KR20100013148A - Apparatus for processing substrate and method for processing substrate - Google Patents

Abstract

The present invention includes a chamber for providing a closed space, a side electrode portion disposed at an upper portion of the chamber, and providing at least a lower inner space and a plurality of substrate supports spaced apart from each other. Provided is a substrate processing apparatus including a substrate stacking portion that can be elevated to and from an inner space, and a substrate processing method using the same.

In the present invention, a plurality of substrates are spaced up and down so as to be parallel to each other, and the electrode portion for plasma formation is disposed on the side of the substrate holder, and then plasma is generated on the side of the substrate holder. The plasma treatment may be performed simultaneously on a plurality of substrates loaded in the substrate placing portion in the single chamber. Thus, the plasma process time for a plurality of substrates can be significantly shortened.

Description

Substrate processing apparatus and substrate processing method {APPARATUS FOR PROCESSING SUBSTRATE AND METHOD FOR PROCESSING SUBSTRATE}

The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus and a substrate processing method capable of simultaneously performing a plasma processing for a plurality of substrates in a single chamber.

The semiconductor device formed on the substrate is manufactured by performing a thin film deposition and etching process. That is, by forming a thin film in a predetermined region of the substrate by performing a deposition process, by performing an etching process using an etching mask to remove a portion of the unnecessary thin film to form a desired predetermined circuit pattern (pattern) or circuit element on the substrate Is produced. Such deposition and etching processes are typically repeated several times until a desired circuit pattern is obtained.

On the other hand, when the thin film is deposited, the thin film may be deposited not only on the center region of the desired substrate but also on the edge region and the back region of the unwanted substrate. In addition, even when the thin film is etched, various by-products, ie, particles, remaining in the etching apparatus may be adsorbed to the edge region and the back region of the substrate. In addition, an electrostatic chuck for fixing the substrate so as not to move during the process is typically provided on a stage on which the substrate is seated. An interface between the substrate and the electrostatic chuck is spaced a predetermined distance apart, and a gap is generated. This gap allows thin films and particles to be deposited on the entire back surface of the substrate. If a subsequent subsequent process is performed without removing the thin film and particles deposited on the substrate, many problems may occur such as the substrate is bent or the alignment of the substrate becomes difficult. Therefore, the edge region or the back region of the substrate on which deposition and etching is completed must be etched using a separate edge etching apparatus and a back etching apparatus to remove unnecessary thin films and particles. In addition, in the manufacture of a wafer (wafer), ingots are cut and thinned, and then one surface on which the device is formed through a mechanical or chemical polishing process is mirror-treated. At this time, polishing treatment (or surface treatment) on the edge region of the wafer is performed together with the mirror surface treatment. In this case, plasma treatment is also required.

However, in the related art, since only one substrate may be processed in a single chamber, a process cost increases during plasma processing of a plurality of substrates, thereby increasing manufacturing costs.

The present invention is derived to solve the above problems, a plurality of substrates spaced up and down spaced apart, forming a plasma on the side, a substrate that can simultaneously perform a plasma treatment for a plurality of substrates in a single needle Its purpose is to provide a processing apparatus and a substrate processing method.

A substrate processing apparatus according to an aspect of the present invention for achieving the above object, the chamber providing a closed space; A side electrode part disposed on an upper portion of the inside of the chamber and providing an inner space opened at least downwardly; And a substrate holder having a plurality of substrate supports spaced apart from each other in a vertical direction and capable of lifting up and down into an inner space of the side electrode part. It includes.

Preferably, the present invention further includes a lift driver for lifting the substrate holder, and further includes a gas supply unit for supplying a reaction gas into the chamber.

Preferably, the side electrode portion includes at least one injection hole, and the injection hole may be formed of any one of a circular structure, an elliptic structure, and a slit structure.

Preferably, the side electrode portion includes a single sidewall that can surround the side of the substrate loading portion or a plurality of sidewalls that can partially surround.

Preferably, the single sidewall is formed in a cylindrical shape, and the space between the bottom of the sidewall and the inner wall of the chamber may be sealed by a sealing member.

The substrate holder includes a horizontal frame, a vertical frame coupled vertically to the horizontal frame, and a plurality of substrate supports extending in a horizontal direction at different heights of the vertical frame.

Each of the plurality of substrate supports is preferably formed of aluminum metal or anodized metal.

Each of the plurality of substrate supports is preferably spaced at intervals of 0.1 to 0.7 mm.

Each of the plurality of substrate supports preferably includes a support for supporting a substrate and a connection for connecting the support and the vertical frame.

The diameter of the support portion is preferably smaller than the diameter of the substrate, it is preferable that the support portion is spaced apart from the vertical frame by a connecting portion extending from one side of the lower surface.

It is preferable that a ground power is applied to the sidewall electrode portion, and a high frequency power is applied to the substrate storage portion.

The present invention may further include a stage that is installed in the lower portion of the inside of the chamber, the substrate loading portion detachably placed. Preferably, the stage is provided with a fixing portion for fixing the substrate placing portion and a socket portion for connecting a high frequency power source to the substrate placing portion.

Substrate processing method according to another aspect of the present invention for achieving the above object comprises the steps of providing a substrate loading portion having a plurality of substrate support; Stacking a plurality of substrates vertically on the plurality of substrate supports; Spraying a reaction gas on side surfaces of the plurality of substrates; And forming a plasma on side surfaces of the plurality of substrates to plasma process an edge region of the substrate; It includes.

Prior to the step of stacking the substrates, bringing the substrate stack into the chamber; It is preferable to further include.

After the step of stacking the substrates, bringing the substrate stack into the chamber; It is preferable to further include.

According to the present invention, a plurality of substrates are spaced up and down so as to be parallel to each other, and the electrode portion for plasma formation is disposed on the side of the substrate holder, and then plasma is generated on the side of the substrate holder. Plasma processing may be performed simultaneously on a plurality of substrates placed in the substrate placing portion in the chamber. Thus, the plasma process time for a plurality of substrates can be significantly shortened.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and to those skilled in the art the scope of the invention. It is provided for complete information. Like reference numerals in the drawings refer to like elements.

1 is a schematic view showing a substrate processing apparatus according to a first embodiment of the present invention, Figure 2 is an enlarged cross-sectional view showing the substrate loading portion of FIG.

Referring to FIG. 1, the substrate processing apparatus according to the present exemplary embodiment may include a chamber 100 that provides a predetermined sealed space, and an inner space that is disposed above and at least downwardly opened inside the chamber 100. A substrate placing portion 300 having a side electrode portion 200, a plurality of substrate supporting portions disposed under the side electrode portion 200 and spaced vertically apart from each other, and the substrate placing portion 300 being the side electrode; It includes a lifting unit 400 for entering the internal space of the unit 200. In addition, the substrate processing apparatus according to the present exemplary embodiment further includes a gas supply unit 150 for supplying a reaction gas into the chamber 100 and a gas exhaust unit 140 for exhausting residual gas in the chamber 100. Here, the substrate 10 refers to a base material that can be used in the semiconductor process, and includes a conventional wafer or glass panel.

The chamber 100 includes a chamber body 110 having a predetermined space therein, and a chamber lid 120 covering the chamber body 110. The chamber body 110 is manufactured in a cylindrical shape with an open top. Of course, the internal shape of the chamber body 110 may be variously changed according to the shape of the substrate 10. The chamber lid 120 serves to cover the upper portion of the chamber body 110 and is hermetically connected to the upper portion of the chamber body 110 to form an airtight reaction space in the chamber 100. In addition, the chamber lid 120 is installed to be opened and closed with the chamber body 110. Through this, maintenance such as cleaning of the reaction space provided in the chamber 100 and replacement of consumables can be easily performed.

An inlet (not shown) for introducing a reaction gas into the chamber 100 is formed on an upper wall of the chamber 100. The inlet port communicates with one side of the inlet pipe 151 provided outside the chamber 100, and the other side of the inlet pipe 151 is connected to the gas supply unit 150 provided outside the chamber. In addition, the lower wall of the chamber 100 is formed with a through hole (not shown) through which the elevating drive shaft 420 penetrates and lowers the substrate placing unit 300. In addition, an exhaust port (not shown) is formed on one side wall of the chamber 100 to exhaust residual gas inside the chamber 100. The exhaust port (not shown) communicates with one side of the exhaust pipe 141 provided at the outside of the chamber, and the other side of the exhaust pipe 141 is connected to the gas exhaust unit 140 provided at the outside of the chamber, for example, a vacuum pump. On the other hand, a gate 130 for loading and unloading the substrate 10 is formed on the other side wall of the chamber 100. In the chamber 100 according to the present embodiment, the gate 130 is formed only on one side wall, but the gate 130 may be formed on the other side wall of the chamber 100 facing the gate 130. At this time, one gate 130 is used to carry in the substrate 10 to be processed, and the other gate is preferably used to carry out the processed substrate 10. Of course, the number and location of formation of the inlet, the exhaust port, and the gate may be variously changed.

The side electrode part 200 is composed of sidewalls 202 having a predetermined height disposed on the side of the substrate loading part 300 moved to the upper region inside the chamber 100. The sidewalls 202 may be a single sidewall that entirely surrounds the side surfaces of the substrate loading part 300, or may be a plurality of sidewalls partially surrounding the side surfaces of the substrate loading part 300. For example, the side electrode part 200 according to the present embodiment is formed of a single cylindrical side wall, the upper part of which is closed and the lower part of which is opened. Accordingly, a predetermined space that is opened downward is formed in the side electrode part 200. In addition, the side electrode part 200 is installed in the upper region inside the chamber 200, and the space between the bottom of the side wall 202 of the side electrode part 200 and the inner wall of the chamber 100 is a sealing member 230. It is sealed by. Accordingly, the inside of the chamber 100 has a reaction space A1 formed around the inner space of the side electrode portion 200 and an unreacted space A2 formed between the side electrode portion 200 and the inner wall of the chamber 100. ) Can be separated. The inlet formed in the upper wall of the chamber 100 is preferably formed to communicate with the non-reaction space (A2). In addition, the side electrode part 200 is installed to be electrically insulated from the chamber 100. To this end, a first insulating member 221 formed of an insulating material is provided between the upper wall 203 of the side electrode part 200 and the upper wall of the chamber 100, and the lower sidewall of the side electrode part 200 and the chamber are provided. The sealing member 230 for sealing the space between the inner walls of the 100 is also preferably formed of an insulating material. It is preferable to use ceramic as the insulating material. On the other hand, a plurality of injection holes 201 are formed in the side wall 202 of the side electrode part 200 to communicate with the non-reaction space A2 and inject the reaction gas into the reaction space A1. Therefore, the reaction gas supplied from the reaction gas supply unit 150 is introduced into the non-reaction space A2 inside the chamber 100 through the inlet pipe 151 to the reaction space A1 through the plurality of injection holes 201. It can be sprayed uniformly. In addition, a ground power is applied to the side electrode part 200 to form a plasma in the reaction space A1 together with the substrate loading part 300 to which the high frequency power is applied. In this case, the plasma is relatively close to the reaction space between the sidewall 202 of the side electrode portion 200 and the side surface of the substrate loading portion 300 so that the plasma treatment on the edge region of the substrate 10 may be performed more efficiently. It is preferably formed to have a distribution. Therefore, it is preferable that the second insulating member 222 formed of an insulating material is provided on the lower surface of the upper wall 203 of the side electrode part 200. As a result, the generation of plasma in the upper region of the substrate 10 can be prevented to some extent. As the insulating material, it is preferable to use the aforementioned ceramics. Meanwhile, the plurality of injection holes 201 provided on the sidewalls of the side electrode part 200 may be formed to have various opening structures. For example, the injection hole 210 may be formed in a circular structure, or an ellipse structure or a slit structure in which one of the long axis and the short axis of the opening is formed long. In addition, the plurality of injection holes 201 may be formed to have a vertical gap equal to the interval between the substrate supports (330a to 330e of FIG. 2) stacked vertically.

Referring to FIG. 2, the substrate placing unit 300 may have a horizontal frame 310, a vertical frame 320 vertically coupled to the horizontal frame 310, and a horizontal direction at different heights of the vertical frame 320. It includes a plurality of substrate support 330 extended to.

The horizontal frame 310 serves as a housing protecting the lower surface of the substrate support 330, and the vertical frame 320 serves as a support shaft supporting at least one side of the substrate support 330 from the side. . Therefore, as shown in FIG. 2, the vertical frame 320 may be provided in a singular number. Alternatively, the vertical frame 320 may be provided in plural numbers. That is, the plurality of vertical frames 320 may be connected to the horizontal frame 310, and each of the substrate supports 330a to 330e may be supported by at least two points by the plurality of vertical frames 320.

Each substrate support 330a to 330e includes a support 331 supporting the substrate 10a and a connection 332 connecting the support 331 and the vertical frame 320. The support part 331 of the present embodiment is manufactured in a disc shape to support the substrate 10a at the bottom. Of course, the support part 331 may be changed into various shapes such as circular, elliptical or polygonal according to the shape of the substrate 10a. In addition, the diameter of the support portion 331 is made smaller than the diameter of the substrate 10a, the support portion 331 is spaced apart from the vertical frame 320 by a predetermined distance from the connecting portion 332 extending from one side of the lower surface. It is preferred to be connected. As a result, a predetermined space may be formed under the edge region of the substrate 10 positioned on the support part 331, and plasma may freely flow into the space, so that the etching of the substrate under the edge region of the substrate 10a is smooth. Can be performed. Although not shown, a chuck unit for fixing the substrate 10a may be provided on the support 331. The chuck unit may fix the substrate 10a mounted on the upper surface of the chuck by various fixing means using mechanical force, electrostatic force, vacuum suction force, and the like. For example, an electrostatic chuck including an insulating plate and a DC electrode (not shown) installed therein may be provided on the support part 331. Here, the insulating plate may use a polyimide plate or a ceramic plate, and the DC electrode may use a metal material such as tungsten. The DC electrode serves to stably fix the substrate 10a seated on the upper portion of the insulating plate by generating the electrostatic force by receiving DC power.

Meanwhile, each of the substrate supports 330a to 330e receives a high frequency power from a power supply unit 500 provided outside the chamber 100 and functions as a plasma electrode to generate a plasma together with the side electrode unit 200. In this case, the power supply unit 500 may provide a high frequency power source, for example, an RF power source, which is impedance matched to the load of the substrate placing unit 300. Therefore, each of the substrate supports 330a to 330e is preferably formed of a conductive material. For example, in this embodiment, the horizontal frame 310, the vertical frame 320, and each of the substrate supports 330a to 330e are all made of aluminum metal or are anodized to be applied to the horizontal frame 310. RF power applied to the respective substrate supports 330a to 330e is supplied. Of course, only each of the substrate supports 330a to 330e may be formed of a conductive material, so that RF power may be directly applied to each of the substrate supports 330a to 330e. In addition, although not shown, an insulating member may be provided below the support part 331, and the separation interval of each of the substrate supports 330a to 330e may be an interval at which plasma cannot be activated, for example, 0.1 to 0.7 mm. Can be adjusted. As a result, plasma treatment may be performed on the edge region of the substrate while preventing plasma from being formed on the upper surface of the substrate seated on the lower substrate support by the upper substrate support.

The elevating unit 400 includes an elevating driving unit 410 provided outside the chamber 100, and an elevating driving shaft 420 elevating by the elevating driving unit 410. One end of the elevating drive shaft 420 is connected to the elevating drive unit 410, and the other end thereof extends into the chamber 100 to be connected to the bottom surface of the substrate placing unit 300. At this time, it is preferable that an airtight means (not shown) for maintaining airtightness inside the chamber 100 is provided at a connection portion of the chamber 100 through which the lifting drive shaft 420 passes. In addition, an outer side of the elevating drive shaft 420 may be provided with an expandable bellows in accordance with the vertical movement of the elevating drive shaft 420. The substrate loading part 300 may rise by the lifting part 400 to enter the inner space of the side electrode part 200. Meanwhile, a rotating unit (not shown) may be provided together with the elevating unit 400 to configure the substrate stacking unit 300 to be rotatable, thereby rotating the substrate stacking unit 300 to thereby edge the substrate 10. The area can be adjusted to be uniformly exposed to the plasma.

On the other hand, the substrate processing apparatus according to the present embodiment having such a configuration can simultaneously process a plurality of substrates in a single chamber, which will be described in more detail as follows.

3 and 4 are chamber schematic diagrams for explaining an operation process of the substrate processing apparatus according to the first embodiment of the present invention.

First, referring to FIG. 3, when a plurality of substrates 10a to 10e requiring plasma processing are provided, the substrate loading part 300 is moved up and down to move the substrate loading part 300 to the position of the gate 130. . Subsequently, the gate 130 is opened to bring in a plurality of substrates 10a to 10e into the chamber 100, and each of the substrate supports provided in the substrate stacking unit 300 is loaded with the plurality of substrates 10a to 10e. One by one on 330a to 330e). At this time, the substrate surfaces of the plurality of substrates 10 are placed in parallel with each other by the substrate supports 330a to 330e disposed in parallel to each other. 4, when the substrates 10a to 10e are deposited on all of the substrate supports 330a to 330e, the substrate loading part 300 is moved upward to enter the internal space of the side electrode part 200. . Subsequently, the reaction gas is injected into the side region of the substrate loading part 300 through the injection hole 201 of the side electrode part 200, and RF power is applied to the substrate loading part 300 to provide the substrate loading part 300 with the substrate loading part 300. Generate plasma in the side region. Due to the plasma, an etching process is performed on the edge regions of the substrates 10a to 10e. As described above, the substrate processing apparatus according to the present embodiment may simultaneously perform plasma processing on the plurality of substrates 10a to 10e in the single chamber 100, thereby significantly shortening the process time.

Second Embodiment

In addition, the above-mentioned substrate processing apparatus is not limited to the above-mentioned structure, Various embodiments are possible. In the following, the substrate processing apparatus according to the second embodiment of the present invention will be described as an example of such a possibility. In this case, a description overlapping with the above-described embodiment will be omitted or briefly described.

FIG. 5 is a schematic view showing a substrate processing apparatus according to a second embodiment of the present invention, and FIG. 6 is an enlarged cross-sectional view showing the substrate loading portion of FIG. 5.

Referring to FIG. 5, the substrate processing apparatus according to the present exemplary embodiment may include a chamber 100 that provides a predetermined sealed space, and an inner space that is disposed above and at least downwardly opened inside the chamber 100. A substrate having a side electrode portion 600, a stage 800 which is installed to be lifted below the side electrode portion 600, and a plurality of substrate support seated on the stage 800 and spaced vertically The placing part 700 and the lifting part 400 for entering the substrate placing part 700 into the inner space of the side electrode part 600 are included.

The side electrode part 600 is formed of a single side wall that surrounds the side surface of the substrate loading part 700 in a cylindrical shape. At this time, the lower side of the cylindrical side wall and the upper side wall are formed to be open. In addition, the side electrode part 600 is installed in the upper region inside the chamber 100, and the space between the bottom of the side wall 602 of the side electrode part 600 and the inner wall of the chamber 100 is a sealing member 230. It is sealed by. Accordingly, the inside of the chamber 100 has a reaction space A1 formed around the inner space of the side electrode portion 200 and an unreacted space A2 formed between the side electrode portion 600 and the inner wall of the chamber 100. ) Can be separated. In addition, a first insulating member 221 formed of an insulating material is provided between the side electrode part 600 and the upper wall of the chamber 100 to be electrically insulated.

An upper portion of the stage 800 is provided with a fixing portion 810 for fixing the substrate placing portion 700 and a socket portion 820 connecting RF power to the substrate placing portion 700. Therefore, the substrate loading part 700 carried into the chamber 100 and seated in a predetermined area on the upper stage 800 is fixed through the fixing part 810 to prevent flow, and the power source outside the chamber 100 is prevented. RF power applied from the supply unit 500 is transferred to the substrate storage unit 700 through the socket unit 820. In addition, although not shown, cooling means for maintaining a constant process temperature inside the chamber 100 may be provided inside the stage 800. That is, a cooling tube connected to an external cooling water circulation unit may be installed in the body of the stage 800 so that the cooling water may be circulated through the cooling tube. Of course, the body portion of the stage 800 may be provided with heating means such as a heating coil, a lamp heater, etc. together with or instead of the cooling means described above.

In particular, referring to FIG. 6, unlike the above-described embodiment, the substrate loading part 700 is configured to be separated from the lifting part 400. That is, the lifting drive shaft 420 of the lifting unit 400 is connected to the lower portion of the stage 800, and the substrate loading unit 700 is detachably seated on the stage 800. In addition, the gate 160 may be formed larger than the substrate loading part 700 so that the substrate loading part 700 may freely enter and exit the substrate loading part 700. As such, since the substrate loading unit 700 is separated from the lifting unit 400 and configured to be freely movable, the substrate loading unit 700 may perform the substrate loading operation outside the chamber 100. In general, when the substrate stacking operation is performed in the chamber 100, not only the work speed is slow due to the narrow space, but also the substrate 10 may be in contact with the surrounding components and be damaged. In addition, since the robot arm, which is a substrate transfer means, moves in and out of the chamber 100 from time to time, the contaminants may be introduced into the chamber 100. However, in the case of the substrate processing apparatus according to the present embodiment, since the substrate stacking operation can be performed outside the chamber 100, a rapid substrate stacking is possible, and there is little possibility of contamination inside the chamber 100.

Third Embodiment

7 is a schematic view showing a substrate processing apparatus according to a third embodiment of the present invention.

Referring to FIG. 7, the substrate processing apparatus according to the present exemplary embodiment may include a chamber 100 that provides a predetermined sealed space, and an inner space that is disposed above and at least downwardly opened inside the chamber 100. The substrate placing portion 300 and the substrate placing portion 300 having a side electrode portion 910 and a plurality of substrate supporting portions disposed below the side electrode portion 910 and spaced vertically apart from each other are disposed in the side electrode portion. It includes a lifting unit 400 for entering the interior space of the (910).

The side electrode portion 910 is formed of a cylindrical side wall 912 with an opening at the bottom thereof. Unlike the above-described embodiment, the space between the side wall 912 of the side electrode portion 910 and the inner wall of the chamber 100 is opened without being sealed by the sealing member 230 (FIG. 12). That is, a single reaction space is formed inside the chamber 100. In addition, a plurality of injection holes 911 having a plurality of sizes are formed on the sidewall 912 of the side electrode part 910, and the injection holes 911 may be formed on an upper end of the side wall of the side electrode part 910. . Therefore, the reaction gas introduced into the chamber 100 through the inlet pipe 151 is injected into the upper space inside the chamber 100, and then the sidewalls 912 of the side electrode part 910 by the injection pressure and gravity. The edge region of the substrate 10 is plasma treated while moving to the lower space inside the chamber 100 via a space between the substrate 10 introduced into the inner space of the side electrode part 910. Of course, in the side electrode portion 910, as in the above-described embodiment, the injection hole 911 may be formed in a fine size and may be provided in plurality.

In addition, the side electrode portion 910 may be fixedly installed on the upper wall inside the chamber 100, but may be connected to at least one driving means 920 to be rotatable or left / right / rearward. For example, in this embodiment, the elevating drive shaft 922 is coupled to the upper surface of the side electrode portion 910, which is manufactured in a cylindrical shape, and the upper portion thereof is blocked, and the elevating drive shaft 922 extends outside the chamber 100. The lifting drive shaft 922 is coupled to the lifting drive unit 921 for applying the lifting force. Through this, the side electrode portion 910 itself may be lowered to allow the substrate loading portion 300 to enter the internal space of the side electrode portion 910. As such, in the substrate processing apparatus according to the present exemplary embodiment, both the side electrode part 910 and the substrate loading part 300 are configured to be liftable, thereby controlling the plasma process in various ways.

On the other hand, the plasma electrode for generating a plasma in the substrate processing apparatus according to the present invention may be provided not only inside the chamber but also outside the chamber, and may be provided in the form of an antenna rather than an electrode. In addition, not only an RF power but also a DC power supply may be used as the plasma power supply. In addition, the substrate processing apparatus according to the present invention may be used not only in a thin film etching process but also in various processes using plasma, for example, a thin film deposition process and a thin film cleaning process.

As mentioned above, although this invention was demonstrated with reference to the above-mentioned Example and an accompanying drawing, this invention is not limited to this, It is limited by the following claims. Therefore, one of ordinary skill in the art will appreciate that the present invention can be variously modified and modified without departing from the technical spirit of the following claims.

1 is a schematic diagram showing a substrate processing apparatus according to a first embodiment of the present invention.

FIG. 2 is an enlarged cross-sectional view of the substrate placing portion of FIG. 1. FIG.

3 and 4 illustrate an operation process of a substrate processing apparatus according to a first embodiment of the present invention.

Schematic diagram for explaining.

5 is a schematic view showing a substrate processing apparatus according to a second embodiment of the present invention.

FIG. 6 is an enlarged cross-sectional view of the substrate placing portion in FIG. 5; FIG.

7 is a schematic view showing a substrate processing apparatus according to a third embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100: chamber 130: gate

140: gas exhaust unit 150: gas supply unit

200: side electrode portion 300: substrate storage portion

400: lift 500: power supply

700: stage

Claims (21)

A chamber providing a closed space; A side electrode part disposed on an upper portion of the inside of the chamber and providing an inner space opened at least downwardly; And A substrate holder having a plurality of substrate supports spaced apart from above and below, and capable of lifting up and down into an inner space of the side electrode unit; Substrate processing apparatus comprising a. The method according to claim 1, And a lift driver for lifting the substrate stacker. The method according to claim 1, And a gas supply unit supplying a reaction gas into the chamber. The method according to claim 1, And the side electrode portion includes at least one injection hole. The method according to claim 4, The injection hole is a substrate processing apparatus formed of any one of a circular structure, an elliptic structure and a slit structure. The method according to claim 1, And the side electrode portion includes a single sidewall that can completely surround the side of the substrate stack or a plurality of sidewalls that can partially surround. The method according to claim 6, And said single sidewall has a cylindrical shape. The method according to claim 6, And a space between the bottom of the side wall and the side wall of the chamber is sealed by a sealing member. The method according to claim 1, The substrate loading portion, Horizontal frame; A vertical frame coupled vertically with the horizontal frame; And And a plurality of substrate supports extending in a horizontal direction at different heights of the vertical frame. The method according to claim 9, And each of the plurality of substrate supports is formed of an aluminum metal or an anodized metal. The method according to claim 9, And each of the plurality of substrate supports is spaced at intervals of 0.1 to 0.7 mm. The method according to claim 9, Each of the plurality of substrate supports includes a support part supporting a substrate and a connection part connecting the support part and the vertical frame. The method according to claim 12, Substrate processing apparatus having a diameter smaller than that of the substrate The method according to claim 12, And the support part is spaced apart from the vertical frame by a connection part extending from one side of the lower surface. The method according to claim 1, And a ground power source is applied to the sidewall electrode unit, and a high frequency power source is applied to the substrate storage unit. The method according to claim 1, And a stage disposed below the inside of the chamber to allow the substrate loading portion to be detachably placed. The method according to claim 16, The stage processing apparatus is provided with a fixing portion for fixing the substrate loading portion in the stage. The method according to claim 16, And the socket portion is provided with a socket portion for connecting a high frequency power supply to the substrate placing portion. Providing a substrate stack having a plurality of substrate supports; Stacking a plurality of substrates vertically on the plurality of substrate supports; Spraying a reaction gas on side surfaces of the plurality of substrates; And Forming a plasma on side surfaces of the plurality of substrates to plasma process an edge region of the substrate; Substrate processing method comprising a. The method according to claim 19, Prior to the step of stacking the substrates, bringing the substrate stack into the chamber; Substrate processing method further comprising. The method according to claim 19, After the step of stacking the substrates, bringing the substrate stack into the chamber; Substrate processing method further comprising.

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