KR20080093705A - Thin film deposition apparatus and manufacturing method of thin film transistor using same - Google Patents

Abstract

The present invention relates to a thin film deposition apparatus for depositing a thin film including a polysilicon film without undergoing a separate crystallization process using a cluster including an ICP and CCP deposition equipment, and a method of manufacturing a thin film transistor using the same. Transfer chamber for; An ICP process chamber connected to the transfer chamber and configured to form a polycrystalline silicon film having a fine crystal structure; And a second process chamber connected to the transfer chamber and having a CCP method for forming an amorphous silicon film on the polysilicon film layer.

Description

Thin film deposition apparatus and method for manufacturing thin film transistor using same {Apparatus for depositing thin film and Method for making thin film transistor using the same}

1 is a block diagram of an ICP plasma generator according to the prior art

2 is an antenna configuration diagram of an ICP plasma generator according to the prior art

3 is a block diagram of a plasma generating apparatus of the CCP method according to the prior art

4 is a schematic diagram of a cluster according to the present invention;

5 is a block diagram of an ICP plasma generator according to the present invention

6 is a cross-sectional view of a thin film transistor formed using a cluster according to the present invention.

* Description of the symbols for the main parts of the drawings *

191: cluster 193: load lock chamber

194 to 197: process chamber 200: substrate

201: silicon nitride film 202: gate electrode

203: polysilicon film 204: amorphous silicon film

205 impurity amorphous silicon film

The present invention relates to a thin film deposition apparatus and a method of manufacturing a thin film transistor using the same, and more specifically, a thin film for depositing polysilicon (polysilicon) without a separate crystallization process using a cluster including the ICP and CCP deposition equipment A deposition apparatus and method are disclosed.

In general, a plasma generator using plasma as an energy source includes a plasma enhanced chemical vapor deposition (PECVD) device for thin film deposition, a reactive ion etching (RIE) device for etching a deposited thin film, and a sputter ), Ashing devices, and the like. Such a plasma generator can be classified into a capacitive coupled plasma (CCP) device and an inductive coupled plasma (ICP) device according to an application method of RF power. RF is applied to generate a plasma using an RF electric field formed vertically between electrodes, and the latter is a method of converting a raw material into a plasma by using an induction electric field induced by an RF antenna.

1 is a block diagram of an ICP plasma generator according to the prior art. Referring to FIG. 1, the ICP-type plasma generator 10 includes a chamber 11 defining a sealed reaction region, and a susceptor positioned inside the chamber 11 and placing a substrate S on the upper surface thereof. (12), a shower head 13 for injecting the raw material from the upper part of the susceptor 12, and a gas inlet pipe 14 for introducing the raw material into the shower head (13). An RF antenna 15 for supplying RF power to convert the raw material into plasma is positioned above the chamber lid 11a, and an RF power source 17 is connected to the RF antenna 15. The matching circuit 16 located between the RF antenna 15 and the RF power source 17 may adjust the impedance of the RF power source and the reaction space of the RF power source antenna 15 and the chamber to apply the maximum power to the RF antenna 15. The covering serves to match the load impedance.

When the RF power source 17 is applied to the RF antenna 15, a vertical time-varying magnetic field is generated, and an electric field caused by a time-varying magnetic field is induced inside the chamber 11, and electrons accelerated by the induced electric field collide with the neutral gas. As a result, highly reactive active species are generated and converted into a plasma state, which is a mixture gas of electrons and active species, and the active species enter the substrate S to perform processes such as deposition and etching. In order to control the incident energy of the active species incident on the substrate S, a bias power source (not shown) separate from the RF power source 17 may be applied to the susceptor 12. In addition, a heater (not shown) is built in the susceptor 12 to preheat the substrate, and the exhaust port 18 below the chamber 11 serves to exhaust process residual gas through a vacuum pump.

2 is an antenna configuration diagram of an ICP plasma generator according to the prior art. Referring to FIG. 2, the RF antenna 15 will be described in more detail. A plurality of antenna coils 15a, 15b, and 15c may be combined, and each of the plurality of antenna coils 15a, 15b, and 15c may be a chamber lead. It is located on top of 11a and is connected to the RF power source 17 via the matching circuit 16 by an RF cable 19. Therefore, when the RF power source 17 is applied, a time-varying magnetic field is formed in each of the plurality of antenna coils 15a, 15b, and 15c, and an electric field is induced around the time-varying magnetic field. According to the connection method of the antenna coil may be divided into a serial connection antenna and a parallel connection antenna. The connection form or installation position of the antenna may vary depending on the characteristics of each plasma apparatus.

3 is a block diagram of a plasma generating apparatus of the CCP method according to the prior art. Referring to FIG. 3, a schematic configuration of a Plasma Enhanced Chemical Vapor Deposition (PECVD) apparatus 20 for generating a plasma and depositing a predetermined material on a substrate may include a substrate S inside a chamber 21 forming a reaction space. ) Is provided, the substrate support 22 is installed, the upper portion of the substrate support 22 is provided with a gas distribution unit 23 made of aluminum having a plurality of injection holes 24, the chamber 21 The exhaust port 31 is formed in the lower portion. The upper portion of the chamber 21 is sealed by a plasma electrode 25 made of aluminum, the plasma electrode 25 is connected to the RF power source 29, the impedance between the plasma electrode 25 and the RF power source 29 A matching circuit 30 for matching is installed.

The gas distribution unit 23 is mounted or fixed to the connection support 36 of the plasma electrode 25 with the buffer space 26 therebetween. When the RF power source 29 is applied to the plasma electrode 25, the gas distribution part 33 mounted on the connection support 36 of the plasma electrode 25 serves as an electrode facing the lower substrate support 22. Done. The gas supply pipe 27 is connected to the buffer space 26 in the center of the plasma electrode 25, the buffer space 26 is the raw material introduced through the gas supply pipe 27 of the gas distribution unit 23 By pre-diffusion in the upper portion serves to uniformly spray the raw material into the chamber (21). In the buffer space 26, a baffle 28 may be installed in front of the outlet of the gas supply pipe 27 to assist the diffusion of raw materials.

The above-mentioned PECP plasma apparatuses of the ICP and CCP methods are used to deposit the polysilicon required in the thin film transistor of the liquid crystal display. High temperature processing is essential for the deposition of polysilicon, but the glass used as the substrate of the liquid crystal display has a lower melting point than the crystallization temperature of silicon and thus cannot be processed at high temperature. Therefore, there is a problem of depositing amorphous silicon at a low temperature of 450 ° C. or lower, and performing a separate process of crystallizing the thin film of amorphous silicon into polycrystalline silicon using a method such as laser annealing as a later step.

As the need for low temperature polysilicon (LTPS) increases, in the CCP and ICP type PECVD, the high temperature process cannot be performed due to the characteristics of the glass used as the substrate of the liquid crystal display device. The amorphous silicon layer is deposited at a low temperature and then subjected to a separate process of crystallization using a method such as laser annealing.

Recently, a method of depositing a polysilicon film using an ICP type PECVD apparatus having a high plasma density has been considered. By using an ICP method with a high plasma density, a polycrystalline silicon film having a fine crystal structure can be formed. As a result, post-processing such as laser annealing performed after the deposition of the amorphous silicon film may be omitted, or processing time of the post-process may be shortened. However, such an ICP method has a problem in that a deposition rate is lower than that of the CCP method and a uniform thin film is not easily formed. In addition, as the substrate of the liquid crystal display device increases in size, it is difficult for an ICP type PECVD device to form a uniform plasma.

Disclosure of Invention The present invention has been made to solve the above problems, and an object of the present invention is to provide a thin film deposition apparatus and method for depositing a polysilicon film while successively passing each apparatus by connecting a plasma apparatus of a CCP method and an ICP method. do.

An object of the present invention is to provide a thin film deposition apparatus and method for depositing a polysilicon film by dividing a polycrystalline silicon film for manufacturing a thin film transistor into a thin film using a CCP plasma and a thin film using an ICP plasma. It is done.

Disclosure of Invention The present invention has been made in view of the above-described problem, and an object of the present invention is to provide a thin film deposition apparatus and method for depositing a thin film including a polysilicon film without undergoing a separate crystallization process by using a cluster including an ICP and CCP plasma apparatus. do.

Another object of the present invention is to provide a thin film deposition apparatus and method for realizing a silicon nitride film, a polysilicon film, and an impurity amorphous silicon film required in a thin film transistor in one cluster including ICP and CCP deposition equipment.

In order to achieve the above object, the thin film deposition apparatus according to the present invention, the transfer chamber for moving the substrate; An ICP process chamber connected to the transfer chamber and configured to form a polycrystalline silicon film having a fine crystal structure; And a second process chamber connected to the transfer chamber and having a CCP method for forming an amorphous silicon film on the polysilicon film.

In the above thin film deposition apparatus, the third process chamber is connected to the transfer chamber, the CCP method for forming the silicon nitride film on the substrate, and the CCP method for forming the impurity polysilicon film on the amorphous silicon film And a fourth process chamber.

In the thin film deposition apparatus as described above, the first process chamber comprises: a chamber defining a reaction region; An RF power source located outside the chamber; A toroid having an opening in which the first portion is exposed in the chamber, the second portion being exposed to the outside of the chamber, and coupled to the chamber; An induction coil electrically connected to the RF power source and wound around the second portion of the toroid; And a matching circuit for matching an impedance between the RF power supply and the induction coil.

In the thin film deposition apparatus as described above, a susceptor for placing the substrate in the chamber, the central axis of the opening portion of the toroid is characterized in that the horizontal with the susceptor.

In order to achieve the above object, a method of manufacturing a thin film transistor according to the present invention comprises the steps of preparing a substrate; Forming a gate electrode on the substrate; Forming a polycrystalline silicon film having a fine crystal structure on the substrate including the gate electrode in an ICP first process chamber; Forming an amorphous silicon film on the polysilicon film in a second process chamber of a CCP method; And forming a source electrode and a drain electrode on the amorphous silicon film corresponding to both sides of the gate electrode.

In the method of manufacturing a thin film transistor as described above, the polysilicon film is deposited at 100 to 500 mW, and the deposition rate is 100 to 200 mW / mim.

In the above method of manufacturing a thin film transistor, the polysilicon film is SiH ₄ and H ₂ 35 and 350 SCCM, the pressure is 10 mTorr, RF power is characterized in that the deposition under the conditions of 4100 watt.

In the method of manufacturing a thin film transistor as described above, the amorphous silicon film is deposited to a thickness of 1000 to 1500 kHz, the deposition rate is characterized in that 500 to 1000 Å / mim.

In the method of manufacturing the thin film transistor as described above, the amorphous silicon film is SiH ₄ and H ₂ is characterized in that deposited under the conditions of 4500 and 15750 SCCM, pressure 1.6 Torr, RF power 1300 to 4500 watt, respectively.

In the method of manufacturing a thin film transistor as described above, the step of forming a silicon nitride film between the substrate and the polysilicon film in the third process chamber of the CCP method, and the amorphous silicon film in the fourth process chamber of the CCP method Forming an impurity amorphous silicon on the phase.

In the method of manufacturing a thin film transistor as described above, the silicon nitride film supplies SiH ₄ , NH ₃ , and N ₂ to 1000, 4000, and 16000 SCCM, respectively, and the pressure and the RF power are 1.5 Torr and 5000 watt, respectively. It is characterized in that it is formed to a thickness of 2000 to 4000 kPa.

In the method of manufacturing a thin film transistor as described above, the impurity amorphous silicon is SiH ₄ , PH ₃ , and H ₂ to provide the conditions of 2000, 3000 and 8000 SCCM, pressure 1.6 Torr and RF power 4500 watt, respectively. It is characterized by depositing at a thickness of 1000 to 1500 kPa.

In the method of manufacturing the thin film transistor as described above, the deposition rate of the impurity amorphous silicon is characterized in that 500 to 1000 mi / mim.

In the method of manufacturing a thin film transistor as described above, a protective layer is formed on the substrate including the source electrode and the drain electrode.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

4 is a schematic diagram of a cluster according to an embodiment of the present invention. Referring to FIG. 4, the cluster 191 includes a transfer chamber 192 that provides a space for transferring a substrate. The transfer chamber 192 is provided with a robot (not shown) which is a device for transferring a substrate. In addition, the load chamber 192 is connected to the transfer chamber 192, and loads the substrate from the outside, and the load lock chamber 193 for carrying out the process is completed. In addition, at least one CCP type PECVD apparatus and at least one ICP type PECVD apparatus connected to the transfer chamber 192 are included. Referring to FIG. 4, a CCP PECVD apparatus is a first process chamber 194 and a third process chamber 196, and an ICP plasma apparatus is a second process chamber 195. The connection between the CCP type PECVD and the ICP type PECVD can add additional devices as required.

According to an embodiment of the present invention, the first process chamber 194, which is a PEP apparatus of a CCP method, performs a process of forming a silicon nitride film on a substrate. The unprocessed substrate drawn out of the cluster 191 through the load lock chamber 193 is transferred to the first process chamber 194 by the robot of the transfer chamber 192. The first process chamber 194 forms a silicon nitride film on the substrate using a plasma of a CCP method.

The second process chamber 195, which is an ICP type PECVD apparatus, deposits a polysilicon film on a substrate on which a silicon nitride film is formed. The deposition of the polysilicon film in the second process chamber 195 is performed at a lower pressure than the deposition of the silicon nitride film in the first process chamber 195. The pressure of the second process chamber 195 is kept lower than the pressure of the other chambers constituting the cluster 191, but the pressure is increased to load or unload the substrate between the transfer chamber 192. Can be. The substrate on which the silicon nitride film is deposited in the first process chamber 194 is transferred to the second process chamber by the robot. The second process chamber 195 forms a high density plasma, thereby depositing a polysilicon film at a low temperature.

The third process chamber 196, which is a CCP type PECVD apparatus, deposits amorphous silicon on a polysilicon thin film. The substrate on which the polysilicon film is deposited is transferred from the second process chamber 195 to the third process chamber 196 by the robot of the transfer chamber 192. In the third process chamber, the amorphous silicon film is deposited by the CCP plasma at a pressure higher than the pressure for depositing the polysilicon film of the second process chamber.

When an amorphous silicon thin film having an appropriate thickness is deposited, an amorphous silicon film doped with impurities may be continuously formed in the third process chamber 196. If necessary, after the deposition of the amorphous silicon thin film in the third process chamber 196, an amorphous silicon film doped with impurities may be formed on the amorphous silicon thin film in the fourth process chamber 197, which is a CCP PECVD apparatus. have.

According to the present invention, a polycrystalline silicon film having a fine crystal structure at low temperature is deposited in an ICP PECVD apparatus using a toroidal antenna. Form. At this time, the ICP type PECVD apparatus for forming a polysilicon film layer should have a plasma density of about 2 × 10 ¹¹ / cm ³ or more and an electron energy of about 4eV or more. The higher the electron energy and the lower the process pressure, the better the film quality of the polysilicon film. Therefore, plasma should be effectively ignited and maintained even at a process pressure of several tens of mTorr or less.

5 is a block diagram of an ICP plasma generator according to the present invention. Referring to FIG. 5, the plasma generating apparatus is described in detail using the toroidal antenna of the ICP method according to the present invention. The plasma generating apparatus 100 includes a chamber 110 defining a sealed reaction region. And a susceptor 120 for placing the substrate S in the chamber 110, and an exhaust port 114 for discharging residual gas at the bottom of the chamber 110.

The toroidal antenna 130 is vertically coupled to the chamber lead 110a, and the toroidal opening 130a which is a part of the toroid 132 constituting the core is coupled to protrude into the chamber 110, and the toe The induction coil 134 wound on the Lloyd is located above the chamber lid 110a that is outside of the chamber 110. Here, the toroidal antenna 130 is not necessarily coupled to the chamber lead 110a, but may be coupled to the sidewall and the bottom of the chamber 110, and the number of couplings is not limited. The induction coil 134 of the toroidal antenna 130 is connected to the RF power supply 140 for supplying RF power, and the load impedance and the source impedance match between the RF power supply 140 and the induction coil 134. The matching circuit 150 is located. RF power is supplied to the toroidal antenna 130 through one RF power supply 140 and one matching circuit 150, but a separate RF power supply and a matching circuit are provided to each of the toroidal antennas 130. You can also connect. In the present invention, the RF power supply 140 supplies RF power in the range of 10. kHz to 13.56 MHz.

Since the toroid 132 of the toroidal antenna 130 provides a path through which the magnetic field generated by the RF current flowing through the induction coil 134 is wound around, ferrite or iron powder, which is mainly a ferromagnetic material. It is preferably made of (iron powder) material. In order to increase the energy transfer efficiency from the induced electric field generated by the toroid to increase the plasma density, at least a part of the toroid opening 130a should be located inside the chamber 110. When the toroid 132 protruding into the chamber 110 is directly exposed to plasma, the toroid 132 is a source of particles, and thus the toroid 132 is wrapped using the cover 131. The cover 131 may be manufactured using ceramic, aluminum, or SUS, and may be manufactured by joining a non-conductor such as ceramic in a direction that prevents eddy current to prevent eddy current from being induced in the metal. . The cover 131 is coupled to the chamber lid 110a while covering the toroid 132, and an O-ring 112 is installed between the cover 131 and the chamber lid 110a for vacuum sealing. By utilizing a space between the inner wall of the cover 131 and the toroid 132 by a predetermined distance, the space between them can be effectively used to cool the heat generated in the toroid. Therefore, a coolant inlet 136 and a coolant outlet 137 are formed in a portion of the cover 131 located above the chamber lid 110a, and the coolant inlet pipe 138 and the coolant are connected to an external cooling system. Connect the outlet pipe (139). Since the upper space of the chamber lid 110a is an atmospheric pressure environment, it is the simplest to use air as the refrigerant, but is not particularly limited.

The coolant inlet pipe 138 and the coolant outlet pipe 139 are connected to the D-shaped straight line of the toroidal antenna 130, and a power supply line 135 connected to the induction coil 134 therein penetrates. The cover 131 should also serve to isolate the interior space of the chamber 110 in a vacuum state and the interior of the atmospheric pressure state, so that the vacuum seal itself. And a feedback control unit 160 that detects the plasma state inside the chamber 110 and controls the RF power supply 140 or the matching circuit 150. The feedback control unit 160 is a part of a control computer operated by a driver. It may be configured or may be configured separately. Information about the plasma state inside the chamber 110 is detected by the plasma inspection unit 180. The detection method includes an electrostatic probe method using a probe rod 182 and an optical diagnosis method through a viewer port. The detected plasma parameter information is used as data for controlling the intensity or phase of the RF power supplied to the toroidal antenna 130 and the direction of the toroidal antenna 130 from the feedback controller 160. In order to precisely control the RF power, the power supply line 135 between the toroidal antenna 130 and the matching circuit 150 is provided with a V-I meter 170 that checks the voltage and current of the RF power.

6 is a cross-sectional view of a thin film transistor formed using a cluster according to the present invention. In the cluster 191 of FIG. 4, the silicon nitride film 201, the polysilicon film 203, the amorphous silicon film 204, and the impurity amorphous silicon film 205 necessary for the thin film transistor include ICP and CCP deposition equipment. One cluster 191 can be implemented. The substrate 200 in which the thin film transistor is formed in the cluster 191 is based on the fourth generation LCD substrate, and the size of the fourth generation LCD substrate is 730 * 920 mm. The size of the substrate is not limited thereto, and when a larger substrate is to be processed, the size of the cluster may increase according to the size of the substrate.

The silicon nitride film 201 is deposited on the substrate 200 using a first process chamber 194 having a CCP method as a buffer layer. The silicon nitride film 201 supplies SiH ₄ , NH ₃ , and N ₂ to the first process chamber 194 and is formed to a thickness of 2000 to 4000 Pa at a pressure in the range of several mTorr. The thickness of the silicon nitride film 201 can be adjusted as necessary, and the RF power per unit area is 7.44 mW / mm ² . The flow rate and the RF power of the gas supplied to the first process chamber 194 may be appropriately selected as necessary.

The silicon nitride film 201 is formed by selecting one of aluminum, aluminum alloy, molybdenum, chromium, copper, and copper alloy, or forming and patterning a first metal layer having a double layer structure in which molybdenum is laminated on the aluminum alloy. Thus, the gate electrode 202 can be formed. In this case, the gate electrode 202 may be formed in a process chamber installed in the cluster 191, or may be processed in an external process chamber.

A polycrystalline silicon film 203 having a fine crystal structure is formed on the silicon nitride film 201 including the gate electrode 202. The bottom gate thin film transistor shown in FIG. 6 uses the cluster 191 of FIG. 4 to minimize defects at the interface between the silicon nitride film 201 and the polysilicon film 203. Thus, after the silicon nitride film 201 is formed, the polysilicon film 203 is deposited without breaking the vacuum.

The polysilicon film 203 is formed in the second process chamber 194 of the ICP method. SiH ₄ and H ₂ in the deposition step, the pressure of 1 to 20 mTorr, RF power of 3 to 8 mW / cm ² conditions, polycrystalline silicon film 203 of fine crystal structure to a thickness of 100 to 500 kPa Deposit. At this time, the substrate is heated in the range of 300 ° C to 400 ° C. The deposition rate of the polysilicon film 203 is 100 to 200 mW / mim. The flow rate of the gas used in the deposition step or the applied RF power may be appropriately selected as necessary.

In the second process chamber 194, the substrate 200 on which the polysilicon film 203 is formed is moved to the third process chamber 196 by a robot, and the amorphous silicon film 204 is disposed on the polysilicon film 203. Deposit. The amorphous silicon film 204 is formed in the third process chamber 196 of the CCP method, and SiH ₄ and H ₂ have a pressure of 1.6 Torr and RF power of 1000 to 1500 mW under the conditions of 1.5 to 8 mW / cm ² . Deposit to thickness. The deposition rate of the amorphous silicon film 204 is about 500 to 1000 mW / mim.

The substrate 200 on which the amorphous silicon film 204 is formed in the third process chamber 196 is moved to the fourth process chamber 197 by a robot, and the impurity amorphous silicon film 205 is formed on the amorphous silicon film 204. E). The impurity amorphous silicon film 205 used as the ohmic contact layer of the thin film transistor is formed in the fourth process chamber 197 of the CCP method, and SiH ₄ , PH ₃ , and H ₂ are provided under a condition of 1.6 Torr. To a thickness of 1500 kPa. The RF power per unit area of the impurity amorphous silicon film 205 is 6.7 mW / mm ² . Here, the impurity amorphous silicon film 205 may be continuously deposited on the amorphous silicon layer 204 in the third process chamber 196.

The second metal layer is formed on the impurity amorphous silicon film 205, and the source metal 206 and the drain electrode 207 are removed by removing the second metal film and the impurity amorphous silicon layer 205 corresponding to the gate electrode 202. And a protective layer 208 on the substrate 200 including the source electrode 206 and the drain electrode 207 to complete the thin film transistor.

The polysilicon film 203 and the amorphous silicon film 204 used as the channel region of the thin film transistor are important parts for determining the switching speed, and the switching speed is the electron movement of the polysilicon film 203 and the amorphous silicon film 204. As determined by the figure, if possible, an initial thickness of 100 to 500 mm 3 should be formed of the silicon layer of the crystalline structure. In order to form the polycrystalline silicon film 203 having a fine crystal structure, the second process chamber 195 of the ICP method should have a plasma density of about 2 × 10 ¹¹ / cm ³ or more and an electron energy of about 4 eV or more. The higher the electron energy and the lower the process pressure, the better the film quality of the polysilicon film. Therefore, plasma should be effectively ignited and maintained even at a process pressure of 20 mTorr or less.

The CCP method has a deposition rate of about 5 times higher than that of the ICP method. Accordingly, the polysilicon film 203 has a low deposition rate but provides a high quality film having a crystal structure, whereas the amorphous silicon layer 204 has a high deposition rate, thereby ensuring mass productivity. In addition, ICP and CCP deposition equipment capable of depositing the silicon nitride film 201, the polysilicon film 203, the amorphous silicon layer 204 and the impurity amorphous silicon layer 205 in one cluster 191, Production efficiency is increased.

The thin film deposition apparatus and method according to the present invention has the following effects.

Using a cluster including the ICP and CCP deposition equipment by depositing a polysilicon film without undergoing a separate crystallization process, it is possible to secure the productivity and uniformity of the thin film. In addition, the silicon nitride film, polysilicon film, and impurity amorphous silicon layer required for the thin film transistor can be implemented in one cluster including the ICP and CCP deposition equipment without vacuum breakdown, thereby improving the characteristics of the thin film transistor.

Claims (16)

A transfer chamber for moving the substrate; A first process chamber connected to the transfer chamber and having a CCP method for forming a silicon nitride film; A second process chamber connected to the transfer chamber and configured to form a polysilicon film on the silicon nitride film; A third process chamber connected to the transfer chamber and configured to form an amorphous silicon layer on a polysilicon film; Thin film deposition apparatus comprising a. The method of claim 1, And a fourth process chamber connected to the transfer chamber and configured to form an impurity amorphous silicon layer on the amorphous silicon layer. The method of claim 1, And in the third process chamber, an impurity amorphous silicon layer is formed on the amorphous silicon layer. The method of claim 1, And the first process chamber for forming the silicon nitride film and the third process chamber for forming the amorphous silicon layer are the same chamber. The method of claim 1, The second process chamber, A chamber defining a reaction zone; An RF power source located outside the chamber; A toroid having an opening in which the first portion is exposed in the chamber, the second portion being exposed to the outside of the chamber, and coupled to the chamber; An induction coil electrically connected to the RF power source and wound around the second portion of the toroid; A matching circuit for matching an impedance between the RF power supply and the induction coil; Thin film deposition apparatus comprising a. The method of claim 5, wherein And a susceptor for placing the substrate inside the chamber, wherein the central axis of the opening portion of the toroid is parallel to the susceptor. Preparing a substrate; Forming a silicon nitride film on the substrate in a first process chamber of a CCP method; Forming a gate electrode on the silicon nitride film; Forming a polycrystalline silicon film having a fine crystal structure on the silicon nitride film including the gate electrode in an ICP-type second process chamber; Forming an amorphous silicon layer on the polysilicon film in a third process chamber of a CCP method; Forming a source electrode and a drain electrode on the amorphous silicon layer corresponding to both sides of the gate electrode; Method of manufacturing a thin film transistor comprising a The method of claim 7, wherein The polysilicon film is deposited at 100 to 500 mW, and the deposition rate is 100 to 200 mW / mim. The method of claim 7, wherein The polysilicon film is a method of manufacturing a thin film transistor, characterized in that the deposition of SH ₄ and H ₂ in a pressure of 1 to 20 mTorr, RF power of 3 to 8 mW / cm2. The method of claim 7, wherein The amorphous silicon layer is deposited to a thickness of 1000 to 1500 kHz, the deposition rate is a manufacturing method of a thin film transistor, characterized in that 500 to 1000 Å / mim. The method of claim 10, The amorphous silicon layer is a method of manufacturing a thin film transistor, characterized in that the deposition of SH ₄ and H ₂ under a pressure of 1.6 Torr, RF power 1.5 to 8 8 mW / cm2. The method of claim 7, wherein In the third process chamber of the CCP method, a method of manufacturing a thin film transistor comprising the step of forming an impurity amorphous silicon layer on the amorphous silicon layer. The method of claim 7, wherein The silicon nitride film is SH ₄ , NH ₃ , and N ₂ to form a thin film transistor, characterized in that the pressure and RF power is formed in a thickness of 2000 to 4000 kPa under the conditions of 1.5 Torr and 7.44mW / mm ² respectively. The method of claim 12, The impurity amorphous silicon film of SH ₄ , PH ₃ , and H ₂ to provide a pressure of 1.6 Torr, RF power of 6.7 mW / mm ² 4500 conditions to deposit a thickness of 1000 to 1500 kHz of the thin film transistor, characterized in that Manufacturing method. The method of claim 7, wherein The polysilicon film is a method of manufacturing a thin film transistor, characterized in that formed at a temperature selected from 300 ℃ to 400 ℃ The method of claim 5, wherein A method of manufacturing a thin film transistor, characterized in that to form a protective layer on the substrate including the source electrode and the drain electrode.

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