KR20040040101A - CMP Operating a Dresser with a Sweep Motor - Google Patents
CMP Operating a Dresser with a Sweep Motor Download PDFInfo
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- KR20040040101A KR20040040101A KR1020020068432A KR20020068432A KR20040040101A KR 20040040101 A KR20040040101 A KR 20040040101A KR 1020020068432 A KR1020020068432 A KR 1020020068432A KR 20020068432 A KR20020068432 A KR 20020068432A KR 20040040101 A KR20040040101 A KR 20040040101A
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- KR
- South Korea
- Prior art keywords
- dresser
- pad
- sweep motor
- turntable
- predetermined direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
본 발명은 기계화학연마장치(CMP)에 관한 것으로, 상세하게는 연마후에 발생할 수 있는 패드(pad) 내의 슬러리(slurry) 등의 잔존물을 효과적으로 배출하여 제거시킬 수 있는 연마장치의 드레서 구동장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mechanical chemical polishing apparatus (CMP), and more particularly, to a dresser driving apparatus of a polishing apparatus capable of effectively discharging and removing residues such as slurry in a pad that may occur after polishing. will be.
집적회로 등의 반도체 제품의 제조에 있어서 집적회로의 용량 증대화의 요구에 따라 회로의 집적도가 높아지고 있으며, 이에 수반하여 회로의 층 사이의 절연막도 얇아지고 있다. 이러한 요구에 부응한 반도체 제조공정의 한 예를 보면, 실리콘 기판 상에 배선 패턴에 따라 배선홈을 형성하고, 배선홈이 형성된 실리콘 기판의 전체 표면 상에 알루미늄 등의 도전물질층을 형성한 후, 이 도전물질층을 연마하여 배선홈 내에만 도전물질이 남겨지도록 함으로써 배선패턴을 형성하고 있다. 다층의 배선을 적층하게 되면, 이러한 공정이 반복 수행된다. 이와같이 도전물질층 등의 도포층을 연마하여 일정한 두께로 형성시키기 위하여 사용되는 장치가 화학기계연마장치(CMP)이다.In the manufacture of semiconductor products such as integrated circuits, the degree of integration of circuits has increased due to the demand for increasing the capacity of integrated circuits, and with this, the insulating films between the layers of the circuits have also become thinner. According to one example of a semiconductor manufacturing process that satisfies this demand, a wiring groove is formed on a silicon substrate according to a wiring pattern, and a conductive material layer such as aluminum is formed on the entire surface of the silicon substrate on which the wiring groove is formed. The wiring pattern is formed by grinding the conductive material layer so that the conductive material remains only in the wiring groove. When the multilayer wirings are stacked, this process is repeated. Thus, a chemical mechanical polishing apparatus (CMP) is used to grind an application layer such as a conductive material layer to form a constant thickness.
도1은 종래의 화학기계연마장치의 드레서 구동장치를 개략적으로 도시하고 있는 사시도이다. 도1에 도시된 바와같이, 회전가능한 턴테이블(11) 상에 연마기구인 패드(13)가 부착되어 있다. 패드(13)의 표면에는 연마제인 슬러리를 담을 수 있는 다수의 마이크로홀들로 구성된 모가 있다. 패드(13)가 부착된 턴테이블(11)의 상부 일측에는, 웨이퍼를 흡착하여 턴테이블(11) 상부로 이동시킨 후 푸싱과 회전을 하면서 흡착된 웨이퍼가 패드(13)에 의해 연마되도록 하는 웨이퍼지지부(15)가 구비되어 있다. 또한, 패드(13)가 부착된 턴테이블(11)의 상부 타측에는, 웨이퍼의 연마 후 푸싱과 회전을 하면서 패드(13)에 잔존하는 슬러리(slurry) 등을 배출시키고 웨이퍼를 연마할 때 마모되어 평탄도가 깨어진 패드(3)를 평탄화 시키는 드레서(17)가 구비되어 있다. 그리고, 웨이퍼지지부(15)와 턴테이블(11)이 회전하면서 웨이퍼를 연마할 때 연마제로 쓰이는 슬러리를 공급하는 슬러리공급라인(19)이 구비되어 있다.1 is a perspective view schematically showing a dresser driving device of a conventional chemical mechanical polishing device. As shown in Fig. 1, a pad 13, which is a polishing mechanism, is attached to the rotatable turntable 11. On the surface of the pad 13 there is a hair composed of a plurality of micro holes that can contain slurry, which is an abrasive. On the upper side of the turntable 11 to which the pad 13 is attached, a wafer support part for adsorbing the wafer to move the upper portion of the turntable 11 and pushing and rotating the wafer while the adsorbed wafer is polished by the pad 13 ( 15) is provided. In addition, on the other side of the upper side of the turntable 11 to which the pad 13 is attached, a slurry or the like remaining on the pad 13 is discharged while pushing and rotating after polishing the wafer, and worn and flattened when polishing the wafer. A dresser 17 is provided to planarize the broken pad 3. In addition, a slurry supply line 19 for supplying a slurry used as an abrasive when polishing the wafer while the wafer support 15 and the turntable 11 rotates is provided.
이러한 구성을 갖는 일반적 화학기계연마장치의 동작을 보면,웨이퍼지지부(15)가 웨이퍼를 흡착한 후 턴테이블(11) 상부로 이동한다. 턴테이블(11)을 회전시키면서 슬러리공급라인(19)을 통해 슬러리를 공급한다. 공급된 슬러리는 패드(13)에 형성된 다수의 마이크로홀에 삽입된다. 이후, 웨이퍼지지부(15)가 푸싱 및 회전하면서, 반대방향으로 회전하는 패드(13) 내의 슬러리에 의해 웨이퍼가 연마된다.In operation of a general chemical mechanical polishing apparatus having such a configuration, the wafer supporting portion 15 moves on the turntable 11 after absorbing the wafer. The slurry is supplied through the slurry supply line 19 while rotating the turntable 11. The supplied slurry is inserted into a plurality of micro holes formed in the pad 13. Then, the wafer support 15 is pushed and rotated, and the wafer is polished by the slurry in the pad 13 rotating in the opposite direction.
연마가 완료되어 웨이퍼지지부(15)가 원위치 되면, 드레서(17)를 턴테이블(11)의 상부로 이동시킨 후, 턴테이블(11)을 회전시키면서 순수이온수를 공급한다. 드레서(17)를 푸싱 및 회전시키면서 패드(13)의 마이크로홀에 침전된 슬러리 침전물을 배출시킨다. 드레싱 완료후, 드레서(17)를 원위치시킨다.When polishing is completed and the wafer support part 15 is returned to its original position, the dresser 17 is moved to the upper part of the turntable 11, and pure ion water is supplied while the turntable 11 is rotated. The slurry precipitated in the microholes of the pad 13 is discharged while pushing and rotating the dresser 17. After dressing is complete, the dresser 17 is returned to its original position.
이러한 종래의 화학기계연마장치에 있어서, 드레서(17)는 일정한 방향으로 회전운동을 하고, 하부의 패드(13)는 드레서 회전방향과 반대방향으로 회전하면서, 평면을 따라 소정방향으로 위치 이동한다. 이러한 동작을 하는 종래의 드레서 동작에 의하면, 패드의 모를 살리면서 패드 모에 끼어있는 슬러리 찌꺼기나 파티클 등을 효과적으로 제거하지 못하고 있다.In the conventional chemical mechanical polishing apparatus, the dresser 17 rotates in a constant direction, and the lower pad 13 rotates in a direction opposite to the dresser rotation direction, and moves in a predetermined direction along the plane. According to the conventional dresser operation which performs such an operation, it is not effective to remove the slurry residue, the particle, etc. which are stuck in the pad | dye hair while making use of the pad | dye hair.
본 발명은 이러한 문제를 해결하기 위한 것으로, 드레서의 드레싱 과정에서 패드의 모를 살리면서 패드 모에 끼어있는 슬러리 찌꺼기나 파티클 등을 효율적으로 제거할 수 있는 드레서 구동장치를 제공하는 것을 목적으로 한다.An object of the present invention is to provide a dresser drive device capable of efficiently removing slurry residues or particles stuck to a pad wool while keeping the pad hair in the dressing process of the dresser.
도1은 종래의 화학기계연마장치(CMP)의 사시도, 그리고1 is a perspective view of a conventional chemical mechanical polishing apparatus (CMP), and
도2는 본 발명에 따른 스위프 모터를 구비한 드레서 구동장치를 갖는 CMP의 사시도이다.2 is a perspective view of a CMP having a dresser drive with a sweep motor according to the present invention.
-도면의 주요부분에 대한 부호의 설명-Explanation of symbols on the main parts of the drawing
11: 턴테이블13: 패드11: turntable 13: pad
15: 웨이퍼지지부17: 드레서15: wafer support 17: dresser
19: 슬러리공급라인21: 스위프 모터19: slurry supply line 21: sweep motor
이러한 목적을 달성하기 위하여 본 발명은 드레서를 스위프시키는 스위프 모터를 구비하여 회전과 스위프를 동시에 함으로써 드레서의 기능을 향상시킨 CMP 어셈블리를 제공한다.In order to achieve the above object, the present invention provides a CMP assembly having a sweep motor for sweeping the dresser to simultaneously rotate and sweep to improve the function of the dresser.
이하, 첨부 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
도2는 본 발명에 따른 스위프 모터를 구비한 드레서 구동장치를 개략적으로 도시하고 있는 사시도이다. 도2에 도시된 바와같이, 본 발명의 드레서 구동장치는 턴테이블(11), 패드(13), 드레서(17), 스위프 모터(21) 등을 포함한다.Figure 2 is a perspective view schematically showing a dresser drive device having a sweep motor according to the present invention. As shown in Fig. 2, the dresser driving apparatus of the present invention includes a turntable 11, a pad 13, a dresser 17, a sweep motor 21 and the like.
턴테이블(11) 상에 패드(13)가 위치하고, 턴테이블(11) 상으로 이동가능한 웨이퍼지지부(15) 및 드레서(17)가 구비되어 있다. 그리고, 턴테이블(11)의 상부에는 패드(13)의 마이크로홀에 삽입되는 슬러리를 공급하는 슬러리공급라인(19)이 구비되어 있다.The pad 13 is positioned on the turntable 11, and the wafer support 15 and the dresser 17 which are movable on the turntable 11 are provided. In addition, the upper portion of the turntable 11 is provided with a slurry supply line 19 for supplying a slurry inserted into the microhole of the pad 13.
한편, 텐테이블(11)의 상부로 이동가능한 드레서(17)는 패드(13)와 밀착하여 일정한 방향으로 회전하며, 드레서(17)의 일측에 구비된 스위프 모터(21)에 의해 드레서(17)가 턴테이블(11) 상에서 화살표 방향으로 스위프한다.On the other hand, the dresser 17 movable to the upper portion of the ten table 11 is in close contact with the pad 13 and rotates in a predetermined direction, the dresser 17 is driven by the sweep motor 21 provided on one side of the dresser 17. Sweep in the direction of the arrow on the turntable (11).
이러한 구조를 갖는 드레서 구동장치의 작용을 보면, 회전가능한 턴테이블(11) 상에 부착되는 패드(13)의 표면에는 다수의 마이크로홀이 형성되어 있으며, 이들 마이크로홀에는 슬러리 공급라인(19)에서 공급된 연마재 슬러리가 삽입된다. 이 후, 연마재의 웨이퍼지지부(15)의 푸싱 및 회전과, 턴테이블(11) 상의 패드의 회전 및 이동이 이루어진다. 이때, 패드의 마이크로홀 내에 삽입된 슬러리와 웨이퍼지지부(15)에 의해 지지되는 웨이퍼가 마찰하면서 웨이퍼가 연마된다.In view of the action of the dresser drive device having such a structure, a plurality of micro holes are formed on the surface of the pad 13 attached to the rotatable turntable 11, and these micro holes are supplied from the slurry supply line 19. Abrasive slurry is inserted. Thereafter, pushing and rotation of the wafer support 15 of the abrasive and rotation and movement of the pad on the turntable 11 are performed. At this time, the wafer is polished while the slurry inserted into the microhole of the pad and the wafer supported by the wafer support 15 are rubbed.
웨이퍼의 연마가 완료되면, 웨이퍼지지부(15)가 텐테이블(11)에서 이탈하고,드레서(17)가 턴테이블(11) 상으로 이동하여 드레서(17)의 하부면과 패드(13)를 밀착시킨다. 그리고 나서, 턴테이블(11)의 회전 및 이동과 드레서(17)의 회전에 의하여 패드(13) 상의 잔존하는 슬러리찌꺼기 등을 배출시키고 웨이퍼 연마로 깨어진 패드 평탄도를 회복시킨다. 이때, 스위프 모터(21)가 동시에 작동하면서, 드레서(17)를 스위프 운동시킨다. 스위프 모터(21)에 의한 드레서(17)의 스위프 방향을 도2의 화살표 방향으로 직선운동시킬 수 있으나, 이에 한정되지 아니하고 다방향으로 스위프시킬 수 있다. 이와같이 드레서(17)를 스위프시킴으로써, 패드(13)의 표면을 최대한 사용할 수 있으며, 또한 패드(13)의 사용 기간 등을 증가시킬 수 있다.When polishing of the wafer is completed, the wafer support 15 is removed from the tentable 11, and the dresser 17 moves on the turntable 11 to bring the bottom surface of the dresser 17 into close contact with the pad 13. Then, the remaining slurry residues and the like on the pad 13 are discharged by the rotation and movement of the turntable 11 and the rotation of the dresser 17 to recover the pad flatness broken by wafer polishing. At this time, while the sweep motor 21 operates simultaneously, the dresser 17 sweeps. The sweep direction of the dresser 17 by the sweep motor 21 may be linearly moved in the direction of the arrow of FIG. 2, but is not limited thereto and may be swept in multiple directions. By sweeping the dresser 17 in this manner, the surface of the pad 13 can be used to the maximum, and the service life of the pad 13 can be increased.
이상의 구조 및 작용을 갖는 드레서 구동장치에 의하면, CMP의 드레싱 과정에서 패드의 모를 살리면서 패드 모에 끼어있는 슬러리 찌꺼기나 파티클 등을 효율적으로 제거할 수 있다.According to the dresser drive device having the above structure and action, it is possible to efficiently remove slurry residues or particles stuck to the pad wool while keeping the pad hair in the dressing process of the CMP.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020020068432A KR20040040101A (en) | 2002-11-06 | 2002-11-06 | CMP Operating a Dresser with a Sweep Motor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020020068432A KR20040040101A (en) | 2002-11-06 | 2002-11-06 | CMP Operating a Dresser with a Sweep Motor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040040101A true KR20040040101A (en) | 2004-05-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020020068432A Ceased KR20040040101A (en) | 2002-11-06 | 2002-11-06 | CMP Operating a Dresser with a Sweep Motor |
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| Country | Link |
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| KR (1) | KR20040040101A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970046731U (en) * | 1995-12-27 | 1997-07-31 | Flattening device for semiconductor device manufacturing | |
| KR19990041455U (en) * | 1998-05-19 | 1999-12-15 | 김영환 | Final pad conditioning equipment for CMP equipment for semiconductor device manufacturing |
| KR20020044737A (en) * | 2000-12-06 | 2002-06-19 | 윤종용 | Chemical mechanical polisher with conditioning cleaner |
| JP2002200552A (en) * | 2000-10-24 | 2002-07-16 | Ebara Corp | Polishing device |
-
2002
- 2002-11-06 KR KR1020020068432A patent/KR20040040101A/en not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970046731U (en) * | 1995-12-27 | 1997-07-31 | Flattening device for semiconductor device manufacturing | |
| KR19990041455U (en) * | 1998-05-19 | 1999-12-15 | 김영환 | Final pad conditioning equipment for CMP equipment for semiconductor device manufacturing |
| JP2002200552A (en) * | 2000-10-24 | 2002-07-16 | Ebara Corp | Polishing device |
| KR20020044737A (en) * | 2000-12-06 | 2002-06-19 | 윤종용 | Chemical mechanical polisher with conditioning cleaner |
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