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KR102373619B1 - 자체-열중성자화 및 자체-국소화를 모두 지원하는 저차원 재료들의 공정 및 제조 - Google Patents

자체-열중성자화 및 자체-국소화를 모두 지원하는 저차원 재료들의 공정 및 제조 Download PDF

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KR102373619B1
KR102373619B1 KR1020197018946A KR20197018946A KR102373619B1 KR 102373619 B1 KR102373619 B1 KR 102373619B1 KR 1020197018946 A KR1020197018946 A KR 1020197018946A KR 20197018946 A KR20197018946 A KR 20197018946A KR 102373619 B1 KR102373619 B1 KR 102373619B1
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boron
oxysilaborane
conductor
picocrystalline
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KR20190126765A (ko
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패트릭 커란
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세미누클리어 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
    • H01L49/006—
    • H01L29/267—
    • H01L29/861—
    • H01L35/22—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Silicon Compounds (AREA)
  • Particle Accelerators (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
KR1020197018946A 2017-03-15 2017-11-30 자체-열중성자화 및 자체-국소화를 모두 지원하는 저차원 재료들의 공정 및 제조 Active KR102373619B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762471815P 2017-03-15 2017-03-15
US62/471,815 2017-03-15
US201762591848P 2017-11-29 2017-11-29
US62/591,848 2017-11-29
PCT/US2017/064020 WO2018164746A2 (fr) 2016-11-29 2017-11-30 Traitement et fabrication de matériaux de faibles dimensions supportant à la fois l'auto-thermalisation et l'auto-localisation

Publications (2)

Publication Number Publication Date
KR20190126765A KR20190126765A (ko) 2019-11-12
KR102373619B1 true KR102373619B1 (ko) 2022-03-15

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Country Status (7)

Country Link
EP (1) EP3549155A4 (fr)
JP (1) JP7250340B2 (fr)
KR (1) KR102373619B1 (fr)
CN (1) CN110431652B (fr)
CA (1) CA3045318A1 (fr)
IL (1) IL266966B2 (fr)
WO (1) WO2018164746A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11220747B2 (en) * 2018-10-29 2022-01-11 Applied Materials, Inc. Complementary pattern station designs
CN111470577A (zh) * 2020-04-15 2020-07-31 苏州正奥水生态技术研究有限公司 一种污水处理光量子载体及其制备方法和使用方法
CN115903279B (zh) * 2022-10-12 2023-10-03 北京大学 一种基于同位素工程进行光谱发射率调控的方法及其应用

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160351286A1 (en) 2015-05-28 2016-12-01 SemiNuclear, Inc. Composition and method for making picocrystalline artificial carbon atoms

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US3432539A (en) * 1965-06-30 1969-03-11 Du Pont Icosahedral dodecahydrododecaborane derivatives and their preparation
US4818625A (en) * 1985-06-24 1989-04-04 Lockheed Missiles & Space Company, Inc. Boron-silicon-hydrogen alloy films
US5872368A (en) * 1995-11-30 1999-02-16 The United States Of America As Represented By The Secretary Of The Navy Method of controlling a super conductor
US6025611A (en) * 1996-09-20 2000-02-15 The Board Of Regents Of The University Of Nebraska Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
US6479919B1 (en) * 2001-04-09 2002-11-12 Terrence L. Aselage Beta cell device using icosahedral boride compounds
JP2004123720A (ja) * 2002-09-11 2004-04-22 Sony Corp 分子素子、分子組織体、整流素子、整流方法、センサ素子、スイッチ素子、回路素子、論理回路素子、演算素子および情報処理素子
KR100683401B1 (ko) * 2005-08-11 2007-02-15 동부일렉트로닉스 주식회사 에피층을 이용한 반도체 장치 및 그 제조방법
US7795735B2 (en) * 2007-03-21 2010-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for forming single dies with multi-layer interconnect structures and structures formed therefrom
US7915643B2 (en) * 2007-09-17 2011-03-29 Transphorm Inc. Enhancement mode gallium nitride power devices
US8779462B2 (en) * 2008-05-19 2014-07-15 Infineon Technologies Ag High-ohmic semiconductor substrate and a method of manufacturing the same
US20100313952A1 (en) * 2009-06-10 2010-12-16 Thinsilicion Corporation Photovoltaic modules and methods of manufacturing photovoltaic modules having multiple semiconductor layer stacks
US8344337B2 (en) * 2010-04-21 2013-01-01 Axcelis Technologies, Inc. Silaborane implantation processes
KR101396432B1 (ko) * 2012-08-02 2014-05-21 경희대학교 산학협력단 반도체 소자 및 그의 제조 방법
WO2015186625A1 (fr) * 2014-06-03 2015-12-10 株式会社日本製鋼所 Procédé de fabrication d'un semi-conducteur présentant une couche de getter, procédé de fabrication de dispositif à semi-conducteurs et dispositif à semi-conducteurs
US9972489B2 (en) * 2015-05-28 2018-05-15 SemiNuclear, Inc. Composition and method for making picocrystalline artificial borane atoms

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160351286A1 (en) 2015-05-28 2016-12-01 SemiNuclear, Inc. Composition and method for making picocrystalline artificial carbon atoms

Also Published As

Publication number Publication date
CN110431652B (zh) 2023-12-29
IL266966B2 (en) 2024-03-01
CN110431652A (zh) 2019-11-08
JP7250340B2 (ja) 2023-04-03
IL266966A (en) 2019-07-31
WO2018164746A2 (fr) 2018-09-13
CA3045318A1 (fr) 2018-09-13
JP2020515057A (ja) 2020-05-21
EP3549155A4 (fr) 2020-09-30
WO2018164746A3 (fr) 2018-12-06
KR20190126765A (ko) 2019-11-12
EP3549155A2 (fr) 2019-10-09
IL266966B1 (en) 2023-11-01

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