KR102401909B1 - 반응 최적화를 위한 고속 스크리닝 분석 시스템 - Google Patents
반응 최적화를 위한 고속 스크리닝 분석 시스템 Download PDFInfo
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- KR102401909B1 KR102401909B1 KR1020180102650A KR20180102650A KR102401909B1 KR 102401909 B1 KR102401909 B1 KR 102401909B1 KR 1020180102650 A KR1020180102650 A KR 1020180102650A KR 20180102650 A KR20180102650 A KR 20180102650A KR 102401909 B1 KR102401909 B1 KR 102401909B1
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- 238000012106 screening analysis Methods 0.000 title claims description 11
- 238000006243 chemical reaction Methods 0.000 title abstract description 56
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 238000010521 absorption reaction Methods 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 6
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- 229910052793 cadmium Inorganic materials 0.000 claims description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
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- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 2
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- 239000011572 manganese Substances 0.000 claims 2
- BMSYAGRCQOYYMZ-UHFFFAOYSA-N [As].[As] Chemical compound [As].[As] BMSYAGRCQOYYMZ-UHFFFAOYSA-N 0.000 claims 1
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- 150000002500 ions Chemical class 0.000 description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 4
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- UOFGSWVZMUXXIY-UHFFFAOYSA-N 1,5-Diphenyl-3-thiocarbazone Chemical compound C=1C=CC=CC=1N=NC(=S)NNC1=CC=CC=C1 UOFGSWVZMUXXIY-UHFFFAOYSA-N 0.000 description 1
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- WCDSVWRUXWCYFN-UHFFFAOYSA-N 4-aminobenzenethiol Chemical compound NC1=CC=C(S)C=C1 WCDSVWRUXWCYFN-UHFFFAOYSA-N 0.000 description 1
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- KSPIHGBHKVISFI-UHFFFAOYSA-N Diphenylcarbazide Chemical group C=1C=CC=CC=1NNC(=O)NNC1=CC=CC=C1 KSPIHGBHKVISFI-UHFFFAOYSA-N 0.000 description 1
- KYKQHSMYWLWROM-UHFFFAOYSA-N ac1l4yjn Chemical compound [Hg].[Hg] KYKQHSMYWLWROM-UHFFFAOYSA-N 0.000 description 1
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- LLYOXZQVOKALCD-UHFFFAOYSA-N chembl1400298 Chemical compound OC1=CC=C2C=CC=CC2=C1N=NC1=CC=CC=N1 LLYOXZQVOKALCD-UHFFFAOYSA-N 0.000 description 1
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- JGUQDUKBUKFFRO-CIIODKQPSA-N dimethylglyoxime Chemical compound O/N=C(/C)\C(\C)=N\O JGUQDUKBUKFFRO-CIIODKQPSA-N 0.000 description 1
- OAEGRYMCJYIXQT-UHFFFAOYSA-N dithiooxamide Chemical compound NC(=S)C(N)=S OAEGRYMCJYIXQT-UHFFFAOYSA-N 0.000 description 1
- QNDQILQPPKQROV-UHFFFAOYSA-N dizinc Chemical compound [Zn]=[Zn] QNDQILQPPKQROV-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
도 2는 도 1a의 고속 스크리닝 분석 시스템(100)의 예시적인 치수를 나타낸다.
도 3은 유기 리간드 12 종류가 각각 코팅된 반응 물질 코팅부(130)를 포함하는 고속 스크리닝 분석 시스템(100)의 일 실시형태를 도시한다.
도 4a 내지 도 4d는, 도 3의 고속 스크리닝 분석 시스템(100)에 니켈(Nickel), 구리(Copper), 철(Iron), 아연(Zinc), 수은(Mercury), 납(Lead), 크롬(Chrome), 카드뮴(Cadmium), 코발트(Cobalt), 망간(Manganese), 은(Silver), 비소(Arsenic)를 각각 포함한 시료를 주입한 경우의 유기 리간드와 중금속 이온과의 반응성을 스크리닝한 실험예들을 각각 도시한다.
도 5는 도 3의 고속 스크리닝 분석 시스템(100)에, 상기 12 종의 중금속 중에서 복수 개의 종류의 중금속이 포함된 시료를 주입한 경우의, 유기 리간드와 중금속 이온과의 반응성을 스크리닝한 실험예를 도시한다.
도 6a 및 도 6b은 종래기술에 따른 12 종의 중금속의 검출 반응을 위한 [표 1]의 킬레이트제가 도포된 검출부들에서, 12 종의 중금속의 반응 전의 검출부를 나타내고(도 6a) 12 종의 중금속 반응 후의 검출부를 나타낸다(도 6b).
| 반응 물질 코팅부(130)의 번호 |
킬레이트제(Chelating agent) (농도) |
| 1 | DMG(100mM) |
| 2 | Bphen (10mM) |
| 3 | DTO (50mM) |
| 4 | DTZ (50mM) |
| 5 | DCB (100mM) |
| 6 | PAN (10mM) |
| 7 | EBT (50mM) |
| 8 | 4-APT (100mM) |
| 9 | BCP (10mM) |
| 10 | PAN(10mM) /DCB (100mM) |
| 11 | DCB(100mM) /BCP (10mM) |
| 12 | PAN(10mM) /4-APT (100mM) |
110: 시료 주입부
120: 제 1 미세 유로 채널
121: 마이크로필러
130: 반응 물질 코팅부
140: 흡수부
150: 제 2 미세 유로 채널
151: 마이크로필러
Claims (6)
- 시료가 도입되는 시료 주입부;
상기 시료 주입부를 중심으로 방사형으로 배치되고 상기 시료와 반응할 수 있는 물질이 코팅된 복수 개의 반응 물질 코팅부들;
상기 시료 주입부와 상기 복수 개의 반응 물질 코팅부들을 연결하는 복수 개의 제 1 미세 유로 채널들로서, 상기 제 1 미세 유로 채널들 각각은 상기 반응 물질 코팅부들 각각에 연결되는, 상기 제 1 미세 유로 채널들;
상기 반응 물질 코팅부들과 연결되고 상기 반응 물질 코팅부들에서 반응하고 남은 시료들이 흡수되는 흡수부; 및
상기 복수 개의 반응 물질 코팅부들과 상기 흡수부를 연결하는 복수 개의 제 2 미세 유로 채널들로서, 상기 제 2 미세 유로 채널들 각각은 상기 반응 물질 코팅부들 각각에 연결되는, 상기 제 2 미세 유로 채널들을 포함하고,
판상형 재료 상에 상기 시료 주입부, 상기 반응 물질 코팅부들, 상기 제 1 미세 유로 채널들, 및 상기 흡수부를 제외한 부분이 소수성(hydrophobic)의 왁스(wax)로 코팅되는 방식으로 제조되며,
상기 흡수부는 상기 판상형 재료 상의 가장자리에 위치하고,
상기 제 1 미세 유로 채널들 및 상기 제 2 미세 유로 채널들 각각은 마이크로필러(micropillar) 구조를 가지며,
상기 마이크로필러 구조는 왁스로 패터닝되고 규칙적인 배열을 갖는 도트(dot)로 이루어지는, 고속 스크리닝 분석 시스템. - 삭제
- 삭제
- 제 1 항에 있어서,
상기 고속 스크리닝 분석 시스템은, 친수성의 원판형 재료에 왁스를 패터닝하여 제조되고,
상기 친수성의 원판형 재료의 중심부에 상기 시료 주입부가 위치하고, 상기 시료 주입부를 중심으로 제 1 미세 유체 유로, 반응 물질 코팅부, 및 제 2 미세 유로 채널의 쌍이 각각 방사형으로 배치되고,
상기 친수성의 원판형 재료의 가장자리는 흡수부를 이루는, 고속 스크리닝 분석 시스템. - 제 4 항에 있어서,
상기 친수성의 원판형 재료는 종이이고,
상기 고속 스크리닝 분석 시스템은, 원판형의 왁스가 패터닝된 종이에 150℃의 온도를 50초 동안 가하여 제조되는, 고속 스크리닝 분석 시스템. - 제 1 항에 있어서,
상기 반응 물질 코팅부들 각각은 니켈(Nickel), 구리(Copper), 철(Iron), 아연(Zinc), 수은(Mercury), 납(Lead), 크롬(Chrome), 카드뮴(Cadmium), 코발트(Cobalt), 망간(Manganese), 은(Silver), 비소(Arsenic)로 이루어진 그룹에서 선택된 적어도 어느 하나를 각각 검출할 수 있는, 고속 스크리닝 분석 시스템.
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| KR1020180102650A KR102401909B1 (ko) | 2018-08-30 | 2018-08-30 | 반응 최적화를 위한 고속 스크리닝 분석 시스템 |
| EP19853949.6A EP3698873B1 (en) | 2018-08-30 | 2019-08-29 | High-speed screening and analysis system for reaction optimization |
| CN201980005808.XA CN111372685A (zh) | 2018-08-30 | 2019-08-29 | 用于反应优化的高速筛选分析系统 |
| PCT/KR2019/011045 WO2020046006A1 (ko) | 2018-08-30 | 2019-08-29 | 반응 최적화를 위한 고속 스크리닝 분석 시스템 |
| JP2020527956A JP7020611B2 (ja) | 2018-08-30 | 2019-08-29 | 反応最適化のための高速スクリーニング分析システム |
| US16/772,472 US12128400B2 (en) | 2018-08-30 | 2019-08-29 | High-speed screening and analysis system for reaction optimization |
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| US12128400B2 (en) | 2024-10-29 |
| EP3698873A4 (en) | 2021-01-13 |
| JP7020611B2 (ja) | 2022-02-16 |
| EP3698873B1 (en) | 2024-10-02 |
| CN111372685A (zh) | 2020-07-03 |
| US20200398270A1 (en) | 2020-12-24 |
| WO2020046006A1 (ko) | 2020-03-05 |
| EP3698873A1 (en) | 2020-08-26 |
| KR20200025388A (ko) | 2020-03-10 |
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