KR102765473B1 - Display device - Google Patents

Abstract

A display device of one embodiment includes a light-emitting element and an encapsulating member disposed on the light-emitting element and sealing the light-emitting element, wherein the encapsulating member is disposed on the light-emitting element and includes a first inorganic layer having a refractive index of 1.58 or more and 1.64 or less, an organic layer disposed on the first inorganic layer, and a second inorganic layer disposed on the organic layer and having a refractive index of 1.58 or more and 2.00 or less, so that efficiency can be improved and reliability can be excellent.

Description

DISPLAY DEVICE

The present invention relates to a display device, and more specifically, to a display device including an optical control layer disposed on a color control layer to reduce reflection due to external light and increase light efficiency.

A display device is a device that displays images, and various display devices used in multimedia devices such as televisions, mobile phones, tablet computers, navigation devices, and game consoles are being developed. In addition, development of self-luminous display devices that increase light utilization efficiency and improve color balance is currently underway.

A self-luminous display device includes a light-emitting element composed of an anode, a light-emitting layer, and a cathode. The light-emitting layer is very vulnerable to moisture or oxygen, and if moisture or oxygen penetrates from the outside, the light-emitting layer may deteriorate, causing various defects such as dark spots and pixel shrinkage. To improve this problem, a sealing part is used to protect the light-emitting element.

The present invention aims to provide a display device with improved efficiency.

In addition, the present invention aims to provide a display device that blocks foreign substances such as oxygen or moisture from entering from the outside and has improved reliability.

A display device according to one embodiment of the present invention includes a light-emitting element and a sealing member disposed on the light-emitting element and sealing the light-emitting element, wherein the sealing member is disposed on the light-emitting element and includes a first inorganic layer having a refractive index of 1.58 or more and 1.64 or less, an organic layer disposed on the first inorganic layer, and a second inorganic layer disposed on the organic layer and having a refractive index of 1.58 or more and 2.00 or less.

The thickness of the first weapon layer may be 0.5 μm or more and 1.5 μm or less.

The first inorganic layer may include at least one of silicon nitride, silicon nitride, and silicon oxide.

The thickness of the second weapon layer may be 0.5 μm or more and 1.5 μm or less.

The second inorganic layer may include two or more sub-inorganic layers having different refractive indices.

The second inorganic layer may include a first sub-inorganic layer having a refractive index of 1.58 or more and 1.64 or less and a second sub-inorganic layer having a refractive index of 1.80 or more and 2.00 or less.

The thickness ratio of the first sub-weapon layer to the second sub-weapon layer can be 3:1 to 5:1.

The thickness of the first sub-weapon layer may be 0.5 μm or more and 0.6 μm or less.

The thickness of the second sub-weapon layer may be 0.1 μm or more and 0.2 μm or less.

The first sub-layer may comprise silicon nitride or silicon oxide.

The second sub-weapon layer may include any one of silicon nitride, aluminum oxide, and titanium oxide.

A second sub-weapon layer may be placed on the top of the bag member.

The second inorganic layer may include silicon nitride that does not include Si-O bonds and may have a thickness of 0.15 μm or more and 0.25 μm or less.

The hydrogen content of the second weapon layer can be less than or equal to 2.8 X 10 ²² atoms/cm ³ .

The molar ratio of nitrogen to silicon throughout the second inorganic layer may be 1 or more and 1.3 or less.

The density of the second weapon layer may be greater than or equal to 2.3 g/cm ³ and less than or equal to 2.6 g/cm ³ .

The light-emitting element may include a first electrode, a second electrode disposed on the first electrode, and an intermediate layer disposed between the first electrode and the second electrode. The intermediate layer may include an emissive layer including at least one of an organic light-emitting material and a quantum dot light-emitting material.

The display device may further include a capping layer disposed between the light emitting element and the encapsulating member.

The display device may further include a cover layer disposed between the capping layer and the sealing member and having a refractive index of 1.3 or more and 1.4 or less.

The display device is disposed on the encapsulating member and may further include a color conversion layer including quantum dots.

A display device according to one embodiment of the present invention may include a light-emitting element, a first inorganic layer disposed on the light-emitting element and having a first thickness, an organic layer disposed on the first inorganic layer, and a second inorganic layer disposed on the organic layer. The second inorganic layer may include a first sub-inorganic layer having a second thickness smaller than the first thickness, and a second sub-inorganic layer disposed on the first sub-inorganic layer and having a third thickness smaller than the second thickness.

The ratio of the second thickness to the third thickness can be 3:1 to 5:1.

The first inorganic layer may have a first refractive index, the first sub-inorganic layer may have a second refractive index, and the second sub-inorganic layer may have a third refractive index greater than the first and second refractive indices. The first refractive index may be 1.58 or more and 1.64 or less, the second refractive index may be 1.58 or more and 1.64 or less, and the third refractive index may be 1.80 or more and 2.00 or less.

A display device according to one embodiment of the present invention may include a light-emitting element and a sealing member. The sealing member is disposed on the light-emitting element and may seal the light-emitting element.

The encapsulating member may include a first inorganic layer, an organic layer disposed on the first inorganic layer, and a second inorganic layer disposed on the organic layer. The second inorganic layer may include silicon nitride that does not include a Si—O bond, and may have a thickness of 0.15 μm or more and 0.25 μm or less. The second inorganic layer may have a molar ratio of nitrogen to silicon of 1 or more and 1.3 or less based on the entirety of the second inorganic layer, and may have a hydrogen content of 2.8 X 10 ²² atoms/cm ³ or less.

The density of the second inorganic layer may be 2.3 g/cm ³ or more and 2.6 g/cm ³ or less. The refractive index of the first inorganic layer may be 1.58 or more and 1.64 or less, and the refractive index of the second inorganic layer may be 1.58 or more and 2.00 or less.

According to a display device according to one embodiment of the present invention, a display device with improved efficiency can be provided.

According to a display device according to one embodiment of the present invention, foreign substances such as oxygen or moisture entering from the outside can be effectively blocked, and the reliability of the display device can be improved.

FIG. 1a is a perspective view of a combined display device according to one embodiment of the present invention.
FIG. 1b is an exploded perspective view of a display device according to one embodiment of the present invention.
FIG. 2 is a circuit diagram of one of the pixels included in a display device according to one embodiment of the present invention.
Figure 3 is a cross-sectional view corresponding to line I-I' of Figure 1b.
FIG. 4a is a cross-sectional view of a display device according to one embodiment of the present invention.
FIG. 4b is a graph showing the efficiency of a display device according to one embodiment of the present invention including a blue light-emitting layer and a comparative example display device.
FIG. 4c is a graph showing the efficiency of a display device according to one embodiment of the present invention including a white light-emitting layer and a comparative example display device.
FIG. 5a is a cross-sectional view of a display device according to one embodiment of the present invention.
FIG. 5b is a graph showing the efficiency of a display device according to one embodiment of the present invention and a comparative example display device.
FIGS. 6A to 6C are cross-sectional views of a display device according to one embodiment of the present invention.
FIGS. 7A and 7B are cross-sectional views of a display device according to one embodiment of the present invention.

In this specification, when a component (or region, layer, portion, etc.) is referred to as being “on,” “connected to,” or “coupled to” another component, it means that it can be directly disposed/connected/coupled to the other component, or that a third component may be disposed between them.

Meanwhile, "directly placed" may mean that there are no additional layers, films, regions, plates, etc., between one part, such as a layer, film, region, or plate, and another part. For example, "directly placed" may mean placing two layers or two parts without using an additional part, such as an adhesive material, between them.

Identical drawing symbols refer to identical components. Also, in the drawings, the thicknesses, proportions, and dimensions of components are exaggerated for the purpose of effectively explaining the technical contents.

“And/or” includes any combination of one or more of the associated constructs that can be defined.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are only used to distinguish one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component. The singular expression includes the plural expression unless the context clearly indicates otherwise.

Additionally, terms such as “below,” “lower,” “above,” and “upper,” are used to describe the relationships between components depicted in the drawings. These terms are relative concepts and are described based on the directions indicated in the drawings.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. In addition, terms that are defined in commonly used dictionaries, such as terms, should be interpreted as having a meaning consistent with the meaning in the context of the relevant art, and are explicitly defined herein, unless they are interpreted in an idealized or overly formal sense.

It should be understood that the terms "include" or "have" are intended to specify the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification, but do not exclude in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1A is a perspective view of a display device according to an embodiment of the present invention. FIG. 1B is an exploded perspective view of a display device according to an embodiment of the present invention. FIG. 2 is a circuit diagram of one of the pixels included in a display device according to an embodiment of the present invention.

Referring to FIGS. 1A and 1B, a display device (DD) according to one embodiment of the present invention includes a base member (BS), a display layer (DL) disposed on the base member (BS), and an encapsulation member (EN) disposed on the display layer (DL).

In one embodiment, a display device (DD) having a flat display surface is illustrated, but is not limited thereto. The display device (DD) may include a curved display surface or a three-dimensional display surface. The three-dimensional display surface may include a plurality of display areas indicating different directions, and may include, for example, a polygonal columnar display surface.

The display device (DD) according to one embodiment may be a rigid display device or a flexible display device. If the display device (DD) is a flexible display device, it may be a foldable display device.

The display device (DD) includes a display area (DA) and a non-display area (NDA). The display area (DA) displays an image. When viewed in the thickness direction of the display device (DD), the display area (DA) may have an approximately rectangular shape, but is not limited thereto.

The display area (DA) includes a plurality of pixel areas (PX-B, PX-G, PX-R). The pixel areas (PX-B, PX-G, PX-R) can be arranged in a matrix form. The pixel areas (PX-B, PX-G, PX-R) can be defined by a pixel defining layer (PDL; see FIG. 3). A pixel (PX; see FIG. 2) can be arranged in each of the pixel areas (PX-B, PX-G, PX-R). Each of the pixels includes a light-emitting element (ED; see FIG. 2). In the present invention, the pixel can be an emissive pixel or a transmissive pixel.

The display device (DD) may include a first pixel region, a second pixel region, and a third pixel region that emit light of different wavelengths. In one embodiment illustrated in FIG. 1B, the first pixel region may be a blue pixel region (PX-B), the second pixel region may be a green pixel region (PX-G), and the third pixel region may be a red pixel region (PX-R). That is, in one embodiment, the display device (DD) may include a blue pixel region (PX-B), a green pixel region (PX-G), and a red pixel region (PX-R). The blue pixel region (PX-B) is a blue light-emitting region that emits blue light, and the green pixel region (PX-G) and the red pixel region (PX-R) represent a green light-emitting region and a red light-emitting region, respectively.

The non-display area (NDA) does not display an image. When viewed in the thickness direction (DR3) of the display device (DD), the non-display area (NDA) may, for example, surround the display area (DA). The non-display area (NDA) may be adjacent to the display area (DA) in the first direction (DR1) and the second direction (DR2).

Referring to FIG. 2, each of the pixels (PX) can be connected to a wiring section consisting of a gate line (GL), a data line (DAL), and a driving voltage line (DVL). Each of the pixels (PX) includes a thin film transistor (TFT1, TFT2) connected to the wiring section, a light emitting element (ED) connected to the thin film transistor (TFT1, TFT2), and a capacitor (Cst).

A gate line (GL) extends in a first direction (DR1). A data line (DAL) extends in a second direction (DR2) intersecting the gate line (GL). A driving voltage line (DVL) extends in substantially the same direction as the data line (DAL), i.e., in the second direction (DR2). The gate line (GL) transmits a scan signal to the thin film transistors (TFT1, TFT2), the data line (DAL) transmits a data signal to the thin film transistors (TFT1, TFT2), and the driving voltage line (DVL) provides a driving voltage to the thin film transistors (TFT1, TFT2).

The thin film transistors (TFT1, TFT2) may include a driving thin film transistor (TFT2) for controlling the light emitting element (ED), and a switching thin film transistor (TFT1) for switching the driving thin film transistor (TFT2). In one embodiment of the present invention, each of the pixels (PX) includes two thin film transistors (TFT1, TFT2), but is not limited thereto, and each of the pixels (PX) may include one thin film transistor and a capacitor, or each of the pixels (PX) may have three or more thin film transistors and two or more capacitors.

Although not specifically illustrated, the switching thin film transistor (TFT1) includes a first gate electrode, a first source electrode, and a first drain electrode. The first gate electrode is connected to a gate line (GL), and the first source electrode is connected to a data line (DAL). The first drain electrode is connected to a first common electrode via a contact hole. The switching thin film transistor (TFT1) transmits a data signal applied to the data line (DAL) to the driving thin film transistor (TFT2) according to a scan signal applied to the gate line (GL).

The light emitting element (ED) includes a first electrode connected to a driving thin film transistor (TFT2) and a second electrode receiving a second power supply voltage. The light emitting element (ED) may include a light emitting pattern disposed between the first electrode and the second electrode.

The light-emitting element (ED) emits light during the turn-on period of the driving thin film transistor (TFT2). The color of the light generated from the light-emitting element (ED) is determined by the material forming the light-emitting pattern. For example, the color of the light generated from the light-emitting element (ED) can be any one of red, green, blue, and white.

Referring again to FIGS. 1a and 1b, the encapsulating member (EN) is disposed on the base member (BS) and the display layer (DL). The encapsulating member (EN) covers the display layer (DL). The encapsulating member (EN) protects the display layer (DL) from external oxygen, moisture, and contaminants. A detailed description of the encapsulating member (EN) will be described later.

Figure 3 is a cross-sectional view corresponding to line I-I' of Figure 1b.

Referring to FIG. 3, the display device (DD) includes a base member (BS), a display layer (DL), a capping layer (CAL), a cover layer (COL), and an encapsulating member (EN). The base member (BS) may include a base layer (SUB), a buffer layer (BFL), and a thin film transistor (TFT).

The base layer (SUB) is not particularly limited as long as it is commonly used, but may be formed of an insulating material such as glass, plastic, or crystal. Organic polymers forming the base layer (SUB) include PET (Polyethylene terephthalate), PEN (Polyethylene naphthalate), polyimide, and polyethersulfone. The base layer (SUB) may be selected in consideration of mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and waterproofing.

A functional layer may be arranged on the base layer (SUB). In Fig. 3, a buffer layer (BFL) is illustrated as an example of being arranged as the functional layer, but the functional layer may also include a barrier layer. The buffer layer (BFL) may have a function of improving the bonding strength between the base member (BS) and the display layer (DL), and the barrier layer may have a function of preventing foreign substances from entering the display layer (DL).

A thin film transistor (TFT) may be arranged on the buffer layer (BFL). The thin film transistor (TFT) may include a driving thin film transistor for controlling the light emitting element (ED) and a switching thin film transistor for switching the driving thin film transistor.

A thin film transistor (TFT) may include a semiconductor layer (SM), a gate electrode (GE), a source electrode (SE), and a drain electrode (DE). The semiconductor layer (SM) is formed of a semiconductor material and acts as an active layer of the thin film transistor (TFT). The semiconductor layer (SM) may be formed by selecting from an inorganic semiconductor or an organic semiconductor, respectively.

A gate insulating layer (GI) is provided on the semiconductor layer (SM). The gate insulating layer (GI) covers the semiconductor layer (SM). The gate insulating layer (GI) may include at least one of an organic insulating material and an inorganic insulating material.

A gate electrode (GE) is provided on the gate insulating layer (GI). The gate electrode (GE) can be formed to cover an area corresponding to a channel area of the semiconductor layer (SM).

A source electrode (SE) and a drain electrode (DE) are provided on an interlayer insulating layer (IL). The drain electrode (DE) can be in contact with a drain region of the semiconductor layer (SM) through a contact hole formed in the gate insulating layer (GI) and the interlayer insulating layer (IL), and the source electrode (SE) can be in contact with a source region of the semiconductor layer (SM) through a contact hole formed in the gate insulating layer (GI) and the interlayer insulating layer (IL).

A passivation layer (PL) is provided on the source electrode (SE), the drain electrode (DE), and the interlayer insulating layer (IL). The passivation layer (PL) may function as a protective film that protects the thin film transistor (TFT) or may function as a planarizing film that planarizes the upper surface thereof.

The display layer (DL) may include a light emitting element (ED) and a pixel defining layer (PDL).

A light-emitting element (ED) is provided on a passivation layer (PL). The light-emitting element (ED) includes a first electrode (EL1), a second electrode (EL2) disposed on the first electrode (EL1), and an intermediate layer (CL) disposed between the first electrode (EL1) and the second electrode (EL2). The light-emitting element (ED) may be a front-emitting type. However, the present invention is not limited thereto, and the light-emitting element (ED) may be a back-emitting type.

The first electrode (EL1) may be a pixel electrode or an anode. The first electrode (EL1) may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode. When the first electrode (EL1) is a transmissive electrode, the first electrode (EL1) may include a transparent metal oxide, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium tin zinc oxide (ITZO). When the first electrode (EL1) is a semi-transmissive electrode or a reflective electrode, the first electrode (EL1) may include Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a mixture of metals.

The second electrode (EL2) may be a common electrode or a cathode. The second electrode (EL2) may be a transmissive electrode, a semi-transmissive electrode or a reflective electrode. When the second electrode (EL2) is a transmissive electrode, the second electrode (EL2) may include Li, Ca, LiF/Ca, LiF/Al, Al, Mg, BaF, Ba, Ag or a compound or mixture thereof (for example, a mixture of Ag and Mg). However, the present invention is not limited thereto, and may include, for example, ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide) or ITZO (indium tin zinc oxide). When the second electrode (EL2) is a semi-transmissive electrode or a reflective electrode, the second electrode (EL2) may include Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF/Ca, LiF/Al, Mo, Ti, or a compound or mixture thereof (for example, a mixture of Ag and Mg). Or, it may have a multi-layer structure including a reflective film or a semi-transmissive film formed of the above materials and a transparent conductive film formed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or the like.

A pixel defining layer (PDL) may be arranged on the first electrode (EL1). Specifically, the pixel defining layer (PDL) may cover a part of the first electrode (EL1) and expose another part. Although not limited thereto, the pixel defining layer (PDL) may include a metal-fluorine ion compound. For example, the pixel defining layer (PDL) may be composed of a metal-fluorine ion compound of any one of LiF, BaF ₂ , and CsF. When the metal-fluorine ion compound has a predetermined thickness, it has an insulating property.

A pixel defining layer (PDL) can define an aperture (PDL-OP). The aperture (PDL-OP) of the pixel defining layer (PDL) can define a light-emitting area.

An intermediate layer (CL) may be placed between the first electrode (EL1) and the second electrode (EL2). The intermediate layer (CL) may be placed in an opening (PDL-OP) defined in a pixel defining layer (PDL). The intermediate layer (CL) may overlap an emission area defined by the opening (PDL-OP) of the pixel defining layer (PDL). The intermediate layer (CL) will be described in more detail with reference to FIG. 4a below.

The encapsulating member (EN) includes a first inorganic layer (IOL1), an organic layer (OL), and a second inorganic layer (IOL2). However, the present invention is not limited thereto, and may additionally include inorganic layers and organic layers. The encapsulating member (EN) is disposed on the light-emitting element (ED) and seals the light-emitting element (ED).

A first inorganic layer (IOL1) is disposed on a display layer (DL). The first inorganic layer (IOL1) is disposed on a light-emitting element (ED). Specifically, the first inorganic layer (IOL1) may be disposed closer to the light-emitting element (ED) than the second inorganic layer (IOL2). The first inorganic layer (IOL1) may be disposed in contact with a second electrode (EL2) of the light-emitting element (ED). The first inorganic layer (IOL1) may be disposed to overlap the light-emitting element (ED) and the pixel defining film (PDL). The first inorganic layer (IOL1) may include an inorganic material. The first inorganic layer (IOL1) may be formed by a deposition method or the like, and may be formed, for example, by using a plasma-enhanced CVD (PECVD). The first inorganic layer (IOL1) can function as a barrier film to encapsulate the light-emitting element (ED) and prevent foreign substances from entering the light-emitting element (ED).

An organic layer (OL) is disposed on a first inorganic layer (IOL1). The organic layer (OL) may be disposed directly on the first inorganic layer (IOL1). The organic layer (OL) has a predetermined thickness and may function as a protective film for protecting a light emitting element (ED), may relieve internal stress of an encapsulating member (EN), and may function as a planarizing film for planarizing an upper surface. The organic layer (OL) may include an organic material, and may include, for example, an acrylic resin, an epoxy resin, polyimide, and polyethylene, but is not limited thereto. The refractive index of the organic layer (OL) including the organic material may be 1.35 to 1.55. The organic layer (OL) may be formed by a deposition method, a coating method, or the like.

The second inorganic layer (IOL2) is disposed on the organic layer (OL). The second inorganic layer (IOL2) can be directly disposed on the organic layer (OL). The second inorganic layer (IOL2) can be disposed to overlap the light emitting element (ED) and the pixel defining layer (PDL). The second inorganic layer (IOL2) can completely overlap the first inorganic layer (IOL1) in a plane. The second inorganic layer (IOL2) includes an inorganic material. The second inorganic layer (IOL2) can include the same inorganic material as the inorganic material included in the first inorganic layer (IOL1), or can include a different inorganic material. The second inorganic layer (IOL2) can be formed by a deposition method or the like, and can be formed by, for example, using a plasma-enhanced CVD (PECVD) method or an inductively coupled plasma chemical vapor deposition (ICPCVD). The second inorganic layer (IOL2) can function as a barrier film to encapsulate the light-emitting element (ED) and prevent foreign substances from entering the light-emitting element (ED).

The display device (DD) may further include a capping layer (CAL). The capping layer (CAL) may be arranged between the light emitting element (ED) and the encapsulating member (EN). The capping layer (CAL) may be arranged to cover the second electrode (EL2). The capping layer (CAL) may be arranged between the second electrode (EL2) and the first inorganic layer (IOL1).

The capping layer (CAL) may have light transmittance and may play a role of protecting the light emitting element (ED). In addition, the capping layer (CAL) may play a role of helping light generated from the light emitting layer to be efficiently emitted to the outside. The capping layer (CAL) may include at least one of an inorganic material and an organic material having light transmittance. In addition, the capping layer (CAL) may be made of two or more materials having different refractive indices. For example, the capping layer (CAL) may be made by using a mixture of a high refractive index material and a low refractive index material. The high refractive index material and the low refractive index material may be either organic or inorganic materials. The thickness of the capping layer (CAL) is not particularly limited, and may be, for example, 30 nm or more and 1000 nm or less.

The display device (DD) may further include a cover layer (COL). The cover layer (COL) may be arranged between the light-emitting element (ED) and the encapsulating member (EN). In addition, the cover layer (COL) may be arranged between the capping layer (CAL) and the encapsulating member (EN). The cover layer (COL) may have a refractive index of 1.3 or more and 1.4 or less. The cover layer (COL) may play a role in helping light generated from the light-emitting layer to be efficiently emitted to the outside. The material included in the cover layer (COL) is not particularly limited, and may include, for example, lithium fluoride (LiF).

FIG. 4a is a cross-sectional view of a display device (DD-1) according to an embodiment of the present invention, and FIGS. 4b and 4c are graphs showing relative efficiencies of a display device (DD-1, DD-1') according to an embodiment of the present invention and a comparative example display device (Com-DD1, Com-DD1').

In Fig. 4a, the base member (BS) in comparison with Fig. 3 is schematically illustrated. Hereinafter, a detailed description of the same configuration as the display device described with reference to Figs. 1 to 3 is omitted.

Referring to FIG. 4a, the intermediate layer (CL) may include an emitting layer (EML). The emitting layer (EML) may emit any one of red, green, blue, and white. The emitting layer (EML) may be a single layer. In addition, the emitting layer (EML) may have a multilayer structure referred to as a tandem. For example, it may have a two-layer tandem structure such as blue emitting layer/blue emitting layer, blue emitting layer/yellow emitting layer, or blue emitting layer/green emitting layer, and it may have a three-layer tandem structure such as blue emitting layer/blue emitting layer/blue emitting layer, blue emitting layer/yellow emitting layer/blue emitting layer, blue emitting layer/green emitting layer/blue emitting layer. In addition, a charge generation layer may be further included between the emitting layers.

The emission layer (EML) may include an emission material. The type of the emission material is not particularly limited, and may be an organic compound and/or an inorganic compound. In one embodiment, the emission material may be a quantum dot material. The core of the quantum dot may be selected from a group II-VI compound, a group III-V compound, a group IV-VI compound, a group IV element, a group IV compound, and a combination thereof.

The intermediate layer (CL) may further include a plurality of common layers in addition to the emitting layer. Specifically, the intermediate layer (CL) may be formed by sequentially stacking a hole transport region (HTR), an emitting layer (EML), and an electron transport region (ETR). The hole transport region (HTR) is provided on the first electrode (EL1) and may include at least one of a hole injection layer, a hole transport layer, a hole buffer layer, and an electron blocking layer. The electron transport region (ETR) is provided on the emitting layer (EML) and may include at least one of a hole blocking layer, an electron transport layer, and an electron injection layer.

The encapsulation member (EN) includes a first inorganic layer (IOL1), an organic layer (OL) directly disposed on the first inorganic layer (IOL1), and a second inorganic layer (IOL2) directly disposed on the organic layer (OL).

In one embodiment, the first inorganic layer (IOL1) may have a refractive index of 1.64 or less. When the refractive index of the first inorganic layer (IOL1) exceeds 1.64, the difference in refractive indices between the first inorganic layer (IOL1) and the organic layer (OL) increases, so that the ratio of light emitted from the light-emitting layer (EML) that is reflected at the interface between the first inorganic layer (IOL1) and the organic layer (OL) increases. Accordingly, the microcavity effect of the light-emitting element is affected, thereby reducing the efficiency of the display device (DD-1).

Referring to FIGS. 4b and 4c, the difference in light efficiency of the display device according to the refractive index of the first inorganic layer (IOL1) can be confirmed. The efficiency of the display device (DD-1) was evaluated by measuring the current-voltage-luminance (IVL) characteristics. The comparative example and the embodiment have the same structure as the display device (DD-1) according to 4a, except that only the refractive index of the first inorganic layer (IOL1) of the sealing member (EN) is different. In the graph, the same structure is omitted, and only the structure of the sealing member is shown. Specifically, the comparative display devices (Com-DD1, Com-DD1') include an encapsulating member including a first inorganic layer (IOL1') containing silicon nitride and having a refractive index of 1.76, an organic layer (OL), and a second inorganic layer (IOL2) having a refractive index of 1.90, and the display devices (DD-1, DD-1') of one embodiment include an encapsulating member including a first inorganic layer (IOL1) containing silicon nitride and having a refractive index of 1.60, an organic layer (OL), and a second inorganic layer (IOL2) having a refractive index of 1.90.

FIG. 4b is a graph showing relative light efficiency when the display device includes a blue light-emitting layer. When the efficiency of the comparative display device (Com-DD1) is 100%, the display device (DD-1) according to one embodiment exhibited efficiency of about 102%, which is 2% higher than the comparative example. FIG. 4c is a graph showing relative light efficiency when the display device includes a white light-emitting layer. When the efficiency of the comparative display device (Com-DD1') is 100%, the display device (DD-1') according to one embodiment exhibited efficiency of about 103.5%, which is 3.5% higher than the comparative example. It is judged that the efficiency of the display device is improved as the refractive index of the first inorganic layer (IOL1) is lowered, thereby reducing the interface reflection between the first inorganic layer (IOL1) and the organic layer (OL). Therefore, the display device (DD, DD-1, DD-1') according to the present invention can have improved efficiency by controlling the refractive index of the first inorganic layer (IOL1) to 1.64 or less.

In addition, in one embodiment, the first inorganic layer (IOL1) may have a refractive index of 1.58 or more. When the refractive index of the first inorganic layer (IOL1) is less than 1.58, the function of the barrier film deteriorates and the light emitting element (ED) cannot be properly prevented from being exposed to oxygen, moisture, foreign substances, etc. In particular, as a result of a WHTS (Wet High Temperature Storage) measurement test, when the refractive index of the first inorganic layer (IOL1) is less than 1.58, a large number of dark spots, etc. occurred and the display device was evaluated as defective or unusable, but when the refractive index of the first inorganic layer (IOL1) is 1.58 or more, the display device was evaluated as good. Here, the WHTS measurement test is a high-temperature, high-humidity storage test, which refers to qualitatively evaluating whether dark spots, etc. occur by leaving the display device in an oven at 85°C and 85% humidity for 500 hours. Accordingly, the display device (DD, DD-1, DD-1') according to the present invention can improve reliability by controlling the refractive index of the first inorganic layer (IOL1) to be 1.58 or higher, so that the first inorganic layer (IOL1) effectively performs the function of a barrier film.

In one embodiment, the thickness of the first inorganic layer (IOL1) may be greater than or equal to 0.5 μm and less than or equal to 1.5 μm. The thickness of the first inorganic layer (IOL1) may be greater than or equal to the thickness of the second inorganic layer (IOL2). In another embodiment, the thickness of the first inorganic layer (IOL1) may be greater than or equal to 0.7 μm and less than or equal to 1.2 μm.

In one embodiment, the first inorganic layer (IOL1) can include an inorganic material having a relatively low absorption coefficient, and can include, for example, but not limited to, at least one of silicon oxynitride (SiON), silicon nitride (SiN), and silicon oxide (SiO). The first inorganic layer (IOL1) can effectively perform the function of a barrier film by controlling a thickness range and including an inorganic material having a relatively low absorption coefficient, thereby minimizing the amount of light absorbed by the first inorganic layer (IOL1), thereby preventing a decrease in the efficiency of the display device (DD, DD-1, DD-1').

In one embodiment, the thickness of the organic layer (OL) can be greater than or equal to 0.5 μm and less than or equal to 1.3 μm. The organic layer (OL) can be a single layer, or can include a plurality of layers.

In one embodiment, the second inorganic layer (IOL2) can have a refractive index of 1.58 or more and 2.00 or less. In one embodiment, the thickness of the second inorganic layer (IOL2) can be 0.1 μm or more and 1.5 μm or less. In another embodiment, the thickness of the second inorganic layer (IOL2) can be 0.1 μm or more and 1.0 μm or less. The second inorganic layer (IOL2) can be a single layer, or can include a plurality of sub-inorganic layers. When the second inorganic layer (IOL2) includes a plurality of sub-inorganic layers, each of the sub-layers can have the same or different refractive index and/or thickness within the above range, which will be described in detail later.

Referring again to FIG. 4a, in one embodiment, when the second inorganic layer (IOL2) is a single layer, the thickness of the second inorganic layer (IOL2) may be 0.15 μm or more and 0.25 μm or less, more preferably 0.15 μm or more and 0.2 μm or less. The second inorganic layer (IOL2) may include silicon nitride (SI _x N _y , where x and y are each independently an integer greater than or equal to 1 and less than or equal to 5). For example, the second inorganic layer may be composed of silicon nitride such as Si ₃ N ₄ .

The silicon nitride may not contain a Si-O (silicon-oxygen) bond. Additionally, the hydrogen content per unit volume (cm ³ ) in the silicon nitride may be greater than or equal to 0 atom/cm ³ and less than or equal to 2.8 X 10 ²² atoms/cm ³ . The molar ratio of nitrogen to silicon in the silicon nitride may be greater than or equal to 1 and less than or equal to 1.3.

When silicon nitride satisfies the conditions described above, the absorption coefficient of silicon nitride for light having a center wavelength of about 460 nm can converge to 0. Accordingly, the amount of blue light emitted from the light-emitting layer (EML) absorbed by the second inorganic layer (IOL2) decreases, so that the blue light emission efficiency of the display device (DD) can be improved.

When the second inorganic layer (IOL2) includes silicon nitride satisfying the conditions described above, the density of the second inorganic layer (IOL2) can be 2.3 g/cm ³ or more and 2.6 g/cm ³ or less. Accordingly, the barrier properties are excellent, and moisture penetration from the outside can be prevented more effectively.

When the thickness of the second inorganic layer (IOL2) is 0.15 μm or more and 0.25 μm or less, damage to the encapsulating member (EN) can be prevented even when the encapsulating member (EN) is applied to a foldable display device and folded multiple times. Accordingly, since external moisture penetration due to damage to the encapsulating member (EN) is prevented, the durability of the display device (DD) can be improved. When the thickness of the second inorganic layer (IOL2) is less than 0.15 μm, the moisture resistance of the encapsulating member (EN) may be deteriorated, and when the thickness of the second inorganic layer (IOL2) exceeds 0.25 μm, the durability of the encapsulating member (EN) may be reduced when the encapsulating member (EN) is applied to a foldable display device.

Hereinafter, the effects of the second inorganic layer (IOL2) and the display device (DD) including the same according to one embodiment of the present invention will be specifically described with reference to examples and comparative examples.

The display devices of Example 1 and Comparative Example 1 have the same laminated structure as the display device (DD-1) illustrated in Fig. 4a. The display devices of Example 1 and Comparative Example 1 were formed with the same materials and structure except for the second inorganic layer.

The display device of Example 1 formed a second inorganic layer of 0.2 μm by depositing silicon nitride. The display device of Comparative Example 1 formed a second inorganic layer of 0.7 μm by depositing silicon nitride.

The properties of the second inorganic layer of Example 1 and Comparative Example 1 are as shown in Table 1 below.

Analysis items Example 1 Comparative Example 1 Absorption coefficient (M ^-1 cm ^-1 ) 0 4.8 X 10 ^-3 Si-O bond doesn't exist There is Hydrogen content (atom/cm ³ ) 3.24x10 ²² 2.58x10 ²² Composition ratio (N/Si ^2p ) 49.86/48.50 47.94/50.50 density 2.520 g/cm ³ 2.101 g/cm ³

The second inorganic layers according to Example 1 and Comparative Example 1 were measured using Fourier transform infrared spectroscopy. As a result, no peak corresponding to Si-O bonds was detected in the second inorganic layer of Example 1, whereas a peak corresponding to Si-O bonds was detected in the second inorganic layer of Comparative Example 1. Therefore, it can be seen that the second inorganic layer of Example 1 does not include Si-O bonds. The hydrogen content of the second inorganic layers of Example 1 and Comparative Example 1 was measured using a dynamic secondary ion mass spectrometer (D-SIMS).

The molar ratios of nitrogen and silicon of the second inorganic layer of Example 1 and Comparative Example 1 were measured using X-ray photoelectron spectroscopy (XPS). Si ^2p is a measurement of the molar number of 2p orbitals of Si. The molar ratios of nitrogen and silicon of the second inorganic layer of Example 1 were found to be 49.86% and 48.50%, indicating that the molar ratio of nitrogen to silicon of the second inorganic layer of Example 1 was 1 or greater. The molar ratios of nitrogen and silicon of the second inorganic layer of Comparative Example 1, measured by the same method, were found to be 47.94% and 50.50%, indicating that the molar ratio of nitrogen to silicon of the second inorganic layer of Comparative Example 1 was 1 or less.

The density of the second inorganic layer of Example 1 and Comparative Example 1 was measured using X-ray reflectometry.

The absorption coefficients of the second inorganic layer of Example 1 and Comparative Example 1 were measured based on blue light having a center wavelength of 460 nm.

The refractive index of the second inorganic layer of Example 1 and Comparative Example 1 was 1.9.

The MVTR (Moisture vapor transmission rate) value was measured using the display devices of Example 1 and Comparative Example 1. The MVTR measurement results are shown in Table 2 below.

Example 1 Comparative Example 1 MVTR(g/ ^m2day ) 2.0 X 10 ^-6 3.1 X 10 ^-6

The display device according to Example 1 exhibited low moisture permeability despite having a thinner thickness than Comparative Example 1. The second inorganic layer of Example 1 does not include Si-O bonds, has a molar ratio of nitrogen to silicon of 1 or more, and has a molecular weight of 2.8 X 10 ²² atoms/cm ³ It has a low hydrogen content and a high density compared to Comparative Example 1. Therefore, it appears that the second inorganic layer of Example 1 has excellent barrier properties and exhibits low moisture permeability. Meanwhile, in order to measure the light durability of the display device according to one embodiment, the change in light transmittance according to the degree of light exposure of the display device according to the Examples and Comparative Examples was measured, and the measurement results are shown in Table 3. The change in light transmittance was measured by the following method.

The change in light transmittance 1 is a value measured twice in total based on deep blue light having a center wavelength of 405 nm, and the change in light transmittance 2 is a value measured twice in total based on deep blue light having a center wavelength of 430 nm.

Example 2 and Comparative Example 2 each deposited the second inorganic layer to a thickness of 2 μm, Example 3 and Comparative Example 3 each deposited the second inorganic layer to a thickness of 4 μm, and Example 4 and Comparative Example 4 each deposited the second inorganic layer to a thickness of 7 μm. The properties of the second inorganic layers of Examples 2 to 4 are the same as the properties of Example 1 shown in Table 1, and the properties of the second inorganic layers of Comparative Examples 2 to 4 are the same as the properties of Comparative Example 1 shown in Table 1.

The change in transmittance according to the examples and comparative examples was calculated by measuring the light transmittance before exposure to light and the light transmittance after exposure to light for a total of 40 cycles, and calculating the ratio of change in light transmittance before and after exposure to light. During one cycle, the display device was exposed to light having an intensity of 1120 Watts (W) for 8 hours.

When the transmittance increased, the change in transmittance was indicated as a negative value, and when the transmittance decreased, the change in transmittance was indicated as a positive value.

Transmittance change 1 (1 time/2 times) (%) Transmittance change 2 (1 time/2 times) (%) Example 2 -0.4 / -0.2 -0.3 / -0.1 Example 3 -0.1 / 0.0 0.1 / 0.1 Example 4 0.1 / 0.12 0.0 / 0.1 Comparative Example 2 5.0 / 5.1 0.7 / 1.0 Comparative Example 3 12.6 / 12.1 1.0 / 1.0 Comparative Example 4 14.5 / 13.7 4.0 / 4.3

As shown in Table 3, in the cases of Examples 2 to 4, there was no substantial change in transmittance even when the display device was exposed to light. In the cases of Comparative Examples 2 to 4, the transmittance decreased after the display device was exposed to light, and in particular, the transmittance of light having a center wavelength of 405 nm significantly decreased, and the transmittance decreased further as the thickness of the second inorganic layer increased. In addition, as shown in Comparative Example 4, when the second inorganic layer was formed to a thickness of 7 μm, the transmittance for light having a center wavelength of 430 nm significantly decreased. It is judged that Examples 2 to 4 had high durability by including the second inorganic layer having the properties described in Table 1, so that there was little change in transmittance due to light damage. In the cases of Comparative Examples 2 to 4, since the second inorganic layer had low durability, it is judged that the second inorganic layer was damaged by light, which caused the transmittance to decrease. In addition, as the thickness of the second layer of armor increases, the damaged area increases, and thus the rate of decrease in transmittance is judged to increase.

Hereinafter, with reference to FIGS. 5a and 5b, examples and comparative examples, the effects of a second inorganic layer (IOL2) including a plurality of sub-inorganic layers and a display device including the same will be specifically described.

Fig. 5a is a cross-sectional view of a display device (DD-2) according to one embodiment of the present invention, and Fig. 5b is a graph showing the relative efficiency of a display device (DD-2) according to one embodiment of the present invention and a comparative example display device (Com-DD2). Hereinafter, a detailed description of the same configuration as the display device described with reference to Figs. 1 to 4c is omitted.

Referring to FIG. 5a, the display device (DD-2) includes an encapsulating member (EN-1), and the encapsulating member (EN-1) may include a second inorganic layer (IOL2) including a plurality of sub-inorganic layers. The second inorganic layer (IOL2) may include a first sub-inorganic layer (Sub-IOL1) and a second sub-inorganic layer (Sub-IOL2) having different refractive indices and thicknesses.

When the second inorganic layer (IOL2) includes two sub-inorganic layers (Sub-IOL1, Sub-IOL2), the thickness of the second inorganic layer (IOL2) may be 0.5 μm or more and 1.5 μm or less. For example, the thickness of the second inorganic layer (IOL2) may be 0.5 μm or more and 1.0 μm or less.

The first sub-inorganic layer (Sub-IOL1) may be directly disposed on the organic layer (OL). The refractive index of the first sub-inorganic layer (Sub-IOL1) may be the same as or similar to the refractive index of the first inorganic layer (IOL1), and may be, for example, 1.58 or more and 1.64 or less. Since the first sub-inorganic layer (Sub-IOL1) is directly disposed on the organic layer (OL), the refractive index may be controlled similarly to that of the first inorganic layer (IOL1) in order to prevent a decrease in the efficiency of the display device (DD-2) and effectively perform the function of a barrier film.

The thickness of the first sub-inorganic layer (Sub-IOL1) may be less than the thickness of the first inorganic layer (IOL1) and greater than the thickness of the second sub-inorganic layer (Sub-IOL2). In one embodiment, the thickness of the first sub-inorganic layer (Sub-IOL1) may be greater than or equal to 0.5 μm and less than or equal to 0.6 μm.

In one embodiment, the first sub-inorganic layer (Sub-IOL1) can include an inorganic material having a relatively low absorption coefficient, for example, but not limited to, silicon oxynitride (SiON) or silicon oxide (SiO). The first sub-inorganic layer (Sub-IOL1) can effectively perform the function of a barrier film by controlling a range of thickness and refractive index and including an inorganic material having a relatively low absorption coefficient, thereby minimizing the amount of light absorbed by the first sub-inorganic layer (Sub-IOL1), thereby preventing a decrease in the efficiency of the display device (DD-2).

The second sub-inorganic layer (Sub-IOL2) may be disposed on the first sub-inorganic layer (Sub-IOL1). The second sub-inorganic layer (Sub-IOL2) may be disposed on the uppermost part of the sealing member (EN-1). The second sub-inorganic layer (Sub-IOL2) disposed on the uppermost part of the sealing member (EN-1) has the most important function of preventing oxygen, moisture, foreign substances, etc. from entering the light emitting element (ED). Therefore, the refractive index of the second sub-inorganic layer (Sub-IOL2) may be greater than the refractive indices of the first inorganic layer (IOL1) and the first sub-inorganic layer (Sub-IOL1). In one embodiment, the refractive index of the second sub-inorganic layer (Sub-IOL2) may be 1.80 or more and 2.00 or less.

The thickness (t2) of the second sub-inorganic layer (Sub-IOL2) may be smaller than the thickness (t1) of the first sub-inorganic layer (Sub-IOL1). In one embodiment, the thickness (t2) of the second sub-inorganic layer (Sub-IOL2) may be 0.1 μm or more and 0.2 μm or less. Since the second sub-inorganic layer (Sub-IOL2) having a high refractive index has a high absorption coefficient compared to the first sub-inorganic layer (Sub-IOL1), when the thickness (t2) of the second sub-inorganic layer (Sub-IOL2) exceeds 0.2 μm, the amount of light absorbed by the second sub-inorganic layer (Sub-IOL2) increases, which may lower the efficiency of the display device.

In one embodiment, the ratio (t1:t2) of the thickness (t1) of the first sub-inorganic layer (Sub-IOL1) to the thickness (t2) of the second sub-inorganic layer (Sub-IOL2) may be 3:1 to 5:1.

Referring to FIG. 5b, the difference in light efficiency of the display device according to the second inorganic layer (IOL2) can be confirmed. The efficiency of the display device was evaluated by measuring the current-voltage-luminance (IVL) characteristics. The comparative display device (Com-DD2) has the same configuration as the comparative display device (Com-DD1) of FIG. 4b. The display device (DD-2) of one embodiment is the same as the display device of FIG. 5a, includes a blue light-emitting layer, and includes a first inorganic layer (IOL1) having a refractive index of 1.60, an organic layer (OL), and an encapsulating member including a first sub-inorganic layer (Sub-IOL1) having a refractive index of 1.60 and a second sub-inorganic layer (Sub-IOL2) having a refractive index of 1.90. When the efficiency of the comparative display device (Com-DD2) is 100%, the display device (DD-2) according to one embodiment exhibited an efficiency of about 109.1%, which is a 9.1% increase in efficiency compared to the comparative example. This is an improved efficiency compared to the display devices (DD-1, DD-1') according to one embodiment of FIGS. 4b and 4c, and it is judged that the efficiency was further improved because the thickness of the second sub-inorganic layer (Sub-IOL2) having a refractive index of 1.90 was reduced, thereby reducing the amount of light absorbed in the second sub-inorganic layer (Sub-IOL2). Therefore, the display device (DD-2) according to the present invention can have improved efficiency by including the first sub-inorganic layer (Sub-IOL1) and the second sub-inorganic layer (Sub-IOL2) having controlled refractive index and thickness.

In one embodiment, the second sub-inorganic layer (Sub-IOL2) may include an inorganic material having a relatively high absorption coefficient, for example, one of silicon nitride, aluminum oxide, and titanium oxide.

FIGS. 6A to 6C are cross-sectional views of a display device according to one embodiment of the present invention. Hereinafter, a detailed description of the same configuration as the display device described with reference to FIGS. 1 to 5B is omitted.

Referring to FIG. 6a, the display device (DD-3) may include a cover layer (COL) disposed between the light emitting element (ED) and the encapsulating member (EN-1). The cover layer (COL) may be disposed directly on the light emitting element (ED), and the encapsulating member (EN-1) may be disposed directly on the cover layer (COL).

Referring to FIG. 6b, the display device (DD-4) may include a capping layer (CAL) disposed between the light-emitting element (ED) and the encapsulating member (EN-1). The capping layer (CAL) may be disposed directly on the light-emitting element (ED), and the encapsulating member (EN-1) may be disposed directly on the capping layer (CAL).

Referring to FIG. 6c, the display device (DD-5) may include an encapsulating member (EN-1) directly disposed on the light emitting element (ED). In this case, the display device (DD-5) may not include a cover layer and a capping layer.

FIGS. 7A and 7B are cross-sectional views of a display device including a color conversion layer (CCL) according to an embodiment of the present invention. FIG. 7B illustrates three pixel areas (PX-R, PX-G, PX-B) according to an embodiment corresponding to FIG. 7A. Hereinafter, a detailed description of the same configuration as the display device described with reference to FIGS. 1 to 6C will be omitted.

Referring to FIG. 7a, the display device (DD-6) may include a color conversion layer (CCL) disposed on an encapsulating member (EN). Although not shown, a capping layer (CAL) and/or a cover layer (COL) may be included between the light emitting element (ED) and the encapsulating member (EN).

Referring to FIG. 7b, the light-emitting layer (EML) is commonly overlapped and arranged in the first to third pixel areas (PX-R, PX-G, PX-B) and may have an integral shape. The light-emitting layer (EML) may provide the same blue light.

In Fig. 7b, the light emitting element (ED) is illustrated as including one intermediate layer (CL), but is not limited thereto, and may include a multilayered intermediate layer (CL) referred to as a tandem. For example, it may include a first intermediate layer, a second intermediate layer, and a third intermediate layer, and in this case, the light emitting layer may have a structure such as blue light emitting layer/blue light emitting layer/blue light emitting layer.

The color conversion layer (CCL) may include a transmission filter (TF) and a color conversion member (CCF) corresponding to the first pixel area (PX-B), the second pixel area (PX-G), and the third pixel area (PX-R). In the present embodiment, a color conversion layer (CCL) including one transmission filter (TF) and two color conversion members (CCF1, CCF2) corresponding to three pixel areas is exemplarily illustrated.

A transmission filter (TF) may be arranged corresponding to the first pixel area (PX-B). The transmission filter (TF) does not include a light-emitting body and may transmit light provided from the light-emitting layer (EML). The transmission filter (TF) may include a transparent polymer resin, and may further include at least one of a blue pigment and a dye to improve color purity.

The first color conversion member (CCF1) and the second color conversion member (CCF2) are arranged corresponding to the second pixel area (PX-G) and the third pixel area (PX-R), and can absorb light provided from the light-emitting layer (EML) and emit light of a different color. The first color conversion member (CCF1) and the second color conversion member (CCF2) can include a light-emitting body, and the light-emitting body can include a quantum dot.

A shielding member (BM) may be arranged between the transmission filter (TF) and the first color conversion member (CCF1), and between the first color conversion member (CCF1) and the second color conversion member (CCF2), which are arranged to be spaced apart from each other. The shielding member (BM) may be formed by including an organic shielding material or an inorganic shielding material including a black pigment or dye. The shielding member (BM) may overlap a peripheral area (NPX). The shielding member (BM) may prevent light leakage and may distinguish a boundary between adjacent transmission filters (TF) and color conversion members (CCF1, CCF2). However, the shielding member (BM) may be omitted, and the color conversion member (CCF) may be arranged directly.

Although the present invention has been described above with reference to preferred embodiments thereof, it will be understood by those skilled in the art or having ordinary knowledge in the art that various modifications and changes may be made to the present invention without departing from the spirit and technical scope of the present invention as set forth in the claims below.

Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the scope of the patent claims.

DD: Display device BS: Base absence
DL: Display layer ED: Light-emitting element
EN : Bag-free IOL : Mineral layer
OL: Organic layer

Claims (28)

light emitting element; and
A sealing member is disposed on the light-emitting element and includes a sealing member that seals the light-emitting element.
The above bag absence
A first inorganic layer disposed on the light-emitting element and having a refractive index of 1.58 or more and 1.64 or less;
an organic layer disposed on the first inorganic layer; and
A first sub-inorganic layer and a second sub-inorganic layer spaced apart from the organic layer with the first sub-inorganic layer interposed therebetween, and a second inorganic layer disposed on the organic layer;
The refractive index of the first sub-weapon layer is 1.58 or more and 1.64 or less, and the thickness of the first sub-weapon layer is 0.5 μm or more and 0.6 μm or less,
A display device wherein the refractive index of the second sub-inorganic layer is 1.80 or more and 2.00 or less, and the thickness of the second sub-inorganic layer is 0.1 μm or more and 0.2 μm or less. In the first paragraph,
A display device wherein the thickness of the first weapon layer is 0.5 μm or more and 1.5 μm or less. In the first paragraph,
A display device wherein the first inorganic layer comprises at least one of silicon nitride, silicon nitride, and silicon oxide. delete delete delete In the first paragraph,
A display device wherein a thickness ratio of the first sub-weapon layer to the second sub-weapon layer is 3:1 to 5:1. delete delete In the first paragraph,
A display device wherein the first sub-inorganic layer comprises silicon nitride or silicon oxide. In the first paragraph,
A display device wherein the second sub-inorganic layer comprises one of silicon nitride, aluminum oxide, and titanium oxide. In the first paragraph,
The second sub-weapon layer is a display device arranged on the uppermost part of the bag member. In the first paragraph,
A display device wherein the second inorganic layer comprises silicon nitride that does not contain Si-O bonds. In Article 13,
A display device wherein the hydrogen content of the second inorganic layer is 2.8 X 10 ²² atoms/cm ³ or less. In Article 13,
A display device wherein the molar ratio of nitrogen to silicon in the entire second inorganic layer is 1 or more and 1.3 or less. In Article 13,
A display device wherein the density of the second inorganic layer is 2.3 g/cm ³ or more and 2.6 g/cm ³ or less. In the first paragraph,
The above light emitting element comprises a first electrode;
a second electrode disposed on the first electrode; and
A display device comprising an intermediate layer disposed between the first electrode and the second electrode, the intermediate layer including a light-emitting layer including at least one of an organic light-emitting material and a quantum dot light-emitting material. In the first paragraph,
A display device further comprising a capping layer disposed between the light-emitting element and the sealing member. In Article 18,
A display device further comprising a cover layer disposed between the capping layer and the sealing member and having a refractive index of 1.3 or more and 1.4 or less. In the first paragraph,
A display device further comprising a color conversion layer including quantum dots, the color conversion layer being disposed on the above-mentioned bag member. light emitting element;
A first inorganic layer disposed on the light-emitting element and having a first thickness;
an organic layer disposed on the first inorganic layer; and
A second inorganic layer disposed on the organic layer;
The second inorganic layer includes a first sub-inorganic layer having a second thickness smaller than the first thickness and a second sub-inorganic layer disposed on the first sub-inorganic layer and having a third thickness smaller than the second thickness,
The second sub-inorganic layer is spaced apart from the organic layer with the first sub-inorganic layer therebetween,
The refractive index of the first sub-weapon layer is 1.58 or more and 1.64 or less, and the second thickness of the first sub-weapon layer is 0.5 μm or more and 0.6 μm or less,
A display device wherein the refractive index of the second sub-inorganic layer is 1.80 or more and 2.00 or less, and the third thickness of the second sub-inorganic layer is 0.1 μm or more and 0.2 μm or less. In Article 21,
A display device wherein the ratio of the second thickness and the third thickness is 3:1 to 5:1. In Article 21,
A display device in which the refractive index of the first inorganic layer is smaller than the refractive index of the second sub-inorganic layer. In Article 23,
A display device wherein the refractive index of the first weapon layer is 1.58 or more and 1.64 or less. delete light emitting element; and
A sealing member is disposed on the light-emitting element and includes a sealing member that seals the light-emitting element.
The above bag absence
1st weapon layer;
an organic layer disposed on the first inorganic layer; and
A second inorganic layer comprising a first sub-inorganic layer and a second sub-inorganic layer spaced apart from the organic layer with the first sub-inorganic layer interposed therebetween, and a second inorganic layer disposed on the organic layer;
The above second weapon layer
Contains silicon nitride that does not contain Si-O bonds,
The above second inorganic layer has a molar ratio of nitrogen to silicon of 1 or more and 1.3 or less based on the entire layer,
Having a hydrogen content of less than 2.8 X 10 ²² atoms/cm ³ ,
The refractive index of the first sub-weapon layer is 1.58 or more and 1.64 or less, and the thickness of the first sub-weapon layer is 0.5 μm or more and 0.6 μm or less,
A display device wherein the refractive index of the second sub-inorganic layer is 1.80 or more and 2.00 or less, and the thickness of the second sub-inorganic layer is 0.1 μm or more and 0.2 μm or less. In Article 26,
A display device wherein the density of the second inorganic layer is 2.3 g/cm ³ or more and 2.6 g/cm ³ or less. In Article 26,
A display device wherein the refractive index of the first weapon layer is 1.58 or more and 1.64 or less.

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