KR20040041333A - Apparatus for manufacturing semiconductor device - Google Patents

Abstract

PURPOSE: An apparatus for manufacturing a semiconductor device is provided to be capable of smoothly exhausting particles in a chamber and minimizing the chipping of a cover ring. CONSTITUTION: An apparatus for manufacturing a semiconductor device is provided with a chamber(100) for carrying out a predetermined process, a chuck(150) located at the predetermined portion in the chamber for stably supporting a wafer(W), and a cover ring(130) for enclosing around the chuck. At this time, the upper portion of the cover ring is inclined toward the edge. The apparatus further includes an inflow pipe(110), a through pipe(112), and a focus ring(132).

Description

Semiconductor device manufacturing device {APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE}

The present invention relates to an apparatus used in a semiconductor manufacturing process, and more particularly, to a chamber in which a process is performed, a chuck positioned in the chamber to support a wafer, a focus ring surrounding the chuck, and a focus ring to protect the focus ring. It relates to a covering surrounding the outer circumferential surface of the ring.

During the semiconductor manufacturing process, a process of etching various films formed on a wafer is continuously used. Such etching processes include wet etching using liquid chemicals and dry etching using gaseous gases. In the dry etching method, plasma etching using plasma has been widely used in recent years. Plasma etching may be performed by etching an insulating film, a silicon film, and a metal film using a high density plasma source in a semiconductor manufacturing process.

BACKGROUND OF THE INVENTION [0002] A semiconductor manufacturing apparatus generally used includes a chuck supporting a wafer, a focus ring protecting an outer surface of the chuck, and a quartz covering covering the focus ring. The polymer generated during the etching process is exhausted through the exhaust pipe, and the non-vented polymer remains inside the chamber. Residual polymer in the chamber will continue to build up locally on top of the relatively low temperature coverings in the process. The stacked polymer is impacted during the process and the polymer is peeled off to generate particles. In the semiconductor manufacturing process, particles in the chamber are required to be discharged as much as possible during the exhaust process to minimize the effect on the wafer. However, in the semiconductor manufacturing equipment which is generally used, smooth exhaust is not achieved. This is because the upper surface of the focus ring and the covering ring is horizontal, and the edge portion of the covering is formed at right angles. The edge part of the covering is frequently subjected to chipping due to the orthogonal structure, the temperature difference between the inside and the outside, and the continuous collision of particles during exhaust. These factors contribute to lower facility efficiency, higher costs, and lower process yields.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor manufacturing apparatus capable of minimizing the smoothing of particles in a chamber and the peeling of the covering.

1 is a cross-sectional view of a typical chuck:

2 is a schematic drawing showing particles laminated to a chuck:

3 is a view showing a poor exhaust flow of the chuck.

4 is a schematic view of a semiconductor manufacturing apparatus according to a preferred embodiment of the present invention:

5 is a view showing a smooth exhaust flow of particles in the chamber.

* Description of the symbols for the main parts of the drawings *

100: chamber 110: introduction pipe

112: through tube 120: reaction gas supply pipe

130: covering 132: focusing

150: Chuck

In order to achieve the above object, a semiconductor manufacturing apparatus of the present invention is a chamber in which a process is performed, a chuck positioned in the chamber to support a wafer, a focus ring installed around an outer circumferential surface of the chuck to protect the chuck, and surrounding the focus ring. It comprises a covering. And the upper portion of the covering is a device characterized in that it has a structure obliquely obliquely downward to the edge side.

According to the present invention having the above-described structure, the chipping phenomenon does not occur near the edge of the covering, and the particles in the process chamber are smoothly exhausted to double the efficiency of the process.

Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to FIGS. 4 and 5.

This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape of the elements in the drawings and the like are exaggerated to emphasize a clearer description.

4 is a view schematically showing a structure of a chamber in which an electrostatic chuck is installed in the present invention.

Referring to FIG. 4, a device used in a semiconductor manufacturing process includes a gas introduced through a reaction gas supply pipe 120 through which a reaction gas is supplied from the outside, a chamber 100 in which a process is performed, and a reaction gas supply pipe 120. The focus ring 132 and the focus ring 132 installed around the outer circumferential surface of the shower head 113, the chuck 150 supporting the wafer W, and the chuck 150 are evenly distributed. Wrapping is made of a covering 130 made of a quartz material to keep the chuck 150 and the periphery, the chamber 100 to maintain a high vacuum state and pumped residual gas or particles. And the upper portion of the covering 132 has a structure inclined obliquely toward the edge.

When the process proceeds, the reaction gas is introduced into the introduction pipe 110 inside the chamber 100 through the reaction gas supply pipe 120 installed in the upper part from the reaction gas supply source outside the chamber 100. The reaction gas introduced into the introduction pipe 110 is evenly distributed through the through hole 112 of the shower head 113 installed above the chamber 100 and sprayed onto the wafer (W). The reaction gas is in a plasma state by applying high frequency power to the upper electrode and the lower electrode in the chamber 100. Plasma formed from the reaction gas selectively etches the exposed surface of the wafer by electron bombardment and chemical erosion.

The focus ring 132 serves to protect the chuck 150 by surrounding the outer circumferential surface of the chuck 150. The focus ring 132 also makes the plasma supplied on the wafer uniform so that the characteristics of the semiconductor device being manufactured are maintained in-plane of the wafer. The material of the focus ring 132 is the same material as that of the silicon wafer to reduce impurities. Monocrystalline silicon is used. The focus ring 132 is connected to the high frequency power supply through the lower electrode, thereby increasing the area of the lower electrode.

The covering ring 130 isolates the focus ring 132 and the chuck 150 wrapped around the focus ring 132 from the outside to protect the focus ring 132 and the chuck 150 from the outer circumferential surface of the focus ring 132. It is formed in the form of a wrapping ring. In addition, the detachable structure is made of a quartz material. The upper portion of the covering 130 has a structure inclined downward obliquely toward the edge. The structure of this covering 130 is an important feature of the present invention. During the process, a large number of particles are generated in the chamber 100. Particles generated during the process are collected at the upper portion of the relatively low temperature covering (130). Particles generated during the process are naturally removed due to the structure of the covering 130, when the particles fall on the surface of the covering 130, the particles naturally slide toward the exhaust port. In addition, due to the structure of the covering 130, the particles generated during the process can also eliminate the phenomenon of the stacking on the surface of the covering 130. The peeling phenomenon that is generated due to the rectangular structure near the edge of the conventional covering is also minimized by changing to the above structure.

5 shows a smooth exhaust flow of particles generated inside the chamber 100.

Referring to FIG. 5, a large number of particles are generated in the chamber 100 during the process. It is important to exhaust these particles without leaving a residual amount in the chamber 100. Thus, the present invention is to be inclined downward so that the height is lowered toward the edge of the covering 130, so that the particle flow smoothly during the exhaust process.

The present invention has been described above by way of example and the present invention has been described, but the present invention is not limited thereto, and various embodiments and modifications may be made without departing from the spirit and technical scope of the present invention.

The semiconductor manufacturing apparatus of the present invention can be prevented from generating particles by minimizing the smooth exhaust of particles in the chamber and the peeling phenomenon near the edges by lowering the upper portion of the covering toward the edge to further lower the height.

Claims (1)

In the device used in the semiconductor manufacturing process, A chamber in which the process proceeds; A chuck positioned in the chamber and supporting the wafer; Including a covering surrounding the circumference of the chuck, The upper portion of the covering is a semiconductor manufacturing apparatus characterized in that it has a structure inclined downward toward the edge.