KR20000031240A - Arc chamber of equipment for injecting ion - Google Patents
Arc chamber of equipment for injecting ion Download PDFInfo
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- KR20000031240A KR20000031240A KR1019980047181A KR19980047181A KR20000031240A KR 20000031240 A KR20000031240 A KR 20000031240A KR 1019980047181 A KR1019980047181 A KR 1019980047181A KR 19980047181 A KR19980047181 A KR 19980047181A KR 20000031240 A KR20000031240 A KR 20000031240A
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- South Korea
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- arc chamber
- filament
- guide
- insulator
- ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
본 발명은, 전원이 공급되는 필라멘트를 보호하는 이온주입설비의 아크챔버에 관한 것으로서, 가스가 공급되는 가스공급관과 이온이 추출되는 추출구가 형성되어 있는 아크챔버의 일측에 형성된 두 개의 홀에 내삽되는 두 개의 절연체와 상기 절연체에 중심이 통공된 가이드가 관통되게 설치되고, 상기 가이드의 중심을 통해 필라멘트의 양단부가 각각 삽입되어 전원라인에 연결되어 이루어짐으로써 필라멘트가 가이드에 의해 고정되고, 가이드에 고정되는 긴밀도가 향상됨으로써 안정적인 전원공급이 이루어진다.The present invention relates to an arc chamber of an ion implantation facility that protects a powered filament, and interpolates into two holes formed at one side of an arc chamber in which a gas supply pipe to which gas is supplied and an extraction port from which ions are extracted are formed. Two insulators and guides having a center hole through the insulator are installed to penetrate, and both ends of the filament are respectively inserted through the center of the guide and connected to the power line to fix the filaments by the guides. As the long density is improved, stable power supply is achieved.
Description
본 발명은 이온주입설비의 아크챔버에 관한 것으로서, 보다 상세하게는 아크챔버에 설치되는 필라멘트를 보호하여 그 수명을 연장시키기 위한 이온주입설비의 아크챔버에 관한 것이다.The present invention relates to an arc chamber of an ion implantation equipment, and more particularly, to an arc chamber of an ion implantation equipment for protecting the filament installed in the arc chamber to extend its life.
이온주입설비는 소정 대상물에 불순물을 주입하는 설비로서, 불순물의 특성, 대상물의 표면으로부터의 깊이, 주입되는 이온의 양이 각각 고려되고, 그에 따른 에너지가 공급되어서 충분히 가속된 후 주입이 이루어진다. 이를 위해서는 이온빔을 제공하기 위한 가스가 공급되고, 가스상태의 소스를 이온으로 생성하는 이온소스가 설치된다.The ion implantation facility is a facility for injecting impurities into a predetermined object. The characteristics of the impurity, the depth from the surface of the object, and the amount of implanted ions are taken into consideration, respectively, and the implantation is performed after the energy is sufficiently accelerated. To this end, a gas for providing an ion beam is supplied, and an ion source for generating a gaseous source as ions is installed.
종래의 이온소스(100)의 구조는 도1에서 보는 바와 같이, 아크챔버(100)에 가스가 공급되는 가스공급관(12)이 형성되어 있고, 이온이 추출되는 추출구(14)가 형성되어 있다. 일측에는 두 개의 전원라인(16, 18)에 필라멘트(20)의 양단이 각각 연결되어 있고, 필라멘트(20)는 절연체(22)와 절연체(24, 26)에 의해 아크챔버(100)와 전기적으로 오픈되어 있다. 그리고, 필라멘트(20)의 상대측에는 절연체(28)에 의해 아크챔버(100)와 절연되도록 리플렉터(30)가 설치되어 있다.As shown in FIG. 1, the conventional ion source 100 has a gas supply pipe 12 through which gas is supplied to the arc chamber 100, and an extraction port 14 through which ions are extracted is formed. . Both ends of the filament 20 are connected to two power lines 16 and 18 on one side, and the filament 20 is electrically connected to the arc chamber 100 by the insulator 22 and the insulators 24 and 26. It is open. The reflector 30 is provided on the opposite side of the filament 20 so as to be insulated from the arc chamber 100 by the insulator 28.
전술한 바와 같이 이루어지는 종래의 이온소스(100)는 필라멘트(20)에서 제공되는 열전자가 가스공급관(12)에서 공급되는 가스와 반응하여 이온이 발생되고, 상기 이온은 도시하지 않은 추출기에 의해 이온빔의 형태로 추출되어 최종적으로 웨이퍼에 주입되도록 이루어진다.In the conventional ion source 100 formed as described above, ions are generated by the reaction of hot electrons provided from the filament 20 with the gas supplied from the gas supply pipe 12, and the ions are extracted by the extractor (not shown). It is extracted in form and finally injected into the wafer.
전원라인(16, 18)을 통해서는 5볼트 200암페어 정도의 전원이 필라멘트(20)로 공급되고, 이에 의해 필라멘트(20)에서 열전자가 방출된다. 상기 열전자는 가스공급관(12)을 통해 공급되는 BF3등의 가스와 충돌하여 이온이 발생되고, 발생된 이온은 추출기로 빔을 이루면서 공급된다.5 volts 200 amps of power are supplied to the filament 20 through the power lines 16 and 18, whereby hot electrons are emitted from the filament 20. The hot electrons collide with a gas such as BF 3 supplied through the gas supply pipe 12 to generate ions, and the generated ions are supplied while forming a beam to the extractor.
그런데, 필라멘트(20)와 아크챔버(100) 사이를 절연시키기 위해 절연체(22)와 절연체(24, 26)를 사용하였으나, 이들이 아크챔버(100)와 긴밀하게 고정되어 있지 않아서 필라멘트(20)에 전원공급시 힘의 분배가 일정하지 않아서 필라멘트(20)가 고열에 의한 스트레스(stress)로 인해 전원라인(16, 18)과 접촉이 불량해지고, 필라멘트(20)가 휘어지는 현상이 발생되었다. 그래서 결국 필라멘트(20)가 깨지거나, 휘어져서 절연체(22, 24, 26)에 무리한 힘이 걸려서 수명이 단축되는 문제점이 있었다.By the way, although the insulator 22 and the insulators 24 and 26 were used to insulate between the filament 20 and the arc chamber 100, they are not closely fixed to the arc chamber 100, so that the filament 20 Since the power distribution is not constant during power supply, the filament 20 is in poor contact with the power lines 16 and 18 due to stress due to high heat, and the filament 20 is bent. As a result, the filament 20 is broken or bent, so that an excessive force is applied to the insulators 22, 24, and 26.
본 발명의 목적은, 필라멘트가 아크챔버에 결합되는 긴밀도를 높이고, 손상이 방지되도록 하는 가이드를 구비한 이온주입설비의 아크챔버를 제공하는 데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide an arc chamber of an ion implantation apparatus having a guide for increasing the long density of filament bonded to the arc chamber and preventing damage.
도1은 종래의 이온소스를 이루는 아크챔버를 나타내는 도면이다.1 is a view showing an arc chamber forming a conventional ion source.
도2는 본 발명에 따른 이온주입설비의 아크챔버의 실시예를 나타내는 도면이다.2 is a view showing an embodiment of the arc chamber of the ion implantation equipment according to the present invention.
도3은 도2의 'A' 부분을 확대한 도면이다.3 is an enlarged view of a portion 'A' of FIG. 2.
※ 도면의 주요 부분에 대한 부호의 설명※ Explanation of codes for main parts of drawing
10, 40 : 아크챔버(Arc chamber) 12 : 가스공급관10, 40: arc chamber 12: gas supply pipe
14 : 추출구 16, 18 : 전원라인14: outlet 16, 18: power line
20 : 필라멘트(filament) 22, 24, 26, 28, 42 : 절연체20: filament 22, 24, 26, 28, 42: insulator
30 : 리플렉터(reflector) 44 : 가이드(guide)30: reflector 44: guide
100, 200 : 이온소스100, 200: ion source
상기 목적을 달성하기 위한 본 발명에 따른 이온주입설비의 아크챔버는, 아크챔버에 설치된 필라멘트의 양단이 각각 전원에 연결되고, 상기 필라멘트로부터 열전자가 방출되어 공급되는 가스를 이온화시키는 이온주입설비의 아크챔버에 있어서, 양단부가 상기 아크챔버를 관통하며 중심이 통공된 가이드에 상기 필라멘트가 삽입되어 고정되고, 상기 아크챔버와 상기 가이드를 절연시키는 절연체가 구비되어 이루어지며, 상기 가이드는 나사산이 외주면에 형성되어 상기 절연체를 관통하는 볼트로 이루어진다.The arc chamber of the ion implantation equipment according to the present invention for achieving the above object, the both ends of the filament installed in the arc chamber is connected to the power source, the arc of the ion implantation equipment to ionize the gas supplied by the release of hot electrons from the filament In the chamber, both ends of the filament is inserted and fixed to the guide through which the center passes through the arc chamber, the insulation is insulated between the arc chamber and the guide is provided, the guide is formed on the outer peripheral surface And made of bolts passing through the insulator.
이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다. 도2에 도시된 바와 같은 동일부호에 대한 동일물의 설명은 도1에 따르고, 이에 대한 상세한 설명은 생략한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Description of the same reference numerals as shown in FIG. 2 is according to FIG. 1, and detailed description thereof will be omitted.
도2를 참조하면, 이온소스(200)를 이루는 아크챔버(40)에는 가스공급관(12)과 추출구(14)가 형성되어 있다. 일측에는 아크챔버(40)에 내삽되는 두 개의 구멍을 통해 가이드(44)가 각각 삽입되어 있고, 가이드(44)와 아크챔버(40) 사이에는 절연체(42)가 설치되어 있다. 가이드(44)의 외주면은 나사산이 형성되어 있는 볼트형태로 이루어져서 절연체(42)에 삽입되어 관통된다.Referring to FIG. 2, a gas supply pipe 12 and an extraction port 14 are formed in the arc chamber 40 constituting the ion source 200. Guides 44 are inserted through two holes inserted into the arc chamber 40 at one side, and an insulator 42 is provided between the guide 44 and the arc chamber 40. The outer circumferential surface of the guide 44 is formed in the form of a bolt in which a thread is formed and is inserted into the insulator 42 and penetrated therethrough.
가이드(44)는 중심이 통공되어서 필라멘트(20)가 삽입되고, 필라멘트(20)의 양단은 전원라인(16, 18)에 각각 연결되어 있다. 그리고, 필라멘트(20)와 마주보는 면에는 리플렉터(30)가 절연체(28)에 삽입되어 아크챔버(40)와 절연되도록 설치되어 있다.The guide 44 has a center hole through which the filament 20 is inserted, and both ends of the filament 20 are connected to the power lines 16 and 18, respectively. The reflector 30 is inserted into the insulator 28 on the surface facing the filament 20 so as to be insulated from the arc chamber 40.
전술한 바와 같이 구성된 본 발명에 따른 실시예는, 필라멘트(20)에 전원이 공급되고, 가스가 공급되면 필라멘트(20)에서 발생되는 열전자에 의해 이온이 발생된다. 그러면 이온화된 양이온은 도시하지 않은 추출기에 의해 이온빔으로 추출된다. 그리고, 가이드(44)를 관통하여 설치되어 있는 필라멘트(20)로는 전원라인(16, 18)이 연결되어 가이드(44)에 지지되어 있다.In the embodiment according to the present invention configured as described above, the power is supplied to the filament 20, the ion is generated by the hot electrons generated in the filament 20 when the gas is supplied. The ionized cations are then extracted into the ion beam by an extractor, not shown. The power lines 16 and 18 are connected to the filament 20 provided through the guide 44 and are supported by the guide 44.
필라멘트(20)가 가이드(44)에 삽입되어 고정되는 것을 나타내고, 도2의 'A' 부분을 확대한 도3을 참조하여 더욱 상세히 설명한다.The filament 20 is inserted into and fixed to the guide 44, and will be described in more detail with reference to FIG. 3 in which the portion 'A' of FIG. 2 is enlarged.
도3에 의하면, 아크챔버(40)의 내/외측에 절연체(42)가 설치되고, 절연체(42)에 삽입되는 가이드(44)의 외주면이 나사산(46)을 갖는 볼트형태로 이루어져서 고정된다. 가이드(44)의 중심이 통공된 홀(48)을 통해 필라멘트(20)가 삽입되어 고정지지되어 있음을 볼 수 있다.3, the insulator 42 is provided inside / outside the arc chamber 40, and the outer circumferential surface of the guide 44 inserted into the insulator 42 is fixed in the form of a bolt having a thread 46. As shown in FIG. It can be seen that the filament 20 is inserted and fixed through the hole 48 through which the center of the guide 44 is inserted.
즉, 가이드(44)는 절연체(42)에 의해 양방향에서 고정시켜 주므로 아크챔버(40)에 밀착되게 고정될 수 있다. 또한, 가이드(44)에 삽입되는 필라멘트(20)도 마찬가지로 아크챔버(40)에 내삽되는 가이드(44)를 관통하여 고정지지됨으로써 전원공급시 발생되는 스트레스(stress)로부터 필라멘트(20)를 보호할 수 있고, 가이드(44)에 의해 충분히 고정됨으로써 전원공급시 안정적인 전원공급을 유도할 수 있어서 필라멘트(20)의 수명이 연장되는 효과를 얻을 수 있다.That is, since the guide 44 is fixed in both directions by the insulator 42, the guide 44 may be fixed in close contact with the arc chamber 40. In addition, the filament 20 inserted into the guide 44 is also fixed to the guide 44 inserted into the arc chamber 40 to be secured to protect the filament 20 from stress generated during power supply. By being sufficiently fixed by the guide 44, it is possible to induce a stable power supply during power supply, thereby obtaining the effect of extending the life of the filament 20.
따라서, 본 발명에 의하면 필라멘트가 가이드에 의해 아크챔버에 결합되고, 가이드에 고정되는 긴밀도가 향상됨으로써 안정적인 전원공급이 이루어지는 효과가 있다.Therefore, according to the present invention, the filament is coupled to the arc chamber by the guide, and the long density fixed to the guide is improved, thereby providing a stable power supply.
이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980047181A KR20000031240A (en) | 1998-11-04 | 1998-11-04 | Arc chamber of equipment for injecting ion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980047181A KR20000031240A (en) | 1998-11-04 | 1998-11-04 | Arc chamber of equipment for injecting ion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20000031240A true KR20000031240A (en) | 2000-06-05 |
Family
ID=19557156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980047181A Withdrawn KR20000031240A (en) | 1998-11-04 | 1998-11-04 | Arc chamber of equipment for injecting ion |
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| KR (1) | KR20000031240A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020078684A (en) * | 2001-04-07 | 2002-10-19 | 한국에너지기술연구원 | In sulation and pressure seal apparatus for a power supply in pressurized vessel |
| KR20030070992A (en) * | 2002-02-27 | 2003-09-03 | 삼성전자주식회사 | Filament Insulator At Semiconductor Implanter Equipment |
| CN111128650A (en) * | 2018-10-30 | 2020-05-08 | 中国电子科技集团公司第四十八研究所 | Directly-heated solid metal ion source |
-
1998
- 1998-11-04 KR KR1019980047181A patent/KR20000031240A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020078684A (en) * | 2001-04-07 | 2002-10-19 | 한국에너지기술연구원 | In sulation and pressure seal apparatus for a power supply in pressurized vessel |
| KR20030070992A (en) * | 2002-02-27 | 2003-09-03 | 삼성전자주식회사 | Filament Insulator At Semiconductor Implanter Equipment |
| CN111128650A (en) * | 2018-10-30 | 2020-05-08 | 中国电子科技集团公司第四十八研究所 | Directly-heated solid metal ion source |
| CN111128650B (en) * | 2018-10-30 | 2022-05-31 | 中国电子科技集团公司第四十八研究所 | A direct heating solid metal ion source |
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