KR20090045536A - Organic light emitting diode - Google Patents

Abstract

The present invention relates to an organic electroluminescent device.

The present invention provides an organic light emitting display device comprising: a light emitting layer disposed between an anode electrode and a cathode electrode, wherein electrons and holes disappear in pairs in the light emitting layer to emit light; And a driving device connected to the pixels and supplying a driving signal, wherein the first wiring part connected to the data electrode is formed at different intervals from the second wiring part connected to the source / drain electrode. An organic electroluminescent device is provided.

Therefore, according to the present invention, in the pad portion connecting the light emitting region of the organic light emitting diode and the tape carrier package (TCP), the width of the wiring connecting the TCP and the light emitting portion is controlled to reduce the volume of the entire organic light emitting diode. In this case, alignment of the wirings and the FPC can be easily aligned, and a short circuit due to static electricity can be prevented when the relative voltage difference is large, such as the Vdd terminal and the Vss terminal.

Organic light emitting diode, non-emitting region, dummy wiring

Description

Organic electroluminescence device

The present invention relates to an organic light emitting device, and more particularly, to a wiring line of a pad portion of an organic light emitting device.

With the advent of the multimedia era, display devices that can express more detailed, larger, and more natural colors are required. However, the current CRT (Cathode Ray Tube) has a limit to constitute a large screen of 40 inches or more, and the organic electroluminescence device (LCD), liquid crystal display (LCD), plasma display panel (PDP) and projection TV ( Television) is rapidly developing to expand its use in the field of high-definition video.

An organic electroluminescent device is a device that emits light when electrons and holes are paired and then disappear when electrons are injected into an organic film formed between a cathode and an anode. Therefore, the organic light emitting display device can form a device on a transparent substrate that can be bent, such as plastic. In addition, it is possible to drive at a lower voltage (about 10V or less) than a plasma display panel or an inorganic light emitting device. In addition, the organic light emitting diode has a relatively low power consumption and excellent color, attracting attention as a next-generation display. In addition, in order to drive at a low voltage, the total thickness of the organic film is very thin and uniform, such as 100 to 200 nanometers, and it is important to maintain the stability of the device.

The organic light emitting display device is an active matrix (Passive matrix type organic light emitting device and a thin film transistor (TFT) which is driven by a switch control of an electric signal according to a method of driving a subpixel). Active matrix) is divided into organic light emitting device.

The conventional active matrix organic light emitting display device will be described below.

In a conventional active matrix organic light emitting display device, a thin film transistor, an interlayer insulating layer, and a gate insulating layer are formed on a transparent substrate. The thin film transistor includes a source electrode, a drain electrode, an active layer, and a gate electrode. The thin film transistor contacts the source electrode and the drain through contact holes formed in the interlayer insulating layer and the gate insulating layer.

The planarization film is formed of an organic material on the gate insulating layer and the metal electrode. In addition, an anode electrode is formed on the planarization layer to be electrically connected to the metal electrode. In addition, an insulating layer is formed on a location including a portion where the thin film transistor unit is provided and a part of the end of the anode electrode. An organic light emitting layer is formed on the insulating layer, and a cathode electrode is formed on the organic light emitting layer. In this case, the organic light emitting layer includes a hole transporting layer, a red, green and blue light emitting layer, and an electron transporting layer.

Here, the hole transport layer is composed of a hole injection layer and a hole transport layer, the electron transport layer is composed of an electron transport layer and an electron injection layer.

However, the above-described conventional organic electroluminescent device has the following problems.

The above-described light emitting region of the organic light emitting diode is connected to a tape carrier package (TCP) for driving the organic light emitting diode through a pad part or the like. The wiring connecting the TCP to the light emitting part in the pad part requires a large number as the number of pixels increases, which causes the volume of the entire organic light emitting diode to increase.

In addition, if the above-mentioned wirings and the FPC are not aligned, or if the relative voltage difference is large, such as Vdd and Vss, short circuits may occur due to static electricity.

An object of the present invention is to reduce the volume of the entire organic light emitting device by adjusting the width of the wiring connecting the TCP and the light emitting unit in the pad portion connecting the light emitting region and the TCP (Tape carrier package) of the organic light emitting device. It is.

Another object of the present invention is to facilitate alignment in the bonding of the wirings and the FPCB.

Still another object of the present invention is to prevent a short circuit due to static electricity when the relative voltage difference is large, such as the Vdd stage and the Vss stage.

In order to solve the above problems, the present invention provides a light emitting layer provided between the anode electrode and the cathode electrode, and in the organic light emitting device for emitting light by pairing and disappearing electrons and holes in the light emitting layer, to display an image signal A plurality of pixels; And a driving device connected to the pixels and supplying a driving signal, wherein the first wiring part connected to the data electrode is formed at different intervals from the second wiring part connected to the source / drain electrode. An organic electroluminescent device is provided.

According to another embodiment of the present invention, the method comprises: laminating an anode, a light emitting layer, and a cathode in a light emitting region on a substrate; Forming a first wiring part connected to a data electrode in a non-light emitting area on the substrate; And forming a second wiring portion connected to a source / drain electrode in the non-light emitting region and spaced apart from the first wiring portion, wherein the organic light emitting diode is manufactured.

Referring to the effects of the organic light emitting display device and a method of manufacturing the same according to the present invention.

First, in the pad portion connecting the light emitting region of the organic light emitting diode and the tape carrier package (TCP), the volume of the entire organic light emitting diode can be reduced by adjusting the width of the wiring connecting the TCP and the light emitting portion.

Second, alignment in wirings and FPCBs in the organic light emitting diode can be facilitated.

Other objects, features and advantages of the present invention will become apparent from the following detailed description of embodiments with reference to the accompanying drawings.

Hereinafter, preferred embodiments of the present invention, in which the above object can be specifically realized, are described with reference to the accompanying drawings.

In the accompanying drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. On the other hand, when a part such as a layer, film, region, plate, etc. is formed or positioned on another part, it is formed directly on the other part and not only in direct contact but also when another part exists in the middle thereof. It should also be understood to include.

1 is a plan view of a pad portion of an embodiment of an organic light emitting display device according to the present invention. Hereinafter, an embodiment of an organic light emitting display device according to the present invention will be described with reference to FIG. 1.

In FIG. 1, the pad part includes a first wiring part 110 and a second wiring part 120. Here, the first wiring part 110 and the second wiring part 120 are connected to the active area 140 and the drive IC 130 provided with a plurality of pixels. In the present embodiment, the second wiring part 120 is provided with a pair at the left and right sides of the first wiring part 110. The first wiring unit 110 is connected to the data electrode of the organic light emitting diode to supply driving data. The second wiring part 120 is connected to the source / drain electrodes of the organic light emitting diode. In this case, the first wiring part 110 and the second wiring part 120 are each composed of a plurality of wirings as shown.

Here, the widths of the respective wires constituting the first wire part 110 are different from the widths of the respective wires constituting the second wire part 120. Here, "different" is characterized in that the difference in design rather than an error in manufacturing technology. Specifically, the widths of the respective wirings forming the first wiring unit 110 are smaller than the widths of the respective wirings forming the second wiring unit 120. Here, the widths of the respective wires forming the first wiring unit 110 are 120 to 180 micrometers, and the widths of the respective wirings forming the second wiring unit 120 are 160 to 240 micrometers.

Here, if the widths of the respective wires are too narrow, there is a risk that the wires are disconnected when a large amount of current flows. If the widths of the individual wires are too wide, the capacity of the pad portion is increased too much. The reason why the widths of the wirings are different may be greater than that of the first wiring unit 110. Therefore, the width of the wiring can be widened in the case of the V _dd stage to which a relatively large voltage is applied as compared to the data signal.

At least one of the first wiring part 110 and the second wiring part 120 may include at least one dummy wire. Here, the dummy wiring is formed for alignment due to bonding with the FPC and for shorting due to static electricity when the relative voltage difference is large, such as the Vdd terminal and the Vss terminal.

In addition, the respective wirings forming the first wiring part 110 and the second wiring part 120 are spaced apart from each other by a predetermined distance. Here, the predetermined distance is a distance of 1 to 1.5 times the width of each wiring. That is, each of the wirings forming the second wiring unit 120 is spaced apart from each other more than each of the wirings forming the first wiring unit 110. The above-mentioned separation distance is a value considering the prevention of short circuit and the capacity of the pad part.

The wirings forming the first wiring unit 110 may include Nd (neodymium), Ta (tantanium), Nb (niobium), Mo (molybdenum), W (tungsten), Ti (titanium), and Si (silicon). ), B (boron), Ni (nickel), and Al (aluminum).

In addition, the wirings forming the second wiring unit 120 may have a three-layer structure. Here, the three-layer structure refers to a structure provided with a protective layer and a surface active layer on both sides of the conductive layer for transmitting the electrical signal. Here, the conductive layer may be made of Al (aluminum) or the like as the first wiring unit 110. In addition, the protective layer may be made of Ti (titanium) or tungsten (W), and the surface active layer may be made of titanium (Ti) or molybdenum (Mo). At this time, both the protective layer and the surface active layer can prevent the conductive layer from being damaged from X-rays or the like in the deposition process of the organic light emitting device. In addition, the surfactant may increase the interfacial adhesion of the source electrode. In addition, the protective layer and the surface active layer may be replaced with another material, but it is natural that the material for improving the X-ray blocking and interfacial adhesion.

An insulating film may be provided on the upper and lower portions of the first wiring part 110 and the second wiring part 120. Here, when an insulating film is formed under the first wiring part 110 and the second wiring part 120, deformation of the wiring parts can be prevented even in a high temperature or high humidity state. In addition, an organic or inorganic insulating film is formed on the first wiring part 110 and the second wiring part 120 to protect the wiring part from moisture or the like.

Next, the configuration of the active area will be described with reference to FIG. 2. In the case of an active matrix type top-emitting organic light emitting diode, the active region may include a plurality of thin film transistors 210, an interlayer insulating layer 220, and a gate insulating layer 230 on the transparent substrate 100. Formed. Here, the transparent substrate 100 may be made of glass, quartz or sapphire. In addition, an interlayer insulating layer 220 may be formed between the transparent substrate 100 and the thin film transistor 210 to prevent various impurities in the substrate from penetrating into the silicon film.

The thin film transistor 210 includes a source region 211, a drain region 212, a channel region 213, a gate electrode 214, and first and second metal electrodes 215 and 216. Here, the first and second metal electrodes 215 and 216 contact the source region 211 and the drain region 212 of the thin film transistor 210 through the interlayer insulating layer 220 and the gate insulating layer 230. Characterized in that formed.

The planarization layer 240 is formed on the entire surface of the transparent substrate 100 including the thin film transistor 210 to planarize the pixel region. Here, the planarization layer 230 may be made of an organic insulating material such as an acryl-based organic compound, polyimide, BCB (Benzo Cyclo Butene) or PFCB, or may be made of an inorganic insulating material such as silicon nitride. have.

Here, an anode electrode 250 connected to any one of the first and second metal electrodes 215 and 216 is formed on the planarization layer 240 through the contact hole. Here, the anode 250 is made of a transparent conductive film that transmits light, such as indium-tin-oxide (ITO), indium-zinc-oxide (IZO), or the like. The insulating layer 258 is provided at a position corresponding to the position where the thin film transistor 210 is provided. Here, the insulating film 258 is formed to cover a portion of the end of the anode electrode 250 as shown in FIG.

Here, the portion of the insulating layer 258 covering one end of the anode electrode 250 is characterized in that 3 to 10% of the width of the anode electrode 250. That is, even if the insulating film 258 covers the anode electrode 250, the aperture ratio of the anode electrode 250 is 80 to 95%. In detail, the size of the anode electrode 250 and the overlap width of the insulating layer 258 may vary according to the pixel size of the organic light emitting diode. For example, assuming that the size of one anode electrode 250 is 100 micrometers, the insulating layer 258 covers the end of the anode electrode by 3 to 10 micrometers. In addition, the insulating layer 260 may be made of an inorganic insulating material such as silicon nitride film Sin _x or silicon oxide film SiO ₂ .

If the width of the insulating layer 258 covering the anode electrode 250 is larger than the above-mentioned value, the aperture ratio of the organic light emitting diode may be excessively lowered. In addition, when the width of the insulating film 258 covering the anode electrode is narrower than the numerical value described above, there is a difficulty in the manufacturing process as described later.

The organic emission layer and the cathode electrode 290 are sequentially formed on the insulating layer 258 and the anode electrode 250. The organic light emitting layer may include a hole injection layer 260, a hole transfer layer 165, an emission layer 270, an electron transfer layer 280, and an electron injection layer. , 285) are laminated in order. On the organic light emitting layer, an electrode for back emission is stacked on the cathode electrode 290 of the organic light emitting diode.

Here, an electron transporting layer 280 is provided between the light emitting layer 270 and the cathode electrode 290, so that most of the electrons injected from the cathode electrode 290 into the light emitting layer 270 are recombined with the holes. Will be moved towards (250). In addition, a hole transporting layer 280 is provided between the anode electrode 250 and the light emitting layer 270, and electrons injected into the light emitting layer 270 are blocked at an interface with the hole transporting layer 280 and no longer have an anode electrode ( The recombination efficiency may be improved because the light emitting layer 270 does not move toward 250 and exists only in the light emitting layer 270.

Hereinafter, a method of manufacturing an embodiment of a method of manufacturing an organic light emitting display device according to the present invention will be described.

First, the manufacturing process of a light emitting area is demonstrated. A transparent substrate made of glass, quartz, sapphire, or the like is prepared. As shown, an interlayer insulating layer and a channel region having a predetermined thickness are formed on the transparent substrate. Here, the channel region is formed by a low pressure chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (CVD), the amorphous silicon film is formed to a thickness of about 200 ~ 800 angstroms . The channel region is crystallized from polycrystalline silicon by a method such as laser annealing.

Next, the polycrystalline silicon active layer is patterned by a method such as a photolithography process to form a channel region in the thin film transistor region in the unit pixel. In addition, in order to prevent various impurities in the transparent substrate from penetrating into the silicon film during the crystallization of the amorphous silicon film, which will be described later, an interlayer insulating layer may be formed. Impurity ion implantation is then performed using the photomask used in the patterning process of the gate film described above to form source and drain regions of the thin film transistor, which will be described later, on both surfaces of the channel region.

Then, laser annealing or furnace annealing is performed to activate the doped regions of the source and drain regions and to recover damage to the silicon layer.

Subsequently, silicon oxide is deposited on the interlayer insulating layer and the channel region to form a gate insulating layer. Here, the silicon oxide is deposited by a method such as plasma chemical vapor deposition, the gate insulating layer may be deposited to a thickness of about 1000 ~ 2000 Angstroms. Then, a gate electrode is formed on the gate insulating layer. Here, the gate electrode may be formed by sputtering aluminum-neodymium (AlNd) or the like to deposit a thickness of about 1500 to 5000 angstroms, and then patterning the same by photolithography. Subsequently, contact holes exposing portions of the source and drain regions may be formed, and may be performed by a photolithography process or the like.

In addition, after depositing molybdenum (MoW) or aluminium-neodymium to a thickness of 3000 ~ 6000 angstroms to form a conductive layer, the conductive layer is patterned by a photolithography process to contact the source and drain regions, respectively Source and drain electrodes are formed. The source electrode and the drain electrode may be deposited by sputtering or may be formed by electron beam deposition. And conductive materials, such as Al (aluminum), are laminated | stacked and formed in thickness of 200-500 nanometers.

Next, a planarization film is formed on the gate insulating layer including the thin film transistor. Here, the planarization film is for planarization of the anode electrode, and is formed by depositing an organic or inorganic insulating material to a thickness of about 1000 to 5000 angstroms. The planarization layer is etched by a photolithography process to form a contact hole exposing one of the source and drain electrodes. In addition, a transparent conductive film such as ITO or IZO is deposited on the planarization layer and the contact hole, and then patterned by photolithography to form an anode electrode connected to the drain electrode through the contact hole. Here, the anode electrode uses a transparent conductive material such as ITO.

An insulating material made of a silicon nitride film or a silicon oxide film is deposited on the entire upper surface of the resultant to a thickness of about 1000 to 2000 angstroms. The insulating material is patterned to form an insulating film. The patterning process of the insulating material consists of selective exposure and development. That is, as shown in the figure, a mask is placed on the insulating material, and the exposed insulating material is selectively exposed and then developed, leaving only the portions exposed to ultraviolet rays or the like.

Here, a mask for selective exposure should be provided to cover both ends of the anode electrode. If the anode electrode has a line width of 100 micrometers, the mask should be positioned to cover both ends of the anode electrode by 3 to 10 micrometers each. When the mask covers both ends of the anode electrode at 3 micrometers or less, the insulating film may be patterned so as not to cover the anode electrode due to an error in an exposure process.

The insulating film formed after the selective exposure process and the development process through the mask described above covers both ends of the anode electrode by 3 to 10% of the width of the anode electrode. That is, the aperture ratio of the anode electrode is 80 to 95%. The size of the specific anode electrode and the overlap width of the insulating layer will be different depending on the pixel size of the organic light emitting diode. For example, assuming that the size of one anode electrode is 100 micrometers, the insulating film covers the end of the anode electrode by 3 to 10 micrometers.

The organic light emitting layer is formed by sequentially laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer on a region including the opening. Subsequently, the cathode of the organic light emitting diode having a predetermined thickness is formed on the entire upper surface of the resultant.

Here, the hole injection layer is formed by depositing copper phthalocyanine (CuPC) to a thickness of 10 to 30 nanometers. And, the hole transport layer is 4,4'-qltm [N- (1-naphthyl) -N-phenylamino] biphenyl (4,4'-bis [N- (1-naphthyl) -N-phenthylamino] -biphenyl (NPB) is formed by depositing a thickness of 30 to 60 nanometers, and the light emitting layer is formed by using an organic light emitting material according to red, green, and blue pixels, and adding dopants as necessary.

Next, the manufacturing process of a non-light emitting area is demonstrated.

The first wiring part and the second wiring part are formed to be connected to the active area and the drive IC including the plurality of pixels. In this case, the second wiring part may be formed in a pair on the left and right sides of the first wiring part. The first wiring part is formed to be connected to the data electrode of the organic light emitting diode. The second wiring portion is formed to be connected to the source / drain electrodes of the organic light emitting diode. At this time, the first wiring portion and the second wiring portion are each composed of a plurality of wirings.

Each of the wirings forming the first wiring portion is formed such that its width is different from the width of each of the wirings forming the second wiring portion. Specifically, the width of each of the wirings forming the first wiring portion is formed to be the width of each of the wirings forming the second wiring portion. Here, the width of each of the wirings forming the first wiring portion is formed to 120 to 180 micrometers, the width of each of the wirings forming the second wiring portion is formed to 160 to 240 micrometers.

As described above, the reason why the widths of the wirings are different may be greater than that of the first wiring portion. Therefore, in the case of the V _dd stage to which a large voltage is applied, the width of the wiring is widened.

At least one of the first wiring part and / or the second wiring part is not connected to the electrode to form a dummy wiring. Here, the dummy wiring is formed for alignment due to bonding with the FPC and for shorting due to static electricity when the relative voltage difference is large, such as the Vdd terminal and the Vss terminal.

Each of the wires forming the first wire part and the second wire part is spaced at a distance of 1 to 1.5 times the width of each wire. Therefore, each of the wirings forming the second wiring portion is spaced apart from each other more than the respective wirings of the first wiring portion.

The wirings forming the first wiring portion may include Nd (neodymium), Ta (titanium), Nb (niobium), Mo (molybdenum), W (tungsten), Ti (titanium), Si (silicon), and B ( Boron), Ni (nickel), and Al (aluminum).

In addition, the wirings forming the second wiring portion may be formed in a three-layer structure, and the detailed structure is as described above.

In addition, an insulating film may be formed on the upper and lower portions of the first wiring portion and the second wiring portion. Here, when an insulating film is formed under the first wiring part and the second wiring part, deformation of the wiring parts can be prevented even in a high temperature or high humidity state. In addition, an organic or inorganic insulating film may be formed on the first wiring part and the second wiring part to protect the wiring part from moisture or the like.

In the method of manufacturing the organic light emitting device according to the present invention described above, the insulating film may block ultraviolet rays and the like in the deposition process of the light emitting layer and the cathode, thereby preventing performance degradation of the thin film transistor.

The present invention is not limited to the above-described embodiments, and such modifications are included in the scope of the present invention even if modifications are possible by those skilled in the art to which the present invention pertains.

According to the present invention, an organic light emitting display device and a method of manufacturing the same may reduce the volume of the entire organic light emitting display device by adjusting the width of the wiring in the pad part, and align the bonding between the wirings and the FPCB. In this case, when the relative voltage difference is large, such as the Vdd stage and the Vss stage, the short circuit caused by static electricity can be prevented.

1 is a plan view of a pad portion of an embodiment of an organic light emitting display device according to the present invention;

2 is a view showing the configuration of an active region of an embodiment of an organic light emitting display device according to the present invention.

<Explanation of symbols for the main parts of the drawings>

100: transparent substrate 110: first wiring portion

120: second wiring portion 130: drive IC

140: light emitting region 210: thin film transistor

211 source region 212 drain region

213: channel region 214: gate electrode

215: first metal electrode 216: second metal electrode

220: interlayer insulating layer 230: gate insulating layer

240 planarization film 250 anode electrode

253: insulating material 256: mask

258: insulating film 260: hole injection layer

265 hole transport layer 270 light emitting layer

280: electron transport layer 285: electron transport layer

290: cathode electrode

Claims (10)

In the organic light emitting device is provided with a light emitting layer between the anode electrode and the cathode electrode, the electrons and holes in the light emitting layer is extinguished in pairs to emit light, A plurality of pixels for displaying an image signal; And And a driving device connected to the pixels and supplying a driving signal. The first wiring part connected to the data electrode is formed at a distance from the second wiring part connected to the source / drain electrode. According to claim 1, wherein each of the wirings forming the second wiring portion, An organic light emitting display device, characterized in that the width of each of the wirings forming the first wiring portion is different from each other. The method of claim 1, wherein the second wiring portion, An organic light emitting device, characterized in that provided on both sides of the first wiring portion. The method of claim 1, wherein the first wiring portion and / or second wiring portion, An organic light emitting display device comprising at least one dummy wire. According to claim 1, wherein the respective wirings of the first wiring portion, An organic light emitting display device, characterized in that the width is 120 ~ 180 micrometers. According to claim 1, wherein the respective wirings of the second wiring portion, An organic light emitting display device, characterized in that the width is 160 ~ 240 micrometers. The method of claim 1, Respective wires of the first wiring unit and / or the second wiring unit are The organic light emitting device, characterized in that spaced apart by a distance of 1 to 1.5 times the width of each of the wiring. The wiring line of claim 1, wherein the wirings forming the first wiring portion include: Nd (neodynium), Ta (titanium), Nb (niobium), Mo (molybdenum), W (tungsten), Ti (titanium), Si (silicon), B (boron), Ni (nickel), and Al ( An organic electroluminescent device comprising a material selected from the group consisting of aluminum. The method of claim 1, Each of the wirings forming the second wiring portion has a three-layer structure. The organic light emitting device of claim 3, wherein the conductive layer includes Al. The method of claim 1, And an insulating film provided on at least one side of the first wiring part and / or the second wiring part.

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