KR101508166B1 - 실리콘 나노입자 제조장치 - Google Patents
실리콘 나노입자 제조장치 Download PDFInfo
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- KR101508166B1 KR101508166B1 KR20130036856A KR20130036856A KR101508166B1 KR 101508166 B1 KR101508166 B1 KR 101508166B1 KR 20130036856 A KR20130036856 A KR 20130036856A KR 20130036856 A KR20130036856 A KR 20130036856A KR 101508166 B1 KR101508166 B1 KR 101508166B1
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- 239000002105 nanoparticle Substances 0.000 title description 5
- 239000005543 nano-size silicon particle Substances 0.000 claims abstract description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 238000007599 discharging Methods 0.000 claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 21
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 17
- 239000002159 nanocrystal Substances 0.000 claims abstract description 16
- 238000005054 agglomeration Methods 0.000 claims abstract description 6
- 230000002776 aggregation Effects 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 64
- 238000001816 cooling Methods 0.000 claims description 34
- 238000002347 injection Methods 0.000 claims description 19
- 239000007924 injection Substances 0.000 claims description 19
- 239000000498 cooling water Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 6
- 239000006185 dispersion Substances 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 4
- 239000000112 cooling gas Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 239000002245 particle Substances 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 6
- 229910001416 lithium ion Inorganic materials 0.000 description 6
- 230000009471 action Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000011856 silicon-based particle Substances 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002981 Li4.4Si Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
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Abstract
이를 위해 본 발명은 주입된 가스가 ICP(INDUCTIVE COUPLED PLASMA) 코일(21)의 플라즈마 반응에 의해 실리콘 나노입자(A)로 생성되고, 상기 실리콘 나노입자(A)의 입자간 응집 방지를 위해 단극성으로 하전시켜주는 코로나 방전부(300)가 포함되는 것을 특징으로 하는 실리콘 나노입자 제조장치를 제공한다.
Description
도 2는 본 실시예에 따른 실리콘 나노입자 제조장치의 하부 형상을 나타낸 단면도.
도 3은 본 실시예에 따른 실리콘 나노입자 제조장치의 작동을 나타낸 개념도.
21: ICP(INDUCTIVE COUPLED PLASMA) 코일
100: 가스주입부
200: 반응부
300: 코로나 방전부
400: 냉각부
500: 포집부
Claims (9)
- 입구측에 설치되어 1차가스가 주입되는 다수개의 제1가스주입통로 및 상기 제1가스주입통로에 교번되도록 설치되며, 2차가스가 주입되는 제2가스주입통로를 구비하는 가스주입부;
상기 가스주입부의 아래에서, 주입된 상기 1차가스 및 상기 2차가스를 실리콘 나노입자로 생성하는 ICP(INDUCTIVE COUPLED PLASMA) 코일이 권취된 플라즈마 반응부;
상기 플라즈마 반응부의 아래에서, 상기 실리콘 나노입자의 입자간 응집 방지를 위해 상기 실리콘 나노입자를 단극성으로 하전시켜주는 코로나 방전부;
상기 코로나 방전부의 아래에서, 상기 코로나 방전부를 통해 배출된 상기 실리콘 나노입자가 통과하는 내부를 향해 하향경사지도록 설치되어 비활성가스를 공급하는 냉각가스공급부를 포함하는 공랭부; 및
상기 공랭부의 아래에서, 상기 실리콘 나노입자를 포집시키는 포집부;
상기 플라즈마 반응부에서 반응하지 않은 상기 제1가스와 상기 제2가스 및 상기 포집부에서 포집되지 않은 실리콘 나노입자가 상기 가스주입부와 평행하게 설치된 가스배출부를 통해 배출되도록 U 형상의 곡관을 이루는 것을 특징으로 하는 실리콘 나노입자 제조장치.
- 삭제
- 청구항 1에 있어서,
상기 코로나 방전부는 상기 플라즈마 반응부에서 생성된 실리콘 나노입자를 하부로 배출하여 분산시키는 분산부와, 상기 분산부의 하부에 설치되어 이온을 공급하는 코로나 방전기를 포함하는 것을 특징으로 하는 실리콘 나노입자 제조장치.
- 삭제
- 청구항 1에 있어서,
상기 공랭부의 아래에서, 냉각수 재킷에 의해 냉각작용을 하는 수냉부를 포함하는 것을 특징으로 하는 실리콘 나노입자 제조장치.
- 삭제
- 청구항 1에 있어서,
상기 포집부는 측방향으로부터 슬라이딩에 의해 내부의 통로에 탈부착 가능하게 설치되어, 상부로부터 배출되는 실리콘 나노입자를 포집하기 위한 매쉬필터와;
상기 매쉬필터의 입구에 설치되어, 상기 매쉬필터의 분리 시 상기 내부의 통로로 통과하는 유체의 흐름을 차단시키는 밸브로 구성된 것을 특징으로 하는 실리콘 나노입자 제조장치.
- 청구항 7에 있어서,
상기 포집부의 벽면에는 외부로부터 상기 매쉬필터를 육안으로 확인하여 교체시기를 판단할 수 있도록 하는 뷰포트가 더 설치된 것을 특징으로 하는 실리콘 나노입자 제조장치.
- 청구항 7에 있어서,
상기 포집부의 매쉬필터의 출구에는 상기 포집부의 내부 통로의 압력을 조절할 수 있도록 하는 진공장치가 더 설치된 것을 특징으로 하는 실리콘 나노입자 제조장치.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20130036856A KR101508166B1 (ko) | 2013-04-04 | 2013-04-04 | 실리콘 나노입자 제조장치 |
| US14/068,797 US8992849B2 (en) | 2013-04-04 | 2013-10-31 | Apparatus for preparing silicon nanoparticle using ICP |
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| Application Number | Priority Date | Filing Date | Title |
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| KR20130036856A KR101508166B1 (ko) | 2013-04-04 | 2013-04-04 | 실리콘 나노입자 제조장치 |
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| Publication Number | Publication Date |
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| KR20140120691A KR20140120691A (ko) | 2014-10-14 |
| KR101508166B1 true KR101508166B1 (ko) | 2015-04-14 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017074084A1 (ko) * | 2015-10-29 | 2017-05-04 | ㈜에이치아이엠앤드에이코리아 | Siox의 포집장치 및 포집방법 |
| WO2017204516A1 (ko) * | 2016-05-24 | 2017-11-30 | 주식회사 엔팩 | 금속 나노입자의 제조 방법 및 제조 장치 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101708333B1 (ko) * | 2014-12-02 | 2017-02-21 | 한국에너지기술연구원 | 마이크로파 플라즈마를 이용한 Sⅰ나노입자 제조장치 및 이를 이용한 Sⅰ나노입자의 제조방법 |
| KR102592579B1 (ko) * | 2021-09-30 | 2023-10-23 | 충북대학교 산학협력단 | 태양광 폐패널로부터 실리콘 나노분말을 제조하는 방법 |
| KR102713061B1 (ko) * | 2022-01-13 | 2024-10-04 | 주식회사 이노플라즈텍 | 분말용 플라즈마 처리장치 |
| KR102712531B1 (ko) * | 2022-01-13 | 2024-10-02 | 주식회사 이노플라즈텍 | 분말용 플라즈마 처리장치 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060057826A (ko) * | 2004-11-24 | 2006-05-29 | 삼성전자주식회사 | 나노입자를 제조하기 위한 방법 및 장치 |
| KR20100091554A (ko) * | 2009-02-10 | 2010-08-19 | 한국에너지기술연구원 | Icp를 이용한 실리콘 나노입자 제조 장치 |
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| US8992849B2 (en) | 2015-03-31 |
| US20140301910A1 (en) | 2014-10-09 |
| KR20140120691A (ko) | 2014-10-14 |
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