KR102317815B1 - Method of modifying the surface of polymer pattern - Google Patents

Abstract

A method for surface modification of a polymer pattern is provided. The method for modifying the surface of the high bonsai pattern includes preparing a substrate on which a polymer pattern is formed in a chamber, providing a source gas on the pattern, and exposing the pattern to the source gas to introduce the source gas into the surface of the pattern. It may include a first exposure step of permeating, providing a reaction gas on the pattern, and a second exposure step of modifying the surface of the pattern by exposing the pattern to the reaction gas.

Description

Method of modifying the surface of polymer pattern {Method of modifying the surface of polymer pattern}

The present invention relates to a method for modifying the surface of a polymer pattern, and more particularly, to a method for modifying the surface of a polymer pattern by alternately providing a source gas and a reaction gas on the polymer pattern to selectively modify the surface of the polymer pattern.

Polymer thin film is being used in various fields such as medical field, insulating material, electrical material, packaging material, optics and fluid device due to advantages such as low production cost, high ductility, excellent optical transparency and mechanical properties. Most polymer thin films are hydrophobic because they have hydrocarbons as a basic component. This is a cause of weak wettability and adhesiveness, and there are many difficulties in its application. So far, studies for surface modification of various polymer thin films have been conducted. Surface modification is to change the polarity of the surface of a material to have hydrophilicity or hydrophobicity, and a surface having a hydrophilic property has a high surface energy, so it has an advantage of excellent adhesion during bonding or coating with other materials.

Conventionally, a gas-phase processing or a wet chemical method is used to modify the surface of a polymer thin film to be hydrophilic. In particular, a shadow mask and plasma were used to selectively modify the polymer thin film. In general, when plasma is irradiated to the surface of a polymer, the plasma causes a chemical reaction with oxygen atoms in addition to the ion bombardment effect and generates functional groups such as polymer-OH to modify the surface. On the other hand, where the polymer substrate is masked using a shadow mask, there is no ion bombardment effect and no reaction with oxygen atoms, so surface modification is not performed.

However, the method for modifying the surface of a polymer using plasma has a disadvantage in that only different polymers cannot be selectively modified when there are different polymers. As an alternative, a method of protecting an area that is not to be modified using a shadow mask has been reported, but since the size of each pattern is about several tens of um, the shadow mask has a disadvantage that it is difficult to apply to the technology that is being integrated and refined. Accordingly, various technologies for a method of easily modifying the surface of a polymer thin film to be hydrophilic are continuously being researched and developed.

One technical problem to be solved by the present invention is to provide a method for modifying the surface of a polymer pattern capable of modifying the surface of the polymer pattern through a simple process.

Another technical problem to be solved by the present invention is to provide a method for modifying the surface of a polymer pattern that can selectively modify the surface of at least one of a plurality of polymer patterns with a simple process.

Another technical problem to be solved by the present invention is to provide a method for modifying the surface of a polymer pattern that can be processed even at a low temperature.

The technical problem to be solved by the present invention is not limited to the above.

In order to solve the above-described technical problems, the present invention provides a method for modifying the surface of a polymer pattern.

According to an embodiment, the method for modifying the surface of the polymer pattern includes preparing a substrate on which a pattern including a polymer is formed in a chamber, in a state in which the outlet of the chamber is sealed, for depositing a metal oxide on the pattern, a source A first exposure step of providing a gas, exposing the pattern to the source gas for a predetermined time while sealing the inlet and outlet of the chamber, thereby penetrating the source gas into the surface of the pattern , after the first exposure step, a first purge step of purging with the inlet and outlet of the chamber open, providing a reaction gas on the pattern with the outlet of the chamber closed again, the A second exposure step of modifying the surface of the pattern by exposing the pattern to the reaction gas for a predetermined time while sealing the inlet and outlet of the chamber, and after the second exposure step, the chamber It may include a second purge step of purging in a state in which the inlet and outlet of the

According to an embodiment, the source gas providing step, the first exposing step, the first purge step, the reactive gas providing step, the second exposing step, and the second purge step are one unit process (unit process) ), and the unit process may include repeating a plurality of times.

According to an embodiment, the method for surface modification of the polymer pattern may include controlling the surface modification state of the pattern according to the number of repetitions of the unit process.

According to an embodiment, the method for modifying the surface of the polymer pattern may include increasing the hydrophilicity of the surface of the pattern as the number of repetitions of the unit process increases.

According to an embodiment, the polymer may include any one of polyethyleneterephtalate (PET) and polystyrene (PS).

According to an embodiment, the source gas may include trimethyl aluminum (TMA), and the reaction gas may include H ₂ O.

According to another embodiment, the method for modifying the surface of the polymer pattern includes preparing a substrate on which a first pattern including a first polymer and a second pattern including a second polymer different from the first polymer is formed in a chamber; providing a source gas for metal oxide deposition on the first pattern and the second pattern in a state in which the outlet of the chamber is sealed; A first exposure step of exposing a second pattern to the source gas for a predetermined time to infiltrate the source gas into the surface of the first pattern and the surface of the second pattern, after the first exposure step, the A first purging step of purging with the inlet and the outlet of the chamber open, providing a reaction gas on the first pattern and the second pattern with the outlet of the chamber closed again, the inlet of the chamber and a second exposure step of exposing the first pattern and the second pattern to the reaction gas for a predetermined time in a state in which the outlet is sealed, and after the second exposure step, the inlet and the outlet of the chamber In the opened state, a second purge step of purging may be included.

According to another embodiment, the source gas providing step, the first exposing step, the first purging step, the reactive gas providing step, the second exposing step, and the second purge step may be performed in one unit process. ), and the unit process may include repeating a plurality of times.

According to another embodiment, the method of modifying the surface of the polymer pattern may include selectively modifying the surface of any one of the first pattern and the second pattern according to the number of repetitions of the unit process.

According to another embodiment, the method for modifying the surface of the polymer pattern may include modifying both the surface of the first pattern and the surface of the second pattern when the number of repetitions of the unit process exceeds a reference number. .

The method for surface modification of a polymer pattern according to an embodiment of the present invention comprises the steps of preparing a substrate on which a first pattern including a first polymer and a second pattern including a second polymer different from the first polymer is formed in a chamber; providing a source gas for metal oxide deposition on the first pattern and the second pattern in a state in which the outlet of the chamber is sealed; A first exposure step of exposing a second pattern to the source gas for a predetermined time to infiltrate the source gas into the surface of the first pattern and the surface of the second pattern, after the first exposure step, the A first purging step of purging with the inlet and the outlet of the chamber open, providing a reaction gas on the first pattern and the second pattern with the outlet of the chamber closed again, the inlet of the chamber and a second exposure step of exposing the first pattern and the second pattern to the reaction gas for a predetermined time in a state in which the outlet is sealed, and after the second exposure step, the inlet and the outlet of the chamber In the opened state, a second purge step of purging may be included.

In addition, the method for modifying the surface of the polymer pattern according to the second embodiment includes the source gas providing step, the first exposing step, the first purging step, the reactive gas providing step, the second exposing step, and the second The purge step constitutes one unit process, and the unit process may be repeatedly performed a plurality of times. Accordingly, a method for surface modification of a polymer pattern capable of selectively modifying the surface of at least one of a plurality of polymer patterns may be provided.

1 is a flowchart illustrating a method for surface modification of a polymer pattern according to a first embodiment of the present invention.
2 to 4 are views showing a surface modification process of the polymer pattern according to the first embodiment of the present invention.
5 is a flowchart illustrating a method for surface modification of a polymer pattern according to a second embodiment of the present invention.
6 to 8 are views illustrating a surface modification process of a polymer pattern according to a second embodiment of the present invention.
9 and 10 are photographs showing selective surface modification according to the number of repetitions of the unit process in the method for surface modification of a polymer pattern according to the second embodiment of the present invention.
11 and 12 are graphs comparing the degree of surface modification according to the type of polymer in the method for surface modification of a polymer pattern according to the second embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical spirit of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosed content may be thorough and complete, and the spirit of the present invention may be sufficiently conveyed to those skilled in the art.

In this specification, when a component is referred to as being on another component, it means that it may be directly formed on the other component or a third component may be interposed therebetween. In addition, in the drawings, thicknesses of films and regions are exaggerated for effective description of technical content.

In addition, in various embodiments of the present specification, terms such as first, second, third, etc. are used to describe various components, but these components should not be limited by these terms. These terms are only used to distinguish one component from another. Accordingly, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment. Each embodiment described and illustrated herein also includes a complementary embodiment thereof. In addition, in the present specification, 'and/or' is used to mean including at least one of the elements listed before and after.

In the specification, the singular expression includes the plural expression unless the context clearly dictates otherwise. In addition, terms such as "comprise" or "have" are intended to designate that a feature, number, step, element, or a combination thereof described in the specification is present, and one or more other features, numbers, steps, configuration It should not be construed as excluding the possibility of the presence or addition of elements or combinations thereof. Also, in the present specification, the term “connection” is used to include both indirectly connecting a plurality of components and directly connecting a plurality of components.

In addition, in the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted.

1 is a flowchart illustrating a method for surface-modifying a polymer pattern according to a first embodiment of the present invention, and FIGS. 2 to 4 are views illustrating a surface-modifying process for a polymer pattern according to a first embodiment of the present invention.

Referring to FIG. 1 , in the method for surface-modifying a polymer pattern according to the first embodiment, preparing a substrate 100 on which a pattern 110 is formed in a chamber 10 ( S110 ), and providing a source gas ( S120 ) ), a first exposure step ( S130 ), a first purge step ( S140 ), a reaction gas providing step ( S150 ), a second exposure step ( S160 ), and a second purge step ( S170 ) may be included. Hereinafter, each step will be described in detail.

1 and 2 , in step S110 , the substrate 100 on which the pattern 110 is formed may be prepared in the chamber 10 . According to an embodiment, the pattern 110 may include a polymer. For example, the polymer may include any one of polyethyleneterephtalate (PET) and polystyrene (PS). The shape of the pattern 110 is not particularly limited, and various shapes of the pattern 110 may be prepared according to a user's selection.

1 and 3 , in step S120 , in a state in which the outlet 10b of the chamber 10 is sealed, a source gas SG for depositing a metal oxide on the pattern 110 is provided. can According to an embodiment, the source gas SG may include a metal precursor MP. For example, the source gas SG may include trimethyl aluminum (TMA). In addition, the source gas SG may be provided for a time of 20 seconds.

As the source gas SG is provided into the chamber 10 while the outlet 10b of the chamber 10 is sealed, the pressure inside the chamber 10 may increase. For example, in step S120 , the pressure in the chamber 10 may be increased to 0.5 torr by the source gas SG.

In step S130 , the pattern 110 may be exposed to the source gas SG for a predetermined time while the inlet 10a and the outlet 10b of the chamber 10 are sealed. . As the inlet 10a and the outlet 10b of the chamber 10 are sealed, the pressure in the chamber 10 increased in step S120 may be maintained. Accordingly, the pattern 110 may be exposed to the source gas SG for a predetermined time in the chamber 10 in a high pressure state. For example, the exposure time for the pattern 110 to the source gas SG may be 50 seconds.

When the pattern 110 is exposed to the source gas SG for a predetermined time in the chamber 10 in a high pressure state, the source gas may permeate into the surface of the pattern 110 . Specifically, the source gas SG penetrates into the surface of the pattern 110 by the pressure inside the chamber, and the penetrated source gas SG diffuses into the surface of the pattern 110 , and the pattern 110 . (110) may be adsorbed to the surface. In addition, as the pattern 110 is exposed to the source gas SG for a predetermined time in the chamber 10 in a high pressure state, even in a low-temperature environment, the source gas SG is It has the advantage of being able to penetrate the surface.

In step S140 , after step S130 , the pattern 110 may be purged in a state in which the inlet 10a and the outlet 10b of the chamber 10 are opened. Accordingly, the metal precursor MP that is not adsorbed to the surface of the pattern 110 may be removed. According to an embodiment, the step S140 may be performed by providing an inert gas for a predetermined time. For example, the inert gas may be argon (Ar) or nitrogen (N ₂ ) gas. For example, the inert gas may be provided for a time of 100 seconds. In addition, as the inlet 10a and the outlet 10b of the chamber 10 are opened in step S140 , compared to the pressure inside the chamber 10 in step S130 , the pressure may be lowered.

1 and 4 , in step S150 , a reaction gas RG may be provided on the pattern 110 while the outlet 10b of the chamber 10 is closed again. According to an embodiment, the reaction gas RG may include H ₂ O(W). For example, the reaction gas RG may be provided for a time of 20 seconds.

As the reaction gas RG is provided into the chamber 10 while the outlet 10b of the chamber 10 is sealed, the pressure inside the chamber 10 may increase. For example, in the step S150, the pressure in the chamber 10 may be increased to 0.5 torr by the reaction gas RG.

In step S160 , the pattern 110 may be exposed to the reaction gas RG for a predetermined time while the inlet 10a and the outlet 10b of the chamber 10 are sealed. As the inlet 10a and the outlet 10b of the chamber 10 are sealed, the pressure in the chamber 10 increased in step S150 may be maintained. Accordingly, the pattern 110 may be exposed to the reaction gas RG in the chamber 10 under high pressure for a predetermined time. For example, the exposure time for the pattern 110 to the reaction gas RG may be 50 seconds.

When the pattern 110 is exposed to the reaction gas RG for a predetermined time in the chamber 10 under high pressure, the source of the reaction gas RG is adsorbed to the surface of the pattern 110 . It can react with gas (SG). That is, the metal precursor MP adsorbed on the surface of the pattern 110 _{may react with the H 2} O(W). Accordingly, the surface of the pattern 110 may be reformed. Specifically, when the pattern 110 contains a polymer such as PET (polyethyleneterephtalate) and PS (polystyrene) and exhibits hydrophobic properties, a TMA source gas (SG) and H ₂ O reaction gas are formed on the pattern 110 . (RG) is provided, so that the surface of the pattern 110 may be modified to be hydrophilic.

In the step S170 , after the step S160 , the pattern 110 may be purged while the inlet 10a and the outlet 10b of the chamber 10 are opened. _{Accordingly, the H 2} O(W) that did not react with the metal precursor MP adsorbed on the surface of the pattern 110 may be removed. According to an embodiment, the step S170 may be performed by providing an inert gas for a predetermined time. For example, the inert gas may be argon (Ar) or nitrogen (N ₂ ) gas. For example, the inert gas may be provided for a time of 100 seconds. In addition, as the inlet 10a and the outlet 10b of the chamber 10 are opened in step S170 , compared to the pressure inside the chamber 10 in step S160 , the pressure may be lowered.

According to an embodiment, the source gas providing step (S120), the first exposing step (S130), the first purging step (S140), the reactive gas providing step (S150), and the second exposing step (S160) , and the second purge step ( S170 ) may form one unit process. The unit process is summarized in <Table 1> below.

division material provided serving time Step of providing source gas Source Gas (TMA) 20s first exposure stage Source Gas (TMA) 50s first purge step Inert gas (N ₂ ) 100s Step of providing reaction gas Reactive gas (H ₂ O) 20s second exposure stage Reactive gas (H ₂ O) 50s second purge step Inert gas (N ₂ ) 100s

According to an embodiment, the unit process may be repeated a plurality of times. In addition, the surface modification state of the pattern 110 may be controlled according to the number of repetitions of the unit process. Specifically, as the number of repetitions of the unit process increases, the surface of the pattern 110 may have increased hydrophilicity. For example, when the pattern 110 includes a polymer such as polyethyleneterephtalate (PET) and polystyrene (PS), as the number of repetitions of the unit process increases, a contact angle may decrease. As a result, the method for modifying the surface of the polymer pattern according to the first embodiment is a simple method of controlling the number of repetitions of the unit process, and it is possible to easily modify the surface of the polymer pattern.

As described above, the method for modifying the surface of the polymer pattern according to the first embodiment of the present invention has been described. Hereinafter, when there is a plurality of polymer patterns, a method for surface modification of a polymer pattern according to a second embodiment of the present invention capable of selectively surface-modifying at least one of the plurality of polymer patterns is shown in FIGS. 5 to 8 . is explained by

5 is a flowchart illustrating a method for surface-modifying a polymer pattern according to a second embodiment of the present invention, and FIGS. 6 to 8 are views illustrating a surface-modifying process for a polymer pattern according to a second embodiment of the present invention.

Referring to FIG. 5 , the method for surface modification of a polymer pattern according to the second embodiment includes the steps of preparing a substrate 100 on which a first pattern 110 and a second pattern 120 are formed in a chamber 10 ( S210), a source gas providing step S220, a first exposing step S230, a first purge step S240, a reactive gas providing step S250, a second exposure step S260, and a second purge step S270 ) may be included. Hereinafter, each step will be described in detail.

5 and 6 , in step S210 , the substrate 100 on which the first pattern 110 and the second pattern 120 are formed may be prepared in the chamber 10 . According to an embodiment, the first pattern 110 may include a first polymer, and the second pattern 120 may include a second polymer. According to an embodiment, the first polymer and the second polymer may be different from each other. For example, the first polymer may be polyethyleneterephtalate (PET), and the second polymer may be polystyrene (PS). There is no particular limitation on the shapes of the first pattern 110 and the second pattern 120 , and various shapes of the first pattern 110 and the second pattern 120 may be prepared according to a user's selection.

5 and 7 , in step S220, metal oxide deposition is performed on the first pattern 110 and the second pattern 120 in a state in which the outlet 10b of the chamber 10 is sealed. A source gas SG may be provided for According to an embodiment, the source gas SG may include a metal precursor MP. For example, the source gas SG may include trimethyl aluminum (TMA). In addition, the source gas SG may be provided for a time of 20 seconds.

As the source gas SG is provided into the chamber 10 while the outlet 10b of the chamber 10 is sealed, the pressure inside the chamber 10 may increase. For example, in step S220 , the pressure in the chamber 10 may be increased to 0.5 torr by the source gas SG.

In step S230, in a state in which the inlet 10a and the outlet 10b of the chamber 10 are sealed, the first pattern 110 and the second pattern 120 are applied to the source gas SG in a predetermined manner. It can be exposed over time. As the inlet 10a and the outlet 10b of the chamber 10 are sealed, the pressure in the chamber 10 increased in step S220 may be maintained. Accordingly, the first pattern 110 and the second pattern 120 may be exposed to the source gas SG for a predetermined time in the chamber 10 in a high pressure state. For example, the exposure time for the first pattern 110 and the second pattern 120 to the source gas SG may be 50 seconds. In step S230 , the source gas SG may penetrate into the surfaces of the first pattern 110 and the second pattern 120 . The process in which the source gas SG penetrates is one of the method for surface modification of the polymer pattern according to the first embodiment described with reference to FIGS. 1 to 4 , wherein the source gas SG enters the surface of the pattern 110 . It can be the same as the infiltration process. Accordingly, a detailed description is omitted.

In the step S240, after the step S230, in a state in which the inlet 10a and the outlet 10b of the chamber 10 are opened, the first pattern 110 and the second pattern 120 are purged. can Accordingly, the metal precursors MP that are not adsorbed to the surfaces of the first pattern 110 and the second pattern 120 may be removed. According to an embodiment, the step S240 may be performed by providing an inert gas for a predetermined time. For example, the inert gas may be argon (Ar) or nitrogen (N ₂ ) gas. For example, the inert gas may be provided for a time of 100 seconds. In addition, as the inlet 10a and the outlet 10b of the chamber 10 are opened in step S240 , compared to the pressure inside the chamber 10 in step S230 , the pressure may be lowered.

5 and 8 , in step S250 , in the state in which the outlet 10b of the chamber 10 is closed again, the reaction gas RG is formed on the first pattern 110 and the second pattern 120 . ) can be provided. According to an embodiment, the reaction gas RG may include H ₂ O(W). For example, the reaction gas RG may be provided for a time of 20 seconds.

As the reaction gas RG is provided into the chamber 10 while the outlet 10b of the chamber 10 is sealed, the pressure inside the chamber 10 may increase. For example, in step S250, the pressure in the chamber 10 may be increased to 0.5 torr by the reaction gas RG.

In step S260, the first pattern 110 and the second pattern 120 are applied to the reaction gas RG for a predetermined time while the inlet 10a and the outlet 10b of the chamber 10 are sealed. can be exposed during As the inlet 10a and the outlet 10b of the chamber 10 are closed, the pressure in the chamber 10 increased in step S250 may be maintained. Accordingly, the first pattern 110 and the second pattern 120 may be exposed to the reaction gas RG in the chamber 10 under high pressure for a predetermined time. For example, the exposure time for the first pattern 110 and the second pattern 120 to the reaction gas RG may be 50 seconds.

When the first pattern 110 and the second pattern 120 are exposed to the reaction gas RG for a predetermined time in the chamber 10 in a high pressure state, the reaction gas RG becomes the first It may react with the source gas SG adsorbed on the surfaces of the pattern 110 and the second pattern 120 . That is, the metal precursor MP adsorbed on the surfaces of the first pattern 110 and the second pattern 120 _{may react with the H 2} O(W). Accordingly, the surfaces of the first pattern 110 and the second pattern 120 may be reformed. Specifically, when the first pattern 110 and the second pattern 120 contain a polymer such as PET (polyethyleneterephtalate) and PS (polystyrene) to exhibit hydrophobic properties, the first pattern 110 and the second pattern 120 The TMA source gas SG and the H ₂ O reaction gas RG are provided on the pattern 120 , so that the surfaces of the first pattern 110 and the second pattern 120 may be modified to be hydrophilic.

In the step S270, after the step S260, the first pattern 110 and the second pattern 120 are purged with the inlet 10a and the outlet 10b of the chamber 10 open. can _{Accordingly, the H 2} O(W) that did not react with the metal precursor MP adsorbed on the surfaces of the first pattern 110 and the second pattern 120 may be removed. According to an embodiment, the step S270 may be performed by providing an inert gas for a predetermined time. For example, the inert gas may be argon (Ar) or nitrogen (N ₂ ) gas. For example, the inert gas may be provided for a time of 100 seconds. In addition, as the inlet 10a and the outlet 10b of the chamber 10 are opened in step S270 , compared to the pressure inside the chamber 10 in step S260 , the pressure may be lowered.

According to an embodiment, the source gas providing step (S220), the first exposing step (S230), the first purging step (S240), the reactive gas providing step (S250), the second exposing step (S260) , and the second purge step ( S270 ) may form one unit process. That is, the unit process may be as shown in Table 1 above.

According to an embodiment, the unit process may be repeated a plurality of times. In addition, the surface of any one of the first pattern 110 and the second pattern 120 may be selectively modified according to the number of repetitions of the unit process. Alternatively, the surfaces of both the first pattern 110 and the second pattern 120 may be modified according to the number of repetitions of the unit process.

For example, when the number of repetitions of the unit process exceeds the reference number, both the surface of the first pattern 110 and the surface of the second pattern 120 may be modified. On the other hand, when the number of repetitions of the unit process is less than or equal to the reference number, the surface of the first pattern 110 may be modified and the surface of the second pattern 120 may not be modified. Specifically, when the first pattern 110 includes PET and the second pattern 120 includes PS, the number of repetitions of the unit process is performed 10 times so that the surface of the first pattern 110 is It may be modified to be hydrophilic, and the surface of the second pattern 120 may not be modified. On the other hand, by repeating the unit process 20 times, both the surface of the first pattern 110 and the surface of the second pattern 120 may be modified to be hydrophilic. That is, the surface modification method of the polymer pattern according to the second embodiment is a simple method of controlling the number of repetitions of the unit process according to the type of polymer included in the first pattern 110 and the second pattern 120 . As a method, the surface of any one of the plurality of polymer patterns may be selectively modified.

According to an embodiment, the method for modifying the surface of the polymer pattern according to the second embodiment may be performed based on a data base (DB). The data base is the unit process for modifying the surfaces of the first pattern 110 and the second pattern 120 according to the type of polymer included in the first pattern 110 and the second pattern 120 . The number of repetitions of may be recorded data. That is, the method for modifying the surface of the polymer pattern according to the second embodiment is a simple method of controlling the number of unit processes based on the database, and selectively modifies the surface of any one of the plurality of polymer patterns. can do it

The method for modifying the surface of a polymer pattern according to a second embodiment of the present invention includes the first pattern 110 including a first polymer, and the second pattern 120 including a second polymer different from the first polymer. Preparing the formed substrate 100 in the chamber 10 , in a state in which the outlet 10b of the chamber 10 is sealed, on the first pattern 110 and the second pattern 120 . The step of providing the source gas SG for metal oxide deposition, the first pattern 110 and the second pattern ( 120 ) by exposing to the source gas SG for a predetermined time to allow the source gas SG to permeate into the surface of the first pattern 110 and the surface of the second pattern 120 . After the exposure step and the first exposure step, the first purge step of purging with the inlet 10a and the outlet 10b of the chamber 10 open, and the outlet 10a of the chamber 10 again In the sealed state, providing the reaction gas RG on the first pattern 110 and the second pattern 120, sealing the inlet 10a and the outlet 10b of the chamber 10 In the state, a second exposure step of exposing the first pattern 110 and the second pattern 120 to the reaction gas RG for a predetermined time, and after the second exposure step, the chamber ( 10) may include a second purging step of purging with the inlet 10a and the outlet 10b open.

In addition, the method for modifying the surface of the polymer pattern according to the second embodiment includes the step of providing the source gas (SG), the first exposure step, the first purge step, the step of providing the reaction gas (RG), and the second exposure. The step and the second purge step may constitute one unit process, and the unit process may be repeatedly performed a plurality of times. Accordingly, a method for surface modification of a polymer pattern capable of selectively modifying the surface of at least one of a plurality of polymer patterns may be provided.

As described above, the method for modifying the surface of the polymer pattern according to the second embodiment of the present invention has been described. Hereinafter, specific experimental examples and characteristic evaluation results of the method for surface modification of a polymer pattern according to an embodiment of the present invention will be described.

9 and 10 are photographs showing selective surface modification according to the number of repetitions of the unit process in the method for surface modification of a polymer pattern according to the second embodiment of the present invention.

9 and 10 , a substrate on which a PET (polyethyleneterephtalate) pattern and a PS (polystyrene) pattern are formed is prepared. After placing the substrate in the chamber, the surface modification method of the polymer pattern according to the second embodiment is performed, but the number of unit processes is 0 cycle, 2 cycle, 5 cycle, 10 cycle, and 20 cycle, A contact angle is indicated for each. 9 shows the contact angle of the PET pattern and FIG. 10 shows the contact angle of the PS pattern.

As can be seen in FIGS. 9 and 10 , as the number of repetitions of the unit process for both the PET pattern and the PS pattern increased, it was confirmed that the contact angle decreased. That is, the surface of both the PET pattern and the PS pattern was modified through the surface modification method of the polymer pattern according to the second embodiment, but it was found that the hydrophilicity of the surface increased as the number of repetitions of the unit process increased.

In addition, in the case of the PET pattern, the contact angle decreased sharply from cycle 5, and the surface was modified to be hydrophilic even when the number of repetitions of the unit process was small. It was confirmed that surface modification to hydrophilicity was achieved only by increasing the That is, it was found that by controlling the number of repetitions of the unit process, the surface of at least one of the plurality of polymer patterns could be selectively modified.

11 and 12 are graphs comparing the degree of surface modification according to the type of polymer among the surface modification methods of the polymer pattern according to the second embodiment of the present invention.

Referring to FIG. 11 , a substrate on which a polystyrene (PS) pattern is formed is prepared. After placing the substrate in the chamber, the surface modification method of the polymer pattern according to the second embodiment was performed, and X-ray fluorescence (XRF) measurement was performed on the surface-modified polymer pattern. Referring to FIG. 12 , a substrate on which a PET (polyethyleneterephtalate) pattern is formed is prepared. After placing the substrate in the chamber, the surface modification method of the polymer pattern according to the second embodiment was performed, and X-ray fluorescence (XRF) measurement was performed on the surface-modified polymer pattern.

11 and 12, it was confirmed that the Al peak of the surface-modified PET pattern appeared higher than the Al peak of the surface-modified PS pattern. In the method for modifying the surface of the polymer pattern according to the second embodiment, as Al2O3 is used in the surface modification process, a high Al peak means a higher degree of surface modification. Accordingly, it can be seen that in the case of the PET pattern, surface modification can be performed more easily than the PS pattern.

As mentioned above, although the present invention has been described in detail using preferred embodiments, the scope of the present invention is not limited to specific embodiments and should be construed according to the appended claims. In addition, those skilled in the art should understand that many modifications and variations are possible without departing from the scope of the present invention.

10: chamber
100: substrate
110: first pattern
120: second pattern

Claims (10)

preparing a substrate on which both a first pattern including a first hydrophobic polymer and a second pattern including a second hydrophobic polymer different from the first hydrophobic polymer are formed in a chamber;
providing a source gas for metal oxide deposition on the first pattern and the second pattern while sealing the outlet of the chamber;
In a state in which the inlet and outlet of the chamber are sealed, the first pattern and the second pattern are exposed to the source gas for a predetermined time, and the source is introduced into the surface of the first pattern and the surface of the second pattern. a first exposure step of permeating a gas and diffusing the permeated source gas into the surfaces of the patterns;
after the first exposure step, a first purge step of purging with the inlet and outlet of the chamber open;
providing a reaction gas on the first pattern and the second pattern while the outlet of the chamber is closed again;
a second exposure step of exposing both the first pattern and the second pattern to the reaction gas for a predetermined time while the inlet and outlet of the chamber are sealed; and
After the second exposure step, a second purge step of purging with the inlet and outlet of the chamber open,
The first pattern and the second pattern were both exposed to the first exposing step, the first purge step, the second exposing step, and the second purge step, but the second pattern of the first pattern and the second pattern was exposed. Only one pattern has its surface selectively modified to be hydrophilic and the surface of the second pattern maintains hydrophobicity,
The first pattern is a PET (polyethyleneterephtalate) pattern,
The second pattern is a PS (polystyrene) pattern surface modification method of a polymer pattern. According to claim 1,
The source gas providing step, the first exposing step, the first purging step, the reacting gas providing step, the second exposing step, and the second purge step constitute one unit process,
The unit process is a surface modification method of a polymer pattern comprising repeating a plurality of times.
delete According to claim 1,
The source gas includes trimethyl aluminum (TMA), and the reaction gas includes H ₂ O. A method for surface modification of a polymer pattern. delete delete delete delete delete delete

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