KR102729423B1 - Array substrate, display panel having the same and method of manufacturing the same - Google Patents

Abstract

The laser device includes a laser generator that generates a first laser beam, and a reverse module that converts the first laser beam to emit a second laser beam. The reverse module includes a first prism including a first incident surface, a first exit surface, and a first reflective surface, and a second prism including a second incident surface parallel to the first exit surface, a second exit surface parallel to the first incident surface, and a second reflective surface.

Description

Laser device {ARRAY SUBSTRATE, DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME}

The present invention relates to a laser device, and more particularly, to a laser device used in excimer laser annealing (ELA).

In general, the methods for crystallizing an amorphous silicon layer into a polycrystalline silicon layer include solid phase crystallization (SPC), metal induced crystallization (MIC), metal induced lateral crystallization (MILC), and excimer laser annealing (ELA). In particular, in the manufacturing process of organic light emitting diode displays (OLEDs) or liquid crystal displays (LCDs), the excimer laser annealing (ELA) is used to crystallize amorphous silicon into polycrystalline silicon using a laser beam.

The laser device used in this excimer laser annealing (ELA) method includes a laser generator that generates a source laser beam. The source laser beam is an unprocessed initial laser beam, and is a laser beam whose cross section has a rectangular shape with a long axis and a short axis. The source laser beam has an energy distribution of Gaussian distribution in both the long axis direction and the short axis direction. The Gaussian distribution means a normal distribution that is symmetrical on both sides about the mean.

However, when shaking occurs between multiple shots of the laser device, the energy distribution of the source laser beam may deviate from the normal distribution and become asymmetrical from left to right. In this case, crystallization defects may occur in the polycrystalline silicon layer. Accordingly, complex optical systems have been developed to remove the asymmetry of the source laser beam, but there have been problems such as requiring a large number of optical lenses, resulting in low optical efficiency, spatial constraints, and difficulty in beam alignment.

Accordingly, the technical problem of the present invention was conceived from this point, and the purpose of the present invention is to provide a laser device having a simple structure and improved optical efficiency.

According to one embodiment of the present invention for realizing the above-described object, a laser device includes a laser generator for generating a first laser beam, and a reverse module for converting the first laser beam to emit a second laser beam. The reverse module includes a first prism including a first incident surface, a first exit surface, and a first reflecting surface, and a second prism including a second incident surface parallel to the first exit surface, a second exit surface parallel to the first incident surface, and a second reflecting surface.

In one embodiment of the present invention, the first laser beam can be processed into the second laser beam by passing through the first prism and the second prism sequentially.

In one embodiment of the present invention, the first laser beam and the second laser beam can be positioned on the same straight line.

In one embodiment of the present invention, the first laser beam can be incident on the first incident surface of the first prism. The first exit surface can reflect a portion of the laser beam incident through the first incident surface to form a reflected laser beam, and transmit a portion of the laser beam to form a transmitted laser beam. The first reflective surface can reflect the reflected laser beam. The transmitted laser beam and the reflected laser beam reflected from the first reflective surface can be incident on the second incident surface of the second prism. The second exit surface can transmit the transmitted laser beam and reflect the reflected laser beam. The second reflective surface can reflect the reflected laser beam reflected from the second exit surface. The reflected laser beam reflected from the second reflective surface can be reflected from the second incident surface again and then transmitted through the second exit surface.

In one embodiment of the present invention, the first exit surface of the first prism may be arranged to form a first angle with the first incident surface. The first reflection surface may be arranged to form a second angle with the first incident surface. The first angle may be an acute angle less than 90 degrees, and the second angle may be an obtuse angle greater than 90 degrees and less than 180 degrees.

In one embodiment of the present invention, the second reflective surface may include a first inclined surface and a second inclined surface. The first inclined surface and the second inclined surface may meet to form a corner. The corner may be arranged to form a third angle with the second incident surface. The first inclined surface and the second inclined surface may be arranged to form a fourth angle with each other.

In one embodiment of the present invention, the third angle may be an acute angle less than 90 degrees, and the fourth angle may be less than 180 degrees.

In one embodiment of the present invention, the first prism and the second prism can be spaced apart from each other.

In one embodiment of the present invention, the laser device may further include a moving part for adjusting a distance between the first prism and the second prism.

According to one embodiment of the present invention for realizing the above-described object, a laser device includes a laser generator which generates a first laser beam, and a reverse module which converts the first laser beam to emit a second laser beam. The reverse module includes a splitter which reflects a portion of the first laser beam to form a reflected laser beam and transmits a portion of the first laser beam to form a transmitted laser beam, a mirror which reflects the transmitted laser beam transmitted through the splitter, and a prism which reflects the transmitted laser beam reflected by the mirror toward the splitter.

In one embodiment of the present invention, the prism includes an incident surface and a reflective surface, and the reflective surface may include a first inclined surface and a second inclined surface forming a predetermined angle less than 180 degrees with respect to each other.

In one embodiment of the present invention, the first laser beam and the second laser beam can be perpendicular to each other.

According to embodiments of the present invention, the laser device includes a laser generator that generates a first laser beam, and a reversing module that converts the first laser beam to emit a second laser beam. The reversing module includes a first prism including a first incident surface, a first exit surface, and a first reflecting surface, and a second prism including a second incident surface parallel to the first exit surface, a second exit surface parallel to the first incident surface, and a second reflecting surface. Therefore, the reversing module of the laser device can form an origin reversing module through a simple structure by using the first and second prisms. Therefore, the optical efficiency can be improved.

In addition, by adjusting the distance between the first exit surface of the first prism and the second incident surface of the second prism, the ratio of the reflected laser beam and the transmitted laser beam described later can be adjusted.

In addition, the first laser beam and the second laser beam are positioned on the same straight line, thereby facilitating alignment of the laser beams of the laser device.

However, the effects of the present invention are not limited to the above effects, and may be expanded in various ways without departing from the spirit and scope of the present invention.

FIG. 1 is a schematic diagram of a laser device according to one embodiment of the present invention.
Figure 2 is a schematic illustration of the inversion module of the laser device of Figure 1.
FIG. 3 is a perspective view showing the first prism and the second prism of the inversion module of the laser device of FIG. 2.
Fig. 4 is a detailed explanation diagram of the inversion module of the laser device of Fig. 2.
Figure 5 is a schematic diagram of a laser device according to one embodiment of the present invention.
Figure 6 is a schematic illustration of the inversion module of the laser device of Figure 5.
Fig. 7 is a perspective view showing a prism of the inversion module of the laser device of Fig. 5.
Fig. 8 is a detailed explanation diagram of the inversion module of the laser device of Fig. 5.
FIG. 9 is a cross-sectional view schematically illustrating the structure of a thin film transistor manufactured using a laser device according to embodiments of the present invention and a display element including the same.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the drawings.

FIG. 1 is a schematic diagram of a laser device according to one embodiment of the present invention.

Referring to FIG. 1, the laser device includes a laser generator (100), a reversing module (200), and a laser optical system (300). The laser generator (100) generates laser light and irradiates the laser light to the outside of the laser generator (100). A first laser beam (L1) emitted from the laser generator (100) in a first direction (D1) passes through the reversing module (200) and is processed into a second laser beam (L2) that travels along the first direction (D1). The second laser beam (L2) is changed into a third laser beam (L3) that is an emission light that travels in a third direction (D3) perpendicular to the first direction (D1) through the laser optical system (300), and the third laser beam (L3) is irradiated toward an object (400) placed on a stage (500) that is spaced apart from the laser optical system (300) in the third direction (D3).

The stage (500) above includes a flat upper surface, and the target object (400) can be positioned on the upper surface of the stage (500). The upper surface can be parallel to a plane formed by the first direction (D1) and a second direction (see D2 of FIG. 3) perpendicular to the first direction (D1). At this time, the target object (400) is positioned to face the laser optical system (300), and when laser annealing a thin film transistor substrate, the target object (400) can be an amorphous silicon layer formed on the substrate.

The above laser optical system (300) can move in one direction or in two directions perpendicular to each other, and as the laser optical system (300) moves, the laser light can scan the entire surface of the target object (300). However, the present invention is not limited thereto, and instead of the laser optical system (300), the stage (500) on which the target object (400) is placed can be moved in the opposite direction to the one direction, and both the laser optical system (300) and the stage (500) can be moved.

In this way, the laser device irradiates the object (400) with the third laser beam (L3) to crystallize amorphous silicon included in the object (400) into poly-crystalline silicon, which will be described later with reference to FIG. 9. Hereinafter, the inversion module (200) that converts the first laser beam (L1) emitted from the laser generator (100) into the second laser beam (L2) will be described in more detail.

Fig. 2 is a schematic explanatory drawing of the inversion module of the laser device of Fig. 1. Fig. 3 is a perspective view showing the first prism and the second prism of the inversion module of the laser device of Fig. 2. Fig. 4 is a specific explanatory drawing of the inversion module of the laser device of Fig. 2.

Referring to FIGS. 2 to 4, the inversion module (200) may include a first prism (210), a first prism driving unit (220), a second prism (230), a second prism driving unit (240), and a control unit (250).

The above first prism (210) may include a first incident surface (211), a first exit surface (212), and a first reflective surface (213). The first incident surface (211) may be arranged on a plane perpendicular to the first direction (D1). The first exit surface (212) may be arranged to form a first angle (θ1) with the first incident surface (211). The first reflective surface (213) may be arranged to form a second angle (θ2) with the first incident surface (211).

Here, the first angle (θ1) may be an acute angle less than 90 degrees, and the second angle (θ2) may be an obtuse angle greater than 90 degrees and less than 180 degrees.

The above second prism (230) may include a second incident surface (231), a second exit surface (232), and a second reflective surface (233).

The second incident surface (231) may be arranged parallel to the first exit surface (212) of the first prism (210). At this time, the first exit surface (212) and the second incident surface (231) are arranged spaced apart from each other in the first direction (D1), and the distance between the first exit surface (212) and the second incident surface (231) may be adjusted by the first prism driving unit (220) and the second prism driving unit (240).

The above second exit surface (232) can be arranged parallel to the first incident surface (211) of the first prism (210).

The second reflective surface (233) may include a first inclined surface (233a) and a second inclined surface (233b). The first inclined surface (233a) and the second inclined surface (233b) may be arranged to form a fourth angle (θ4). The fourth angle (θ4) may be an angle smaller than 180. The first inclined surface (233a) and the second inclined surface (233b) may meet to form a corner (234). The corner (234) may be arranged to form a third angle (θ3) with the second incident surface (231). Here, the third angle (θ3) may be an acute angle smaller than 90 degrees.

The first prism driving unit (220) is connected to the first prism (210) and can move the position of the first prism (210) in the first direction (D1). The second prism driving unit (240) is connected to the second prism (230) and can move the position of the second prism (230) in the first direction (D1).

The above control unit (250) can control the first and second prism driving units (220, 240). By driving the first and second prism driving units (220, 240) by the control unit (250), the positions of the first and second prisms (210, 220) can be aligned, and the distance between the first exit surface (212) of the first prism (210) and the second incident surface (231) of the second prism (230) can be adjusted, thereby controlling the ratio of the reflected laser beam and the transmitted laser beam, which will be described later.

Although not illustrated in detail, the first prism driving unit (220) and the second prism driving unit (240) may have various forms. For example, the first prism driving unit (220) and the second prism driving unit (240) may include an actuator. The actuator performs an operation of moving the first prism (210) or the second prism (230) in a predetermined direction according to an input electric signal. The actuator has been described as being automatically controlled by the control unit (250), but may also be controlled by the user by an on/off operation of a switch. Meanwhile, the actuator may be driven in various ways, and a linear actuator driven by a rotary motor may be taken as an example.

Meanwhile, in the present embodiment, the inversion module has been described as including first and second prism driving units (220, 240) capable of moving the positions of the first prism (210) and the second prism (230), respectively, but is not limited thereto. That is, any configuration capable of adjusting the distance between the first prism (210) and the second prism (230) in the first direction (D1) may be used. For example, the driving unit and the control unit may be configured such that one of the first and second prisms (210, 230) is fixed and the other one can move along the first direction (D1).

Referring again to FIG. 2, an optical path is illustrated in which the first laser beam (L1) passes through the first and second prisms (210, 230) in sequence and is converted into the second laser beam (L2).

Referring again to FIG. 3, a shape in which a laser beam passing through the first and second prisms (210, 230) of the inversion module (200) is inverted symmetrically about the origin is schematically illustrated.

Referring again to FIGS. 2 to 4, the first laser beam (L1) incident on the first incident surface (211) of the first prism (210) of the inverting module (220) passes through the interior of the first prism (210) and reaches the first exit surface (212). Some of the beam is reflected at the first exit surface (212) and proceeds to the first reflection surface (213) as a reflected laser beam, and some of the beam passes through the first exit surface (212) and proceeds to the second incident surface (231) of the second prism (230) as a transmitted laser beam.

At this time, the ratio of the transmitted laser beam and the reflected laser beam transmitted and reflected from the first exit surface (212) can be changed depending on the distance between the first exit surface (212) and the second incident surface (231), and Fig. 4 shows a case where the transmitted laser beam and the reflected laser beam are divided into 50%:50%. The ratio can be variably changed as needed.

The reflected laser beam that reaches the first reflection surface (213) is reflected by the first reflection surface (213), passes through the first exit surface (212), and is incident on the second incident surface (231) of the second prism (230). The reflected laser beam that is incident on the second incident surface (231) is reflected by the second exit surface (232) and proceeds to the second reflection surface (233). The reflected laser beam that reaches the second reflection surface (233) is reflected by the second reflection surface (233) and proceeds to the second incident surface (231). The reflected laser beam that reaches the second incident surface (231) again is reflected on the inner side of the second incident surface (231) and is emitted through the second exit surface (232).

At this time, the transmitted laser beam enters the second prism (230) through the second incident surface (231) and proceeds to the second exit surface (232). The transmitted laser beam that reaches the second exit surface (232) passes through the second exit surface (232) and mixes with the reflected laser beam that is emitted through the second exit surface (232) to create the second laser beam (L2).

At this time, the first laser beam (L1) and the second laser beam (L2) are positioned on the same straight line, and thus, alignment of the laser beams of the laser device becomes easy.

Referring again to Fig. 4, for convenience of explanation, it is assumed that green (G) is placed at the upper left, yellow (Y) at the upper right, blue (B) at the lower left, and red (R) at the lower right of the first laser beam (L1) before it enters the first prism (210).

The transmission laser beam emitted from the second prism (230) may have the same color distribution as the first laser beam (L1) before being incident on the first prism (210). That is, the transmission laser beam has green (G) arranged at the upper left, yellow (Y) arranged at the upper right, blue (B) arranged at the lower left, and red (R) arranged at the lower right.

On the other hand, the reflected laser beam emitted from the second prism (230) can be reversed left and right and up and down. That is, the reflected laser beam can be reversed left and right and up and down while being reflected from the second reflection surface (233) and the second incident surface (231). That is, the reflected laser beam is arranged with red (R) at the upper left, blue (B) at the upper right, yellow (Y) at the lower left, and green (G) at the lower right.

Accordingly, since the transmitted laser beam and the reflected laser beam, which is the transmitted laser beam and is inverted with origin symmetry, are mixed, even if the energy distribution of the first laser beam (L1) is not uniform, the energy distribution of the second laser beam (L2) can be uniformized to have a symmetrical normal distribution.

That is, the reflected laser beam is reversed in the major axis direction (X) and simultaneously in the minor axis direction (Y) compared to the transmitted laser beam. For example, when the incident laser beam has a high energy density at the upper right, the transmitted laser beam has a high energy density at the upper right, similar to the incident laser beam, and the reflected laser beam has a relatively high energy density at the lower left. Therefore, the output laser beam, which is a mixture of the transmitted laser beam and the reflected laser beam, has a normal distribution in which the energy distribution is symmetrical because the energy density at the center is high.

According to the present embodiment, the inversion module of the laser device can form an origin inversion module through a simple structure using first and second prisms, and the ratio of a non-inverted transmission laser beam and a inverted reflection laser beam can be easily controlled by adjusting the distance between the first and second prisms.

FIG. 5 is a schematic diagram of a laser device according to one embodiment of the present invention. FIG. 6 is a schematic explanatory diagram of the inversion module of the laser device of FIG. 5. FIG. 7 is a perspective view showing a prism of the inversion module of the laser device of FIG. 5. FIG. 8 is a specific explanatory diagram of the inversion module of the laser device of FIG. 5.

Referring to FIGS. 5 to 8, the laser device includes a laser generator (100), a reversing module (600), and a laser optical system (300). The laser generator (100) generates laser light and irradiates the laser light to the outside of the laser generator (100). A first laser beam (L1) emitted from the laser generator (100) in a first direction (D1) passes through the reversing module (200) and is processed into a second laser beam (L2) that travels along a third direction (D3). The third direction (D3) may be perpendicular to the first direction (D1). The second laser beam (L2) is changed into a third laser beam (L3), which is an emission light that passes through the laser optical system (300) in the third direction (D3), and the third laser beam (L3) is irradiated toward an object (400) placed on a stage (500) spaced apart from the laser optical system (300) in the third direction (D3).

The laser generator (100), the stage (500), and the target object (400) may be substantially the same as the configurations of the laser device of Fig. 1. In addition, except that the second laser beam (L2) incident on the laser optical system (300) is incident in the first direction (D1), the laser optical system (300) may be substantially the same as the laser optical system of the laser device of Fig. 1. Therefore, a repeated description is omitted.

The above inversion module (600) may include a splitter (610), a mirror (620), and a prism (630).

The splitter (610) reflects a portion of the incident first laser beam (L1) to create a reflected laser beam, and transmits a portion of the incident first laser beam to create a transmitted laser beam. For example, the splitter (610) can reflect 50% of the incident first laser beam (L1) to create a reflected laser beam, and transmit the remaining 50% of the incident laser beam (L1) to create a transmitted laser beam.

The above mirror (620) can reflect the transmitted laser beam that has passed through the splitter (610) and cause the transmitted laser beam to proceed to the prism (630).

The prism (630) may include an incident surface (631) and a reflective surface (632). The reflective surface (632) may include a first inclined surface (632a) and a second inclined surface (632b). The first inclined surface (632a) and the second inclined surface (632b) may be arranged to form a fifth angle (θ5) on a cross-section formed along the first and third directions (D1, D3). The first inclined surface (632a) and the second inclined surface (632b) may meet to form a corner (633). Here, the fifth angle (θ5) may be less than 180 degrees.

The transmitted laser beam reflected from the mirror (630) is incident through the incident surface (631) of the prism (630), reflected from the reflective surface (632), and then emitted again through the incident surface (631). The transmitted laser beam emitted through the incident surface (631) passes through the splitter (610) and is mixed with the reflected laser beam to create the second laser beam (L2).

At this time, the first laser beam (L1) and the second laser beam (L2) may be perpendicular to each other.

Referring back to Figure 8, for convenience of explanation, it is assumed that green (G) is placed at the upper left, yellow (Y) at the upper right, blue (B) at the lower left, and red (R) at the lower right of the first laser beam (L1) before it enters the splitter (610).

The reflected laser beam emitted from the splitter (610) can be inverted upside down with respect to the first laser beam (L1) before being incident on the splitter (610). That is, the reflected laser beam is arranged with blue (B) at the upper left, red (R) at the upper right, green (G) at the lower left, and yellow (Y) at the lower right.

On the other hand, the transmission laser beam that passes through the splitter (610) and is emitted through the mirror (620) and the prism (630) can be reversed left and right. That is, the transmission laser beam is arranged with yellow (Y) at the upper left, green (G) at the upper right, red (R) at the lower left, and blue (B) at the lower right.

Accordingly, since the upside-down inverted reflected laser beam and the left-right inverted transmitted laser beam are mixed, even if the energy distribution of the first laser beam (L1) is not uniform, the energy distribution of the second laser beam (L2) can be uniformized to have a symmetrical normal distribution.

According to embodiments of the present invention, the laser device includes a laser generator that generates a first laser beam, and a reversing module that converts the first laser beam to emit a second laser beam. The reversing module includes a first prism including a first incident surface, a first exit surface, and a first reflecting surface, and a second prism including a second incident surface parallel to the first exit surface, a second exit surface parallel to the first incident surface, and a second reflecting surface. Therefore, the reversing module of the laser device can form an origin reversing module through a simple structure by using the first and second prisms. Therefore, the optical efficiency can be improved.

In addition, by adjusting the distance between the first exit surface of the first prism and the second incident surface of the second prism, the ratio of the reflected laser beam and the transmitted laser beam described later can be adjusted.

In addition, the first laser beam and the second laser beam are positioned on the same straight line, thereby facilitating alignment of the laser beams of the laser device.

According to another embodiment, the laser device includes a laser generator which generates a first laser beam, and a reversing module which converts the first laser beam to emit a second laser beam. The reversing module includes a splitter which reflects a portion of the first laser beam to form a reflected laser beam and transmits a portion of the first laser beam to form a transmitted laser beam, a mirror which reflects the transmitted laser beam transmitted through the splitter, and a prism which reflects the transmitted laser beam reflected by the mirror toward the splitter. Therefore, the reversing module of the laser device can be configured as a reversing module through a simple structure using one splitter, one mirror, and one prism. Therefore, the optical efficiency can be improved.

FIG. 9 is a cross-sectional view schematically illustrating the structure of a thin film transistor manufactured using a laser device according to embodiments of the present invention and a display element including the same.

Referring to FIG. 9, a buffer layer (31) may be formed on a substrate (20) to prevent diffusion of impurity ions and penetration of moisture or external air, and to provide a flat surface. At this time, the substrate (20) may be an insulating substrate made of glass, plastic, or the like. The buffer layer (31) may contain an inorganic insulating material such as silicon oxide, silicon nitride, or the like, and/or an organic insulating material such as polyimide, polyester, or acrylic. The buffer layer (31) is not an essential component, and may therefore be omitted depending on process conditions.

On the buffer layer (31) above, a semiconductor layer (40) made of polycrystalline silicon is formed, which includes a channel region (43) and source and drain regions (41, 42) formed on both sides centered on the channel region (43). Here, the source and drain regions (41, 42) are doped with n-type or p-type impurities and may include a silicide layer. Hereinafter, a method of forming the semiconductor layer (40) will be described in more detail.

On the above substrate (20), amorphous silicon is deposited using a low-pressure chemical vapor deposition, plasma chemical vapor deposition, sputtering, or the like to form an amorphous silicon thin film. The silicon can be classified into amorphous silicon and polycrystalline silicon depending on the crystal state. The amorphous silicon has the advantage of being able to be deposited as a thin film at a relatively low temperature, but has the disadvantage of having relatively poor electrical characteristics and being difficult to produce on a large area due to the lack of regulation in the atomic arrangement. However, the polycrystalline silicon has a superior current flow rate compared to amorphous silicon, and in particular, the electrical characteristics improve as the grain size increases. At this time, when an insulating substrate (20) such as glass having a low melting point is utilized, an amorphous silicon thin film is deposited on the substrate (20) and then changed into a polycrystalline silicon thin film for use. In order to improve the crystallinity of the deposited silicon thin film, a heat treatment process by laser annealing is typically performed.

In the above laser annealing process, a laser device is used to initially preheat a transmission lens, and then laser light is irradiated onto the amorphous silicon thin film only when the transmission lens reaches a certain temperature and is maintained at a certain temperature, thereby crystallizing the amorphous silicon thin film into a polycrystalline silicon thin film. As a result, crystal grains of the polycrystalline silicon thin film can be formed uniformly, and the characteristics of the thin film transistor (TFT) completed thereafter can also be uniformly maintained.

Meanwhile, a gate insulating film (32) made of silicon oxide (SiO2) or silicon nitride (SiNx), etc., is formed on the upper portion of the substrate (20) to cover the semiconductor layer (40), and a gate electrode (50) is formed on the upper portion of the gate insulating film (32) to correspond to the channel region (43). An interlayer insulating film (33) is formed on the upper portion of the gate insulating film (32) to cover the gate electrode (50), and the gate insulating film (32) and the interlayer insulating film (33) have contact holes (C1, C2) that expose the source and drain regions (41, 42) of the semiconductor layer (40). On the upper part of the interlayer insulating film (33), a source electrode (61) connected to the source region (41) through the contact hole (C1) and a drain electrode (62) facing the source electrode (61) centered on the gate electrode (50) and connected to the drain region (42) through the contact hole (C2) are formed. The interlayer insulating film (33) is covered with a protective film (34), and the protective film (34) may be made of an inorganic insulating material including an oxide, a nitride, and/or an oxynitride, or may be made of an organic insulating material. A contact hole (C3) exposing the source electrode (61) is formed in the protective film (34), and a pixel electrode (70) is formed on the upper part of the protective film (34) and is connected to the source electrode (61) through the contact hole (C3). Here, the pixel electrode (70) may be formed to be connected to the drain electrode (62) instead of the source electrode (61). The pixel electrode (70) may be a transparent electrode or a reflective electrode, and when the pixel electrode (70) is used as a transparent electrode, it may include ITO, IZO, ZnO or In2O3. In addition, when the pixel electrode (70) is used as a reflective electrode, it may be formed as a multilayer structure including a first layer made of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr and compounds thereof, and a second layer formed on the first layer and including ITO, IZO, ZnO or In2O3.

Although not shown, a common electrode (not shown), which may be a transparent electrode or a reflective electrode, and an intermediate layer (not shown) including an organic light-emitting layer are formed on the pixel electrode (70). In addition, a pixel definition film (not shown) that defines a pixel by exposing a part of the common electrode may be placed on the protective film (34).

Meanwhile, the structure of the thin film transistor (TFT) and the display element (P) including the same illustrated in FIG. 9 is merely an example and may be modified in various ways depending on the design.

Using the laser device of the present invention, organic light emitting display devices and various electronic devices including the same can be manufactured. For example, the present invention can be applied to manufacturing mobile phones, smart phones, video phones, smart pads, smart watches, tablet PCs, vehicle navigation devices, televisions, computer monitors, notebooks, head-mounted displays, etc.

Although the present invention has been described above with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various modifications and changes may be made to the present invention without departing from the spirit and scope of the present invention as set forth in the claims below.

100: Laser generator 200, 600: Inverter module
210: 1st prism 220: 1st prism drive unit
230: Second prism 240: Second prism drive unit
250: Control unit 300: Laser optics
400: Subject 500: Stage

Claims (3)

a laser generator for generating a first laser beam; and
It includes an inversion module that converts the first laser beam and emits a second laser beam,
The above inversion module
A splitter that reflects a portion of the first laser beam to form a reflected laser beam and transmits a portion of the first laser beam to form a transmitted laser beam;
a mirror that reflects the transmitted laser beam that has passed through the splitter; and
A laser device including a prism that reflects the transmitted laser beam reflected from the mirror toward the splitter. In the first paragraph,
A laser device, characterized in that the prism includes an incident surface and a reflective surface, and the reflective surface includes a first inclined surface and a second inclined surface forming a predetermined angle less than 180 degrees with respect to each other. In the second paragraph,
A laser device, characterized in that the first laser beam and the second laser beam are perpendicular to each other.