KR20100000685A - Conductive paste composition and preparation of electrode using same - Google Patents
Conductive paste composition and preparation of electrode using same Download PDFInfo
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- KR20100000685A KR20100000685A KR1020080060275A KR20080060275A KR20100000685A KR 20100000685 A KR20100000685 A KR 20100000685A KR 1020080060275 A KR1020080060275 A KR 1020080060275A KR 20080060275 A KR20080060275 A KR 20080060275A KR 20100000685 A KR20100000685 A KR 20100000685A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
본 발명은 도전성 페이스트 조성물, 특히 태양광 전지의 전극 제조에 유용한 도전성 페이스트 조성물에 관한 것이다.The present invention relates to conductive paste compositions, in particular conductive paste compositions useful for the production of electrodes in photovoltaic cells.
태양광 전지(solar cell)는 태양에너지를 전기에너지로 변환시켜주는 반도체 소자로서 일반적으로 p형의 반도체와 n형의 반도체의 접합형태를 가지며 그 기본 구조는 다이오드와 동일하다.A solar cell is a semiconductor device that converts solar energy into electrical energy. In general, a solar cell has a junction type of a p-type semiconductor and an n-type semiconductor, and its basic structure is the same as that of a diode.
태양광 전지에 빛이 입사되면 흡수되어 빛과 태양광 전지의 반도체를 구성하고 있는 물질과의 상호작용이 일어난다. 그리고 (-)전하와 (+)전하를 띤 전자와 전자가 빠져나간 정공이 발생하여 전류가 흐르거나 전기 그 자체가 발생하기도 한다. 이것을 반도체의 광전효과라고 한다. When light enters a photovoltaic cell, it is absorbed and interacts with the materials that make up the semiconductor of the photovoltaic cell. In addition, electrons with negative and negative charges and holes that escape electrons are generated and current flows or electricity itself is generated. This is called the photoelectric effect of semiconductors.
반도체에는 (-)전하를 띤 전자를 끌어당기는 n형 반도체와 (+)전하를 띠는 정공을 끌어당기는 p형 반도체의 두 종류가 있는데, 반도체에서 발생한 (-)전하는 n형 반도체 쪽으로, (+)전하는 p형 반도체 쪽으로 끌어 당겨져 각각 양쪽의 전극부에 모이면, 양쪽의 전극을 전선으로 연결하면 전기가 흐르므로 전력을 얻을 수 있게 된다. There are two types of semiconductors: n-type semiconductors that attract positively-charged electrons and p-type semiconductors that attract positively-charged holes. When the electric charges are pulled toward the p-type semiconductor and collected at both electrode portions, the electric current flows when both electrodes are connected by wires, thereby obtaining power.
결정질 실리콘 태양광 전지(crystalline silicon solar cell)는 크게 단결정(single crystalline) 형태와 다결정(polycrystalline) 형태의 재료로 나뉘며 기본적으로 p-n 동종접합(homojunction)으로서 태양광 전지에 사용된다. 단결정은 순도가 높고 결정 결함 밀도가 낮은 고품위의 재료로서 당연히 높은 효율을 달성할 수 있으나 고가인 반면, 다결정 재료는 상대적으로 저급한 재료를 저렴한 공정으로 처리하여 상용화가 가능한 정도의 효율의 전지를 낮은 비용으로 생산하려는 의도로 사용된다. 단결정 실리콘을 사용한 전지는 집광장치를 사용하지 않은 경우의 효율이 약 24% 정도이며 집광장치를 사용한 전지는 28% 이상의 효율이 있음이 알려져 있다. 그리고, 다결정 실리콘 전지는 약 18% 효율이 있음이 알려져 있는데, 실질적으로 효율의 도달 한계치는 단결정이 35%, 다결정이 19% 정도가 된다. Crystalline silicon solar cells are largely divided into single crystalline and polycrystalline materials and are basically used in photovoltaic cells as p-n homojunctions. Single crystal is a high quality material with high purity and low crystal defect density, which can naturally achieve high efficiency, but it is expensive, whereas polycrystalline material is a low cost process that can be commercialized by processing a relatively low quality material in a low cost process. Used to produce It is known that a battery using single crystal silicon has an efficiency of about 24% when a light concentrator is not used, and a battery using a light concentrator has an efficiency of 28% or more. It is known that a polycrystalline silicon battery has an efficiency of about 18%, but practically, the limit of efficiency reaches 35% for single crystal and 19% for polycrystal.
그러나, 기존 태양광 전지 제조에 사용되는 전극용 페이스트 조성물은 전극 페이스트를 인쇄한 후 150 내지 250℃ 온도범위 내에서 1 내지 2 분간 가열 건조하는 단계를 거치고 750℃에서 수십초 동안 소성공정을 거치는 동안에 종횡비가 무너져서 수광영역이 줄어들어 효율이 나빠지는 문제가 있다.However, the electrode paste composition used in the conventional photovoltaic cell manufacturing is subjected to heat drying for 1 to 2 minutes within a temperature range of 150 to 250 ° C. after printing the electrode paste, and then undergoing a baking process at 750 ° C. for several tens of seconds. There is a problem in that the aspect ratio is collapsed and the light receiving area is reduced, resulting in poor efficiency.
따라서 본 발명의 목적은 전극 페이스트 인쇄후 건조와 소성시 막 무너짐을 개선시킬 수 있는 전도성 페이스트 조성물을 제공하고자 하는 것이다.Accordingly, an object of the present invention is to provide a conductive paste composition that can improve film collapse during drying and firing after electrode paste printing.
본 발명의 두번째 목적은, 본 발명에 따른 전도성 페이스트 조성물을 이용한 전극 제조방법을 제공하고자 하는 것이다.It is a second object of the present invention to provide an electrode manufacturing method using the conductive paste composition according to the present invention.
본 발명의 세번째 목적은, 본 발명에 따른 전극 제조방법으로 제조된 전극을 포함하는 태양광 전지를 제공하고자 하는 것이다.A third object of the present invention is to provide a solar cell including an electrode manufactured by the electrode manufacturing method according to the present invention.
상기 목적에 따라, 본 발명에서는 바인더수지, 희석제, 도전성 금속 재료, 유리 프릿(frit) 및 무기 요변제를 포함하는 도전성 페이스트 조성물을 제공한다. In accordance with the above object, the present invention provides a conductive paste composition comprising a binder resin, a diluent, a conductive metal material, a glass frit, and an inorganic thixotropic agent.
구체적으로, 상기 도전성 페이스트 조성물은 바인더수지 1 내지 10 중량%, 희석제 5 내지 25 중량%, 도전성 금속 재료 60 내지 90 중량%, 유리 프릿 1 내지 10 중량% 및 무기 요변제 0.1 내지 5 중량%를 포함한다.Specifically, the conductive paste composition includes 1 to 10 wt% of binder resin, 5 to 25 wt% of diluent, 60 to 90 wt% of conductive metal material, 1 to 10 wt% of glass frit and 0.1 to 5 wt% of inorganic thixotropic agent. do.
본 발명의 조성물은 전체 중량을 기준으로 분산제 0.1 내지 5 중량부를 추가로 포함할 수 있다.The composition of the present invention may further comprise 0.1 to 5 parts by weight of the dispersant based on the total weight.
본 발명의 조성물의 구성 성분 중, 상기 바인더수지는 희석제(톨루엔:에탄올=8:2)에 5% 용해되었을 때 점도가 5 내지 500 cps 를 나타내는 셀룰로오스계 화합 물이거나, 분자량이 5,000 내지 50,000인 아크릴수지계 화합물인 것이 바람직하다.Among the components of the composition of the present invention, the binder resin is a cellulose compound having a viscosity of 5 to 500 cps when dissolved in a diluent (toluene: ethanol = 8: 2) at 5%, or an acrylic having a molecular weight of 5,000 to 50,000 It is preferable that it is a resin compound.
그리고, 상기 희석제는 알파-터피네올, 텍사놀, 디옥틸 프탈레이트, 디부틸 프탈레이트, 시클로헥산, 헥산, 톨루엔, 벤질알코올, 디옥산, 디에틸렌글리콜, 에틸렌글리콜모노부틸에테르, 에틸렌글리콜 모노부틸에테르아세테이트, 디에틸렌글리콜모노부틸에테르 및 디에틸렌글리콜모노부틸에테르아세테이트로 이루어진 군으로부터 선택되는 것이 바람직하다.The diluent is alpha-terpineol, texanol, dioctyl phthalate, dibutyl phthalate, cyclohexane, hexane, toluene, benzyl alcohol, dioxane, diethylene glycol, ethylene glycol monobutyl ether, ethylene glycol monobutyl ether It is preferably selected from the group consisting of acetate, diethylene glycol monobutyl ether and diethylene glycol monobutyl ether acetate.
또한, 상기 무기 요변제는 벤토나이트 또는 실리카인 것이 바람직하다.In addition, the inorganic thixotropic agent is preferably bentonite or silica.
그리고, 상기 도전성 금속 재료는 평균 입경이 0.5 내지 5㎛인 은 분말인 것이 바람직하다.And it is preferable that the said electroconductive metal material is silver powder whose average particle diameter is 0.5-5 micrometers.
본 발명의 조성물은 광증감제, 중합금지제, 탈포제, 레벨링제 및 요변제로 이루어진 군으로부터 선택되는 하나 이상의 첨가제를 더 포함할 수도 있다.The composition of the present invention may further comprise at least one additive selected from the group consisting of photosensitizers, polymerization inhibitors, defoamers, leveling agents and thixotropic agents.
본 발명의 두번째 목적에 따라, 본 발명은 상기 도전성 페이스트 조성물을 사용하여 전극을 제조하는 방법을 제공한다. According to a second object of the present invention, the present invention provides a method for producing an electrode using the conductive paste composition.
구체적으로, 상기 방법은 본 발명의 도전성 페이스트 조성물을 기판 상에 인쇄하는 단계, 인쇄된 전극 페이스트를 건조시키는 단계 및 상기 건조된 전극 페이스트를 소성시켜 전극을 형성하는 단계를 포함한다.Specifically, the method includes printing the conductive paste composition of the present invention on a substrate, drying the printed electrode paste, and baking the dried electrode paste to form an electrode.
여기서, 상기 전극은 10 내지 40㎛의 두께를 갖는 것이 바람직하다.Here, the electrode preferably has a thickness of 10 to 40㎛.
그리고, 상기 인쇄된 전극 페이스트는 700 내지 900℃의 온도에서 소성되는 것이 바람직하다.And, the printed electrode paste is preferably baked at a temperature of 700 to 900 ℃.
또한, 상기 도전성 페이스트 조성물은 스크린 프린팅, 그라비어 옵셋 공법, 로터리 스크린 프린팅 공법 또는 리프트 오프법으로 기판 상에 인쇄될 수 있다.In addition, the conductive paste composition may be printed on the substrate by screen printing, gravure offset method, rotary screen printing method or lift off method.
본 발명에 따르는 제조방법에 있어서, 상기 전극은 태양광 전지의 표면전극인 것이 바람직하다.In the production method according to the invention, the electrode is preferably a surface electrode of the solar cell.
본 발명의 세번째 목적에 따라, 본 발명은 상기 전극 제조방법으로 제조된 전극을 표면 전극으로 포함하는 태양광 전지를 제공한다.According to a third object of the present invention, the present invention provides a photovoltaic cell comprising the electrode produced by the electrode manufacturing method as a surface electrode.
본 발명에 따른 전극 페이스트 조성물은 인쇄 후 가열 건조 공정을 진행하여 소성시 막무너짐을 개선시킨다. 따라서 본 발명의 도전성 페이스트에 의하여 형성되는 표면 전극을 태양광 전지셀에 적용한다면 수광 면적이 크고 또한 광전 변환율이 높은 태양광 전지 셀을 얻을 수 있다. The electrode paste composition according to the present invention is subjected to a heat drying process after printing to improve the film collapse during firing. Therefore, if the surface electrode formed by the electrically conductive paste of this invention is applied to a photovoltaic cell, the photovoltaic cell with a large light receiving area and high photoelectric conversion rate can be obtained.
이하에서는 본 발명을 보다 구체적으로 설명한다.Hereinafter, the present invention will be described in more detail.
본 발명에 따른 도전성 페이스트 조성물은 바인더수지, 희석제, 도전성 금속 재료, 유리 프릿 및 무기 요변제를 포함하는 것을 특징으로 한다. 본 발명의 바람직한 실시예에 의하면, 본 발명에 따른 조성물은 바인더수지 1 내지 10 중량 %, 희석제 5 내지 25 중량%, 도전성 금속 재료 60 내지 90 중량%, 유리 프릿 1 내지 10 중량%, 및 무기 요변제 0.1 내지 5 중량% 포함할 수 있다. 또한, 본 발명의 조성물은 전체 중량을 기준으로 분산제 0.1 내지 5 중량부를 추가로 포함할 수 있다.The conductive paste composition according to the present invention is characterized by comprising a binder resin, a diluent, a conductive metal material, a glass frit, and an inorganic thixotropic agent. According to a preferred embodiment of the invention, the composition according to the invention comprises 1 to 10% by weight binder resin, 5 to 25% by weight diluent, 60 to 90% by weight conductive metal material, 1 to 10% by weight glass frit, and inorganic components It may include 0.1 to 5% by weight of the agent. In addition, the composition of the present invention may further comprise 0.1 to 5 parts by weight of the dispersant based on the total weight.
본 발명에 따른 도전성 페이스트 조성물에 있어서, 바인더수지 성분으로는 희석제(톨루엔:에탄올=8:2)에 5 중량% 용해되었을때 점도가 5 내지 500 cps 를 나타내는 셀룰로오스계 화합물이거나, 분자량이 5,000 내지 50,000인 아크릴수지계 화합물인 것이 바람직하다.In the conductive paste composition according to the present invention, the binder resin component is a cellulose-based compound having a viscosity of 5 to 500 cps when dissolved in a diluent (toluene: ethanol = 8: 2) by 5% by weight, or a molecular weight of 5,000 to 50,000 It is preferable that it is an acrylic resin type phosphorus.
구체적으로, 상기 바인더수지는 셀룰로오스아세테이트, 셀룰로오스아세테이트부틸레이트, 에틸셀룰로오스, 메틸셀룰로오스, 하이드록시프로필셀룰로오스, 하이드록시에틸셀룰로오스, 하이드록시프로필메틸셀룰로오스, 하이드록시에틸메틸셀룰로오스 같은 셀룰로오스계 화합물이거나, 폴리아크릴아미드, 폴리메타아크릴레이트, 폴리메틸메타아크릴레이트, 폴리에틸메타아크릴레이트 같은 아크릴계 화합물이거나, 폴리비닐부티랄, 폴리비닐아세테이트, 폴리비닐알코올 같은 비닐계 화합물일 수 있고, 또는 이들의 혼합물일 수 있다.Specifically, the binder resin is a cellulose compound such as cellulose acetate, cellulose acetate butyrate, ethyl cellulose, methyl cellulose, hydroxypropyl cellulose, hydroxyethyl cellulose, hydroxypropyl methyl cellulose, hydroxyethyl methyl cellulose, or polyacryl It may be an acryl-based compound such as amide, polymethacrylate, polymethylmethacrylate, polyethylmethacrylate, or a vinyl compound such as polyvinyl butyral, polyvinylacetate, polyvinyl alcohol, or a mixture thereof. .
본 발명에 따른 조성물에 사용되는 희석제는 알파-터피네올, 텍사놀, 디옥틸프탈레이트, 디부틸프탈레이트, 시클로헥산, 헥산, 톨루엔, 벤질알코올, 디옥산, 디에틸렌글리콜, 에틸렌글리콜모노부틸에테르, 에틸렌글리콜모노부틸에테르아세테이트, 디에틸렌글리콜모노부틸에테르, 디에틸렌글리콜모노부틸에테르아세테이트, 및 이들의 혼합물로 이루어진 군으로부터 선택될 수 있다.Diluents used in the compositions according to the invention are alpha-terpineol, texanol, dioctylphthalate, dibutylphthalate, cyclohexane, hexane, toluene, benzyl alcohol, dioxane, diethylene glycol, ethylene glycol monobutyl ether, Ethylene glycol monobutyl ether acetate, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, and mixtures thereof.
또한 본 발명에 따른 조성물에 사용되는 무기 요변제는 벤토나이트 또는 실리카인 것이 바람직하며, 구체적으로, 데구사(Degussa, 독일)사의 에어로질(Aerosil)인 것이 더욱 바람직하다. 본 발명에 따른 조성물은 0.1 내지 5 중량%의 무기 요변제를 함유함으로써, 소정 전 및 소성 후 종횡비의 변화가 작아 전극제 조시 막 무너짐을 방지할 수 있다. In addition, the inorganic thixotropic agent used in the composition according to the present invention is preferably bentonite or silica, and more specifically, it is more preferable that it is Aerosil of Degussa (Germany). The composition according to the present invention contains 0.1 to 5% by weight of the inorganic thixotropic agent, so that the change in the aspect ratio before and after the predetermined firing is small, thereby preventing the film from collapsing during preparation of the electrode.
본 발명에 따른 도전성 페이스트에 사용되는 도전성 금속 재료로는 은 분말, 구리 분말, 니켈 분말, 알루미늄 분말 등이 사용될 수 있는데, 그 중에서 은 분말이 가장 바람직하다. 이하에서는 편의상 은 분말을 예로 들어 도전성 금속재료에 대해 설명한다. As the conductive metal material used in the conductive paste according to the present invention, silver powder, copper powder, nickel powder, aluminum powder, and the like may be used, among which silver powder is most preferred. For convenience, the conductive metal material will be described using silver powder as an example.
은 분말은 그 형상이 구상(球狀), 침상(針狀), 판상(板狀) 그리고 무정상(無定狀) 중 적어도 1종 이상일 수 있다. 은 분말의 평균입경은 페이스트화 용이성 및 소성시 치밀도를 고려할 때 0.5 ㎛ 내지 5 ㎛인 것이 바람직하다. 그리고, 은 분말의 함량은 인쇄시 형성되는 전극 두께 및 전극의 선저항을 고려할 때 도전성 페이스트 조성물에 60 내지 90 중량%로 함유되는 것이 바람직하다.The silver powder may be at least one or more of spherical, acicular, acicular, and amorphous. The average particle diameter of the silver powder is preferably 0.5 μm to 5 μm in consideration of the ease of pasting and the density during firing. In addition, the content of the silver powder is preferably contained in the conductive paste composition 60 to 90% by weight in consideration of the electrode thickness and the wire resistance of the electrode formed during printing.
또한 본 발명의 조성물에 사용되는 유리 프릿은 평균 입경 0.5 내지 5 ㎛인 것이 바람직하며, 그 성분이 PbO 43 내지 91 중량%, SiO2 21 중량% 이하, B2O3+Bi2O3 25 중량% 이하, Al2O3 7 중량% 이하, ZnO 20 중량% 이하, Na2O+K2O+Li2O 15 중량% 이하, BaO+CaO+MgO+SrO 15 중량% 이하인 유리 분말중 적어도 1종 이상인 것을 사용할 수 있다. 그리고 유리 연화온도가 320℃ 내지 520℃, 열팽창 계수가 62 내지 110 × 10-7/℃ 인 것이 바람직하다. 유리 프릿의 함량은 도전성 페이스트 조성물 총중량을 기준으로 1 내지 10 중량%가 바람직한데, 1 중량% 미만이면 불완전 소성이 이루어져 전기 비저항이 높아질 우려가 있고, 10 중량% 초과하면 은 분말의 소성체 내에 유리 성분이 너무 많아져 전기 비저항이 역시 높아질 우려가 있다.In addition, the glass frit used in the composition of the present invention preferably has an average particle diameter of 0.5 to 5 μm, and the components thereof are 43 to 91 wt% of PbO, 21 wt% or less of SiO 2 , and 25 wt% of B 2 O 3 + Bi 2 O 3. At least 1 in glass powders of less than or equal to 7% by weight of Al 2 O 3 , up to 20% by weight of ZnO, up to 15% by weight of Na 2 O + K 2 O + Li 2 O, and up to 15% by weight of BaO + CaO + MgO + SrO. One or more kinds can be used. And it is preferable that glass softening temperature is 320 degreeC-520 degreeC, and a thermal expansion coefficient is 62-110x10 <-7> / degreeC . The content of the glass frit is preferably 1 to 10% by weight based on the total weight of the conductive paste composition. If the content is less than 1% by weight, incomplete firing may occur to increase the electrical resistivity. There are too many components, and there exists a possibility that an electrical resistivity may also become high.
본 발명에 따른 조성물은 필요에 따라 통상적으로 알려져 있는 첨가제, 예를 들면, 광증감제, 중합금지제, 탈포제, 레벨링제 및 요변제로 이루어진 군으로부터 선택된 하나 이상의 첨가제를 더 포함할 수 있다.The composition according to the invention may further comprise one or more additives selected from the group consisting of additives commonly known as necessary, for example, photosensitizers, polymerization inhibitors, defoamers, leveling agents and thixotropic agents.
본 발명에 따른 도전성 페이스트 조성물은 태양광 전지의 표면 전극 제조에 쓰일 수 있는데, 본 발명에 따른 도전성 페이스트 조성물을 사용하여 전극을 제조하기 위해서는 먼저, 본 발명에 따른 도전성 페이스트 조성물을 기판 상에 직접 인쇄하는 단계, 인쇄된 전극 페이스트를 건조시키는 단계, 및 상기 건조된 전극 페이스트를 소성시켜 전극을 형성하는 단계를 실시한다. The conductive paste composition according to the present invention can be used for the production of surface electrodes of photovoltaic cells. In order to manufacture the electrode using the conductive paste composition according to the present invention, first, the conductive paste composition according to the present invention is directly printed on a substrate. And drying the printed electrode paste and baking the dried electrode paste to form an electrode.
본 발명에 따른 전극은 10 내지 40 ㎛의 두께를 갖는 것이 바람직하다. The electrode according to the invention preferably has a thickness of 10 to 40 μm.
본 발명에 따른 도전성 페이스트 조성물로 인쇄(또는 패터닝이라고도 함)된 전극 페이스트는 150 내지 250℃에서 수분간 건조시키고, 700 내지 900℃의 온도에서 수초간 소성될 수 있다. The electrode paste printed (or also referred to as patterning) with the conductive paste composition according to the present invention may be dried at 150 to 250 ° C. for several minutes and calcined at a temperature of 700 to 900 ° C. for several seconds.
본 발명에 따른 도전성 페이스트 조성물은 스크린 프린팅, 그라비어 옵셋 공법, 로터리 스크린 프린팅 공법 또는 리프트 오프법 등 다양한 인쇄법을 사용하여 기판 상에 인쇄될 수 있다.The conductive paste composition according to the present invention may be printed on a substrate using various printing methods such as screen printing, gravure offset method, rotary screen printing method or lift off method.
상기와 같이 본 발명에 따른 도전성 페이스트 조성물을 이용하여 제조된 전극은 태양광 전지의 표면 전극으로 유용하게 쓰일 수 있다.As described above, the electrode manufactured using the conductive paste composition according to the present invention may be usefully used as a surface electrode of a solar cell.
도 1은 태양광 전지의 구조를 설명하는 개략도이다. 실리콘 기판은 다결정 실리콘 또는 단결정 실리콘일 수 있다. 수광에 따라서 기전력을 만들어 내도록 p-n 접합이 수광면 근처에 형성된다. p-n접합의 형성에는 기판을 p형으로 하고 확산에 의하여 수광면측을 n형으로 하여도 좋고 역으로 기판을 n형으로 하고 수광면측을 p형으로 하여도 좋다. 1 is a schematic view illustrating the structure of a solar cell. The silicon substrate may be polycrystalline silicon or single crystal silicon. A p-n junction is formed near the light-receiving surface to generate an electromotive force upon receiving light. To form the p-n junction, the substrate may be p-type, the light receiving surface side may be n-type by diffusion, or conversely, the substrate may be n-type and the light receiving surface side may be p-type.
태양광 전지 셀의 수광면에는 수광면에 있어서 반사를 방지하고 수광효율을 올리기 위해 화학적 증착법(CVD) 등의 방법에 의해 반사방지층을 설치한다. 반사방지층은 산화티탄, 이산화규소, 질화규소 등으로 형성할 수 있고, 그 중에서도 질화규소가 디바이스로서의 안정성이 우수하기 때문에 바람직하다. 반사방지층은 패시베이션층으로도 사용이 가능하다. 반사 방지층의 두께는 통상 50 내지 100nm정도이다. 실리콘 기판의 이면에 형성된 이면 전극은 알루미늄 등의 도전성 금속재료를 도포하고 건조시켜 제조한다. 본 발명에 따른 도전성 페이스트는 반사방지층의 표면에 형성된 표면 전극에 이용될 수 있다. 표면 전극 패턴을 형성하고 건조 후 표면 전극과 이면 전극을 동시에 소성한다. 표면 전극의 패턴의 형상으로서는 평행선과 격자 등을 예로 들 수 있다. On the light receiving surface of the photovoltaic cell, an antireflection layer is provided by a method such as chemical vapor deposition (CVD) to prevent reflection on the light receiving surface and increase the light receiving efficiency. The antireflection layer can be formed of titanium oxide, silicon dioxide, silicon nitride, or the like, and among them, silicon nitride is preferable because of its excellent stability as a device. The antireflection layer can also be used as a passivation layer. The thickness of an antireflection layer is about 50-100 nm normally. The back electrode formed on the back surface of the silicon substrate is manufactured by coating and drying a conductive metal material such as aluminum. The conductive paste according to the present invention can be used for surface electrodes formed on the surface of the antireflection layer. After forming the surface electrode pattern and drying, the surface electrode and the back electrode are simultaneously fired. Examples of the shape of the pattern of the surface electrode include parallel lines and a lattice.
본 발명의 조성물을 사용하여 제조된 태양광 전지 셀은 그 기능을 향상시키기 위한 추가의 요소를 가질 수 있다. 예를 들면 표면 전극의 표면에 전지 성능의 신뢰성을 향상시키기 위해 용접층을 설치할 수 있다. Photovoltaic cells produced using the compositions of the present invention may have additional elements to enhance their function. For example, a welding layer may be provided on the surface of the surface electrode to improve the reliability of battery performance.
본 발명에 따른 도전성 페이스트로 형성되는 표면 전극은 종횡비(높이/폭) 0.3 이상을 실현할 수 있기 때문에 이 표면 전극을 태양전지 셀에 적용한다면 태양전지 셀에 있어서 수광 면적을 93% 이상으로 높일 수 있다. 또한 본 발명에 따른 도전성 페이스트는 소성하는 경우 선 저항이 저하되기 때문에 수광에 의하여 발생한 기전력을 전류로서 효율적으로 사용할 수 있게 한다. Since the surface electrode formed of the conductive paste according to the present invention can realize an aspect ratio (height / width) of 0.3 or more, if the surface electrode is applied to a solar cell, the light receiving area of the solar cell can be increased to 93% or more. . In addition, the conductive paste according to the present invention can effectively use the electromotive force generated by light reception as a current because the line resistance is lowered when firing.
이하, 하기 실시예에 의하여 본 발명을 더욱 상세하게 설명하고자 한다. 단, 하기 실시예는 본 발명을 예시하기 위한 것일 뿐 본 발명의 범위가 이들만으로 한정되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to the following examples. However, the following examples are only for illustrating the present invention, and the scope of the present invention is not limited thereto.
<제조예 1> 바인더수지 혼합물 1의 제조Preparation Example 1 Preparation of Binder Resin Mixture 1
1L 플라스크에 에틸셀룰로오스(EC, 상품명 Ethocel Std 100, 다우 케미칼사, 미국) 10g을 넣고 혼합 용매로서 텍사놀(Texanol, 이스트만사) 85g과 디옥틸프탈레이트(DOP) 5g을 첨가한 뒤, 85℃에서 1시간 동안 용해시켜 바인더수지와 희석제의 혼합 조성물을 제조하였다. 10 g of ethyl cellulose (EC, trade name Ethocel Std 100, Dow Chemical, USA) was added to a 1 L flask, and 85 g of Texanol (5) and dioctylphthalate (DOP) were added as a mixed solvent. It was dissolved for 1 hour to prepare a mixed composition of a binder resin and a diluent.
<제조예 2> 바인더수지 혼합물 2의 제조Preparation Example 2 Preparation of Binder Resin Mixture 2
1L 플라스크에 에틸셀룰로오스(EC, 상품명 Ethocel Std 45, 다우 케미칼사, 미국) 20g을 넣고 혼합 용매로서 텍사놀(Texanol, 이스트만사) 75g과 디옥틸프탈레이트(DOP) 5g을 첨가한 뒤, 85℃에서 1시간 동안 용해시켜 바인더수지와 희석제의 혼합 조성물을 제조하였다. 20 g of ethyl cellulose (EC, trade name Ethocel Std 45, Dow Chemical, USA) was added to a 1 L flask, and 75 g of Texanol (5%) and dioctylphthalate (DOP) were added as a mixed solvent. It was dissolved for 1 hour to prepare a mixed composition of a binder resin and a diluent.
전도성 페이스트 조성물의 제조Preparation of Conductive Paste Composition
<실시예 1><Example 1>
제조예 1에서 제조된 바인더수지 혼합물 1 15g (바인더수지 1.5g 및 희석제 13.5g), 분산제(BYK 110, BYK 케미(BYK Chemi)사) 1g, 유리 프릿(평균 입경 1미크론) 5g을 넣고 삼본밀을 사용하여 분산하고 난 뒤, 은 분말(구상, 평균 입경 1미크론) 78.5g과 무기 요변제(에어로질-200, 데구사사) 0.5g를 첨가 및 혼합하고 삼본밀을 사용하여 분산하였다. 그 뒤 감압 탈포하여 도전성 페이스트를 제조했다. 이 도전성 페이스트를 325 서스 메쉬 필터를 사용하여 여과한 후 물성을 평가하였다.15 g of the binder resin mixture 1 prepared in Preparation Example 1 (1.5 g of binder resin and 13.5 g of diluent), 1 g of dispersant (BYK 110, BYK Chemi), 5 g of glass frit (average particle diameter: 1 micron) After dispersing using, 78.5 g of silver powder (spherical, average particle diameter: 1 micron) and 0.5 g of inorganic thixotropic agent (airzyl-200, Degussa) were added and mixed, and dispersed using a sambon mill. Thereafter, vacuum degassing was carried out to prepare a conductive paste. The conductive paste was filtered using a 325 sus mesh filter to evaluate physical properties.
<실시예 2><Example 2>
제조예 1에서 제조된 바인더수지 혼합물 1 15g (바인더수지 1.5g 및 희석제 13.5g), 분산제(BYK 110, BYK 케미사) 1g, 유리 프릿(평균 입경 1미크론) 5g을 넣고 삼본밀을 사용하여 분산하고 난 뒤, 은 분말(구상, 평균 입경 1미크론) 78g과 무기 요변제(에어로질-200, 데구사사) 1g을 첨가 및 혼합하고 삼본밀을 사용하여 분산하였다. 그 뒤 감압 탈포하여 도전성 페이스트를 제조했다. 이 도전성 페이스트를 325 서스 메쉬 필터를 사용하여 여과한 후 물성을 평가하였다.15 g of the binder resin mixture 1 prepared in Preparation Example 1 (1.5 g of binder resin and 13.5 g of diluent), 1 g of dispersant (BYK 110, BYK Chemis), and 5 g of glass frit (average particle diameter of 1 micron) were added and dispersed using a three-bone mill. After that, 78 g of silver powder (spherical, average particle diameter: 1 micron) and 1 g of inorganic thixotropic agent (Aerosil-200, Degussa) were added and mixed, and dispersed using a sambon mill. Thereafter, vacuum degassing was carried out to prepare a conductive paste. The conductive paste was filtered using a 325 sus mesh filter to evaluate physical properties.
<실시예 3><Example 3>
제조예 2에서 제조된 바인더수지 혼합물 2 15g (바인더수지 3g 및 희석제 12g), 분산제(BYK 110, BYK 케미사) 1g, 유리 프릿(평균 입경 1미크론) 5g을 넣고 삼본밀을 사용하여 분산하고 난 뒤, 은 분말(구상, 평균 입경 1미크론) 78g과 무기 요변제(에어로질-200, 데구사사) 1g을 첨가 및 혼합하고 삼본밀을 사용하여 분산하였다. 그 뒤 감압 탈포하여 도전성 페이스트를 제조했다. 이 도전성 페이스트를 325 서스 메쉬 필터를 사용하여 여과한 후 물성을 평가하였다.15 g of the binder resin mixture 2 prepared in Preparation Example 2 (3 g of binder resin and 12 g of diluent), 1 g of dispersant (BYK 110, BYK Chemisa), 5 g of glass frit (average particle diameter of 1 micron) were added and dispersed using a three-bone mill. After that, 78 g of silver powder (spherical, 1 micron in average particle diameter) and 1 g of inorganic thixotropic agent (Aerosil-200, Degussa Co.) were added and mixed, and dispersed using a sambon mill. Thereafter, vacuum degassing was carried out to prepare a conductive paste. The conductive paste was filtered using a 325 sus mesh filter to evaluate physical properties.
<실시예 4><Example 4>
제조예 1에서 제조된 바인더수지 혼합물 1 13g (바인더수지 1.3g 및 희석제 11.7g), 분산제(BYK 110, BYK 케미사) 1g, 유리 프릿(평균 입경 1미크론) 5g을 넣고 삼본밀을 사용하여 분산하고 난 뒤, 은 분말(구상, 평균 입경 1미크론) 80g과 무기 요변제(에어로질-200, 데구사사) 1g을 혼합하고 삼본밀을 사용하여 분산하였다. 그 뒤 감압 탈포하여 도전성 페이스트를 제조했다. 이 도전성 페이스트를 325 서스 메쉬 필터를 사용하여 여과한 후 물성을 평가하였다.13 g of the binder resin mixture 1 prepared in Preparation Example 1 (1.3 g of binder resin and 11.7 g of diluent), 1 g of dispersant (BYK 110, BYK Chemisa), 5 g of glass frit (average particle size of 1 micron) were added, and dispersed using a sambon mill. Then, 80 g of silver powder (spherical, 1 micron in average particle diameter) and 1 g of inorganic thixotropic agent (airzyl-200, Degussa Co., Ltd.) were mixed and dispersed using a sambon mill. Thereafter, vacuum degassing was carried out to prepare a conductive paste. The conductive paste was filtered using a 325 sus mesh filter to evaluate physical properties.
<실시예 5>Example 5
제조예 1에서 제조된 바인더수지 혼합물 1 11g (바인더수지 1.1g 및 희석제 9.9g), 분산제(BYK 110, BYK 케미사) 1g, 유리 프릿(평균 입경 1미크론) 5g을 넣고 삼본밀을 사용하여 분산하고 난 뒤, 은 분말(구상, 평균 입경 1미크론) 82g과 무기 요변제(에어로질-200, 데구사사) 1g을 첨가 및 혼합하고 삼본밀을 사용하여 분산하였다. 그 뒤 감압 탈포하여 도전성 페이스트를 제조했다. 이 도전성 페이스트를 325 서스 메쉬 필터를 사용하여 여과한 후 물성을 평가하였다.11 g of the binder resin mixture 1 prepared in Preparation Example 1 (1.1 g of binder resin and 9.9 g of diluent), 1 g of dispersant (BYK 110, BYK Chemisa), 5 g of glass frit (average particle diameter of 1 micron) were added and dispersed using a three-bone mill. After that, 82 g of silver powder (spherical, 1 micron in average particle diameter) and 1 g of inorganic thixotropic agent (Aerosil-200, Degussa Co., Ltd.) were added and mixed, and dispersed using a sambon mill. Thereafter, vacuum degassing was carried out to prepare a conductive paste. The conductive paste was filtered using a 325 sus mesh filter to evaluate physical properties.
<실시예 6><Example 6>
제조예 1에서 제조된 바인더수지 혼합물 1 15g (바인더수지 1.5g 및 희석제 13.5g), 분산제(BYK 110, BYK 케미사) 1g, 유리 프릿(평균 입경 1미크론) 5g을 넣고 삼본밀을 사용하여 분산하고 난 뒤, 은 분말(구상, 평균 입경 1미크론) 38g, 은 분말(플레이크상, 평균 입경 3미크론) 40g과 무기 요변제(에어로질-200, 데구사사) 1g을 첨가 및 혼합하고 삼본밀을 사용하여 분산하였다. 그 뒤 감압 탈포하여 도전성 페이스트를 제조했다. 이 도전성 페이스트를 325 서스 메쉬 필터를 사용하여 여 과한 후 물성을 평가하였다.15 g of the binder resin mixture 1 prepared in Preparation Example 1 (1.5 g of binder resin and 13.5 g of diluent), 1 g of dispersant (BYK 110, BYK Chemis), and 5 g of glass frit (average particle diameter of 1 micron) were added and dispersed using a three-bone mill. 38 g of silver powder (sphere, average particle diameter: 1 micron), 40 g of silver powder (flake shape, average particle diameter of 3 microns) and 1 g of inorganic thixotropic agent (aerosol-200, Degussa) were added and mixed. It was dispersed using. Thereafter, vacuum degassing was carried out to prepare a conductive paste. The conductive paste was filtered using a 325 sus mesh filter to evaluate physical properties.
<실시예 7><Example 7>
제조예 1에서 제조된 바인더수지 혼합물 1 15g (바인더수지 1.5g 및 희석제 13.5g), 분산제(BYK 110, BYK 케미사) 1g, 유리 프릿(평균 입경 1미크론) 5g을 넣고 삼본밀을 사용하여 분산하고 난 뒤, 은 분말(구상, 평균 입경 2미크론) 78g과 무기 요변제(에어로질-200, 데구사사) 1g을 첨가 및 혼합하고 삼본밀을 사용하여 분산하였다. 그 뒤 감압 탈포하여 도전성 페이스트를 제조했다. 이 도전성 페이스트를 325 서스 메쉬 필터를 사용하여 여과한 후 물성을 평가하였다.15 g of the binder resin mixture 1 prepared in Preparation Example 1 (1.5 g of binder resin and 13.5 g of diluent), 1 g of dispersant (BYK 110, BYK Chemis), and 5 g of glass frit (average particle diameter of 1 micron) were added and dispersed using a three-bone mill. After that, 78 g of silver powder (spherical, 2 microns in average particle diameter) and 1 g of inorganic thixotropic agent (airzyl-200, Degussa Co., Ltd.) were added and mixed, and dispersed using a sambon mill. Thereafter, vacuum degassing was carried out to prepare a conductive paste. The conductive paste was filtered using a 325 sus mesh filter to evaluate physical properties.
<비교예 1>Comparative Example 1
제조예 1에서 제조된 바인더수지 혼합물 1 15g (바인더수지 1.5g 및 희석제 13.5g), 분산제(BYK 110, BYK 케미사) 1g, 유리 프릿(평균 입경 1미크론) 5g을 넣고 삼본밀을 사용하여 분산하고 난 뒤, 은 분말(구상, 평균 입경 1미크론) 79g을 첨가 및 혼합하고 삼본밀을 사용하여 분산하였다. 그 뒤 감압 탈포하여 도전성 페이스트를 제조했다. 이 도전성 페이스트를 325 서스 메쉬 필터를 사용하여 여과한 후 물성을 평가하였다.15 g of the binder resin mixture 1 prepared in Preparation Example 1 (1.5 g of binder resin and 13.5 g of diluent), 1 g of dispersant (BYK 110, BYK Chemis), and 5 g of glass frit (average particle diameter of 1 micron) were added and dispersed using a three-bone mill. After that, 79 g of silver powder (spherical, 1 micron in average particle diameter) was added and mixed, and dispersed using a three-bone mill. Thereafter, vacuum degassing was carried out to prepare a conductive paste. The conductive paste was filtered using a 325 sus mesh filter to evaluate physical properties.
<비교예 2>Comparative Example 2
제조예 1에서 제조된 바인더수지 혼합물 1 15g (바인더수지 1.5g 및 희석제 13.5g), 분산제(BYK 110, BYK 케미사) 1g, 유리 프릿(평균 입경 1미크론) 5g을 넣고 삼본밀을 사용하여 분산하고 난 뒤, 은 분말(구상, 평균 입경 1미크론) 39g과 은 분말(플레이크상, 평균 입경 3미크론) 40g을 첨가 및 혼합하고 삼본밀을 사용하 여 분산하였다. 그 뒤 감압 탈포하여 도전성 페이스트를 제조했다. 이 도전성 페이스트를 325 서스 메쉬 필터를 사용하여 여과한 후 물성을 평가하였다.15 g of the binder resin mixture 1 prepared in Preparation Example 1 (1.5 g of binder resin and 13.5 g of diluent), 1 g of dispersant (BYK 110, BYK Chemis), and 5 g of glass frit (average particle diameter of 1 micron) were added and dispersed using a three-bone mill. Then, 39 g of silver powder (spherical, 1 micron in average particle diameter) and 40 g of silver powder (flakes, 3 micron in average particle diameter) were added and mixed, and dispersed using a sambon mill. Thereafter, vacuum degassing was carried out to prepare a conductive paste. The conductive paste was filtered using a 325 sus mesh filter to evaluate physical properties.
<비교예 3>Comparative Example 3
제조예 1에서 제조된 바인더수지 혼합물 1 15g (바인더수지 1.5g 및 희석제 13.5g), 분산제(BYK 110, BYK 케미사) 1g, 유리 프릿(평균 입경 1미크론) 5g을 넣고 삼본밀을 사용하여 분산하고 난 뒤, 은 분말(구상, 평균 입경 1미크론) 78g과 유기 요변제(BYK 410, BYK 케미사) 1g을 첨가 및 혼합하고 삼본밀을 사용하여 분산하였다. 그 뒤 감압 탈포하여 도전성 페이스트를 제조했다. 이 도전성 페이스트를 325 서스 메쉬 필터를 사용하여 여과한 후 물성을 평가하였다.15 g of the binder resin mixture 1 prepared in Preparation Example 1 (1.5 g of binder resin and 13.5 g of diluent), 1 g of dispersant (BYK 110, BYK Chemis), and 5 g of glass frit (average particle diameter of 1 micron) were added and dispersed using a three-bone mill. After that, 78 g of silver powder (spherical, 1 micron in average particle diameter) and 1 g of organic thixotropic agent (BYK 410, BYK Chemisa) were added and mixed, and dispersed using a sambon mill. Thereafter, vacuum degassing was carried out to prepare a conductive paste. The conductive paste was filtered using a 325 sus mesh filter to evaluate physical properties.
물성 평가Property evaluation
실시예 1 내지 7 및 비교예 1 내지 3에서 얻은 도전성 페이스트의 물성 평가는 아래와 같은 방법에 의하여 행하여졌으며, 그 결과를 아래 표 1에 나타내었다. The physical property evaluation of the electrically conductive paste obtained in Examples 1-7 and Comparative Examples 1-3 was performed by the following method, and the result is shown in Table 1 below.
(1) 점도 및 칙소 지수(T.I., thixo index)(1) viscosity and thixo index (T.I., thixo index)
점도의 측정은 비스코미터(Hakke사, RV1)와 Ti 35 스핀들을 사용하여 전단속도(shear rate) 10 s-1에서 측정했다. 칙소 지수는 마찬가지로 전단속도 1s-1과 10s-1에 점도를 각각 측정하였고, 점도비는 (1s-1으로 측정한 점도/10s-1으로 측정한 점도)으로 표현했다. The viscosity was measured at a shear rate of 10 s −1 using a bismeter (Hakke, RV1) and a Ti 35 spindle. The thixotropic index was similarly measured at the shear rates 1s -1 and 10s -1 , respectively, and the viscosity ratio was expressed as (viscosity measured at 1s -1 / 10s -1 ).
(2) 종횡비(2) aspect ratio
325 메쉬 제판을 사용하여 폭 100㎛ 인쇄성을 확인하였다. 스크린 프린터를 사용하여 스퀴즈 속도 40cm/min으로 인쇄하였다. 인쇄 후 150℃에서 건조하였다. 그 뒤 소성로(시에라썸사)에 최고 도달점 750℃로 소성하고 인쇄 형상을 관찰하고 종횡비(A/R) 를 구했다. 소성시 막무너짐의 정도는 소성 전 및 소성 후 종횡비의 변화를 비교해 봄으로써 알 수 있다. Printability of 100 micrometers in width was confirmed using the 325 mesh plate making. A screen printer was used to print at a squeeze speed of 40 cm / min. It dried at 150 degreeC after printing. Then, it baked at the maximum arrival point of 750 degreeC in the kiln (Sierra Sum Company), observed the printing shape, and calculated | required aspect ratio (A / R). The degree of film collapse during firing can be determined by comparing the change in aspect ratio before and after firing.
(3) 저항 측정(3) resistance measurement
폭 100㎛의 선폭과 두께를 측정하고 멀티미터(Fluke사)를 사용하여 저항을 측정한 뒤, 비저항(=저항×선폭×두께/ 길이)을 계산하였다. The line width and thickness of 100 micrometers in width were measured, and resistance was measured using the multimeter (Fluke), and specific resistance (= resistance x line width x thickness / length) was calculated.
표 1의 결과를 보면, 본 발명에 따른 실시예 1 내지 7의 도전성 페이스트는 소성 전 및 소성 후 종횡비를 비교해 볼 때 그 변화가 작으므로, 막무너짐이 감소하였으나, 비교예의 조성물은 그 변화가 커 막무너짐이 심한 것을 알 수 있다 In the results of Table 1, the conductive pastes of Examples 1 to 7 according to the present invention had a small change when comparing the aspect ratio before and after firing, but the film collapse was reduced, but the composition of the comparative example had a large change. It can be seen that the collapse is severe
또한 실시예 1 내지 7를 비교해 보면, 무기 요변제 양이 증가할수록 종횡비가 높아짐을 알 수 있고 이는 소성시 막무너짐의 방지효과가 우수해짐을 의미한다. 또한 은 분말 함량이 높아질수록 저항이 개선되고 종횡비도 증가됨을 알 수 있다. In addition, comparing Examples 1 to 7, it can be seen that the aspect ratio increases as the amount of inorganic thixotropic agent increases, which means that the effect of preventing film collapse during firing is excellent. It can also be seen that the higher the silver powder content, the better the resistance and the higher the aspect ratio.
특히, 실시예 5의 도전성 화합물에서는 소성 전 종횡비(0.313)뿐만 아니라 소성 후 종횡비(0.284)까지 개선하는 것에 성공했다. 종횡비가 개선됨으로써 수광 면적이 늘어나고 선저항이 감소될 수 있었다. In particular, the conductive compound of Example 5 succeeded in improving not only the aspect ratio before baking (0.313) but also the aspect ratio after baking (0.284). By improving the aspect ratio, the light receiving area can be increased and the line resistance can be reduced.
도 1은 일반적인 태양광 전지의 구조를 설명하는 개략도이다.1 is a schematic view illustrating the structure of a general photovoltaic cell.
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| JPH0766690B2 (en) * | 1986-10-13 | 1995-07-19 | 株式会社村田製作所 | Conductive paste |
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| WO2009157727A3 (en) | 2010-04-15 |
| WO2009157727A2 (en) | 2009-12-30 |
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