KR20050023215A - Method of producing components and ultra high vacuum cvd reactor - Google Patents

Abstract

In order to industrially process the component in the CVD process while maintaining ultra-high vacuum residual gas conditions, the component is fed from the vacuum chamber 13 to the CVD reactor 1 in the form of a batch, which vacuum chamber is described above. The reactor 1 is connected with the process chamber 17 installed at the front end. This process chamber 17 may be a lock chamber, another vacuum transfer chamber, a coating chamber, a cleaning chamber, an etching chamber, a heating chamber, a buffer chamber or an injection chamber.

Description

METHOD OF PRODUCING COMPONENTS AND ULTRA HIGH VACUUM CVD REACTOR}

The present invention relates to the manufacture of a semiconductor component or an intermediate product therefor, or to the manufacture of a component which, in general, has the same high requirements as in the manufacture of a semiconductor component, in particular a process unit.

A "component" is understood here as a commercially tradeable object made in a usable form. For example, such a component may be a semiconductor chip.

In the manufacturing process, the "parts" are processed, which are finally processed into the above-mentioned "components". For example, a wafer "component" is processed into one or more components after its processing. For example, by processing a wafer, which is a component, one or more components, that is, semiconductor chips, are processed.

The aforementioned components may also be photoelectric, optical or micro mechanical components or intermediates thereof.

Physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods are competing with each other in the deposition of a thin film related to the aforementioned manufacturing method.

The present invention relates to a problem that occurs when depositing a thin film by applying the CVD method.

Known CVD thin film deposition methods are distinguished according to the residual gas partial pressure (UHV) and process pressures (APCVD, LPCVD) that occur before or during the reaction gas, i. The division is as follows.

Atmospheric Pressure CVD (APCVD): The process pressure P _P is approximately equal to the atmospheric pressure.

Low Pressure CVD (LPCVD): The process pressure P _P is adjusted in the range of 0.1 mbar to 100 mbar.

Ultra-high Vacuum CVD (UHV-CVD): Residual gas partial pressures up to 10 ⁻⁸ mbar and typical process pressures range from 10 ⁻¹ to 10 ⁻⁵ mbar.

In certain areas, particularly in silicon germanium techniques, the UHV-CVD and LPCVD methods compete with each other in the manufacture of components / intermediates that meet the quality requirements for semiconductor manufacturing.

For example, U.S. Pat. No. 5,181,964 describes the UHV-CVD method, in which disc-shaped components each positioned vertically and horizontally aligned with each other in a batch are introduced into the UHV-CVD reactor. It is charged and coated here in a horizontal "loaded" state. UHV-CVD reactors are also known from US 5 607 511 and well known UHV-CVD processes are known from US 5 298 452 and US 5 906 680. In addition, B.S. was published in November 1990. Meyerson, IBM J. Res. Develop., Vol. See 34, No.6.

In addition, reference may be made to Applicants' following data regarding batch processing of components.

US-A-6 177 129

US-A-5 515 986

US-A-5 693 238

This process is not a process to which plasma technology is applied unless otherwise specified in the present invention with reference to the CVD process.

For example, the UHV-CVD process using the reactor specified in US Pat. No. 5,181,964 is a batch process in which a plurality of parts are processed simultaneously in a CVD process, whereas in the LPCVD process only one component is introduced into the CVD process. In these two methods, only a relatively low coating rate appears due to low processing temperatures (parts protected), so that systems in which only one part is processed simultaneously in a CVD process enable CVD processing by batch. It is disadvantageous in terms of flow rate compared to the UHV-CVD method. However, in the LPCVD method, the processing of each part allows for automatic handling to or from the CVD process or LPCVD reactor in vacuum, or to another process or treatment station located at the front or rear end. It enables automatic handling from the process or processing station.

In the UHV-CVD process, the batch of components in the manufacturing process is transferred to or from the UHV-CVD reactor in a clean space atmosphere, or from or to the processing process located at the front or the rear end.

The two competing methods described above with regard to industrial manufacturing, where flow rate is a significant factor under conditions where quality requirements are met, do not meet optimal conditions.

In the following, the present invention will be described in detail with reference to the drawings. The drawings are as follows.

1 shows schematically the principle of operation of a vacuum treatment plant according to the invention operating in accordance with the method according to the invention in which a first aspect of the invention is considered;

FIG. 2 is a view corresponding to FIG. 1, showing a UHV-CVD reactor according to the present invention operating in accordance with the method according to the present invention in which a second aspect of the present invention is considered;

3 shows a preferred embodiment of a vacuum treatment plant operating according to the method according to the invention with a UHV-CVD reactor of the invention according to FIG.

4 is a longitudinal sectional view of a preferred embodiment of a UHV-CVD reactor according to the present invention for carrying out the method according to the present invention;

FIG. 5 is a schematic partial cross-sectional view of a UHV-CVD reactor according to the invention with a control circuit and heating element for controlling temperature variables in a reactor reaction chamber, corresponding to FIG.

6 is a schematic partial cross-sectional view of a component support introduced into a UHV-CVD reactor in accordance with the present invention where temperature control and temperature measurements are made directly on the component itself,

Figure 7 shows a schematic plan view of a vacuum treatment plant according to the invention which operates according to the method according to the invention and which is formed as a cluster plant and is preferably equipped with at least one UHV-CVD reactor according to the invention.

It is therefore an object of the present invention to propose a method of manufacturing a component or intermediate thereof which, in particular with respect to a processor unit, meets the above mentioned quality requirements which are applied in the manufacture of semiconductor components, which significantly overcomes the above mentioned disadvantages.

This object is achieved in a first aspect through a method of manufacturing a component or an intermediate product, in which the component used for manufacturing is a component.

a) entered into the treatment process and then

b) a plurality of components are simultaneously introduced into the CVD process under ultra-high vacuum conditions,

The above-described treatment process is likewise a vacuum process in which components are put into the CVD process in a vacuum state.

In order to achieve the stated object, the present invention starts from the competitive method described above, i.e., the UHV-CVD method in which parts are put into the CVD process under ultra-high vacuum conditions as a batch. However, the process of processing a component at the front end of the CVD process is realized as a vacuum process, in which the component is put into the CVD process in a vacuum state.

This maintains the advantages of the UHV-CVD process, including the batch process, and the advantages that can be easily realized due to the individual part treatment, known only in the LPCVD method, that is, forming the process before the coating process described above as a vacuum process and also The transfer from the previous treatment process to the thin film deposition process has the effect of performing under vacuum conditions.

In addition, even when strict guidelines are followed, no dangerous steps are required for moving parts before the UHV-CVD process, which is carried out in an ambient atmosphere of the purity chamber which cannot be achieved to the desired degree.

However, the above-mentioned object is achieved in the second aspect of the present invention through a method of manufacturing a component or an intermediate product, in which a plurality of parts are simultaneously introduced into a CVD process under ultra-high vacuum conditions, and the parts are disc-shaped. It is placed in a very high vacuum CVD process in a horizontally aligned state.

Also in this second aspect, it is based on the UHV-CVD method among the two mutually competitive methods described above for achieving the aforementioned object. In addition, in the well-known UHV-CVD method involving part batch processing, it is in principle disadvantageous to vertically align disc-shaped parts within a batch with respect to handling at the front and / or back ends, and for the purpose proposed, It is already known to act as a significant obstacle.

The above object is therefore already achieved by putting it in the aforementioned CVD process under ultra-high vacuum conditions with the part horizontally aligned in the UHV-CVD batch treatment of the part under the assumption that the part is disc shaped.

In a preferred embodiment of the method according to the first aspect of the invention this method is combined with the method according to the second aspect. In addition, the processing process previously carried out is a vacuum process, in which the components are transferred to the CVD process under ultra-high vacuum conditions in a vacuum state, and in the CVD process as well as the above-described processing process in a state where the disk-shaped parts are aligned horizontally. Another preferred method is introduced which is fed and transferred from the processing process to the CVD process in this horizontal alignment.

In general, in the manufacture of components of the aforementioned type, it is necessary to carry out the cleaning process of the part immediately before the CVD coating deposition process. In the known UHV-CVD method, the coating must be coated in a CVD process by applying a cleaning method comprising a plurality of processing steps, which is terminated through the treatment of the component in diluted hydrofluoric acid, commonly referred to as HF-dipping. At the surface, contaminants and naturally growing oxides are removed. After the final step of this cleaning method, the part is introduced into the CVD process chamber in the shortest possible time, thereby preventing the deposition of new contaminants on the part to be coated due to the clean room atmosphere during transport. In a preferred embodiment of the method according to the invention this part is in vacuum between the CVD process and the cleaning process carried out before the CVD process.

However, in the method according to the present invention in consideration of the latter aspect, since the transport of the components to the CVD process is carried out in a vacuum state, the process process just before the CVD process does not necessarily need to be a cleaning process when it is not released from the vacuum state, For example, a buffering process or a heat treatment process may be located between the cleaning process and the UHV-CVD process.

In another preferred embodiment of the method according to the invention, taking into consideration both sides, it is proposed that, in the case of discoid components, these components are simultaneously placed in the CVD process in a horizontally positioned and vertically stacked condition. This forms an arrangement of disk-shaped parts that are positioned horizontally and stacked vertically.

Although it is possible to insert parts into a processing step prior to the CVD process using batches and to transport these parts to the CVD process by batch, the parts are loaded via individual transport and released through individual transport for the CVD process. It is desirable to.

This ensures that individual conveying methods continue to be applied in the handling and handling of parts and nevertheless realize the advantage that batch processing can be fully utilized in thin film deposition.

Since the wafers for the manufacture of semiconductor components now have dimensions of 200 mm x 200 mm or diameters of 200 mm and therefore batch transport is very complex, the above-described method has significant advantages.

However, in the vacuum treatment facility proposed according to the invention, including the embodiment according to the invention described above and the embodiment described later and the proposed CVD reactor according to the invention or such a reactor, the dimensions are 200 mm × 200 mm or more. It is also possible to machine disc-shaped components with corresponding diameters, in particular wafers or components having dimensions of at least 300 mm × 300 mm and at least 300 mm in diameter. However, the larger the parts, the more advantageous the individual transport of the parts than the batch transport. In this proposed preferred method, there is no limitation with regard to the increase in wafer dimensions.

In another preferred method of the process according to the invention the parts are subjected to two or more treatment processes. This process involves a CVD process under ultra-high vacuum conditions, in which parts are continuously transported from one process to another along linear and / or circular transport tracks.

As such, CVD processes with ultra-high vacuum conditions are now included in the multi-process manufacturing process, ie the original cluster process, as process stations. Typically, parts are transported from one process station to another and processed therein in a vacuum free central delivery room or in a pre-set order. In addition to the above-mentioned UHV-CVD process, the processes carried out herein include, for example, a charge operation and a discharge operation, a cleaning process, another coating process, for example, a conditioning process to achieve a specified temperature, There is a buffering process.

In a very preferred embodiment of the method according to the invention, the reactive treatment process of the component to which the plasma technique is applied is carried out at the front or the rear end of at least one of the UHV-CVD processes introduced according to the invention. In a very preferred embodiment, the reactive treatment process to which this plasma technique is applied is performed by low energy plasma emission, respectively, wherein the ion energy (E) at the surface of each treated component is as follows.

OeV <E ≤ 15 eV

Preferably this process can be combined with a reactive process with low energy plasma technology applied to the CVD process introduced in accordance with the present invention or a CVD process with plasma technology, in particular a reactive cleaning process with plasma technology. This preferred combination has the important advantage that the low energy plasma process prior to the UHV process creates the optimum surface conditions for the UHV-CVD process with respect to its surface action.

Preferably the surface purity is maintained when a plurality of cleaning processes with low energy plasma technology are applied in a hydrogen atmosphere and / or a nitrogen atmosphere before the UHV-CVD process or after other processes such as, for example, a conditioning process. The passivation action known for the process is reliably utilized until the UHV-CVD process.

Reference is made to Applicant's following application with regard to the cleaning process described above:

WO 97/39472

WO 00/48779

And US patents

09/792 055

If it is acceptable for this cleaning process to store this surface in air before the cleaned surface is bonded, even if the surface is exposed to “low pressure” vacuum conditions just prior to the UHV conditions, this surface will provide an optimal UHV-CVD coating. Provide the conditions.

In a highly preferred embodiment, a reactive cleaning process with this low energy plasma technique is performed just before the CVD process.

In another preferred embodiment of the method according to the invention a gas, preferably a gas comprising hydrogen, flows during loading and / or discharging the component to be treated by the CVD process into the reaction chamber. This safely prevents contamination of the reaction chamber by opening it, which is necessary for loading and / or releasing the reaction chamber.

The uniform coating temperature distribution during the coating process is of great importance in the manufacture of semiconductor components or in the process of growing thin films in a CVD process with respect to the manufacture of components having the same quality requirements as required for semiconductor components as described above. In well-known ultra-high vacuum CVD methods, this coating temperature distribution can be made uniform by mounting a segmented heating element outside the UHV reactor, i. By controlling the quantity of heating elements and their performance, the temperature uniformity in the reaction chamber can be maintained in an optimal state.

Thus, in a preferred embodiment according to the invention, the average temperature and temperature distribution in the reaction chamber in which the CVD process is carried out are measured and controlled, and preferably measured and controlled.

In this regard, it is of primary importance to control this variable itself, the average temperature and temperature distribution of the components processed in the CVD process. Thus, in another preferred embodiment, it is proposed to measure and control, preferably to measure and control the average temperature and temperature distribution of the component itself during the CVD process.

As mentioned above, the reaction chamber of the UHV-CVD reactor is heated by a heating element located at its outer wall. In another preferred embodiment of the present invention, the temperature in the reaction chamber where the CVD process is carried out is controlled by a heating element disposed in a vacuum in a vacuum container surrounding the reaction chamber.

In another preferred embodiment according to the invention the process chamber for the CVD process is first pumped into an ultra-high vacuum state of at least 10 ^-8 mbar, and then the process chamber voltage is introduced into the reaction chamber by injecting the process gas or process gas mixture into the process chamber. To increase. The reaction chamber is then surrounded by a vacuum having a process pressure zone, preferably a voltage of lower pressure.

This eliminates the need for the vacuum chamber to be vacuum tight to the vacuum surrounding the reaction chamber, and the state of the reaction chamber is almost unaffected by the gas diffused from the reaction chamber into the surrounding vacuum even when no vacuum is achieved. .

Preferably the reaction chamber and the vacuum surrounding it are pumped at different pressures.

In another preferred embodiment of the method according to the invention a reaction chamber and a vacuum surrounding it are formed in a receptor present in the ambient atmosphere, the reaction chamber being inlet / outlet of the receptor via a vacuum surrounding the reaction chamber for loading and discharging of the parts. Connected with

In another preferred embodiment of the method according to the invention, after the component is introduced into the reaction chamber for the CVD process and the reaction chamber is shut off, the component is preferably injected with a gas comprising hydrogen and / or a process gas or process gas mixture into the reaction chamber. This is converted into its thermal equilibrium state.

The injection of gas and its thermal conductivity accelerates the attainment of the thermal equilibrium of the part.

It is very important for the purposes of the present invention that the parts introduced into the reaction chamber of the CVD process reach their thermal equilibrium as quickly as possible without being damaged. Meeting these requirements can significantly increase the flow rate of these processes. Accordingly, a method of manufacturing a component of the above kind or an intermediate product thereof is proposed under consideration of the third aspect of the present invention, in which a plurality of components are simultaneously introduced into a CVD process under ultra-high vacuum conditions, and the component is a heating element. Is heated, and the heating element described above has a thermally interlocking relationship with the part via vacuum.

In a preferred embodiment, the component is fixed to the support during the CVD process, and the heating element is mounted to the support for each component.

This allows for a direct thermal action between the heating element and the component, which heating element can be introduced as an actuator to ensure the average temperature or temperature distribution of the component or for temperature average value control and temperature distribution control. In order to control the average temperature of each part and / or the temperature distribution in this part, it is desirable to measure each actual value, actual temperature or actual temperature distribution directly on the part as much as possible. In particular, the temperature distribution must be controlled even when a plurality of temperature controllers, i.e., heating elements are in thermal contact with the corresponding component. Thus, in another preferred embodiment of the method according to the present invention in consideration of the third aspect of the present invention, it is proposed to fix the parts to the support and to mount the temperature sensor to the support of each part during the CVD process.

In a very preferred embodiment of the method according to the invention a solution which takes into account the first, second and third aspects is applied.

There is also proposed a vacuum processing apparatus having an ultra-high vacuum CVD reactor in which the first aspect is considered in order to achieve the above object, which is equipped with a support for a plurality of parts to be processed simultaneously in the reactor. The reactor has at least one inlet / outlet and the opening described above is connected with a vacuum delivery chamber for the part.

Under consideration of the second aspect described above, another ultra-high vacuum CVD reactor is proposed having a support for a plurality of disc-shaped parts which must be processed simultaneously in the reactor, in which the support for accommodating the disc-shaped parts is in a horizontal state. It is formed to be loaded vertically.

Another preferred embodiment of the vacuum treatment plant according to the invention and the ultrahigh vacuum CVD reactor according to the invention is described in the following description and specified in claims 23 to 45.

A very preferred embodiment in the production method according to the invention is the deposition of a single atomic layer or layer system and / or the deposition of an epi layer or a hetero epi layer, so-called atomic layer deposition. Or a CVD process for coating a surface through a so-called deep trench in a grooved or hollow structure with a width to depth ratio of 1: 5 or less (1:10, 1:20, ..). It is about input.

1 schematically shows a vacuum treatment arrangement according to the invention, in particular for carrying out the invention and the manufacturing method according to the first aspect thereof. The UHV-CVD-reactor 1 has one support 3 for the batch of parts to be processed. The reaction chamber R in the reactor 1 is pumped through the vacuum pump device 5 to ultra high vacuum (UHV) conditions, preferably up to 10 ⁻⁸ mbar. As required for the CVD process, a process gas or process gas mixture G is fed from the gas tank apparatus 7 to the reactor 1, and the component 4 placed on the support 3 is the process gas or process gas. It is heated to the required reaction temperature by means of a heating device 9 schematically shown to activate the mixture G.

The UHV-CVD reactor 1 typically has a feed opening / discharge opening 11 which can be opened or closed by a valve. In the first aspect of the invention the opening 11 connects the reaction chamber R of the UHV-CVD reactor 1 with a vacuum transport chamber 13 according to the invention, which vacuum chamber, The vacuum pump device 15 schematically shows the vacuum during operation. In this conveyance chamber, the conveying apparatus T shown by the double arrow supplies parts to the reactor 1, or discharges it from the reactor. At least one other process chamber 17 is also connected to the transport chamber 13, which is a lock chamber, another vacuum transport chamber, a coating chamber, a cleaning chamber, an etching chamber, a heating chamber, It may be a buffer chamber or an implantation chamber.

At the heart of the first aspect of the invention is that the batch support 3 of the UHV-CVD reactor 1 is loaded and / or discharged through the vacuum delivery chamber 13 and in the first aspect of the manufacturing method according to the invention Just before the part is fed into the CVD process under ultrahigh vacuum conditions of the reactor 1, the part is already in vacuum.

In another preferred embodiment, another chamber 17 disposed immediately in front of the reactor 1 in relation to transport T is shown in FIG. 1 in a vacuum chamber, in particular in the actual field (“In-Situ”). It is a washing room put into). The parts are conveyed from the chamber 17 to the reactor by maintaining the vacuum condition by the conveying device T. Here all the parts are processed simultaneously using a batch on the support 3.

2 shows a manufacturing method and a corresponding UHV-CVD reactor according to the second aspect of the invention, schematically shown as in FIG. 1.

In the UHV-CVD reactor 1b according to the invention, it is preferably pumped by the vacuum pump device 5 to ultra-high vacuum conditions corresponding to a residual gas partial pressure P _R of up to 10 ^-8 mbar, the part 21 being It is fixed by the batch support 3a and at the same time CVD treatment. The part 21 is in the form of a disc. As already explained with reference to FIG. 1, a process gas or process gas mixture G is fed from the gas tank apparatus 7 to the reactor 1b and the component 21 is brought to the desired processing temperature by the heating apparatus 9. Heated.

In the present invention, as shown in Fig. 2, the disc shaped parts 21 are arranged horizontally by placement, and are stacked side by side vertically and fixed to the placement support 3a during the UHV-CVD process.

3 correspondingly to FIG. 1 or 2 shows a preferred embodiment of a vacuum treatment plant according to the invention or a manufacturing method according to the invention, the first and second aspects of the invention being It is realized in combination. UHV-CVD reactor 1b is formed as shown and described in FIG. Each disk-shaped part 21 which is sequentially loaded is supplied to the UHV-CVD reactor by the vacuum delivery chamber 13a, which is loaded on the batch support 3a according to the method described above. This eliminates the need for difficult and complicated handling of the entire component placement in the delivery chamber 13a.

In one or a plurality of process chambers 17a shown in broken lines, the components 21 are similarly horizontally aligned, and are then supplied to each UHV-CVD reactor via the transport chamber 13a, where the components are Horizontally aligned on the support 3a, vertically stacked and processed simultaneously. However, although a plurality of parts are loaded into the batch in each or all process chambers 17a, it is possible to supply the parts individually to the reactor 1b and / or the chamber 17a.

4 is a partial longitudinal cross-sectional view of a preferred embodiment of a UHV-CVD reactor in accordance with the present invention. Preferably this UHV-CVD reactor is introduced for carrying out the production process according to the invention or as part of a vacuum treatment plant according to the invention.

The UHV-CVD reactor according to the invention preferably comprises a reactor recipient 41 made of stainless steel. This reactor container is cooled to low temperature, for which the side wall 41a is tightly coupled to the cooling device at least section by section. As shown in Fig. 4, the side wall 41a is preferably implemented as a double wall at least in sections, and this double wall has an interspace 43 to be cooled. This cooling interspace contains a refrigerant piping system (not shown).

In Fig. 4, the side wall 41a is formed in a one-piece cylindrical shape. However, in some cases, the side wall 41a may be implemented in a multi-piece shape instead of a cylindrical shape. The reactor internal space I is likewise sealed to have a vacuum tightness at the top and bottom through the flanges 45o and 45u which are strongly cooled. 4 shows a refrigerant piping system 47o, 47u for cooling the flanges 45o, 45u.

In the reactor interior space I, a reaction recipient 48 surrounds the original reaction chamber R for the UHV-CVD process. At least the inner wall of the side wall 48a of the reaction container 48 is made of a material that is inert during the UHV-CVD process with respect to the process gas used in the reaction chamber R.

The reaction chamber R in the reaction container 48 is pumped to the ultra-high vacuum condition through the pump connection 49. Another reactor internal space (I) is pumped through the pump connection (51) at a pressure approximately corresponding to the process pressure in the reaction chamber (R). The pump connection 49 allows the reaction chamber R to be preferably pumped to a residual gas partial pressure of up to 10 ⁻⁸ mbar or to a process pressure of 10 ⁻¹ mbar to 10 ⁻⁵ mbar during the process, while other internal spaces I Is pumped at a pressure of 10 ⁻¹ mbar to 10 ⁻⁵ mbar depending on the residual gas partial pressure corresponding to the voltage of the reaction chamber R, that is, the pressure of the process gas after injection of the process gas during the UHV-CVD process.

In FIG. 4, both pump connections 49 and 51 are operated by the same pump device 53. Each pump action is measured through corresponding measurements on the pump cross sections of the pump connections 49 and 51, and in some cases such measurements are also realized through the valve 55, preferably the butterfly valve. However, it is also possible to pump the remaining space of the reaction chamber (R) and the reactor internal space (I) using a separate pump device.

During operation, i.e. during the UHV-CVD process, there is almost the same voltage in the reaction chamber (R) as in the remaining space of the reactor interior space (I), so that the reaction is completely vacuum tight to the remaining space of the reactor interior space (I). It is not necessary to seal the seal (R). However, this separation part is sealed to such a degree that gas diffusion from the reaction chamber R to the remaining space of the reactor internal space I is hardly achieved during the process. Preferably, the voltage in the remaining space of the reactor internal space I may be selected slightly less than the voltage in the reaction chamber R during the CVD process. In the reaction chamber R, a component support 57 is assembled, which in the preferred embodiment shown in FIG. 4 is in the state in which the disk-shaped component is formed horizontally, for example, formed as a wafer. Accepted in the form of vertical stacking. As indicated by the double arrows W, this support 57 is driven up and down in a controllable form. In order to be able to receive each discotic part 21 according to FIG. 3 in a batch or to be able to eject such a part, as shown in FIG. 3 this support essentially corresponds to the opening 11a of FIG. 3. Pass through the inlet / outlet respectively. In the preferred embodiment of FIG. 4 this inlet / outlet should not only penetrate the side wall 48a of the reaction container 48 but also through the reactor container 41 to allow mutual access to the reaction chamber R from the space outside the reactor. In the preferred embodiment of Fig. 4, the reaction receptor 48 is divided into an upper end 48o and a lower end 48u. This support 57 is fixed to the upper end 48o. The lift mechanism 59 raises the upper end 48o of the reaction receptor 48 and thus the support 57. On the symmetry plane E of the side wall 41a, an inlet / outlet 63 is formed, which can be blocked by a gate valve 61, which is formed at the upper end 48o and the lower end of the reaction container 48. 48u) coincide at least closely with the dividing line 65 formed in the blocking state of the receptor 48 between.

The loading and discharge of this reactor proceeds as follows:

The upper end 48o of the reaction receptor 48 and thus the support 57 are lifted up by the elevating device 59. The part receiving portion 56 to be discharged or loaded is moved from the support 57 to the height of the inlet / outlet 63 by a controlled step drive. Thus, the support 57 or its receiving portion 56 is loaded or discharged by the conveying device connected to the opening 63 through the opening 63 shown with the disc shaped part 65 in FIG.

When the parts to be processed by the support 57, in particular the wafers, are all loaded, the upper end 48o is lowered together with the support 57, thereby closing the reaction container 48.

Of course two openings 63 can be formed, for example for separate loading and discharging.

The reaction chamber R is maintained at the required processing temperature during the loading and discharging process. For this purpose, the heating device 67 is assembled in the residual space I, ie the vacuum space, which surrounds the reaction container 48. Preferably this heating device 67 is formed as a multizone radiation heater. It is also equipped with a heat spreader 69, for example graphite, in order to improve the temperature uniformity between the heating device 67 and the reaction acceptor 48. In order to mount the individual components instead of the diffuser 69, the sidewalls 48a of the reaction receptor 48 may perform a diffusion function by coating a diffusion material, preferably graphite, inside and / or outside the reaction receptor. . In some cases, the side wall of the receptor 48 may act as a diffuser, in which case the side wall is preferably made of a diffusing material such as graphite, for example Si or SiC, or directly defined by the reaction chamber (R). It is coated therein with a material that is inert to the heated process gas.

Also preferably, as shown in Fig. 4, a heat insulator 71 made of, for example, a porous graphite material is mounted between the inner surface of the side wall 41a and the heating device 67.

Once the reaction receptor 48 is sealed, the original process for thin film deposition can be initiated on the part 56 secured to the support 57. The process gas or process gas mixture G is supplied from the gas tank apparatus 52 to the reaction chamber R via the gas suction system 73. The desired thin film deposition takes place depending on the type and time of the process gas sucked at the correctly set part temperature and preferably the temperature distribution, during which the part is exposed to that gas.

As already mentioned above in the introduction, in the thin film deposition through UHV-CVD and the quality of the semiconductor member, it is very important that the components have the same and uniformly distributed processing temperatures during the CVD process. In Fig. 4, how the heating device 67 is arranged during the vacuum is explained.

Although not shown in FIG. 4, as shown schematically in FIG. 5, a plurality of radiant heaters 67a, 67b, 67c... Are disposed along the sidewall 48a of the reaction receptor 48. Preferably, a plurality of thermal sensors 75a, 75b .. are assembled inside the reaction chamber R. The output signal of the thermal sensor is preferably transmitted to the computing device 77 in a digitized state, in which the temperature distribution in the reaction chamber R as shown in the block of the computing device 77 (x, y)) is measured at the output signal of the thermal sensors 75a, 75b, 75c .., and also the average temperature ( ) Level is measured. In addition, the designated or assignable levels can be achieved via the input device 68 schematically shown in FIG. A target temperature distribution (W) of? Preferably, a control signal Sa, Sb, Sc .. is output to each heating element 67a, 67b .. installed on the output side of the arithmetic unit 77 incorporating a control device 79 that operates digitally. Therefore, the temperature distribution in the reaction chamber (R) is due to the different temporally and numerically different conditions of the heating elements 67a, 67b .. that act as actuators. (x, y)) and its temperature level ( ) Is controlled by the specified target distribution and the specified target level.

In place of or in addition to the thermal sensors 75a, 75b, 75c which are preferably arranged in the side wall 48a of the reaction receptor 48 in the reaction chamber R according to FIG. It is preferable to mount the heat sensor, preferably the heating element, directly on the site.

In FIG. 6, it can be seen that a plurality of component receiving portions 77a, 77b .. are assembled to the support 57 according to FIG. 4 in the form of a partially enlarged cross-sectional view. In these accommodating parts 77a, 77b .., the disk-shaped part 21 to be processed is disposed, for example, on the protruding support 79. Preferably, a plurality of heating elements 81a, 81b are disposed on the surfaces of the receiving portions 77a, 77b .. facing the part 21, and the heating elements are in thermal contact with the surface of the part. . In addition, a thermal sensor 83 is arranged adjacent to the mounted component 21. On the one hand the temperature distribution is measured by means of a thermal sensor 83 at each component 21, and on the other hand a plurality of heating elements 81a, 81b, 81c .. preferably mounted and / or shown in FIG. 4. It is possible to maintain this temperature distribution and its absolute temperature level via the multispace radiant heater of one heating device 67.

The measurement signal lines and control signal lines of the thermal sensor 83 or the heating element 81 (not shown in the figure) are guided, for example, by the vertical arm 57a of the support 57.

In the following, as shown in Fig. 4, the UHV-CVD process performed in the reactor is described as an example. The following describes in detail the preferred growth of p-doped silicon germanium (SiGe) layers, for example for heterojunction bipolar transistors, and this process progression also applies to the deposition of other layers without other conditions.

The reaction chamber R is heated to the required treatment temperature T _P. Heated to a temperature of 550 ° C. for the deposition of the silicon germanium (SiGe) layer described above.

The inlet 63 opens the vacuum conveying chamber due to the opening of the valve 61 while sucking the scavenging gas, preferably hydrogen, through the gas intake system 73 from the gas stored in the tank device 52. Open against 13a). In the preferred embodiment according to FIG. 4, at the same time the upper end 48o is moved together with the support 57 via the drive device 59.

The component according to FIG. 4, in particular the wafer, is loaded into the support 57 while maintaining the cleaning gas flow, and in order to align the free receptacle 77 according to FIG. 6 with the inlet 63 and the loaded robot, It is moved in stages through the drive unit 59 (with the upper end 48o).

After loading of the support body 57, the inlet 63 is blocked by the valve 61, and as shown in FIG. 4, the reaction chamber R also lowers the upper end portion 48o and simultaneously lowers the support body 57. Is switched to the processing position.

Preferably for the production of a gas, preferably hydrogen gas and / or the above-described silicon germanium layer, which increase the thermal conductivity of the reaction chamber atmosphere, the component or wafer is introduced until the thermal equilibrium is reached with simultaneous introduction of silane.

If the heat conduction gas is not a process gas, the flow is stopped, and now the process gas or process gas mixture G is brought from the gas tank apparatus 52 to the sealed reaction chamber R by the intake apparatus 73. Is inhaled. The first layer is deposited on the component surface or the wafer surface. Silane is injected as a process gas when manufacturing components on parts or wafers using p-doped silicon germanium layers.

This completes the first coating process and releases the wafer or component from the reaction chamber R if no other layer is to be deposited.

For this the access for the transport robot mounted in the vacuum delivery chamber 13a is possible by resuming the cleaning gas flow, preferably hydrogen flow, and through the opening of the valve 61 and the movement of the upper end 48o. In order to align the processed wafer to access the inlet / outlet 63, the support 57 is raised or lowered in stages again.

However, if another layer is to be deposited, the following process proceeds after the deposition of the first layer. As an example the deposition process of a p-doped silicon germanium layer is described.

As described above, after deposition of the Si layer, an undoped layer of silicon germanium is deposited, with germane and helium added to the silane flow, preferably up to about 5% of the silane flow.

Diborane is then added to the helium stream and a doped layer of silicon germanium is deposited. In this process step, further carbon doping proceeds in parallel with boron doping.

Deposition of the undoped silicon germanium layer is carried out again with only silane and germane being injected into helium.

Deposition of an undoped Si layer is then carried out with injection of only silane.

As described above, the release of the support 57 is now carried out in the next process.

In the combination of the first and second aspects of the present invention shown on the basis of FIG. 3, the UHV-CVD reactor can be combined with other process modules via one or a plurality of vacuum delivery chambers in connection with the purposes of the presented invention. Desirable possibilities are provided in which no interruption of the vacuum conditions provided during the transport of parts between the process module and one or a plurality of UHV-CVD reactors occurs. In addition to the above-described UHV-CVD reactor, as a process module

-Other transport modules

Lock module

Heating module

Other coating modules for PVD or CVD coating processes or Plasma Enhanced CVD (PECVD) processes

Etching modules with or without plasma application technology

-Cleaning module

Storage module

Implantation module

Such multi-process station installations can be formed linearly, in which part transport proceeds mostly linearly between each process station. Preferably, however, in some cases, in order to form a circular pant or annular plant section, the process stations can be arranged in an annular group around the vacuum conveying chamber. Such a facility, in which a plurality of process stations are operated in a vacuum through a linear and / or annular delivery path, is generally referred to as a "Cluster Tool Plant."

7 schematically shows a cluster tool arrangement according to the invention, constructed according to the principles described on the basis of FIG. 3 and arranged as an example of an annular arrangement. In the example shown, a general atmosphere side cassette loading module 93, known as a so-called front opening unified pod (FOUP) module, is included. This cassette stacking module 93 accommodates at least one wafer cassette or component cassette 93a in the case of processing a wafer at a capacity capable of processing 25 wafers of a horizontally arranged type, for example, stacked vertically. To form. In addition, each wafer is conveyed from the wafer cassette 93a to the first lock chamber 97 through the wafer handler 95 operating in a general atmosphere. After the lock chamber 97 is pumped, the wafer is continuously transferred to the cleaning module 99. This process is carried out by the vacuum transfer chamber 101 and the wafer handler 101a operating in a vacuum therein. The cleaning module 99 is subjected to high temperature cleaning in a hydrogen atmosphere or other gas phase cleaning or more preferably with a low energy plasma described later.

Of course, depending on which cleaning scheme is selected, it may be advantageous to transfer a plurality of cleaning modules sequentially and to perform each cleaning step in this module. Also preferably, the buffer chamber 103 and the second cleaning module 99a are mounted. This allows the wafer of the lock chamber 97 to be cleaned in parallel, ie simultaneously, in both cleaning modules 99 and 99a, and then the wafer is stored in the storage chamber 103 of the buffer chamber 103 by a handler 101a operating in vacuum. Is put into. This process proceeds until the wafer quantity acceptable by the support in the UHV-CVD reactor 105 is cleaned in the buffer chamber 103 and ready for the UHV-CVD process. Preferably both chambers 97 and 103 are formed as a lock chamber including a cassette receptacle.

Then, that is, after the required number of cleaned wafers have been introduced into the buffer chamber 103, each wafer is processed by the handler 101a operating in vacuum, preferably in the corresponding UHV-CVD reactor 105 described with reference to FIG. Is carried in a very short time.

After finishing the CVD process, the wafer is transferred from the support 57 of the UHV-CVD reactor 105 back to one of the two lock chambers 97, 103, ie, to its cassette, and then continues to the lock chamber 97, 103. ) Is transferred to the cassette of the cassette stack module 93.

Wafers are transported and cleaned by the principle method described on the basis of Figs. 1-3 and the preferred UHV-CVD reactor according to Fig. 4, the dimensions being at least 200 × 200 mm and the diameter φ at least 200 mm, preferably The batch can be finally UHV-CVD in a batch structure having dimensions of at least 300 × 300 mm and a diameter Φ of 300 mm or more. This is particularly desirable in the UHV-CVD process because different processing steps and transport of individual wafers are made independent of the batch apparatus.

In the following a typical handling sequence is described with respect to the annular cluster tool arrangement according to FIG. 7.

For example, 25 wafers having a diameter Φ of at least 200 mm and a dimension of 200 × 200 mm or a diameter Φ of at least 300 mm and a dimension of 300 × 300 mm are loaded into the atmosphere side cassette module 93 according to FIG. 7. do. The wafer is then conveyed from the cassette module 93 to the cassette of one of the lock chambers 97 and 103 by the wafer handler 95 individually.

In the lock chambers 97, 103, individual wafers from the cassette 97 are loaded into the cleaning modules 99, 99a by a handler 101a operating in the vacuum delivery chamber 101, where 1 to 10 per wafer. It is cleaned with a typical cleaning time of minutes.

Wafers cleaned in the cleaning modules 99, 99a are now loaded into the cassettes of the lock chambers 103, 93 which act as buffer chambers and have not yet been loaded. This process is performed by the handler 101a operating in the vacuum chamber 101. The typical process time for cleaning 25 wafers and transporting up to this point is 65 minutes.

The 25 cleaned wafers are now loaded into the UHV-CVD reactor 105 by the handler 101a in the cassette of the lock chamber 103. The typical time for loading the cleaned 25 wafers from the buffer chamber 103 to the support 57 for wafer placement in the UHV-CVD reactor 105 is less than 5 minutes.

The coating process is now initiated in a UHV-CVD reactor, with a typical process time for a p-doped silicon germanium coating system being about 2-3 hours. During this period a new cassette containing an unprocessed wafer is introduced into the cassette stack module 93, which is cleaned in the cleaning modules 99 and 99a and stored in one of the lock chamber cassettes in the manner described above. After completion of the UHV-CVD process, the processed wafers are individually released from the support 57 by the wafer handler 101a and put into the empty cassettes of the lock chambers 97 and 103. Here, the conveyance of the cassette stacking module 93 to the empty cassette is made by the handler 95a operating in the atmosphere.

Depending on the time situation of the intended process, two or more of the above-described UHV-CVD processes can be carried out in combination in a cluster facility, and correspondingly other combinations of process modules are possible.

In particular, it is desirable to combine the aforementioned UHV-CVD process or reaction with a CVD coating method in which low energy plasma technology is applied and a reactive cleaning method in particular low energy plasma technology. In this case, preferably, a DC-plasma, more preferably a low energy plasma is introduced, for example, the plasma generates a thermal ion cathode (E) which generates the following ion energy (E) at each surface to be coated or to be cleaned. Is formed by

0 <E ≤ 15 eV

As a reactive gas for the cleaning method to which the above-mentioned low energy plasma technique is applied, very preferably a gas comprising hydrogen and / or nitrogen or at least the above-described gas component is used. With regard to the installation according to FIG. 7 very preferably the cleaning process immediately preceding the UHV-CVD process or the corresponding process station is realized for a reactive cleaning process in which low energy plasma technology is applied.

Using the process according to the invention, the vacuum treatment equipment according to the invention or the UHV-CVD reactor according to the invention, the parts are produced by atomic layer deposition or the deposition of epitaxial layers or It is made through the coating of a surface comprising a so-called deep trench.

Claims (48)

Components used in manufacturing are parts a) entered into the treatment process and then b) a plurality of components are simultaneously introduced into the CVD process under ultra-high vacuum conditions, In the method of manufacturing the component or its intermediate product, Wherein the treatment process is a vacuum process and the components are transferred to the CVD process under vacuum in this process. 1. A method of manufacturing a component or intermediate thereof, wherein the component is disc-shaped and comprises the feature (b) described in the introduction of claim 1 Characterized in that this component is introduced horizontally into the ultra-vacuum CVD process. 2. The method of claim 1, wherein the component is disc shaped and fed into the CVD process as well as the processing process in a horizontal state and transferred from the processing process to the CVD process in a horizontal state. The method of claim 1, wherein the component remains in a vacuum between the CVD process and the cleaning process prior to the CVD process. The method according to any one of claims 1 to 4, wherein the part is disc-shaped, placed horizontally and vertically loaded and simultaneously introduced into the CVD process. The method of claim 5, wherein the parts are loaded for the CVD process by separate transport and / or released again in the CVD process. The process of claim 1, wherein the part is subjected to two or more processing processes, the CVD process belongs to this process, and the part is continuously along a linear and / or circular conveying track. Characterized in that it is conveyed from one process to another. 8. The ion energy (E) according to claim 1, wherein the component is subjected to a reactive treatment process with low energy plasma technology applied before and / or after the CVD process and the ion energy (E) applied to the surface of each treated component is 0 eV < E &lt; 15 eV. 10. The method according to claim 8, wherein the part is subjected to a reactive cleaning process to which low energy plasma technology is applied, prior to the CVD process, preferably in an atmosphere comprising hydrogen and / or nitrogen. 10. The process according to any one of claims 1 to 9, wherein during the loading and / or discharging of the components to be treated in the CVD process under ultra-high vacuum conditions, the reaction chamber is preferably provided with a gas flow by a gas comprising hydrogen. Formed. The method according to claim 1, wherein the average temperature and temperature distribution in the reaction chamber of the CVD process are measured and controlled, preferably measured and controlled. The method according to claim 1, wherein the average temperature and the temperature distribution of the component itself are measured and controlled, preferably measured and controlled during the CVD process. The method according to any one of claims 1 to 12, wherein the reaction chamber in which the CVD process is performed is heated by a heating element in a vacuum container surrounding the reaction chamber. The process of claim 1, wherein the reaction chamber for the CVD process is pumped into ultrahigh vacuum and then the voltage rises to the process pressure by injecting the process gas or process gas mixture into the reaction chamber and the process pressure range. Preferably, the reaction chamber is surrounded by a vacuum having a lower voltage. 15. The method of claim 13 or 14, wherein the reaction chamber and the vacuum surrounding it are pumped at different vacuum pressures. The process of claim 13, wherein the reaction chamber and the vacuum surrounding the reaction chamber are disposed in a receptor present outside of the ambient atmosphere, and the reaction chamber surrounds the reaction chamber for loading and / or release of components. Connecting to the inlet / outlet of the receptor via vacuum. 17. The process according to any one of claims 1 to 16, wherein after the part has been introduced into the reaction chamber for the CVD process, it is preferably under the conditions of injecting a gas comprising hydrogen and / or a process gas or process gas mixture into the reaction chamber. And the part reaches its thermal equilibrium. In a method of manufacturing a component or an intermediate product thereof, in which a plurality of components used for manufacturing are simultaneously introduced into a CVD process under ultra-high vacuum conditions as a component and the component is heated by a heating element, The heating element is operated in vacuum. 19. The method according to claim 18, wherein the parts to be subjected to the CVD process are fixed on the support and preferably a heating element is mounted to the support for each part. 20. The method according to claim 18 or 19, wherein the part is fixed to the support during the CVD process and preferably a thermal sensor is mounted to the support for each part. In a vacuum treatment facility having an ultra-high vacuum-CVD reactor having at least one inlet / outlet and a support for a plurality of parts being processed simultaneously in the reactor, Wherein at least one inlet / outlet is connected to a vacuum chamber for the part. In the ultra-high vacuum-CVD reactor having a support for a plurality of disk-like parts processed simultaneously in the reactor, Ultra-high vacuum-CVD reactor, characterized in that the support for accommodating the component is located in a horizontal position and mounted vertically. The vacuum processing facility of claim 21 for processing disc-shaped parts, And a support for accommodating parts is formed horizontally and vertically loaded in the reactor. 24. The vacuum according to claim 21 or 23, wherein the vacuum conveying chamber has a conveying device, which conveys the parts individually or conveys the plurality of parts, and the disk-shaped parts are conveyed in a horizontal state. Processing equipment. 25. The vacuum treatment plant according to any one of claims 21, 23 or 24, wherein the vacuum transport chamber communicates with one or a plurality of other vacuum process chambers consisting of the following chambers. Locking chamber, coating chamber, cleaning chamber, etching chamber, UHV-CVD processing chamber, conditioning chamber such as heating chamber, buffer chamber, injection chamber. The vacuum processing apparatus according to claim 25, wherein a conveying apparatus driven in a rotatable form about a rotating shaft is mounted in the vacuum conveying chamber. 27. The vacuum processing apparatus according to claim 25, wherein a conveying device having a drive unit operating linearly is mounted in the vacuum conveying chamber. 28. The reactor according to any one of claims 21 to 27, wherein the reaction receptor encloses the reaction chamber, the reaction receptor is wound at least at intervals with the reactor receptor spaced apart from the reaction receptor, and not only the reaction receptor but also the reactor receptor, respectively. Vacuum processing facility or UHV-CVD reactor, characterized in that it has one pump connection. 29. The vacuum treatment plant or UHV-CVD reactor of claim 28, wherein the pump connection of the reaction receptor has a significantly greater cross-sectional area than the pump connection of the reactor receptor and both pump connections are directed to the same pump device. 30. The vacuum treatment plant or UHV-CVD reactor according to claim 28 or 29, wherein the reactor receptor is associated with a cooling device. 31. The vacuum treatment plant or UHV-CVD reactor of claim 30, wherein the sidewalls of the reactor receptor are formed at least in part by double walls and a cooling device is mounted in the space between the double walls. 32. The reactor part according to any of claims 28 to 31, wherein the reactor receptor has at least one inlet / outlet for the component and the reaction receptor is divided into two receptor parts that are relatively operable via a motor. Can be coupled to the receptor via a motor or moved to the opening of the receptor and separated from each other, wherein the separation line of both parts in the coupled state coincides with the inlet / outlet. 33. The vacuum treatment plant or the UHV of claim 32, wherein the inlet / outlet is formed horizontally and, in the combined state, the separation lines of both parts proceed similarly horizontally in most of the longitudinal sections opposite the inlet / outlet. CVD reactor. 34. The method of claim 33, wherein the support for the plurality of disc shaped parts is secured to one of the two side parts of the reaction receptor, and the relative movement direction of the reaction receptor part such that each receiver is directed towards the inlet / outlet through the relative movement of the part. A vacuum processing plant or UHV-CVD reactor, characterized in that a plurality of receiving portions for at least one discotic component in the horizontal direction are stacked vertically. 35. The vacuum processing plant or UHV-CVD reactor of any one of claims 32 to 34, wherein the parts can be separated or recombined through relative linear motion. 36. The vacuum treatment plant or UHV-CVD reactor according to any one of claims 32 to 35, wherein one of the two parts of the detachable reaction receptor is assembled so as not to move in the reactor receptor. 37. A process according to any one of claims 28 to 36, wherein the gas injection device is connected to the reaction receptor in a gas tank device comprising the process gas, at least the inner side of the reaction receptor sidewall being connected to the process gas heated to the set treatment temperature. A vacuum treatment plant or UHV-CVD reactor, characterized in that it consists of a material which is durable against a material, preferably graphite. 38. The vacuum treatment plant or UHV-CVD reactor according to any of claims 28 to 37, wherein a heating device is present between the reaction receptor and the reactor receptor. The vacuum treatment plant or UHV-CVD reactor of claim 38, wherein a thermal diffusion device is present between the interior space of the reaction receptor and the heating device. 41. A vacuum treatment plant or UHV according to any one of claims 28 to 40, wherein a support for the plurality of parts is present in the reaction receptor and at least one, preferably a plurality of thermal sensors are attached to the support. CVD reactor. 41. The vacuum of claim 40 wherein at least one thermal sensor is an actual value meter of a temperature control circuit and the heating device is mounted as an actuator between the reactor receptor and the reaction receptor and / or in the reaction receptor or on a portion of the support. Treatment plant or UHV-CVD reactor. A UHV-CVD reactor having a support for a plurality of parts, wherein at least one thermal sensor is present on the support. 43. The UHV-CVD reactor of Claim 42, wherein at least one heating element is mounted to the support. 44. The UHV-CVD reactor of claim 42 or 43, wherein the at least one thermal sensor is an actual value meter of a temperature control circuit of the support. 45. The apparatus according to any one of claims 41 to 44, wherein the support has a plurality of receptacles for accommodating the parts, and at least one heating element is in one of the receptacles so as to be in thermal contact with the parts contained in the receptacles. UHV-CVD reactor, characterized in that attached to. 21. The method of any one of claims 1 to 20, wherein atomic layer deposition is performed in a CVD process. 21. The method of any of claims 1 to 20, wherein deep trench coating deposition takes place in a CVD process. 21. The method of any one of claims 1 to 20, wherein epi layer deposition takes place in a CVD process.