KR102009800B1 - Organic light emitting display device and method for fabricating the same - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device and a method of manufacturing the same, which provide a color filter in the TFT region, thereby preventing the light emitted from the organic light emitting element from being incident on the TFT and improving the life thereof. A display device includes: a substrate in which a plurality of sub pixel regions including a TFT region and a light emitting region are defined; A thin film transistor formed in the TFT region; A passivation layer formed on the entire surface of the substrate to cover the thin film transistor; A first color filter formed on the passivation layer and a second color filter formed on the same layer as the first color filter and formed on the emission area; An overcoat layer formed on the entire surface of the substrate to cover the first and second color filters; A contact hole exposing the thin film transistor by selectively removing the passivation layer and the overcoat layer; A first electrode formed on the overcoat layer and connected to the thin film transistor through the contact hole; A light emitting layer on the first electrode of the light emitting region; And a second electrode formed on the light emitting layer.

Description

Organic light-emitting display device and method for manufacturing the same {ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME}

The present invention relates to an organic light emitting diode display, and more particularly to an organic light emitting diode display and a method of manufacturing the same.

Video display devices that implement a variety of information as screens are core technologies of the information and communication era, and are being developed in a direction of thinner, lighter, portable and high performance. BACKGROUND ART As a flexible display that can be bent in pursuit of space and convenience is demanded, an organic light emitting display device that controls the amount of light emitted from the organic light emitting layer as a flat panel display device has recently been in the spotlight.

The organic light emitting diode display includes a substrate on which a thin film transistor (TFT) is formed, an organic light emitting element formed on the substrate, and an encapsulation layer formed to cover the organic light emitting display element. The thin film transistor is formed for each sub pixel region defined by the gate wiring and data wiring intersected on the substrate, and the organic light emitting element is connected to the thin film transistor formed in each sub pixel region.

In this case, the organic light emitting diode includes a first electrode, a second electrode, and a light emitting layer formed between the first electrode and the second electrode. Electrons and holes are injected and transferred into the light emitting layer by applying an electric field to the first electrode and the second electrode so that the paired electrons and holes in the light emitting layer emit light while falling from the excited state to the ground state.

The organic light emitting diode as described above is formed in each sub pixel region formed by crossing a plurality of gate lines and data lines on a substrate, and the first electrode of the organic light emitting element is connected to the thin film transistor formed in each sub pixel region.

Hereinafter, a general organic light emitting diode display will be described in detail with reference to the accompanying drawings.

1 is a plan view of a general organic light emitting display device.

As shown in FIG. 1, a plurality of gate lines and data lines intersect to define a sub pixel area. Each sub-pixel region includes a TFT region in which a thin film transistor TFT is formed and a light emitting region in which light generated by the organic light emitting element is emitted.

In the organic light emitting device, holes are injected into the light emitting layer from the first electrode, and electrons are injected from the second electrode to recombine the injected holes and electrons to generate excitons, and the excitons fall to the ground state and emit light. In general, the light emitting layer emits white light, and the white light generated in the light emitting layer passes through the color filters formed in each sub-pixel area and emits light corresponding to each color filter to the outside.

However, in the general organic light emitting diode display, since the color filter is formed only in the emission region, light emitted from the organic light emitting diode may penetrate into the thin film transistor. In particular, when the thin film transistor is an oxide thin film transistor (Oxide TFT), a problem arises in that BTS (Bias Temperature Stress) characteristics are deteriorated by light incident on the thin film transistor.

The present invention is to solve the above problems, by forming a color filter in the TFT region, the color filter to block the light traveling to the thin film transistor (TFT) to improve the reliability of the thin film transistor and to improve the life of the organic light emitting device An object of the present invention is to provide an organic light emitting display device and a method of manufacturing the same.

The organic light emitting diode display of the present invention for achieving the above object includes a substrate in which a plurality of sub-pixel regions including a TFT region and a light emitting region are defined; A thin film transistor formed in the TFT region; A passivation layer formed on the entire surface of the substrate to cover the thin film transistor; A first color filter formed on the passivation layer and a second color filter formed on the same layer as the first color filter and formed on the emission area; An overcoat layer formed on the entire surface of the substrate to cover the first and second color filters; A contact hole exposing the thin film transistor by selectively removing the passivation layer and the overcoat layer; A first electrode formed on the overcoat layer and connected to the thin film transistor through the contact hole; A light emitting layer on the first electrode of the light emitting region; And a second electrode formed on the light emitting layer.

The first color filter is selected from a red color filter, a green color filter, and a blue color filter, and the second color filter is a red color filter.

A third color filter is further formed on the second color filter to emit light of a color different from that of the second color filter.

The third color filter emits light of a color different from that of the first color filter.

In addition, a method of manufacturing an organic light emitting display device of the present invention for achieving the same object comprises the steps of forming a thin film transistor formed in the TFT region of the substrate; Forming a protective film on the entire surface of the substrate to cover the thin film transistor; Forming a first color filter on the passivation film of the light emitting region, and forming a second color filter on the passivation film of the TFT region; Forming an overcoat layer on the entire surface of the substrate to cover the first and second color filters; Selectively removing the passivation layer and the overcoat layer to form a contact hole exposing the thin film transistor; Forming a first electrode on the overcoat layer to be connected to the thin film transistor through the contact hole; Forming a light emitting layer on the first electrode of the light emitting region; And forming a second electrode on the light emitting layer.

The first color filter is selected from a red color filter, a green color filter, and a blue color filter, and the second color filter is a red color filter.

The method may further include forming a third color filter on the second color filter to emit light of a color different from that of the second color filter.

The third color filter emits light of a color different from that of the first color filter.

The organic light emitting diode display and a method of manufacturing the same of the present invention as described above can form a color filter in the TFT region, thereby preventing the light generated from the organic light emitting device from penetrating the thin film transistor. Therefore, the reliability of the thin film transistor can be improved and the life of the organic light emitting device can be improved.

1 is a plan view of a typical organic light emitting display device.
2A is a plan view of an organic light emitting diode display according to a first exemplary embodiment of the present invention.
FIG. 2B is a sectional view taken along line II ′ of FIG. 2A; FIG.
3A is a plan view of an organic light emitting diode display according to a second exemplary embodiment of the present invention.
3b is a sectional view taken along line II ′ of FIG. 3a;
4 is a cross-sectional view showing white light passing through a G color filter and an R color filter stacked one after another;
5A to 5F are cross-sectional views illustrating a method of manufacturing the organic light emitting display device of the present invention.

Hereinafter, an organic light emitting diode display and a method of manufacturing the same will be described in detail with reference to the accompanying drawings.

First Embodiment

2A is a plan view of an organic light emitting diode display according to a first exemplary embodiment of the present invention, and FIG. 2b is a cross-sectional view taken along line II ′ of FIG. 2a.

As shown in FIG. 2A, the plurality of gate lines and the data lines cross each other to define a plurality of sub pixel regions in a matrix form, and each sub pixel region includes a TFT region and a light emitting region. At this time, a color filter for determining the color of light emitted from each sub pixel region is formed not only in the light emitting region but also in the TFT region.

Specifically, as shown in FIG. 2B, a thin film transistor is formed on the substrate 100. In the drawing, an amorphous silicon TFT using an amorphous silicon as the semiconductor layer 130 is illustrated. However, the TFT is an indium gallium zinc oxide (IGZO) or zinc oxide (ZnO) as the semiconductor layer 130. , Oxide TFT using oxides such as titanium oxide (TiO), organic TFT using organic material as semiconductor layer 130, and polycrystalline silicon using polycrystalline silicon as semiconductor layer 130. It may be selected from a thin silicon TFT.

In detail, the thin film transistor may be formed on the front surface of the substrate 100 so as to protrude from the gate wiring (not shown) or to cover the gate electrode 110a and the gate electrode 110a defined as a partial region of the gate wiring (not shown). The semiconductor layer 130 and the data line formed on the insulating layer 120 and the gate insulating layer 120 and overlapping the gate electrode 110a, and the active layer (not shown) and the ohmic contact layer (not shown) are sequentially stacked. It includes a source electrode 140a extending from the (not shown) and a drain electrode 140b spaced apart from the source electrode 140a.

First and second passivation layers 150 and 160 are sequentially formed on the entire surface of the first substrate 100 to cover the thin film transistor. In this case, the first passivation layer 150 is formed of SiOx, SiNx, Al ₂ O _3. It is preferable that the inorganic protective film is formed of a material such as or the like, and the second protective film 160 is an organic protective film.

The first color filter 170a is formed on the emission area of each sub pixel area on the second passivation layer 160. The white light emitted from the organic light emitting device through the first color filter 170a implements light of various colors, and the white light emitted from the organic light emitting device is implemented in the sub-pixel region where the color filter is not formed. do. At this time, when the thickness of the first color filter 170a is too thick, the light transmittance decreases, and when the thickness is too thin, the color reproduction rate decreases. Therefore, the thickness of the color filter 170a is preferably about 1 μm.

The second color filter 170b is also formed on the second passivation film 160 in the TFT region. In this case, a color filter selected from a red (R) color filter, a green (G) color filter, and a blue (B) color filter is used as the first color filter 170a in the emission area of each sub-pixel area. It is preferable that all of the second color filters 170b formed in the TFT region are formed of a red (R) color filter. This is because the green (G) color filter and the blue (B) color filter have higher energy than the red (R) color filter.

Specifically, when the light emitted from the organic light emitting device is emitted to the outside through the substrate 100, the light proceeds to the thin film transistor through the transparent or translucent first and second passivation layers 150 and 160. As a result, the leakage current of the thin film transistor is increased, the lifespan of the organic light emitting diode display is reduced, and power consumption is increased. In particular, when the thin film transistor is an oxide thin film transistor, the BTS (Bias Temperature Stress) characteristic, which is reliable when the temperature is increased while applying a voltage, is very low.

Therefore, the organic light emitting diode display of the present invention forms color filters not only in the light emitting region but also in the TFT region, whereby the second color filter 170b formed in the TFT region blocks light incident to the thin film transistor, thereby reducing the characteristics and organic properties of the thin film transistor. The lifespan of the light emitting display device can be improved.

An overcoat layer 180 is formed on the entire surface of the substrate 100 including the first and second color filters 170a and 170b and the second passivation layer 160 to planarize the upper surface of the substrate 100. The drain electrode 140b is exposed through a contact hole (not shown) formed by selectively removing the overcoat layer 180 and the second passivation layer 160.

On the overcoat layer 180, an organic light emitting device including a first electrode 190a, a light emitting layer 190b, and a second electrode 190c sequentially stacked is formed. In detail, the first electrode 190a is electrically connected to the drain electrode 140b exposed through the contact hole (not shown). The first electrode 190a is an anode, and tin oxide (TO), indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (Indium) Tin Zinc Oxide (ITZO) or the like is formed of a transparent conductive material.

A bank insulating layer 200 having a bank hole exposing a portion of the first electrode 190a is formed on the first electrode 190a. The bank insulating layer 200 prevents light leakage from occurring in regions other than the emission region. A light emitting layer 190b made of a white organic light emitting material is formed in the bank hole, and a second electrode 190c is formed on the light emitting layer 190b. The second electrode 190c is formed of a reflective metal material such as aluminum (Al) as a cathode, and reflects light generated in the emission layer 190b toward the substrate 100.

Although not shown, a hole injection layer and a hole transport layer may be further formed between the first electrode 190a and the light emitting layer 190b, and the hole injection layer and the hole transport layer may be used to inject holes well into the light emitting layer 190b. . In addition, an electron injection layer and an electron transport layer may be further formed between the light emitting layer 190b and the second electrode 190c, and the electron injection layer and the electron transport layer may be used to inject electrons into the light emitting layer 190b.

In the organic light emitting diode as described above, when a voltage is applied between the first electrode 190a and the second electrode 190c, holes are formed from the first electrode 190a and electrons are discharged from the second electrode 190c. It is injected and recombined in the emission layer 190b to generate excitons. In addition, the light emitted as the exciton falls to the ground state passes through the first color filter 170a under the organic light emitting device, thereby implementing light corresponding to the first color filter 170a.

Second Embodiment

3A is a plan view of an organic light emitting diode display according to a second exemplary embodiment of the present invention, and FIG. 3b is a cross-sectional view taken along line II ′ of FIG. 3a.

As shown in FIG. 3A, in the organic light emitting diode display according to the second exemplary embodiment of the present invention, a first color filter for forming white light emitted from the organic light emitting diode in a different color is formed in a light emitting region, and is different from each other in the TFT region. Second and third color filters that emit light of color are laminated.

Specifically, as shown in FIG. 3B, in the organic light emitting diode display according to the second exemplary embodiment, a thin film is formed in a TFT region of the substrate 100 in which a plurality of sub pixel regions including a TFT region and a light emitting region are defined in a matrix form. Transistors are formed. The first and second passivation layers 150 and 160 are sequentially formed on the entire surface of the substrate 100 to cover the thin film transistor.

The first color filter 170a is formed on the emission area of each sub pixel area on the second passivation layer 160. The white light emitted from the organic light emitting device through the first color filter 170a implements light of various colors, and the white light emitted from the organic light emitting device is implemented in the sub-pixel region where the color filter is not formed. do. Then, second and third color filters 170b and 170c are laminated on the second passivation film 160 in the TFT region.

A red (R) color filter, a green (G) color filter, and a blue (B) color filter are formed in the emission area of each sub pixel area. In addition, the second and third color filters 170b and 170c formed in the TFT region emit different colors and light. In the drawing, the first and second color filters 170a and 170b are red (Red; R). ) Color filter, and the third color filter 170c is a green (G) color filter.

Since the second and third color filters 170b and 170c formed in the TFT region are for preventing white light emitted from the organic light emitting element from being incident on the thin film transistor, the color filters for emitting light of different colors are laminated. By doing so, the light can be blocked efficiently. In this case, the third color filter 170c may emit light having a different color from that of the first color filter 170a, and the second color filter 170b may be the same color filter as the first color filter 170a. . In this case, a fourth color filter (not shown) may be further formed on the third color filter 170c to emit light having a different color from the second and third color filters 170b and 170c.

4 is a cross-sectional view showing white light passing through a G color filter and an R color filter stacked one after another.

As shown in FIG. 4, when the G color filter and the R color filter are stacked in this order, white light emitted from the organic light emitting element is first incident on the G color filter. The white light passing through the G color filter implements green light. However, the green light incident on the R color filter does not pass through the R color filter and is blocked. Accordingly, the organic light emitting diode display according to the second exemplary embodiment of the present invention can effectively block light incident to the TFT by stacking color filters emitting light of different colors in the TFT region.

Referring to FIG. 3B again, an overcoat layer 180 is formed on the entire surface of the substrate 100 including the second passivation layer 160 including the first, second, and third color filters 170a, 170b, and 170c. Planarize the top surface of 100). The drain electrode 140b is exposed through a contact hole (not shown) formed by selectively removing the overcoat layer 180 and the second passivation layer 160.

On the overcoat layer 180, an organic light emitting device including a first electrode 190a, a light emitting layer 190b, and a second electrode 190c sequentially stacked is formed. A bank insulating layer 200 having a bank hole exposing a portion of the first electrode 190a is formed on the first electrode 190a. The bank insulating layer 200 prevents light leakage from occurring in regions other than the emission region.

A light emitting layer 190b made of a white organic light emitting material is formed in the bank hole. The second electrode 190c is formed on the light emitting layer 190b. The second electrode 190c is formed of a reflective metal material such as aluminum (Al) as a cathode, and reflects light generated in the emission layer 190b toward the substrate 100.

Although not shown, a hole injection layer and a hole transport layer may be further formed between the first electrode 190a and the light emitting layer 190b, and the hole injection layer and the hole transport layer may be used to inject holes well into the light emitting layer 190b. . In addition, an electron injection layer and an electron transport layer may be further formed between the light emitting layer 190b and the second electrode 190c, and the electron injection layer and the electron transport layer may be used to inject electrons into the light emitting layer 190b.

In the organic light emitting diode as described above, when a voltage is applied between the first electrode 190a and the second electrode 190c, holes are formed from the first electrode 190a and electrons are discharged from the second electrode 190c. It is injected and recombined in the emission layer 190b to generate excitons. In addition, the light emitted as the exciton falls to the ground state passes through the first color filter 170a under the organic light emitting device, thereby implementing light corresponding to the first color filter 170a.

Hereinafter, a method of manufacturing the organic light emitting diode display of the present invention will be described in detail.

5A through 5F are cross-sectional views illustrating a method of manufacturing the organic light emitting diode display of the present invention and illustrate a method of manufacturing the organic light emitting diode display of the first embodiment.

First, as shown in FIG. 5A, a thin film transistor is formed on the substrate 100. The thin film transistor is formed in the TFT region of each sub pixel region defined by the gate wiring and the data wiring crossing each other.

Specifically, a gate wiring (not shown) and a gate electrode 110a are formed on the substrate 100. In addition, SiOx, SiNx, Al are disposed on the entire surface of the substrate 100 including the gate wiring (not shown) and the gate electrode 110a.₂O₃ The gate insulating layer 120 is formed of an inorganic material such as the like.

The semiconductor layer 130 is formed to overlap the gate electrode 110a with the gate insulating layer 120 interposed therebetween, and the active layer (not shown) and the ohmic contact layer (not shown) are sequentially stacked. A data line (not shown) intersecting the gate line (not shown) is formed with the gate insulating layer 120 interposed therebetween, and is spaced apart from the source electrode 140a and the source electrode 140a connected to the data line (not shown). The drain electrode 140b is formed.

The thin film transistor formed as described above is an amorphous silicon TFT that manufactures a thin film transistor substrate using amorphous silicon as the semiconductor layer 130. In some cases, the indium gallium zinc oxide (IGZO) may be used as the semiconductor layer 130. , Oxide thin film transistor using ZnO (Zinc Oxide), TiO (Titanium Oxide), etc., organic TFT using organic material as semiconductor layer 130 and polycrystalline silicon using polycrystalline silicon as semiconductor layer 130 It may be selected from a silicon thin film transistor (Poly Silicon TFT).

Next, as shown in FIG. 5B, first and second passivation layers 150 and 160 are sequentially formed on the entire surface of the substrate 100 including the TFT region and the emission region to cover the thin film transistor. 5C, the first color filter 170a is formed on the second passivation layer 160, and the first color filter 170a is formed in the emission region. In this case, the first color filter 170a is formed by applying a color photoresist on the entire surface of the second passivation layer 160 and then exposing and developing the same.

For example, a red photoresist is coated on the entire surface of the second passivation layer 160 and then patterned to form a red (R) color filter. The green photoresist is applied to the entire surface of the second passivation layer 160 including the red color filter, and then patterned to form a green color filter. Similarly, a blue color filter is formed.

That is, a first color filter 170a selected from a red (R) color filter, a green (G) color filter, and a blue (B) color filter is formed in each emission area of the sub pixel area, and each sub The second color filter 170b is formed in the TFT area of the pixel area using a red (R) color filter. In this case, the first color filter 170a is for realizing the white light emitted from the organic light emitting device in various colors, and the second color filter 170b is a thin film transistor formed in the TFT region and the light emitted from the organic light emitting device. Prevent it from penetrating.

Subsequently, as shown in FIG. 5D, an overcoat layer 180 is formed on the entire surface of the second passivation layer 160 including the first and second color filters 170a and 170b. The first and second passivation layers 150 and 160 and the overcoat layer 180 are selectively removed to form contact holes (not shown) exposing the drain electrode 140b.

5E, tin oxide (TO), indium tin oxide (ITO), and indium zinc oxide (IZO) on the entire surface of the substrate 100 including the overcoat layer 180. And depositing a transparent conductive material such as indium tin zinc oxide (ITZO). The transparent conductive material is patterned to form a first electrode 200a connected to the drain electrode 140b through a contact hole (not shown). Next, a bank insulating layer 200 having a bank hole exposing a portion of the first electrode 190a is formed. The bank insulating layer 200 prevents light leakage from occurring in regions other than the emission region.

As shown in FIG. 4F, the emission layer 190b is formed on the first electrode 190a exposed through the bank hole. The light emitting layer 190b is formed of a white organic light emitting material, and white light emitted from the light emitting layer 190b passes through the first color filter 170a and the substrate 100 and is emitted to the outside. The second electrode 190c is formed to cover the light emitting layer 190b. The second electrode 190c is formed of a reflective metal material such as aluminum (Al) as a cathode, and reflects white light emitted from the light emitting layer 190b in the direction of the first electrode 190a.

Although not shown, a hole injection layer and a hole transport layer may be further formed between the first electrode 190a and the light emitting layer 190b, and the hole injection layer and the hole transport layer may be used to inject holes well into the light emitting layer 190b. . In addition, an electron injection layer and an electron transporting layer may be further formed between the light emitting layer 190b and the second electrode 190c, and the electron injection layer and the electron transporting layer are used to inject the electrons into the light emitting layer 190b. Although not shown, an encapsulation layer may be formed on the second electrode 190c to prevent external moisture and oxygen from penetrating into the organic light emitting device.

As described above, the organic light emitting diode display of the present invention may form a color filter in the TFT region to prevent light generated from the organic light emitting diode from penetrating into the thin film transistor. Therefore, the reliability of the thin film transistor can be improved and the life of the organic light emitting device can be improved.

On the other hand, the present invention described above is not limited to the above-described embodiment and the accompanying drawings, it is possible that various substitutions, modifications and changes within the scope without departing from the technical spirit of the present invention It will be apparent to those of ordinary skill in Esau.

100 substrate 110a gate electrode
120: gate insulating film 130: semiconductor layer
140a: source electrode 140b: drain electrode
150: first protective film 160: second protective film
170a: first color filter 170b: second color filter
170c: third color filter 180: overcoat layer
200: bank insulating film 190a: first electrode
190b: light emitting layer 190c: second electrode

Claims (8)

A substrate in which sub pixel regions that implement different colors are defined;
A thin film transistor positioned on a TFT region of each sub pixel region;
A passivation layer on the substrate and covering the thin film transistor in each sub pixel region;
A color filter disposed on the passivation layer and overlapping the TFT region of each sub pixel region;
An overcoat layer disposed on the passivation layer and covering a color filter of each sub pixel region; And
An organic light emitting diode is disposed on a light emitting region of each sub pixel region and is connected to a thin film transistor of a corresponding sub pixel region through a contact hole passing through the passivation layer and the overcoat layer.
And the color filter overlapping the TFT region of each sub pixel region emits light of the same color. The method of claim 1,
And the color filter is a red color filter. A substrate comprising a TFT region and a light emitting region;
A thin film transistor positioned on the TFT region of the substrate;
A passivation layer on the substrate and covering the thin film transistor;
A first color filter on the passivation layer and overlapping the emission area;
A second color filter disposed on the passivation layer and overlapping the TFT region;
An overcoat layer on the passivation layer and covering the first color filter and the second color filter;
A first electrode on the overcoat layer and connected to the thin film transistor through a contact hole passing through the passivation layer and the overcoat layer;
A light emitting layer on the first electrode and overlapping the light emitting region;
A second electrode on the light emitting layer; And
And a third color filter disposed between the second color filter and the overcoat layer and emitting light having a color different from that of the second color filter. The method of claim 3, wherein
And the third color filter emits light of a color different from that of the first color filter. Preparing a substrate in which sub pixel regions are defined;
Forming a thin film transistor on a TFT region of each sub pixel region;
Forming a protective film on the substrate to cover the thin film transistors of each sub pixel region;
Forming a color filter on the passivation layer, the color filter overlapping the TFT region of each sub pixel region;
Forming an overcoat layer covering the color filter of each sub pixel region on the passivation layer; And
Forming an organic light emitting element on the light emitting region of each sub pixel region, the organic light emitting element being connected to the thin film transistor of the sub pixel region through a contact hole penetrating through the passivation layer and the overcoat layer;
Adjacent sub-pixel areas implement different colors,
The color filter overlapping the TFT region of each sub pixel region emits light of the same color. The method of claim 5,
The color filter is a method of manufacturing an organic light emitting display device, characterized in that the red color filter. Preparing a substrate including a TFT region and a light emitting region;
Forming a thin film transistor on the TFT region of the substrate;
Forming a passivation layer covering the thin film transistor on the substrate;
Forming a first color filter overlapping the emission area on the passivation layer;
Forming a second color filter on the passivation layer, the second color filter overlapping the TFT region;
Forming a third color filter on the second color filter;
Forming an overcoat layer covering the first to third color filters on the passivation layer;
Forming a first electrode on the overcoat layer, the first electrode being connected to the thin film transistor through a contact hole passing through the passivation layer and the overcoat layer;
Forming a light emitting layer overlapping the light emitting region on the first electrode;
Forming a second electrode on the light emitting layer,
And the third color filter emits light of a color different from that of the second color filter. The method of claim 7, wherein
And the third color filter emits light of a color different from that of the first color filter.

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