device passes; The light emitting device includes: a plurality of light emitting cells each including a second conductive semiconductor layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer; A contact unit electrically connected to a first conductive semiconductor layer of a first light emitting cell among the plurality of light emitting cells; A current or voltage control element electrically connected to the second conductive semiconductor layer of the second light emitting cell adjacent to the contact portion and the first light emitting cell to control a current or voltage; It includes.

The light emitting device, the light emitting device package, and the light unit according to the embodiment may provide a plurality of light emitting cells with reliability and electrically connected in series.

1 is a view conceptually showing a light emitting device according to an embodiment.
2 is a view showing a light emitting device according to an embodiment.
3 to 7 illustrate a method of manufacturing a light emitting device according to the embodiment.
8 to 10 are views showing a modified example of the light emitting device according to the embodiment.
11 is a view showing a light emitting device package according to the embodiment.
12 is a diagram illustrating a display device according to an exemplary embodiment.
13 is a diagram illustrating another example of a display device according to an exemplary embodiment.
14 is a view showing a lighting apparatus according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device, a light emitting device package, a light unit, and a light emitting device manufacturing method according to embodiments will be described in detail with reference to the accompanying drawings.

1 is a view conceptually showing a light emitting device according to an embodiment.

The light emitting device according to the embodiment may include a plurality of light emitting cells, as shown in FIG. 1. Although three light emitting cells are illustrated in FIG. 1, two light emitting cells may be implemented or four or more light emitting cells may be implemented.

The first light emitting cell may include a first semiconductor layer a1 of a first conductivity type, a first active layer a2, and a second semiconductor layer a3 of a second conductivity type. The second light emitting cell may include a third semiconductor layer b1 of the first conductivity type, a second active layer b2, and a fourth semiconductor layer b3 of the second conductivity type. The third light emitting cell may include a fifth semiconductor layer c1 of the first conductivity type, a third active layer c2, and a sixth semiconductor layer c3 of the second conductivity type.

The light emitting device according to the embodiment may include a first current or voltage control device and a second current or voltage control device. The first current or voltage control element may be disposed between the first light emitting cell and the second light emitting cell. The second current or voltage control element may be disposed between the second light emitting cell and the third light emitting cell.

The first current or voltage control element may include a first electrode E11, a second electrode E12, a third electrode E13, and a first semiconductor element S1. A first oxide / dielectric layer E14 may be further included between the second electrode E12 and the first semiconductor element S1.

The second current or voltage control element may include a fourth electrode E21, a fifth electrode E22, a sixth electrode E23, and a second semiconductor element S2. An oxide / dielectric layer E24 may be further included between the fifth electrode E22 and the second semiconductor element S2.

The first current or voltage control element may be electrically connected between the first semiconductor layer a1 of the first light emitting cell and the fourth semiconductor layer b3 of the second light emitting cell. A first contact portion T11 may be disposed between the first semiconductor layer a1 and the first electrode E11 of the first current or voltage control element, and the third contact of the first current or voltage control element. The second contact portion T12 may be disposed between the electrode E13 and the fourth semiconductor layer b3. The first current or voltage control element may control a current or voltage between the first semiconductor layer a1 and the fourth semiconductor layer b3 by adjusting a voltage applied to the second electrode E12. have.

The second current or voltage control element may be electrically connected between the third semiconductor layer b1 of the second light emitting cell and the sixth semiconductor layer c3 of the third light emitting cell. A third contact portion T21 may be disposed between the third semiconductor layer b1 and the fourth electrode E21 of the second current or voltage control element, and the sixth of the second current or voltage control element. The fourth contact portion T22 may be disposed between the electrode E23 and the sixth semiconductor layer c3. The second current or voltage control element may control the current or voltage between the third semiconductor layer b1 and the sixth semiconductor layer c3 by adjusting the voltage applied to the fifth electrode E22. have.

The first current or voltage control element and the second current or voltage control element may include, for example, bipolar transistors or FET transistors. The first current or voltage control element and the second current or voltage control element may include an npn type transistor or a pnp type transistor.

The light emitting device according to the embodiment is applied to the second electrode E12 and the fifth electrode E22 even when a voltage / current higher than the designed voltage / current is applied by disposing a current or voltage control element between each light emitting cell. It is possible to control the current and voltage flowing between each light emitting cell by adjusting the voltage.

Hereinafter, specific implementation examples of the light emitting device will be described. 2 is a view showing a light emitting device according to an embodiment.

As shown in FIG. 2, the light emitting device according to the embodiment includes a first light emitting structure 10, a second light emitting structure 20, a first reflecting electrode 17, a second reflecting electrode 27, and an electrode ( 80). 2 illustrates a case where two light emitting structures are disposed, the light emitting device according to the embodiment may include three light emitting structures and may also include four or more light emitting structures. The plurality of light emitting structures may be electrically connected in series. The plurality of light emitting structures may be disposed on the support substrate 70.

The first light emitting structure 10 may include a first semiconductor layer 11 of a first conductivity type, a first active layer 12, and a second semiconductor layer 13 of a second conductivity type. The first active layer 12 may be disposed between the first semiconductor layer 11 of the first conductivity type and the second semiconductor layer 13 of the second conductivity type. The first active layer 12 may be disposed under the first semiconductor layer 11 of the first conductivity type, and the second semiconductor layer 13 of the second conductivity type may be below the first active layer 12. Can be placed in.

For example, the first semiconductor layer 11 of the first conductivity type is formed of an n-type semiconductor layer to which an n-type dopant is added as the first conductivity type dopant, and the second semiconductor layer 13 of the second conductivity type. The second conductive dopant may be formed of a p-type semiconductor layer to which a p-type dopant is added. Further, the first semiconductor layer 11 of the first conductivity type may be formed of a p-type semiconductor layer, and the second semiconductor layer 13 of the second conductivity type may be formed of an n-type semiconductor layer.

The first semiconductor layer 11 of the first conductivity type may include, for example, an n-type semiconductor layer. A first semiconductor layer (11) of the first conductivity type having the compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be implemented with a semiconductor material. The first semiconductor layer 11 of the first conductivity type may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. N-type dopants such as Sn, Se, Te, and the like may be doped.

The first active layer 12 is electrons (or holes) injected through the first semiconductor layer 11 of the first conductivity type and holes injected through the second semiconductor layer 13 of the second conductivity type ( Or electrons) meet each other and emit light due to a band gap difference of an energy band according to a material of forming the first active layer 12. The first active layer 12 may be formed of any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure, but is not limited thereto.

The first active layer 12 is implemented as an example of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be. When the first active layer 12 is implemented as the multi quantum well structure, the first active layer 12 may be implemented by stacking a plurality of well layers and a plurality of barrier layers, for example, an InGaN well layer. It can be implemented in the cycle of the / GaN barrier layer.

The second semiconductor layer 13 of the second conductivity type may be implemented with, for example, a p-type semiconductor layer. A second semiconductor layer (13) of the second conductivity type having the compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be implemented with a semiconductor material. The second conductive second semiconductor layer 13 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. P-type dopants such as, Ca, Sr, and Ba may be doped.

The first semiconductor layer 11 of the first conductivity type may include a p-type semiconductor layer, and the second semiconductor layer 13 of the second conductivity type may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed under the second conductive layer 13 of the second conductivity type. Accordingly, the first light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures. In addition, the doping concentrations of the impurities in the first semiconductor layer 11 of the first conductivity type and the second semiconductor layer 13 of the second conductivity type may be uniformly or nonuniformly formed. That is, the structure of the first light emitting structure 10 may be variously formed, but is not limited thereto.

In addition, a first conductive InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first semiconductor layer 11 of the first conductivity type and the first active layer 12. In addition, a second conductive AlGaN layer may be formed between the second semiconductor layer 13 of the second conductivity type and the first active layer 12.

The second light emitting structure 20 may include a third semiconductor layer 21 of a first conductivity type, a second active layer 22, and a fourth semiconductor layer 23 of a second conductivity type. The second active layer 22 may be disposed between the third semiconductor layer 21 of the first conductivity type and the fourth semiconductor layer 23 of the second conductivity type. The second active layer 22 may be disposed below the third semiconductor layer 21 of the first conductivity type, and the fourth semiconductor layer 23 of the second conductivity type may be below the second active layer 22. Can be placed in. The second light emitting structure 20 may be similarly formed in accordance with the first light emitting structure 10 described above.

The first ohmic contact layer 15 and the first reflective electrode 17 may be disposed under the first light emitting structure 10. The first channel layer 16 may be disposed under the first light emitting structure 10 and around the first ohmic contact layer 15.

The first channel layer 16 may be formed of, for example, a material having electrical insulation. The first channel layer 16 may be formed of, for example, oxide or nitride. For example, the first channel layer 16 may include at least one of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , and the like. Can be selected and formed. The first channel layer 16 may also be referred to as an isolation layer.

A first current blocking layer (CBL) 18 may be disposed between the first light emitting structure 10 and the first ohmic contact layer 15. The first current blocking layer 18 may improve the luminous efficiency of the light emitting device according to the embodiment by alleviating the phenomenon that the current is concentrated in a portion of the first active layer 12.

The first current blocking layer 18 may be electrically insulating, or may be formed using a material that forms a Schottky contact with the first light emitting structure 10. The first current blocking layer 18 may be formed of an oxide, nitride, or metal. The first current blocking layer 18 may include, for example, at least one of SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O _{3 ,} TiO _x , Ti, Al, Cr. Can be.

The first channel layer 16 and the first current blocking layer 18 may be formed of the same material or different materials.

The first ohmic contact layer 15 may be formed of, for example, a transparent conductive oxide layer. The first ohmic contact layer 15 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO) or IAZO. (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO It may be formed of at least one material selected from Pt, Ag.

The first reflective electrode 17 may be formed of a metal material having a high reflectance. For example, the first reflective electrode 17 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the first reflecting electrode 17 may be formed of the metal or the alloy, Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (IZO), Indium-Zinc-Tin-Oxide (IZTO), and Indium-Aluminum (AZO). Transmissive conductive materials such as -Zinc-Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO) It can be formed in a multi-layer using. For example, in an embodiment, the first reflective electrode 17 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.

The first ohmic contact layer 15 may be formed to be in ohmic contact with the first light emitting structure 10. In addition, the first reflective electrode 17 may function to increase the amount of light extracted to the outside by reflecting light incident from the first light emitting structure 10.

In addition, a second ohmic contact layer 25 and the second reflective electrode 27 may be disposed under the second light emitting structure 20. The second channel layer 26 may be disposed under the second light emitting structure 20 and around the second ohmic contact layer 25.

The second channel layer 26 may be formed of, for example, a material having electrical insulation. The second channel layer 26 may be formed of, for example, oxide or nitride. For example, the second channel layer 26 may include at least one of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , and the like. Can be selected and formed. The second channel layer 26 may be referred to as an isolation layer.

A second current blocking layer 28 may be disposed between the second light emitting structure 20 and the second ohmic contact layer 25. The second current blocking layer 28 may improve the luminous efficiency of the light emitting device according to the embodiment by alleviating a phenomenon in which current is concentrated in a portion of the second active layer 22.

The second current blocking layer 28 may have electrical insulation or may be formed using a material for forming a schottky contact with the second light emitting structure 20. The second current blocking layer 28 may be formed of an oxide, nitride, or metal. The second current blocking layer 28 may include, for example, at least one of SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O _{3 ,} TiO _x , Ti, Al, Cr. Can be.

The second channel layer 26 and the second current blocking layer 18 may be formed of the same material or different materials.

The second ohmic contact layer 25 may be formed of, for example, a transparent conductive oxide layer. The second ohmic contact layer 25 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), or IAZO. (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO It may be formed of at least one material selected from Pt, Ag.

The second reflecting electrode 27 may be formed of a metal material having a high reflectance. For example, the second reflective electrode 27 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the third reflecting electrode 37 may be formed of the metal or the alloy, Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (IZO), Indium-Zinc-Tin-Oxide (IZTO), and Indium-Aluminum (AZO). Transmissive conductive materials such as -Zinc-Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO) It can be formed in a multi-layer using. For example, in the exemplary embodiment, the second reflective electrode 27 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.

The second ohmic contact layer 25 may be formed in ohmic contact with the second light emitting structure 20. In addition, the second reflective electrode 27 may perform a function of increasing the amount of light extracted to the outside by reflecting light incident from the second light emitting structure 20.

The first contact portion 43 may be disposed under the first light emitting structure 10. The first contact portion 43 may be electrically connected to the first semiconductor layer 11 of the first conductivity type. The first contact portion 43 may be in contact with the first semiconductor layer 11 of the first conductivity type. The contact portion 43 may be in contact with the first semiconductor layer 11 of the first conductivity type.

The first contact portion 43 may be formed of at least one material selected from, for example, Cr, Al, Ti, Ni, Pt, and V. In addition, the first contact portion 43 may be formed of, for example, a transparent conductive oxide layer. The first contact portion 43 may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), and IAZO ( Among Indium Aluminum Zinc Oxide (IGZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO It may be formed of at least one material selected.

A current or voltage control element may be disposed between the first light emitting structure 10 and the second light emitting structure 20. The current or voltage control element may be electrically connected to the first contact portion 43. The current or voltage control element may be electrically connected to the second reflective electrode 27. The current or voltage control element may be electrically connected to the second reflective electrode 27 through the second contact portion 45.

The current or voltage control element may include a first layer 31, a second layer 32, a third layer 33, and a fourth layer 34. The first layer 31, the second layer 32, the third layer 33, and the fourth layer 34 may be implemented as semiconductor layers. The first layer 31, the second layer 32, the third layer 33, and the fourth layer 34 may form the first light emitting structure 10 or the second light emitting structure 20. It may be implemented as a semiconductor material to be formed, or may also be implemented as a semiconductor material such as silicon.

For example, the first layer 31 and the fourth layer 34 may be formed of a material similar to that of the first semiconductor layer 11 of the first conductivity type. For example, the first layer 31 and the fourth layer 34 may be implemented as an n-GaN layer. The second layer 32 may be implemented as an AlGaN layer or a p-GaN layer. The third layer 33 may be implemented as an undoped n-GaN layer. The control electrode 35 may be disposed on the third layer 33. A third insulating layer 36 may be disposed between the third layer 33 and the control electrode 35. The control electrode 35 may be a kind of gate electrode. The third insulating layer 36 may be a kind of gate insulating layer, and for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , AlN, may be implemented with a material such as HfO.

The current or voltage control element may include an npn type transistor or a pnp type transistor. In addition, the current or voltage control element may include a bipolar transistor or a FET transistor.

According to an embodiment, the current or voltage control element controls the current or voltage between the first semiconductor layer 11 and the fourth semiconductor layer 23 by adjusting the voltage applied to the control electrode 35. can do.

In the light emitting device according to the embodiment, the current or voltage control device is disposed between the first light emitting structure 10 and the second light emitting structure 20, even when a voltage / current higher than the designed voltage / current is applied. By controlling the voltage applied to the control electrode 35, it is possible to control the current and voltage flowing between the first light emitting structure 10 and the second light emitting structure 20.

Meanwhile, the first contact portion 43 may be in contact with the inside of the first semiconductor layer 11 of the first conductivity type. For example, the first semiconductor layer 11 of the first conductivity type may be implemented including a GaN layer. In this case, considering the growth direction and the etching direction of the semiconductor layer, the first contact portion 43 may be in contact with a Ga face of the first semiconductor layer 11 of the first conductivity type. As described above, since the first contact portion 43 may be in contact with the Ga surface of the first semiconductor layer 11 of the first conductivity type, thermal stability may be secured as compared with the N surface. Will be. In addition, according to the embodiment, since the first contact portion 43 may be in contact with the Ga surface of the first semiconductor layer 11 of the first conductivity type, the characteristic curve may vary according to the operating voltage compared to the N surface. This makes it possible to secure reliability and to be useful for high current application.

Meanwhile, a first insulating layer 40 may be disposed around and below the first contact portion 43. The first insulating layer 40 may be disposed between the first contact portion 43 and the first reflective electrode 17. The first insulating layer 40 may be disposed around and below the second reflective electrode 27. The first insulating layer 40 may be disposed under the first layer 31. The first insulating layer 40 may be disposed between the second contact portion 45 and the first layer 31. The first insulating layer 40 may be disposed between the second contact portion 45 and the second layer 32. The first insulating layer 40 may be disposed between the second contact portion 45 and the third layer 33. The first insulating layer 40 may be formed of oxide or nitride. The first insulating layer 40 is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of a material having a light transmitting and insulating properties. The first insulating layer 40 may be made of an insulating material, such as TiO ₂ , AlN.

A second insulating layer 47 may be disposed between the first contact portion 43 and the second layer 32. A second insulating layer 47 may be disposed between the first contact portion 43 and the third layer 33. A second insulating layer 47 may be disposed between the first contact portion 43 and the fourth layer 32. The second insulating layer 47 may be formed of oxide or nitride. The second insulating layer 47 is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of a material having a light transmitting and insulating properties. The second insulating layer 47 may be made of an insulating material such as TiO ₂ , AlN, or the like.

A diffusion barrier layer 50 may be disposed under the first reflective electrode 17 and the first insulating layer 40. The bonding layer 60 and the support member 70 may be disposed below the diffusion barrier layer 50.

In the diffusion barrier layer 50, a material included in the bonding layer 60 diffuses toward the first reflection electrode 17 and the second reflection electrode 27 in a process in which the bonding layer 60 is provided. Can be prevented. The diffusion barrier layer 50 may prevent a material such as tin (Sn) included in the bonding layer 60 from affecting the first reflective electrode 17, the second reflective electrode 27, or the like. have. The diffusion barrier layer 50 may include at least one of Cu, Ni, Ti-W, W, Pt, V, Fe, and Mo materials.

The bonding layer 60 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, . The support member 70 supports the light emitting device according to the embodiment and may be electrically connected to an external electrode to provide power to the first light emitting structure 10. The bonding layer 60 may be implemented as a seed layer.

The supporting member 70 may be a semiconductor substrate (for example, Si, Ge, GaN, GaAs, or the like) into which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu- ZnO, SiC, SiGe, and the like). In addition, the support member 70 may be implemented with an insulating material. The support member 70 may be made of a material such as Al ₂ O ₃ , SiO ₂ .

Meanwhile, the electrode 80 may be disposed on the third semiconductor layer 21 of the first conductivity type. The electrode 80 may be electrically connected to the third semiconductor layer 21 of the first conductivity type. The electrode 80 may be in contact with an upper surface of the third semiconductor layer 21 of the first conductivity type.

Accordingly, the first light emitting structure 10 by the electrode 80 and the first reflective electrode 17. Power may be provided to the second light emitting structure 20. The first light emitting structure 10 and the second light emitting structure 20 are electrically connected in series. Accordingly, when power is applied through the electrode 80 and the first reflective electrode 17, light may be provided from the first light emitting structure 10 and the second light emitting structure 20. In addition, the amount of current and voltage flowing from the first light emitting structure 10 to the second light emitting structure 20 can be controlled by the current or voltage control device according to the embodiment.

According to an embodiment, the electrode 80 may be implemented in a multilayer structure. The electrode 80 may be implemented as an ohmic contact layer, an intermediate layer, and an upper layer. The ohmic contact layer may implement an ohmic contact by including a material selected from Cr, V, W, Ti, and Zn. The intermediate layer may be formed of a material selected from Ni, Cu, Al, and the like. The upper layer may comprise, for example, Au.

A light extraction pattern may be provided on upper surfaces of the first light emitting structure 10 and the second light emitting structure 20. Concave-convex patterns may be provided on upper surfaces of the first light emitting structure 10 and the second light emitting structure 20. Accordingly, according to the embodiment, the effect of extracting external light can be increased.

The light emitting device according to the embodiment includes a plurality of light emitting cells. Each of the light emitting cells may include a second conductive semiconductor layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer. In addition, the light emitting device may include a contact unit electrically connected to the first conductive semiconductor layer of the first light emitting cell. The electronic device may further include a current or voltage control element electrically connected to the contact portion and the second conductive semiconductor layer of the second light emitting cell adjacent to the first light emitting cell to control the current or voltage. The current or voltage control element may include an npn type transistor or a pnp type transistor. The current or voltage control element may comprise a bipolar transistor or a FET transistor. The contact portion may contact the first conductive semiconductor layer of the first light emitting cell. The electrode may include an electrode electrically connected to the first conductivity-type semiconductor layer of the second light emitting cell.

On the other hand, in the above description based on the case where one current or voltage control element is disposed between the first light emitting cell and the second light emitting cell, two or more current or voltage control element between the first light emitting cell and the second light emitting cell. May be arranged. Electrical connections may also be provided between a plurality of current or voltage control elements. As such, by arranging a plurality of current or voltage control elements between the plurality of light emitting cells, light emission may be selectively realized by providing a current or voltage only to the light emitting cells required.

Next, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 3 to 7.

According to the method of manufacturing the light emitting device according to the embodiment, as shown in FIG. 3, the first conductive semiconductor layer 11a, the active layer 12a, and the second conductive semiconductor layer 13a are formed on the growth substrate 5. Form. The first conductive semiconductor layer 11a, the active layer 12a, and the second conductive semiconductor layer 13a may be defined as a light emitting structure 10a.

The growth substrate 5 may be formed of, for example, at least one of sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, but is not limited thereto. A buffer layer may be further formed between the first semiconductor layer 11 of the first conductivity type and the growth substrate 5.

For example, the first conductivity type semiconductor layer 11a is formed of an n type semiconductor layer to which an n type dopant is added as a first conductivity type dopant, and the second conductivity type semiconductor layer 13a is a second conductivity type dopant. As a p-type dopant may be formed as a p-type semiconductor layer. In addition, the first conductivity type semiconductor layer 11a may be formed of a p-type semiconductor layer, and the second conductivity type semiconductor layer 13a may be formed of an n-type semiconductor layer.

The first conductivity-type semiconductor layer 11a may include, for example, an n-type semiconductor layer. The first conductive semiconductor layer (11a) is of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be formed. The first conductive semiconductor layer 11a may be selected from, for example, InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN, and the like, and doped with n-type dopants such as Si, Ge, Sn, Se, Te, or the like. Can be.

In the active layer 12a, electrons (or holes) injected through the first conductive semiconductor layer 11a and holes (or electrons) injected through the second conductive semiconductor layer 13a meet each other. It is a layer that emits light due to a band gap difference of an energy band according to a material forming the active layer 12a. The active layer 12a may be formed of any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure, but is not limited thereto.

It said active layer (12a) may be formed of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). When the active layer 12a is formed of the multi quantum well structure, the active layer 12a may be formed by stacking a plurality of well layers and a plurality of barrier layers, for example, an InGaN well layer / GaN barrier layer. It may be formed in a cycle.

The second conductivity-type semiconductor layer 13a may be implemented as, for example, a p-type semiconductor layer. The second conductive type semiconductor layer (13a) is of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be formed. The second conductive semiconductor layer 13a may be selected from, for example, InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, InN, and the like, and dopants such as Mg, Zn, Ca, Sr, and Ba may be doped. Can be.

Meanwhile, the first conductivity type semiconductor layer 11a may include a p-type semiconductor layer, and the second conductivity type semiconductor layer 13a may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed on the second conductive type semiconductor layer 13a. Thus, the light emitting structure 10a may include a np, pn, npn, Or a structure thereof. In addition, the doping concentrations of the impurities in the first conductive semiconductor layer 11a and the second conductive semiconductor layer 13a may be uniformly or non-uniformly formed. That is, the structure of the light emitting structure 10a may be variously formed, but is not limited thereto.

In addition, a first conductivity type InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductivity type semiconductor layer 11a and the active layer 12a. In addition, a second conductive AlGaN layer may be formed between the second conductive semiconductor layer 13a and the active layer 12a.

Next, as shown in FIG. 3, the channel layer 16a is formed on the said 2nd conductivity type semiconductor layer 13a.

Subsequently, a semiconductor layer for forming a current or voltage control element is formed on the channel layer 26a and etched to form a first layer 31, a second layer 32, and a third layer as shown in FIG. Layer 33 and fourth layer 34a are formed.

The first layer 31, the second layer 32, the third layer 33, and the fourth layer 34 may be implemented as semiconductor layers. The first layer 31, the second layer 32, the third layer 33, and the fourth layer 34 may be formed of a semiconductor material forming the light emitting structure 10a. It may be implemented with a semiconductor material such as silicon.

For example, the first layer 31 and the fourth layer 34 may be formed of a material similar to that of the first semiconductor layer 11a of the first conductivity type. For example, the first layer 31 and the fourth layer 34 may be implemented as an n-GaN layer. The second layer 32 may be implemented as an AlGaN layer or a p-GaN layer. The third layer 33 may be implemented as an undoped n-GaN layer.

4, current blocking layers 18, 28, 38 and channel layers 16, 36 are formed. Subsequently, a first ohmic contact layer 15 and a first reflective electrode 17 are formed on the first region of the second conductive semiconductor layer 13a. In addition, a second ohmic contact layer 25 and a second reflective electrode 27 are formed on the second region of the second conductive semiconductor layer 13a.

The first ohmic contact layer 15 and the second ohmic contact layer 25 may be formed of, for example, a transparent conductive oxide layer. The first ohmic contact layer 15 and the second ohmic contact layer 25 may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), and aluminum gallium zinc oxide (AGZO). , IZTO (Indium Zinc Tin Oxide), IAZO (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO) Nitride), ZnO, IrOx, RuOx, NiO, Pt, Ag may be formed of at least one material selected from.

The first reflective electrode 17 and the second reflective electrode 27 may be formed of a metal material having a high reflectance. For example, the first reflecting electrode 17 and the second reflecting electrode 27 include at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, Hf. It may be formed of a metal or an alloy. In addition, the first reflecting electrode 17 and the second reflecting electrode 27 may be formed of the metal or the alloy, Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (IZO), or Indium-Zinc-Tin (IZTO). -Oxide, Indium-Aluminum-Zinc-Oxide, IAZO, Indium-Gallium-Zinc-Oxide, IGTO, Indium-Gallium-Tin-Oxide, AZO, Aluminum-Zinc-Oxide, ATO Tin-Oxide) may be formed into a multilayer using a light transmitting conductive material. For example, in some embodiments, the first reflective electrode 17 and the second reflective electrode 27 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy. .

Subsequently, as shown in FIG. 4, a second insulating layer 47 is disposed on side surfaces of the first layer 31, the second layer 32, the third layer 33, and the fourth layer 34. Form. The second insulating layer 47 may be formed of oxide or nitride. The second insulating layer 47 is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of a material having a light transmitting and insulating properties. The second insulating layer 47 may be made of an insulating material such as TiO ₂ , AlN, or the like.

In addition, the first contact portion 43 and the second contact portion 45 are formed. The first contact portion 43 and the second contact portion 45 may be formed of at least one material selected from, for example, Cr, Al, Ti, Ni, Pt, and V. In addition, the first contact portion 43 and the second contact portion 45 may be formed of, for example, a transparent conductive oxide layer. The first contact portion 43 and the second contact portion 45 are, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), or IZTO. (Indium Zinc Tin Oxide), IAZO (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZON (IZO Nitride) , ZnO, IrOx, RuOx, NiO may be formed of at least one material selected from.

In addition, as illustrated in FIG. 4, a first insulating layer may be disposed on the first contact portion 43, the second contact portion 45, the first layer 31, and the second reflective electrode 27. 40). The first insulating layer 40 may be formed of oxide or nitride. The first insulating layer 40 is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of a material having a light transmitting and insulating properties. The first insulating layer 40 may be made of an insulating material, such as TiO ₂ , AlN.

Meanwhile, the process of forming each layer described above is one example, and the process order may be variously modified.

Next, as shown in FIG. 5, a diffusion barrier layer 50, a bonding layer 60, and a support member 70 are formed on the first reflective electrode 17 and the first insulating layer 40. .

In the diffusion barrier layer 50, a material included in the bonding layer 60 diffuses toward the first reflection electrode 17 and the second reflection electrode 27 in a process in which the bonding layer 60 is provided. Can be prevented. The diffusion barrier layer 50 may prevent a material such as tin (Sn) included in the bonding layer 60 from affecting the first reflective electrode 17 or the like. The diffusion barrier layer 50 may include at least one of Cu, Ni, Ti-W, W, and Pt materials.

The bonding layer 60 may include a barrier metal or a bonding metal, and may include, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta. . The support member 70 may support the light emitting device according to the embodiment and may be electrically connected to an external electrode to provide power to the first reflective electrode 17.

The supporting member 70 may be a semiconductor substrate (for example, Si, Ge, GaN, GaAs, or the like) into which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu- ZnO, SiC, SiGe, and the like). In addition, the support member 70 may be implemented with an insulating material. The support member 70 may be made of a material such as Al ₂ O ₃ , SiO ₂ .

Next, the growth substrate 5 is removed from the first conductivity type semiconductor layer 11a. As one example, the growth substrate 5 may be removed by a laser lift off (LLO) process. The laser lift-off process (LLO) is a step of peeling the growth substrate 5 and the first conductive semiconductor layer 11a from each other by irradiating a laser onto the lower surface of the growth substrate 5.

As shown in FIG. 6, isolation etching is performed to separate the first light emitting structure 10 and the second light emitting structure 20. The isolation etching can be performed by, for example, dry etching such as ICP (Inductively Coupled Plasma), but is not limited thereto. Partial regions of the channel layer 26a may be exposed by the isolation etching. In addition, a light extraction pattern may be provided on upper surfaces of the first light emitting structure 10 and the second light emitting structure 20. Concave-convex patterns may be provided on upper surfaces of the first light emitting structure 10 and the second light emitting structure 20. Accordingly, according to the embodiment, the effect of extracting external light can be increased.

Subsequently, a portion of the third layer 33 is exposed by etching the channel layer 26a and etching the fourth layer 34a. In addition, a third insulating layer 36 is formed on the third layer 33 and the fourth layer 34, and a control electrode 35 is formed on the third insulating layer 36.

Meanwhile, the electrode 80 may be disposed on the third semiconductor layer 21 of the first conductivity type. The electrode 80 may be electrically connected to the third semiconductor layer 21 of the first conductivity type. The electrode 80 may be in contact with an upper surface of the third semiconductor layer 21 of the first conductivity type.

Accordingly, the first light emitting structure 10 by the electrode 80 and the first reflective electrode 17. Power may be provided to the second light emitting structure 20. The first light emitting structure 10 and the second light emitting structure 20 are electrically connected in series. Accordingly, when power is applied through the electrode 80 and the first reflective electrode 17, light may be provided from the first light emitting structure 10 and the second light emitting structure 20. In addition, the amount of current and voltage flowing from the first light emitting structure 10 to the second light emitting structure 20 can be controlled by the current or voltage control device according to the embodiment.

According to an embodiment, the electrode 80 may be implemented in a multilayer structure. The electrode 80 may be implemented as an ohmic contact layer, an intermediate layer, and an upper layer. The ohmic contact layer may implement an ohmic contact by including a material selected from Cr, V, W, Ti, and Zn. The intermediate layer may be formed of a material selected from Ni, Cu, Al, and the like. The upper layer may comprise, for example, Au.

As illustrated in FIG. 7, the first region 13b of the second semiconductor layer of the second conductivity type may be formed to be isolated in a plane by the first contact portion 43. In addition, the first contact portion 43 may be electrically insulated from the second semiconductor layer 13 of the second conductivity type by the first channel layer 16.

8 is a view showing another example of the light emitting device according to the embodiment. In the description of the light emitting device according to the exemplary embodiment illustrated in FIG. 8, the description of parts overlapping with those described with reference to FIG. 2 will be omitted.

In the light emitting device according to the embodiment, as shown in FIG. 8, the second contact portion 45 may not be provided. The fourth layer 34 of the current or voltage control element may be implemented to contact the second reflective electrode 27. A first insulating layer 40 may be disposed between the second reflective electrode 27 and the third layer 33, the second layer 32, and the first layer 31 of the current or voltage control element. .

9 is a view showing another example of a light emitting device according to the embodiment. In the description of the light emitting device according to the exemplary embodiment illustrated in FIG. 9, the description of parts overlapping with those described with reference to FIG. 2 will be omitted.

In the light emitting device according to the embodiment, as shown in FIG. 9, the fourth insulating layer 41 may be disposed on the side surface of the first light emitting structure 10. The fourth insulating layer 41 may be disposed on the first light emitting structure 10. The fourth insulating layer 41 may be formed of oxide or nitride. The fourth insulating layer 41 is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of a material having a light transmitting and insulating properties.

The fifth insulating layer 51 may be disposed on the side surface of the second light emitting structure 20. The fifth insulating layer 51 may be disposed on the second light emitting structure 20. The fifth insulating layer 51 may be formed of oxide or nitride. The fifth insulating layer 51 is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of a material having a light transmitting and insulating properties.

The first contact portion 43 may contact an upper portion of the first semiconductor layer 11 of the first conductivity type. For example, the first semiconductor layer 11 of the first conductivity type may be implemented including a GaN layer. In this case, considering the growth direction and the etching direction of the semiconductor layer, the first contact portion 43 may be in contact with the N face (N face) of the first semiconductor layer 11 of the first conductivity type.

The fourth insulating layer 41 may be disposed between the first contact portion 43 and the second semiconductor layer 13 of the second conductivity type. The fourth insulating layer 41 may be disposed between the first contact portion 43 and the first active layer 12. A portion of the first contact portion 43 may be disposed on the fourth insulating layer 41. The first contact portion 43 may be in contact with the top and side surfaces of the fourth insulating layer 41.

10 is a view showing another example of a light emitting device according to the embodiment. In the description of the light emitting device according to the exemplary embodiment illustrated in FIG. 10, a description of portions overlapping with those described with reference to FIG. 2 will be omitted.

According to the light emitting device according to the embodiment, the first ohmic reflective electrode 19 may be disposed under the first light emitting structure 10. The first ohmic reflective electrode 19 may be implemented to perform the functions of both the first reflective electrode 17 and the first ohmic contact layer 15 described with reference to FIG. 2. Accordingly, the first ohmic reflective electrode 19 is in ohmic contact with the second semiconductor layer 13 of the second conductivity type, and may perform a function of reflecting light incident from the first light emitting structure 10. have.

In addition, a second ohmic reflective electrode 29 may be disposed under the second light emitting structure 20. The second ohmic reflective electrode 29 may be implemented to perform both the functions of the second reflective electrode 27 and the second ohmic contact layer 25 described with reference to FIG. 2. Accordingly, the second ohmic reflective electrode 29 is in ohmic contact with the fourth semiconductor layer 23 of the second conductivity type, and may function to reflect light incident from the second light emitting structure 20. have.

11 is a view showing a light emitting device package to which the light emitting device according to the embodiment is applied.

Referring to FIG. 11, the light emitting device package according to the embodiment includes a body 120, a first lead electrode 131 and a second lead electrode 132 disposed on the body 120, and the body 120. The light emitting device 100 according to the embodiment, which is provided to and electrically connected to the first lead electrode 131 and the second lead electrode 132, and the molding member 140 surrounding the light emitting device 100. Include.

The body 120 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first lead electrode 131 and the second lead electrode 132 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first lead electrode 131 and the second lead electrode 132 may increase light efficiency by reflecting light generated from the light emitting device 100, and heat generated from the light emitting device 100. It may also play a role in discharging it to the outside.

The light emitting device 100 may be disposed on the body 120 or on the first lead electrode 131 or the second lead electrode 132.

The light emitting device 100 may be electrically connected to the first lead electrode 131 and the second lead electrode 132 by any one of a wire method, a flip chip method, and a die bonding method.

The molding member 140 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 140 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages may be arranged on a substrate, and an optical member such as a lens, a light guide plate, a prism sheet, and a diffusion sheet may be disposed on an optical path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. The light unit may be implemented as a top view or a side view type and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device. Still another embodiment may be embodied as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a streetlight, an electric signboard, and a headlight.

The light emitting device according to the embodiment may be applied to the light unit. The light unit may include a structure in which a plurality of light emitting elements are arranged, and may include the display device illustrated in FIGS. 12 and 13 and the illumination device illustrated in FIG. 14.

Referring to FIG. 12, the display device 1000 according to the embodiment includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

At least one light emitting module 1031 may be provided, and light may be provided directly or indirectly from one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device or a light emitting device package 200 according to the embodiment described above. The light emitting device package 200 may be arranged on the substrate 1033 at predetermined intervals.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern. However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 200 is provided on the side surface of the bottom cover 1011 or on the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.

In addition, the plurality of light emitting device packages 200 may be mounted such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 200 may directly or indirectly provide light to a light incident portion that is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

13 is a diagram illustrating another example of a display device according to an exemplary embodiment.

Referring to FIG. 13, the display device 1100 includes a bottom cover 1152, a substrate 1020 on which the light emitting device 100 disclosed above is arrayed, an optical member 1154, and a display panel 1155.

The substrate 1020 and the light emitting device package 200 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

14 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 14, the lighting device 1500 may include a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, and may be formed of, for example, a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device or a light emitting device package 200 according to an embodiment provided on the substrate 1532. The plurality of light emitting device packages 200 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device package 200 may be disposed on the substrate 1532. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) chip. The LED chip may include a colored light emitting diode emitting red, green, blue or white colored light, and a UV emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

According to the embodiment, the light emitting device may be packaged and mounted on the substrate to be implemented as a light emitting module, or may be mounted and packaged as an LED chip to be implemented as a light emitting module.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiments, which are merely exemplary and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated above in the range without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

10: first light emitting structure 11: first semiconductor layer
12: first active layer 13: second semiconductor layer
15: first ohmic contact layer 16: first channel layer
17: first reflective electrode 20: second light emitting structure
21: third semiconductor layer 22: second active layer
23: fourth semiconductor layer 25: second ohmic contact layer
26: second channel layer 27: second reflective electrode
31: first layer 32: second layer
33: third layer 34: fourth layer
35: control electrode 36: third insulating layer
40: first insulating layer 41: fourth insulating layer
43: first contact portion 45: second contact portion
47: second insulating layer 50: diffusion barrier layer
51: fifth insulating layer 53: second contact portion
60: bonding layer 70: support member
80: electrode

Claims (16)

A first light emitting structure comprising a first semiconductor layer of a first conductivity type, a first active layer under the first conductive layer of the first conductivity type, and a second semiconductor layer of a second conductivity type under the first active layer;
A first reflective electrode under the first light emitting structure;
A second light emitting structure comprising a third semiconductor layer of a first conductivity type, a second active layer under the third conductive layer of the first conductivity type, and a fourth semiconductor layer of a second conductivity type under the second active layer;
A second reflecting electrode under the second light emitting structure;
A contact portion electrically connected to the first semiconductor layer of the first conductivity type;
A current or voltage control element electrically connected to the contact portion and the second reflection electrode to control a current or voltage applied to the contact portion or the second reflection electrode;
Light emitting device comprising a. The method of claim 1,
And the contact portion is in contact with the first semiconductor layer of the first conductivity type. The method of claim 1,
And the contact portion is in contact with the first semiconductor layer of the first conductivity type. The method of claim 1,
The contact portion is in contact with the upper surface of the first semiconductor layer of the first conductivity type. The method of claim 1,
The current or voltage control device includes an npn type transistor or a pnp type transistor. The method of claim 1,
The current or voltage control device includes a bipolar transistor or a FET transistor. The method of claim 1,
A light emitting device comprising irregularities provided on an upper surface of the first semiconductor layer of the first conductivity type. The method of claim 1,
And the contact portion is in contact with the Ga surface of the first semiconductor layer when the first semiconductor layer of the first conductivity type comprises a GaN layer. The method of claim 1,
And the contact portion is in contact with the N surface of the first semiconductor layer when the first semiconductor layer of the first conductivity type includes a GaN layer. A plurality of light emitting cells each comprising a second conductive semiconductor layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer;
A contact unit electrically connected to a first conductive semiconductor layer of a first light emitting cell among the plurality of light emitting cells;
A current or voltage control element electrically connected to the second conductive semiconductor layer of the second light emitting cell adjacent to the contact portion and the first light emitting cell to control a current or voltage;
Light emitting device comprising a. The method of claim 10,
The current or voltage control device includes an npn type transistor or a pnp type transistor. The method of claim 10,
The current or voltage control device includes a bipolar transistor or a FET transistor. The method of claim 10,
And the contact portion is in contact with the first conductive semiconductor layer of the first light emitting cell. The method of claim 10,
The contact portion is in contact with the upper surface of the first conductivity type semiconductor layer of the first light emitting cell. Body;
The light emitting device according to any one of claims 1 to 14, which is disposed on the body.
A first lead electrode and a second lead electrode electrically connected to the light emitting device;
Emitting device package. Board;
A light emitting element according to any one of claims 1 to 14 arranged on the substrate;
An optical member through which light provided from the light emitting device passes;
Light unit comprising a.

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