KR102862818B1 - Hybrid switch device using super capacitor and battery - Google Patents

Abstract

A hybrid switch device is disclosed. The switch device according to the present disclosure includes: a sensor connected to a circuit and sensing various variable values; a current-limiting resistor for controlling the amount of current flowing in the circuit; an NMOS (N-type Metal-Oxide-Semiconductor Field-Effect Transistor) that functions as a switch for allowing or cutting off current to flow in the circuit; a power supply unit that supplies electrical energy to the circuit and includes a battery and a super capacitor; a memory that stores at least one instruction; and a processor connected to the memory and executing at least one instruction; wherein the processor controls the flow of current in the circuit based on the discharge of at least one of the battery and the super capacitor included in the power supply unit, and can control the flow of current flowing in the circuit by applying a preset voltage to the gate of the NMOS based on the sensed value of the sensor.

Description

Hybrid Switch Device Using Super Capacitor and Battery

The present disclosure relates to a circuit switch device including an NMOS, and more particularly, to a hybrid switch device that receives energy from a power source including a super capacitor and a battery and applies voltage to an NMOS according to a sensing value of a sensor, thereby allowing or blocking current to flow in a circuit.

MOSFET stands for Metal-Oxide-Semiconductor Field-Effect Transistor, and basically acts like a switch that allows or blocks current to flow through a circuit depending on the gate voltage.

A MOSFET is a structure that adds a source and drain to the MOS capacitor structure. The source and drain can be N-type or P-type semiconductors, and the source and drain form a p-n junction structure in the MOSFET.

MOSFETs are divided into N-type MOSFETs and P-type MOSFETs depending on the type of source, drain, and body. In the case of N-type MOSFETs, electrons become carriers, causing current to flow in the circuit, while in the case of P-type MOSFETs, holes become carriers, causing current to flow in the circuit.

In the case of an N-type MOSFET, electrons are supplied from the source and drain, so an inversion layer can be formed quickly, and when a voltage higher than the threshold voltage is applied to the gate, a MOS inversion layer is formed, which is called a channel in MOSFET.

Supercapacitors are energy storage devices typically comprised of porous electrodes and a structure containing ions dissolved in an organic electrolyte. Unlike secondary batteries, which charge and discharge through chemical reactions of ions, supercapacitors typically utilize the physical adsorption and desorption of electrons attached to activated carbon to charge and discharge.

Supercapacitors have relatively low energy density, so their energy storage and charging capacity are not large, but they have the advantage of being able to produce high-output energy in an instant and having a relatively long lifespan.

There is a need to provide a system that receives current from a power supply unit including a super capacitor within a circuit structure including a current limiting resistor and a switch (NMOS) and performs circuit switching control in conjunction with current, voltage, and temperature sensors more smoothly and efficiently through an MCU (Micro Controlling Unit).

The purposes of the present disclosure are not limited to those mentioned above, and other purposes and advantages of the present disclosure not mentioned above can be understood through the following description and will be more clearly understood through the embodiments of the present disclosure. Furthermore, it will be readily apparent that the purposes and advantages of the present disclosure can be realized by the means and combinations thereof set forth in the claims.

A hybrid switch device according to the present embodiment comprises: a sensor connected to a circuit and sensing various variable values; a current limiting resistor for controlling the amount of current flowing in the circuit; an NMOS (N-type Metal-Oxide-Semiconductor Field-Effect Transistor) that functions as a switch for allowing or cutting off current to flow in the circuit; a power supply unit that supplies electric energy to the circuit and includes a battery and a super capacitor; a memory that stores at least one instruction; and a processor connected to the memory and executing at least one instruction; wherein the processor controls the flow of current in the circuit based on the discharge of at least one of the battery and the super capacitor included in the power supply unit, and controls the flow of current flowing in the circuit by applying a preset voltage to a gate of the NMOS based on a sensing value of the sensor.

Meanwhile, if the processor determines that the charge level of the battery included in the power supply is less than a preset value, it can control current to flow through the circuit based on the discharge of the super capacitor.

Meanwhile, the processor may control current to flow in the circuit based on the discharge of the supercapacitor for a preset period of time when a preset voltage is applied to the gate of the NMOS in a state where no current flows in the circuit, and control current to flow in the circuit based on the discharge of the battery when the preset period of time has elapsed.

Meanwhile, the sensor is a current sensor that senses the amount of current flowing in the circuit, and the processor identifies the amount of current flowing in the circuit based on the sensed value of the current sensor, and if the amount of current flowing in the circuit is greater than a preset value, can control the circuit so that no current flows by applying a preset voltage to the gate of the NMOS.

Meanwhile, the sensor is a temperature sensor, and the processor identifies the temperature based on the sensing value of the temperature sensor, and if the temperature is higher than a first preset value, controls the circuit so that no current flows by applying a preset voltage to the gate of the NMOS.

Meanwhile, the sensor is a temperature sensor, and the processor can identify the temperature based on the sensing value of the temperature sensor, and if the temperature is lower than a second preset value, control the circuit so that no current flows by applying a preset voltage to the gate of the NMOS.

Meanwhile, the sensor is a voltage sensor, and the processor can identify a voltage based on a sensing value of the voltage sensor, and if the voltage is higher than a preset value, control the circuit so that no current flows by applying a preset voltage to the gate of the NMOS.

By supplying current from a power supply including a battery and a super capacitor, the circuit switching control can be performed more smoothly and efficiently through the MCU by linking with each sensor for current, voltage, and temperature.

Aspects, features and advantages of specific embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings.
FIG. 1 is a circuit diagram illustrating an MCU of a hybrid switch device according to an embodiment of the present disclosure.
FIG. 2 is a block diagram illustrating the configuration of an MCU according to one embodiment of the present disclosure.
FIG. 3 is a flowchart illustrating the operation of a switch device according to an embodiment of the present disclosure.
FIG. 4 is a drawing for explaining a power supply unit including a battery and a super capacitor according to one embodiment of the present disclosure.
FIG. 5 is a diagram for explaining the operation of a switch device that controls current flow in a circuit based on a current sensing value according to one embodiment of the present disclosure.
FIG. 6 is a diagram for explaining the operation of a switch device that controls current flow in a circuit based on a temperature sensing value according to one embodiment of the present disclosure.
FIG. 7 is a diagram for explaining the operation of a switch device that controls current flow in a circuit based on a temperature sensing value according to one embodiment of the present disclosure.
FIG. 8 is a diagram for explaining the operation of a switch device that controls current flow in a circuit based on a voltage sensing value according to one embodiment of the present disclosure.

The present embodiments may be modified and have various embodiments. Specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the scope to specific embodiments, but should be understood to encompass various modifications, equivalents, and/or alternatives of the embodiments of the present disclosure. In connection with the description of the drawings, similar reference numerals may be used for similar components.

In describing the present disclosure, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present disclosure, a detailed description thereof will be omitted.

Additionally, the following embodiments may be modified in various other forms, and the scope of the technical concepts of the present disclosure is not limited to the following embodiments. Rather, these embodiments are provided to further faithfully and completely convey the technical concepts of the present disclosure to those skilled in the art.

The terminology used in this disclosure is for the purpose of describing specific embodiments only and is not intended to limit the scope of the rights. Singular expressions include plural expressions unless the context clearly dictates otherwise.

In this disclosure, expressions such as “has,” “can have,” “includes,” or “may include” indicate the presence of a corresponding feature (e.g., a component such as a number, function, operation, or part), and do not exclude the presence of additional features.

In this disclosure, expressions such as “A or B,” “at least one of A and/or B,” or “one or more of A or/and B” can include all possible combinations of the listed items. For example, “A or B,” “at least one of A and B,” or “at least one of A or B” can all refer to (1) including at least one A, (2) including at least one B, or (3) including both at least one A and at least one B.

The expressions “first,” “second,” “first,” or “second,” etc., used in this disclosure can describe various components, regardless of order and/or importance, and are only used to distinguish one component from another, but do not limit the components.

When it is said that a component (e.g., a first component) is “(operatively or communicatively) coupled with/to” or “connected to” another component (e.g., a second component), it should be understood that the component may be directly coupled to the other component, or may be connected through another component (e.g., a third component).

On the other hand, when it is said that a component (e.g., a first component) is "directly connected" or "directly connected" to another component (e.g., a second component), it can be understood that no other component (e.g., a third component) exists between the component and the other component.

The expression "configured to" as used in the present disclosure may be used interchangeably with, for example, "suitable for," "having the capacity to," "designed to," "adapted to," "made to," or "capable of." The term "configured to" may not necessarily mean only "specifically designed to" in terms of hardware.

Instead, in some contexts, the phrase "a device configured to" may mean that the device, in conjunction with other devices or components, is "capable of" performing A, B, and C. For example, the phrase "a processor configured (or set) to perform A, B, and C" may refer to a dedicated processor (e.g., an embedded processor) for performing those operations, or a general-purpose processor (e.g., a CPU or application processor) that can perform those operations by executing one or more software programs stored in a memory device.

In the embodiments, a 'module' or 'part' performs at least one function or operation, and may be implemented as hardware or software, or as a combination of hardware and software. Furthermore, a plurality of 'modules' or 'parts' may be integrated into at least one module and implemented as at least one processor, except for a 'module' or 'part' that needs to be implemented as a specific hardware.

Meanwhile, the various elements and areas in the drawings are schematically drawn. Therefore, the technical concept of the present invention is not limited by the relative sizes or spacing depicted in the attached drawings.

Hereinafter, with reference to the attached drawings, embodiments according to the present disclosure will be described in detail so that a person having ordinary knowledge in the technical field to which the present disclosure pertains can easily implement the present disclosure.

FIG. 1 is a circuit diagram illustrating an MCU of a hybrid switch device according to an embodiment of the present disclosure.

Referring to FIG. 1, a hybrid switch device may include a sensor (110) that is connected to a circuit and senses various variable values, a current limiting resistor (120) that controls the amount of current flowing in the circuit, an NMOS (130) (N-type MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)) that functions as a switch for allowing or cutting off current to flow in the circuit, a power supply unit (140) that supplies electric energy to the circuit and includes a battery (140-1) and a super capacitor (140-1), a memory (12) that stores at least one instruction, and a processor (13) that is connected to the memory (12) and executes at least one instruction. Here, the memory (12) and the processor (13) may be included in an MCU (150) (Mirco Controlling Unit).

However, the configuration of the hybrid switch device is not limited to this, and may include additional configurations or omit some configurations.

FIG. 2 is a block diagram illustrating the configuration of an MCU (150) according to one embodiment of the present disclosure.

Referring to FIG. 2, the MCU (150) may include a communication interface (11), a memory (12), and a processor (13). Here, the processor (13) may include a voltage application module (13-1), a power supply (140) control module (13-2), a sensing value calculation module (13-3), etc.

However, the configuration of the MCU (150) and the processor (13) is not limited to what was described above, and some configurations may be omitted or additional configurations may be included.

The communication interface (11) may include a wireless communication interface (11), a wired communication interface (11), or an input interface. The wireless communication interface (11) may communicate with various external devices using wireless communication technology or mobile communication technology. Examples of such wireless communication technologies may include Bluetooth, Bluetooth Low Energy, CAN communication, Wi-Fi, Wi-Fi Direct, ultra-wide band (UWB), Zigbee, infrared Data Association (IrDA), or near field communication (NFC), and examples of mobile communication technologies may include 3GPP, Wi-Max, LTE (Long Term Evolution), 5G, etc.

The wireless communication interface (11) can be implemented using an antenna, communication chip, substrate, etc. that can transmit electromagnetic waves to the outside or receive electromagnetic waves transmitted from the outside.

The wired communication interface (11) can communicate with various devices based on a wired communication network. Here, the wired communication network can be implemented using physical cables such as a pair cable, a coaxial cable, a fiber optic cable, or an Ethernet cable, for example.

The wireless communication interface (11) and the wired communication interface (11) may be omitted depending on the embodiment. Accordingly, the electronic device may include only the wireless communication interface (11) or only the wired communication interface (11). In addition, the electronic device may have an integrated communication interface (11) that supports both wireless connection via the wireless communication interface (11) and wired connection via the wired communication interface (11).

The electronic device is not limited to including one communication interface (11) that performs one type of communication connection, but may include multiple communication interfaces (11) that perform multiple types of communication connections.

The processor (13) can transmit and receive various information, data, and signals by performing a communication connection with an external server or external device through a communication interface (11).

Specifically, the processor (13) can perform a communication connection with an external server or external device through a communication interface (11) to transmit and receive information about sensing values, information about current amount, etc.

The memory (12) temporarily or non-temporarily stores various programs or data, and transmits the stored information to the processor (13) according to a call from the processor (13). In addition, the memory (12) can store various information necessary for the calculation, processing, or control operations of the processor (13) in an electronic format.

The memory (12) may include, for example, at least one of a main memory and an auxiliary memory. The main memory may be implemented using a semiconductor storage medium such as ROM and/or RAM. The ROM may include, for example, a conventional ROM, EPROM, EEPROM, and/or MASK-ROM. The RAM may include, for example, DRAM and/or SRAM. The auxiliary memory may be implemented using at least one storage medium capable of permanently or semi-permanently storing data, such as a flash memory (12) device, an SD (Secure Digital) card, a solid state drive (SSD), a hard disk drive (HDD), an optical media such as a magnetic drum, a compact disc (CD), a DVD, or a laser disc, a magnetic tape, a magneto-optical disc, and/or a floppy disk.

The memory (12) can store information about sensing values, information about current amount, etc.

The processor (13) controls the overall operation of the electronic device. Specifically, the processor (13) is connected to the configuration of the electronic device including the memory (12) as described above, and can control the overall operation of the electronic device by executing at least one instruction stored in the memory (12) as described above. In particular, the processor (13) may be implemented not only as a single processor (13) but also as a plurality of processors (13).

The processor (13) may be implemented in various ways. For example, one or more processors (13) may include one or more of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), an APU (Accelerated Processing Unit), a MIC (Many Integrated Core), a DSP (Digital Signal Processor), an NPU (Neural Processing Unit), a hardware accelerator, or a machine learning accelerator. The one or more processors (13) may control one or any combination of other components of the electronic device, and may perform operations related to communication or data processing. The one or more processors (13) may execute one or more programs or instructions stored in the memory (12). For example, the one or more processors (13) may perform a method according to an embodiment of the present disclosure by executing one or more instructions stored in the memory (12).

When a method according to an embodiment of the present disclosure includes a plurality of operations, the plurality of operations may be performed by one processor (13) or may be performed by a plurality of processors (13). For example, when a first operation, a second operation, and a third operation are performed by a method according to an embodiment, the first operation, the second operation, and the third operation may all be performed by the first processor (13), or the first operation and the second operation may be performed by the first processor (13) (e.g., a general-purpose processor (13)) and the third operation may be performed by the second processor (13) (e.g., an artificial intelligence-only processor (13)).

One or more processors (13) may be implemented as a single core processor (13) including one core, or may be implemented as one or more multi-core processors (13) including multiple cores (e.g., homogeneous multi-cores or heterogeneous multi-cores). When one or more processors (13) are implemented as a multi-core processor (13), each of the multiple cores included in the multi-core processor (13) may include an internal memory (12) of the processor (13), such as an on-chip memory (12), and a common cache shared by the multiple cores may be included in the multi-core processor (13). In addition, each of the multiple cores (or some of the multiple cores) included in the multi-core processor (13) may independently read and execute a program instruction for implementing a method according to an embodiment of the present disclosure, or all (or some) of the multiple cores may be linked to read and execute a program instruction for implementing a method according to an embodiment of the present disclosure.

When a method according to an embodiment of the present disclosure includes a plurality of operations, the plurality of operations may be performed by one core among the plurality of cores included in the multi-core processor (13), or may be performed by the plurality of cores. For example, when a first operation, a second operation, and a third operation are performed by the method according to an embodiment, the first operation, the second operation, and the third operation may all be performed by the first core included in the multi-core processor (13), or the first operation and the second operation may be performed by the first core included in the multi-core processor (13), and the third operation may be performed by the second core included in the multi-core processor (13).

In embodiments of the present disclosure, the processor (13) may mean a system on a chip (SoC) in which one or more processors (13) and other electronic components are integrated, a single-core processor (13), a multi-core processor (13), or a core included in a single-core processor (13) or a multi-core processor (13), wherein the core may be implemented as a CPU, a GPU, an APU, a MIC, a DSP, an NPU, a hardware accelerator, or a machine learning accelerator, but embodiments of the present disclosure are not limited thereto.

The processor (13) is connected to the above-described configuration and can obtain various information, signals, and data, and can control each configuration by executing at least one instruction.

The processor (13) can control the voltage application module (13-1) to adjust the magnitude of the voltage applied to the NMOS (130). The processor (13) can control the power supply (140) control module (13-2) to receive power from the power supply (140) including the battery (140-1) and the super capacitor (140-1). The processor (13) can control the sensing value calculation module (13-3) to perform a calculation based on the sensing value obtained from the sensor (110).

FIG. 3 is a flowchart for explaining the operation of a switch device according to one embodiment of the present disclosure.

Referring to FIG. 3, the processor (13) can control current to flow in the circuit based on the discharge of at least one of the battery (140-1) and the super capacitor (140-1) included in the power supply (140) (S310).

The processor (13) can control the flow of current flowing in the circuit by applying a preset voltage to the gate of the NMOS (130) based on the sensing value of the sensor (110) (S320).

At this time, the target specifications are as follows.

-Input: LIB (48V) Wide input range considered, 100Vdc or less

-Output: 36V~42V / max 20A / 500W

-Control: Supply S.C. energy to the load through LIB or P/S side current limit.

Stable power supply to the load through semiconductor SW (MOSFET) operation after S.C discharge

The optimal semiconductor SW operating time must be determined through simulation.

-Environment: Room temperature conditions (1~35℃)

Additionally, the operating power and load are as follows.

-Operating power: 20~50V Ext. power is provided using a converter & LDO to provide 3.3V control power and 10V or more MOSFET Gate Driver power.

-Current limiting resistor: Use by connecting with a resistor of 2W or more.

-Semiconductor SW: FDMS86250 (5A / 100V) Parallel connection increases power output

-Backup time: Comobike (1~4s) / Simulation required

FIG. 4 is a drawing for explaining a power supply unit (140) including a battery (140-1) and a super capacitor (140-1) according to one embodiment of the present disclosure.

Referring to FIG. 4, the processor (13) can control the power supply (140) control module (13-2) to discharge at least one of the battery (140-1) and the super capacitor (140-1) included in the power supply (140) so that current flows through the circuit.

Specifically, when it is identified that the charge amount of the battery (140-1) included in the power supply (140) is less than a preset value, the processor (13) can control current to flow in the circuit based on the discharge of the super capacitor (140-1). That is, when the charge amount of the battery (140-1) is insufficient, there is an effect of allowing current to flow in the circuit by using the super capacitor (140-1) as an alternative power source.

The power supply unit (140) may include, but is not limited to, one or more super capacitor (140-1) cells, an inverter, a charge/discharge module, etc.

Here, the battery (140-1) may be a secondary battery such as a lithium ion battery (140-1), but is not limited thereto.

Here, the supercapacitor (140-1) may be composed of a separator and an electrolyte located between two facing electrodes. The electrodes, electrolyte, and separator of the supercapacitor (140-1) may be located inside the housing.

A supercapacitor (140-1) can be charged and discharged through a process in which ions of the electrolyte are adsorbed and desorbed on the electrode surface or through a surface chemical reaction.

As a type of supercapacitor (140-1), it may be an electrical double layer capacitor (EDLC) that operates by adsorption and desorption of ions on the electrode surface, a supercapacitor involving a surface chemical reaction, a pseudocapacitor, or a hybrid supercapacitor that appropriately mixes the characteristics of these using an asymmetric electrode.

An electric double layer capacitor may have each electrode made of a porous carbon electrode, a pseudocapacitor may include electrodes made of a pseudocapacitive material that can act as electrodes, and a hybrid capacitor may include both porous carbon electrodes and electrodes made of a pseudocapacitive material.

However, the type, configuration and operating principle of the super capacitor (140-1) are not limited to those described above, and the super capacitor (140-1) may be configured and operated in various ways.

According to various embodiments, when a preset voltage is applied to the gate of an NMOS (130) in a state where no current flows in the circuit, and current flows in the circuit, the processor (13) can control current to flow in the circuit based on the discharge of the supercapacitor (140-1) for a preset period of time. When the preset period of time has elapsed, the processor (13) can control current to flow in the circuit based on the discharge of the battery (140-1).

Since an instantaneous power supply is required when the current is to be restarted from a state where it is not flowing, a super capacitor (140-1) with a fast discharge rate can be used to supply power first in the early stage to enable efficient and immediate circuit operation.

FIG. 5 is a diagram for explaining the operation of a switch device that controls current flow in a circuit based on a current sensing value according to one embodiment of the present disclosure.

Referring to FIG. 5, the sensor (110) may be a current sensor (110-1) that senses the amount of current flowing in the circuit.

The processor (13) can control current to flow in the circuit based on the discharge of at least one of the battery (140-1) and the super capacitor (140-1) included in the power supply (140) (S510).

The processor (13) can identify the amount of current flowing in the circuit based on the sensing value of the current sensor (110-1) (S520).

If the amount of current flowing in the circuit is greater than a preset value (S530-Y), the processor (13) can control the circuit so that no current flows by applying a preset voltage to the gate of the NMOS (130) (S540).

Therefore, if excessive current flows through the circuit, the current flowing through the circuit can be blocked to prevent fire or damage to the circuit in advance.

FIG. 6 is a diagram for explaining the operation of a switch device that controls current flow in a circuit based on a temperature sensing value according to one embodiment of the present disclosure.

Referring to FIG. 6, the sensor (110) may be a temperature sensor (110-2).

The processor (13) can control current to flow in the circuit based on the discharge of at least one of the battery (140-1) and the super capacitor (140-1) included in the power supply (140) (S610).

The processor (13) can identify the temperature based on the sensing value of the temperature sensor (110-2) (S620).

If the temperature flowing in the circuit is higher than the first preset value (S630-Y), the processor (13) can control current from flowing in the circuit by applying a preset voltage to the gate of the NMOS (130) (S640).

FIG. 7 is a diagram for explaining the operation of a switch device that controls current flow in a circuit based on a temperature sensing value according to one embodiment of the present disclosure.

Referring to FIG. 7, the processor (13) can control current to flow in the circuit based on the discharge of at least one of the battery (140-1) and the super capacitor (140-1) included in the power supply (140) (S710).

The processor (13) can identify the temperature based on the sensing value of the temperature sensor (110-2) (S720).

If the temperature flowing in the circuit is less than the second preset value (S730-Y), the processor (13) can control current from flowing in the circuit by applying a preset voltage to the gate of the NMOS (130) (S740).

FIG. 8 is a diagram for explaining the operation of a switch device that controls current flow in a circuit based on a voltage sensing value according to one embodiment of the present disclosure.

Referring to FIG. 8, the sensor (110) may be a voltage sensor (110-3).

The processor (13) can control current to flow in the circuit based on the discharge of at least one of the battery (140-1) and the super capacitor (140-1) included in the power supply (140) (S810).

The processor (13) can identify the voltage based on the sensing value of the voltage sensor (110-3) (S820).

If the voltage flowing in the circuit is higher than a preset value (S830-Y), the processor (13) can control the circuit so that no current flows by applying the preset voltage to the gate of the NMOS (130) (S840).

According to various embodiments, the circuit may include a current sensor (110-1), a temperature sensor (110-2), and a voltage sensor (110-3). Here, the temperature sensor (110-2) may sense the temperature of a power supply unit including at least one of a battery or a supercapacitor.

If the current flowing in the circuit is greater than or equal to a preset value based on the sensing value of the current sensor (110-1), if the peripheral temperature of the temperature sensor is greater than or equal to a preset value based on the sensing value of the temperature sensor (110-2), and if the voltage applied to the circuit is greater than or equal to a preset value based on the sensing value of the voltage sensor (110-3), the processor (13) can control the circuit so that no current flows by applying a preset voltage to the gate of the NMOS (130).

If the current flowing in the circuit is equal to or greater than a preset value based on the sensing value of the current sensor (110-1), if the peripheral temperature of the temperature sensor is equal to or less than a preset value based on the sensing value of the temperature sensor (110-2), and if the voltage applied to the circuit is equal to or greater than a preset value based on the sensing value of the voltage sensor (110-3), the processor (13) may control the circuit so that the current does not flow only for a first preset time by applying a preset voltage to the gate of the NMOS (130), and may control the current to flow again when the first preset time has elapsed.

If the current flowing in the circuit is less than a preset value based on the sensing value of the current sensor (110-1), if the peripheral temperature of the temperature sensor is greater than or equal to a preset value based on the sensing value of the temperature sensor (110-2), and if the voltage applied to the circuit is less than a preset value based on the sensing value of the voltage sensor (110-3), the processor (13) may control the circuit so that the current does not flow only for a second preset time by applying a preset voltage to the gate of the NMOS (130), and control the current to flow again when the second preset time elapses. The second preset time may be shorter than the first preset time.

That is, by appropriately setting the time during which current does not flow through the circuit depending on the degree of overload, the circuit can be prevented from being damaged.

According to one embodiment, the method according to the various embodiments disclosed in the present document may be provided as included in a computer program product. The computer program product may be traded as a product between a seller and a buyer. The computer program product may be distributed in the form of a machine-readable storage medium (e.g., compact disc read only memory (CD-ROM)), or may be distributed online (e.g., downloaded or uploaded) via an application store (e.g., Play Store™) or directly between two user devices (e.g., smartphones). In the case of online distribution, at least a portion of the computer program product (e.g., a downloadable app) may be temporarily stored or temporarily generated in a machine-readable storage medium, such as the memory of a manufacturer's server, an application store's server, or an intermediary server.

Although the preferred embodiments of the present disclosure have been illustrated and described above, the present disclosure is not limited to the specific embodiments described above, and various modifications may be made by a person having ordinary skill in the art to which the present disclosure pertains without departing from the gist of the present disclosure as claimed in the claims, and such modifications should not be understood individually from the technical idea or prospect of the present disclosure.

100: Hybrid Switch Device
110: Sensor
120: Current limiting resistor
130: NMOS
140: Power supply
150: MCU
11: Communication Interface
12: Memory
13: Processor

Claims (7)

In hybrid switch devices,
A sensor that is connected to a circuit and senses various variable values;
A current limiting resistor for controlling the amount of current flowing through the circuit;
NMOS (N-type MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)), which acts as a switch to allow or block current in a circuit;
A power supply unit that supplies electrical energy to the circuit and includes a battery and a super capacitor;
memory that stores at least one instruction; and
a processor connected to the memory and configured to execute at least one instruction;
The above processor,
Controlling the flow of current in the circuit based on the discharge of at least one of the batteries and super capacitors included in the above power supply unit,
A switch device that controls the flow of current flowing in a circuit by applying a preset voltage to the gate of the NMOS based on the sensing value of the sensor. In the first paragraph,
The above processor,
A switching device that controls current to flow in a circuit based on the discharge of the super capacitor when the charge level of the battery included in the power supply unit is identified to be less than a preset value. In the first paragraph,
The above processor,
When a preset voltage is applied to the gate of the NMOS in a state where no current flows in the circuit, current is controlled to flow in the circuit based on the discharge of the supercapacitor for a preset period of time.
A switching device that controls current to flow through a circuit based on the discharge of the battery when the above-mentioned preset time has elapsed. In the first paragraph,
The above sensor,
It is a current sensor that senses the amount of current flowing in the circuit.
The above processor,
Identify the amount of current flowing in the circuit based on the sensing value of the current sensor,
A switch device that controls current flow in the circuit by applying a preset voltage to the gate of the NMOS when the amount of current flowing in the circuit is greater than a preset value. In the first paragraph,
The above sensor,
It is a temperature sensor,
The above processor,
Identify the temperature based on the sensing value of the above temperature sensor,
A switch device that controls current from flowing through a circuit by applying a preset voltage to the gate of the NMOS when the temperature is higher than a first preset value. In the first paragraph,
The above sensor,
It is a temperature sensor,
The above processor,
Identify the temperature based on the sensing value of the above temperature sensor,
A switch device that controls current from flowing through the circuit by applying a preset voltage to the gate of the NMOS when the temperature is lower than the second preset value. In the first paragraph,
The above sensor,
It is a voltage sensor,
The above processor,
Identify the voltage based on the sensing value of the voltage sensor,
A switch device that controls current from flowing through a circuit by applying a preset voltage to the gate of the NMOS when the above voltage is higher than a preset value.