KR102803812B1 - Semiconductor light-emitting device and display device using the same - Google Patents

Abstract

A semiconductor light-emitting device according to the present invention is characterized by including: a body portion including a first conductive semiconductor layer, an active layer formed on one surface of the first conductive semiconductor layer, and a second conductive semiconductor layer formed on one surface of the active layer; an electrode portion including a first conductive electrode formed on the other surface of the first conductive semiconductor layer and a second conductive electrode formed on one surface of the second conductive semiconductor layer; a guide layer formed to cover at least a portion of a side surface of the body portion and to have a different inclination from a side surface of the body portion; and a reflective layer formed on the side surface of the body portion so as to cover at least the guide layer.

Description

Semiconductor light-emitting device and display device using the same

The present invention relates to a semiconductor light-emitting device, particularly, to a semiconductor light-emitting device having a size of several to several tens of μm, and a display device using the same.

Recently, in the field of display technology, liquid crystal displays (LCDs), organic light-emitting diode displays (OLEDs), and micro LED displays are competing to implement large-area displays.

Among these, displays using semiconductor light-emitting elements (micro LEDs) with a diameter or cross-sectional area of 100 ㎛ or less can provide very high efficiency because they do not absorb light using polarizing plates, etc.

However, in the case of micro LED displays, millions of semiconductor light-emitting elements are required to implement a large area, making it difficult to transfer the elements compared to other technologies.

Meanwhile, technologies currently being developed for the transfer process of micro LEDs include pick & place, laser lift-off (LLO), and self-assembly.

One object of the present invention is to provide a semiconductor light-emitting device having a structure advantageous for light extraction and a display device using the semiconductor light-emitting device.

In addition, another object of the present invention is to provide a semiconductor light-emitting element having a structure that is easy to contact with a wiring electrode and a display device using the semiconductor light-emitting element.

A semiconductor light-emitting device according to the present invention is characterized by including: a body portion including a first conductive semiconductor layer, an active layer formed on one surface of the first conductive semiconductor layer, and a second conductive semiconductor layer formed on one surface of the active layer; an electrode portion including a first conductive electrode formed on the other surface of the first conductive semiconductor layer and a second conductive electrode formed on one surface of the second conductive semiconductor layer; a guide layer formed to cover at least a portion of a side surface of the body portion and to have a different inclination from a side surface of the body portion; and a reflective layer formed on the side surface of the body portion so as to cover at least the guide layer.

According to the present invention, the guide layer is characterized in that it is formed to extend from the first conductive semiconductor layer to the second conductive semiconductor layer along the side surface of the body portion.

According to the present invention, the guide layer is characterized in that a portion covering the second conductive semiconductor layer is formed thicker than a portion covering the first conductive semiconductor layer.

According to the present invention, the guide layer is characterized by being formed of an insulating material.

According to the present invention, the reflective layer is characterized in that it is formed to extend from the side of the body portion to the first conductive electrode so as to further cover the first conductive electrode.

A display device according to the present invention comprises: a substrate; semiconductor light-emitting elements arranged on the substrate; a planarizing layer formed to fill between the semiconductor light-emitting elements and cover a portion of the semiconductor light-emitting elements; and a wiring electrode arranged on the substrate and electrically connected to the semiconductor light-emitting elements, wherein the semiconductor light-emitting elements include: a body portion including a first conductive semiconductor layer, an active layer formed on one surface of the first conductive semiconductor layer, and a second conductive semiconductor layer formed on one surface of the active layer; an electrode portion including a first conductive electrode formed on the other surface of the first conductive semiconductor layer and a second conductive electrode formed on one surface of the second conductive electrode; a guide layer formed to cover at least a portion of a side surface of the body portion and to have a different inclination from a side surface of the body portion; and a reflective layer formed on the side surface of the body portion to cover at least the guide layer.

According to the present invention, the reflective layer is characterized in that it is formed to extend from the side of the body portion to the first conductive electrode so as to further cover the first conductive electrode.

According to the present invention, the wiring electrode is characterized by including a first wiring electrode disposed on one surface of the substrate and electrically connected to the first conductive electrode; and a second wiring electrode disposed on the planarization layer so as to intersect the first wiring electrode and electrically connected to the second conductive electrode.

According to the present invention, the planarization layer includes: a first planarization layer arranged between the semiconductor light-emitting elements; and a second planarization layer formed on the first planarization layer and formed to cover a portion of the semiconductor light-emitting elements, and the wiring electrode includes: a first wiring electrode arranged on the first planarization layer and electrically connected to the first conductive electrode through the reflective layer; and a second wiring electrode arranged on the second planarization layer so as to intersect the first wiring electrode and electrically connected to the second conductive electrode.

According to the present invention, the wiring electrode is characterized in that it includes a transparent electrode.

The present invention can reduce light loss and improve light extraction efficiency by forming a reflection layer directly on a semiconductor light-emitting element. In particular, when the reflection layer is formed entirely on a surface other than the surface from which light is emitted, or when the light direction angle is set within a predetermined range, the light extraction efficiency can be maximized.

In addition, the present invention can form electrical contact between a semiconductor light-emitting element and a wiring electrode through a reflective layer, and the contact freedom of a vertical semiconductor light-emitting element can be improved.

Figure 1 is a conceptual diagram showing one embodiment of a display device using a semiconductor light-emitting element of the present invention.
FIG. 2 is a partial enlarged view of part A of the display device of FIG. 1, and FIGS. 3a and 3b are cross-sectional views taken along lines BB and CC of FIG. 2.
Fig. 4 is a conceptual diagram showing the flip-chip type semiconductor light-emitting device of Fig. 3.
FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing color in relation to a flip-chip type semiconductor light-emitting device.
Figure 6 is a cross-sectional view showing a method for manufacturing a display device using a semiconductor light-emitting element of the present invention.
FIG. 7 is a perspective view showing another embodiment of a display device using a semiconductor light-emitting element of the present invention.
Fig. 8 is a cross-sectional view taken along line DD of Fig. 7.
Figure 9 is a conceptual diagram showing the vertical semiconductor light-emitting device of Figure 8.
Figure 10 is a cross-sectional view according to one embodiment of a conventional display device.
Fig. 11(a) is a conceptual diagram showing a semiconductor light-emitting device according to the present invention, and Fig. 11(b) is a cross-sectional view taken along line E-E' of Fig. 11(a).
Fig. 12 is a graph showing the light extraction efficiency according to the inclination angle of the guide layer in the semiconductor light-emitting device according to Fig. 11.
FIGS. 13a to 13i are cross-sectional views showing a process for manufacturing a semiconductor light-emitting device according to the present invention.
Figures 14 to 17 are cross-sectional views showing a process for manufacturing a display device using a semiconductor light-emitting element according to the present invention.

Hereinafter, the embodiments disclosed in this specification will be described in detail with reference to the attached drawings. Regardless of the drawing symbols, identical or similar components will be given the same reference numerals and redundant descriptions thereof will be omitted. The suffixes “module” and “part” used for components in the following description are given or used interchangeably only for the convenience of writing the specification and do not have distinct meanings or roles in themselves. In addition, when describing the embodiments disclosed in this specification, if it is determined that a specific description of a related known technology may obscure the gist of the embodiments disclosed in this specification, the detailed description thereof will be omitted. In addition, the attached drawings are only intended to facilitate the understanding of the embodiments disclosed in this specification and should not be construed as limiting the technical ideas disclosed in this specification by the attached drawings. In addition, when an element such as a layer, region, or substrate is mentioned as existing “on” another element, it will be understood that it may be directly on the other element or that an intermediate element may exist between them.

The display device described in this specification may include a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation device, a slate PC, a tablet PC, an ultrabook, a digital TV, a desktop computer, and the like. However, the configuration according to the embodiment described in this specification may be applied to a new product type developed in the future as long as it can include a display.

Figure 1 is a conceptual diagram showing one embodiment of a display device using a semiconductor light-emitting element of the present invention.

According to the city, information processed in the control unit of the display device (100) can be displayed on a flexible display. The flexible display includes a display that can be bent, curved, twisted, folded, or rolled by an external force. For example, the flexible display can be a display manufactured on a thin and flexible substrate that can be bent, folded, or rolled like paper while maintaining the display characteristics of a conventional flat panel display.

When the flexible display is not bent (for example, when it has an infinite radius of curvature, hereinafter referred to as the “first state”), the display area of the flexible display becomes a plane. When it is bent by an external force in the first state (for example, when it has a finite radius of curvature, hereinafter referred to as the “second state”), the display area can become a curved surface. As illustrated, information displayed in the second state can be visual information output on a curved surface. This visual information is implemented by independently controlling the light emission of sub-pixels arranged in a matrix form. The sub-pixel means the minimum unit for implementing one color.

The unit pixel of the above flexible display can be implemented by a semiconductor light-emitting element. In the present invention, a light-emitting diode (LED) is exemplified as a type of semiconductor light-emitting element that converts current into light. The light-emitting diode is formed in a small size, and thereby can function as a unit pixel even in the second state.

Below, a flexible display implemented using the light-emitting diode will be described in more detail with reference to the attached drawings.

FIG. 2 is a partial enlarged view of portion A of FIG. 1, FIGS. 3a and 3b are cross-sectional views taken along lines B-B and C-C of FIG. 2, FIG. 4 is a conceptual diagram showing the flip-chip type semiconductor light-emitting device of FIG. 3, and FIGS. 5a to 5c are conceptual diagrams showing various forms of implementing color in relation to the flip-chip type semiconductor light-emitting device.

FIG. 2, FIG. 3a and FIG. 3b illustrate a display device (100) using a semiconductor light-emitting element of a passive matrix (PM) type. However, the following example can also be applied to a semiconductor light-emitting element of an active matrix (AM) type.

The above display device (100) includes a substrate (110), a first electrode (120), a conductive adhesive layer (130), a second electrode (140), and a plurality of semiconductor light-emitting elements (150).

The substrate (110) may be a flexible substrate. The substrate (110) may include glass or polyimide (PI) to implement flexible performance. In addition, an insulating and flexible material such as PEN (Polyethylene Naphthalate) or PET (Polyethylene Terephthalate) may be used as a component of the substrate (110). In addition, the substrate (110) may be any of a transparent material or an opaque material.

The above substrate (110) may be a wiring substrate on which a first electrode (120) is arranged, and the first electrode (120) may be positioned on the substrate (110).

According to the city, the insulating layer (160) may be formed by being laminated on the substrate (110) where the first electrode (120) is located, and an auxiliary electrode (170) may be arranged on the insulating layer (160). In this case, a state in which the insulating layer (160) is laminated on the substrate (110) may become one wiring board. More specifically, the insulating layer (160) may be formed of an insulating and flexible material such as PI, PEN, PET, etc., and may be formed integrally with the substrate (110) to form one wiring board.

The auxiliary electrode (170) is an electrode that electrically connects the first electrode (120) and the semiconductor light-emitting element (150), is positioned on the insulating layer (160), and is arranged corresponding to the position of the first electrode (120). For example, the auxiliary electrode (170) has a dot shape and can be electrically connected to the first electrode (120) by an electrode hole (171) penetrating the insulating layer (160). The electrode hole (171) can be formed by filling a conductive material in the via hole.

According to the attached drawing, a conductive adhesive layer (130) is formed on one side of the insulating layer (160), but the present invention is not necessarily limited thereto. For example, a layer performing a specific function may be formed between the insulating layer (160) and the conductive adhesive layer (130), and a structure in which the conductive adhesive layer (130) is disposed on the substrate without the insulating layer (160) is also possible. In a structure in which the conductive adhesive layer (130) is disposed on the substrate, the conductive adhesive layer (130) may function as an insulating layer.

The conductive adhesive layer (130) may be a layer having adhesive properties and conductivity, and for this purpose, the conductive adhesive layer (130) may be formed by mixing a conductive material and an adhesive material. In addition, the conductive adhesive layer (130) has flexibility, and through this, a flexible function may be enabled in the display device.

For example, the conductive adhesive layer (130) may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, etc. The conductive adhesive layer (130) allows electrical interconnection in the z direction penetrating the thickness, but may be configured as an electrically insulating layer in the horizontal x-y direction. Therefore, the conductive adhesive layer (130) may be referred to as a z-axis conductive layer (however, hereinafter referred to as a ‘conductive adhesive layer’).

The above anisotropic conductive film is a film in the form of an anisotropic conductive medium mixed with an insulating base member, and when heat and pressure are applied, conductivity due to the anisotropic conductive medium is provided to a specific portion. In this specification, it is described that heat and pressure are applied to the anisotropic conductive film, but other methods (for example, a method in which only one of heat and pressure is applied, or a method using UV curing) may be used to provide partial conductivity to the anisotropic conductive film.

In addition, the anisotropic conductive medium may be a conductive ball or a conductive particle. According to the method, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member, and when heat and pressure are applied, only a specific part becomes conductive due to the conductive balls. The anisotropic conductive film may be a state in which particles are contained in a form in which a core of a conductive material is covered by an insulating film made of a polymer material, and in this case, when the insulating film of the particles contained in the part to which heat and pressure are applied is destroyed, the core becomes conductive. At this time, the shape of the core may be deformed to form a layer that contacts each other in the thickness direction of the film. More specifically, heat and pressure are applied to the entire anisotropic conductive film, and an electrical connection in the z-axis direction may be partially formed due to a height difference between counterparts to which the anisotropic conductive film is adhered.

As another example, the anisotropic conductive film may be a state in which a plurality of particles are contained in which a conductive material is coated on an insulating core. In this case, the conductive material in the portion where heat and pressure are applied is deformed (pressed and stuck) and becomes conductive in the thickness direction of the film. As another example, a form in which the conductive material penetrates the insulating base member in the z-axis direction and becomes conductive in the thickness direction of the film is also possible, and in this case, the conductive material may have a pointed end.

According to the city, the anisotropic conductive film may be a fixed array anisotropic conductive film (fixed array ACF) configured in a form in which conductive balls are inserted into one surface of an insulating base member. The insulating base member is formed of an adhesive material, and the conductive balls are concentratedly arranged on a bottom portion of the insulating base member, and when heat and pressure are applied from the base member, they are deformed together with the conductive balls to have conductivity in a vertical direction.

However, the present invention is not necessarily limited thereto, and the anisotropic conductive film may be in a form in which conductive balls are randomly mixed into an insulating base member, or in a form in which the anisotropic conductive film is composed of multiple layers and the conductive balls are arranged in one layer (double-ACF).

The anisotropic conductive paste is a combination of a paste and a conductive ball, and can be a paste in which a conductive ball is mixed with an insulating and adhesive base material. In addition, the solution containing conductive particles can be a solution containing conductive particles or nanoparticles.

Referring to the attached drawing, the second electrode (140) is positioned on the insulating layer (160) and spaced apart from the auxiliary electrode (170). That is, the conductive adhesive layer (130) is positioned on the insulating layer (160) where the auxiliary electrode (170) and the second electrode (140) are positioned.

When a conductive adhesive layer (130) is formed with an auxiliary electrode (170) and a second electrode (140) positioned on an insulating layer (160), and then heat and pressure are applied to connect a semiconductor light-emitting element (150) in a flip chip form, the semiconductor light-emitting element (150) is electrically connected to the first electrode (120) and the second electrode (140).

The semiconductor light-emitting device (150) may be a flip chip type light-emitting device as shown in FIG. 4.

For example, the semiconductor light-emitting element (150) includes a p-type electrode (156), a p-type semiconductor layer (155) on which the p-type electrode (156) is formed, an active layer (154) formed on the p-type semiconductor layer (155), an n-type semiconductor layer (153) formed on the active layer (154), and an n-type electrode (152) that is horizontally spaced from the p-type electrode (156) on the n-type semiconductor layer (153). In this case, the p-type electrode (156) can be electrically connected to the auxiliary electrode (170) by the conductive adhesive layer (130), and the n-type electrode (152) can be electrically connected to the second electrode (140).

Referring to FIGS. 2, 3a, and 3b, the auxiliary electrode (170) is formed to be long in one direction so that one auxiliary electrode (170) can be electrically connected to a plurality of semiconductor light-emitting elements (150). For example, the p-type electrodes (156) of the semiconductor light-emitting elements (150) on the left and right of the auxiliary electrode (170) can be electrically connected to one auxiliary electrode.

Specifically, the semiconductor light-emitting element (150) is pressed into the interior of the conductive adhesive layer (130) by heat and pressure, and thus, conductivity is provided only in the portion between the p-type electrode (156) and the auxiliary electrode (170) of the semiconductor light-emitting element (150) and the portion between the n-type electrode (152) and the second electrode (140) of the semiconductor light-emitting element (150), and the remaining portions do not have conductivity because the semiconductor light-emitting element (150) is not pressed in. In this way, the conductive adhesive layer (130) can not only mutually couple the semiconductor light-emitting element (150) and the auxiliary electrode (170) and the semiconductor light-emitting element (150) and the second electrode (140) but also electrically connect them.

In addition, a plurality of semiconductor light-emitting elements (150) form a light-emitting element array, and a phosphor layer (180) is formed on the light-emitting element array.

The light-emitting element array may include a plurality of semiconductor light-emitting elements (150) having different luminance values. Each semiconductor light-emitting element (150) constitutes a unit pixel and is electrically connected to a first electrode (120). For example, the first electrodes (120) may be plural, the semiconductor light-emitting elements (150) are arranged in several columns, and the semiconductor light-emitting elements (150) of each column may be electrically connected to one of the plurality of first electrodes (120).

In addition, since the semiconductor light-emitting elements (150) are connected in a flip chip form, semiconductor light-emitting elements (150) grown on a transparent dielectric substrate can be used. The semiconductor light-emitting elements (150) can be, for example, nitride semiconductor light-emitting elements. The semiconductor light-emitting elements (150) have excellent brightness and can form individual unit pixels even in a small size.

Referring to the drawing, a partition wall (190) may be formed between semiconductor light-emitting elements (150). In this case, the partition wall (190) may serve to separate individual unit pixels from each other and may be formed integrally with the conductive adhesive layer (130). For example, when a semiconductor light-emitting element (150) is inserted into an anisotropic conductive film, a base member of the anisotropic conductive film may form the partition wall (190).

In addition, if the base material of the anisotropic conductive film is black, the barrier rib (190) can have reflective properties and the contrast ratio can be increased without a separate black insulator.

As another example, a separate reflective partition may be provided as the partition (190). In this case, the partition (190) may include a black or white insulator depending on the purpose of the display device. When a partition (190) made of a white insulator is used, the effect of increasing reflectivity may be achieved, and when a partition made of a black insulator is used, the contrast ratio may be increased while having reflective characteristics.

The phosphor layer (180) may be positioned on the outer surface of the semiconductor light-emitting element (150). For example, if the semiconductor light-emitting element (150) is a blue semiconductor light-emitting element that emits blue (B) light, the phosphor layer (180) may perform a function of converting the blue (B) light into the color of a unit pixel. The phosphor layer (180) may be a red phosphor (181) or a green phosphor (182) that constitutes an individual pixel.

That is, at a position forming a red unit pixel, a red phosphor (181) capable of converting blue (B) light into red (R) light can be laminated on a blue semiconductor light-emitting element (151), and at a position forming a green unit pixel, a green phosphor (182) capable of converting blue (B) light into green (G) light can be laminated on a blue semiconductor light-emitting element (151). In addition, only the blue semiconductor light-emitting element (151) can be used alone in a portion forming a blue unit pixel. In this case, red (R), green (G), and blue (B) unit pixels can form one pixel. Specifically, a phosphor (180) of one color can be laminated along each line of the first electrode (120), and thus, one line in the first electrode (120) can become an electrode controlling one color. That is, red (R), green (G), and blue (B) can be sequentially arranged along the second electrode (140), and a unit pixel can be implemented.

However, the present invention is not necessarily limited to this, and instead of a fluorescent substance (180), a semiconductor light-emitting element (150) and a quantum dot (QD) may be combined to implement unit pixels of red (R), green (G), and blue (B).

Additionally, a black matrix (191) may be placed between each of the fluorescent layers (180) to enhance the contrast between light and dark.

However, the present invention is not necessarily limited to this, and other structures for implementing blue, red, and green may be applied.

Referring to FIG. 5a, each semiconductor light-emitting element (150) is mainly made of gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together to implement a high-output light-emitting element that emits light of various colors including blue.

In this case, the semiconductor light-emitting elements (150) may be provided with red, green, and blue semiconductor light-emitting elements to form each unit pixel (sub-pixel). For example, red, green, and blue semiconductor light-emitting elements (R, G, B) are alternately arranged, and the red, green, and blue unit pixels form one pixel by the red, green, and blue semiconductor light-emitting elements, thereby enabling a full color display to be implemented.

Referring to FIG. 5b, the semiconductor light-emitting element (150) may be a white light-emitting element (W) in which a yellow phosphor layer is provided for each individual element. In this case, a red phosphor layer (181), a green phosphor layer (182), and a blue phosphor layer (183) may be provided on the white light-emitting element (W) to form a unit pixel. In addition, a color filter in which red, green, and blue are repeated may be used on the white light-emitting element (W) to form a unit pixel.

Referring to FIG. 5c, a red phosphor layer (181), a green phosphor layer (182), and a blue phosphor layer (183) may be provided on an ultraviolet emitting element (UV). In this way, the semiconductor light emitting element (150) can be used in the entire range from the visible light range to the ultraviolet ray range, and can be expanded into the form of a semiconductor light emitting element in which ultraviolet ray can be used as an excitation source of an upper phosphor.

Looking back at this example, the semiconductor light-emitting element (150) is positioned on the conductive adhesive layer (130) to form a unit pixel in the display device. The semiconductor light-emitting element (150) has excellent brightness and can form an individual unit pixel even with a small size. The size of such an individual semiconductor light-emitting element (150) may be a rectangular or square element with one side length of 80 ㎛ or less. In the case of a rectangular element, the size may be 20×80 ㎛ or less.

In addition, even if a square semiconductor light-emitting element (150) with a side length of 10㎛ is used as a unit pixel, sufficient brightness for forming a display device can be implemented. Accordingly, if the unit pixel is a rectangular pixel with one side of 600㎛ and the other side of 300㎛ as an example, the distance between the semiconductor light-emitting elements (150) becomes relatively large enough, so that a flexible display device with HD picture quality can be implemented.

The display device using the semiconductor light-emitting element described above can be manufactured by a new type of manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG. 6.

Referring to FIG. 6, first, a conductive adhesive layer (130) is formed on an insulating layer (160) where an auxiliary electrode (170) and a second electrode (140) are positioned. An insulating layer (160) is laminated on a first substrate (110) to form a single substrate (or wiring substrate), and a first electrode (120), an auxiliary electrode (170), and a second electrode (140) are arranged on the wiring substrate. The first electrode (120) and the second electrode (150) may be arranged in a direction orthogonal to each other. In addition, in order to implement a flexible display device, the first substrate (110) and the insulating layer (160) may each include glass or polyimide (PI).

The above conductive adhesive layer (130) can be implemented by an anisotropic conductive film, and for this purpose, an anisotropic conductive film can be applied to a substrate positioned on an insulating layer (160).

Next, a second substrate (112) on which a plurality of semiconductor light-emitting elements (150) are positioned corresponding to the positions of the auxiliary electrodes (170) and the second electrodes (140) and forming individual pixels are positioned so that the semiconductor light-emitting elements (150) face the auxiliary electrodes (170) and the second electrodes (140).

In this case, the second substrate (112) is a growth substrate for growing a semiconductor light-emitting element (150), and can be a sapphire substrate or a silicon substrate.

The above semiconductor light emitting element (150) can be effectively used in a display device by having a spacing and size that can form a display device when formed in wafer units.

Next, the wiring board and the second board (112) are thermo-compression-bonded. For example, the wiring board and the second board (112) can be thermo-compression-bonded by applying an ACF press head. The wiring board and the second board (112) are bonded by the thermo-compression. By the thermo-compression, only the portion between the semiconductor light-emitting element (150) and the auxiliary electrode (170) and the second electrode (140) becomes conductive due to the characteristics of the anisotropic conductive film having conductivity, and the electrodes can be electrically connected to the semiconductor light-emitting element (150). At this time, the semiconductor light-emitting element (150) is inserted into the anisotropic conductive film, and a partition wall can be formed between the semiconductor light-emitting elements (150) through this.

Next, the second substrate (112) is removed. For example, the second substrate (112) can be removed using a laser lift-off (LLO) method or a chemical lift-off (CLO) method.

Finally, the second substrate (112) is removed to expose the semiconductor light-emitting element (150) to the outside. If necessary, the wiring substrate on which the semiconductor light-emitting element (150) is coupled may be coated with silicon oxide (SiOx) or the like to form a transparent insulating layer (not shown).

In addition, a step of forming a phosphor layer on one surface of the semiconductor light-emitting element (150) may be further included. For example, the semiconductor light-emitting element (150) is a blue semiconductor light-emitting element that emits blue (B) light, and a red phosphor or a green phosphor for converting the blue (B) light into the color of a unit pixel may be formed as a layer on one surface of the blue semiconductor light-emitting element.

The manufacturing method or structure of the display device using the semiconductor light-emitting element described above can be modified and implemented in various forms. For example, a vertical semiconductor light-emitting element can be applied to the display device described above. Hereinafter, the vertical structure will be described with reference to FIGS. 5 and 6.

In addition, the modified examples or embodiments described below are given the same or similar reference numbers for structures identical or similar to those of the previous examples, and the description thereof is replaced with the initial description.

FIG. 7 is a perspective view showing another embodiment of a display device using a semiconductor light-emitting element of the present invention, FIG. 8 is a cross-sectional view taken along line D-D of FIG. 7, and FIG. 9 is a conceptual diagram showing the vertical semiconductor light-emitting element of FIG. 8.

Referring to these drawings, the display device may be a display device using a vertical semiconductor light-emitting element of the passive matrix (PM) method.

The above display device includes a substrate (210), a first electrode (220), a conductive adhesive layer (230), a second electrode (240), and a plurality of semiconductor light-emitting elements (250).

The substrate (210) is a wiring substrate on which the first electrode (220) is arranged, and may include polyimide (PI) to implement a flexible display device, but any insulating and flexible material may also be used.

The first electrode (220) is positioned on the substrate (210) and may be formed as a long bar-shaped electrode in one direction. The first electrode (220) may serve as a data electrode.

The conductive adhesive layer (230) is formed on the substrate (210) where the first electrode (220) is positioned. As in a display device to which a flip chip type light-emitting element is applied, the conductive adhesive layer (230) may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, etc. However, in this embodiment, a case in which the conductive adhesive layer (230) is implemented by an anisotropic conductive film is exemplified.

When an anisotropic conductive film is positioned on a substrate (210) with a first electrode (220) positioned thereon and a semiconductor light-emitting element (250) is connected by applying heat and pressure, the semiconductor light-emitting element (250) is electrically connected to the first electrode (220). At this time, it is preferable that the semiconductor light-emitting element (250) be positioned so as to be positioned on the first electrode (220).

The above electrical connection is created because, as described above, when heat and pressure are applied to the anisotropic conductive film, it has partial conductivity in the thickness direction. Accordingly, the anisotropic conductive film is divided into a conductive portion (231) and a non-conductive portion (232) in the thickness direction.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer (230) implements not only an electrical connection but also a mechanical bond between the semiconductor light-emitting element (250) and the first electrode (220).

In this way, the semiconductor light-emitting element (150) is positioned on the conductive adhesive layer (130) to form a unit pixel in the display device. The semiconductor light-emitting element (150) has excellent brightness and can form an individual unit pixel even with a small size. The size of the individual semiconductor light-emitting element (150) may be a rectangular or square element with one side length of 80 ㎛ or less. In the case of a rectangular element, the size may be 20×80 ㎛ or less.

The above semiconductor light emitting element (250) may have a vertical structure.

Between the vertical semiconductor light-emitting elements (250), a plurality of second electrodes (240) are positioned in a direction intersecting the longitudinal direction of the first electrode (220) and are electrically connected to each of the vertical semiconductor light-emitting elements (250).

Referring to FIG. 9, this vertical semiconductor light-emitting device includes a p-type electrode (256), a p-type semiconductor layer (255) formed on the p-type electrode (256), an active layer (254) formed on the p-type semiconductor layer (255), an n-type semiconductor layer (253) formed on the active layer (254), and an n-type electrode (252) formed on the n-type semiconductor layer (253). In this case, the p-type electrode (256) located at the bottom can be electrically connected to the first electrode (220) by the conductive adhesive layer (230), and the n-type electrode (252) located at the top can be electrically connected to the second electrode (240) described below. This vertical semiconductor light-emitting device (250) has a great advantage in that the chip size can be reduced because the electrodes can be arranged upward and downward.

Referring to FIG. 8, a phosphor layer (280) may be formed on one surface of the semiconductor light-emitting element (250). For example, the semiconductor light-emitting element (250) is a blue semiconductor light-emitting element (251) that emits blue (B) light, and a phosphor layer (280) may be provided to convert the blue (B) light into a color of a unit pixel. In this case, the phosphor layer (280) may be a red phosphor (281) and a green phosphor (282) that constitute individual pixels.

That is, a red phosphor (281) capable of converting blue (B) light into red (R) light may be laminated on a blue semiconductor light-emitting element (251) at a position forming a red unit pixel, and a green phosphor (282) capable of converting blue (B) light into green (G) light may be laminated on a blue semiconductor light-emitting element (251) at a position forming a green unit pixel. In addition, a blue semiconductor light-emitting element (251) may be used alone at a portion forming a blue unit pixel. In this case, red (R), green (G), and blue (B) unit pixels may form one pixel.

However, the present invention is not necessarily limited thereto, and other structures for implementing blue, red, and green colors may be applied as described above in a display device to which a light-emitting element of the flip chip type is applied.

In this embodiment, the second electrode (240) is positioned between the semiconductor light-emitting elements (250) and is electrically connected to the semiconductor light-emitting elements (250). For example, the semiconductor light-emitting elements (250) may be arranged in a plurality of rows, and the second electrode (240) may be positioned between the rows of the semiconductor light-emitting elements (250).

Since the distance between the semiconductor light-emitting elements (250) forming individual pixels is sufficiently large, the second electrode (240) can be positioned between the semiconductor light-emitting elements (250).

The second electrode (240) may be formed as a long bar-shaped electrode in one direction and may be arranged in a direction perpendicular to the first electrode (220).

In addition, the second electrode (240) and the semiconductor light-emitting element (250) can be electrically connected by an electrode protruding from the second electrode (240). Specifically, the connecting electrode can be an n-type electrode (252) of the semiconductor light-emitting element (250). For example, the n-type electrode (252) is formed as an ohmic electrode for ohmic contact, and the second electrode (240) covers at least a portion of the ohmic electrode by printing or deposition. Through this, the second electrode (240) and the n-type electrode (252) of the semiconductor light-emitting element (250) can be electrically connected.

According to the city, the second electrode (240) may be positioned on the conductive adhesive layer (230), and, if necessary, a transparent insulating layer (not shown) including silicon oxide (SiOx) or the like may be formed on the substrate (210) on which the semiconductor light-emitting element (250) is formed. When the second electrode (240) is positioned after the transparent insulating layer is formed, the second electrode (240) is positioned on the transparent insulating layer. In addition, the second electrode (240) may be formed spaced apart from the conductive adhesive layer (230) or the transparent insulating layer.

When using a transparent electrode such as ITO (Indium Tin Oxide) to position the second electrode (240) on the semiconductor light-emitting element (250), the ITO material has a problem in that it has poor adhesion to the n-type semiconductor layer (253). Therefore, the present invention has an advantage in that it is not necessary to use a transparent electrode such as ITO by positioning the second electrode (240) between the semiconductor light-emitting elements (250). Accordingly, it is possible to improve the light extraction efficiency by using a conductive material having good adhesion to the n-type semiconductor layer (253) as a horizontal electrode without being restricted by the selection of a transparent material.

Referring to the drawing, a partition wall (290) may be positioned between the semiconductor light-emitting elements (250). In order to isolate the semiconductor light-emitting elements (250) forming individual pixels, the partition wall (290) may be arranged between the vertical semiconductor light-emitting elements (250). In this case, the partition wall (290) may serve to separate the individual unit pixels from each other, and may be formed integrally with the conductive adhesive layer (230). For example, when the semiconductor light-emitting elements (250) are inserted into the anisotropic conductive film, the base member of the anisotropic conductive film may form the partition wall (290).

In addition, if the base material of the anisotropic conductive film is black, the barrier rib (290) can have reflective properties and increase the contrast ratio without a separate black insulator.

As another example, the partition wall (290) may be provided separately as a reflective partition wall. The partition wall (290) may include a black or white insulator depending on the purpose of the display device.

If the second electrode (240) is positioned directly on the conductive adhesive layer (230) between the semiconductor light-emitting elements (250), the partition wall (290) can be positioned between the vertical semiconductor light-emitting elements (250) and the second electrode (240). Accordingly, individual unit pixels can be configured even in a small size by using the semiconductor light-emitting elements (250), and the distance between the semiconductor light-emitting elements (250) can be made relatively large enough so that the second electrode (240) can be positioned between the semiconductor light-emitting elements (250), thereby achieving the effect of achieving a flexible display device with HD picture quality.

Additionally, a black matrix (291) may be placed between each fluorescent substance to enhance the contrast between light and dark.

As described, the semiconductor light-emitting element (250) is positioned on the conductive adhesive layer (230), thereby configuring individual pixels in the display device. The semiconductor light-emitting element (250) has excellent brightness, so that individual unit pixels can be configured even with a small size. Accordingly, a full color display in which red (R), green (G), and blue (B) unit pixels form one pixel can be implemented by the semiconductor light-emitting element (250).

The present invention relates to a semiconductor light-emitting device having a novel structure and a display device using the same.

Figure 10 is a cross-sectional view according to one embodiment of a conventional display device.

Referring to FIG. 10, a conventional display device (300) is configured by arranging semiconductor light-emitting elements (350) on a substrate (310). In one embodiment, the substrate (310) may have receiving grooves (311) formed at predetermined intervals, and the semiconductor light-emitting elements (350) may be seated in the receiving grooves (311) formed in the substrate (310). At this time, one semiconductor light-emitting element (350) may be seated in one receiving groove (311). In addition, a partition wall (312) exists between the receiving grooves (311), so that the semiconductor light-emitting elements (350) may be separated from other semiconductor light-emitting elements (350) while being seated in the receiving grooves (311).

In addition, in the structure of a conventional display device (300), a planarization layer (320) is arranged on a substrate (310) to fill the space between the semiconductor light-emitting elements (350) mounted in the receiving groove (311) and the partition wall (312). Furthermore, the planarization layer (320) is formed to cover the semiconductor light-emitting elements (350) and can planarize one surface of the substrate (310).

Meanwhile, depending on the structure or arrangement of the semiconductor light-emitting element (350) constituting the conventional display device (300), a wiring electrode (330) may be formed on the planarization layer (320) as shown in FIG. 10. For example, if the semiconductor light-emitting element (350) disposed on the substrate (310) is a vertical semiconductor light-emitting element, the display device (300) may have a wiring electrode (330) formed on the planarization layer (320).

Vertical semiconductor light-emitting devices can arrange electrodes upward and downward, which is advantageous for miniaturizing semiconductor light-emitting devices. In particular, they have the advantage of being able to form a wider light-emitting area than horizontal semiconductor light-emitting devices of the same size. However, there is a problem that the light efficiency decreases as semiconductor light-emitting devices become smaller.

The conventional display device (300) includes a reflective layer (340) formed on the side of the receiving groove (311) in which the semiconductor light-emitting element (350) is installed in order to improve light extraction efficiency. The reflective layer (340) is formed by forming the receiving groove (311) on the substrate (310) and then depositing or coating a metal material having high reflectivity on the side of the receiving groove (311). Furthermore, the conventional display device (300) is formed so that the side of the receiving groove (311) has an incline. Through this structure, the reflective layer (340) formed on the side of the receiving groove (311) has a predetermined incline, thereby increasing the light directivity angle of the display device (300).

However, in the case of the conventional display device (300) structure described above, there were problems such as the light directivity angle being determined by the structure of the substrate (310) rather than the semiconductor light emitting element (350), and light loss occurring due to the material constituting the planarization layer (320) arranged between the receiving groove (311) and the semiconductor light emitting element (350).

The present invention relates to a semiconductor light-emitting element having a size of several to several tens of μm having a structure advantageous for light extraction and a display device using the same.

Hereinafter, a semiconductor light-emitting device and a display device according to the present invention will be described with reference to the attached drawings.

First, the structure of a semiconductor light-emitting device according to the present invention and the process for manufacturing the same will be described with reference to FIGS. 11 to 13.

FIG. 11(a) is a conceptual diagram showing a semiconductor light-emitting device according to the present invention, FIG. 11(b) is a cross-sectional view taken along line E-E' of FIG. 11(a), and FIG. 12 is a graph showing light extraction efficiency according to the inclination angle of a guide layer in the semiconductor light-emitting device according to FIG. 11.

The semiconductor light-emitting device (400) according to the present invention is a vertical semiconductor light-emitting device having a size of several to several tens of μm, and includes a body portion (410) and an electrode portion (420).

The body portion (410) includes a first conductive semiconductor layer (411), an active layer (413), and a second conductive semiconductor layer (412), and has a structure in which these are sequentially laminated. Specifically, an active layer (413) is formed on one side of the first conductive semiconductor layer (411), and a second conductive semiconductor layer (412) is formed on one side of the active layer (413). In addition, the side surface (410') of the body portion may have a predetermined inclination. Here, the inclination means an angle (a) of the side surface (410') of the body portion with respect to one side of the second conductive semiconductor layer (413).

The electrode portion (420) includes a first conductive electrode (421) and a second conductive electrode (422) arranged upper and lower. In detail, the first conductive electrode (421) is formed on the other surface of the first conductive semiconductor layer (411), and the second conductive electrode (422) is formed on one surface of the second conductive semiconductor layer (412).

In the body portion (410) and electrode portion (420) of the present specification, the first conductive semiconductor layer (411) and the first conductive electrode (421) mean an n-type semiconductor layer and an n-type electrode, respectively, and the second conductive semiconductor layer (412) and the second conductive electrode (422) mean a p-type semiconductor layer and a p-type electrode, respectively. However, the present invention is not limited thereto, and an embodiment in which the opposite is the case is also possible.

The semiconductor light emitting device (400) according to the present invention may include a guide layer (430) and a reflection layer (440) to improve light efficiency. In the present invention, the guide layer (430) determines the light direction angle (or divergence angle), and the reflection layer (440) may reflect light leaking to a surface other than the light emitting surface to improve the overall light extraction efficiency.

The guide layer (430) may be formed to cover at least a portion of the side surface (410') of the body portion. Specifically, the guide layer (430) may be formed to extend from the first conductive semiconductor layer (411) to the second conductive semiconductor layer (412) (or from the second conductive semiconductor layer (412) to the first conductive semiconductor layer (411)) along the side surface (410') of the body portion, and thus may cover the first conductive semiconductor layer (411), the second conductive semiconductor layer (412), and the active layer (413) disposed between the first conductive semiconductor layer (411) and the second conductive semiconductor layer (412). The guide layer (430) may be formed to cover the entire side surface (410') of the body portion, or may cover a portion of the side surface (410') of the body portion. Specifically, referring to (b) of FIG. 11, the side surface of the body portion is divided into one side and the other side, and the one side of the body portion refers to the side where the second conductive electrode (422) is arranged, and the other side of the body portion refers to the side where the first conductive electrode (421) is arranged. The guide layer (430) is formed from a point between the one side and the other side of the side surface of the body portion to the one side of the body portion. In addition, the slope of the outer surface of the guide layer (430) from the one point of the body portion to the one side of the body portion is formed differently from the slope of the side surface of the body portion.

Since the guide layer (430) has a structure that simultaneously covers the first conductive semiconductor layer (411), the second conductive semiconductor layer (412), and the active layer (413), it can be formed of an insulating material. For example, an inorganic insulating material such as SiO ₂ , SiN _x , etc. can be the material of the guide layer (430).

The guide layer (430) may be formed to have a predetermined inclination so as to determine the directionality (or divergence angle) characteristic of light output from the semiconductor light-emitting element (400). The guide layer (430) may be formed to have a different inclination from the inclination of the side surface (410') of the body portion. Here, the inclination (b) is determined by the angle (b) between one surface of the guide layer (430) and the side surface, and one surface of the guide layer (430) means a surface that is arranged horizontally parallel to one surface of the second conductive semiconductor layer (413) in FIG. 11.

According to the present invention, the guide layer (430) may be formed so that the portion covering the second conductive semiconductor layer (412) is thicker than the portion covering the first conductive semiconductor layer (411). For example, the guide layer (430) may be formed so that it gradually becomes thicker as it goes from the first conductive semiconductor layer (411) side to the second conductive semiconductor layer (412) side. When the guide layer (430) is formed, this thickness difference may determine the angle (b) of the guide layer (430). As the thickness difference between the portion covering the second conductive semiconductor layer (412) and the portion covering the first conductive semiconductor layer (413) of the guide layer (430) increases, the slope of the guide layer (430) may be formed more gently. The thickness of the guide layer (430) that determines the inclination of the guide layer (430) can be determined by controlling the etching degree, and the angle (b) of the guide layer (430) is formed between 75 degrees and 85 degrees, preferably between 77 degrees and 83 degrees, which is advantageous for light extraction efficiency (see FIG. 12).

Meanwhile, the reflection layer (440) may be formed on the side surface (410') of the body portion so as to cover at least the guide layer (430). Since the guide layer (430) is formed so as to cover the active layer (413) where light is generated, when the reflection layer (440) is formed so as to cover at least the guide layer (430), light leaking around the active layer (413) can be reflected.

In another embodiment, the reflective layer (440) may be formed to extend from the side surface (410') of the body portion to the first conductive electrode (421) so as to further cover the first conductive electrode (421). Since the reflective layer (440) is formed on all surfaces except for the area overlapping the light-emitting surface, this structure can minimize light loss, and further has the advantage of increasing the degree of freedom of the wiring process in the vertical semiconductor light-emitting device. For example, the wiring process of the vertical semiconductor light-emitting device is generally performed on the upper and lower portions of the semiconductor light-emitting device, but in the above structure, since the reflective layer (440) can form electrical contact with the wiring electrode instead of the first conductive electrode (421), it is also possible for the wiring process to be performed simultaneously on the upper or lower portion of the semiconductor light-emitting device.

Since the aforementioned reflective layer (440) must have high reflectivity and high electrical conductivity, it can be formed of a material such as silver (Ag), aluminum (Al), etc.

Next, a process for manufacturing a semiconductor light-emitting device (400) according to the present invention will be described with reference to FIG. 13.

FIGS. 13a to 13i are cross-sectional views showing a process for manufacturing a semiconductor light-emitting device according to the present invention.

First, a step of forming a body portion (410) on a growth substrate (500) is performed (FIG. 13a). For example, a sapphire substrate, a Si substrate, a SiC substrate, a GaN substrate, etc. may be prepared as the growth substrate (500). On the growth substrate (500), a first conductive semiconductor layer (411), an active layer (413), and a second conductive semiconductor layer (412) constituting the body portion (410) of the present invention may be sequentially grown through the MOCVD method, and optionally, an undoped semiconductor layer as a buffer layer (510) may be first grown before growing the first conductive semiconductor layer (411).

After growing the body portion (410) on the growth substrate (500), a step of depositing a second conductive electrode (422) on a second conductive semiconductor layer (412) may be performed. According to the present embodiment, since light generated from the semiconductor light-emitting element (400) is extracted through the second conductive electrode (422), the second conductive electrode (422) may correspond to a transparent electrode such as ITO.

Next, a step of bonding the growth substrate (500) and the donor substrate (600) is performed (Fig. 13b). The donor substrate (600) may include an adhesive layer (610) on one surface where the growth substrate (500) is bonded, and the growth substrate (500) may be bonded to the donor substrate (600) via the second conductive electrode (422).

Next, a step of removing the growth substrate (500) (FIG. 13c) and a step of removing the buffer layer (510) and depositing a first conductive electrode (421) on the first conductive semiconductor layer (411) are sequentially performed (FIG. 13d). The growth substrate (500) can be removed through a laser lift-off method (LLO), and the buffer layer (510) can be removed through dry etching or polishing. In addition, a material such as chromium (Cr), gold (Au), titanium (Ti), etc. can be deposited on the first conductive semiconductor layer (411) and utilized as the first conductive electrode (421).

Next, after forming the first conductive electrode (421) pattern, a step of forming a semiconductor light-emitting element array through isolation is performed (FIG. 13e). A photolithography process may be utilized to form the first conductive electrode (421) pattern, and then the layers constituting the body portion (410) may be dry-etched to form a semiconductor light-emitting element array. According to the present invention, dry-etching during isolation is performed until the second conductive electrode (422) is exposed, and the semiconductor light-emitting element array is formed on the donor substrate (600).

Next, a step of forming a passivation layer (430) to cover the semiconductor light-emitting element array is performed (FIG. 13f). The passivation layer (430) can be formed by a PECVD method, and a part of the passivation layer (430) can become a guide layer (430) in the semiconductor light-emitting element (400) according to the present invention.

Next, a step of etching the passivation layer (430) and etching a part of the second conductive electrode (422) to form a second conductive electrode (422) pattern is performed (FIG. 13g). In this step, a part of the passivation layer (430) covering the side surface of the body portion (410) remains without being etched to form a guide layer (430). In this step, the angle (b) of the guide layer (430) can be determined, and the guide layer (430) can be formed to have an angle (b) of 75 to 85 degrees.

The second challenge electrode (422) is selectively etched using an etching solution, and as shown in the drawing, etching can be performed starting from the exposed portion between the semiconductor light-emitting element arrays to form a pattern.

Finally, after forming a reflective layer (440) to cover the semiconductor light-emitting element array (FIG. 13h), a step of separating the semiconductor light-emitting element (400) from the donor substrate (600) (FIG. 13i) is performed. The reflective layer (440) can be deposited on the entire surface of the semiconductor light-emitting element array through the MOCVD method to cover the side surface of the body portion (410) and the first conductive electrode (421).

The semiconductor light emitting device (400) can be separated from the donor substrate (600) by the laser lift-off method (LLO).

Hereinafter, a display device composed of semiconductor light-emitting elements manufactured through a process according to FIG. 13 will be described with reference to FIGS. 14 to 17.

The display device described below may be driven by a passive matrix method or an active matrix method. In addition, the display device described below may be composed of one or two or more of red (R), green (G), and blue (B) semiconductor light-emitting elements.

Figures 14 to 17 are cross-sectional views showing a process for manufacturing a display device using a semiconductor light-emitting element according to the present invention.

The display device (1000) according to the present invention includes a substrate (1100), a planarization layer (1200), a wiring electrode (1300), and the semiconductor light-emitting elements (400) described above. Therefore, the description of the semiconductor light-emitting elements (400) below is replaced with the above-described content.

The substrate (1100) may include glass, quartz, or a polymer material, and the semiconductor light-emitting elements (400) described above may be arranged on the substrate (1100). The substrate (1100) may or may not include a receiving groove (1110). When the substrate (1100) includes a receiving groove (1110), the semiconductor light-emitting elements (400) may be seated within the receiving groove (1110). In addition, when the substrate (1100) includes a receiving groove (1110), a partition (1120) may be arranged between the receiving grooves (1110), so that the semiconductor light-emitting elements (400) may be separated from each other by the partition (1120).

A planarization layer (1200) may be formed on the substrate (1100) to fill the spaces between the semiconductor light-emitting elements (400) and cover a portion of the semiconductor light-emitting elements (400). For example, a photosensitive organic insulating material may form the planarization layer (1200). When the substrate (1100) includes a receiving groove (1110), the planarization layer (1200) may fill the space between the semiconductor light-emitting elements (400) positioned in the receiving groove (1110) and the partition wall (1120) to planarize the substrate (1100). On the other hand, when the substrate (1100) does not include the receiving groove (1110), the planarization layer (1200) may be filled to at least the same height as the semiconductor light-emitting elements (400), and the planarization layer (1200) may function as a partition wall.

Furthermore, the planarization layer (1200) may be formed to cover a portion of the semiconductor light-emitting element (400). For example, the planarization layer (1200) may be formed to cover the semiconductor light-emitting element (400) while exposing only a portion of the second conductive electrode (422) for a wiring process.

Additionally, a wiring electrode (1300) electrically connected to semiconductor light-emitting elements (400) may be placed on the substrate (1100).

According to one embodiment, since the semiconductor light-emitting device (400) in the present invention is a vertical semiconductor light-emitting device, the wiring electrode (1300) can be positioned above/below the semiconductor light-emitting device (400).

Specifically, the wiring electrode (1300) may include a first wiring electrode (1310) disposed on one surface of the substrate (1100) and electrically connected to the first conductive electrode (421), and a second wiring electrode (1320) disposed on the planarization layer (1200) and electrically connected to the second conductive electrode (422). The extension directions of the first wiring electrode (1310) and the second wiring electrode (1320) may intersect each other, and preferably, the first wiring electrode (1310) and the second wiring electrode (1320) may be arranged to be orthogonal to each other. Meanwhile, when the substrate (1100) includes a receiving groove (1110), the first wiring electrode (1310) may be arranged inside the receiving groove (1110).

In the above embodiment, a first conductive electrode (421) or a reflective layer (440) of a semiconductor light-emitting element (400) may be arranged on the first wiring electrode (1310). In the latter case, the first wiring electrode (1310) may be electrically connected to the first conductive electrode (421) through the reflective layer (440).

A solder material may be further disposed between the first wiring electrode (1310) and the first conductive electrode (421) or the reflective layer (440). The solder material may be plated in advance on the first wiring electrode (1310) and then bonded to the first conductive electrode (421) or the reflective layer (440) by thermal energy. The solder material may be a low-melting-point material, for example, at least one of antimony (Sb), palladium (Pd), silver (Ag), gold (Au), and bismuth (Bi).

In the above embodiment, the second wiring electrode (1320) may extend to the second conductive electrode (422) on the flattening layer (1200) and be electrically connected to the second conductive electrode (422). At this time, since the second conductive electrode (422) is formed on the light-emitting surface side, it may be formed as a transparent electrode or include a transparent electrode portion.

According to another embodiment, since the semiconductor light-emitting device (400) of the present invention includes a reflective layer (440) extending to the side surface (410') of the body portion, a wiring process can be performed collectively on the upper side of the semiconductor light-emitting device (400). In this case, both the first wiring electrode (1310) and the second wiring electrode (1320) can be formed on the planarization layer (1200).

In the above embodiment, the planarization layer (1200) may include a first planarization layer (1210) disposed between the semiconductor light-emitting elements (400) and a second planarization layer (1220) formed on the first planarization layer (1210) and covering a portion of the semiconductor light-emitting elements (400).

A first wiring electrode (1310) may be formed on the first planarization layer (1210) and may extend to the reflective layer (440). When the substrate (1100) includes a receiving groove (1110), the first wiring electrode (1310) may be formed across the first planarization layer (1210) and the partition wall (1120). The first wiring electrode (1310) may be in contact with the reflective layer (440) and electrically connected to the first conductive electrode (421).

In the above embodiment, the second wiring electrode (1320) may be formed on the second planarization layer (1220) and may extend from the second planarization layer (1220) to the second conductive electrode (422) and be electrically connected to the second conductive electrode (422).

According to the above embodiment, both the first wiring electrode (1310) and the second wiring electrode (1320) are arranged on the light-emitting surface side, and thus may be formed as transparent electrodes or include transparent electrode portions.

The present invention described above is not limited to the configuration and method of the embodiments described above, and the embodiments may be configured by selectively combining all or part of the embodiments so that various modifications can be made.

Claims (10)

A body portion including a first conductive semiconductor layer, an active layer formed on one surface of the first conductive semiconductor layer, and a second conductive semiconductor layer formed on one surface of the active layer;
An electrode part including a first conductive electrode formed on the other surface of the first conductive semiconductor layer and a second conductive electrode formed on the light-emitting surface side of one surface of the second conductive semiconductor layer;
A guide layer covering at least a portion of a side surface of the body portion and formed to have a different inclination from the inclination of the side surface of the body portion, and configured to determine the angle of direction of light output from the active layer; and
At least a reflective layer formed on a side surface of the body portion to cover the guide layer and configured to reflect light leaking to a surface other than the light-emitting surface,
The side of the above body part is divided into one side and the other side, and the one side of the body part refers to the side where the second conductive electrode is arranged, and the other side of the body part refers to the side where the first conductive electrode is arranged.
The above guide layer is formed from a point between one side and the other side of the side of the body part to the one side of the body part,
A semiconductor light-emitting device, characterized in that the slope of the outer surface of the guide layer from the one point of the body portion to the one side of the body portion is formed differently from the slope of the side surface of the body portion. In the first paragraph,
A semiconductor light-emitting device, characterized in that the guide layer is formed by extending from the first conductive semiconductor layer to the second conductive semiconductor layer along the side surface of the body portion. In the second paragraph,
A semiconductor light-emitting device, characterized in that the guide layer is formed so that the portion covering the second conductive semiconductor layer is thicker than the portion covering the first conductive semiconductor layer. In the first paragraph,
A semiconductor light-emitting device, characterized in that the above guide layer is formed of an insulating material. In the first paragraph,
A semiconductor light-emitting device, characterized in that the reflective layer is formed to extend from the side of the body portion to the first conductive electrode so as to further cover the first conductive electrode. substrate;
Semiconductor light emitting elements arranged on the above substrate;
A planarizing layer formed to fill between the semiconductor light-emitting elements and cover a portion of the semiconductor light-emitting elements; and
It comprises a wiring electrode disposed on the above substrate and electrically connected to the semiconductor light-emitting elements,
The above semiconductor light-emitting devices include a body portion including a first conductive semiconductor layer, an active layer formed on one surface of the first conductive semiconductor layer, and a second conductive semiconductor layer formed on a light-emitting surface side of one surface of the active layer;
An electrode part including a first conductive electrode formed on the other surface of the first conductive semiconductor layer and a second conductive electrode formed on one surface of the second conductive semiconductor layer;
A guide layer configured to cover at least a portion of a side surface of the body portion and have a different inclination from the inclination of the side surface of the body portion and to determine the angle of light output from the semiconductor light emitting element; and
At least a reflective layer formed on a side surface of the body portion to cover the guide layer and configured to reflect light leaking to a surface other than the light-emitting surface,
The side of the above body part is divided into one side and the other side, and the one side of the body part refers to the side where the second conductive electrode is arranged, and the other side of the body part refers to the side where the first conductive electrode is arranged.
The above guide layer is formed from a point between one side and the other side of the side of the body part to the one side of the body part,
A display device, characterized in that the inclination of the outer surface of the guide layer from the one point of the body portion to the one side of the body portion is formed differently from the inclination of the side surface of the body portion. In Article 6,
A display device, characterized in that the reflective layer is formed to extend from the side of the body portion to the first conductive electrode so as to further cover the first conductive electrode. In Article 6,
The above wiring electrode is a first wiring electrode disposed on one surface of the substrate and electrically connected to the first conductive electrode; and
A display device characterized by including a second wiring electrode arranged on the flattening layer so as to intersect the first wiring electrode and electrically connected to the second conductive electrode. In Article 7,
The above planarization layer is a first planarization layer disposed between the semiconductor light-emitting elements; and
A second planarization layer formed on the first planarization layer and formed to cover a portion of the semiconductor light-emitting elements,
The above wiring electrode is a first wiring electrode disposed on the first planarization layer and electrically connected to the first conductive electrode through the reflective layer; and
A display device characterized by including a second wiring electrode arranged on the second flattening layer so as to intersect the first wiring electrode and electrically connected to the second conductive electrode. In Article 6,
A display device, characterized in that the above wiring electrode includes a transparent electrode.

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