KR20010057710A - Device for clamping wafer for semiconductor reflow process - Google Patents
Device for clamping wafer for semiconductor reflow process Download PDFInfo
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- KR20010057710A KR20010057710A KR1019990061096A KR19990061096A KR20010057710A KR 20010057710 A KR20010057710 A KR 20010057710A KR 1019990061096 A KR1019990061096 A KR 1019990061096A KR 19990061096 A KR19990061096 A KR 19990061096A KR 20010057710 A KR20010057710 A KR 20010057710A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 리플로우 공정용 웨이퍼의 고정 장치에 관한 것으로서, 특히 열 전달 매체인 가스를 공급시킬 수 있는 복수의 가스 공급공을 갖춘 가열대; 상기 가열대 위에 배면 쪽으로 가스 열을 공급받을 수 있도록 안착되는 웨이퍼; 상기 웨이퍼의 상면 가장자리를 슬립되지 않게 누름 고정시키는 고정링부와, 상기 고정링부의 하단에 가스의 측면 누출을 막을 수 있도록 일체로 연장되는 쉴드부를 갖춘 고정 수단; 및 상기 고정 수단을 승강시킬 수 있는 승강 로드를 갖춘 실린더 수단을 포함한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer holding device for a semiconductor reflow process, and more particularly comprising: a heating table having a plurality of gas supply holes capable of supplying a gas, which is a heat transfer medium; A wafer seated on the heating table to receive gas heat toward the rear surface; Fixing means having a fixing ring portion for pressing and fixing the upper edge of the wafer so as not to slip and a shield portion integrally extending at a lower end of the fixing ring so as to prevent side leakage of gas; And a cylinder means having a lifting rod capable of lifting the fixing means.
따라서, 본 발명에 의하면 열 전달 매체인 가스가 측면 쪽으로 새어나가는 것을 막을 수 있게 함으로써 웨이퍼의 후면에 열을 집중적으로 고르게 공급할 수 있게 되므로 막질의 리플로우 성능을 향상시킬 뿐만 아니라 공정 소요 시간도 줄일 수 있다.Therefore, according to the present invention, it is possible to prevent the gas, which is a heat transfer medium, from leaking toward the side, thereby intensively supplying heat to the rear surface of the wafer, thereby improving the reflow performance of the film and reducing the process time. have.
Description
본 발명은 반도체 리플로우 공정용 웨이퍼의 고정 장치에 관한 것으로서, 보다 상세하게는 반도체 리플로우 공정용 웨이퍼의 고정 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer holding device for semiconductor reflow processes, and more particularly to a wafer holding device for semiconductor reflow processes.
반도체 제조 공정 중 스퍼터링(Sputtering) 공정은, 예를 들어, 알루미늄(Al)이나 티타늄(Ti) 등의 금속막을 반도체 웨이퍼(Wafer) 위에 증착시켜 전극이나 배선을 형성케 하는 공정이다. 즉, 불활성 기체인 아르곤(Ar) 가스가 존재하는 진공 챔버(Chamber) 속에서 양극과 음극사이에 고전압을 인가하면 플라즈마(Plasma)가 형성된다. 이 때, 강한 전기장 속에서 아르곤(Ar) 가스는 Ar+이나 Ar++으로 이온화된다. 상기 양(+) 이온들은 음(-)으로 대전된 타겟(Target)으로 가속되어 충돌을 일으키고, 이러한 충돌력에 의하여 타겟 재료, 예를 들어 알루미늄(Al)이나 티타늄(Ti) 원자를 튀어나오게 함으로써 웨이퍼 상에 얇은 막으로 증착시키는 것이다.The sputtering process is a process of depositing a metal film, such as aluminum (Al) or titanium (Ti), on a semiconductor wafer (Wafer) and forming an electrode or wiring in a semiconductor manufacturing process. That is, when a high voltage is applied between the anode and the cathode in a vacuum chamber in which argon (Ar) gas, which is an inert gas, exists, plasma is formed. At this time, argon (Ar) gas is ionized to Ar + or Ar ++ in a strong electric field. The positive ions are accelerated to a negatively charged target to cause a collision, and the collision force causes the target material, for example, aluminum or titanium atoms to protrude. It is deposited as a thin film on the wafer.
이러한 스퍼터링 공정을 거쳐 웨이퍼 상에 증착된 알루미늄(Al) 막질 등의 스텝 커버리지(Step Coverage)를 향상시키기 위하여, 이 알루미늄 막질을 대략 560 ℃ 이상 가열시켜 콘택(Contact) 사이에 잘 흘러 들어가도록 하는 공정이 더 필요하다. 이와 같은 공정 과정을 리플로우(Reflow) 공정이라 한다.In order to improve step coverage such as aluminum (Al) film deposited on the wafer through the sputtering process, the aluminum film is heated to about 560 ° C. or more to flow well between the contacts. I need more of this. This process is called a reflow process.
도 1 은 종래의 반도체 리플로우 공정용 웨이퍼의 고정 장치의 구성을 나타낸 단면도이다.BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows the structure of the conventional fixing apparatus of the wafer for semiconductor reflow processes.
도 1 에서 보면, 지지대(1) 상에 히터선(도시 생략)이 내장된 가열대(2)가 구비되고, 상기 가열대(2) 위에 웨이퍼(3)가 올려져 가열된다. 상기 가열대(2) 내부에는 복수의 가스 공급공(2a)이 형성되고, 여기를 통하여 아르곤(Ar) 가스가 웨이퍼(3)의 후면 쪽을 향하여 공급된다.As shown in FIG. 1, a heating table 2 having a heater wire (not shown) is provided on the support 1, and the wafer 3 is placed on the heating table 2 to be heated. A plurality of gas supply holes 2a are formed in the heating table 2, through which argon (Ar) gas is supplied toward the rear side of the wafer 3.
또한, 상기 웨이퍼(3)의 상면 가장자리에는 고정 수단으로써 고정 링(4)이 누름 고정케 되는데, 이 고정 링(4)은 승강 로드(5a)와 결합되어 실린더 수단(5)의 작동에 따라 승강할 수 있게 되어 있다.In addition, the fixing ring 4 is pushed and fixed to the upper edge of the wafer 3 as a fixing means, which is coupled with the lifting rod 5a to move in accordance with the operation of the cylinder means 5. I can do it.
상기 가열대(2) 둘레에는 원통 형태의 쉴드 부재(6)가 열을 분산시키지 않도록 소정 간격을 두고 지지대(1) 위에 배치된다.The cylindrical shield member 6 is disposed on the support 1 at intervals so as not to dissipate heat around the heating table 2.
이러한 종래의 리플로우 공정 설비의 구조는 가열대(2)의 온도에 의존하는 방식을 취하며, 특히 아르곤 가스에 의하여 가열대(2)의 온도를 웨이퍼(3)에 전달해주기 때문에 아르곤 가스가 가열대(2)의 온도를 얼마나 잘 전달해주는지 여부가 리플로우 공정에 중요한 기준이 된다.The structure of the conventional reflow process equipment takes a manner depending on the temperature of the heating table 2, and in particular, since the argon gas transfers the temperature of the heating table 2 to the wafer 3 by argon gas, the argon gas is heated. How well the temperature is delivered is a critical criterion for the reflow process.
그러나, 웨이퍼(3) 중심의 얼라인 상태나 고정 링(4)의 고정 상태에 따라 온도의 균일도에는 큰 차이가 날 수 있다.However, the temperature uniformity may vary greatly depending on the alignment state of the center of the wafer 3 or the fixing state of the fixing ring 4.
즉, 웨이퍼(3)가 제대로 안착 또는 고정되지 않게 되면, 도 1 에서 확대 도시한 바와 같이, 아르곤 가스가 쉴드 부재(6)의 상부 공간을 거쳐 외측면 쪽으로 빠져나가게 되므로 웨이퍼(3)의 후면에 집중되지 않게 된다. 따라서, 웨이퍼(3)에 전달되는 온도의 차이가 발생하게 되고, 그 만큼 리플로우 공정에 소요되는 시간도 많이 걸리게 된다.That is, when the wafer 3 is not properly seated or fixed, as shown in the enlarged view of FIG. 1, since the argon gas escapes toward the outer surface through the upper space of the shield member 6, the wafer 3 is disposed on the rear surface of the wafer 3. It will not be concentrated. Therefore, a difference in temperature to be delivered to the wafer 3 occurs, and the time required for the reflow process is increased accordingly.
따라서, 본 발명은 상술한 문제점을 해소하기 위하여 창작된 것으로서, 본발명의 목적은 열 전달 매체인 가스가 웨이퍼의 후면에 집중될 수 있도록 웨이퍼 고정 구조를 변경시킴으로써 리플로우 성능을 향상시킬 뿐만 아니라 공정 소요 시간도 줄일 수 있도록 하는 반도체 리플로우 공정용 웨이퍼의 고정 장치를 제공하는 데 있다.Accordingly, the present invention was created to solve the above-mentioned problems, and an object of the present invention is to improve the reflow performance by changing the wafer holding structure so that the gas, which is a heat transfer medium, can be concentrated on the back side of the wafer. SUMMARY OF THE INVENTION An object of the present invention is to provide a wafer holding device for semiconductor reflow processes that can reduce the time required.
도 1 은 종래의 반도체 리플로우 공정용 웨이퍼의 고정 장치의 구성을 나타낸 단면도.BRIEF DESCRIPTION OF THE DRAWINGS Sectional drawing which shows the structure of the conventional fixing device of the wafer for semiconductor reflow processes.
도 2 는 본 발명에 따른 반도체 리플로우 공정용 웨이퍼의 고정 장치를 나타낸 단면도.2 is a cross-sectional view showing a fixing device for a wafer for semiconductor reflow process according to the present invention.
도 3 은 본 발명의 반도체 리플로우 공정용 웨이퍼의 고정 장치의 작동 상태를 나타낸 단면도.3 is a cross-sectional view showing an operating state of a fixing device for a wafer for semiconductor reflow process of the present invention.
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
10 : 지지대, 20 : 가열대,10: support stand, 20: heating stand,
22 : 가스 공급공, 30 : 웨이퍼,22: gas supply hole, 30: wafer,
40 : 고정 수단, 42 : 고정링부,40: fixing means, 42: fixing ring portion,
44 : 쉴드부, 50 : 실린더 수단,44: shield portion, 50: cylinder means,
52 : 승강 로드.52: lifting rod.
이와 같은 목적을 달성하기 위한 본 발명에 따른 반도체 리플로우 공정용 웨이퍼의 고정 장치는, 열 전달 매체인 가스를 공급시킬 수 있는 복수의 가스 공급공을 갖춘 가열대; 상기 가열대 위에 배면 쪽으로 가스 열을 공급받을 수 있도록 안착되는 웨이퍼; 상기 웨이퍼의 상면 가장자리를 슬립되지 않게 누름 고정시키는 고정링부와, 상기 고정링부의 하단에 가스의 측면 누출을 막을 수 있도록 일체로 연장되는 쉴드부를 갖춘 고정 수단; 및 상기 고정 수단을 승강시킬 수 있는 승강 로드를 갖춘 실린더 수단을 포함하는 것을 특징으로 한다.According to an aspect of the present invention, there is provided a fixing apparatus for a wafer for a semiconductor reflow process, comprising: a heating table having a plurality of gas supply holes capable of supplying a gas that is a heat transfer medium; A wafer seated on the heating table to receive gas heat toward the rear surface; Fixing means having a fixing ring portion for pressing and fixing the upper edge of the wafer so as not to slip and a shield portion integrally extending at a lower end of the fixing ring so as to prevent side leakage of gas; And a cylinder means having a lifting rod capable of lifting the fixing means.
이하, 본 발명의 바람직한 실시예를 첨부된 도면에 의하여 더욱 상세히 설명한다.Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.
도 2 는 본 발명에 따른 반도체 리플로우 공정용 웨이퍼의 고정 장치를 나타낸 단면도이고, 도 3 은 본 발명의 반도체 리플로우 공정용 웨이퍼의 고정 장치의 작동 상태를 나타낸 단면도이다.2 is a cross-sectional view showing the fixing device of the wafer for semiconductor reflow process according to the present invention, Figure 3 is a cross-sectional view showing the operating state of the fixing device of the wafer for semiconductor reflow process of the present invention.
상기 도면에서, 지지대(10) 상에 히터선(도시 생략)이 내장된 가열대(2)가 구비되고, 상기 가열대(20) 상면에 웨이퍼(30)가 안착된다. 여기서, 상기 가열대(20) 내부에는, 예를 들어 아르곤(Ar) 가스와 같은 열 전달 매체를웨이퍼(30)의 후면 쪽을 향하여 공급시킬 수 있는 복수의 가스 공급공(22)이 수직 방향으로 복렬 형성된다.In the drawing, a heating table 2 having a heater wire (not shown) is provided on the support 10, and the wafer 30 is seated on an upper surface of the heating table 20. Here, in the heating table 20, a plurality of gas supply holes 22 capable of supplying a heat transfer medium such as argon (Ar) gas toward the rear side of the wafer 30 are arranged in a vertical direction. Is formed.
부호 40 은 웨이퍼(30)를 고정시킬 수 있는 고정 수단으로서, 이는 웨이퍼(30)의 상면 가장자리를 슬립(Slip)되지 않게 누름 고정시킬 수 있도록 수평으로 구비된 고정링부(42)와, 상기 고정링부(42)의 하단에 가스의 측면 누출을 막을 수 있도록 수직으로 일체로 형성된 쉴드부(44)로 구성된다. 이 쉴드부(44)는 중공의 원통 형상으로 이루어지고, 그 하단에 웨이퍼(30)를 이송 수단(도시 생략)에 의하여 로딩/언로딩시킬 수 있는 안내 홈(도시 생략)이 형성된다.Reference numeral 40 is a fixing means capable of fixing the wafer 30, which is provided with a holding ring portion 42 provided horizontally so as to press and fix the upper edge of the wafer 30 without slipping, and the holding ring portion. The lower portion of the 42 is composed of a shield 44 formed vertically integrally to prevent side leakage of the gas. The shield portion 44 has a hollow cylindrical shape, and a guide groove (not shown) for loading / unloading the wafer 30 by a transfer means (not shown) is formed at a lower end thereof.
상기 고정 수단(40)의 고정링부(42)의 양측면에는 승강 로드(52)가 관통 결합되고, 상기 승강 로드(52)는 실린더 수단(50)에 의하여 승강 작동될 수 있도록 결합된다.Lifting rods 52 are coupled to both sides of the fixing ring portion 42 of the fixing means 40, and the lifting rods 52 are coupled to be lifted and operated by the cylinder means 50.
이와 같이 구비된 본 발명에 따른 반도체 리플로우 공정용 웨이퍼의 고정 장치의 작동 관계를 도 2 및 도 3 을 참조하여 살펴본다.An operation relationship of the fixing apparatus for the wafer for semiconductor reflow process according to the present invention provided as above will be described with reference to FIGS. 2 and 3.
일정 온도로 가열되는 발열체인 가열대(20) 위에 웨이퍼(30)가 안착되면, 실린더 수단(50)의 승강 로드(52)가 하강 작동됨에 따라 고정링부(42)가 웨이퍼(30)의 가장자리를 슬립되지 않게 누름 고정시킨다.When the wafer 30 is seated on the heating table 20 which is a heating element heated to a predetermined temperature, the fixing ring 42 slips the edge of the wafer 30 as the lifting rod 52 of the cylinder means 50 is lowered. Press firmly so that
이 후, 가열대(20)의 가스 공급공(22)을 통하여 아르곤 가스와 같은 열 전달 매체가 웨이퍼(30)의 후면을 타고 상부 쪽으로 공급된다.Thereafter, a heat transfer medium such as argon gas is supplied to the upper portion through the back side of the wafer 30 through the gas supply hole 22 of the heating table 20.
이 때, 도 2 에서 확대 도시된 바와 같이, 웨이퍼(30)의 측면 쪽으로 흘러나오는 가스는 쉴드부(44)에 의하여 가로막혀 누설되지 않고 역시 상부 쪽으로 유도된다. 따라서, 공정 중에는 가스가 웨이퍼(30) 쪽에 집중적으로 열을 전달케 되므로 최대한의 짧은 시간에 공정을 효과적으로 수행할 수 있다.At this time, as shown enlarged in FIG. 2, the gas flowing out toward the side of the wafer 30 is not blocked by the shield 44 and is also leaked to the upper side. Therefore, during the process, since the gas transfers heat intensively toward the wafer 30, the process can be effectively performed in the shortest time possible.
한편, 리플로우 공정이 종료되면, 실린더 수단(50)의 작동에 따라 승강 로드(52)의 상승 작동에 수반하여 고정링부(42) 및 쉴드부(44)도 상승 작동됨으로써 웨이퍼(30)의 고정 상태가 해제된다.On the other hand, when the reflow process is completed, the fixing ring portion 42 and the shield portion 44 are also lifted up along with the lifting operation of the lifting rod 52 in accordance with the operation of the cylinder means 50 to fix the wafer 30. The state is released.
이 후, 가열대(20)에 내부에 매몰되어 있던 승강핀(60)이 웨이퍼(30)를 받쳐든 상태로 상승 동작되면, 도시되지 않은 로봇 이송수단의 포크부가 이송되어 웨이퍼(30)를 언로딩시키게 된다.Thereafter, when the lifting pin 60 embedded in the heating table 20 is lifted up while supporting the wafer 30, the fork portion of the robot transport means (not shown) is transferred to unload the wafer 30. Let's go.
상술한 본 발명에 의하면, 열 전달 매체인 가스가 측면 쪽으로 새어나가는 것을 막을 수 있게 함으로써 웨이퍼의 후면에 열을 집중적으로 고르게 공급할 수 있게 되므로 막질의 리플로우 성능을 향상시킬 뿐만 아니라 공정 소요 시간도 줄일 수 있다.According to the present invention described above, it is possible to prevent the gas, which is a heat transfer medium, from leaking toward the side, so that heat can be supplied intensively and uniformly on the back side of the wafer, thereby not only improving the reflow performance of the film but also reducing the time required for the process. Can be.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990061096A KR20010057710A (en) | 1999-12-23 | 1999-12-23 | Device for clamping wafer for semiconductor reflow process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990061096A KR20010057710A (en) | 1999-12-23 | 1999-12-23 | Device for clamping wafer for semiconductor reflow process |
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| Publication Number | Publication Date |
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| KR20010057710A true KR20010057710A (en) | 2001-07-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019990061096A Withdrawn KR20010057710A (en) | 1999-12-23 | 1999-12-23 | Device for clamping wafer for semiconductor reflow process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170069400A (en) * | 2015-12-11 | 2017-06-21 | 주식회사 선익시스템 | Chucking module and deposition apparatus of substrate having the same |
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1999
- 1999-12-23 KR KR1019990061096A patent/KR20010057710A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170069400A (en) * | 2015-12-11 | 2017-06-21 | 주식회사 선익시스템 | Chucking module and deposition apparatus of substrate having the same |
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