KR20030082400A - Workpiece holder for processing apparatus, and processing apparatus using the same - Google Patents

Abstract

There is provided a processing apparatus with a workpiece support in which damage caused by oxygen in the air is prevented and a cheap workpiece support with high reliability. The support may support the workpiece and is disposed within the tubular member having a ceramic body having a heat transfer circuit and an electrode, an end connected to the ceramic body, and the tubular member, and the space in the tubular member is defined by a first end side region (" A sealing member that separates into two sections, a sealing zone ") and an opposite side zone (" opposite zone "), penetrates the sealing member toward the sealed zone side, extends on the opposite zone side, and is electrically connected to the electrode and the heating circuit. And a power supply conducting member.

Description

Workpiece support for processing unit and processing unit using same {WORKPIECE HOLDER FOR PROCESSING APPARATUS, AND PROCESSING APPARATUS USING THE SAME}

The present invention relates to a support (hereinafter referred to as a "workpiece support", or "susceptor") and a processing apparatus using the same for supporting a material such as a wafer to be processed in a processing apparatus such as semiconductor manufacturing apparatuses. It is about. In particular, the present invention relates to a workpiece support having excellent reliability for thermal cycles and a processing apparatus having such a workpiece support.

Up to now, the film formation or etching process in the manufacturing steps of semiconductor devices has been performed on a workpiece, that is, a semiconductor substrate. The processing apparatus for processing such a substrate includes a susceptor that is a support for holding a semiconductor substrate during the processing.

The conventional susceptor described above is disclosed, for example, in Japanese Laid-Open Patent Publication No. 7-153706.

However, the conventional susceptor described above has such problems as described below. That is, in order to supply inert gas into the support table, a gas supply line must be provided for the susceptor, and instruments necessary for supplying inert gas, such as a mass flow controller, must be connected to the gas supply line. As a result, the structure of the susceptor becomes complicated, and as a result, the manufacturing cost of the susceptor used as the workpiece support is increased.

In addition, when this susceptor is used, the drive ratio of the susceptor is also increased because inert gas must always be supplied in the support table.

It is an object of the present invention to provide a highly reliable and inexpensive workpiece support that can be obtained by avoiding damage caused by the reactant gas and a processing apparatus having such a workpiece support.

The workpiece support of the present invention comprises a ceramic body capable of supporting the workpiece with an electrical circuit, a tubular member having an end ("first end") fixed to the back side of the ceramic body, disposed in and within the tubular member. A sealing member which is bonded and which separates the space in the tubular member into two zones, a zone on the first end side ("sealed zone") and an zone on the opposite side ("counting zone"), and an electrical circuit of the ceramic body electrically. And a power supply conducting member that is connected and penetrates the sealing member toward the sealed zone side and extends on the opposite zone side.

The processing apparatus of the present invention includes the workpiece support described above.

Susceptors used in semiconductor manufacturing devices have been required to withstand stringent processing conditions, such as etching on semiconductor substrates, and susceptors have also been required to be inexpensive. When the workpiece support of the present invention is used, an inexpensive susceptor capable of reliably resisting stringent processing conditions can be obtained for use in a semiconductor manufacturing apparatus.

In the workpiece support according to the present invention, the sealing member is disposed in and adhered to the tubular member supporting the ceramic body, so that the connection where the electric circuit for the ceramic body is connected to the power supply conducting member can be isolated from the atmosphere around the workpiece support. have. Therefore, the workpiece support of the present invention is used to treat workpieces such as substrates, and the connections can be prevented from being damaged by oxygen contained in the air present in the tubular member. Therefore, it is unnecessary to supply an inert gas into the space in the tubular member as described above to avoid such damage. This results in a reduction in the cost of the workpiece support.

1 is a schematic cross-sectional view of a workpiece support used in a processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a schematic enlarged cross sectional view showing a portion of the workpiece support shown in FIG. 1; FIG.

3 is a schematic enlarged cross sectional view showing a portion different from that shown in FIG. 2 of the workpiece support shown in FIG.

4 is a schematic cross-sectional view of a workpiece support according to a second embodiment of the present invention.

5 is a schematic cross-sectional view of a workpiece support according to a third embodiment of the present invention.

6 is a schematic cross-sectional view of a workpiece support according to a fourth embodiment of the present invention.

FIG. 7 is a schematic cross sectional view showing a portion of the support shown in FIG. 6; FIG.

8 is a schematic cross-sectional view showing a first modification of the workpiece support shown in FIGS. 6 and 7 according to the fourth embodiment of the present invention.

FIG. 9 is a schematic cross sectional view showing a portion of the workpiece support shown in FIG. 8; FIG.

Fig. 10 is a schematic sectional view showing a second modification of the workpiece support shown in Figs. 6 and 7 according to the fourth embodiment of the present invention.

FIG. 11 is a schematic cross sectional view showing a portion of the workpiece support shown in FIG. 10; FIG.

12 is a schematic cross sectional view of a sample used to determine airtightness.

Figure 13 is a schematic cross sectional view of a sample used to determine airtightness.

14 is a schematic cross sectional view of a sample used to determine airtightness.

<Explanation of symbols for the main parts of the drawings>

1: support

2: ceramic body

4: electrode

5: electric heating circuit

6: tubular member

8: Terminal side electrode wire

21: sealing member

The workpiece support according to the first aspect of the present invention is a ceramic body used to support a workpiece and having an electrical circuit, a tubular member having an end ("first end") bonded to the ceramic body, disposed in and within the tubular member. Sealing member that bonds and separates the space in the tubular member into two zones: a zone on the first end side ("sealed zone") and a zone on the opposite side ("counting zone"), from the opposite zone side to the sealed zone side. And a power supply conducting member that extends and penetrates the sealing member and electrically connects to the electrical circuit.

The electrical circuit of the ceramic body includes, for example, a heating circuit for heating the workpiece, an electrostatic electrode for holding the workpiece in the ceramic body, or an RF electrode for generating a plasma. The material for forming this electrical circuit may be low oxide-resistance tungsten or molybdenum or the like. In addition, materials with low acid resistance are also used in many cases for power supply terminals used in the connections between electrical circuits and power supply conducting members. Thus, if the connection between the power supply conducting member and the electrical circuit or power supply terminal is in air, the electrical circuit exposed to the tubular member is present in the air when the workpiece support is heated and the semiconductor substrate or the like is disposed and etched thereon. It may be corroded by oxygen.

However, according to the present invention, the connection between the power supply conducting member and the electric circuit for the ceramic body is disposed in the sealing member, the tubular member, the region surrounded by the ceramic body (ie, the sealed region described above). If the bonding region between the tubular member and the ceramic body and the bonding portion between the sealing member and the ceramic body are formed to have a certain airtightness, the portion (sealing portion) in which the above-described connection portion is disposed is a space surrounding the sealing portion in the tubular member ( Then abbreviated as "peripheral zone". As a result, when a heat treatment such as etching is performed, it is possible to prevent the material or electrical circuit forming the connection from being corroded by oxygen present in the atmosphere in the tubular member.

In addition, since the sealing member is disposed in the tubular member such that the sealed region is isolated from the surrounding region by this, as described above, it is not necessary to provide piping for supplying inert gas into the tubular member as has been done in conventional apparatus. Thus, the configuration of the workpiece support can be simple, and therefore the manufacturing cost thereof can be reduced. In addition, when the workpiece is processed using the workpiece support (by etching or the like), it is unnecessary to continuously supply the inert gas into the tubular member, and therefore the driving ratio of the processing using the workpiece support described above can be reduced. .

In addition, by selecting a material having a suitable coefficient of thermal expansion not so different from each other for the power supply conducting member, the sealing member, the tubular member, and the ceramic body constituting the workpiece support, localization of the thermal stress due to a change in the ambient temperature is achieved. It is possible to avoid problems like concentration. Thus, a workpiece support with high reliability for thermal hysteresis due to thermal cycles can be obtained.

In the workpiece support according to the first aspect of the present invention, the sealing member is preferably provided in contact with the back side of the ceramic body (opposite side on which the wafer is mounted). Further, in the workpiece support according to the first aspect of the present invention, the sealing member may be adhered to the surface of the ceramic body with a fixed adhesive member provided therebetween.

In that case, since the ceramic body can support the sealing member, it is unnecessary for the sealing member itself to have a large force. Thus, the thickness of the sealing member can be reduced. Therefore, the degree of freedom for designing the sealing member becomes larger.

In the workpiece support according to the first aspect of the present invention, the fixed adhesive member may be formed by heating the fixed adhesive material at a pressure of 100 g / cm ² or more applied thereto through the sealing member.

Thus, the number of fine gaps can be reduced in the fixed adhesive member, and thus an adhesive portion having excellent airtightness can be obtained. Also, the adhesive strength between the ceramic body and the sealing member can be increased at the same time. The reason why the pressure applied to the stationary adhesive member is set to 100 g / cm ² or more is that the airtightness of the stationary adhesive member can be increased when the pressure is 100 g / cm ^{2 or} more, and when the pressure is less than 100 g / cm ² , This cannot be obtained.

In the workpiece support according to the first aspect of the present invention, the sealing member may be disposed at a distance from the surface of the ceramic body.

In this case, since the sealing member is not in contact with the ceramic body, the temperature distribution of the ceramic body due to the contact of the sealing member and the ceramic body can be prevented from being uneven due to the contact with the sealing member. As a result, the temperature distribution in the ceramic body can be made more constant, so that the temperature distribution in the workpiece supported on the ceramic body can be easily made constant.

In the workpiece support according to the first aspect of the present invention, the region surrounded by the sealing member, the tubular member and the ceramic body may be a vacuum or a non-oxidizing atmosphere.

In this case, oxidation of the power supply conduction members and the connection between the electric circuit and the power supply conduction member in the zone can be effectively prevented.

In the workpiece support according to the first aspect of the present invention, the amount of helium leak from the region (sealed region) enclosed by the sealing member, the tubular member and the ceramic body to another region may be 10 ⁻⁸ Pa · m ³ / s or less. .

In this case, when the helium leak amount in the sealed zone is set to a value within the above-mentioned range, oxidation of the power supply conductive member and the connection between the power supply conductive member and the electric circuit disposed in the zone can be prevented without fail.

The workpiece support according to the first aspect of the invention may also comprise an adhesive member provided on the adhesive portion between the tubular member and the sealing member.

In this case, the gap at the adhesive portion between the tubular member and the sealing member can be filled with the adhesive member. As a result, the airtightness of the above-mentioned adhesive portion can be improved. Thus, the first zone in the tubular member can be reliably isolated from the outer zone surrounding the workpiece support.

In the workpiece support according to the first aspect of the present invention, the adhesive member may have a surface extending over a portion of the surface of the sealing member at a portion of the inner surface of the tubular member, wherein the surface of the adhesive member is preferably concave meniscus. to be.

It is understood that the adhesive member has a good wettability on the surfaces of the sealing member and the tubular member when the adhesive member has the above-described shape (so-called meniscus). That is, the adhesive portion has high airtightness when the adhesive member has such concave meniscus. As a result, the occurrence of leaks in the bond can be reliably suppressed.

The workpiece support according to the second aspect of the present invention is a ceramic body used to support a workpiece and having an electrical circuit, a tubular member having an end fixed to the back of the ceramic body, and an electrical circuit connected to the electrical circuit at a connection disposed in the tubular member. A power supply conducting member connected in the form of a tubular member and arranged in the tubular member to form a seal surrounding each connecting portion so as to isolate the sealed portion of the connecting portion from the atmosphere surrounding the outer circumference of the sealing member. And a sealing member to be fixed.

Thus, the connection portion between the power supply conducting member and the electrical circuit of the ceramic body is disposed in the area surrounded by the sealing member and the ceramic body, respectively. When the bonding region between the ceramic body and the sealing member is formed to have a certain airtightness, the region where the connecting portion is disposed is isolated in the space surrounding the sealing member. As a result, when a heat treatment such as etching is performed, it is possible to prevent the occurrence of a problem that the material or electric circuit forming the connection is corroded by oxygen in the air present in the tubular member.

In addition, since the sealing member is disposed in the tubular member and the above-described connecting portion is isolated in the region surrounding the sealing member, it is unnecessary to install a pipe for supplying inert gas into the tubular member. Thus, the structure of the workpiece support can be simplified, and thus the manufacturing cost thereof can be reduced. In addition, when the workpiece is processed (etched, etc.) using the workpiece support, there is no need to supply an inert gas into the tubular member, and therefore the driving ratio of the processing using the workpiece support can be reduced.

In addition, by selecting materials having thermal expansion coefficients that are not so different from each other for the power supply conducting member, the sealing member, the tubular member, and the ceramic body constituting the workpiece support, the local concentration of the thermal stress by the change in the ambient temperature It is possible to avoid such problems. Thus, a workpiece support having high reliability for thermal history such as thermal cycle can be obtained.

Further, as described above, since the sealing member is provided for the individual connection between the electric circuit and the power supply conducting member, the dimension of each sealing member can be reduced. Thus, the cost of the sealing member can be reduced. Also, since the area where the sealing member contacts the ceramic body is reduced, the influence of the sealing member due to temperature distribution in the ceramic body can be reduced. As a result, the temperature distribution in the ceramic body can be made more constant, so that the temperature distribution in the workpieces supported by the ceramic body can be easily made constant.

In the workpiece support according to the second aspect of the invention, the atmosphere surrounding the area in which the connection between the electrical circuit and the power supply conducting member is disposed is preferably a vacuum or non-oxidizing atmosphere.

In this case, the oxidation of the power supply conduction member and the connection between the electric circuit and the power supply conduction member can be effectively prevented.

In the workpiece support according to the second aspect of the present invention, the amount of helium leak in the zone in which the connection portion is disposed in another zone is preferably 10 ⁻⁸ Pa · m ³ / s or less.

In this case, when the helium leak amount in the above-described zone is set as described above, oxidation of the connection between the electric circuit and the power supply conduction member and the power supply conduction member can be reliably suppressed.

The workpiece support according to the second aspect of the present invention may also include an adhesive member provided on the adhesive portion between the ceramic body and the sealing member.

In this case, in the adhesive portion between the ceramic body and the sealing member, the gap between them can be filled with the adhesive member. As a result, the airtightness of the above-mentioned adhesive portion can be improved. Thus, the area in which the connection between the electric circuit and the power supply conducting member is disposed can be reliably isolated in the area surrounding the sealing member.

In the workpiece support according to the first or second aspect of the present invention, the adhesive member may be formed by heat treatment of the adhesive material at a pressure of 100 g / cm ² or more applied thereto through the sealing member.

In this case, since the number of fine gaps can be reduced in the adhesive member, an adhesive portion having excellent airtightness can be obtained. Thus, the amount of helium leak from the region enclosed by the sealing member, the tubular member and the ceramic body to another region in which the connection between the electric circuit and the power supply conducting member is disposed can be reduced (that is, the airtightness can be improved. In addition, the adhesive strength of the adhesive portion between the tubular member and the sealing member or the adhesive strength of the adhesive portion between the ceramic body and the sealing member can be increased. Therefore, a more reliable adhesive portion can be obtained. The reason for setting the pressure applied to the adhesive material to 100g / cm ² or more is when the pressure is more than 100g / cm ² helium leakage amount is may be reduced, and can be helium leakage amount is substantially reduced when the pressure is less than 100g / cm ² Because there is not.

Also in this case, the adhesive may comprise glass. This adhesive comprising glass may be preformed by precombustion in a shape approximately similar to the adhesive member. As a result, the adhesive material thus pretreated may be disposed at a predetermined position or treated by heat treatment. Therefore, adhesion and sealing can be easily made at the bonding portion.

In the workpiece support according to the second aspect of the present invention, the adhesive member may have a surface extending over a portion of the surface of the sealing member at a portion of the back side of the ceramic body, wherein the surface of the adhesive member is preferably concave meniscus. to be.

In the above case, when the adhesive member forms a so-called meniscus shape as described above, it is understood that the adhesive member has good wettability on the surface of the ceramic body and the sealing member. That is, when the adhesive member has a concave meniscus, the adhesive portion has high airtightness. As a result, the occurrence of leaks in the adhesive portion can be reliably prevented.

In the workpiece support according to the first or second aspect of the invention, the adhesive member may comprise glass.

When a ceramic material is used for the adhesive member, the heat treatment temperature is increased to 1,500 ° C or more in the process of forming the adhesive member at the adhesive portion. In this process, when the sealing member and the power supply conducting member are previously bonded together, a material capable of withstanding high temperatures of 1500 ° C or higher should be used to form this power supply conducting member. Therefore, the kind of material that can be used to form the power supply conducting member is very limited.

In contrast, when glass is used for the adhesive member, the heat treatment temperature for forming the adhesive member at the adhesive portion can be reduced to a relatively low temperature. (About 1000 ° C. or less) Thus, the freedom to select a material for the power supply conductive member can be increased.

In the case where the sealing member or tubular member is formed of ceramic, if the metal brazing material is used as a typical adhesive member, the thermal stress caused by thermal cycles or the like concentrates on the bonding portion because the ceramic has a smaller coefficient of thermal expansion than the metal brazing material. May be As a result, the bond may be damaged by thermal stress in some cases. In contrast, the coefficient of thermal expansion of glass is relatively lower than that of metal brazing materials and the like. Therefore, when an appropriate kind of glass for the adhesive member is selected, the coefficient of thermal expansion of the adhesive member can be made approximately equal to the ceramic forming the tubular member or the like. As a result, concentration of thermal stress at the adhesive portion can be suppressed. As a result, breakage of the adhesive portion caused by thermal stress can be suppressed, whereby a workpiece support with high reliability can be obtained.

The workpiece support according to the first or second aspect of the invention may comprise another adhesive member provided, and the portion for adhering the sealing member and the power supply conducting member may have an additional adhesive member provided therebetween. . The additional adhesive member may have a surface extending from a portion of the surface of the sealing member to a portion of the surface of the power supply conducting member, wherein the surface of the adhesive member is a concave meniscus.

When the additional adhesive member forms the meniscus shape as described above, it is understood that the adhesive member has good wettability on the surfaces of the sealing member and the power supply conductive member. That is, when the additional adhesive member has such a meniscus shape as described above, the adhesive portion between the sealing member and the power supply conducting member has a high airtightness. As a result, the occurrence of leaks in the adhesive portion can be effectively prevented.

In the workpiece support according to the first or second aspect of the invention, the additional adhesive member may comprise glass.

In this case, when the glass for the adhesive material is used for the additional adhesive member, the heat treatment for forming the adhesive member at the adhesive portion between the sealing member and the power supply conducting member can be performed at a relatively low temperature (about 1000 ° C. or less). have. Thus, greater freedom for selecting the material for forming the power supply conducting member can be obtained.

In the workpiece support according to the first or second aspect of the invention, the glass may be ZnO—SiO ₂ —B ₂ O ₃ —based glass.

ZnO-SiO ₂ -B ₂ O ₃ -based glass has the same coefficient of thermal expansion as ceramics, and such glass has good wettability for sealing and tubular members made of ceramics. Therefore, when the ZnO-SiO ₂ -B ₂ O ₃ -based glass is used as the adhesive member, the airtightness and reliability of the adhesive portion can be improved.

In the workpiece support according to the first or second aspect of the invention, the sealing member may comprise a material equivalent to forming a tubular member.

In this case, the sealing member and the tubular member may be formed of a material having the same coefficient of thermal expansion as each other. Therefore, in the bonding portion between the sealing member and the tubular member, concentration of thermal stress caused by the difference in the coefficient of thermal expansion of the material forming the sealing member and the tubular member can be suppressed. Therefore, the reliability of the above-described adhesive portion can be improved.

In the workpiece support according to the first or second aspect of the present invention, the sealing member may comprise a material equivalent to forming a ceramic body.

In this case, the sealing member and the ceramic body can be formed of a material having the same thermal expansion coefficient as each other. Therefore, in the bonding portion between the sealing member and the ceramic body, concentration of thermal stress caused by the difference in the coefficient of thermal expansion of the material forming the sealing member and the ceramic body can be suppressed. Therefore, the reliability of the above-described adhesive portion can be improved.

In the workpiece support according to the first or second aspect of the present invention, the ceramic body may comprise aluminum nitride.

Aluminum nitride has high corrosion resistance to halogenated gases used to treat semiconductor substrates. In addition, the particle generation rate of the ceramic body made of aluminum nitride is smaller than the particle generation rate of a material different from that of aluminum nitride. In addition, since the thermal conductivity of aluminum nitride is relatively high, the temperature distribution of the surface of the ceramic body (surface on which a workpiece such as a semiconductor substrate is mounted) can be made constant.

In the workpiece support according to the first or second aspect of the invention, the power supply conducting member may comprise an iron-nickel-cobalt alloy.

The difference in coefficient of thermal expansion between the iron-nickel-cobalt alloy and the ceramic described above is relatively small. Thus, when an adhesive portion between the power supply conductive member and the sealing member is formed and the workpiece support is subjected to a heat cycle, it is possible to reduce the thermal stresses generated at the adhesive portion between the power supply conductive member and the sealing member.

In addition, the aforementioned iron-nickel-cobalt alloy has superior wettability compared to the glass used as the adhesive member. Thus, the reliability of the adhesive portion between the power supply conducting member and the sealing member can be improved.

In the workpiece support according to the first or second aspect of the invention, the power supply conducting member may comprise a base material and a coating layer. The base material may comprise at least one selected from the group consisting of tungsten, molybdenum and alloys thereof. The coating layer may be formed on the surface of the base material and may include at least one of nickel and gold. In addition, the coating layer may be a plating layer containing at least one of nickel and gold.

In this case, the acid resistance of the metal such as tungsten forming the base material is not particularly excellent, but the acid resistance of the power supply conductive member can be improved by attaching a coating layer containing nickel or gold thereon. In addition, the material which forms the base material mentioned above is a metal which has a relatively low coefficient of thermal expansion. Thus, when heat is applied to the bonding portion in the process of bonding the power supply conducting member and the sealing member together, for example, the thermal stress generated thereby can be reduced.

The processing apparatus according to the third aspect of the invention comprises a workpiece support according to the first or second aspect of the invention.

By using a highly reliable workpiece support manufactured at a relatively reasonable cost as described above, it is possible to manufacture a highly reliable processing apparatus in which processing of a workpiece such as a substrate can be performed at low cost.

Susceptors for use in semiconductor manufacturing apparatus have been required to be manufactured at moderate cost and also able to withstand stringent conditions as in the case of etching treatments for semiconductor substrates. The workpiece support of the present invention can be assembled inexpensively and can withstand stringent working conditions for use in semiconductor manufacturing devices.

Example

In the following, embodiments of the present invention will be described with reference to the drawings. In the drawings shown below, the same or equivalent components are designated by the same reference numerals and the description will not be repeated.

First embodiment

1 is a schematic cross-sectional view showing a workpiece support used in the processing apparatus according to the first embodiment of the present invention. FIG. 2 is a schematic enlarged cross-sectional view showing a portion of the workpiece support shown in FIG. 1. FIG. 3 is a schematic enlarged cross-sectional view showing a portion different from that shown in FIG. 2 of the support shown in FIG. 1 to 3, a support according to a first embodiment of the present invention is described.

As shown in Figs. 1 to 3, the support 1, which is a susceptor disposed in the chamber of the processing apparatus, has a ceramic body 2 and a tubular member 6 adhered to the ceramic body 2 on the rear side thereof. Include. The tubular member 6 is made of ceramic. The support 1 is adhered to the wall surface (not shown) of the chamber at the bottom of the tubular member 6. As the processing apparatus, for example, a semiconductor manufacturing apparatus such as an etching apparatus or a film forming apparatus used in the step of manufacturing a semiconductor substrate may be mentioned.

The ceramic body 2 supports a workpiece such as a semiconductor substrate on its surface. The ceramic body 2 includes an electric circuit including a body base 3 and an electrode 4 made of ceramic and a heat transfer circuit 5 fitted to the body base 3. The electrode 4 may be an electrostatic chuck electrode for supporting a workpiece such as a substrate on the surface of the ceramic body 2 or plasma generation (radio frequency (RF)) used to generate a plasma for processing the substrate. It may be an electrode. In addition, both the electrostatic chuck electrode and the plasma generating electrode may be formed in the ceramic body 2.

The power supply terminals 7a to 7c are connected to the heating circuit 5 and the electrical circuit of the electrode 4. These power supply terminals 7a to 7c are made of a conductive material such as metal, and are sandwiched in the ceramic body 2. One end of each power supply terminal 7a to 7c is exposed to the surface of the ceramic body 2 in the tubular member 6. The terminal side electrode wire 8 used as the power supply conducting member is arranged to contact these corresponding power supply terminals 7a to 7c. The terminal side electrode line 8 is disposed inside the tubular member 6. The terminal side electrode line 8 is connected to the corresponding power side electrode line 9 at the connecting portion 10 with gold (Au) brazing material 17. Nickel may be used as the material for the power side electrode line 9. In addition to nickel, an electrically conductive material having acid resistance can be used as the material for the power side electrode line 9. The screw-in structure may be used as a joint structure between the terminal side electrode line 8 and the power side electrode line 9. For example, the screw portion may be formed at the end of the terminal side electrode line 8, the screw hole into which the screw portion is inserted and fixed may be formed at the end of the power side electrode line 9, and the end thereof is the terminal side electrode line ( 8). Thereafter, the terminal side electrode line 8 and the corresponding power side electrode line 9 may be connected and fixed together by inserting the screw portion into the screw hole and fixing them together.

As shown in Fig. 2, in the connecting portion 10 between the terminal side electrode line 8 and the power side electrode line 9, an end opening 15 is formed at the end of the power side electrode line 9. The end of the terminal side electrode wire 8 (the end opposite to the end connected to the power supply terminals 7a to 7c) is inserted into these corresponding end openings 15, and in the above state, the gold brazing material 17 It is filled in the end opening 15.

In addition, in the tubular member 6, the sealing member 11 made of ceramic is exposed to the area disposed on the connection portion 10 between the terminal side electrode line 8 and the power side electrode line 9. The shape of the sealing member 11 in plan view substantially coincides with the inner circumference of the tubular member in the vertical direction in which the tubular member 6 extends. In addition, the plurality of openings 12 are formed in the sealing member 11. The terminal side electrode line 8 is exposed through these openings 12.

The terminal side electrode wire 8 and the sealing member 11 are fixed together to the openings 12 with an additional adhesive member using the glass 13. The glass 13 functions as a sealing material for filling the openings 12 which are adhesive parts, and thus a sealed area surrounded by the tubular member 6, the sealing member 11 and the ceramic body 2 (tubular member 6 The space at the first end side in) is isolated by the sealing member from the other zone (the outer space surrounding the circumference of the support 1 and the opposing zone opposed to the sealed zone in the tubular member 6). In addition, the sealing member 11 and the tubular member 6 are adhered to and fixed to each other by the glass 13 serving as an adhesive member. As a result, the sealing member 11 can isolate the sealed zone in the tubular member 6 in an opposite zone in the cylinder member opposite the sealed zone. In addition, the terminal side electrode wire 8 used as the power supply conducting member penetrates the sealing member 11 through the openings 12 and extends from the opposite zone to the sealed region in the tubular member 6, and the power supply terminal. It is connected to the electrode 4 and the heat exchanger circuit 5 via 7a-7c.

The glass 13 disposed at the bonding portion between the sealing member 11 and the terminal side electrode wire 8 and the glass 13 disposed at the bonding portion between the sealing member 11 and the tubular member 6 are provided with a meniscus portion ( 14). The meniscus part 14 mentioned above is formed when the wettability of the glass 13 with respect to the surface of the sealing member 11, the terminal side electrode wire 8, and the tubular member 6 is excellent. When the meniscus portion 14 is formed as described above, the adhesive portion exhibits high reliability and tends not to leak.

The glass 13 disposed at the bonding portion between the sealing member 11 and the terminal side electrode wire 8 and the glass 13 disposed at the bonding portion between the sealing member 11 and the tubular member 6 are sealed members 11. It may be formed by performing a heat treatment while a pressure of 100 g / cm ² or more is applied to the glass 13 through. According to such a treatment, the number of fine gaps can be reduced in the glass 13. Therefore, in addition to the improvement in airtightness, the adhesive strength of the adhesive part including the glass 13 can be improved.

A material having low acid resistance, such as tungsten or molybdenum, is used as the material for forming the heat transfer circuit 5 or the electrode 4. Similarly, power supply terminals 7a to 7c are made of a material having low acid resistance in some cases. In the support body 1 of this invention, the connection part between the electric power supply terminal, such as the heat transfer circuit 5 of the ceramic body 2, and the terminal side electrode wire 8, the sealing member 11, the tubular member 6, and the ceramic body It is arranged in a sealed area (zone on the first end side of the tubular member) surrounded by (2). Thus, the bonding zone between the tubular member 6 and the ceramic body 2, the bonding zone between the tubular member 6 and the sealing member 11, and the bonding zone between the sealing member 11 and the terminal side electrode wire 8. If formed to have a certain airtightness, the zone in which the connection between the power supply terminal 7 and the terminal side electrode line 8 for the heating circuit 5 or the like is disposed is an atmosphere surrounding the support 1 (another zone). Is isolated). Therefore, when a process such as etching is performed, the power supply terminal 7 and the connecting portion for the electrode 4 and the heat circuit 5 may be corroded by the reactant gas present in the atmosphere around the support 1. .

Furthermore, since the sealing member 11 is arranged in the tubular member 6 such that the above-mentioned first zone, that is, the zone of the tubular member 6 on the first end side, is isolated in a different zone from the above-described first zone, Piping for supplying inert gas into the tubular member 6 which has been performed in the past is unnecessary. Since the construction of the support 1 can be simplified compared to the past, the manufacturing cost can be reduced. In addition, when the semiconductor substrate, i.e., the workpiece, is processed using the support 1, it is unnecessary to continuously supply the inert gas into the tubular member 6, and therefore the driving ratio can be reduced by using the support 1. Can be.

In addition, the occurrence of problems such as local concentration of thermal stress caused by a change in the ambient temperature is caused by the terminal-side electrode wire 8, the sealing member, in which a suitable material having a coefficient of thermal expansion not different from each other forms the support 1. (11), it can be suppressed if it is selected as a material for the tubular member 6 and the ceramic body 2. Thus, the support 1 having high reliability for the thermal history due to the heat cycle can be obtained.

In the support 1 shown in Figs. 1 to 3, since the sealing member 11 is disposed at a distance from the surface of the ceramic body 2, the sealing member 11 does not contact with it. As a result, it is possible to prevent the occurrence of a problem that the temperature distribution in the ceramic body 2 becomes uneven because of the sealing member 11 in contact with the ceramic body 2. As a result, the uniformity of temperature distribution in the ceramic body 2 can also be improved.

Since the glass 13 used as the adhesive member is provided in the bonding portion between the tubular member 6 and the sealing member 11, the gap between the sealing member 11 and the tubular member 6 can be filled with the glass 13. have. As a result, the airtightness of the above-mentioned adhesive portion can be improved.

In addition, since the coefficient of thermal expansion of the glass 13 is relatively lower than that of a gold brazing material or the like, the coefficient of thermal expansion of the glass 13 is the tubular member 6 if the appropriate type of glass 13 for the adhesive member is selected from among the various materials. It may be prepared in substantially the same manner as the ceramic forming the. As a result, concentration of thermal stress at the adhesive portion can be suppressed.

As shown in Fig. 3, the glass 13 has a surface extending from a portion of the surface of the tubular member 6 to a portion of the surface of the sealing member 11, and the glass has a concave cross-sectional shape (so-called meniscus). Part 14 is formed). The meniscus portion 14 described above is formed when the glass 13 has good wettability with respect to the surfaces of the tubular member 6 and the sealing member 11. That is, when the adhesive member has a concave meniscus, the adhesive portion has high airtightness.

In addition, in the support 1 shown in Figs. 1 to 3, the glass 13 is provided as an additional adhesive member at the adhesive portion between the sealing member 11 and the terminal side electrode wire 8. As shown in Fig. 2, the glass 13 has a surface extending from a portion of the surface of the sealing member 11 to a portion of the surface of the terminal side electrode line 8, and the surface of the glass 13 is concave meniscus. (The meniscus portion 14 is formed). When the meniscus portion 14 described above is formed on the surface of the glass 13, it is understood that the glass 13 has good wettability on the surfaces of the sealing member 11 and the terminal side electrode wire 8. That is, when the meniscus portion 14 described above is formed, the adhesive portion between the sealing member 11 and the terminal side electrode wire 8 has high airtightness. In addition, when the glass 13 is used as the another adhesive member, the heat treatment step of providing the glass 13 at the adhesive portion between the sealing member 11 and the terminal side electrode wire 8 is performed at a relatively low temperature (about 1,000 or less). ) May be performed. As a result, the degree of freedom in selecting the material forming the terminal side electrode line 8 can be made larger.

As the glass 13, ZnO—SiO ₂ —B ₂ O ₃ —based glass may be used. The ZnO-SiO ₂ -B ₂ O ₃ -based glass has excellent wettability with respect to the sealing member 11 and the tubular member 6 made of ceramic and has the same coefficient of thermal expansion as the ceramic. Therefore, if such ZnO-SiO ₂ -B ₂ O ₃ -based glass is used as the glass 13, the airtightness and reliability of the bonding portion can be improved.

In addition, the material for forming the sealing member 11 may include a material equivalent to that for forming the tubular member 6. When the material is thus selected, the sealing member 11 may be formed of a material having a coefficient of thermal expansion approximately equal to that of the tubular member 6. Therefore, it is possible to prevent the thermal stress from concentrating on the bonding portion between the sealing member 11 and the tubular member 6 due to the difference in coefficient of thermal expansion between the materials of the sealing member 11 and the tubular member 6. .

The material for forming the sealing member 11 may include a material equivalent to the body base 3 for forming the ceramic body 2.

In the case described above, the sealing member 11 and the ceramic body 2 may be formed of a material having a coefficient of thermal expansion approximately equal to each other. Thus, when the sealing member 11 and the ceramic body 2 are directly bonded together as in the case of the support body 1 described later in the third embodiment of the present invention, the material of the sealing member 11 and the ceramic body 2 is It is possible to prevent the thermal stress from concentrating on the bonding part due to the difference in coefficient of thermal expansion between them.

The material for the body base 3 forming the ceramic body 2 may comprise aluminum nitride. Aluminum nitride has high corrosion resistance to halogenated gases used to treat semiconductor substrates. In addition, the ceramic body 2 containing aluminum nitride exhibits a low particle generation rate as compared with the ceramic body including other materials. In addition, since the thermal conductivity of aluminum nitride is relatively high, the temperature distribution of the surface of the ceramic body 2 (the surface on which the workpiece such as the semiconductor substrate is mounted) can be made constant.

In addition, the area enclosed by the sealing member 11, the tubular member 6, and the ceramic body 2 is preferably in a vacuum or non-oxidized state. In this case, the oxidation is effectively suppressed from occurring at the connection between the power supply terminal for the electrode 4 or the heating circuit 5 and the terminal side electrode line 8 or the terminal side electrode line 8 disposed in the above-mentioned zone. Can be.

An iron-nickel-cobalt alloy may be used as the material for forming the terminal side electrode line 8. In this case, the coefficient of thermal expansion of the iron-nickel-cobalt alloy is not so different from that of ceramics. Therefore, the thermal stress generated at the bonding portion between the terminal side electrode wire 8 and the sealing member 11 is formed between the sealing member 11 made of ceramic and the terminal side electrode wire 8, and the support 1 is formed. Can be suppressed when subjected to a heat cycle. In addition, the aforementioned iron-nickel-cobalt alloy has superior wettability compared to the glass used as the adhesive member. Therefore, the reliability of the bonding portion between the terminal side electrode wire 8 and the sealing member 11 can be improved.

The terminal side electrode wire 8 used as the power supply conducting member functions as a coating layer containing at least one of nickel and gold, and includes at least one selected from the group consisting of a plating layer formed on a base material and tungsten, molybdenum and an alloy thereof. The base material may be included. In this case, the difference in the coefficient of thermal expansion between the above-mentioned metal and ceramic forming the base material is relatively small. Thus, when an adhesive portion is formed between the terminal side electrode line 8 and the sealing member 11, it is caused at the adhesive portion, caused by a difference in the coefficient of thermal expansion between the terminal side electrode line 8 and the sealing member 11. The concentration of thermal stress can be suppressed.

The amount of helium leak from the sealed region surrounded by the sealing member 11, the tubular member 6 and the ceramic body 2 to the other region is preferably 10 ⁻⁸ Pa · m ³ / s or less. In this case, oxidation of the terminal side electrode line 8 and the connection between the power supply terminal and the terminal side electrode line 8 for the electrode 4 and the heating circuit 5 arranged in the sealed area can be reliably suppressed. have.

When the support 1 shown in Figs. 1 to 3 is applied to a processing apparatus for processing a semiconductor substrate, the semiconductor substrate can be processed at low cost, and in addition, a processing apparatus with high reliability can be realized.

Second embodiment

4 is a schematic cross-sectional view of a support according to a second embodiment of the present invention. Referring to Fig. 4, a support according to a second embodiment of the present invention is described.

As shown in Fig. 4, the support 1 of this embodiment has basically the same configuration as shown in Figs. 1 to 3, but the projection 18 for defining the position of the sealing member 11 is provided with a tubular member 6. Is formed on the inner wall. While the end of the sealing member 11 is pressed against this protrusion 18, the tubular member 6 and the sealing member 11 are bonded and fixed together with the glass 13 provided therebetween.

According to the above-described configuration, the same advantages as the support 1 shown in Figs. 1 to 3 can be obtained, and at the same time, the tubular member 6 and the sealing member 11 are opposed to each other by the presence of the protrusion 18. Zones can be increased. Thus, the reliability of the adhesive portion between the tubular member 6 and the sealing member 11 can be increased. As a result, the leak generation amount can be effectively reduced.

Third embodiment

5 is a schematic cross-sectional view of a support according to a third embodiment of the present invention. Referring to Fig. 5, a support according to a third embodiment of the present invention is described.

As shown in Fig. 5, the support 1 of this embodiment has basically the same configuration as that shown in Figs. 1 to 3, but the position where the sealing member 11 is disposed is different. That is, the sealing member 11 is arrange | positioned in the tubular member 6 so that it may be in intimate contact with the back surface of the ceramic body 2.

Moreover, the sealing member 11 arrange | positioned in this way is fixed to the terminal side electrode line 8 and the tubular member 6 with the glass 13.

According to the above-described configuration, the same advantages as those of the support 1 shown in Figs. 1 to 3 can be obtained, and at the same time the sealing member 11 is in contact with the rear surface of the ceramic body 2 so that the ceramic body 2 is sealed. The member 11 can be accommodated. As a result, the thickness of the sealing member 11 can be reduced. Therefore, the degree of freedom for designing the sealing member 11 becomes larger.

Also, in the case described above, the ceramic body 2 and the sealing member 11 may be adhered to each other by providing a glass serving as a fixed adhesive member between the ceramic body 2 and the sealing member 11. In addition, the same advantages as the support 1 shown in Fig. 4 can be obtained. In addition, the glass provided between the ceramic body 2 and the sealing member 11 may be formed by heat treatment while being pressed at a pressure of 100 g / cm ² or more through the sealing member 11 side. In this case, since the number of fine gaps can be removed by the glass, the airtightness of the adhesive portion between the ceramic body 2 and the sealing member 11 can be improved, and in addition, the adhesive strength can be improved.

Fourth embodiment

6 is a schematic cross-sectional view of a support according to a fourth embodiment of the present invention. FIG. 7 is a schematic cross-sectional view showing a portion of the support shown in FIG. 6 and 7, a support according to a fourth embodiment of the present invention is described.

As shown in Figs. 6 and 7, the support 1 used as the susceptor for the semiconductor manufacturing apparatus has basically the same configuration as that shown in Fig. 5, but the configuration of the sealing member 21 (see Fig. 6) is different from this. different. That is, in the support 1 shown in Figs. 6 and 7, the sealing member 21 is an electric circuit such as the electrode 4 and the heat transfer circuit 5 and the terminal side electrode wire 8 used as the power supply conducting member. It is arranged in the tubular member 6 to surround the periphery of the connection between them. The sealing member 21 is adhered and fixed to the surface of the ceramic body 2 containing aluminum nitride with the glass 13. In addition, a terminal side electrode line 8 is disposed in the sealing member 21 (an opening in the sealing member 21), and the glass 13 is formed between the terminal side electrode line 8 and the sealing member 21. It is provided as another adhesive member. As a material for the terminal side electrode wire 8, an iron-nickel-cobalt alloy may be used. The sealing member 21 isolates the connecting portion of the electrode 4 and the terminal side electrode line 8 having the heat transfer circuit 5 from the atmosphere surrounding the sealing member 21.

The glass 13 functioning as another adhesive member has a surface extending from a portion of the surface of the sealing member 21 to a portion of the surface of the terminal-side electrode wire 8, and the glass 13 has a concave cross-sectional shape. (So-called meniscus is formed). As a result, as in the case of the support 1 in the first embodiment of the present invention, high airtightness can be obtained by the glass 13 at the bonding portion between the sealing member 21 and the terminal side electrode wire 8.

Further, in the support 1 shown in Figs. 6 and 7, between the electric circuit of the ceramic body 2, such as a power supply terminal for the electric heating circuit 5 and the electrode 4, and the terminal side electrode wire 8 The connecting portion is arranged in an area surrounded by the ceramic body 2 and the sealing member 21. The adhesive zone between the sealing member 21 and the ceramic body 2 is formed of glass 13 to have a certain airtightness, and the sealing member 21 and the terminal side electrode wire 8 are held together by the glass 13 together. The area in which the connection is arranged is isolated from the atmosphere (other zones) surrounding the sealing member 21. Therefore, as in the first embodiment of the present invention, the material or electric circuit forming the connection portion is subject to the problem of being corroded by oxygen in the air existing inside the tubular member 6 or the like when a heat treatment such as etching is performed. It is possible to prevent the occurrence.

In addition, since the sealing member 21 is disposed inside the tubular member 6, and the above-described connecting portion is isolated in the area surrounding the sealing member 21, it is brought into the tubular member 6 which has been performed in the past. There is no need for piping to supply inert gas. Therefore, since the configuration of the support 1 can be simple, the manufacturing cost can be reduced. In addition, when the workpiece is processed by etching or the like using the support 1, it is unnecessary to continuously supply the inert gas into the tubular member 6, so that the driving ratio can be reduced by using the support 1. Can be.

Materials having coefficients of thermal expansion that do not differ significantly from each other may be used as materials for the ceramic body 2, the sealing member 21, the terminal side electrode line 8, and the power side electrode line 9. In this case, the thermal stress can be prevented from concentrating locally on the bonding portion between the materials for the ceramic body 2 and the sealing member 21 by, for example, a change in ambient temperature.

As described above, since the sealing member 21 is provided for each of the connection portions between the electric circuit such as the heat transfer circuit 5 and the electrode 4 and the terminal side electrode wire 8, the dimensions of the sealing member 21 Can be reduced. Thus, the cost of the sealing member 21 can be reduced. Also, since the area where the ceramic body 2 and the sealing member 21 contact each other can be reduced, the influence of the sealing member 21 on the temperature distribution in the ceramic body 2 can be reduced. As a result, the temperature distribution in the ceramic body 2 can be made more constant, so that the temperature distribution of a workpiece such as a semiconductor substrate disposed on the ceramic body 2 can also be made constant.

In the support 1 shown in FIGS. 6 and 7, the glass 13 is sealed at the connection between the power supply terminal 5 and the power supply terminal for the electrode 4 and the terminal side electrode wire 8. And an additional adhesive member between the terminal side electrode wire 8 and the terminal side electrode wire 8. In this case, as long as the sealing member 21 and the terminal side electrode wire 8 are reliably contacted together and sealed to the bottom of the sealing member 21, for example, the terminal at the top or the center of the sealing member 21. A gap may be formed between the side electrode line 8 and the inner wall of the sealing member 21. Preferably, the gap should be in a vacuum or non-oxidizing atmosphere. In this case, the connection portion between the electric circuit such as the heat transfer circuit 5 and the terminal side electrode line 8 and the terminal side electrode line 8 can be effectively prevented from being oxidized.

In the support 1, the amount of leakage of helium from the region in which the connection portion between the electrical circuit such as the heat transfer circuit 5 and the terminal side electrode line 8 is disposed to the region surrounding the sealing member 21 is preferably 10- ^{. 8} Pa · m ³ / s or less. In this case, the oxidation of the connection portion between the power supply terminal and the terminal side electrode line 8 and the terminal side electrode line 8 for the heat transfer circuit 5 or the like disposed in the sealing member 21 can be reliably suppressed.

In the support body 1, glass which functions as an adhesive member may be provided between the ceramic body 2 and the sealing member 21 between them. In this case, the gap between the sealing member 21 and the ceramic body 2 can be filled with glass. As a result, the airtightness of the adhesive portion can be improved.

As shown in Figs. 6 and 7, the glass 13 serving as an adhesive member has a surface extending from a portion of the back surface of the ceramic body 2 to a portion of the surface of the sealing member 21, and the glass 13 The surface of is a concave meniscus. In this case, the glass 13 is understood to have good wettability on the surfaces of the sealing member 21 and the ceramic body 2, and the adhesive portion between the sealing member 21 and the ceramic body 2 has good airtightness. . As a result, the occurrence of leakage at the adhesive portion can be prevented without failure.

As in the first embodiment of the present invention, ZnO-SiO ₂ -B ₂ O ₃ -based glass may be used as the glass 13. In addition, the material for forming the sealing member 21 may include a material equivalent to that for forming the tubular member 6. Further, the material for forming the sealing member 21 may include a material for forming the ceramic body 2.

8 is a schematic cross-sectional view showing a first modification 1 of the support 1 shown in FIGS. 6 and 7 according to the fourth embodiment of the present invention. FIG. 9 is a schematic cross-sectional view showing a portion of the workpiece support shown in FIG. 8. FIG. 8 and 9, a first modification of the support according to the fourth embodiment of the present invention is described.

As shown in Figs. 8 and 9, the support 1 used as the susceptor for the semiconductor manufacturing apparatus is except that the shape of the glass 13 for adhering the sealing member 21 to the ceramic body 2 is different. It has basically the same configuration as the support 1 shown in Figs. That is, in the support 1 shown in Figs. 8 and 9, the glass 13 is provided between the sealing member 21 and the ceramic body 2. Moreover, the glass 13 is arrange | positioned in order to surround and seal the connection part between the terminal side electrode line 8 and the electric power supply terminals 7a-7c. In addition, there is a space in which the glass 13 is not provided between the sealing member 21 and the terminal side electrode wire 8. That is, the glass 13 is only provided on the ceramic body 2 side between the sealing member 21 and the terminal side electrode wire 8. This configuration can provide the same advantages as the support 1 shown in FIGS. 6 and 7.

In the heat treatment for fixing the glass 13 to the support 1, pressure is preferably applied to the glass 13 via the sealing member 21. In this case, a pressure of 100 g / cm ² or more is preferably applied to the glass 13 from the sealing member 21 side. Thus, the number of fine gaps present at the interface between the glass 13 and the ceramic body 2, the sealing member 21 or the terminal side electrode line 8 can be reduced or eliminated. As a result, the amount of helium leak from each of the regions where the connection portion between the power supply terminals 7a to 7c and the terminal side electrode line 8 is disposed can be reduced, that is, the airtightness can be improved. Also, when a pressure of 100 g / cm ² or more is applied, approximately the same advantages as in the fourth embodiment can be obtained, but when the pressure is less than 100 g / cm ² , the significant effect of reducing the helium leak amount cannot be obtained.

10 is a schematic sectional view showing a second modification of the support 1 shown in FIGS. 6 and 7 according to the fourth embodiment of the present invention. FIG. 11 is a schematic cross sectional view showing a portion of the workpiece support shown in FIG. 10; FIG. 10 and 11, a second modification of the support according to the fourth embodiment of the present invention is described.

As shown in Figs. 10 and 11, the support 1 used as the susceptor for the semiconductor manufacturing apparatus has the support 1 shown in Figs. 8 and 9 except that the shape of the surface of the ceramic body 2 is different. ) Basically have the same configuration. That is, in the support 1 shown in Fig. 10, three grooves 25 (see Fig. 11) are formed on the back side of the ceramic body 2. The shape of the groove 25 in the plan view may be circular or polygonal. In addition, the power supply terminals 7a to 7c are exposed on the bottom wall of the groove 25. Cross sections of the power supply terminals 7a to 7c exposed on the bottom wall of the groove 25 are connected to the corresponding terminal side electrode wires 8. The sealing member 21 and the glass 13 are provided around the connection between the power supply terminals 7a to 7c and the terminal side electrode line 8, as in the support 1 shown in Figs.

The configuration thus formed provides the same advantages as the support 1 shown in FIGS. 8 and 9. Further, since the connecting portion between the power supply terminals 7a to 7c and the terminal side electrode line 8 is disposed in the groove 25, if any stress is applied to the terminal side electrode line 8 in the transverse direction (that is, in the transverse direction) When stress is applied to the connection, for example, the stress is distributed and applied not only to the adhesive portion between the bottom wall of the groove 25 and the glass 13 but also to the side wall of the groove 25. In addition, the durability of the connecting portion can be improved. In this case, the glass 13 or the sealing member 21 is preferably arranged in contact with the side wall of the groove 25. With such a configuration, since the glass 13 or the sealing member 21 is supported by the side wall of the groove 25, the durability of the connection to external force can be effectively improved.

In the above-described embodiment of the present invention, the connecting portion between the power supply terminals 7a to 7c and the terminal side electrode wire 8 may have a screw structure. For example, the screw portion may be formed at each end of the power supply terminals 7a to 7c, and the screw hole is opposed to each upper portion (each power supply terminal 7a to 7c) of the terminal side electrode wire 8. May be formed). Thereafter, by inserting the screw portions into the screw holes and fixing them, the terminal side electrode wires 8 and the corresponding power supply terminals 7a to 7c may be connected to each other.

Examples

The following experiments are carried out to demonstrate the advantages of the support according to the invention.

First, starting materials of four types of powders having the compositions shown in Table I are prepared.

number Mass ratio Composition 1 AIN: Y ₂ O ₃ = 100: 5 Composition 2 AIN: Y ₂ O ₃ = 100: 0.5 Composition 3 Al ₂ O ₃ : CaO: MgO = 100: 0.2: 0.2 Composition 4 AIN: CaO = 100: 2.0

A binder and a solvent are added to each of the starting materials having the composition shown in Table I above, and then mixing is performed using a ball mill, thereby forming slurries having the composition (compositions 1 to 4).

Next, the individual slurries having the compositions 1 to 4 shown in Table 1 are formed into sheets by the doctor blade method. The sheets thus formed (green sheets) are cut in a circle to have a diameter of 350 mm after sintering is performed. Thereafter, the paste containing tungsten is attached to the circular sheet thus formed by the screen printing method, whereby a heat transfer circuit is formed.

Next, a plurality of sheets not provided to the heat transfer circuit are laminated on the surface on which the above heat transfer circuit is formed. Moreover, the sheet | seat which has the electrostatic electrode (electrostatic chucking) or the plasma formation (RF) electrode formed by adhering the paste containing tungsten by the screen printing method to the surface of this laminated board is laminated | stacked. As a result, a laminated sheet made of sheets is formed.

The laminated sheets thus formed are degreased by heat treatment at a heating temperature of 700 ° C. in a nitrogen atmosphere.

Next, the laminates using the slurries having the compositions 1, 2 and 4 were sintered at a heating temperature of 1,800 ° C. in a nitrogen atmosphere. The laminated sheet of slurry having the composition 3 was sintered at a heating temperature of 1,600 ° C. in a nitrogen atmosphere. Thereafter, a power supply terminal for supplying current to the electrothermal circuit and the electrostatic electrode or the plasma forming electrode is formed at a predetermined position. Therefore, a ceramic body composed of the above-described composition is formed.

Next, each of the slurries having compositions 1 to 4 shown in Table I is formed into pellets by spray drying. By using pellets as starting materials, cylindrical shaped bodies are formed by a dry press method. These shaped bodies are degreased at a heating temperature of 700 ° C. in the nitrogen stream. Thereafter, the sintering treatment is performed under the same conditions for the above-mentioned sintering of the ceramic body each having the compositions 1 to 4.

After the sintering treatment is performed, machining is performed for the cylindrical sintered body thus formed. As a result, a tubular member having an inner diameter of 50 mm, an outer diameter of 60 mm and a length of 200 mm is obtained.

In addition to these tubular members, a tubular member having a structure different from the aforementioned tubular member is formed by the same steps as described above. On the inner wall of these tubular members, projections for supporting the sealing member are provided at a distance of 30 mm from an adhesive portion (end of the tubular member) to be bonded with a ceramic body. The protrusion serving as the support has a height of 5 mm (height at the inner wall of the tubular member) and an inner diameter of 40 mm.

A slurry of Al ₂ O ₃ -Y ₂ O ₃ -AlN is attached to the cross section of the tubular member. The tubular member and the ceramic body are joined together with the slurry coating surface in contact with the back side of the ceramic body, and the thus formed body is heat treated under the same conditions as the treatment for sintering the ceramic body. As a result, each ceramic body and each tubular member are bonded together. In each combination, the ends of each power supply terminal for supplying power to the plasma forming electrode, the electrostatic electrode, and the heating circuit externally embedded in the ceramic body are exposed to the surface area disposed in the tubular member.

Next, the terminal side electrode line used as the power supply member is connected to the power supply terminal for the heat transfer circuit, the electrostatic electrode, and the plasma forming electrode. Through these electrode lines, current can be supplied to the heat transfer circuit, the electrostatic electrode, and the plasma forming electrode.

In addition, the sheets each having compositions 1 to 4 are cut to a predetermined dimension, and then they are heat treated to be a sintered body as in the case of forming a ceramic body. The sintered body may be formed by stacking a plurality of sheets having a predetermined thickness, if necessary. The sintered body thus formed is then machined to form an opening therein through which the terminal side electrode line penetrates. In addition, the laminated bodies are machined to adjust the volume around them so that they can be inserted into the tubular member. Thus, sealing members are formed. Further, as described in the fourth embodiment of the present invention, another type of sealing member used for each connection between the electric circuit and the terminal side electrode wire is formed in a similar manner.

Then, after each ceramic body is provided with an electrode wire, a power supply terminal, and a tubular member serving as a power supply member, the sealing members are respectively inserted into the tubular member. Optionally, the binder may be formed by fixing the sealing member inside the tubular member, and then the binder may be adhered to the ceramic body. Further, another type of sealing member described above is provided on the ceramic body to surround each connecting portion of the terminal side electrode line.

Thereafter, the glass is attached between the tubular member and the sealing member, and between the electrode wire and the sealing member, respectively. The sealing members are respectively fixed by firing at a temperature of 700 ° C. in a nitrogen atmosphere, an argon atmosphere, a vacuum atmosphere, or in air, whereby a region surrounded by the sealing member, the tubular member, and the ceramic body is sealed. Further, in the sample having another type of sealing member described above, the glass is attached between the sealing member and the ceramic body, between the electrode wire and the sealing member, respectively, and then heat treatment (firing treatment) is performed in a similar manner to that described above. In some samples, the heat treatment is carried out while a pressure of at least 100 g / cm ² is applied to the glass through the sealing member. Therefore, the sealing members are fixed respectively, and each zone surrounded by the sealing member and the ceramic body is sealed. The glass used for sealing in these embodiments is ZnO—SiO ₂ —B ₂ O ₃ crystallized glass.

According to the method described above, 68 samples shown in Tables 2 to 6 are prepared. In addition, the 39 samples shown in Tables 7 to 9 (Sample No. 69) in order to prove the influence of the pressure applied during the firing process of glass. To 107). Tables 2 to 9 show the conditions for assembling the samples shown in the following tests and their evaluation results.

Sample number type Ceramic sieve material Tubular Member Material Sealing Materials Sealing Atmosphere Material for electrode wire Formation of meniscus Leakage rate (Pam ³ / s) Acid resistance (750 ℃ in air) One Example Composition 1 Composition 1 Composition 1 space N ₂ Kovar has exist 10 ^-8 or less Good 2 Example Composition 1 Composition 1 Composition 1 space Ar Coba has exist 10 ^-8 or less Good 3 Example Composition 1 Composition 1 Composition 1 space vacuum Coba has exist 10 ^-8 or less Good 4 Comparative example Composition 1 Composition 1 Composition 1 space air Coba none Not sealable (oxidation of power supply terminals 5 Comparative example Composition 1 Composition 1 Composition 3 space N ₂ Coba none Not sealable (oxidation of power supply terminals 6 Comparative example Composition 1 Composition 1 Composition 1 space N ₂ Ni none Not sealable (oxidation of power supply terminals 7 Example Composition 1 Composition 1 Composition 2 space N ₂ Coba has exist 10 ^-8 or less Good 8 Example Composition 1 Composition 1 Composition 4 space N ₂ Coba has exist 10 ^-8 or less Good 9 Example Composition 2 Composition 2 Composition 1 space N ₂ Coba has exist 10 ^-8 or less Good 10 Example Composition 3 Composition 3 Composition 3 space N ₂ Coba has exist 10 ^-8 or less Good 11 Comparative example Composition 3 Composition 3 Composition 1 space N ₂ Coba none Not sealable (oxidation of power supply terminals 12 Example Composition 1 Composition 2 Composition 4 space N ₂ Coba has exist 10 ^-8 or less Good 13 Example Composition 1 Composition 1 Composition 1 contact N ₂ Coba has exist 10 ^-8 or less Good 14 Example Composition 1 Composition 1 Composition 1 contact Ar Coba has exist 10 ^-8 or less Good 15 Example Composition 1 Composition 1 Composition 1 contact vacuum Coba has exist 10 ^-8- or less Good

Sample number type Ceramic sieve material Tubular Member Material Sealing Materials Sealing Atmosphere Material for electrode wire Formation of meniscus Leakage rate (Pam ³ / s) Acid resistance (750 ℃ in air) 16 Comparative example Composition 1 Composition 1 Composition 1 contact air Coba none Not sealable (oxidation of power supply terminals 17 Comparative example Composition 1 Composition 1 Composition 3 contact N ₂ Coba none Not sealable (oxidation of power supply terminals 18 Comparative example Composition 1 Composition 1 Composition 1 contact N ₂ Ni none Not sealable (oxidation of power supply terminals 19 Example Composition 1 Composition 1 Composition 2 contact N ₂ Coba has exist 10 ^-8- or less Good 20 Example Composition 1 Composition 1 Composition 4 contact N ₂ Coba has exist 10 ^-8- or less Good 21 Example Composition 2 Composition 2 Composition 1 contact N ₂ Ni has exist 10 ^-8- or less Good 22 Example Composition 3 Composition 3 Composition 3 contact N ₂ Coba has exist 10 ^-8- or less Good 23 Comparative example Composition 3 Composition 3 Composition 1 contact N ₂ Coba none Not sealable (oxidation of power supply terminals 24 Example Composition 1 Composition 2 Composition 4 contact N ₂ Coba has exist 10 ^-8- or less Good

Sample number type Ceramic sieve material Tubular Member Material Sealing Materials Sealing Atmosphere Electrode wire materials1 Formation of meniscus Leakage rate (Pam ³ / s) Acid resistance (750 ℃ in air) 25 Example Composition 1 Composition 1 Composition 1 Individual N ₂ Coba has exist 10 ^-8 or less Good 26 Example Composition 1 Composition 1 Composition 1 Individual Ar Coba has exist 10 ^-8 or less Good 27 Example Composition 1 Composition 1 Composition 1 Individual vacuum Coba has exist 10 ^-8 or less Good 28 Comparative example Composition 1 Composition 1 Composition 1 Individual air Coba none Not sealable 29 Example Composition 1 Composition 1 Composition 3 Individual N ₂ Coba has exist 10 ^-8 or less Good 30 Comparative example Composition 1 Composition 1 Composition 1 Individual N ₂ Ni none Not sealable 31 Example Composition 1 Composition 1 Composition 2 Individual N ₂ Coba has exist 10 ^-8 or less Good 32 Example Composition 1 Composition 1 Composition 4 Individual N ₂ Coba has exist 10 ^-8 or less Good 33 Example Composition 2 Composition 2 Composition 1 Individual N ₂ Coba has exist 10 ^-8 or less Good 34 Example Composition 3 Composition 3 Composition 3 Individual N ₂ Coba has exist 10 ^-8 or less Good 35 Comparative example Composition 3 Composition 3 Composition 1 Individual N ₂ Coba none Not sealable 36 Example Composition 1 Composition 2 Composition 4 Individual N ₂ Coba has exist 10 ^-8 or less Good

Sample number type Ceramic sieve material Tubular Member Material Sealing Materials Sealing Atmosphere Material for electrode wire Formation of meniscus Leakage rate (Pam ³ / s) Acid resistance (750 ℃ in air) 37 Comparative example Composition 1 Composition 1 Composition 1 space N ₂ W (unplated) has exist 10 ^-8 or less Oxidized 38 Example Composition 1 Composition 1 Composition 1 space N ₂ W-1 has exist 10 ^-8 or less Good 39 Example Composition 1 Composition 1 Composition 1 space vacuum W-2 has exist 10 ^-8 or less Good 40 Example Composition 1 Composition 1 Composition 1 space N ₂ W-3 has exist 10 ^-8 or less Good 41 Comparative example Composition 1 Composition 1 Composition 1 space N ₂ Cu-W (Unplated) has exist 10 ^-8 or less Oxidized 42 Example Composition 1 Composition 1 Composition 1 space N ₂ Cu-W-1 has exist 10 ^-8 or less Good 43 Example Composition 1 Composition 1 Composition 1 space N ₂ Cu-W-2 has exist 10 ^-8 or less Good 44 Example Composition 1 Composition 1 Composition 1 space N ₂ Cu-W-3 has exist 10 ^-8 or less Good 45 Comparative example Composition 1 Composition 1 Composition 1 space N ₂ Mo (Unplated) has exist 10 ^-8 or less Oxidized 46 Example Composition 1 Composition 1 Composition 1 space N ₂ Mo-1 has exist 10 ^-8 or less Good 47 Example Composition 1 Composition 1 Composition 1 space N ₂ Mo-2 has exist 10 ^-8 or less Good 48 Example Composition 1 Composition 1 Composition 1 space N ₂ Mo-3 has exist 10 ^-8 or less Good 49 Comparative example Composition 1 Composition 1 Composition 1 space N ₂ Cu-Mo- (non-plated) has exist 10 ^-8 or less Oxidized 50 Example Composition 1 Composition 1 Composition 1 space N ₂ Cu-Mo-1 has exist 10 ^-8 or less Good 51 Example Composition 1 Composition 1 Composition 1 space N ₂ Cu-M-2 has exist 10 ^-8 or less Good 52 Example Composition 1 Composition 1 Composition 1 space N ₂ Cu-M-3 has exist 10 ^-8 or less Good

Sample number type Ceramic sieve material Tubular Member Material Sealing Materials Sealing Atmosphere Material for electrode wire Formation of meniscus Leakage rate (Pam ³ / s) Acid resistance (750 ℃ in air) 53 Comparative example Composition 1 Composition 1 Composition 1 contact N ₂ W (unplated) has exist 10 ^-8 or less Oxidized 54 Example Composition 1 Composition 1 Composition 1 contact N ₂ W-1 has exist 10 ^-8 or less Good 55 Example Composition 1 Composition 1 Composition 1 contact vacuum W-2 has exist 10 ^-8 or less Good 56 Example Composition 1 Composition 1 Composition 1 contact N ₂ W-3 has exist 10 ^-8 or less Good 57 Comparative example Composition 1 Composition 1 Composition 1 space N ₂ Cu-W (Unplated) has exist 10 ^-8 or less Oxidized 58 Example Composition 1 Composition 1 Composition 1 space N ₂ Cu-W-1 has exist 10 ^-8 or less Good 59 Example Composition 1 Composition 1 Composition 1 space N ₂ Cu-W-2 has exist 10 ^-8 or less Good 60 Example Composition 1 Composition 1 Composition 1 space N ₂ Cu-W-3 has exist 10 ^-8 or less Good 61 Comparative example Composition 1 Composition 1 Composition 1 space N ₂ Mo (Unplated) has exist 10 ^-8 or less Oxidized 62 Example Composition 1 Composition 1 Composition 1 space N ₂ Mo-1 has exist 10 ^-8 or less Good 63 Example Composition 1 Composition 1 Composition 1 space N ₂ Mo-2 has exist 10 ^-8 or less Good 64 Example Composition 1 Composition 1 Composition 1 space N ₂ Mo-3 has exist 10 ^-8 or less Good 65 Comparative example Composition 1 Composition 1 Composition 1 space N ₂ Cu-Mo (Unplated) has exist 10 ^-8 or less Oxidized 66 Example Composition 1 Composition 1 Composition 1 space N ₂ Cu-Mo-1 has exist 10 ^-8 or less Good 67 Example Composition 1 Composition 1 Composition 1 space N ₂ Cu-Mo-2 has exist 10 ^-8 or less Good 68 Example Composition 1 Composition 1 Composition 1 space N ₂ Cu-Mo-3 has exist 10 ^-8 or less Good

Sample number type Ceramic sieve material Tubular Member Material Sealing Materials Sealing Atmosphere Material for electrode wire Formation of meniscus Leakage rate (Pam ³ / s) Acid resistance (750 ℃ in air) 69 Example Composition 1 Composition 1 Composition 1 Contact with glass (Figure 8) N ₂ Coba none 10 ^-8 or less Good 70 Comparative example Composition 1 Composition 1 Composition 1 Same as above N ₂ W none 10 ^-8 or less Unfavorable 71 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ W-1 none 10 ^-8 or less Good 72 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ W-1 100 g / cm ² 10 ^-8 or less Good 73 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ W-2 none 10 ^-8 or less Good 74 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ W-2 100 g / cm ² 10 ^-8 or less Good 75 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ W-3 none 10 ^-8 or less Good 76 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ W-3 100 g / cm ² 10 ^-8 or less Good 77 Comparative example Composition 1 Composition 1 Composition 1 Same as above N ₂ Mo none 10 ^-8 or less Unfavorable 78 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Mo-1 100 g / cm ² 10 ^-8 or less Good 79 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Mo-1 none 10 ^-8 or less Good 80 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Mo-2 none 10 ^-8 or less Good 81 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Mo-2 100 g / cm ² 10 ^-8 or less Good 82 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Mo-3 none 10 ^-8 or less Good 83 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Mo-3 100 g / cm ² 10 ^-8 or less Good 84 Comparative example Composition 1 Composition 1 Composition 1 Same as above N ₂ Cu-W none 10 ^-8 or less Unfavorable

Sample number type Ceramic sieve material Tubular Member Material Sealing Materials Sealing Atmosphere Material for electrode wire Sealing load Leakage rate (Pam ³ / s) Acid resistance (750 ℃ in air) 85 Example Composition 1 Composition 1 Composition 1 Contact with glass (Figure 8) N ₂ Cu-W-1 none 10 ^-8 or less Good 86 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Cu-W-1 100 g / cm ² 10 ^-8 or less Good 87 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Cu-W-2 none 10 ^-8 or less Good 88 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Cu-W-2 100 g / cm ² 10 ^-8 or less Good 89 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Cu-W-3 none 10 ^-8 or less Good 90 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Cu-W-3 100 g / cm ² 10 ^-8 or less Good 91 Comparative example Composition 1 Composition 1 Composition 1 Same as above N ₂ Cu-Mo none 10 ^-8 or less Unfavorable 92 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Cu-W-1 none 10 ^-8 or less Good 93 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Cu-W-1 100 g / cm ² 10 ^-8 or less Good 94 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Cu-W-2 none 10 ^-8 or less Good 95 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Cu-W-2 100 g / cm ² 10 ^-8 or less Good 96 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Cu-W-3 none 10 ^-8 or less Good 97 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Cu-W-3 100 g / cm ² 10 ^-8 or less Good 98 Example Composition 1 Composition 1 Composition 1 Same as above N ₂ Coba 100 g / cm ² 10 ^-8 or less Good 99 Example Composition 1 Composition 1 Composition 1 Same as above argon Coba none 10 ^-8 or less Good 100 Example Composition 1 Composition 1 Composition 1 Same as above argon Coba 100 g / cm ² 10 ^-8 or less Good

Sample number type Ceramic sieve material Tubular Member Material Sealing Materials Sealing Atmosphere Material for electrode wire Formation of meniscus Leakage rate (Pam ³ / s) Acid resistance (750 ℃ in air) 101 Example Composition 1 Composition 1 Composition 1 Contact with glass (Figure 8) vacuum Coba none 10 ^-8 or less Good 102 Example Composition 1 Composition 1 Composition 2 Same as above N ₂ Coba none 10 ^-8 or less Good 103 Example Composition 1 Composition 1 Composition 4 Same as above N ₂ Coba none 10 ^-8 or less Good 104 Example Composition 2 Composition 3 Composition 1 Same as above N ₂ Coba none 10 ^-8 or less Good 105 Example Composition 3 Composition 3 Composition 3 Same as above N ₂ Coba none 10 ^-8 or less Good 106 Comparative example Composition 3 Composition 3 Composition 1 Same as above N ₂ Coba none Not sealable (oxidation of power supply terminals 107 Example Composition 1 Composition 2 Composition 4 Same as above N ₂ Coba none 10 ^-8 or less Good

In the column "material for electrode lines" in the table, Cu-W means a copper-tungsten alloy. In the column "material for electrode lines" in Table 5, sample number 38 means that the electrode lines are made of a tungsten base material having a nickel plated layer (hereinafter referred to as "first plating layer") having a thickness of 2 m. "W-2" in Sample No. 39 in the column "electrode line material" means that a tungsten base material having a gold plated layer (hereinafter referred to as "second plated layer") having a thickness of 1 mu m as the plated layer is used for the electrode line. "W-3" in Sample No. 40 in the column "electrode wire material" means that a tungsten base material having a 2 μm thick nickel layer and a 1 μm thick gold layer plated thereon was used for the electrode wire. .

"Cu-W-1", Cu-W-2 ", and" Cu-W-3 "in Sample Nos. 42 to 44 in the column" electrode line material "indicate that the electrode lines are formed of the first, second and third plating layers, respectively. Each made of a Cu-W alloy base material having a plating. &Quot; Mo-1 " to " Mo-3 " in Sample Nos. 46 to 48 in the column " electrode line material " It is formed of a molybdenum base material having a plating of the plating layer, respectively .. In the column "sealing" of Tables 7 to 9, the term "contact with glass (FIG. 8)" means that the type of sealing used for the support shown in FIG. It means to be used.

To determine the thermal resistance and acid resistance of the support, each sample is heat treated at 750 ° C. for 1,000 hours in air. Each sample is then evaluated for oxidation at the connection (power supply terminal, etc.) between the heating circuit lamp and the electrode wire by measuring the circuit resistance of the heating circuit lamp after the heat treatment. As a result, it is confirmed that the samples of the support formed according to the embodiment of the present invention have sufficient acid resistance as shown in Figs.

Next, in order to determine the airtightness of the seals (ceramic body, tubular member, area enclosed by the sealing member) of each sample, the seals on the surface of the ceramic body (wafer mounted), as shown in Figs. The measuring hole 19 which is a hole penetrating to it is formed. For the sample having the configuration corresponding to that shown in Figs. 6 and 7 according to the fourth embodiment of the present invention, the measuring hole 19 has a sealing member 21 for extending in its inner circumference as shown in Fig. 14. It is formed on the inner wall of the. For samples (Samples No. 69 to 107) having a configuration corresponding to that shown in Fig. 8 of the first modification according to the fourth embodiment of the present invention, in order to determine airtightness, the surface of the ceramic body (wafer is mounted A measuring hole is formed, which is a hole penetrating to the sealing part. 12 to 14 are schematic cross sectional views each showing a sample used for measuring airtightness. The interior of the sealing zone (the zone enclosed by the sealing member and the ceramic body) and the sealing zone (the tubular member, the sealing member, the zone enclosed by the ceramic body) has an arrow 20 through this measuring hole 19 formed by machining. Ejection in the direction indicated by, and then leak measurements are performed for each sample using a helium detector. The results are shown in Tables 2-4. As shown in Tables 2 through 4, the sealing zone of each sample according to an embodiment of the present invention has sufficient airtightness.

Further, the sealing portion (adhesive portion between the sealing member and the terminal side electrode wire, sealing portion between the sealing member and the ceramic body) forms a glass and tubular member, sealing member, ceramic body, or meniscus portion between the electrode wire which functions as an adhesive member. Is evaluated against. The results are shown in Tables 2-6. As shown in Tables 2 to 6, in all support samples having the meniscus, the sealing zone has high airtightness.

For Sample Nos. 69 to 107, it is shown in Tables 7 to 9 whether pressure is applied during the firing process (when sealing is performed). It is understood that the samples subjected to pressure during sealing from Tables 7 to 9 have higher airtightness.

Although not shown in Tables 2 to 9, molybdenum or tungsten is used as the material for forming the power supply terminal embedded in the ceramic body. When molybdenum or tungsten is used as the material for the power supply terminal, there is no appreciable difference especially in the advantages between the materials.

In the columns "sealing" in Tables 2 to 6, "space", "contact" and "individual" are shown. "Space" means a configuration in which a space is formed as a sealing region by the sealing member, the tubular member, and the ceramic body because the sealing member and the ceramic body are disposed apart from each other, as in the case of the first embodiment of the present invention. The term "contacting" means a configuration in which the sealing member is in contact with the rear surface of the ceramic body, as in the case of the third embodiment of the present invention. Further, " individual " means a configuration in which the individual sealing members are provided for corresponding connections between the electric circuit and the terminal side electrode lines, as in the case of the fourth embodiment of the present invention. The term "contact with glass (Fig. 8)" means a configuration in which the glass is provided only on the ceramic body side of the sealing member, as in the case of the support shown in Fig. 8.

The column "sealing atmosphere" shows the atmosphere used for the heat treatment performed to adhere and fix the sealing member to the tubular member or the electrode wire after the glass is attached. The material shown in the column "electrode line material" is a material used for an electrode line connected to a plasma forming electrode embedded in a ceramic body, an electrostatic electrode, and a power supply terminal for an electric circuit such as an electrothermal circuit.

The foregoing embodiments are disclosed by way of example, and the invention is not limited thereto. The spirit and scope of the invention are set forth in the claims, and modifications thereof may be made selectively without departing from the spirit and scope of the invention.

As mentioned above, when the workpiece support of the present invention is used, an inexpensive susceptor capable of reliably resisting stringent processing conditions can be obtained for use in a semiconductor manufacturing apparatus, and also, the workpiece support according to the present invention. In the sealing member is disposed in and adhered to the tubular member supporting the ceramic body, the connection to which the electrical circuit for the ceramic body is connected to the power supply conducting member can be isolated in the atmosphere around the workpiece support, so that the connecting portions are in the tubular member. It can be prevented from being damaged by the oxygen contained in the air present. Therefore, it is unnecessary to supply an inert gas into the space in the tubular member in order to avoid damaging the connection, resulting in a reduction in cost of the workpiece support.

Claims (39)

A ceramic body supporting the workpiece and having an electrical circuit; A tubular member having an end ("first end") fixed to the back of the ceramic body, A sealing member disposed in and adhered to the tubular member, separating the space in the tubular member into two zones: a first end side zone (“sealing zone”) and an opposite side zone (“counting zone”), And a power supply conducting member that penetrates the sealing member toward the sealed region, extends on the opposite side, and is electrically connected to the electrical circuit of the ceramic body. The workpiece support of claim 1, wherein the sealing member is in contact with a rear surface of the ceramic body. The workpiece support of claim 1, wherein the sealing member is disposed at a distance from a rear surface of the ceramic body. The workpiece support according to claim 1, wherein the sealing member is adhered to the rear surface of the ceramic body through a fixed adhesive member. 5. The workpiece support according to claim 4, wherein the fixed adhesive member is formed by heating the fixed adhesive material while a pressure of 100 g / cm ² or more is applied thereto through the sealing member. The workpiece support according to claim 1, wherein the area defined by the sealing member, the tubular member, and the ceramic body is a vacuum or non-oxidizing atmosphere. The workpiece support according to claim 1, wherein the amount of helium leaking from the region defined by the sealing member, the tubular member, and the ceramic body to another region is 10 ⁻⁸ Pa · m ³ / s or less. The workpiece support of claim 1, wherein the tubular member and the sealing member are adhered together through an adhesive member provided therebetween. The workpiece support according to claim 8, wherein the adhesive member is formed by heating the adhesive material while a pressure of 100 g / cm ² or more is applied thereto through the sealing member side. 10. The workpiece support according to claim 9, wherein the adhesive member has a surface extending from a portion of the inner surface of the tubular member to a portion of the surface of the sealing member, wherein the surface of the contact member is a concave meniscus. 9. The workpiece support of claim 8, wherein the adhesive member has a surface extending over a portion of the surface of the sealing member at a portion of the inner surface of the tubular member, wherein the surface of the adhesive member is a concave meniscus. The workpiece support of claim 8, wherein the adhesive member comprises glass. 13. The workpiece support of claim 12, wherein the glass is ZnO-SiO ₂ -B ₂ 0 ₃ -based glass. The method of claim 8, wherein the adhesive portion between the sealing member and the power supply conductive member includes an additional adhesive member provided between the sealing member and the power supply conductive member, The adhesive member has a surface extending over a portion of the surface of the power supply conducting member at a portion of the surface of the sealing member, The surface of the additional adhesive member is a concave meniscus. The workpiece support of claim 1, wherein the sealing member comprises a material equivalent to the material forming the tubular member. The workpiece support of claim 1, wherein the sealing member comprises a material equivalent to a material forming a ceramic body. The workpiece support of claim 1, wherein the ceramic body comprises aluminum nitride. The workpiece support of claim 1, wherein the power supply conducting member comprises an iron-nickel-cobalt alloy. The method of claim 1, wherein the power supply conducting member A base material comprising at least one selected from the group consisting of tungsten, molybdenum and alloys thereof; A workpiece support comprising at least one of nickel and gold and comprising a coating layer provided on the surface of the base material. A processing apparatus comprising the workpiece support according to claim 1. A semiconductor manufacturing apparatus comprising the workpiece support according to claim 1. A ceramic body supporting the workpiece and having an electrical circuit, A tubular member having an end fixed to the back of the ceramic body and A power supply conducting member electrically connected to the electrical circuit at a connection in the tubular member; A sealing member disposed in the tubular member and bonded to the ceramic body at the connection portion disposed in the tubular member; A sealing member fixed to the back side of the ceramic body and disposed in the tubular member to form a respective sealing portion surrounding each connecting portion, And the sealing members isolate the sealing of the connection from the atmosphere surrounding the outer circumference of the sealing member. The workpiece support according to claim 22, wherein the sealing portion of the connection portion where the power supply conducting member and the electrical circuit are connected together is in a vacuum or non-oxidizing atmosphere. 24. The workpiece support according to claim 23, wherein the amount of helium leak from the sealing portion of the connecting portion to which the power supply conducting member and the electrical circuit are connected together is 10 ⁻⁸ Pa · m ³ / s or less. 23. The workpiece support according to claim 22, wherein the amount of helium leak from the sealing portion of the connection portion where the power supply conducting member and the electrical circuit are connected together is less than 10 ^-8 Pa · m ³ / s. 23. The workpiece support of claim 22, wherein said adhesive portion comprises an adhesive member provided between a ceramic body and a sealing member. 27. The workpiece support of claim 26, wherein the adhesive member is formed by heating the adhesive material while a pressure of at least 100 g / cm ² is applied thereto through the sealing member. The workpiece support according to claim 27, wherein the adhesive member has a surface extending from a portion of the back surface of the ceramic body to a portion of the surface of the sealing member, and the surface of the adhesive member is a concave meniscus. 27. The workpiece support according to claim 26, wherein the adhesive member has a surface extending from a portion of the rear surface of the ceramic body to a portion of the surface of the sealing member, and the surface of the adhesive member is a concave meniscus. 27. The workpiece support of claim 26, wherein the adhesive member comprises glass. 31. The workpiece support of claim 30, wherein the glass is ZnO-SiO ₂ -B ₂ 0 ₃ -based glass. 27. The method of claim 26, wherein the adhesive portion between the sealing member and the power supply conductive member includes an additional adhesive member provided between the sealing member and the power supply conductive member, The adhesive member has a surface extending over a portion of the surface of the power supply conducting member at a portion of the surface of the sealing member, The surface of the additional adhesive member is a concave meniscus. 23. The workpiece support of claim 22, wherein the sealing member comprises a material equivalent to the material forming the tubular member. 23. The workpiece support of claim 22, wherein the sealing member comprises a material equivalent to the material from which the ceramic body is formed. 23. The workpiece support of claim 22, wherein said ceramic body comprises aluminum nitride. 23. The workpiece support of claim 22, wherein the power supply conducting member comprises an iron-nickel-cobalt alloy. 23. The device of claim 22, wherein the power supply conducting member is A base material comprising at least one selected from the group consisting of tungsten, molybdenum and alloys thereof; And a coating layer provided on the surface of the base material and comprising at least one of nickel and gold. A processing apparatus with a workpiece support according to claim 22. A semiconductor manufacturing apparatus provided with the workpiece support according to claim 22.