KR200206816Y1 - Projector for edge exposure device of wafer - Google Patents

Abstract

The projector for a wafer peripheral exposure apparatus of the present invention includes a housing (1) configured to transmit light from the optical fiber (6), and the light transmitted from the optical fiber (6) while being inherent in the housing (1). The mask 2 coated with the chrome film 6 with the remaining portion except for the aperture portion 5 formed on one side of the base 4 so as to filter by wavelength, and the light passing through the aperture portion 5 are wafers ( In the projector for a wafer peripheral exposure apparatus having the lens group 3 configured by stacking a plurality of lenses to be focused on the die pattern side of W), the aperture portion 5 is one side at a predetermined position of the mask 2. The opening is formed to form the open end 5a and the other end is closed to form the closed end 5b. The center O1 of the closed end 5b is the same position as the center of the lens group 3. Is formed in the imaging optical system Z1 and forms the open end 5a. ) And the center O2 between the closed end 5b is installed at the same position as the center of the optical fiber 6 installed at a predetermined position spaced apart from the imaging optical system Z1 by a predetermined distance, thereby providing an illumination optical system Z2. Since the light passing through the optical fiber 6 is focused and deflected toward the die pattern side, the exposure state on the die pattern side can be made more uniform, as well as particles in the post-exposure process. It is possible to prevent (pollutant) generation.

Description

PROJECTOR FOR EDGE EXPOSURE DEVICE OF WAFER}

The present invention relates to a projector, and more particularly, to a projector for a wafer peripheral exposure apparatus that can prevent the occurrence of a slope on the die pattern side when exposed in the wafer peripheral exposure apparatus.

BACKGROUND OF THE INVENTION In general, semiconductor devices that are widely used are made of a disk-shaped wafer made of silicon, and a plurality of devices are simultaneously formed on the wafer surface by performing a number of processes such as epitaxial layering, oxidation, photoresist coating, and exposure. It is manufactured by cutting through die cutting process, etc. and separated into each chip.

In other words, by exposing the circuit pattern formed in advance on the mask to a wafer coated with a silicon oxide film and a photoresist (photoresist), an electronic circuit and a circuit pattern are formed on each die. This is what is produced.

Here, a die pattern peripheral exposure apparatus is used to expose a region other than the die pattern in addition to the exposure process to remove a photosensitive liquid that becomes a particle element in a later process.

As shown in Fig. 6, the wafer includes a chuck 50 such as a vacuum suction pad on which the wafer W is seated, a rotating portion 51 such as a motor or the like installed to rotate the chuck 50, and the wafer. A primary alignment unit 52 installed to sense the flat portion F of (W), and 2 installed to align the die pattern DP after alignment of the wafer W in the primary alignment unit 52 is performed. The primary alignment unit 53 and the exposure unit 53 exposing the die pattern DP edge portion after the first and second alignment.

The exposure unit 53 includes a lamp 54 for generating light and a lens unit provided to receive the light from the lamp 54 to the optical fiber 55 and irradiate the edge portion of the die pattern DP in a light state. It consists of 56.

As shown in FIG. 7, the lens unit 56 includes a cylindrical housing 57 having an optical fiber 55 connected to an upper end thereof, and a wavelength of light transmitted from the optical fiber 55 installed in the housing 57. A lens 58 for focusing / irradiating the filter 58 passing only a desired wavelength and the light passing through the filter 58 to the wafer W through an aperture 59 of the housing 57 ( Usually, it consists of a collimated lens).

That is, when light is transmitted through the optical fiber 55, the filter is filtered at the desired wavelength through the filter 58, the light is made in the lens 60, and the light is irradiated through the aperture 59, thereby allowing the die pattern DP to be exposed. It is possible to accurately expose the edge portion of the).

As shown in FIG. 8, since the light is formed in the aperture 59 in a predetermined shape as shown in FIG. 8, the light transmitted from the light is irradiated onto the wafer W in a blurry light state. When irradiated onto the wafer W while passing through the capturer 59, the light intensity (Intensity) of the center is large and weakened toward the outside due to divergence.

That is, if the shape of the light-converging point at which the light is formed on the wafer W is a quadrangle, the intensity of the light forming the inner quadrangle is the strongest and gradually weaker toward the outside, and the quadrangles are concentric with the center.

In the photoresist P exposure state of the wafer W through the light collecting point L, a portion of the photoresist P exposed and removed is formed in an inverted triangle.

That is, since the light intensity of the center portion is high and the intensity of the outer portion is weak, the photoresist P of the outer portion is partially exposed without being completely exposed, whereby the exposure state of the photoresist P becomes an inverted triangle. will be.

When the exposure state forms an inverted triangle, a slope (about 50 μm in width) is formed in a state in which the exposed portion is removed through the developing process.

However, when the slope is formed in the photoresist P due to the difference in light and light intensity during exposure / development as described above, the slope acts as a particle (pollutant) in the next step that proceeds sequentially, The die is contaminated, which causes a problem in that the die manufacturing yield of the wafer W is lowered.

Accordingly, an object of the present invention is to solve the above problems, and to collect the photoresist on the die pattern side during wafer edge exposure so that the photoresist does not remain in the form of a slope, condensing for wafer peripheral exposure apparatus that can improve the die manufacturing yield of the wafer In providing a device.

In order to realize the above object, a projector for a wafer peripheral exposure apparatus according to the present invention includes a housing configured to transmit light from an optical fiber, and a base configured to filter light transmitted from the optical fiber to a certain shape and wavelength, which is inherent in the housing and that is transmitted to the optical fiber. Peripheral exposure with a mask group formed by stacking a plurality of lenses in such a way that a mask is coated with a chromium film, except for the aperture portion formed on one side, and the light passing through the aperture portion is focused on the die pattern side of the wafer. In the projector for an apparatus, the aperture portion is formed by opening one side at a predetermined position of the mask to form an open end and closing the other side to form a closed end. The center of the closed end is the center of the lens group. It is installed in the same position as the optical axis of the imaging optical system, and the open end and the closed end and Between the center side is characterized by an illumination optical system configured to fulfill the optical axis is installed in the same location as the center of the optical fiber is installed in a predetermined position a predetermined distance away from the imaging optical system optical axis.

1 is a half sectional view showing a projector for a wafer peripheral exposure apparatus according to the present invention;

FIG. 2 is a plan view showing a state in which chromium is applied to a mask in FIG. 1;

3 is a cross-sectional view of FIG.

4 is a schematic perspective view showing a light condensing state in FIG. 1;

FIG. 5 is a schematic diagram showing the focusing state in FIG. 2 and the exposure state of the photoresist accordingly; FIG.

6 is a perspective view showing a general wafer peripheral exposure apparatus;

FIG. 7 is a cross-sectional view of the lens unit of FIG. 5; FIG.

Fig. 8 is a schematic diagram showing the focusing according to Fig. 7 and thus the photoresist exposure state;

＊ Explanation of symbols for main parts of drawing *

1: housing 2: mask

3: lens group 4: base

5: aperture portion 5a: open end

5b: closed end 6: chrome film

W: wafer P: photoresist

Z1: imaging optical system optical axis Z2: illumination optical system optical axis

Hereinafter, an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 5.

For reference, the same configuration and the same reference numerals are used for the same configuration as the conventional configuration, and a detailed description thereof will be omitted.

The projector of the light collecting device for a wafer peripheral exposure apparatus according to the present invention, as shown in Figs. 1 and 4, is a housing (1) configured to transmit light from the optical fiber (6), and is embedded in the housing (1) In addition, the mask 2 configured to filter the light transmitted from the optical fiber 6 to a certain shape and wavelength, and the light passing through the mask 2 to focus on the die pattern side of the wafer (W) It consists of the lens group 3 comprised by laminating | stacking the lenses.

As shown in FIGS. 2 and 3, the mask 2 is coated with a transparent base 4 made of glass and a rectangular aperture portion through which light is transmitted while not being transmitted through the base 4. It consists of the chromium film 6 which forms (5).

Here, the aperture portion 5a has an opening end 5a such that one end is opened from the center where the center side X1, Y, Z1 axis directions meet with respect to the flat surface of the mask 2 from the center to the outer peripheral side of the mask 2. ) And a closed end 5b having a closed end 5b, and cut off to a certain depth from the open end 5a of the one end, for example in the X1 axis direction when viewed in the drawing state of FIG. And the left and right ends connecting the opening end 5a and the closing end 5b correspond to each other with a predetermined interval of 1/2 at a Y-axis point crossing the center of the X1 axis of the closing end 5b. It is located in the Y axis direction, for example.

That is, the center O1 of the closed end 5b is installed at the same position as the center of the lens group 3 to form an imaging optical system optical axis Z1, and the open end 5a and the closed end 5b. Between the center O2 is installed at the same position as the center of the optical fiber 6 installed at a predetermined position spaced apart from the imaging optical system optical axis (Z1) to form an illumination optical system optical axis (Z2).

Therefore, in the prior art, although the wavelength of the light is selected by the filter 58 separately installed, the shape of the light is controlled through the aperture 59 formed in the housing 57. However, in the present invention, the glass mask 2 By coating the chromium film 6 to act as a filter and to allow light to pass through the aperture portion 5, it is possible to act as two members as one member.

Here, the lens group 3 is composed of a plurality of lenses, the light passing through the lens group 3 is the imaging optical system optical axis Z1 which is the best part of the lens group 3 as shown in FIG. The center line of the aperture portion 5 comes to improve the resolution of the important portion A focused on the die pattern side, and unlike the imaging optical axis Z1, the illumination optical system axis Z2 is different from that of the aperture portion 5. The light converging efficiency is increased in accordance with the center of the deflected portion O2.

Since the said linear light condensing part is located in the die pattern side, the slope is not formed in the photoresist P on the die pattern side.

That is, as shown in FIG. 5, when the light passing through the aperture 5 of the mask 2 becomes rectangular in shape according to the shape of the aperture 5, the light passes through the lens group 3. The image of the light formed on the B portion of the photoresist P is blurred, but the focus of the A portion is very clear, so that no slope is formed on the die pattern side of the photoresist P.

For example, when the light passing through the lens group 3 is focused on the die pattern side to form a light collecting point L ', the photoresist P on the die pattern side is exposed in a vertical line, and the other side is an angle of inclination. As becomes smaller, the inclined portion becomes larger.

When the photoresist P on the die pattern side is exposed in a vertical line, the residue (as a result of the inclined slope remaining) does not occur or hardly occurs on the die pattern side. The resist P will not act as a contaminant in the next process.

Of course, the slope is formed long at the portion other than the die pattern side, but since this portion is a portion where only the die pattern is used after exposure, the slope may be formed.

That is, only the die pattern side used substantially makes the photoresist P residue to the maximum.

Referring to the operation and effect of the present invention as described above, when the lamp W is turned on in the state in which the wafer W is seated on the conventional chuck, light is incident on the mask 2 through the optical fiber.

The light incident on the mask 2 is coated with chromium 6 and passes only a predetermined wavelength while passing through the mask 2 made of glass, and becomes a shape suitable for the shape of the aperture portion 5 of the mask 2. .

Light having a shape suitable for the shape of the aperture portion 5 is incident on the lens group 3, and is focused so as to be suitable for exposing the photoresist P of the wafer W from the lens group 3, and die The center of light (the strongest part of intensity) is deflected toward the pattern side.

When the center of light is deflected toward the die pattern side, the die pattern side shows a substantially vertical line when viewed from the exposure cross section of the photoresist P, and the opposite side forms a relatively long slope.

In addition, since the light passing through the lens group 3 is focused, the resolution is significantly improved compared to the conventional light.

As described above, according to the present invention, a projector for a wafer peripheral exposure apparatus has a closed end of an aperture formed in a mask located on the same axis as the optical axis of an imaging optical system of a lens group, and at the same time, the center of the aperture between the closed end and the open end of the aperture is Because it is structured to be located on the same axis as the illumination optical system optical axis of the optical system, focusing the light passing through the optical fiber and deflecting the die pattern side makes the exposure state of the die pattern side more uniform, as well as the post-exposure process. There is an advantage that can prevent the generation of particles (pollutants) in the.

Claims (1)

A housing 1 configured to transmit light from the optical fiber 6 and one side of the base 4 to filter the light transmitted from the optical fiber 6 to a predetermined shape and wavelength, which is inherent in the housing 1. A plurality of lenses such that the mask 2 having the remaining portion except the formed aperture portion 5 by the chrome film 6 and the light passing through the aperture portion 5 are focused to the die pattern side of the wafer W. In the projector for wafer peripheral exposure apparatus provided with the lens group 3 comprised by laminating | stacking, The aperture part 5 is formed by opening one side at a predetermined position of the mask 2 to form an open end 5a and closing the other side to form a closed end 5b. The center O1 of the closed end 5b is installed at the same position as the center of the lens group 3 to form an imaging optical system optical axis Z1. The center O2 between the opening end 5a and the closing end 5b is provided at the same position as the center of the optical fiber 6 installed at a predetermined position spaced apart from the imaging optical system Z1 by a predetermined distance. Projector for a wafer peripheral exposure apparatus, characterized in that configured to achieve the illumination optical system optical axis (Z2).