KR101350648B1 - Layered interconnection for electronic device, and sputtering target for forming a covering layer - Google Patents
Layered interconnection for electronic device, and sputtering target for forming a covering layer Download PDFInfo
- Publication number
- KR101350648B1 KR101350648B1 KR1020120089859A KR20120089859A KR101350648B1 KR 101350648 B1 KR101350648 B1 KR 101350648B1 KR 1020120089859 A KR1020120089859 A KR 1020120089859A KR 20120089859 A KR20120089859 A KR 20120089859A KR 101350648 B1 KR101350648 B1 KR 101350648B1
- Authority
- KR
- South Korea
- Prior art keywords
- coating layer
- film
- wiring film
- atomic
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 23
- 239000011247 coating layer Substances 0.000 claims abstract description 74
- 239000010410 layer Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000203 mixture Substances 0.000 claims abstract description 17
- 239000013077 target material Substances 0.000 claims abstract description 17
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 239000010949 copper Substances 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 9
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical class 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 abstract description 31
- 238000007254 oxidation reaction Methods 0.000 abstract description 31
- 229910001182 Mo alloy Inorganic materials 0.000 abstract description 19
- 239000010408 film Substances 0.000 description 109
- 238000010438 heat treatment Methods 0.000 description 19
- 239000000843 powder Substances 0.000 description 16
- 238000002438 flame photometric detection Methods 0.000 description 14
- 229910052759 nickel Inorganic materials 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910017318 Mo—Ni Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910001257 Nb alloy Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000006872 improvement Effects 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229910001000 nickel titanium Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000002706 hydrostatic effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 229910052757 nitrogen Chemical group 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 210000004379 membrane Anatomy 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- -1 Mo-10Nb Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 210000005081 epithelial layer Anatomy 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000009689 gas atomisation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Conductive Materials (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
내습성이나 내산화성을 개선하고, 또한, 저저항의 주도전층인 Cu와 적층했을 때, 가열공정을 거쳐도 낮은 전기저항값을 유지할 수 있는, Mo 합금으로 되는 피복층을 사용한 전자부품용 적층 배선막 및 피복층을 형성하기 위한 스퍼터링 타겟재를 제공한다.
기판 상에 금속막을 형성한 전자부품용 적층 배선막에 있어서, Cu를 주성분으로 하는 주도전층과 그 도전층의 한쪽 면 및/또는 다른 쪽 면을 덮는 피복층으로 되고, 그 피복층은 원자비에 있어서의 조성식이 Mo100-x-y-Nix-Tiy, 10≤x≤50, 3≤y≤30, x+y≤53으로 표시되며, 잔부가 불가피적 불순물로 되는 전자부품용 적층 배선막. Multilayer wiring film for electronic parts using a coating layer made of an Mo alloy that can improve moisture resistance and oxidation resistance and can maintain a low electrical resistance value even when heated with Cu, which is a low-resistance main conductive layer. And a sputtering target material for forming a coating layer.
In a multilayer wiring film for electronic parts, in which a metal film is formed on a substrate, a main conductive layer containing Cu as a main component and a coating layer covering one surface and / or the other surface of the conductive layer, the coating layer being an atomic ratio The laminated wiring film for electronic components whose composition formula is represented by Mo100 -xy- Nix - Tiy, 10 <= x <= 50, 3 <= y <= 30, x + y < = 53, and remainder becomes an unavoidable impurity.
Description
본 발명은, 내습성, 내산화성이 요구되는 전자부품용 적층 배선막 및 이 적층 배선막의 주도전층의 한쪽 면 및/또는 다른 쪽 면을 덮는 피복층을 형성하기 위한 피복층 형성용 스퍼터링 타겟재에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laminated wiring film for electronic parts requiring moisture resistance and oxidation resistance, and a sputtering target material for forming a coating layer for forming a coating layer covering one surface and / or the other surface of the main conductive layer of the multilayer wiring film. .
유리기판 상에 박막 디바이스를 형성하는 액정 디스플레이(이하, LCD라 한다), 플라즈마 디스플레이 패널(이하, PDP라 한다), 전자 페이퍼 등에 이용되는 전기영동형 디스플레이 등의 평면 표시장치(플랫패널 디스플레이, 이하, FPD라 한다)에 더하여, 각종 반도체 디바이스, 박막 센서, 자기 헤드 등의 박막 전자부품에 있어서는, 낮은 전기저항의 배선막이 필요하다. 예를 들면, LCD, PDP, 유기 EL 디스플레이 등의 FPD는, 대화면, 고정세, 고속 응답화에 수반하여, 그 배선막에는 저저항화가 요구되고 있다. 또한 최근 들어, FPD에 조작성을 더하는 터치패널이나 수지기판을 사용한 플렉시블한 FPD 등의 새로운 제품이 개발되고 있다. Flat panel displays such as liquid crystal displays (hereinafter referred to as LCDs), plasma display panels (hereinafter referred to as PDPs), electrophoretic displays used for electronic paper, etc. for forming thin film devices on glass substrates (flat panel displays, hereinafter) In addition to the thin film electronic components such as various semiconductor devices, thin film sensors, magnetic heads, and the like, a low electrical resistance wiring film is required. For example, FPDs such as LCDs, PDPs, and organic EL displays have a large screen, high definition, and high-speed response, and require low resistance in the wiring film. In recent years, new products such as a flexible FPD using a touch panel and a resin substrate that add operability to the FPD have been developed.
최근 들어, FPD의 구동소자로서 사용되고 있는 박막 트랜지스터(TFT)의 배선막에는 저자항화가 필요하여, 주 배선재료를 Al로 되고 저저항의 Cu를 사용하는 검토가 행해지고 있다. 또한, FPD의 화면을 보면서 직접적인 조작성을 부여하는 터치패널 기판 화면도 대형화가 진행되고 있어, 저저항화를 위해 Cu를 주 배선재료로 사용하는 검토가 진행되고 있다.In recent years, the wiring film of the thin film transistor (TFT) used as a drive element of an FPD needs low-ization, and the investigation which uses Cu of low resistance as a main wiring material is made. In addition, the enlargement of the touch panel substrate screen which gives direct operability while viewing the screen of an FPD is progressing, and the examination which uses Cu as a main wiring material for low resistance is progressing.
현재, TFT에는, Si 반도체막을 사용하고 있어, Cu는 Si와 직접 접촉하면, TFT 제조중의 가열공정에 의해 열확산되어, TFT의 특성을 열화(劣化)시킨다. 이 때문에, Cu와 Si 사이에 내열성이 우수한 Mo나 Mo 합금을 배리어막으로 한 적층 배선막이 사용되고 있다. At present, a Si semiconductor film is used for the TFT, and when Cu is in direct contact with Si, the thermal diffusion is performed by the heating process during TFT manufacturing, thereby degrading the characteristics of the TFT. For this reason, the laminated wiring film which used Mo and Mo alloy as a barrier film excellent in heat resistance between Cu and Si is used.
또한, TFT로부터 연결되는 화소전극이나 휴대형 단말이나 테이블릿 PC 등에 사용되고 있는 터치패널의 위치 검출 전극에는, 일반적으로 투명 도전막인 인듐-주석 산화물(이하, ITO라 한다)이 사용되고 있다. Cu는 ITO와의 콘택트성은 얻어지나, 기판과의 밀착성이 낮은 것으로 인해, 밀착성을 확보하기 위해 Cu를 Mo나 Mo 합금으로 피복한 적층 배선막으로 할 필요가 있다. In addition, indium-tin oxide (hereinafter referred to as ITO), which is a transparent conductive film, is generally used as a pixel electrode connected from a TFT, a position detection electrode of a touch panel used in a portable terminal, a tablelet PC, or the like. Cu obtains contact property with ITO, but due to its low adhesion to the substrate, it is necessary to use Cu as a laminated wiring film coated with Mo or an Mo alloy to ensure adhesion.
또한, 지금까지의 비정질 Si 반도체로부터, 보다 고속 응답을 실현할 수 있는 산화물을 사용한 투명한 반도체막의 적용 검토가 행해지고 있어, 이들 산화물 반도체의 배선막에도 Cu와 순Mo 등을 사용한 적층 배선막이 검토되고 있다.Moreover, application and examination of the transparent semiconductor film which used the oxide which can implement | achieve a faster response from the amorphous Si semiconductor until now are examined, and the laminated wiring film which used Cu and pure Mo etc. for the wiring film of these oxide semiconductors is examined.
본 출원인은, 유리 등과의 밀착성이 낮은 Cu나 Ag와, Mo 주체로서 V 및/또는 Nb를 함유하는 Mo 합금을 적층함으로써, Cu나 Ag가 갖는 낮은 전기저항값을 유지하면서 내식성, 내열성이나 기판과의 밀착성을 개선할 수 있는 것을 제안하고 있다(예를 들면, 특허문헌 1 참조). The applicant of the present invention laminates Cu or Ag, which has low adhesion to glass, and a Mo alloy containing V and / or Nb as the Mo agent, thereby maintaining a low electrical resistance value of Cu and Ag, The thing which can improve the adhesiveness of is proposed (for example, refer patent document 1).
전술한 특허문헌 1에서 제안한 Mo-V, Mo-Nb 합금 등은, 순Mo보다 내식성, 내열성이나 기판과의 밀착성이 우수하기 때문에, 유리기판 상에 형성하는 FPD 용도에서는 널리 사용되고 있다. Mo-V, Mo-Nb alloys and the like proposed in Patent Document 1 described above are widely used in FPD applications formed on glass substrates because they have better corrosion resistance, heat resistance and adhesion to substrates than pure Mo.
그러나, FPD를 제조하는 경우에 있어서, 기판 상에 적층 배선막을 형성한 후에, 다음 공정으로 이동할 때 장시간 대기중에 방치되는 경우가 있다. 또한, 편리성을 향상시키기 위해, 수지 필름을 사용한 경량이며 플렉시블한 FPD 등에 있어서는, 수지 필름이 지금까지의 유리기판 등과 비교하여 투습성이 있기 때문에, 적층 배선막에는 보다 높은 내습성이 요구되고 있다. However, when manufacturing FPD, after forming a laminated wiring film on a board | substrate, it may be left to stand for a long time when moving to the next process. In addition, in order to improve convenience, in a lightweight and flexible FPD using a resin film and the like, since the resin film has moisture permeability compared to conventional glass substrates and the like, higher moisture resistance is required for the laminated wiring film.
또한, FPD의 단자부 등에 신호선 케이블을 장착할 때 대기중에서 가열되는 경우가 있기 때문에, 적층 배선막에는 내산화성의 향상도 요구되고 있다. 이에 더하여, 산화물을 사용한 반도체막에 있어서는, 특성 향상이나 안정화를 위해, 산소를 함유한 분위기나, 산소를 포함하는 보호막을 형성한 후에 350℃ 이상의 고온에서의 가열처리를 행하는 경우가 있다. 이 때문에, 적층 배선막에도 이들의 가열처리를 거친 후에도 안정한 특성을 유지할 수 있도록, 내산화성 향상의 요구가 높아지고 있다. In addition, since the heating may be performed in the air when the signal line cable is attached to the terminal portion of the FPD, the oxidation resistance of the laminated wiring film is also required. In addition, in a semiconductor film using an oxide, heat treatment may be performed at a high temperature of 350 ° C. or higher after the formation of an oxygen-containing atmosphere or a protective film containing oxygen in order to improve or stabilize characteristics. For this reason, the demand for improvement of oxidation resistance is increasing so that a laminated wiring film can maintain a stable characteristic even after going through these heat treatments.
본 발명자의 검토에 의하면, Cu는 Al보다 밀착성, 내습성이나 내산화성이 크게 뒤떨어지기 때문에, 밀착성을 확보하기 위한 하지막(下地膜), Cu의 표면을 보호하는 상층막(캡막)이 되는 피복층의 형성이 필요한 경우가 있다. 전술한 Mo-V, Mo-Nb 합금 등이나 순Mo에서는 내습성이나 내산화성이 충분하지 않아, FPD의 제조공정 중에서 Cu의 피복층으로 했을 때 변색되어 버리는 동시에 산소가 투과되어, Cu의 전기저항값이 크게 증가하는 문제가 발생하는 경우가 있다. 또한, 피복층이 변색되면, 전기적 콘택트성을 열화시켜, 전자부품의 신뢰성 저하로 이어진다. According to the examination of the present inventors, Cu has much inferior adhesion, moisture resistance, and oxidation resistance to Al, so that the coating layer serving as an underlayer to secure the adhesiveness and an upper layer film (cap) to protect the surface of Cu May be required. Mo-V, Mo-Nb alloy and the like described above and pure Mo do not have sufficient moisture resistance and oxidation resistance, and when discolored when the coating layer of Cu is used during the manufacturing process of FPD, oxygen is permeated and oxygen is transmitted. This greatly increasing problem may occur. In addition, when the coating layer is discolored, the electrical contact property is deteriorated, leading to a decrease in reliability of the electronic component.
또한, FPD의 대화면화나 고속구동을 위해, TFT 제조공정 중의 가열온도는 상승하는 경향이 있다. 이 때문에, 주도전층인 Cu와 배리어막이나 밀착막이 되는 피복층을 형성한 적층 배선막에 있어서는, 피복층을 구성하는 원자의 Cu로의 열확산이 진행되어, 낮은 전기저항값을 유지할 수 없게 되는 경우가 있다. 이와 같이, Cu를 주도전층으로 하는 적층 배선막의 피복층에는, 새로이 다양한 환경에 적용할 수 있는 높은 내습성이나 내산화성과 낮은 전기저항값의 유지가 요구되고 있다. In addition, the heating temperature during the TFT manufacturing process tends to increase for the large screen and high-speed driving of the FPD. For this reason, in the laminated wiring film in which Cu which is the main conductive layer, and the coating layer which becomes a barrier film or an adhesion film, the thermal diffusion of the atoms which comprise a coating layer to Cu advances, and it may become unable to maintain a low electric resistance value. As described above, the coating layer of the laminated wiring film containing Cu as the main conductive layer is required to maintain high moisture resistance, oxidation resistance and low electrical resistance value that can be newly applied to various environments.
본 발명의 목적은, 내습성이나 내산화성을 개선하고, 또한, 저저항의 주도전층인 Cu와 적층했을 때, 가열공정을 거쳐도 낮은 전기저항값을 유지할 수 있는, Mo 합금으로 되는 피복층을 사용한 전자부품용 적층 배선막 및 피복층을 형성하기 위한 스퍼터링 타겟재를 제공하는 것에 있다. An object of the present invention is to use a coating layer made of an Mo alloy capable of improving moisture resistance and oxidation resistance and maintaining a low electrical resistance value even after a heating step when laminated with Cu, which is a low resistance main conductive layer. It is providing the sputtering target material for forming the laminated wiring film for electronic components, and a coating layer.
본 발명자는, 상기 과제를 감안하여, 새로이 Mo에 첨가하는 원소의 최적화에 몰두하였다. 그 결과, Mo에 특정량의 Ni와 Ti를 복합 첨가함으로써, 내습성, 내산화성을 향상시키는 동시에, 주도전층인 Cu의 피복층으로 했을 때 가열공정을 거쳐도 낮은 전기저항값을 유지할 수 있는 것을 발견하고, 본 발명에 도달하였다.MEANS TO SOLVE THE PROBLEM In view of the said subject, this inventor focused on the optimization of the element added to Mo newly. As a result, it was found that by adding a specific amount of Ni and Ti to Mo, the moisture resistance and the oxidation resistance were improved, and the low electrical resistance value was maintained even after the heating step when the coating layer of Cu as the main conductive layer was used. And the present invention was reached.
즉, 본 발명은, 기판 상에 금속막을 형성한 전자부품용 적층 배선막에 있어서, Cu를 주성분으로 하는 주도전층과 그 도전층의 한쪽 면 및/또는 다른 쪽 면을 덮는 피복층으로 되고, 그 피복층은 원자비에 있어서의 조성식이 Mo100-x-y-Nix-Tiy, 10≤x≤50, 3≤y≤30, x+y≤53으로 표시되며, 잔부가 불가피적 불순물로 되는 전자부품용 적층 배선막의 발명이다. In other words, the present invention provides a multilayer wiring film for an electronic component in which a metal film is formed on a substrate, which is a coating layer covering one surface and / or the other surface of the main conductive layer containing Cu as a main component and the conductive layer, and the coating layer. The composition formula in the silver atomic ratio is represented by Mo 100-xy -Ni x -Ti y , 10≤x≤50, 3≤y≤30, x + y≤53, and the balance is for electronic components whose inevitable impurities It is an invention of a laminated wiring film.
또한, 본 발명에서는, 상기 조성식의 x, y를, 각각 20≤x≤30, 9≤y≤20으로 하는 것이 더욱 바람직하다. Moreover, in this invention, it is further more preferable to make x and y of the said composition formula into 20 <= <= 30 and 9 <= y <= 20, respectively.
또한, 본 발명은, 상기 피복층을 형성하기 위한 스퍼터링 타겟재로서, 원자비에 있어서의 조성식이 Mo100-x-y-Nix-Tiy, 10≤x≤50, 3≤y≤30, x+y≤53으로 표시되고, 잔부가 불가피적 불순물로 되는 Mo 합금으로 구성된 피복층 형성용 스퍼터링 타겟재의 발명이다. In addition, the present invention provides a sputtering target material for forming the coating layer, the composition formula of the atomic ratio of Mo 100-xy -Ni x -Ti y , 10≤x≤50, 3≤y≤30, x + y The invention is an invention of a sputtering target material for forming a coating layer, which is represented by?
또한, 본 발명에서는, 상기 조성식의 x, y가, 각각 20≤x≤30, 9≤y≤20인 것이 바람직하다.Moreover, in this invention, it is preferable that x and y of the said composition formula are 20 <= x <= 30 and 9 <= y <= 20, respectively.
본 발명의 전자부품용 적층 배선막은, 내습성, 내산화성을 향상시킬 수 있다. 또한, Cu와 적층했을 때의 가열공정에 있어서도, 전기저항값의 증가를 억제하여, 낮은 전기저항값을 유지할 수 있다. 이것에 의해, 각종 전자부품, 예를 들면 수지기판 상에 형성하는 FPD 등의 배선막에 사용함으로써, 전자부품의 안정 제조나 신뢰성 향상에 크게 공헌할 수 있는 이점을 갖는 것으로, 전자부품의 제조에 꼭 필요한 기술이 된다. 특히, 터치패널이나 수지기판을 사용하는 플렉시블한 FPD에 대해 매우 유용한 적층 배선막이 된다. 이들 제품에서는, 특히 내습성, 내산화성이 매우 중요하기 때문이다. The laminated wiring film for electronic components of this invention can improve moisture resistance and oxidation resistance. Moreover, also in the heating process at the time of laminating | stacking with Cu, increase of an electrical resistance value can be suppressed and low electrical resistance value can be maintained. Thereby, it is used for wiring films, such as FPD formed on various electronic components, for example, a resin substrate, and has the advantage that it can greatly contribute to the stable manufacture and reliability improvement of an electronic component, and is used for manufacture of an electronic component. It is a necessary skill. In particular, it is a very useful laminated wiring film for a flexible FPD using a touch panel or a resin substrate. These products are particularly important in moisture resistance and oxidation resistance.
도 1은 본 발명의 전자부품용 적층 배선막의 단면 모식도이다.BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic cross section of the laminated wiring film for electronic components of this invention.
본 발명의 전자부품용 적층 배선막의 단면 모식도를 도 1에 나타낸다. 본 발명의 전자부품용 적층 배선막은, Cu를 주성분으로 하는 주도전층(3)의 한쪽 면 및/또는 다른 쪽 면을 덮는 피복층(2), (4)으로 되고, 예를 들면 기판(1) 상에 형성된다. 도 1에서는 주도전층(3)의 양면에 피복층(2), (4)을 형성하고 있는데, 한쪽 면만을 덮어도 되고, 적절히 선택할 수 있다. 또한, 주도전층의 한쪽 면만을 본 발명의 피복층으로 덮는 경우에는, 주도전층의 다른 쪽 면에는 전자부품의 용도에 따라, 본 발명과는 다른 조성의 피복층으로 덮을 수 있다. The schematic cross-sectional view of the multilayer wiring film for electronic components of this invention is shown in FIG. The multilayer wiring film for an electronic component of the present invention is composed of coating layers (2) and (4) covering one side and / or the other side of the main conductive layer 3 containing Cu as a main component, for example, on the substrate 1. Is formed. In FIG. 1, although the coating layers 2 and 4 are formed in both surfaces of the main conductive layer 3, only one surface may be covered and it can select suitably. In addition, when only one side of the main conductive layer is covered with the coating layer of the present invention, the other side of the main conductive layer can be covered with a coating layer having a composition different from the present invention, depending on the use of the electronic component.
본 발명의 중요한 특징은, 도 1에 나타내는 전자부품용 적층 배선막의 피복층에 있어서, Mo에 대해 Ni와 Ti를 특정량 복합 첨가함으로써, 내습성, 내산화성을 향상시켜, Cu막과의 적층시의 가열공정에 있어서 낮은 전기저항값을 유지할 수 있는 새로운 Mo 합금을 발견한 점에 있다. 이하, 본 발명의 전자부품용 배선막에 대해서 상세하게 설명한다. An important feature of the present invention is that in the coating layer of the multilayer wiring film for electronic parts shown in Fig. 1, by adding a specific amount of Ni and Ti to Mo, the moisture resistance and the oxidation resistance are improved, and at the time of lamination with the Cu film In the heating process, a new Mo alloy can be found that can maintain a low electrical resistance value. EMBODIMENT OF THE INVENTION Hereinafter, the wiring film for electronic components of this invention is demonstrated in detail.
또한, 이하의 설명에 있어서 「내습성」이란, 고온고습 환경하에 있어서의 배선막의 전기저항값의 변화가 일어나기 어려움을 말하는 것으로 한다. 또한, 「내산화성」이란, 고온 환경하에 있어서의 전기적 콘택트성이 열화되기 어려움을 말하고, 배선막의 변색에 의해 확인할 수 있으며, 예를 들면 반사율에 의해 정량적으로 평가할 수 있다. In addition, in the following description, "moisture resistance" shall mean the change of the electrical resistance value of a wiring film in a high temperature, high humidity environment hardly to occur. In addition, "oxidation resistance" refers to the difficulty in deteriorating the electrical contact property in a high temperature environment, can be confirmed by the discoloration of the wiring film, for example, can be quantitatively evaluated by reflectance.
본 발명의 전자부품용 적층 배선막의 피복층을 형성하는 Mo 합금에 Ni를 첨가하는 이유는, 피복층의 내산화성의 향상에 있다. 순Mo는, 대기중에서 가열하면 막 표면이 산화되어 버려, 전기적 콘택트성이 열화되어 버린다. 본 발명의 전자부품용 적층 배선막의 피복층은, Mo에 Ni를 특정량 첨가함으로써 내산화성을 향상시킬 수 있어, 전기적 콘택트성의 열화를 억제하는 효과를 갖는다. 그 효과는, Ni의 첨가량이 10 원자% 이상에서 현저해진다. The reason why Ni is added to the Mo alloy forming the coating layer of the multilayer wiring film for electronic parts of the present invention is to improve the oxidation resistance of the coating layer. When pure Mo is heated in the air, the surface of the film is oxidized, and electrical contact property is deteriorated. The coating layer of the multilayer wiring film for electronic parts of this invention can improve oxidation resistance by adding Ni to specific amount, and has the effect which suppresses deterioration of electrical contact property. The effect becomes remarkable when the amount of Ni added is 10 atomic% or more.
한편, Ni는, Mo보다 Cu에 대해 열확산되기 쉬운 원소이다. Mo로의 Ni의 첨가량이 50 원자%를 초과하면, FPD 등의 전자부품을 제조할 때의 가열공정에 있어서, 피복층의 Ni가 용이하게 주도전층의 Cu로 확산되어 버려, 낮은 전기저항값을 유지하기 어려워진다. 이 때문에, Ni의 첨가량은 10~50 원자%로 한다. 또한, 주도전층의 Cu에 피복층을 형성하고, 350℃보다 고온에서 가열하는 경우에는, 피복층의 Ni가 주도전층의 Cu로 확산되기 쉬워져, 전기저항값이 상승하는 경우가 있다. 본 발명에서 낮은 전기저항값을 유지하기 위해서는, Ni 첨가량을 30 원자% 이하로 하는 것이 바람직하다. On the other hand, Ni is an element that is more likely to thermally diffuse with respect to Cu than Mo. When the amount of Ni added to Mo exceeds 50 atomic%, in the heating step in manufacturing electronic parts such as FPD, Ni in the coating layer easily diffuses into Cu in the main conductive layer, so as to maintain a low electrical resistance value. Becomes difficult. For this reason, Ni addition amount shall be 10-50 atomic%. In addition, when a coating layer is formed in Cu of a main conductive layer, and it heats at higher temperature than 350 degreeC, Ni of a coating layer becomes easy to diffuse into Cu of a main conductive layer, and an electrical resistance value may increase. In order to maintain low electric resistance value in this invention, it is preferable to make Ni addition amount into 30 atomic% or less.
본 발명의 전자부품용 적층 배선막의 피복층을 형성하는 Mo 합금에 Ti를 첨가하는 이유는, 내습성을 향상시키기 위함이다. Ti는, 산소나 질소와 결합하기 쉬운 성질을 갖는 금속으로, 고온고습 분위기에서는 표면에 부동태막을 형성하여 배선막 내부를 보호하는 효과를 갖는다. 이 때문에, 본 발명의 전자부품용 적층 배선막의 피복층은, Mo에 Ti를 특정량 첨가함으로써 내습성을 대폭 향상시키는 것이 가능해진다. 이 효과는, 3 원자% 이상에서 현저해진다. The reason for adding Ti to the Mo alloy forming the coating layer of the multilayer wiring film for electronic parts of the present invention is to improve moisture resistance. Ti is a metal having a property of being easily bonded to oxygen or nitrogen, and has an effect of protecting the inside of the wiring film by forming a passivation film on the surface in a high temperature and high humidity atmosphere. For this reason, the coating layer of the multilayer wiring film for electronic components of this invention can significantly improve moisture resistance by adding Ti to specific amount. This effect becomes remarkable at 3 atomic% or more.
한편, Ti의 첨가량이 30 원자%를 초과하면, 내식성이 지나치게 향상되어 Cu용 에천트(etchant)로의 에칭속도가 저하되어, 주도전층의 Cu와의 적층막의 에칭시에 잔사가 생기거나, 에칭이 불가능해지거나 한다. 이 때문에, 본 발명에서는, Ti의 첨가량은 3~30 원자%로 한다.On the other hand, when the added amount of Ti exceeds 30 atomic%, the corrosion resistance is excessively improved, and the etching rate to the etchant for Cu is lowered, resulting in residue during etching of the laminated film with Cu of the main conductive layer, or etching is impossible. Or terminate. For this reason, in this invention, the addition amount of Ti shall be 3-30 atomic%.
또한, 종래의 Mo-Nb 합금보다 높은 내습성을 안정적으로 얻는 데는, Ti의 첨가량은 9 원자% 이상이 바람직하다. 또한, Cu의 에천트로 보다 안정적으로 에칭을 하는 데는, Ti의 첨가량은 20 원자% 이하가 바람직하다. Further, in order to stably obtain higher moisture resistance than conventional Mo-Nb alloys, the amount of Ti added is preferably 9 atomic% or more. In addition, in order to etch more stably with the etchant of Cu, 20 atomic% or less of Ti addition amount is preferable.
또한, 주도전층인 Cu의 한쪽 면 및/또는 다른 쪽 면에 피복층을 형성하고, 제조공정 중의 가열온도가 350℃로 고온인 경우에 대응하는 데는, 피복층을 형성하는 Mo 합금에 복합 첨가하는 Ni와 Ti의 총합을 53 원자% 이하로 한다. 그 이유는, Ni뿐 아니라 Ti도 Cu로 열확산되는 원소로, Ni와 Ti의 총합이 53 원자%를 초과하면, Ni나 Ti가 주도전층의 Cu층으로 확산되어, 낮은 전기저항값을 유지하기 어려워지기 때문이다. In addition, when a coating layer is formed on one side and / or the other side of Cu which is a main conductive layer, and the heating temperature in a manufacturing process is 350 degreeC high temperature, Ni and the composite compound added to the Mo alloy which forms a coating layer The sum total of Ti is 53 atomic% or less. The reason is that not only Ni but also Ti is thermally diffused into Cu. When the total amount of Ni and Ti exceeds 53 atomic%, Ni or Ti diffuses into the Cu layer of the main electrode layer, making it difficult to maintain low electrical resistance. For losing.
또한, 피복층을 형성하는 Mo 합금 중에 복합 첨가한 Ni와 Ti는, 원자비로 Ni/Ti가 1 이상인 것이 바람직하다. 전술한 바와 같이, Ti는 내습성 향상에 관여하는 원소인데, 내산화성은 저하되기 때문에, 본 발명자의 검토에 의하면, Ni의 첨가량보다 Ti의 첨가량이 많은 경우에는, 내산화성의 향상효과를 얻기 어려워진다. 이 때문에, Ni와 Ti의 원자비로 1 이상이 되도록 각각 첨가함으로써, 피복층의 내습성과 내산화성을 안정적으로 얻는 것이 가능해진다. In addition, it is preferable that Ni / Ti composite-added in the Mo alloy which forms a coating layer has Ni / Ti 1 or more by atomic ratio. As described above, Ti is an element involved in improving moisture resistance, and since oxidation resistance is lowered, according to the inventors' study, it is difficult to obtain an effect of improving oxidation resistance when the amount of Ti added is larger than the amount of Ni added. Lose. For this reason, it is possible to stably obtain the moisture resistance and the oxidation resistance of the coating layer by adding each so that it becomes 1 or more by the atomic ratio of Ni and Ti.
본 발명의 전자부품용 적층 배선막에 있어서, 낮은 전기저항값과 내습성이나 내산화성을 안정적으로 얻는 데는, 주도전층의 막두께를 100~1000 nm로 하는 것이 바람직하다. 주도전층의 막두께가 100 nm보다 얇아지면, 박막 특유의 전자 산란의 영향으로 전기저항값이 증가하기 쉬워진다. 한편, 주도전층의 막두께가 1000 nm보다 두꺼워지면, 막을 형성하기 위해 시간이 걸리거나, 막응력에 의해 기판에 휨이 발생하기 쉬워지거나 한다. In the multilayer wiring film for an electronic component of the present invention, in order to stably obtain a low electric resistance value, moisture resistance and oxidation resistance, it is preferable to set the film thickness of the main electrode layer to 100 to 1000 nm. When the thickness of the main electrode layer becomes thinner than 100 nm, the electrical resistance value tends to increase due to the electron scattering characteristic of the thin film. On the other hand, when the film thickness of the main conductive layer becomes thicker than 1000 nm, it takes time to form a film, or warpage is likely to occur in the substrate due to film stress.
또한, Cu를 주성분으로 하는 주도전층은, 순Cu가 가장 낮은 전기저항값을 얻을 수 있다. 또한, 내열성, 내식성 등의 신뢰성을 고려하여, Cu에 전이금속이나 반금속 등을 첨가한 Cu 합금을 사용해도 된다. 이때, 가능한 한 낮은 전기저항값이 얻어지도록, Cu로의 첨가 원소의 첨가량은 5 원자% 이하가 바람직하다. In addition, in the main conductive layer containing Cu as a main component, the electrical resistance value with the lowest pure Cu can be obtained. Moreover, in consideration of reliability, such as heat resistance and corrosion resistance, you may use Cu alloy which added transition metal, semimetal, etc. to Cu. At this time, the addition amount of the additional element to Cu is preferably 5 atomic% or less so that the electric resistance value as low as possible is obtained.
또한, 본 발명의 전자부품용 적층 배선막에 있어서, 낮은 전기저항값과 내습성이나 내산화성을 안정적으로 얻는 데는, 피복층의 막두께를 20~100 nm로 하는 것이 바람직하다. 피복층의 막두께가 20 nm 미만에서는, Mo 합금막의 연속성이 낮아져 버려, 상기 특성을 충분히 얻을 수 없는 경우가 있다. 한편, 피복층의 막두께가 100 nm를 초과하면, 피복층의 전기저항값이 높아져 버려, 주도전층의 Cu막과 적층했을 때, 전자부품용 적층 배선막으로서 낮은 전기저항값을 얻기 어려워진다. Moreover, in the laminated wiring film for electronic components of this invention, in order to acquire low electric resistance value, moisture resistance, and oxidation resistance stably, it is preferable to make the film thickness of a coating layer into 20-100 nm. If the film thickness of the coating layer is less than 20 nm, the continuity of the Mo alloy film may be low, and the above characteristics may not be sufficiently obtained. On the other hand, when the film thickness of the coating layer exceeds 100 nm, the electrical resistance value of the coating layer becomes high, and when laminated with the Cu film of the main conductive layer, it becomes difficult to obtain a low electrical resistance value as the multilayer wiring film for electronic components.
또한, 본 발명에 있어서, 350℃ 이상의 고온에서 대기 가열했을 때에, 주도전층의 Cu의 산화에 의한 전기저항값의 증가를 억제하는 데는, 피복층의 막두께는 30 nm 이상이 바람직하다. 또한, 350℃ 이상의 고온에서 가열했을 때의 주도전층의 Cu로의 원자 확산에 의한 전기저항값의 증가를 억제하는 데는, 피복층의 막두께는 70 nm 이하가 바람직하다. 이 때문에, 본 발명에서는, 피복층의 막두께를 30~70 nm로 하는 것이 보다 바람직하다.In the present invention, the film thickness of the coating layer is preferably 30 nm or more in order to suppress an increase in the electrical resistance value due to oxidation of Cu in the main electrode layer when the air is heated at a high temperature of 350 ° C. or higher. Moreover, in order to suppress the increase of the electrical resistance value by the atomic diffusion of the main conductive layer into Cu when heated at 350 degreeC or more, 70 nm or less is preferable for the film thickness of a coating layer. For this reason, in this invention, it is more preferable to make the film thickness of a coating layer into 30-70 nm.
본 발명의 전자부품용 적층 배선막의 각층을 형성하는 데는, 스퍼터링 타겟을 사용한 스퍼터링법이 매우 적합하다. 피복층을 형성할 때는, 예를 들면 피복층의 조성과 동일 조성의 Mo 합금 스퍼터링 타겟을 사용하여 성멱하는 방법이나, Mo-Ni 합금 스퍼터링 타겟과 Mo-Ti 스퍼터링 타겟을 사용하여 코스퍼터링에 의해 성막하는 방법 등을 적용할 수 있다. 스퍼터링의 조건 설정의 간이함이나, 목적하는 조성의 피복층을 얻기 쉽다는 점에서는, 피복층의 조성과 동일 조성의 Mo 합금 스퍼터링 타겟을 사용해서 스퍼터링 성막하는 것이 가장 바람직하다. The sputtering method using a sputtering target is very suitable for forming each layer of the multilayer wiring film for electronic components of this invention. When forming the coating layer, for example, a method is formed using a Mo alloy sputtering target having the same composition as that of the coating layer, or a method is formed by coasting using a Mo-Ni alloy sputtering target and a Mo-Ti sputtering target. Etc. can be applied. It is most preferable to sputter-film-form using the Mo alloy sputtering target of the same composition as the composition of a coating layer from the point of simplicity of the sputtering condition setting, and the easy to obtain coating layer of a desired composition.
따라서, 본 발명의 전자부품용 적층 배선막의 피복층을 형성하는 데는, 원자비에 있어서의 조성식이 Mo100-x-y-Nix-Tiy, 10≤x≤50, 3≤y≤30, x+y≤53으로 표시되고, 잔부가 불가피적 불순물로 되는 스퍼터링 타겟을 사용함으로써, 안정하게 피복층을 형성할 수 있다. Therefore, There forming a coating layer laminated wiring film for an electronic component of the present invention, a composition formula in the atomic ratio Mo 100-xy -Ni x -Ti y , 10≤x≤50, 3≤y≤30, x + y The coating layer can be stably formed by using a sputtering target represented by? 53 and the remainder being an unavoidable impurity.
또한, 전술한 바와 같이, 350℃라는 고온의 가열공정이 되는 경우에도 낮은 전기저항값의 전자부품용 적층 배선막을 얻는 데는, Ni를 20~30 원자%, Ti를 9~20 원자% 함유시키는 것이 바람직하다.In addition, as described above, in order to obtain a multilayer wiring film for an electronic component having a low electrical resistance even in a high temperature heating step of 350 ° C, it is necessary to contain 20 to 30 atomic% of Ni and 9 to 20 atomic% of Ti. desirable.
본 발명의 피복층 형성용 스퍼터링 타겟재의 제조방법으로서는, 예를 들면 분말 소결법이 적용 가능하다. 분말 소결법에서는, 예를 들면 가스 아토마이즈법으로 합금 분말을 제조하여 원료 분말로 하는 것이나, 복수의 합금 분말이나 순금속 분말을 본 발명의 최종 조성이 되도록 혼합한 혼합 분말을 원료 분말로 하는 것이 가능하다. 원료 분말의 소결방법으로서는, 열간 정수압 프레스, 핫 프레스, 방전 플라즈마 소결, 압출 프레스 소결 등의 가압 소결을 사용하는 것이 가능하다.As a manufacturing method of the sputtering target material for coating layer formation of this invention, the powder sintering method is applicable, for example. In the powder sintering method, for example, an alloy powder may be produced by a gas atomization method to be a raw material powder, or a mixed powder obtained by mixing a plurality of alloy powders or pure metal powders to form the final composition of the present invention may be used as a raw material powder. . As the sintering method of the raw material powder, it is possible to use pressure sintering such as hot hydrostatic press, hot press, discharge plasma sintering, extrusion press sintering and the like.
본 발명의 전자부품용 적층 배선막의 피복층을 형성하는 Mo 합금에 있어서, 내산화성, 내습성을 확보하기 위해 필수 원소인 Ni, Ti 이외의 잔부를 차지하는 Mo 이외의 불가피적 불순물 함유량은 적은 것이 바람직하나, 본 발명의 작용을 손상시키지 않는 범위에서, 가스성분인 산소, 질소나 탄소, 전이금속인 Fe, Cu, 반금속인 Al, Si 등의 불가피적 불순물을 포함해도 된다. 예를 들면, 가스성분인 산소, 질소는 각각 1000 질량 ppm 이하, 탄소는 200 질량 ppm 이하, Fe, Cu는 200 질량 ppm 이하, Al, Si는 100 질량 ppm 이하 등이고, 가스성분을 제거한 순도로서 99.9 질량% 이상인 것이 바람직하다. In the Mo alloy forming the coating layer of the multilayer wiring film for electronic parts of the present invention, in order to ensure oxidation resistance and moisture resistance, it is preferable that the content of inevitable impurities other than Mo which occupies the remainder other than Ni and Ti which are essential elements is preferable. Unavoidable impurities, such as oxygen, nitrogen, carbon, a transition metal, Fe, Cu, and a semimetal, Al, Si, etc. may be included in the range which does not impair the effect | action of this invention. For example, oxygen and nitrogen as gas components are each 1000 mass ppm or less, carbon is 200 mass ppm or less, Fe and Cu are 200 mass ppm or less, and Al and Si are 100 mass ppm or less, respectively. It is preferable that it is mass% or more.
[실시예 1]Example 1
이하의 실시예를 들어 본 발명을 상세하게 설명한다. The present invention will be described in detail with reference to the following examples.
먼저, 피복층이 되는 Mo-Ni-Ti 합금막을 형성하기 위한 스퍼터링 타겟재를 제작하였다. 평균 입경 6 ㎛의 Mo 분말과 평균 입경 100 ㎛의 Ni 분말과 평균 입경 150 ㎛의 Ti 분말을 소정의 조성이 되도록 혼합하고, 연강제의 캔에 충전한 후, 가열하면서 진공 배기하여 캔 내의 가스분을 제거한 후에 봉지(封止)하였다. 다음으로, 봉지한 캔을 열간 정수압 프레스장치에 넣고, 800℃, 120 MPa, 5시간의 조건으로 소결시킨 후에, 기계 가공에 의해, 직경 100 ㎜, 두께 5 ㎜의 스퍼터링 타겟재를 제작하였다. 또한, 비교가 되는 Mo, Mo-Nb, Mo-Ni 스퍼터링 타겟재도 동일하게 제작하였다. 또한, Cu 타겟재는, 히타치 덴센 가부시키가이샤 제조의 무산소동의 판재로부터 잘라내어 제작하였다. First, the sputtering target material for forming Mo-Ni-Ti alloy film used as a coating layer was produced. Mo powder having an average particle diameter of 6 µm, Ni powder having an average particle diameter of 100 µm, and Ti powder having an average particle diameter of 150 µm are mixed so as to have a predetermined composition, filled into a can of mild steel, and then evacuated by heating under vacuum to heat the gas powder in the can. After removal, sealing was carried out. Next, the sealed can was put in a hot hydrostatic press apparatus and sintered under conditions of 800 ° C., 120 MPa and 5 hours, and then a sputtering target material having a diameter of 100 mm and a thickness of 5 mm was produced by machining. In addition, Mo, Mo-Nb, and Mo-Ni sputtering target materials to be compared were similarly produced. In addition, Cu target material was cut out and produced from the board | plate material of the oxygen-free copper made by Hitachi Densen Corporation.
상기에서 얻은 각 스퍼터링 타겟재를 동제(銅製)의 백킹 플레이트에 브레이징하여 스퍼터링장치에 장착하였다. 스퍼터장치는, 캐논 아네르바 가부시키가이샤 제조의 SPF-440H를 사용하였다. Each sputtering target material obtained above was brazed to a copper backing plate and mounted on a sputtering apparatus. The sputtering apparatus used SPF-440H by Canon Anerba Corporation.
25 ㎜×50 ㎜의 유리기판 상에, 표 1에 나타내는 소정량의 Ni 및 Ti를 첨가한 피복층인 Mo 합금막, 그 상면에 주도전층인 Cu막, 추가로 그 상면에 Mo 합금막을, 각각 표 1에 나타내는 막두께 구성으로 스퍼터링법으로 형성하여, 전자부품용 적층 배선막을 얻었다. 또한, 비교를 위해, 순Mo, Mo-Ni 합금막, Mo-Nb 합금막을, 각각 Cu막과 적층하여, 적층 배선막도 제작하였다. On the 25 mm x 50 mm glass substrate, the Mo alloy film which is the coating layer which added the predetermined amount of Ni and Ti shown in Table 1, the Cu film which is the main conductive layer on the upper surface, and the Mo alloy film on the upper surface, respectively are shown It formed by the sputtering method with the film thickness structure shown in 1, and obtained the laminated wiring film for electronic components. In addition, for comparison, a pure Mo, a Mo-Ni alloy film, and a Mo-Nb alloy film were respectively laminated with a Cu film, and a laminated wiring film was also produced.
내산화성의 평가로서는, 대기중에서 250℃, 350℃에서 1시간 가열한 후의 반사율과 전기저항값의 변화를 측정하였다. 반사율의 측정에는, 코니카 미놀타 제조의 분광 측색계 CM-2500d를 사용하여, 가시광역의 반사 특성을 측정하였다. 또한, 전기저항값은, 가부시키가이샤 다이아 인스트루먼츠 제조의 4단자 박막 저항률 측정기 MCP-T400을 사용해서 측정하였다. 그 결과를 표 1에 나타낸다.As evaluation of oxidation resistance, the change of reflectance and electric resistance value after heating at 250 degreeC and 350 degreeC for 1 hour in air | atmosphere was measured. The reflectance of visible light was measured for the reflectance measurement using the spectrophotometer CM-2500d by Konica Minolta. In addition, the electrical resistance value was measured using the 4-terminal thin-film resistivity meter MCP-T400 by the Diamond Instruments Corporation. The results are shown in Table 1.
표 1에 나타내는 바와 같이, 주도전층의 Cu막 단체에서는, 대기중에서 250℃ 이상 가열하면 산화되어 버려, 반사율은 크게 저하되고, 전기저항값의 측정이 불가능하였다. 또한, 비교예의 Mo 합금과 Cu의 적층 배선막의 반사율은, 대기중에서 가열하면 저하되는 경향이 있었다. 특히, 순Mo나 Mo-10 원자% Nb의 적층 배선막의 반사율은, 대기중 350℃에서 가열하면, 크게 저하되어, 내산화성이 낮은 것을 확인하였다. 또한, 전기저항값은 250℃까지는 낮은 값을 유지할 수 있으나 350℃에서는 크게 증가하여, 산소가 피복층을 투과해 버려, Cu막이 산화되어 있다고 생각된다. As shown in Table 1, in the Cu film alone of the main conductive layer, when heated to 250 ° C. or higher in the air, the oxide became oxidized, the reflectance was greatly reduced, and the electrical resistance value could not be measured. In addition, the reflectance of the laminated wiring film of Mo alloy and Cu of the comparative example tended to decrease when heated in the air. In particular, when the reflectance of the laminated wiring film of pure Mo or Mo-10 atomic% Nb was heated at 350 ° C. in the air, it was confirmed that the reflectance was greatly lowered and the oxidation resistance was low. In addition, the electrical resistance value can be maintained at a low value up to 250 ° C., but increases significantly at 350 ° C., and oxygen is permeated through the coating layer, and the Cu film is considered to be oxidized.
또한, 비교예의 Mo-35 원자% Ti의 적층막은, 350℃에서는 반사율이 크게 저하되고, 전기저항값도 증가하여, Ti를 첨가하는 것만으로는 내산화성을 충분히 개선할 수 없는 것을 확인하였다. In addition, in the laminated film of Mo-35 atomic% Ti of the comparative example, the reflectance was greatly lowered at 350 ° C, the electrical resistance value was also increased, and it was confirmed that the oxidation resistance could not be sufficiently improved only by adding Ti.
이에 대해, 본 발명의 피복층에, Mo에 Ni와 Ti를 소정량 첨가한 Mo-Ni-Ti 합금의 반사율은, 350℃의 대기중에서 가열해도, 그 저하는 적어, 내산화성을 크게 개선할 수 있는 것을 확인할 수 있었다. 또한, 본 발명의 피복층에, Mo에 Ni와 Ti를 소정량 첨가한 Mo-Ni-Ti 합금의 전기저항값은, 350℃의 대기중에서 가열해도, 그 증가가 적어, 내산화성을 크게 개선할 수 있는 것을 확인할 수 있었다. 그 개선효과는, Ni를 20 원자% 이상, Ti를 3 원자% 이상 첨가함으로써 명확해져, 전자부품에 매우 적합한 적층 배선막인 것을 확인할 수 있었다. On the other hand, even if the reflectance of the Mo-Ni-Ti alloy which added Ni and Ti to Mo in the coating layer of this invention is heated in 350 degreeC air | atmosphere, the fall is small, and oxidation resistance can be improved significantly. I could confirm that. In addition, the electrical resistance value of the Mo-Ni-Ti alloy in which Ni and Ti are added to Mo in the coating layer of the present invention is small, even if heated in an air at 350 ° C, and the oxidation resistance can be greatly improved. I could confirm that there is. The improvement effect became clear by adding 20 atomic% or more of Ni and 3 atomic% or more of Ti, and confirmed that it was a laminated wiring film which is very suitable for an electronic component.
[실시예 2][Example 2]
실시예 1에서 제작한 일부의 적층 배선막을 선정하여, 내습성의 평가로서 85℃×85%의 고온고습 분위기에 50시간, 100시간, 200시간, 300시간 방치했을 때의 반사율의 변화를 측정하였다. 그 결과를 표 2에 나타낸다.A part of the laminated wiring film produced in Example 1 was selected, and the change in reflectance when left for 50 hours, 100 hours, 200 hours, and 300 hours in a high temperature and high humidity atmosphere at 85 ° C. × 85% was measured for evaluation of moisture resistance. . The results are shown in Table 2.
표 2에 나타내는 바와 같이, 비교예의 피복층에 순Mo나 Mo-10 Nb, Mo-Ni 합금을 사용한 적층 배선막은, 고온고습 분위기에 방치하면, 반사율이 크게 저하되고, 전기저항값이 증가하는 것을 확인하였다. 특히, 피복층에 Mo-Ni 합금을 사용한 것은, Ni의 첨가량이 증가하면, 그 경향이 보다 현저해져 내습성이 낮은 것을 알 수 있다.As shown in Table 2, when the laminated wiring film which used pure Mo, Mo-10Nb, and Mo-Ni alloy for the coating layer of a comparative example is left to stand in high temperature, high humidity atmosphere, it confirmed that a reflectance fell significantly and an electrical resistance value increased. It was. In particular, the use of a Mo-Ni alloy for the coating layer shows that the tendency becomes more remarkable when the amount of Ni is increased, and the moisture resistance is low.
이에 대해, 본 발명의 피복층에 Mo에 Ni와 Ti를 소정량 첨가한 적층 배선막의 반사율은, 고온고습 분위기에 방치 후에도 반사율의 저하를 억제할 수 있고, 또한 낮은 전기저항값을 유지하고 있어, 내습성을 크게 개선한 것을 확인할 수 있었다. 그 개선효과는, Ti 첨가량이 3 원자% 이상에서 명확해지고, 9 원자%에서 내습성은 크게 개선되는 것을 확인할 수 있었다.On the other hand, the reflectance of the laminated wiring film in which Ni and Ti were added in a predetermined amount to Mo in the coating layer of the present invention can suppress a decrease in reflectance even after standing in a high temperature, high humidity atmosphere, and maintains a low electrical resistance value. It was confirmed that the behavior was greatly improved. The improvement effect was evident at 3 atomic% or more, and it was confirmed that moisture resistance was greatly improved at 9 atomic%.
[실시예 3][Example 3]
다음으로, 실시예 1에서 제작한 일부의 적층 배선막을 선정하여, 진공중에서 가열처리했을 때의 전기저항값의 변화에 대해서 검토를 행하였다. 가열온도는 250℃, 350℃, 450℃에서 1시간 가열하였다. 측정결과를 표 3에 나타낸다.Next, a part of the laminated wiring film produced in Example 1 was selected, and the change of the electrical resistance value at the time of heat processing in vacuum was examined. Heating temperature was heated at 250 degreeC, 350 degreeC, and 450 degreeC for 1 hour. The measurement results are shown in Table 3.
표 3에 나타내는 바와 같이, 비교예의 Ni의 첨가량이 50 원자%를 초과하거나, Ni나 Ti 첨가량이 50 원자%를 초과하면, 높은 온도일수록 특히 350℃ 이상에서의 전기저항값이 증가하는 것을 확인하였다.As shown in Table 3, when the addition amount of Ni of the comparative example exceeds 50 atomic% or the Ni or Ti addition amount exceeds 50 atomic%, it was confirmed that the higher the temperature, the higher the electrical resistance value, especially at 350 ° C or higher. .
이에 대해, 본 발명의 적층 배선막은, 피복층의 Ni와 Ti의 첨가량의 총량을 50 원자% 이하로 함으로써, 가열시에 있어서의 전기저항값의 증가를 억제할 수 있는 것을 확인할 수 있었다.On the other hand, the laminated wiring film of this invention confirmed that the increase of the electrical resistance value at the time of heating can be suppressed by making the total amount of the addition amount of Ni and Ti of a coating layer into 50 atomic% or less.
[실시예 4]Example 4
다음으로, 에칭성의 평가를 행하였다. 실시예 3에서 사용한 적층 배선막을 형성한 기판의 절반의 면적에만 포토레지스트 도포하여 건조시키고, 간토 가가쿠 가부시키가이샤 제조의 Cu용 에천트액에 침지하여, 미도포 부분을 에칭하였다. 그 후, 기판을 순수로 세정하고, 건조시켜, 용해 부분과 레지스트를 도포한 미용해 부분의 경계 근방을 광학현미경으로 관찰하였다. 그 결과를 표 3에 나타낸다.Next, the etching property was evaluated. Photoresist coating and drying were carried out only to the area | region of the half of the board | substrate with which the laminated wiring film used in Example 3 was formed, it was immersed in the etchant liquid for Cu manufactured by Kanto Chemical Co., Ltd., and the uncoated part was etched. Then, the board | substrate was wash | cleaned with pure water, it dried, and the vicinity of the boundary of the dissolution part and the undissolved part which apply | coated the resist was observed with the optical microscope. The results are shown in Table 3.
비교예의 Mo-Ni 합금과 Cu의 적층 배선막에서는, 경계 근방의 막이 들뜨고, 단부가 박리되어 있었다. 이것은, 주도전층의 Cu막과 유리기판 사이에 형성한 피복층의 Mo 합금막이 에칭되어 있다고 생각된다. 또한, 비교예의 피복층에 Mo-10 원자% Nb를 사용한 적층 배선막에서는, 잔사를 확인하였다. 이는, 주도전층의 Cu막이 오버에칭되어, 그 상부에 형성한 피복층의 Mo-10 원자% Nb 합금막이 들떠 있는 것처럼 보였다. In the laminated wiring film of Mo-Ni alloy and Cu of the comparative example, the film near the boundary was lifted and the end part was peeled off. It is considered that the Mo alloy film of the coating layer formed between the Cu film and the glass substrate of the main conductive layer is etched. In addition, in the laminated wiring film which used Mo-10 atomic% Nb for the coating layer of the comparative example, the residue was confirmed. This was because the Cu film of the main conductive layer was overetched and the Mo-10 atomic% Nb alloy film of the coating layer formed thereon appeared to be floating.
또한, 비교예의 Mo-35 원자% Ti나 Mo-10 원자% Ni-33 원자% Ti를 피복층으로 하면, 에칭을 행할 수 없어, 에칭성에 Ti의 첨가량이 크게 관여하고 있는 것을 확인하였다.Moreover, when Mo-35 atomic% Ti and Mo-10 atomic% Ni-33 atomic% Ti of the comparative example were used as a coating layer, etching could not be performed and it confirmed that the addition amount of Ti was largely involved in etching property.
이에 대해, 본 발명의 Mo에 특정량의 Ni와 Ti를 복합 첨가한 피복층에서는, 막 박리도 없고, 에칭되어 있는 것을 확인할 수 있었다. 다만, Ti의 첨가량이 22 원자% Mo 합금에서는 기판 상에 잔사가 확인되고 있어, 보다 안정적으로 에칭을 행하는 데는 Ti의 첨가량은 20 원자% 이하가 보다 바람직한 것을 확인하였다.On the other hand, in the coating layer which compositely added Ni and Ti of specific amount to Mo of this invention, it was confirmed that it is etched without film peeling. However, in the 22-atomic-% Mo alloy, the addition amount of Ti confirmed the residue on a board | substrate, and it confirmed that 20 atomic% or less was more preferable in order to carry out etching more stably.
이상과 같이, 내산화성, 내습성, 가열시의 전기저항값의 증가의 억제, 에칭성을 만족시키기 위해서는, Ni의 첨가량을 10~50 원자%, Ti의 첨가량을 3~30 원자%로 하는 것이 바람직한 것을 알 수 있다. 또한, 고온에서 내산화성, 전기저항값의 증가를 억제하여, 높은 에칭성을 확보하는 데는 Ni를 20~30 원자%, Ti를 9~20 원자%로 하는 것이 보다 바람직한 것을 알 수 있다. As mentioned above, in order to satisfy oxidation resistance, moisture resistance, suppression of the increase of the electrical resistance value at the time of heating, and etching property, it is preferable to make Ni addition amount into 10-50 atomic% and Ti addition amount into 3-30 atomic%. It can be seen that it is preferable. Moreover, it turns out that it is more preferable to set Ni as 20-30 atomic% and Ti as 9-20 atomic% in order to suppress the increase of oxidation resistance and electrical resistance value at high temperature, and to ensure high etching property.
[실시예 5][Example 5]
먼저, 피복층이 되는 Mo-20% Ni-15% Ti(원자%) 스퍼터링 타겟재를 제작하였다. 평균 입경 6 ㎛의 Mo 분말과 평균 입경 80 ㎛의 Ni 분말과 평균 입경 25 ㎛의 Ti 분말을 소정의 조성이 되도록 혼합하고, 연강제의 캔에 충전한 후, 가열하면서 진공 배기하여 캔 내의 가스분을 제거한 후에 봉지하였다. 다음으로, 봉지한 캔을 열간 정수압 프레스장치에 넣고, 800℃, 120 MPa, 5시간의 조건으로 소결시킨 후에, 기계 가공에 의해, 직경 100 ㎜, 두께 5 ㎜의 스퍼터링 타겟재를 제작하였다. First, Mo-20% Ni-15% Ti (atomic%) sputtering target material used as a coating layer was produced. Mo powder having an average particle diameter of 6 µm, Ni powder having an average particle diameter of 80 µm, and Ti powder having an average particle diameter of 25 µm are mixed so as to have a predetermined composition, filled into a can of mild steel, and then evacuated under heating while heating to form a gas powder in the can. It was sealed after removing. Next, the sealed can was put in a hot hydrostatic press apparatus and sintered under conditions of 800 ° C., 120 MPa and 5 hours, and then a sputtering target material having a diameter of 100 mm and a thickness of 5 mm was produced by machining.
상기에서 얻은 각 스퍼터링 타겟재를 동제의 백킹 플레이트에 브레이징하여 스퍼터링장치에 장착하였다. 스퍼터장치는, 캐논 아네르바 가부시키가이샤 제조의 SPF-440H를 사용하였다. Each sputtering target material obtained above was brazed to a copper backing plate and mounted on a sputtering apparatus. The sputtering apparatus used SPF-440H by Canon Anerba Corporation.
다음으로, 25 ㎜×50 ㎜의 유리기판 상에, 주도전층인 Cu막 및 피복층인 Mo-Ni-Ti막의 막두께를 변화시켜서 스퍼터링법에 의해, 표 4에 나타내는 바와 같은 막두께 구성의 전자부품용 적층 배선막을 형성하였다. 그 후, 실시예 1과 동일하게 대기중에서 가열처리했을 때의 반사율 및 전기저항값의 변화를 측정하였다. 그 결과를 표 4에 나타낸다.Next, on the 25 mm x 50 mm glass substrate, the electronic components of the film thickness structure as shown in Table 4 were changed by sputtering method by changing the film thickness of the Cu film | membrane which is a main electric conductor layer, and the Mo-Ni-Ti film | membrane which is a coating layer. A laminated wiring film was formed. Then, the change of the reflectance and electrical resistance value at the time of heat processing in air | atmosphere similarly to Example 1 was measured. The results are shown in Table 4.
주도전층인 Cu막의 막두께가 동일한 경우는, 피복층의 막두께가 얇을수록, 성막시의 전기저항값이 낮은 것을 알 수 있다. 대기중에서 가열하면, 상피복층이 10 nm로 얇은 경우에는, 250℃부터 반사율은 저하되고, 350℃에서는 전기저항값이 증가하는데, 20 nm 이상에서는 반사율의 저하나 전기저항값의 증가도 적어져, 높은 내산화성이 얻어지는 것을 확인할 수 있었다.When the film thickness of the Cu film which is a main conductive layer is the same, it turns out that the electrical resistance value at the time of film-forming is low, so that the film thickness of a coating layer is thin. When heated in air, when the epithelial layer is thin at 10 nm, the reflectance decreases from 250 ° C., and the electrical resistance value increases at 350 ° C., but the decrease of the reflectance and increase of the electrical resistance value decreases at 20 nm or more. It was confirmed that high oxidation resistance was obtained.
본 발명의 전자부품용 적층 배선막은, 주도전층인 Cu의 막두께를 200~500 nm로 성막하고, 피복층의 막두께를 20~70 nm로 성막함으로써, 낮은 전기저항값과 높은 내산화성을 얻을 수 있는 것을 확인할 수 있었다.
In the multilayer wiring film for an electronic component of the present invention, by forming a film thickness of Cu as the main conductive layer at 200 to 500 nm and forming a film thickness of the coating layer at 20 to 70 nm, low electric resistance and high oxidation resistance can be obtained. I could confirm that there is.
Claims (4)
상기 조성식의 x, y가, 각각 20≤x≤30, 9≤y≤20인 것을 특징으로 하는 전자부품용 적층 배선막. The method of claim 1,
X and y in the composition formula are 20 ≦ x ≦ 30 and 9 ≦ y ≦ 20, respectively.
상기 조성식의 x, y가, 각각 20≤x≤30, 9≤y≤20인 것을 특징으로 하는 피복층 형성용 스퍼터링 타겟재. The method of claim 3,
The sputtering target material for forming a coating layer, wherein x and y in the composition formula are 20 ≦ x ≦ 30 and 9 ≦ y ≦ 20, respectively.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011180195 | 2011-08-22 | ||
| JPJP-P-2011-180195 | 2011-08-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20130021333A KR20130021333A (en) | 2013-03-05 |
| KR101350648B1 true KR101350648B1 (en) | 2014-01-10 |
Family
ID=47762411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020120089859A Active KR101350648B1 (en) | 2011-08-22 | 2012-08-17 | Layered interconnection for electronic device, and sputtering target for forming a covering layer |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6037208B2 (en) |
| KR (1) | KR101350648B1 (en) |
| CN (1) | CN102953036B (en) |
| TW (1) | TWI493624B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102109166B1 (en) | 2013-01-15 | 2020-05-12 | 삼성디스플레이 주식회사 | Thin film transistor and display substrate having the same |
| AT14576U1 (en) * | 2014-08-20 | 2016-01-15 | Plansee Se | Metallization for a thin film device, method of making the same and sputtering target |
| CN114921761B (en) * | 2022-05-17 | 2023-01-17 | 广东欧莱高新材料股份有限公司 | High-purity multi-element alloy sputtering coating material for high-definition liquid crystal display of high generation |
| WO2025057705A1 (en) * | 2023-09-12 | 2025-03-20 | 株式会社プロテリアル | Alloy thin film and sputtering target |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11142617A (en) * | 1997-11-10 | 1999-05-28 | Dainippon Printing Co Ltd | Blanks for black matrix and color filters for liquid crystal displays |
| JP2001311805A (en) * | 2000-04-27 | 2001-11-09 | Mitsubishi Materials Corp | Light shielding film for forming black matrix and sputtering target for forming light shielding film |
| JP2001311812A (en) * | 2000-04-27 | 2001-11-09 | Mitsubishi Materials Corp | Light-shielding film for forming black matrix and sputtering target for forming light-shielding film |
| JP2005091543A (en) * | 2003-09-16 | 2005-04-07 | Hitachi Metals Ltd | Thin film wiring layer |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000144380A (en) * | 1998-11-10 | 2000-05-26 | Mitsui Eng & Shipbuild Co Ltd | Super corrosion resistant alloy and method for producing the same |
| JP4496518B2 (en) * | 2002-08-19 | 2010-07-07 | 日立金属株式会社 | Thin film wiring |
| JP4304459B2 (en) * | 2002-11-19 | 2009-07-29 | 宇部興産株式会社 | Polyimide film with metal thin film |
| JP2005289046A (en) * | 2004-03-10 | 2005-10-20 | Asahi Glass Co Ltd | LAMINATE FOR FORMING SUBSTRATE WITH WIRING, SUBSTRATE WITH WIRING AND METHOD FOR FORMING THE SAME |
| JP2006040589A (en) * | 2004-07-22 | 2006-02-09 | Asahi Glass Co Ltd | LAMINATE, ORGANIC EL DISPLAY ELEMENT, AND METHOD FOR PRODUCING ORGANIC EL DISPLAY ELEMENT |
| JP4730662B2 (en) * | 2005-03-02 | 2011-07-20 | 日立金属株式会社 | Thin film wiring layer |
| JP4655281B2 (en) * | 2005-03-29 | 2011-03-23 | 日立金属株式会社 | Thin film wiring layer |
| JP5203908B2 (en) * | 2008-12-04 | 2013-06-05 | 新日鉄住金マテリアルズ株式会社 | Ni-Mo alloy sputtering target plate |
-
2012
- 2012-07-30 JP JP2012168042A patent/JP6037208B2/en active Active
- 2012-08-14 TW TW101129421A patent/TWI493624B/en active
- 2012-08-17 KR KR1020120089859A patent/KR101350648B1/en active Active
- 2012-08-21 CN CN201210299543.9A patent/CN102953036B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11142617A (en) * | 1997-11-10 | 1999-05-28 | Dainippon Printing Co Ltd | Blanks for black matrix and color filters for liquid crystal displays |
| JP2001311805A (en) * | 2000-04-27 | 2001-11-09 | Mitsubishi Materials Corp | Light shielding film for forming black matrix and sputtering target for forming light shielding film |
| JP2001311812A (en) * | 2000-04-27 | 2001-11-09 | Mitsubishi Materials Corp | Light-shielding film for forming black matrix and sputtering target for forming light-shielding film |
| JP2005091543A (en) * | 2003-09-16 | 2005-04-07 | Hitachi Metals Ltd | Thin film wiring layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013060656A (en) | 2013-04-04 |
| TWI493624B (en) | 2015-07-21 |
| CN102953036A (en) | 2013-03-06 |
| CN102953036B (en) | 2014-11-05 |
| JP6037208B2 (en) | 2016-12-07 |
| TW201310535A (en) | 2013-03-01 |
| KR20130021333A (en) | 2013-03-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101358529B1 (en) | Layered interconnection for electronic device, and sputtering target for forming a covering layer | |
| CN108242276B (en) | Laminated wiring film and method for manufacturing same | |
| JP2010065317A (en) | DISPLAY DEVICE, AND Cu ALLOY FILM FOR USE IN THE DISPLAY DEVICE | |
| KR101350648B1 (en) | Layered interconnection for electronic device, and sputtering target for forming a covering layer | |
| JP6292471B2 (en) | Metal thin film for electronic parts and Mo alloy sputtering target material for metal thin film formation | |
| KR101553472B1 (en) | Laminated wiring film for electronic components and sputtering target material for forming coating layer | |
| KR20170039582A (en) | Laminate wiring layer for an electronic component and a sputtering target material for forming a coating layer | |
| KR20170078759A (en) | Cu ALLOY FILM AND Cu MULTILAYER FILM | |
| KR101597018B1 (en) | METAL THIN FILM AND Mo ALLOY SPUTTERING TARGET MATERIAL FOR FORMING METAL THIN FILM | |
| KR101828085B1 (en) | NiCu ALLOY TARGET MATERIAL FOR Cu ELECTRODE PROTECTIVE FILM AND LAMINATED FILM | |
| KR101337141B1 (en) | Layered interconnection for a electronic device | |
| JP2010258347A (en) | DISPLAY DEVICE AND Cu ALLOY FILM USED FOR THE SAME | |
| WO2016132847A1 (en) | Cu ALLOY FILM AND Cu MULTILAYER FILM | |
| KR101421881B1 (en) | Membrane laminated wiring for electronic components | |
| WO2025013598A1 (en) | Laminated wiring film for electronic component and sputtering target material for forming coating layer | |
| CN112055888A (en) | Cu alloy target, wiring film, semiconductor device, and liquid crystal display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20120817 |
|
| PA0201 | Request for examination | ||
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20130716 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20140102 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20140106 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20140106 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration | ||
| FPAY | Annual fee payment |
Payment date: 20161219 Year of fee payment: 4 |
|
| PR1001 | Payment of annual fee |
Payment date: 20161219 Start annual number: 4 End annual number: 4 |
|
| FPAY | Annual fee payment |
Payment date: 20171219 Year of fee payment: 5 |
|
| PR1001 | Payment of annual fee |
Payment date: 20171219 Start annual number: 5 End annual number: 5 |
|
| FPAY | Annual fee payment |
Payment date: 20181219 Year of fee payment: 6 |
|
| PR1001 | Payment of annual fee |
Payment date: 20181219 Start annual number: 6 End annual number: 6 |
|
| FPAY | Annual fee payment |
Payment date: 20191219 Year of fee payment: 7 |
|
| PR1001 | Payment of annual fee |
Payment date: 20191219 Start annual number: 7 End annual number: 7 |
|
| PR1001 | Payment of annual fee |
Payment date: 20201217 Start annual number: 8 End annual number: 8 |
|
| PR1001 | Payment of annual fee |
Payment date: 20231204 Start annual number: 11 End annual number: 11 |
|
| PR1001 | Payment of annual fee |
Payment date: 20241219 Start annual number: 12 End annual number: 12 |