KR102713646B1 - Apparatus for Treating Substrate - Google Patents

Abstract

The present invention relates to a substrate processing device, and more specifically, to a substrate processing device capable of controlling humidity in air supplied during a substrate processing process to prevent excessive humidity or excessive dryness from forming around a substrate and to prevent substrate processing defects from occurring.
The substrate processing device according to the present invention comprises a humidity control unit that controls the humidity of a substrate processing space in which a substrate processing process is performed.

Description

{Apparatus for Treating Substrate}

The present invention relates to a substrate processing device, and more specifically, to a substrate processing device capable of preventing occurrence of process defects in a substrate by controlling humidity in air supplied to a substrate processing space.

Recently, with the rapid development of the information and communication field and the popularization of information media such as computers, semiconductor devices are also developing rapidly. In addition, in terms of functionality, various methods are being researched and developed to reduce the size of individual devices formed on a substrate while maximizing device performance in accordance with the trend of high integration of semiconductor devices.

Typically, semiconductor devices are manufactured by repeatedly performing multiple substrate processes, including lithography, deposition and etching, coating of photoresist, developing, cleaning, and drying.

Each process is carried out using process fluids suitable for each purpose, and each process requires a suitable process environment.

Each process is usually performed by housing the substrate in a chamber or bath where a corresponding process environment is created, and can be performed by housing the substrate inside a sealed chamber to prevent the inflow of external particles.

On the substrate where each process is performed, particles such as metal impurities and organic substances remain, and such contaminants cause substrate process defects and have a negative impact on product yield and reliability.

Therefore, cleaning and drying processes are repeatedly performed upon completion of each process to remove particles remaining on the substrate.

Cleaning can be classified into wet cleaning and dry cleaning, and among them, wet cleaning is widely used in the semiconductor manufacturing field.

Wet cleaning is a method of continuously removing contaminants by using chemicals appropriate for the contaminant at each stage, and large amounts of acid and alkaline solutions are used to remove contaminants remaining on the substrate.

The substrate that has completed the cleaning process in the cleaning equipment is rinsed using a rinsing solution such as deionized water (DI), and then transferred to the drying equipment to perform the drying process.

In the drying process, as the design rules of semiconductor devices have been continuously reduced and microstructure patterns have become dominant, the aspect ratio of the pattern has rapidly increased, and thus, the resolution of the pattern leaning phenomenon has become important.

The pattern collapse phenomenon is a process defect phenomenon in which, during the drying process of the chemical solution supplied on the substrate, irregularly remains between the patterns, and a Laplace pressure is generated due to the surface tension of the remaining chemical solution, resulting in the formation of bridges between the patterns, and then the pattern collapses without being restored due to the adhesive force between the patterns.

As a solution to this pattern collapse phenomenon, a drying method that uses a supercritical fluid as a drying agent that can be supplied to a substrate that has gone through a cleaning and rinsing process and quickly dry the substrate before the pattern collapse phenomenon occurs is gaining attention. In particular, supercritical carbon dioxide, which is a non-toxic, non-flammable, inexpensive, and environmentally friendly substance, is being widely used.

In addition, by supplying supercritical carbon dioxide after a pretreatment process of applying isopropyl alcohol (IPA) as a pretreatment agent on a substrate rinsed with pure water, the pattern collapse phenomenon is resolved by allowing the substrate to dry at a faster rate through the reaction between the supercritical carbon dioxide and isopropyl alcohol.

Referring to FIGS. 1 and 2, an embodiment of a substrate processing device according to a conventional technique in which the above-described cleaning and drying processes are performed is described.

A substrate processing device (1) according to a conventional technology comprises a cleaning chamber (10) in which cleaning, rinsing and pretreatment processes of a substrate (W) are performed, a drying chamber (30) in which a drying process of the substrate (W) is performed, and a substrate transfer unit (20) for supporting and transferring the substrate (W).

In addition, a clean room (S) is provided to isolate the cleaning chamber (10), the drying chamber (30), and the substrate transfer unit (20) from the outside, and an air supply unit (40) that supplies air to the clean room (S).

When the cleaning, rinsing and pretreatment processes are completed in the above cleaning chamber (S), a thin film (5, see FIG. 2) made of a pretreatment agent is formed on the substrate (W), and the substrate transfer unit (20) supports the substrate (W) and takes it out from the cleaning chamber (10) and then transfers it to the drying chamber (30).

At this time, the air supply unit (40) supplies air into the clean room (S) to form a descending air current (A), thereby preventing particles from being attached to the substrate (W) being transported.

The above drying chamber (30) is formed by combining a first housing (31) and a second housing (32) to form a substrate processing space (S-1) that accommodates the substrate (W) inside, and is opened and closed by the driving of a driving unit (34) that supports and moves the second housing (32) up and down.

As shown in Fig. 2 (a), the drying chamber (30) is opened as the second housing (32) is lowered by the driving unit (34), and an opening (33) is formed between the first housing (31) and the second housing (32) so that the inside and outside of the drying chamber (30) are connected.

The above chamber (30) is opened when the substrate (W) is brought into the chamber (30) or taken out from the inside of the chamber (30).

In addition, as shown in Fig. 2 (b), the drying chamber (30) is sealed as the second housing (32) is raised by the driving unit (34) and combined with the first housing (31), and a desiccant is supplied to the substrate processing space inside the sealed drying chamber (30) to perform the drying process of the substrate (W).

In a substrate processing device using the above-described conventional technology, if the humidity of the air supplied inside the clean room (S) is lower or higher than necessary, and an overly dry or overly humid atmosphere is formed inside the clean room (S), the processing process of the substrate (W) may be affected.

For example, water molecules in the air could attach to the substrate (W) being transported, which could cause a process defect in the substrate (W).

In addition, the amount of the thin film (5) on the substrate (W) being transferred to the drying chamber (30) may be reduced as it is dried and evaporated by the descending airflow (A) or the drying atmosphere formed in the clean room (S).

In addition, as the drying chamber (30) was opened, the thin film (5) on the substrate (W) could be dried while the substrate (W) was introduced into the substrate processing space (S-1) inside the drying chamber (30).

The drying of the above thin film (5) means that the amount of the pretreatment agent is reduced, and therefore, a sufficient amount of the pretreatment agent to react with the drying agent in the drying process is not secured, which reduces the efficiency of the drying process and causes process defects of the substrate (W), such as pattern collapse.

As examples of prior art for substrate processing devices as mentioned above, there are Korean Patent No. 10-1605713 and Korean Patent No. 10-0822373.

The present invention has been made to solve the above problems, and aims to provide a substrate processing device capable of preventing the occurrence of substrate processing defects by controlling the humidity of air supplied to a substrate processing space.

The substrate processing device of the present invention for implementing the above-described purpose comprises a humidity control unit for controlling the humidity of a substrate processing space in which a substrate processing process is performed.

The above substrate processing space may be a clean room sealed off from the outside.

The above humidity control unit may be provided as an air control unit in pairs with at least one air supply unit that supplies air to the substrate processing space, and a plurality of the air control units may be provided at a plurality of locations in the substrate processing space so as to be independently operated.

The above humidity control unit may include at least one of a humidity reducing unit that lowers humidity in the air and a humidifying unit that increases humidity in the air.

The above-mentioned humidity reducing unit may be composed of a heater that heats the air, or a dehumidifying means that removes moisture and a cooler that cools the air.

The above dehumidifying means may be composed of an adsorbent that absorbs moisture, particularly a dehumidifying rotor, or a moisture collecting part in the shape of a beaker with an open top.

The above humidifying unit may be formed of a cooler that cools the air or a humidifier that sprays water vapor.

Additionally, the humidity control unit may include a steam supply unit that supplies steam to the processing space of the substrate.

The above substrate processing space may be an internal space of a drying chamber.

The drying chamber may be provided with a steam supply hole that connects the inside and the outside, and the steam supply unit may be connected to the steam supply hole to supply steam to a substrate processing space inside the drying chamber.

Additionally, the steam supply unit may be provided on the outside of the drying chamber and may be configured to supply steam to a substrate processing space inside the drying chamber when the drying chamber is opened.

The above steam supply unit may be configured to supply steam to the upper portion of the substrate processing space inside the drying chamber so that the steam is supplied from the upper portion to the lower portion of the substrate processing space inside the drying chamber.

According to the present invention, by controlling the humidity in the air supplied during a substrate treatment process, it is possible to prevent excessive moisture or excessive dryness from forming around the substrate, and prevent the occurrence of substrate process defects.

In addition, the humidity is controlled according to the location of the air supply unit where air is supplied, thereby increasing the efficiency of the substrate processing process and preventing the occurrence of substrate process defects.

In addition, multiple air conditioning units are provided at different locations to supply air with humidity controlled independently according to each location, thereby increasing the efficiency of the substrate processing process and preventing the occurrence of substrate process defects.

In addition, steam is supplied to the inner space of the drying chamber to form a steam atmosphere inside the drying chamber, thereby preventing a thin film on a substrate introduced into the drying chamber from drying and preventing process defects such as pattern collapse.

In addition, by controlling the supply speed and supply direction of steam, the residence time of steam can be increased and a stable steam atmosphere inside the chamber can be formed.

In addition, the efficiency of the substrate drying process can be improved by supplying vapor composed of a component highly reactive with the drying agent.

In addition, by supplying vapor of the same composition as the thin film formed on the substrate, it is possible to prevent drying of the thin film and to supplement the thin film dried during transport of the substrate.

In addition, by supplying steam horizontally toward the inner upper space of the drying chamber, the vapor retention time can be increased and a vapor atmosphere can be stably formed inside the drying chamber.

In addition, since steam is supplied from a steam supply unit provided on the outside of the drying chamber to the inner upper space of the chamber through an opening in the chamber, the existing substrate drying chamber can be utilized as is, thereby increasing the convenience of the process and reducing incidental costs.

Figure 1 is a schematic drawing showing a substrate processing device according to conventional technology.
Figure 2 is a drawing schematically showing the configuration of a drying chamber in a substrate processing device according to a conventional technology.
FIG. 3 is a drawing showing a first embodiment of a substrate processing device equipped with an air conditioning unit according to the present invention.
FIG. 4 is a drawing showing a second embodiment of a substrate processing device equipped with an air conditioning unit according to the present invention.
FIG. 5 is a drawing showing one embodiment of a dehumidifying means of a humidity reducing unit in a substrate processing device equipped with an air conditioning unit according to the present invention.
FIG. 6 is a drawing showing another embodiment of a dehumidifying means of a humidity reducing unit in a substrate processing device equipped with an air conditioning unit according to the present invention.
FIG. 7 is a drawing showing a first embodiment of a substrate processing device equipped with a steam supply unit according to the present invention.
FIG. 8 is a drawing showing a second embodiment of a substrate processing device equipped with a steam supply unit according to the present invention.
FIG. 9 is a drawing showing a third embodiment of a substrate processing device equipped with a steam supply unit according to the present invention.
FIG. 10 is a drawing showing a fourth embodiment of a substrate processing device equipped with a steam supply unit according to the present invention.
FIG. 11 is a drawing showing a fifth embodiment of a substrate processing device equipped with a steam supply unit according to the present invention.
FIG. 12 is a drawing showing a sixth embodiment of a substrate processing device equipped with a steam supply unit according to the present invention.
FIG. 13 is a drawing showing a seventh embodiment of a substrate processing device equipped with a steam supply unit according to the present invention.
FIG. 14 is a drawing showing an eighth embodiment of a substrate processing device equipped with a steam supply unit according to the present invention.
FIG. 15 is a drawing showing a ninth embodiment of a substrate processing device equipped with a steam supply unit according to the present invention.
FIG. 16 is a drawing showing a tenth embodiment of a substrate processing device equipped with a steam supply unit according to the present invention.

The configuration and operation of the substrate processing device according to the present invention will be described in detail with reference to the attached drawings.

Here, detailed descriptions of the contents described in the prior art and overlapping contents are omitted, and the description will focus on the newly added components of the present invention.

FIGS. 3 to 6 are drawings showing a substrate processing device equipped with an air control unit comprising a humidity control unit and an air supply unit according to the present invention.

Referring to FIG. 3, a first embodiment (2-1) of a substrate processing device equipped with an air conditioning unit according to the present invention will be described.

According to the first embodiment (2-1), the substrate processing device according to the present invention comprises a humidity control unit (200) that controls the humidity of a substrate processing space (S) where a processing process of a substrate (W) is performed.

In addition, at least one air supply unit (300) is provided at at least one location of the substrate processing space (S) to supply air to the substrate processing space (S), and the humidity control unit (200) is configured to control the humidity of air supplied to the substrate processing space (S) through the air supply unit (300).

The above air supply unit (300) and the above humidity control unit (200) form a pair to form the above air control unit (400).

The above substrate (W) may be a silicon wafer that is a semiconductor substrate. However, the present invention is not limited thereto, and the substrate (W) may be a transparent substrate such as glass used for a flat panel display device such as an LCD (liquid crystal display) or a PDP (plasma display panel). The shape and size of the substrate (W) are not limited by the drawings of the present invention, and may have substantially various shapes and sizes, such as circular and square plates.

The above substrate processing space (S) can be configured as a clean room isolated from the outside and in which the inflow and outflow of fluids are controlled.

The above substrate processing space (S) may be equipped with at least one chamber (110, 130) in which a processing process of the substrate (W) is performed, and a substrate transfer unit (120) for supporting and transferring the substrate (W).

The above at least one chamber (110, 130) includes a cleaning chamber (110) that performs a cleaning process of the substrate (W) and a drying chamber (130) that performs a drying process of the substrate (W).

The cleaning chamber (110) is supplied with a cleaning agent for cleaning the substrate (W). The cleaning agent may be supplied in a plurality of types depending on the type of contaminant to be treated. For example, an organic solvent and nitrogen (N2) gas may be used to remove resist. In addition, water, hydrogen fluoride (HF), isopropyl alcohol (IPA), and nitrogen (N2) gas may be used to remove silicon oxide (SiO). In addition, hydrochloric acid (HCl), ozone (O3), and nitrogen (N2) gas may be used to remove metal. In addition, ozone (O3) and nitrogen (N2) gas may be used to remove organic substances other than resist. In addition, water, isopropyl alcohol (IPA), and nitrogen (N2) gas may be used to remove ions of fluorine (F), chlorine (Cl), and ammonia (NH4). Additionally, ammonia water (APM), nitrogen (N2) gas, or argon (Ar) can be used to remove other particles.

In the above cleaning chamber (110), a rinsing process and a pretreatment process can be further performed on the substrate (W) on which the cleaning process has been performed, and accordingly, a rinsing agent such as pure water (DI) is supplied to rinse the substrate (W), and then a pretreatment agent is supplied to form a thin film (not shown) made of the pretreatment agent on the substrate (W).

The substrate (W) that has undergone a cleaning process, a rinsing process, and a pretreatment process in the cleaning chamber (110) is transferred to the drying chamber (130) by the substrate transfer unit (120), and a drying process is performed in which the substrate (W) is dried by a desiccant supplied from the drying chamber (130).

The above substrate transfer unit (120) supports the substrate (W) and transfers it from the cleaning chamber (110) to the drying chamber (130), and a transfer line (P), which is a transfer path for the substrate (W), is formed between the cleaning chamber (110) and the drying chamber (130).

The above drying agent is provided corresponding to the type of cleaning agent supplied on the substrate (W), and supercritical fluids such as carbon dioxide (CO2), water (H2O), methane (CH4), ethane (C2H6), propane (C3H8), ethylene (C2H4), propylene (C2H2), methanol (C2H3OH), ethanol (C2H5OH), sulfur hexafluoride (SF6), and acetone (C3H8O) can be used.

When supercritical carbon dioxide is used as the drying agent, isopropyl alcohol (IPA) is supplied as the pretreatment agent to form an isopropyl alcohol thin film on the substrate (W) and react with the supercritical carbon dioxide in the drying chamber (130), thereby allowing the substrate (W) to dry at a faster rate.

The above air supply unit (300) may be composed of a fan filter unit including at least one fan (not shown) that sucks in air from outside the substrate processing space (S) and introduces it into the interior, and at least one filter (not shown) that purifies gas introduced into the substrate processing space (S).

The above fan filter unit may be a unit in which at least one fan and at least one filter are modularized into one unit.

Air introduced into the substrate processing space (S) from the air supply unit (300) is discharged through an exhaust port (not shown) provided on one side of the substrate processing space (S), and the inflow and outflow of the air forms a predetermined airflow inside the chamber (S).

For example, the air supply unit (300) is provided at the upper portion of the substrate processing space (S), and the exhaust port is provided at the lower portion of the substrate processing space (S), so that a descending airflow (A) can be formed inside the substrate processing space (S).

The above descending airflow (A) pushes particles inside the substrate processing space (S) downward and discharges them through the exhaust port, thereby maintaining the cleanliness of the substrate processing space (S) and preventing contamination of the substrate (W) performing the substrate processing process.

The above humidity control unit (200) is configured to include at least one of a humidity reducing unit (210) that lowers humidity in the air and a humidifying unit (220) that increases humidity in the air.

The above humidity reducing unit (210) is configured as a heater that heats air, and air heated by the heater and having a lowered relative humidity is supplied to the substrate processing space (S) to lower the relative humidity inside the substrate processing space (S).

In addition, the above-described humidity reducing unit (220) may include a dehumidifying means (211, see FIGS. 5 and 6) that removes moisture in the air, so that air with moisture removed by the dehumidifying means and a lowered absolute humidity may be supplied to the substrate processing space (S) to lower the absolute humidity inside the substrate processing space (S).

In addition, the above-described dehumidifying unit (220) further includes a cooler that cools the air flowing to the dehumidifying means, so that moisture in the air cooled and condensed by the cooler is removed by the dehumidifying means, thereby increasing the moisture removal efficiency of the dehumidifying means.

An embodiment of the above dehumidifying means is described in detail in FIGS. 5 and 6 described below.

In addition, the humidifying unit (220) may be configured as a cooler that cools air, so that air cooled by the cooler and having a high relative humidity may be supplied to the substrate processing space (S) to increase the relative humidity inside the substrate processing space (S).

In addition, the humidifying unit (220) may include a humidifier that sprays water vapor into the air, and air with increased absolute humidity mixed with water vapor sprayed from the humidifier may be supplied to the substrate processing space (S) to increase the absolute humidity inside the substrate processing space (S).

The operation of the above humidity control unit (200) is controlled by a control unit (not shown).

The above control unit can be configured to control whether or not the humidity reducing unit (210) or the humidifying unit (220) is operated and the degree of operation depending on the position of the air supply unit (300) and the progress of the processing of the substrate (W).

In addition, the control unit may be configured to control whether or not to operate the humidity reducing unit (210) or the humidifying unit (220) and the operating intensity according to the humidity of the air supplied to the substrate processing space (S) through the air supply unit (300), i.e., the humidity of the supplied air.

For example, when the air supply unit (300) is provided on the upper side of the transfer line (P), and the cleaning, rinsing and pretreatment processes of the substrate (W) are completed in the cleaning chamber (110) and the substrate (W) is transferred by the substrate transfer unit (120), the control unit may be configured to determine whether the humidity of the supplied air is appropriate and control the operation of the humidity control unit (200).

To this end, the appropriate humidity of the transfer line (P), which is the appropriate humidity range of the air on the transfer line (P) through which the substrate (W) is transferred, can be preset in the control unit, and the control unit can compare the humidity of the supplied air with the appropriate humidity of the transfer line to control the operation of the humidity control unit (200).

Accordingly, when the humidity of the supply air is higher than the appropriate humidity of the transfer line, the humidity reducing unit (210) is operated to lower the humidity of the supply air, and when the humidity of the supply air is lower than the appropriate humidity of the transfer line, the humidifying unit (220) is operated to increase the humidity of the supply air, thereby forming an appropriate humidity of the air on the transfer line.

That is, it is possible to prevent excessive moisture or excessive dryness of air from forming on the transfer line (P) and prevent process defects in the substrate (W) from occurring.

In addition, the control unit can set the humidity reduction intensity by the humidity reducing unit (210) or the humidification intensity by the humidification unit (220) to be weak when the difference between the humidity of the supply air and the appropriate humidity of the transfer line is small, and can set the humidity reduction intensity by the humidity reducing unit (210) or the humidification intensity by the humidification unit (220) to be strong when the difference between the humidity of the supply air and the appropriate humidity of the transfer line is large.

For example, if the humidity reducing unit (210) is formed by the heater and the humidity of the supply air is higher than the appropriate humidity of the transfer line, the control unit can set the heat generation amount of the heater to be smaller as the difference between the humidity of the supply air and the appropriate humidity of the transfer line is smaller, and can set the heat generation amount of the heater to be larger as the difference between the humidity of the supply air and the appropriate humidity of the transfer line is larger, thereby controlling the operating intensity of the humidity reducing unit (210).

Referring to FIG. 4, a second embodiment (2-2) of a substrate processing device equipped with an air conditioning unit according to the present invention will be described.

According to the second embodiment (2-2), the substrate processing device according to the present invention follows the substrate processing device according to the first embodiment (2-1, see FIG. 3), but differs in that a plurality of air control units (400, 410, 420, 430) in which the air supply unit (300) and the humidity control unit (200) form a pair are provided.

The above-mentioned plurality of air conditioning units (400, 410, 420, 430) are respectively provided at multiple locations in the substrate processing space (S) and are configured to operate independently.

Accordingly, the control unit can control the plurality of air conditioning units (400, 410, 420, 430) to supply air having different humidity suitable for the processing process of the substrate (W) according to the position of each of the air conditioning units (400, 410, 420, 430) and the progress of the substrate processing process.

For example, the plurality of air conditioning units (400, 410, 420, 430) may include a first air conditioning unit (410) provided above an inlet line (P1) through which the substrate (W) is introduced into the cleaning chamber (110), a second air conditioning unit (420) provided above a transfer line (P), and a third air conditioning unit (430) provided above an outlet line (P2) through which the substrate (W) is withdrawn from the drying chamber (130).

At the lower part of the substrate processing space (S), exhaust ports (not shown) are provided at positions corresponding vertically to the first air conditioning unit (410), the second air conditioning unit (420), and the third air conditioning unit (430), so that air supplied from the first air conditioning unit (410), the second air conditioning unit (420), and the third air conditioning unit (430) can form descending airflows (A1, A, A2), respectively.

The above control unit can be set to operate the first air control unit (410) from the time the cleaning chamber (110) is opened until the substrate (W) is introduced or withdrawn into the cleaning chamber (110) and the cleaning chamber (110) is closed.

At this time, the humidity control unit (200) of the first air control unit (410) controls the humidity of the air supplied to the inlet line (P1) to satisfy a humidity suitable for the transport environment of the substrate introduced into the cleaning chamber (110), and the appropriate humidity of the inlet line can be set in advance in the control unit.

In addition, the humidity control unit (200) of the second air control unit (420) controls the humidity of the air supplied to the transfer line (P) so that it satisfies the appropriate humidity of the transfer line, and the appropriate humidity of the transfer line can be set in advance in the control unit.

In addition, the humidity control unit (200) of the third air control unit (430) controls the humidity of the air supplied to the extraction line (P2) to satisfy a humidity suitable for the transport environment of the substrate extracted from the drying chamber (130), and the appropriate humidity of the extraction line can be set in advance in the control unit.

Accordingly, the control unit controls the first air control unit (410), the second air control unit (420), and the third air control unit (430) to supply air with an appropriate humidity to the inlet line (P1), the transfer line (P), and the outlet line (P2), thereby preventing process defects of the substrate (W) and increasing the efficiency of the substrate processing process.

FIGS. 5 and 6 illustrate one embodiment and another embodiment of a dehumidifying means (211) constituting a dehumidifying unit (210) of a substrate processing device equipped with an air conditioning unit (400) according to the present invention.

As shown in Fig. 5, the dehumidifying means (211) may include an adsorbent that absorbs moisture.

The above-mentioned absorbent is provided on an air path (L) through which air from outside the substrate processing space (S) is supplied into the substrate processing space (S), and is configured to lower the absolute humidity of the air by absorbing moisture in the air supplied into the substrate processing space (S) through the absorbent.

In particular, the dehumidifying means (211) may be formed of a dehumidifying rotor (212) that includes the absorbent material and rotates around an axis provided at the center and alternately passes through the first region (212a) and the second region (212b).

The above first region (212a) is provided on the air path (L) so that air from outside the substrate processing space (S) passes through the first region (212a) and is supplied into the substrate processing space (S).

At this time, the first region (212a) is configured as a dehumidifying region that absorbs moisture in the air, so that the absolute humidity in the air decreases as moisture in the air passing through the first region (212a) is absorbed by the dehumidifying rotor (212) passing through the first region (212a).

In addition, the second region (212b) is configured as a regeneration region that dries and regenerates the dehumidifying rotor (212) in which moisture is adsorbed in the first region (212a), so that the dehumidifying rotor (212) can alternately pass through the first region (212a) and the second region (212b) to repeat dehumidification and regeneration.

At this time, a cooler (213) for cooling the air flowing into the first region (212a) and a heater (214) for heating and drying the second region (212b) are further provided, thereby increasing the dehumidification and regeneration efficiency of the dehumidifying rotor (212).

In addition, as shown in Fig. 6, the dehumidifying means (211) may include a moisture capturing unit (215) that captures moisture that is condensed water vapor in the air, and a moisture discharge line (216) that discharges moisture captured in the moisture capturing unit (215) to the outside.

The above moisture collection unit (215) is formed in a beaker shape with an open top, and is provided on the lower side of an air path (L1) through which air cooled by a cooler (217) flows, so that moisture that is cooled by water vapor in the air and condensed falls by gravity is captured.

At this time, in order to increase the moisture collection rate of the moisture collection unit (215), the air flow path (L1) may be formed in a zigzag shape in the up-down direction.

For example, air cooled by the cooler (217) is supplied to the inner side (215a) of the moisture collection unit (215) and then moves upward along the side wall (215b) of the moisture collection unit (215) to be supplied to the substrate processing space (S), so that the air flow path (L1) can be formed in a zigzag shape in the vertical direction.

Accordingly, the time for which the cooled air flows through the upper part of the moisture collection unit (215) can be increased, thereby increasing the moisture collection rate.

In addition, the moisture discharge line (216) may be connected to the lower end of the moisture collection unit (215) so that moisture collected in the moisture collection unit (215) descends by gravity and is discharged through the moisture discharge line (216).

At this time, the lower part of the moisture collection unit (215) may be formed to slope upward based on the connection part with the moisture discharge line (216), so that the moisture captured in the moisture collection unit (215) may be guided to descend along the slope of the lower part of the moisture collection unit (215) and be discharged to the moisture discharge line (216).

As described above, according to the substrate processing device of the present invention, by controlling the humidity in the air supplied to the substrate processing space (S), it is possible to prevent excessive moisture or excessive dryness from forming around the substrate (W) and prevent occurrence of process defects in the substrate (W).

FIGS. 7 to 16 are drawings of a substrate processing device (3-1 to 3-10) equipped with a steam supply unit (200-1) as a humidity control unit (200) according to the present invention, which supplies steam to the substrate processing space (S-1) inside a drying chamber (130) to control the humidity of the substrate processing space (S-1).

Referring to FIG. 7, a first embodiment (3-1) of a substrate processing device equipped with a steam supply unit according to the present invention will be described.

In general, the drying chamber (130) is opened when the substrate (W) is brought into the drying chamber (130) or taken out from the inside of the drying chamber (130) to the outside, and is maintained in a sealed state while the processing process of the substrate (W) is performed inside the drying chamber (130).

The above drying chamber (130) is composed of a first housing (130-1) and a second housing (130-2) that are mutually coupled to form a sealed substrate processing space (S-1) inside.

The drying chamber (130) is provided so that the first housing (130-1) maintains a fixed position, and a driving unit (136) is provided in the second housing (130-2), so that the second housing (130-2) moves by the driving of the driving unit (136) and is connected or separated from the first housing (130-1) to open and close.

In particular, the first housing (130-1) may be configured to be coupled to the upper portion of the second housing (130-2), and the driving unit (136) may be configured as a cylinder that moves up and down, so that the second housing (130-2) may move up and down by driving the cylinder and be coupled to or separated from the first housing (130-1).

The above drying chamber (130) is sealed by being combined with the first housing (130-1) as the second housing (130-2) moves upward due to the extension of the cylinder, and is opened by being separated from the first housing (130-1) as the second housing (130-2) moves downward due to the contraction of the cylinder.

When the above drying chamber (130) is opened, an opening (135) is formed between the first housing (130-1) and the second housing (130-2) to connect the inside and the outside of the drying chamber (130), and a substrate (W) having a thin film (B) formed on the upper portion is introduced into the substrate processing space (S-1) inside the drying chamber (130) through the opening (135).

A steam supply hole (133) that connects the inside and outside of the drying chamber (130) is formed in the first housing (130-1).

The above steam supply hole (133) may be formed on one side of the upper portion of the substrate processing space (S-1) of the drying chamber (130) and may be formed on the upper portion of the first housing (130-1).

The above steam supply hole (133) is configured to connect an outer communication port (131) formed on the outer wall of the drying chamber (130) and an inner communication port (132) formed on the inner wall of the drying chamber (130).

The above steam supply unit (200-1) comprises a steam supply tank (230) that supplies the steam and a steam supply path (231) through which the steam flows, and the steam supply path (231) is connected to the outer communication port (131), so that the steam supplied from the steam supply unit (200-1) to the steam supply hole (133) flows vertically downward and is supplied to the substrate processing space (S-1) of the drying chamber (130).

In addition, a steam supply nozzle (232) having at least one injection port (233) at an end is connected to the inner communication port (132), so that the steam supplied through the steam supply hole (133) is sprayed into the substrate processing space (S-1) of the drying chamber (130) through the steam supply nozzle (232).

The above steam supply nozzle (232) may be provided in the form of a showerhead in which at least one injection port (233) is formed radially, so that the steam can be evenly distributed in the substrate processing space (S-1) of the drying chamber (130).

The above vapor descends downward from the upper portion of the substrate processing space (S-1) of the drying chamber (130) and is dispersed to fill the inside of the drying chamber (130), and the substrate (W) is introduced into the inside of the drying chamber (130) filled with the vapor, thereby preventing drying of the thin film (B) on the substrate (W) and preventing process defects such as pattern collapse.

At this time, the steam supply unit (200-1) is configured to supply the steam at a sufficiently slow flow rate, thereby allowing the steam to descend with sufficient dwell time, thereby stably forming a steam atmosphere inside the drying chamber (130).

In addition, the steam is composed of a component that is highly reactive with the drying agent used in the drying process performed in the drying chamber (130), thereby increasing the drying efficiency of the substrate (W).

In particular, the steam may be supplied with the same component as the thin film (B) so as to prevent drying of the thin film (B) and to supplement the thin film (B) dried during transport.

For example, when supercritical carbon dioxide is used as the drying agent in the drying chamber (130), isopropyl alcohol vapor is filled inside the drying chamber (130), and the substrate (W) on which a thin film (B) made of isopropyl alcohol is formed is introduced into the drying chamber (130) and dried, thereby preventing drying of the thin film (B) until the drying process is initiated, thereby increasing the drying efficiency of the substrate (W).

Referring to FIG. 8, a second embodiment (3-2) of a substrate processing device equipped with a steam supply unit (200-1) according to the present invention will be described.

The substrate processing device according to the second embodiment (3-2) follows the configuration of the first embodiment (3-1, see FIG. 7), but differs in that the steam supply hole (133) is formed on one horizontal side of the substrate processing space (S-1) of the drying chamber (130).

According to the second embodiment (3-2), steam supplied from the steam supply unit (200-1) is supplied horizontally through the steam supply hole (133) to the substrate processing space (S-1) of the drying chamber (130), so that the vapor retention time can be increased and the vapor atmosphere inside the drying chamber (130) can be formed more stably.

At this time, the steam supply nozzle (232) may be extended toward the center of the drying chamber (130) so that the steam may be evenly distributed inside the drying chamber (130).

Referring to FIG. 9, a third embodiment (3-3) of a substrate processing device equipped with a steam supply unit (200-1) according to the present invention will be described.

The substrate processing device according to the third embodiment (3-3) follows the configuration of the second embodiment (3-2, see FIG. 8) described above, but differs in that the inner communication port (132) of the steam supply hole (133) is formed higher than the outer communication port (131).

According to the third embodiment (3-3), since the steam supplied from the steam supply unit (200-1) is supplied obliquely upward through the steam supply hole (133) to the substrate processing space (S-1) of the drying chamber (130), not only is the residence time of the steam further increased, but also the steam density of the substrate processing space (S-1) of the drying chamber (130) is increased, thereby forming a more stable steam atmosphere inside the drying chamber (130).

At this time, the steam supply nozzle (232) may also be formed obliquely so that the end faces the top of the drying chamber (130) to ensure smooth upward supply of the steam.

Referring to FIG. 10, a fourth embodiment (3-4) of a substrate processing device equipped with a steam supply unit (200-1) according to the present invention will be described.

The substrate processing device according to the fourth embodiment (3-4) follows the configuration of the second embodiment (3-2, see FIG. 8) described above, but differs in that at least one injection port (233) provided in the steam supply nozzle (232) is formed obliquely so as to face the upper end of the drying chamber (130).

According to the fourth embodiment (3-4), since the steam supplied from the steam supply unit (200-1) is supplied obliquely upward through at least one injection port (233) to the substrate processing space (S-1) of the drying chamber (130), not only is the residence time of the steam further increased, but also the steam density of the substrate processing space (S-1) of the drying chamber (130) is increased, thereby forming a more stable steam atmosphere inside the drying chamber (130).

Referring to FIG. 11, a fifth embodiment (3-5) of a substrate processing device equipped with a steam supply unit (200-1) according to the present invention will be described.

The substrate processing device according to the fifth embodiment (3-5) follows the configuration of the first embodiment (3-1, see FIG. 7) described above, but differs in that the steam supply unit (200-1) provided on the outside of the drying chamber (130) supplies steam to the substrate processing space (S-1) of the drying chamber (130) through the opening unit (135) when the drying chamber (130) is opened.

The above steam supply unit (200-1) includes a steam supply tank (230) and a steam supply path (231), and includes a steam supply nozzle (240) having at least one injection port (235) at the end.

Accordingly, the steam flows from the steam supply tank (230) through the steam supply path (231) and is sprayed into the substrate processing space (S-1) of the drying chamber (130) through at least one injection port (235) of the steam supply nozzle (240).

The at least one nozzle (235) may be formed obliquely so as to face upwardly inside the drying chamber (130) so that the vapor is supplied to the substrate processing space (S-1) of the drying chamber (130).

The above steam supply unit (200-1) is configured to start supplying the steam before the drying chamber (130) is opened and the substrate (W) is introduced into the drying chamber (130), thereby preventing the drying of the thin film (B) on the substrate (W) and preventing process defects such as pattern collapse by allowing the substrate (W) to be introduced into the inside of the drying chamber (130) where a steam atmosphere is formed.

Referring to FIG. 12, a sixth embodiment (3-6) of a substrate processing device equipped with a steam supply unit (200-1) according to the present invention will be described.

The substrate processing device according to the sixth embodiment (3-6) follows the configuration of the fifth embodiment (3-5, see FIG. 11), but differs in that the steam supply nozzle (240) is provided to be movable, so that when the drying chamber (130) is opened, the steam supply nozzle (240) moves to be brought into or taken out of the drying chamber (130) through the opening (135).

The above steam supply nozzle (240) can move linearly by driving a linear driving unit (not shown), and the linear driving unit is configured as a cylinder that extends horizontally and can be provided to reciprocate the steam supply nozzle (240) horizontally.

The above steam supply nozzle (240) is moved toward the drying chamber (130) by the extension drive of the cylinder when the drying chamber (130) is opened, and is introduced into the drying chamber (130) through the opening (135), and is configured to spray steam from the inside of the drying chamber (130) toward the inner upper part of the drying chamber (130). (dotted line)

Accordingly, the vapor can be supplied more stably to the substrate processing space (S-1) of the drying chamber (130), and the vapor descends and is evenly distributed inside the drying chamber (130), thereby stably forming a vapor atmosphere inside the drying chamber (130).

In addition, the steam supply nozzle (240) moves in a direction away from the drying chamber (130) by the hydraulic operation of the cylinder before the substrate (W) is introduced into the drying chamber (130) and the drying chamber (130) is sealed, and is taken out of the drying chamber (130), and waits outside the drying chamber (130) while the drying process is performed in the sealed drying chamber (130). (Solid line notation)

Referring to FIG. 13, a seventh embodiment (3-7) of a substrate processing device equipped with a steam supply unit (200-1) according to the present invention will be described.

The substrate processing device according to the seventh embodiment (3-7) follows the configuration of the sixth embodiment (3-6, see FIG. 12), but differs in that the steam supply nozzle (240) is configured to rotate by driving the rotary drive unit, so that when the drying chamber (130) is opened, the steam supply nozzle (240) rotates and is introduced into or taken out of the drying chamber (130) through the opening unit (135).

The above-mentioned rotary driving unit may be configured with a motor that rotates clockwise or counterclockwise, and may be provided to rotate the steam supply nozzle (240) clockwise or counterclockwise in the longitudinal direction.

At the bottom of Fig. 13, an enlarged view as viewed from a plane is added to illustrate the rotation of the steam supply nozzle (240) in detail.

The above steam supply nozzle (240) is moved counterclockwise by the unidirectional rotation of the motor when the drying chamber (130) is opened, and is introduced into the drying chamber (130) through the opening (135), and is configured to spray steam from the inside of the drying chamber (130) toward the inner upper portion of the drying chamber (130) (solid line).

In addition, the steam supply nozzle (240) moves clockwise by the counter-rotating drive of the motor before the substrate (W) is introduced into the drying chamber (130) and the drying chamber (130) is sealed, and is taken out of the drying chamber (130), and waits outside the drying chamber (130) while the drying process is performed in the sealed drying chamber (130) (dotted line mark).

The rotation angle (α) of the above steam supply nozzle (240) can be formed at 90 to 180 degrees.

Referring to FIG. 14, an eighth embodiment (3-8) of a substrate processing device equipped with a steam supply unit (200-1) according to the present invention will be described.

The substrate processing device according to the 8th embodiment (3-8) follows the configuration of the 7th embodiment (3-7, see FIG. 13) described above, but differs in that the rotary driving part rotates the steam supply nozzle (240) clockwise or counterclockwise on a vertical plane to introduce (indicated by a dotted line) or remove (indicated by a solid line) it from the drying chamber (130).

According to the eighth embodiment (3-8), the movement path of the steam supply nozzle (240) and the movement path of the substrate transfer unit (not shown) that supports the substrate (W) and is horizontally introduced and removed from the drying chamber (130) do not overlap, thereby preventing mutual interference, and thus the movement of the substrate transfer unit and the steam supply nozzle (240) can be performed independently.

The rotation angle (β) of the above steam supply nozzle (240) can be formed at 90 to 180 degrees.

Referring to FIG. 15, a ninth embodiment (3-9) of a substrate processing device equipped with a steam supply unit (200-1) according to the present invention will be described.

The substrate processing device according to the ninth embodiment (3-9) follows the configuration of the fifth embodiment (3-5, see FIG. 11), but differs in that the steam supply nozzle (240) is configured to be elastic so that when the drying chamber (130) is opened, the steam supply nozzle (240) can be brought into or taken out of the drying chamber (130) through the opening (135).

The above steam supply nozzle (240) is provided to expand or contract by driving an expansion shaft driving unit (not shown), and the expansion shaft driving unit may be formed of a cylinder that expands and contracts.

The above steam supply nozzle (240) is extended in the direction toward the drying chamber (130) by the extension drive of the cylinder when the drying chamber (130) is opened, and is introduced into the drying chamber (130) through the opening (135), and is configured to spray steam from the inside of the drying chamber (130) toward the inner upper portion of the drying chamber (130) (dotted line notation).

Accordingly, the vapor can be supplied more stably to the substrate processing space (S-1) of the drying chamber (130), and the vapor descends and is evenly distributed inside the drying chamber (130), thereby stably forming a vapor atmosphere inside the drying chamber (130).

In addition, the steam supply nozzle (240) is contracted in a direction away from the drying chamber (130) by the hydraulic cylinder before the substrate (W) is introduced into the drying chamber (130) and the drying chamber (130) is sealed, and is then taken out of the drying chamber (130), and while the drying process is performed in the sealed drying chamber (130), it waits outside the drying chamber (130) (solid line).

Referring to FIG. 16, a tenth embodiment (3-10) of a substrate processing device equipped with a steam supply unit (200-1) according to the present invention will be described.

The substrate processing device according to the 10th embodiment (3-10) follows the configuration of the above-described 5th embodiment (3-5, see FIG. 11), but differs in that the rotating part (243) of the steam supply nozzle (240) is configured to rotate around the hinge part (242).

According to the 10th embodiment (3-10), the steam supply nozzle (240) is composed of the hinge part (242), the fixed part (241) formed with the hinge part (242) interposed therebetween, and the rotating part (243).

The above fixed part (241) is connected to the steam supply path (231) and is relatively fixed in position to support the hinge part (242) and the rotating part (243).

The above rotating part (243) is provided with at least one injection port (235) at its end and rotates around the hinge part (242).

For this purpose, a hinge drive unit (not shown) may be provided, and by driving the hinge drive unit, the rotating unit (243) rotates clockwise or counterclockwise on a vertical plane.

The above hinge driving unit may be formed by a motor that rotates the above rotating unit (243).

The above-mentioned rotating part (243) is rotated counterclockwise on a vertical plane by the driving of the motor when the drying chamber (130) is opened so that the end of the steam supply nozzle (240) faces upward toward the inside of the drying chamber (130), and then sprays steam toward the upper inside of the drying chamber (130) (dotted line).

Accordingly, since the steam is supplied obliquely upward to the substrate processing space (S-1) of the drying chamber (130), not only is the residence time of the steam increased, but also the steam density of the substrate processing space (S-1) of the drying chamber (130) is increased, thereby forming a more stable steam atmosphere inside the drying chamber (130).

In addition, the steam supply nozzle (240) rotates clockwise by the driving of the motor before the substrate (W) is introduced into the drying chamber (130) and the drying chamber (130) is sealed, and returns to its original position, and waits in the original position while the drying process is performed in the sealed drying chamber (130) (solid line).

The configuration of the steam supply nozzle (240) of the above-mentioned 10th embodiment (3-10) can also be applied to the above-mentioned 6th to 9th embodiments (3-6, 3-7, 3-8, 3-9) (not shown).

Accordingly, when the drying chamber (130) is opened, a steam supply nozzle (240) is introduced into the inside of the drying chamber (130), and then the rotating part (243) of the steam supply nozzle (240) rotates around the hinge part (242) so that the end of the steam supply nozzle (240) faces upward toward the inside of the drying chamber (130), thereby spraying steam toward the upper inside of the drying chamber (130).

Accordingly, not only is the vapor supplied more stably to the substrate processing space (S-1) of the drying chamber (130), but also the vapor density of the substrate processing space (S-1) of the drying chamber (130) increases and the vapor retention time is further increased, so that a vapor atmosphere can be stably formed inside the drying chamber (130).

In addition, in order to prevent particles that may be generated at the hinge portion (242) due to the rotation of the rotating portion (243) from entering the inside of the drying chamber (130), the rotating portion (243) may be introduced into the drying chamber (130), but the hinge portion (242) may be positioned outside of the drying chamber (130) to limit the movement of the steam supply nozzle (240).

As described above, according to the substrate processing device equipped with a steam supply unit (200-1) according to the present invention, steam is supplied to the upper portion of the substrate processing space (S-1) of the drying chamber (130) and descends downward to form a steam atmosphere inside the drying chamber (130), thereby preventing the thin film (B) on the substrate (W) introduced into the drying chamber (130) from drying and preventing process defects such as pattern collapse.

In addition, by supplying the steam at a sufficiently slow flow rate so that the steam has sufficient residence time and descends, a steam atmosphere can be stably formed inside the drying chamber (130).

In addition, the steam is supplied as a steam composed of a component highly reactive with the desiccant, thereby increasing the efficiency of the drying process of the substrate (W) performed in the drying chamber (130).

In addition, the steam may be supplied with the same component as the thin film (B) to prevent drying of the thin film (B) and to supplement the thin film (B) dried during transport.

In addition, by supplying the steam horizontally to the substrate processing space (S-1) of the drying chamber (130), the residence time of the steam can be increased and a steam atmosphere can be formed more stably inside the drying chamber (130).

In addition, by making the inner communication port (132) of the steam supply hole (133) of the drying chamber (130) positioned higher than the outer communication port (131) so that the steam is obliquely supplied upward to the substrate processing space (S-1) of the drying chamber (130), not only the vapor retention time is increased, but also the vapor density of the substrate processing space (S-1) of the drying chamber (130) is increased, so that a vapor atmosphere can be formed more stably inside the drying chamber (130).

In addition, by forming at least one injection port (233) of the steam supply nozzle (232) through which the steam is sprayed obliquely upward so that the steam is supplied obliquely upward to the substrate processing space (S-1) of the drying chamber (130), not only the residence time of the steam is increased, but also the steam density of the substrate processing space (S-1) of the drying chamber (130) is increased, so that a steam atmosphere can be formed more stably inside the drying chamber (130).

In addition, at least one injection port (233) of the steam supply nozzle (232) through which the steam is sprayed may be formed in a radial showerhead shape so that the steam can be evenly distributed in the substrate processing space (S-1) of the drying chamber (130).

In addition, by supplying the steam from the steam supply unit (200-1) provided on the outside of the drying chamber (130) through the opening (135) of the drying chamber (130) to the substrate processing space (S-1) of the drying chamber (130), the existing substrate drying chamber can be utilized as is, thereby increasing the convenience of the process and reducing incidental costs.

In addition, the steam supply nozzle (240) of the steam supply unit (200-1) provided on the outside of the drying chamber (130) moves to supply steam to the substrate processing space (S-1) of the drying chamber (130) after it is introduced into the drying chamber (130) through the opening (135), thereby forming a more stable steam atmosphere inside the drying chamber (130).

In addition, the steam supply nozzle (234) is configured to rotate on a vertical plane and be introduced into the drying chamber (130), thereby preventing interference that may occur when the movement paths of the steam supply nozzle (240) and the substrate transfer unit overlap, and thus each can move through an independent movement path.

In addition, the steam supply nozzle (234) that rotates on a vertical plane is configured to rotate until its end faces the substrate processing space (S-1) of the drying chamber (130), thereby allowing the steam to be supplied obliquely upward, thereby not only increasing the residence time of the steam but also increasing the steam density of the substrate processing space (S-1) of the drying chamber (130), thereby forming a more stable steam atmosphere inside the drying chamber (130).

In addition, the steam supply nozzle (240) is provided with a hinge part (242) so that the rotating part (243) rotates around the hinge part (242), and the rotating part (243) is configured to rotate until its end faces the substrate processing space (S-1) of the drying chamber (130), thereby allowing the steam to be supplied obliquely upward, thereby not only increasing the residence time of the steam, but also increasing the steam density of the substrate processing space (S-1) of the drying chamber (130), thereby forming a steam atmosphere more stably inside the drying chamber (130).

The present invention is not limited to the above-described embodiments, and obvious modifications may be made by a person skilled in the art without departing from the technical spirit of the present invention as claimed in the claims, and such modifications fall within the scope of the present invention.

W: Substrate A,A1,A2: Downdraft
L, L1: Air path P: Conveyor line
P1: Inlet line P2: Outlet line
S: Substrate processing space 110: Cleaning chamber
120: Substrate transfer section 130: Drying chamber
200: Humidity control unit 210: Humidity reduction unit
220: Humidifying section 211: Dehumidifying means
212: Dehumidifier rotor 213: Cooler
214: Heater 215: Moisture collection unit
216: Water discharge line 217: Cooler
300: Air supply unit 400,410,420,430: Air control unit
S-1: Substrate processing space inside the drying chamber
130-1: 1st housing 130-2: 2nd housing
131: Outer communication port 132: Inner communication port
133: Steam supply hole 135: Opening
136: Drive unit 200-1: Steam supply unit
231: Steam supply path 232: Steam supply nozzle
233: Nozzle 230: Steam supply tank
240: Steam supply nozzle 241: Fixed part
242: Hinge 243: Rotating part
235: Nozzle B: Thin film

Claims (47)

A humidity control unit for controlling the humidity of the air in a substrate processing space where a substrate processing process is performed; and
It comprises at least one chamber provided in a substrate processing space, accommodating the substrate, and performing a processing process of the substrate;
The above humidity control unit includes a steam supply unit that supplies steam to the substrate processing space,
A substrate processing device in which the substrate is introduced into the substrate processing space to which the vapor is supplied in a state in which a thin film is formed on the upper portion. In the first paragraph,
At least one air supply unit provided at at least one location in the substrate processing space and supplying air to the substrate processing space;
A substrate processing device characterized in that the humidity control unit is configured to control the humidity of air supplied to the substrate processing space through the air supply unit. In the first paragraph,
A substrate processing device characterized in that the substrate processing space is formed as a clean room that is sealed off from the outside and controls the entry and exit of fluids. In the second paragraph,
A substrate processing device, characterized in that the humidity control unit comprises at least one of a humidity reducing unit that lowers humidity in the air and a humidifying unit that increases humidity in the air. In paragraph 4,
A substrate processing device characterized in that the above-mentioned humidity reducing unit is formed of a heater that heats air, so that air heated by the heater and having a lowered relative humidity is supplied to the substrate processing space. In paragraph 4,
A substrate processing device characterized in that the above-mentioned humidity reducing unit comprises a dehumidifying means for removing moisture, so that air having a lowered absolute humidity as moisture is removed by the dehumidifying means is supplied to the substrate processing space. In Article 6,
A substrate processing device characterized in that the above-mentioned humidity reducing unit further includes a cooler that cools air, so that moisture cooled by the cooler and condensed is removed by the dehumidifying means. In clause 6 or 7,
A substrate processing device characterized in that the above dehumidifying means further includes an absorbent material that absorbs moisture. In Article 8,
The above dehumidifying means comprises a dehumidifying rotor that rotates around an axis provided in the center and alternately passes through the first and second regions.
The above first region is a dehumidifying region provided on an air path through which air from outside the substrate processing space is supplied into the substrate processing space, and moisture in the air flowing into the substrate processing space through the first region is adsorbed onto a dehumidifying rotor passing through the first region;
A substrate processing device characterized in that the second region is a regeneration region configured to dry and regenerate the dehumidifying rotor in which moisture has been adsorbed in the first region. In Article 9,
A substrate processing device characterized in that it further comprises a heater that heats the above-mentioned regeneration area and regenerates the above-mentioned dehumidifying rotor in which moisture has been adsorbed. In Article 7,
The above dehumidifying means,
A moisture collection unit in the shape of a beaker with an open top, which is provided on the lower side of an air passage through which air cooled by the above cooler flows and collects moisture that is condensed water vapor in the air; and
A substrate processing device characterized by comprising: a moisture discharge line for discharging moisture captured in the moisture collection unit to the outside; In Article 11,
A substrate processing device characterized in that the air flow path of air cooled by the cooler and supplied to the substrate processing space is formed in a zigzag shape in the vertical direction. In Article 11,
The above moisture discharge line is connected to the lower part of the moisture collection unit;
A substrate processing device characterized in that the lower part of the moisture collection unit is formed to slope upward based on the connection part with the moisture discharge line. In paragraph 4,
The above humidifying unit is composed of a cooler that cools the air,
A substrate processing device characterized in that air cooled by the cooler and having a high relative humidity is supplied to the substrate processing space through the air supply unit. In paragraph 4,
The above humidifying unit is composed of a humidifier that sprays water vapor,
A substrate processing device characterized in that air having a high absolute humidity mixed with water vapor sprayed from the humidifier is supplied to the substrate processing space through the air supply unit. In paragraph 4,
A substrate processing device characterized by including a control unit that controls the operation of the humidity control unit. In Article 16,
A substrate processing device characterized in that the control unit is configured to control whether the humidity reducing unit and the humidifying unit are operated and the operating intensity according to the position of the air supply unit and the progress of the substrate processing process. In Article 16,
A substrate processing device characterized in that the control unit is configured to control whether the humidity reducing unit and the humidifying unit are operated and the operating intensity according to the humidity of the air supplied to the substrate processing space. In the second paragraph,
The above air supply unit and the above humidity control unit are paired to form a plurality of air control units;
A substrate processing device characterized in that the plurality of air conditioning units are respectively provided at a plurality of locations in the substrate processing space and are configured to operate independently. In Article 19,
A substrate processing device characterized by further comprising a control unit for independently controlling the operation of at least one of the air conditioning units. In the second paragraph,
A substrate processing device characterized in that the substrate processing space is provided with a substrate transfer unit for transferring the substrate. In Article 21,
The at least one chamber includes a cleaning chamber in which a cleaning process of the substrate is performed and a drying chamber in which a drying process of the substrate is performed;
A transfer line is formed between the cleaning chamber and the drying chamber, which is a path along which the substrate is transferred by the substrate transfer unit;
A substrate processing device characterized in that the air supply unit is provided on the upper side of the transport line and is configured to form a descending airflow on the transport line. In the second paragraph,
A substrate processing device characterized in that the air supply unit comprises at least one fan that draws in external air and introduces it into the substrate processing space. In the second paragraph,
A substrate processing device characterized in that the substrate processing space is provided with at least one exhaust port through which internal air is discharged to the outside, so that air supplied from the air supply unit is discharged through the exhaust port to form an airflow in a certain direction. In Article 19,
A substrate processing device characterized in that the substrate processing space is provided with a plurality of exhaust ports through which internal air is discharged to the outside, and the plurality of exhaust ports are respectively provided to correspond to the plurality of air control units, so that air supplied from each air control unit is discharged through the corresponding exhaust ports, thereby forming an airflow in a certain direction. delete In the first paragraph,
A substrate processing device, characterized in that the substrate processing space is an internal space of a chamber in which a drying process of the substrate is performed. In Article 27,
A steam supply hole is formed to connect the inside and outside of the chamber by connecting the outer communication hole formed on the outer wall of the chamber and the inner communication hole formed on the inner wall of the chamber.
The above steam supply hole is formed at the top of the chamber,
A substrate processing device characterized in that the steam supply unit is connected to the outer communication port of the steam supply hole to supply steam from the outside of the chamber to the substrate processing space on the inside. In Article 28,
A substrate processing device characterized in that the steam supply unit includes a steam supply nozzle that is connected to the inner communication port and has at least one injection port at an end to inject the steam supplied through the steam supply hole into the substrate processing space through the at least one injection port. In Article 29,
A substrate processing device, wherein the steam supply nozzle is a showerhead-shaped device in which at least one injection port is formed radially. In Article 28,
A substrate processing device characterized in that the steam supply hole horizontally penetrates one side of the chamber, and the inner communication port is formed above the outer communication port so that the steam rises obliquely along the steam supply hole and is supplied to the substrate processing space. In Article 29,
The above steam supply hole is formed to penetrate horizontally through one side of the chamber,
A substrate processing device, characterized in that the steam supply nozzle extends toward the upper center of the substrate processing space. In Article 29,
The above steam supply hole is formed to penetrate horizontally through one side of the chamber,
A substrate processing device, characterized in that the steam supply nozzle is provided with an end that faces obliquely upward, so that the steam rises obliquely along the steam supply nozzle and is supplied to the substrate processing space. In Article 29,
The above steam supply hole is formed to penetrate horizontally through one side of the chamber,
A substrate processing device, wherein the at least one nozzle is formed obliquely so that the vapor passing through the at least one nozzle rises obliquely and is supplied to the substrate processing space. In Article 27,
The above chamber is composed of a first housing and a second housing, and is configured to open and close as the first housing and the second housing are combined or separated.
When the chamber is opened, an opening is formed between the first housing and the second housing to connect the inside and outside of the chamber,
A substrate processing device characterized in that the steam supply unit is provided on the outside of the chamber, and is configured to supply the steam to the inside of the chamber, which becomes the substrate processing space, through the opening when the chamber is opened. In Article 35,
The above steam supply unit includes a steam supply nozzle that sprays the steam;
A substrate processing device, characterized in that the end of the steam supply nozzle is provided with at least one injection port through which the steam is sprayed. In Article 36,
A substrate processing device, wherein the at least one nozzle is formed obliquely so that the vapor passing through the at least one nozzle rises obliquely and is supplied to the inner upper space of the chamber. In Article 36,
A substrate processing device, characterized in that the steam supply nozzle is provided to be movable, so that when the chamber is opened, the steam supply nozzle moves to be introduced into or taken out of the inside of the chamber through the opening. In Article 38,
A substrate processing device characterized in that a linear driving unit for linearly moving the steam supply nozzle is provided, so that the steam supply nozzle advances and retreats linearly and is introduced or removed into the chamber through the opening. In Article 38,
A substrate processing device characterized in that a rotary driving part for rotating the steam supply nozzle is provided, so that the steam supply nozzle rotates clockwise or counterclockwise and is introduced or taken out into the chamber through the opening. In Article 40,
A substrate processing device, characterized in that the above-mentioned rotary driving part is configured to rotate the above-mentioned steam supply nozzle on a horizontal plane. In Article 40,
A substrate processing device, characterized in that the above-mentioned rotary driving part is configured to rotate the above-mentioned steam supply nozzle in a vertical plane. In Article 36,
A substrate processing device, characterized in that the steam supply nozzle is provided to be elastic, so that when the chamber is opened, the steam supply nozzle expands or contracts to be introduced into or taken out of the inside of the chamber through the opening. In Article 36,
The above steam supply nozzle is composed of a hinge part that serves as a center of rotation, and a fixed part and a rotating part formed with the hinge part between them;
The above fixed part is connected to the steam supply path of the steam supply part, which is the steam supply path, and is relatively fixed in position to support the hinge part and the rotating part;
A substrate processing device characterized in that the rotating part includes an end of the steam supply nozzle having at least one injection port, and rotates clockwise or counterclockwise about the hinge part as a center of rotation, such that the end of the steam supply nozzle faces the inner upper space of the chamber. In Article 44,
A substrate processing device, characterized in that the hinge portion is located on the outside of the chamber. In the first paragraph,
The above chamber is configured to perform a drying process of the substrate by supplying a desiccant onto the substrate when the substrate is introduced into the substrate processing space.
A substrate processing device, characterized in that the vapor is composed of the same components as the thin film, but is composed of a component that is reactive with the drying agent. In the first paragraph,
A substrate processing device characterized in that the steam is supplied downward from the upper portion of the substrate processing space.