KR102833519B1 - Substrate treating apparatus - Google Patents

Abstract

The substrate processing device of the present invention comprises: a substrate support unit provided in a processing space for processing a substrate, the substrate support unit supporting the substrate and having a first circulation path through which a heat transfer medium supplied to the substrate passes, and a second circulation path through which a temperature control fluid circulates inside; and a temperature control unit supplying the heat transfer medium and the temperature control fluid to the support unit, wherein the support unit and the substrate are partitioned into three or more virtual regions in a radial direction based on the center of the substrate, the first circulation path is provided as a plurality of paths so that the heat transfer medium is individually supplied to the substrate corresponding to a plurality of regions of the substrate, and the temperature control unit supplies one or more heat transfer media at different fluid pressures to the first circulation paths provided as the plurality of paths.

Description

{SUBSTRATE TREATING APPARATUS}

The present invention relates to a substrate processing device.

A process for manufacturing a semiconductor includes a deposition process for forming a film on a semiconductor wafer (hereinafter referred to as “substrate”), a chemical/mechanical polishing process for planarizing the film, a photolithography process for forming a photoresist pattern on the film, an etching process for forming the film into a pattern having electrical characteristics using the photoresist pattern, an ion implantation process for implanting specific ions into a predetermined area of the substrate, a cleaning process for removing impurities on the substrate, and an inspection process for inspecting the surface of the substrate on which the film or pattern is formed.

For example, the etching process can be divided into dry etching and wet etching. In the dry etching process, high-frequency power is applied to upper and lower electrodes installed at a predetermined interval in a closed internal space where the etching process is performed to form an electric field, and an electric field is applied to a reaction gas supplied into the closed space to activate the reaction gas and create a plasma state, and then ions in the plasma etch the substrate located on the lower electrode.

At this time, it is necessary to form plasma uniformly over the entire upper surface of the substrate. In order to form plasma uniformly over the entire upper surface of the substrate, the temperature of the substrate must be uniform. However, as the plasma source may be affected by changes in the environment inside the chamber (e.g., contaminant deposition, component etching, design changes, etc.) during the substrate processing process, it is necessary to improve the substrate yield problem by controlling the temperature according to the area of the substrate.

The problem to be solved by the present invention is to provide a substrate processing device capable of improving substrate yield by controlling the temperature of a substrate corresponding to a substrate divided into a plurality of virtual regions.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the description below.

In order to achieve the above object, one aspect of the substrate processing device of the present invention comprises: a substrate support unit provided in a processing space for processing a substrate, the substrate support unit supporting the substrate and having a first circulation path through which a heat transfer medium supplied to the substrate passes, and a second circulation path through which a temperature control fluid circulates inside; and a temperature control unit supplying the heat transfer medium and the temperature control fluid to the support unit, wherein the support unit and the substrate are partitioned into three or more virtual regions in a radial direction based on the center of the substrate, and the first circulation path is provided as a plurality of paths so that the heat transfer medium is individually supplied to the substrate corresponding to a plurality of regions of the substrate, and the temperature control unit supplies one or more heat transfer media at different fluid pressures or flow rates to the first circulation paths provided as the plurality of paths.

Another aspect of the substrate processing device of the present invention for achieving the above object comprises: a chamber in which a processing space for processing a substrate is formed; a gas supply unit for supplying a processing gas to the processing space; a shower head unit provided above the processing space and spraying the processing gas supplied from the gas supply unit into the processing space, the shower head unit forming an upper electrode; a support unit forming a lower electrode corresponding to the upper electrode in the processing space, the support unit having a support chuck for supporting the substrate, and a ring assembly surrounding the support chuck; and a temperature control unit for supplying helium gas and a cooling fluid to the support unit, wherein the support unit comprises: a first circulation path provided inside the support chuck and through which the helium gas supplied to the substrate passes; And a second circulation passage which is not connected to the first circulation passage and is located below the first circulation passage, has a larger diameter than the first circulation passage, and through which the cooling fluid passes, wherein the support chuck and the substrate are divided into four virtual regions in a radial direction based on the center of the substrate, and includes a first region corresponding to the center region of the substrate, a second region located outside the first region, a third region located outside the second region, and a fourth region located outside the third region and corresponding to an edge region of the substrate, and the first circulation passage includes: a first gas passage which supplies the helium gas to the substrate at a position corresponding to the first region; a second gas passage which supplies the helium gas to the substrate at a position corresponding to the second region; and a third gas passage which supplies the helium gas to the substrate at a position corresponding to the third region. And a fourth gas path for supplying the helium gas to the substrate at a position corresponding to the fourth region, wherein the second circulation path includes a first liquid path through which the cooling fluid passes at positions corresponding to the first region, the second region, and the third region; and a second liquid path which is separated so as not to communicate with the first liquid path and through which the cooling fluid passes at a position corresponding to the fourth region, and the temperature control unit includes a heat transfer medium storage unit having a first gas supply unit connected to the first gas path and having a fluid pressure or flow rate controlled by a first solenoid valve, a second gas supply unit connected to the second gas path and having a fluid pressure or flow rate controlled by a second solenoid valve, a third gas supply unit connected to the third gas path and having a fluid pressure or flow rate controlled by a third solenoid valve, and a fourth gas supply unit connected to the fourth gas path and having a fluid pressure or flow rate controlled by a fourth solenoid valve; And a cooling fluid storage unit having a first liquid supply unit connected to the first liquid path and having a fluid pressure or flow rate controlled by a fifth solenoid valve, and a second liquid supply unit connected to the second liquid path and having a fluid pressure or flow rate controlled by a sixth solenoid valve.

Specific details of other embodiments are included in the detailed description and drawings.

The substrate processing device according to the present invention is provided with a first circulation path provided with four channels corresponding to a substrate and a substrate support unit divided into four virtual regions, which supplies helium gas to each region of the substrate to enable temperature control for each region of the substrate, and a second circulation path equipped with a plurality of channels is provided to reduce the length between the inlet and the outlet without reducing the overall channel length, so that the temperature control of the substrate can be facilitated, and thus the substrate yield can be improved.

FIG. 1 is a drawing illustrating a semiconductor device manufacturing facility equipped with a substrate processing device according to some embodiments of the present invention.
FIG. 2 is a drawing illustrating a substrate processing device according to some embodiments of the present invention.
FIG. 3 is a drawing illustrating an area of a substrate support unit of a substrate processing device according to some embodiments of the present invention.
FIG. 4 is a plan view illustrating a second circulation path of a substrate processing device according to some embodiments of the present invention.
FIG. 5 is a perspective view illustrating a second circulation path of a substrate processing device according to some embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The advantages and features of the present invention and the methods for achieving them will become clear with reference to the embodiments described in detail below together with the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and these embodiments are provided only to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terminology used herein is for the purpose of describing embodiments only and is not intended to be limiting of the invention. As used herein, the singular includes the plural unless the context clearly dictates otherwise. The terms "comprises" and/or "comprising" as used herein do not exclude the presence or addition of one or more other components, steps, operations, and/or elements.

FIG. 1 is a drawing illustrating a semiconductor device manufacturing facility equipped with a substrate processing device according to some embodiments of the present invention.

Referring to FIG. 1, the semiconductor device manufacturing facility (900) may be configured to include a load port module (820), an index module (910), a load lock chamber (920), a transfer chamber (930), and a process chamber. Hereinafter, the process chamber will be referred to as a substrate processing device (1).

The semiconductor device manufacturing facility (900) is a system that processes a plurality of substrates (W) (e.g., wafers) through various processes such as an etching process and a cleaning process. The semiconductor device manufacturing facility (900) can be implemented as a multi-chamber type substrate processing system that includes a transfer robot (911, 931) in charge of transferring substrates and a plurality of substrate processing devices (1), which are substrate processing modules, arranged around the transfer robot.

The load port module (820) is where a container (950) (e.g., a Front Opening Unified Pod (FOUP)) having a plurality of substrates (W) mounted is mounted. A plurality of such load port modules (820) can be placed in front of the index module (910).

When a plurality of load port modules (820) are arranged in front of the index module (910), the containers (950) mounted on each load port module (820) can load different objects. For example, when three load port modules (820) are arranged in front of the index module (910), the first container (950a) mounted on the first load port (820a) on the left can load a wafer-type sensor (not shown), the second container (950b) mounted on the second load port (820b) on the middle side can load a substrate (W), and the third container (950c) mounted on the third load port (820c) on the right can load a consumable part (not shown). However, the present embodiment is not limited thereto. The containers (950a, 950b, 950c) mounted on each load port (820a, 820b, 820c) can be changed as needed, such that they can also load the same objects.

The index module (910) is arranged between the load port module (820) and the load lock chamber (920) to interface to transfer the substrate (W) between the container (950) on the load port module (820) and the load lock chamber (920). The index module (910) may be implemented as a front end module (FEM), but is not limited thereto.

The index module (910) may be equipped with a first transport robot (911) responsible for transporting the substrate (W). The first transport robot (911) may operate in an atmospheric pressure environment and transport the substrate (W) between the container (950) and the load lock chamber (920).

The load lock chamber (920) can act as a buffer between an input port and an output port on a semiconductor device manufacturing facility (900). The load lock chamber (920) can have a buffer stage inside which a substrate (W) temporarily waits.

A plurality of load lock chambers (920) may be provided between the index module (910) and the transfer chamber (930). In the present embodiment, for example, two load lock chambers (921, 922), such as a first load lock chamber (921) and a second load lock chamber (922), may be provided between the index module (910) and the transfer chamber (930).

The first load lock chamber (921) and the second load lock chamber (922) may be arranged horizontally between the index module (910) and the transfer chamber (930). For example, the first load lock chamber (921) and the second load lock chamber (922) may be provided as a mutually symmetrical single-layer structure arranged in a left-right direction. Alternatively, the first load lock chamber (921) and the second load lock chamber (922) may be arranged vertically between the index module (910) and the transfer chamber (930).

The first load lock chamber (921) can transfer the substrate (W) from the index module (910) to the transfer chamber (930), and the second load lock chamber (922) can transfer the substrate (W) from the transfer chamber (930) to the index module (910). However, the present embodiment is not limited thereto. The first load lock chamber (921) can transfer the substrate (W) from the transfer chamber (930) to the index module (910), and the second load lock chamber (922) can also transfer the substrate from the index module (910) to the transfer chamber (930).

The load lock chamber (920) can be loaded with or unloaded with a substrate (W) by the second return robot (931) of the transfer chamber (930). The load lock chamber (920) can also be loaded with or unloaded with a substrate (W) by the first return robot (911) of the index module (910).

The load lock chamber (920) can maintain pressure while changing its internal environment between a vacuum environment and an atmospheric pressure environment using a gate valve, etc. Through this, the load lock chamber (920) can prevent the internal pressure state of the transfer chamber (930) from changing.

Specifically, the load lock chamber (920) can form its interior into a vacuum environment identical to (or close to) that of the transfer chamber (930) when the substrate (W) is loaded or unloaded by the second transfer robot (931). In addition, the load lock chamber (920) can form its interior into an atmospheric pressure environment when the substrate (W) is loaded or unloaded by the first transfer robot (911) (i.e., when an unprocessed substrate (W) is supplied from the first transfer robot (911) or a processed substrate (W) is transferred to the index module (910)).

The transfer chamber (930) transfers the substrate (W) between the load lock chamber (920) and the substrate processing device (1). For this purpose, the transfer chamber (930) may be equipped with at least one second return robot (931).

The second return robot (931) transfers an unprocessed substrate (W) from the load lock chamber (920) to the substrate processing device (1), or transfers a processed substrate (W) from the substrate processing device (1) to the load lock chamber (920). For this purpose, each side of the transfer chamber (930) can be connected to a load lock chamber (920) and a plurality of substrate processing devices (1).

Meanwhile, the second return robot (931) can operate in a vacuum environment and can rotate freely.

The substrate processing device (1) can process a substrate (W). The substrate processing device (1) can be implemented as an etching chamber that processes the substrate (W) using an etching process, and can be implemented as a plasma reaction chamber that etches the substrate (W) using, for example, a plasma process.

A plurality of substrate processing devices (1) may be arranged around the transfer chamber (930). In this case, each substrate processing device (1) may receive a substrate (W) from the transfer chamber (930), process the substrate (W), and provide the processed substrate (W) to the transfer chamber (930).

The substrate processing device (1) may be formed in a cylindrical shape. The substrate processing device (1) may be formed of alumite having an anodic oxide film formed on the surface, and the interior thereof may be configured to be airtight. Meanwhile, the substrate processing device (1) may also be formed in a shape other than a cylindrical shape in the present embodiment.

Below, the substrate processing device (1) will be described in detail with reference to the drawings.

FIG. 2 is a drawing illustrating a substrate processing apparatus according to some embodiments of the present invention, FIG. 3 is a drawing illustrating an area of a substrate support unit of a substrate processing apparatus according to some embodiments of the present invention, FIG. 4 is a plan view illustrating a second circulation path of a substrate processing apparatus according to some embodiments of the present invention, and FIG. 5 is a perspective view illustrating a second circulation path of a substrate processing apparatus according to some embodiments of the present invention.

Referring to FIGS. 2 to 5, a substrate processing device (1) according to an embodiment of the present invention may include a chamber (100), a substrate support unit (200), a gas supply unit (300), and a shower head unit (400). The substrate processing device (1) may process a substrate (W) using plasma. For example, the substrate processing device (1) may perform an etching process for etching an oxide film and/or a nitride film on the substrate (W), but various modifications are possible, such as performing a cleaning process or performing an etching/cleaning process on polysilicon and/or photoresist.

The chamber (100) can provide a processing space in which a substrate processing process is performed inside. For example, the chamber (100) can have a cylindrical shape. The chamber (100) can be provided in a sealed processing space shape. The chamber (100) can be made of a metal material such as aluminum and can be grounded.

An exhaust hole (102) may be formed on the bottom surface of the chamber (100). The exhaust hole (102) may be connected to an exhaust line (111). Reaction by-products generated during the process and gases remaining in the internal space of the chamber (100) may be discharged to the outside through the exhaust hole (102) and the exhaust line (111). Through the exhaust process, the interior of the chamber (100) may be decompressed to a predetermined pressure, and for example, a vacuum atmosphere may be formed.

A substrate support unit (200) may be positioned inside the chamber (100). The substrate support unit (200) may support a substrate (W). The substrate support unit (200) may be provided as an electrostatic chuck that absorbs the substrate (W) using electrostatic force. Alternatively, the substrate support unit (200) may support the substrate (W) in various ways, such as mechanical clamping. Hereinafter, an example in which the substrate support unit (200) is provided as an electrostatic chuck will be described.

For example, the substrate support unit (200) may include a support chuck (210) and a ring assembly (280), and a temperature control unit (240, 260) may be connected.

The support chuck (210) may be divided into upper and lower parts, for example. The upper part of the support chuck (210) may have a step formed so that the center region is positioned higher than the edge region, and a ring assembly (280) may be arranged on the upper circumferential surface.

The upper part of the support chuck (210) may be provided with a dielectric substance in the shape of a disk. A substrate (W) may be placed on the upper surface of the support chuck (210). The upper surface of the support chuck (210) may have a smaller radius than the substrate (W). The edge area of the substrate (W) may be located on the outer side of the support chuck (210). That is, the edge area of the substrate (W) may be located in the ring assembly (280). However, the present invention is not limited thereto.

In addition, the support chuck (210) may be provided with a separate electrode (not shown) that absorbs the substrate (W) by electrostatic force inside. The separate electrode can absorb the substrate (W) by electrostatic force generated between the electrode and the substrate (W) by turning on/off the switch. Here, the separate electrode of the support chuck (210) is a separate electrode that absorbs the substrate by electrostatic force, not the electrode (lower electrode) of the plasma source.

That is, the lower part of the support chuck (210) may be provided with a metal material such as aluminum, and may be connected to a high-frequency power source that generates high-frequency power such as RF (high-voltage alternating current power), so as to function as a lower electrode that receives high-frequency power from the power source. Alternatively, a separate electrode plate forming a separate lower electrode may be provided. That is, the support chuck (210) may be provided with an electrode function for serving as a plasma source.

The ring assembly (280) can focus plasma onto the substrate. Although not shown in the drawing, the ring assembly (280) can be provided by combining one or more rings, and for example, can be provided as an inner ring surrounding the support chuck (210) and an outer ring surrounding the inner ring.

In addition, a plurality of embosses (not shown) may be formed on the upper side of the support chuck (210). A heat transfer medium discharged from the first circulation path (230) may be supplied to the recesses (not shown) between the embosses. In addition, one or more dams (211, 215) may be provided on the support chuck (210). For example, the dams (211, 215) may be provided as an outer dam (211) and an inner dam (215), and the outer dam (211) may be arranged to correspond to an edge of the substrate (W), and the inner dam (215) may be arranged on the inside of the substrate (W) compared to the outer dam (211).

In addition, a first circulation path (230) and a second circulation path (250) may be formed inside the support chuck (210) to control the temperature of the substrate (W).

Before explaining the first circulation path (230) and the second circulation path (250), the substrate support unit (200) and the substrate (W) of the present embodiment can be divided into a number of regions, and for example, can be divided into a first region (Z1), a second region (Z2), and a third region (Z3) provided in the inner region of the inner dam (215) and a fourth region (Z4) adjacent to the outer dam (211).

Here, the first region (Z1) corresponds to the central region of the substrate (W), the second region (Z2) is located outside the first region (Z1), the third region (Z3) is located outside the second region (Z2), and the fourth region (Z4) may correspond to an edge region of the substrate (W) outside the third region (Z3). That is, the first region (Z1), the second region (Z2), the third region (Z3), and the fourth region (Z4) may be provided correspondingly in sequence from the central region to the edge region of the substrate (W).

This is to divide the area of the substrate (W) into four virtual areas in order to individually control the temperature according to the area of the substrate (W) so that the processing of the substrate (W) is performed uniformly in response to the process environment, and to ensure that the structure in which the first circulation path (230) and the second circulation path (250) extends takes up the minimum amount of internal space of the support chuck (210).

That is, since various structures such as lift pins (not shown) are provided inside the support chuck (210), there is a limit to adding lines to extend the first circulation path (230) and the second circulation path (250) by changing the internal structure of the support chuck (210), and so in this embodiment, the temperature of the substrate (W) is controlled by dividing it into four areas so that temperature control for each area of the substrate (W) is individually performed, while minimizing design changes by dividing it into four areas.

The first circulation path (230) provided in the support chuck (210) may be provided as a passage through which a heat transfer medium circulates. For example, the first circulation path (230) may be arranged so that ring-shaped paths having different radii have the same center, and each of the first circulation paths (230) may be separated from each other so that an individual heat transfer medium may pass through each of them.

The first circulation path (230) may be connected to a heat transfer medium storage unit (240) through a plurality of heat transfer medium supply lines (not shown). A heat transfer medium may be stored in the heat transfer medium storage unit. The heat transfer medium may be an inert gas such as helium gas. The helium gas may be supplied to the first circulation path (230) through the heat transfer medium supply line. The helium gas passing through the first circulation path (230) may act as a medium that transfers heat of the substrate (W). In other words, the substrate (W) may be cooled by the helium gas.

The first circulation path (230) may be provided with a first supply path (not shown) extending upward. For example, the first supply path may supply a heat transfer medium to the lower surface of the substrate (W) by penetrating the support chuck (210). In addition, the first supply path and the first circulation path (230) may be provided as paths for recovering the heat transfer medium after the etching of the substrate (W) is completed.

That is, after helium gas is supplied to the bottom surface of the substrate (W) through the first circulation path (230) and the first supply path, it may be returned to the heat transfer medium storage unit through the first supply path and the first circulation path (230), but is not limited thereto. In addition, the first supply path may be provided to be in communication with the recess, but is not limited thereto.

In addition, the first circulation path (230) may be provided as a plurality of paths corresponding to the substrate (W) divided into a plurality of regions. For example, the first circulation path (230) may be provided so that helium gas divided into four regions is supplied to the substrate (W) divided into four regions (a first region (Z1), a second region (Z2), a third region (Z3), and a fourth region (Z4)).

For example, the first circulation path (230) may include a first gas path (231), a second gas path (232), a third gas path (233), and a fourth gas path (234).

The first gas path (231) can supply helium gas to the substrate (W) at a location corresponding to the first region (Z1). The first gas path (231) is connected to the first gas supply unit (241), so that helium gas can be supplied at a first fluid pressure and/or a first flow rate.

The second gas path (232) can supply helium gas to the substrate (W) at a location corresponding to the second region (Z2). The second gas path (232) is connected to the second gas supply unit (242), so that helium gas can be supplied at a second fluid pressure and/or a second flow rate.

The third gas path (233) can supply helium gas to the substrate (W) at a location corresponding to the third region (Z3). The third gas path (233) is connected to the third gas supply unit (243), so that helium gas can be supplied at a third fluid pressure and/or a third flow rate.

The fourth gas path (234) can supply helium gas to the substrate (W) at a location corresponding to the fourth region (Z4). The fourth gas path (234) is connected to the fourth gas supply unit (244), so that helium gas can be supplied at a fourth fluid pressure and/or a fourth flow rate.

That is, while helium gas is individually supplied to the first gas path (231), the second gas path (232), the third gas path (233), and the fourth gas path (234), the fluid pressure and/or the flow rate can be individually controlled, so that at least one of the first fluid pressure/first flow rate, the second fluid pressure/second flow rate, the third fluid pressure/third flow rate, and the fourth fluid pressure/fourth flow rate can be provided with a different fluid pressure/flow rate, so that, depending on the embodiment, two or more fluid pressures/flow rates may be different, or the fluid pressures/flow rates discharged from all four paths may be different.

For example, as the temperature of the substrate (W) increases in the first region (Z1), the second region (Z2), the third region (Z3), and the fourth region (Z4), the pressure of the fluid may increase in the first fluid pressure, the second fluid pressure, the third fluid pressure, and the fourth fluid pressure. In other words, the pressure of the heat transfer medium may be higher and the flow rate may be larger in the region where the temperature of the substrate (W) is higher.

Here, control of the first fluid pressure/first flow rate, the second fluid pressure/second flow rate, the third fluid pressure/third flow rate, and the fourth fluid pressure/fourth flow rate can be performed by the temperature control unit (240, 260).

The second circulation path (250) is not connected to the first circulation path (230) and may be provided as a passage through which a cooling fluid (e.g., cooling water) circulates as a temperature control fluid. The second circulation path (250) may be formed in a spiral and/or circular shape inside the support chuck (210). Alternatively, the second circulation path (250) may be arranged such that ring-shaped paths having different radii have the same center.

The second circulation path (250) may have a larger diameter/cross-sectional area than the first circulation path (230). The second circulation path (250) may be divided into a plurality of lines and formed at the same height. The second circulation path (250) may be located below the first circulation path (230).

The second circulation path (250) may be connected to a cooling fluid storage unit (not shown) through cooling fluid supply lines (261L1, 261L2, 263L1, 263L2). The cooling fluid storage unit may store cooling fluid. A cooler (not shown) may be provided within the cooling fluid storage unit. The cooler may cool the cooling fluid to a predetermined temperature. Alternatively, the cooler may be installed on the cooling fluid supply lines (261L1, 261L2, 263L1, 263L2). The cooling fluid supplied to the second circulation path (250) through the cooling fluid supply lines (261L1, 261L2, 263L1, 263L2) may circulate along the second circulation path (250) and cool the substrate support unit (200). The substrate support unit (200) can cool the substrate (W) together with the substrate while cooling, thereby maintaining the substrate (W) at a predetermined temperature.

For example, the second circulation path (250) may include a first liquid path (251) and a second liquid path (253).

The first liquid path (251) may be provided so that the cooling fluid may pass through positions corresponding to the first region (Z1), the second region (Z2), and the third region (Z3). The first liquid path (251) is connected to the first liquid supply unit (261) by the first cooling fluid supply lines (261L1, 261L2), so that the temperature of the substrate support unit (200) may be controlled as the cooling fluid circulates.

The second liquid path (253) is separated from the first liquid path (251) so as not to be in communication with it, and can be provided so that the cooling fluid passes through it at a location corresponding to the fourth region (Z4). The second liquid path (253) is connected to the second liquid supply unit (262) by the second cooling fluid supply line (263L1, 263L2), so that the temperature of the substrate support unit (200) can be controlled as the cooling fluid circulates.

The temperature control unit (240, 260) may include a heat transfer medium storage unit (240) and a cooling fluid storage unit (260) to supply helium gas and cooling fluid to the substrate support unit (200). Although not shown in the drawing, a baratron gauge may be provided on the heat transfer medium supply line so that the fluid pressure/flow rate of the fluid supplied from the temperature control unit (240, 260) may be measured in real time and controlled.

The heat transfer medium storage unit (240) can supply a heat transfer medium and may include a first gas supply unit (241), a second gas supply unit (242), a third gas supply unit (243), and a fourth gas supply unit (244), each of which is equipped with a heat transfer medium supply line.

The first gas supply unit (241) is connected to the first gas path (231) by a heat transfer medium supply line, and the fluid pressure of the heat transfer medium can be controlled by the first solenoid valve (241V) provided on the heat transfer medium supply line to supply it to the substrate (W).

The second gas supply unit (242) is connected to the second gas path (232) by a heat transfer medium supply line, and the fluid pressure of the heat transfer medium can be controlled by a second solenoid valve (242V) provided on the heat transfer medium supply line to supply it to the substrate (W).

The third gas supply unit (243) is connected to the third gas path (233) by a heat transfer medium supply line, and the fluid pressure of the heat transfer medium can be controlled by a third solenoid valve (243V) provided on the heat transfer medium supply line to supply it to the substrate (W).

The fourth gas supply unit (244) is connected to the fourth gas path (234) by a heat transfer medium supply line, and the fluid pressure of the heat transfer medium can be controlled by the fourth solenoid valve (244V) provided on the heat transfer medium supply line to supply it to the substrate (W).

The cooling fluid storage unit (260) may be equipped with a first liquid supply unit (261) and a second liquid supply unit (262).

The first liquid supply unit (261) is connected to the first liquid path (251) by the first cooling fluid supply line (261L1, 261L2), and the fluid pressure and/or flow rate can be controlled by the fifth solenoid valve (261V) on the first cooling fluid supply line (261L1, 261L2).

The second liquid supply unit (262) is connected to the second liquid path (253) by a second cooling fluid supply line (263L1, 263L2), and the fluid pressure and/or flow rate can be controlled by a sixth solenoid valve (263V) on the second cooling fluid supply line (263L1, 263L2).

In this way, rather than providing the liquid path as a single channel, the first liquid path (251) and the second liquid path (253) are separated so that the overall length between the inlet and the outlet can be reduced, that is, the length between the inlet forming the entrance and the outlet forming the exit through which heat is discharged after heat exchange can be reduced, so that the difference in the heat exchange efficiency of the fourth region (Z4) corresponding to the edge area of the substrate (W) with the heat exchange efficiency of the first region (Z1) can be reduced, or the temperature of the fourth region (Z4) can be individually controlled by supplying cooling fluids having different temperatures, so that the environment for the substrate (W) processing process can be optimized.

In addition, the first cooling fluid supply line (261L1, 261L2) and the second cooling fluid supply line (263L1, 263L2) of the present embodiment may be provided as an inlet line (261L1, 263L1) and an outlet line (261L2, 263L2). The inlet line (261L1, 263L1) may be a line through which cooling fluid passes before heat exchange with the substrate support unit (200), and the outlet line (261L2, 263L2) may be a line through which cooling fluid that has been heat exchanged with the substrate support unit (200) passes.

Here, the fifth solenoid valve (261V) and the sixth solenoid valve (263V) may be provided on the inlet line (261L1, 263L1) forming a path leading to the substrate support unit (200), but are not limited thereto.

Meanwhile, the first liquid supply unit (261) and the second liquid supply unit (262) of the present embodiment may be provided as one unit rather than being divided into two, and various modifications are possible, such as having a structure in which the second cooling fluid supply line (263L1, 263L2) branches from the first cooling fluid supply line (261L1, 261L2).

The gas supply unit (300) can supply process gas inside the chamber (100). The gas supply unit (300) can include a gas feeder (310), a gas supply pipe (320), and a gas storage unit (330).

Gas from the gas storage unit (330) can be supplied into the chamber (100) through the gas feeder (310) via the gas supply pipe (320). For example, the gas feeder (310) can be installed at the center of the upper surface of the chamber (100).

The shower head unit (400) may be spaced a certain distance downward from the upper surface of the chamber (100) so that a certain space may be formed at the upper portion of the chamber (100). The shower head unit (400) may be provided in a plate shape with a certain thickness. The shower head unit (400) may be formed with a plurality of injection holes. The injection holes may vertically penetrate the shower head unit (400) and inject process gas into the processing space.

The shower head unit (400) may be provided with a separate upper plate (not shown) that functions as an upper electrode. The upper plate may be provided with a metal material and may be provided to have the same or similar diameter as the substrate support unit (200). The bottom surface of the shower head unit (400) may be anodized to prevent arc generation due to plasma. The upper plate of the shower head unit (400) may be electrically connected to a separate power source (not shown). The power source of the shower head unit (400) may be provided as a high-frequency power source (e.g., high-voltage alternating current). Alternatively, the shower head unit (400) may be electrically grounded. The shower head unit (400) may be electrically connected to the power source or may be grounded to function as an electrode.

That is, the shower head unit (400) (e.g., upper plate) functions as an upper electrode, and the support chuck (210) (e.g., electrode plate) functions as a lower electrode, and the upper electrode and the lower electrode can be structured to be arranged vertically and parallel to each other with respect to the processing space (101). One of the upper electrode and the lower electrode can apply high-frequency power, and the other electrode can be grounded. An electromagnetic field is formed in the space between the upper electrode and the lower electrode, and the process gas supplied to the processing space, which is the space between the upper electrode and the lower electrode, can be excited into a plasma state.

Although the embodiments of the present invention have been described with reference to the above and the attached drawings, those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical idea or essential features thereof. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

1: Substrate processing device 100: Chamber
200: Substrate support unit 300: Gas supply unit
400: Shower Head Unit

Claims (10)

A substrate support unit provided in a processing space for processing a substrate, supporting the substrate and having a first circulation path through which a heat transfer medium supplied to the substrate passes, and a second circulation path through which a temperature control fluid circulates inside; and
A temperature control unit is included for supplying the heat transfer medium and the temperature control fluid to the substrate support unit.
The above substrate support unit and the above substrate,
It is divided into three or more virtual regions in a radial direction based on the center of the above substrate,
It includes a first region corresponding to the central region of the substrate, a second region located outside the first region, a third region located outside the second region, and a fourth region located outside the third region and corresponding to the edge region of the substrate.
The above first circulation path is,
The heat transfer medium is supplied to the substrate separately in multiple areas corresponding to the substrate and provided as multiple paths.
The above second circulation path is,
A first liquid path through which the temperature-controlling fluid passes at positions corresponding to the first region, the second region, and the third region, and
A second liquid path is separated so as not to be in communication with the first liquid path, and includes a second liquid path through which the temperature control fluid passes at a location corresponding to the fourth region,
The above temperature control unit,
A substrate processing device, wherein one or more heat transfer media are supplied to the first circulation path provided by the plurality of paths at different fluid pressures or flow rates. delete In the first paragraph,
The above heat transfer medium contains an inert gas,
The above first circulation path is,
A first gas path for supplying the inert gas to the substrate at a location corresponding to the first region;
A second gas path for supplying the inert gas to the substrate at a location corresponding to the second region;
A third gas path for supplying the inert gas to the substrate at a location corresponding to the third region; and
A substrate processing device comprising a fourth gas path for supplying the inert gas to the substrate at a location corresponding to the fourth region. In the third paragraph,
The above temperature control unit,
A substrate processing device, wherein the fluid pressure or flow rate of the heat transfer medium supplied to the substrate is individually controlled by a plurality of valves according to the first region, the second region, the third region, and the fourth region of the substrate. In paragraph 4,
A first gas supply unit connected to the first gas path and having a fluid pressure or flow rate controlled by a first solenoid valve forming one of the plurality of valves;
A second gas supply unit connected to the second gas path and having a fluid pressure or flow rate controlled by a second solenoid valve forming one of the plurality of valves;
A third gas supply unit connected to the third gas path and having a fluid pressure or flow rate controlled by a third solenoid valve forming one of the plurality of valves; and
A substrate processing device having a fourth gas supply unit connected to the fourth gas path and having a fluid pressure or flow rate controlled by a fourth solenoid valve forming one of the plurality of valves. delete In the first paragraph,
The above temperature control unit,
A first liquid supply unit connected to the first liquid path and supplying the temperature control fluid; and
A substrate processing device having a second liquid supply unit connected to the second liquid path and supplying the temperature control fluid. In the first paragraph,
The above support unit,
A support chuck forming a lower electrode in the above processing space and supporting the substrate; and
A substrate processing device comprising a ring assembly surrounding the support chuck. In Article 8,
A chamber in which the above processing space is formed;
A gas supply unit for supplying process gas to the above processing space;
A substrate processing device further comprising a shower head unit provided at an upper portion of the processing space and spraying the process gas supplied from the gas supply unit into the processing space, the shower head unit forming an upper electrode corresponding to the lower electrode of the support unit. A chamber in which a processing space for processing a substrate is formed;
A gas supply unit for supplying process gas to the above processing space;
A shower head unit provided at the upper portion of the processing space and spraying the process gas supplied from the gas supply unit into the processing space, the shower head unit forming the upper electrode;
A support unit having a lower electrode corresponding to the upper electrode in the processing space, a support chuck supporting the substrate, and a ring assembly surrounding the support chuck; and
Includes a temperature control unit that supplies helium gas and cooling fluid to the above support unit,
The above support unit,
A first circulation path provided inside the support chuck and through which the helium gas supplied to the substrate passes; and
A second circulation path is not connected to the first circulation path and is located below the first circulation path, has a diameter larger than the first circulation path, and includes a second circulation path through which the cooling fluid passes.
The above support chuck and the above substrate,
The substrate is divided into four virtual regions in a radial direction based on the center of the substrate, including a first region corresponding to the center region of the substrate, a second region located outside the first region, a third region located outside the second region, and a fourth region located outside the third region and corresponding to the edge region of the substrate.
The above first circulation path is,
A first gas path for supplying helium gas to the substrate at a location corresponding to the first region;
A second gas path for supplying helium gas to the substrate at a location corresponding to the second region;
A third gas path for supplying the helium gas to the substrate at a location corresponding to the third region; and
Including a fourth gas path for supplying the helium gas to the substrate at a location corresponding to the fourth region;
The above second circulation path is,
A first liquid path through which the cooling fluid passes at positions corresponding to the first region, the second region and the third region; and
A second liquid path is separated so as not to be in communication with the first liquid path, and includes a second liquid path through which the cooling fluid passes at a location corresponding to the fourth region,
The above temperature control unit,
A heat transfer medium storage unit having a first gas supply unit connected to the first gas path and having a fluid pressure or flow rate controlled by a first solenoid valve, a second gas supply unit connected to the second gas path and having a fluid pressure or flow rate controlled by a second solenoid valve, a third gas supply unit connected to the third gas path and having a fluid pressure or flow rate controlled by a third solenoid valve, and a fourth gas supply unit connected to the fourth gas path and having a fluid pressure or flow rate controlled by a fourth solenoid valve; and
A substrate processing device comprising a cooling fluid storage unit having a first liquid supply unit connected to the first liquid path and having a fluid pressure or flow rate controlled by a fifth solenoid valve, and a second liquid supply unit connected to the second liquid path and having a fluid pressure or flow rate controlled by a sixth solenoid valve.

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