KR102169835B1 - 연마액, 화학적 기계적 연마 방법 - Google Patents
연마액, 화학적 기계적 연마 방법 Download PDFInfo
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- KR102169835B1 KR102169835B1 KR1020187036008A KR20187036008A KR102169835B1 KR 102169835 B1 KR102169835 B1 KR 102169835B1 KR 1020187036008 A KR1020187036008 A KR 1020187036008A KR 20187036008 A KR20187036008 A KR 20187036008A KR 102169835 B1 KR102169835 B1 KR 102169835B1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H10P52/00—
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
본 발명의 연마액은, 화학적 기계적 연마에 이용되는 연마액으로서, 지립과, 유기산과, 수용성 고분자를 함유하고, 하기 식 (1)~식 (3)을 모두 충족시킨다.
식 (1): 1.5≤η100rpm/η1000rpm≤20
식 (2): 1.2≤η100rpm/η500rpm≤10
식 (3): η100rpm/η1000rpm>η100rpm/η500rpm
식 (1)~식 (3) 중, η100rpm은, 40%RH, 23℃에 있어서 회전 점도계에 의하여 회전수 100rpm으로 측정되는 상기 연마액의 점도이고, η500rpm은, 40%RH, 23℃에 있어서 회전 점도계에 의하여 회전수 500rpm으로 측정되는 상기 연마액의 점도이며, η1000rpm은, 40%RH, 23℃에 있어서 회전 점도계에 의하여 회전수 1000rpm으로 측정되는 상기 연마액의 점도이다.
Description
도 2는, 뉴턴성을 나타내는 연마액을 이용하여 CMP를 실시한 경우에 있어서, 웨이퍼의 평면 내에 있어서의 각 위치의 연마 속도(연마량)를 나타내는 도이다.
도 3은, 1.5≤η100rpm/η1000rpm≤20의 범위에 있는 연마액을 이용하여 CMP를 실시한 경우에 있어서의, 웨이퍼의 평면 내의 각 위치에서의 연마 속도(연마량)를 나타내는 도이다.
도 4는, η100rpm/η1000rpm>20의 연마액을 이용하여 CMP를 실시한 경우에 있어서의, 웨이퍼의 평면 내의 각 위치에서의 연마 속도(연마량)를 나타내는 도이다.
2 연마 패드
Claims (11)
- 화학적 기계적 연마에 이용되는 연마액으로서,
지립과, 유기산과, 수용성 고분자를 함유하고,
하기 식 (1)~식 (3)을 모두 충족시키는, 연마액.
식 (1): 1.5≤η100rpm/η1000rpm≤5
식 (2): 1.2≤η100rpm/η500rpm≤5
식 (3): η100rpm/η1000rpm>η100rpm/η500rpm
식 (1)~식 (3) 중, η100rpm은, 40%RH, 23℃에 있어서 회전 점도계에 의하여 회전수 100rpm으로 측정되는 상기 연마액의 점도이고, η500rpm은, 40%RH, 23℃에 있어서 회전 점도계에 의하여 회전수 500rpm으로 측정되는 상기 연마액의 점도이며, η1000rpm은, 40%RH, 23℃에 있어서 회전 점도계에 의하여 회전수 1000rpm으로 측정되는 상기 연마액의 점도이다. - 청구항 1에 있어서,
상기 수용성 고분자의 중량 평균 분자량이, 5000~100000인, 연마액. - 청구항 1 또는 청구항 2에 있어서,
상기 수용성 고분자가, 폴리아크릴산, 폴리메타크릴산 및, 폴리아크릴산과 폴리메타크릴산 중 적어도 1종을 함유하는 공중합체로 이루어지는 군으로부터 선택되는 적어도 어느 1종인, 연마액. - 청구항 1 또는 청구항 2에 있어서,
상기 수용성 고분자의 함유량이 0.5~4질량%인, 연마액. - 청구항 1 또는 청구항 2에 있어서,
상기 유기산이, 석신산, 말산, 말론산 및 시트르산으로 이루어지는 군으로부터 선택되는 적어도 어느 1종인, 연마액. - 청구항 1 또는 청구항 2에 있어서,
산화제를 더 함유하는, 연마액. - 청구항 6에 있어서,
상기 산화제의 함유량이, 연마액 전체 질량에 대하여 0.03질량% 이상인, 연마액. - 청구항 6에 있어서,
상기 산화제가, 과산화 수소인, 연마액. - 청구항 1 또는 청구항 2에 있어서,
지립의 함유량이 3질량% 이상인, 연마액. - 청구항 1 또는 청구항 2에 있어서,
pH가, 2.0~6.0의 범위인, 연마액. - 연마 정반에 장착된 연마 패드에, 청구항 1 또는 청구항 2에 기재된 연마액을 공급하면서, 피연마체의 피연마면을 상기 연마 패드에 접촉시키고, 상기 피연마체, 및 상기 연마 패드를 상대적으로 움직여 상기 피연마면을 연마하여 연마가 완료된 피연마체를 얻는 공정을 포함하는, 화학적 기계적 연마 방법.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2016-123235 | 2016-06-22 | ||
| JP2016123235 | 2016-06-22 | ||
| PCT/JP2017/020409 WO2017221660A1 (ja) | 2016-06-22 | 2017-06-01 | 研磨液、化学的機械的研磨方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20190007025A KR20190007025A (ko) | 2019-01-21 |
| KR102169835B1 true KR102169835B1 (ko) | 2020-10-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187036008A Active KR102169835B1 (ko) | 2016-06-22 | 2017-06-01 | 연마액, 화학적 기계적 연마 방법 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6761469B2 (ko) |
| KR (1) | KR102169835B1 (ko) |
| CN (1) | CN109312211A (ko) |
| TW (1) | TWI744337B (ko) |
| WO (1) | WO2017221660A1 (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6924616B2 (ja) * | 2017-05-25 | 2021-08-25 | ニッタ・デュポン株式会社 | 研磨用スラリー |
| JP7002354B2 (ja) * | 2018-01-29 | 2022-02-04 | ニッタ・デュポン株式会社 | 研磨用組成物 |
| US20220049125A1 (en) * | 2018-12-12 | 2022-02-17 | Basf Se | Chemical mechanical polishing of substrates containing copper and ruthenium |
| CN109746771B (zh) * | 2019-02-14 | 2020-11-20 | 南京航空航天大学 | 一种CsPbX3无机钙钛矿晶体材料的抛光方法 |
| WO2020255921A1 (ja) * | 2019-06-17 | 2020-12-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP7368997B2 (ja) * | 2019-09-30 | 2023-10-25 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN114227527A (zh) * | 2020-09-09 | 2022-03-25 | 中国科学院微电子研究所 | 研磨试剂及其制备方法、化学机械研磨方法及其装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008095078A1 (en) | 2007-01-31 | 2008-08-07 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
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| JPS5176078A (en) * | 1974-12-23 | 1976-07-01 | Hitachi Ltd | Handaboshokumakuo hodokoshita handotaisochi |
| WO2006115393A1 (en) * | 2005-04-28 | 2006-11-02 | Techno Semichem Co., Ltd. | Auto-stopping abrasive composition for polishing high step height oxide layer |
| KR100661273B1 (ko) * | 2005-04-28 | 2006-12-26 | 테크노세미켐 주식회사 | 고단차 산화막의 평탄화를 위한 화학기계적 연마조성물 |
| EP2006891A4 (en) * | 2006-04-03 | 2011-02-23 | Jsr Corp | AQUEOUS DISPERSION FOR CHEMICAL-MECHANICAL POLISHING, METHOD FOR CHEMICAL-MECHANICAL POLISHING, AND KIT FOR PRODUCING AN AQUEOUS DISPERSION FOR CHEMICAL-MECHANICAL POLISHING |
| CN101490814A (zh) * | 2006-10-06 | 2009-07-22 | Jsr株式会社 | 化学机械研磨用水系分散体及半导体装置的化学机械研磨方法 |
| JP5333742B2 (ja) * | 2008-02-18 | 2013-11-06 | Jsr株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| KR101563023B1 (ko) * | 2008-02-18 | 2015-10-23 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법 |
| US8734204B2 (en) | 2008-04-15 | 2014-05-27 | Hitachi Chemical Company, Ltd. | Polishing solution for metal films and polishing method using the same |
| JP2009105455A (ja) * | 2009-02-10 | 2009-05-14 | Hitachi Chem Co Ltd | 素子分離形成方法 |
| WO2013152894A1 (de) * | 2012-04-13 | 2013-10-17 | Boehringer Ingelheim International Gmbh | Zerstäuber mit kodiermitteln |
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- 2017-06-01 JP JP2018523645A patent/JP6761469B2/ja active Active
- 2017-06-01 WO PCT/JP2017/020409 patent/WO2017221660A1/ja not_active Ceased
- 2017-06-01 KR KR1020187036008A patent/KR102169835B1/ko active Active
- 2017-06-01 CN CN201780033060.5A patent/CN109312211A/zh active Pending
- 2017-06-14 TW TW106119744A patent/TWI744337B/zh active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008095078A1 (en) | 2007-01-31 | 2008-08-07 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
Non-Patent Citations (2)
| Title |
|---|
| The International Journal of Manufacturing Technology, 2003, 22.5-6: 401-409 |
| Wear, 2010, 268.5-6: 837-844 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI744337B (zh) | 2021-11-01 |
| KR20190007025A (ko) | 2019-01-21 |
| JP6761469B2 (ja) | 2020-09-23 |
| WO2017221660A1 (ja) | 2017-12-28 |
| TW201805399A (zh) | 2018-02-16 |
| CN109312211A (zh) | 2019-02-05 |
| JPWO2017221660A1 (ja) | 2019-04-25 |
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