KR100988477B1 - Micro heater and its manufacturing method - Google Patents

Abstract

The present invention relates to a micro heater formed by using a MEMS process and a manufacturing method thereof, and more particularly, to a micro heater manufactured by etching a lower structure of the heater wiring so that only the heater wiring portion is separated from the substrate and floating therein. It is about.

In addition, the micro heater and its manufacturing method which improve the manufacturing structure and thermal radiation efficiency, and fully thermally oxidize the support column of the lower part supporting the heater wiring by manufacturing the meander type wiring in the grid type and the manufacturing method thereof. It is about.

The micro heater and a method of manufacturing the same of the present invention include a first step of depositing an insulating film on a substrate and patterning the heater wiring and the electrode pad using a photolithography process; Etching the entire surface of the patterned substrate to form a column structure; Etching the column structure to form a structure in which portions other than the support pillar and the electrode pad are released from the substrate; And a fourth step of forming a heater wiring and an electrode pad by depositing a metal layer or a heat resistant layer on the entire surface of the silicon substrate including the released structure.

MEMS, Micro Heater, Reflective Film, Meander Type, Grid Type, Open Granule

Description

A micro heater and manufacturing method of the same

The present invention relates to a micro heater formed by using a MEMS process and a manufacturing method thereof, and more particularly, to a micro heater manufactured by etching a lower structure of the heater wiring so that only the heater wiring portion is separated from the substrate and floating therein. It is about.

In addition, the micro heater and its manufacturing method which improve the manufacturing structure and thermal radiation efficiency, and fully thermally oxidize the support column of the lower part supporting the heater wiring by manufacturing the meander type wiring in the grid type and the manufacturing method thereof. It is about.

The micro heater using MEMS uses the principle of generating heat by depositing a heat resistant material on a planar silicon substrate to create a heater wiring and supplying current thereto.

Generally, Pt, NiCr, SnO ₂ : Sb, polysilicon, and the like are used as heater wiring materials, and an insulating film is used by thickly depositing a low stress SiN thin film. Since the hot wire must be placed on the thin film portion, the process sequence forms the wiring by forming a thin film on a silicon substrate in advance, depositing a material to be used as a wiring thereon, and then fabricating a pattern.

Then, to obtain a thermal isolation structure, the lower portion of the thin film on which the wiring is formed is removed from the back side of the substrate through the substrate body microfabrication to complete the heater. Heat is generated by the current flowing through the wire, which is a thermal resistor, and operates as a micro heater on the principle that the entire thin film is heated. Loss due to the heat conduction of the thin film and heat is radiated to both the upper and lower parts of the thin film. Due to the problem that the thin film is damaged due to the difference in thermal expansion rate and adhesive force between the wire and the thin film that acts as a heater, the device is damaged due to high temperature operation. .

1 is a structural diagram showing a micro heater formed by a conventional method.

In order to reduce the loss due to heat conduction, the back surface of the substrate 10 is mainly MEMS processed to form a cavity 30. After the insulating film 20 is formed on the entire surface of the substrate 10, a conductive thin film is deposited thereon. The deposited conductive thin film is formed of a plurality of hot wires 40 by a photolithography process, thereby completing a micro heater having an open granular structure. Both ends of the heating wire 40 is formed with an electrode pad 50 to apply a voltage.

When the current flows to the heater wiring 40 which is a heat resistor by the voltage applied from the outside, the micro heater generates heat and heats the entire thin film.

In the conventional micro heater as described above, the insulation film is bent during the high temperature operation due to the difference in thermal expansion coefficient and adhesive force of the insulation film 20 and the heater wiring 40, which causes the heater wiring 40 to be destroyed and the device is damaged. There is a problem.

In addition, since the cavity 30 must be formed on the rear surface of the substrate 10 in order to obtain a thermal isolation structure of the portion where the heater wiring 40 is formed, a process of processing a lower portion of the substrate is additionally involved. This makes the manufacturing process of the heater cumbersome. In addition, wet etching using KOH or the like is mainly used to form the cavity 30. This is a disadvantage in that only SiN of a thick film is used as a material of the insulating film.

In addition, since the mechanical stability of the insulating film 20 must be obtained, a thick thin film having a predetermined thickness or more is formed, which acts as a disadvantage of increasing heat conduction loss.

Therefore, the conventional micro heater as described above requires a structural improvement capable of generating a high temperature at a predetermined distance away from the support pillar, and a heat wire structure for radiating uniform heat from the heat generating unit.

The present invention has been made in order to solve the problems of the prior art as described above is to provide a micro heater and a method of manufacturing the same, which has the effect of improving the performance of the infrared light source using a micro heater by manufacturing a micro heater by MEMS processing technology. There is this.

In addition, the present invention by using only one photomask to manufacture only the heater wiring portion floating from the substrate, thereby improving the efficiency of the manufacturing process and maximize the thermal isolation effect. Accordingly, there is another object to provide a micro heater and a method of manufacturing the same, which are used as an infrared light source having excellent performance by generating high temperature heat while lowering power consumption.

In addition, another object of the present invention is to provide a micro heater and a method for manufacturing the same, which lower the loss due to thermal conduction of the support pillar and maximize the thermal isolation effect by completely thermally oxidizing the support pillar formed under the heater wiring.

In addition, the present invention by manufacturing a meander-type wiring in a grid type, by using a concave array metal layer deposited under the heater wiring as a heat reflection film, it is possible to radiate uniform heat in the heater wiring to improve the thermal radiation efficiency Another object is to provide a micro heater and a method of manufacturing the same.

The object of the present invention is a heater wiring formed spaced apart from the substrate; Electrode pads applying voltage to both ends of the heater wiring; And a support pillar formed to support the heater wiring.

In addition, the heater wiring of the present invention includes an insulating film for electrically insulating the substrate; And a metal layer deposited on the insulating film to allow current to flow therethrough.

In addition, the metal layer of the present invention is a heat resistant layer, it is preferably made of one or more materials selected from nickel chromium, platinum, tin antimony oxide and polysilicon.

In addition, the metal layer of the present invention is preferably configured to further include any one material selected from the carbon material layer, metal layer and insulation layer in the form of a tube or particle.

In addition, the heater wiring of the present invention is preferably formed of a meander type or a grid type.

In addition, the thickness of the pattern of the heater wiring of the present invention is preferably formed not constant.

In addition, the support pillar of the present invention is formed in a wide portion of the heater wiring, the number is preferably composed of zero or more than one.

Another object of the present invention is a first step of depositing an insulating film on a substrate, patterning the heater wiring and the electrode pad using a photolithography process; Etching a front surface of the patterned substrate to form a column structure; Etching the column structure to form a structure in which portions other than the support pillar and the electrode pad are released from the substrate; And depositing a metal layer or a heat resistant layer on the entire surface of the silicon substrate including the released structure to form a heater wiring and an electrode pad.

In addition, before the fourth step, it is preferable to further comprise a step of forming a thermal oxide film on the support pillar by a thermal oxidation process.

In addition, the metal layer is preferably formed by acting as a reflective layer for reflecting heat emitted from the heater wiring is deposited on the front surface of the substrate.

Still another object of the present invention is a first step of sequentially depositing an insulating film and a metal layer on a substrate, patterning the heater wiring and the electrode pad using a photolithography process; Etching the patterned substrate to form a column structure; And etching the column structure to form a heater wiring and an electrode pad released from the silicon substrate, except for the support pillar and the electrode pad.

In addition, the etching of the second step of the present invention preferably uses a dry boiling corrosion method including a deep reactive ion etching (DRIE).

In addition, the etching of the third step of the present invention preferably uses a wet boiling corrosion angle using KOH or TMAH.

In addition, the heater wiring is preferably formed of a meander type or a grid type.

In addition, the silicon remaining in the lower portion of the heater wiring is preferably configured by removing isotropic etching using XeF2 or XeF2 + Ar.

In addition, the support pillar of the present invention is formed in a wide portion of the heater wiring, the number is preferably composed of zero or more than one.

In addition, the electrode pad of the present invention is preferably configured to further comprise the step of depositing Au separately for wiring for the external wiring.

In addition, the electrode pad and the heater wiring of the present invention comprises the steps of depositing Au on the top; And removing only Au on the heater wiring through heat generation of the heater wiring to form a resistance structure.

In addition, the metal layer of the present invention is a heat resistant layer, it is preferably made of any one material of nickel chromium, platinum, tin antimony oxide and polysilicon.

In addition, the metal layer of the present invention is preferably configured to further comprise any one of a carbon material layer, a metal layer and an insulation layer in the form of a tube or particle.

In addition, the infrared radiation due to the heat generation of the heat resistance of the heater wiring of the present invention is preferably made of one of the upper or lower by packaging the concave reflector on the upper or lower portion of the substrate.

Therefore, the present invention is manufactured by etching the lower structure of the heater wiring so that only the heater wiring is floating from the substrate, thereby maximizing the thermal isolation effect and generating high temperature heat while lowering power consumption, which is used as an excellent infrared light source. There is a remarkable and advantageous effect.

In addition, the present invention has a remarkable and advantageous effect in that the manufacturing process is simple by manufacturing a micro heater using a single photomask using a MEMS processing technique, and the mechanical stability is improved by forming a support column under the heater wiring.

In addition, the present invention has a remarkable and advantageous effect of maximizing the thermal isolation effect by lowering the loss due to the heat conduction of the support pillar by completely thermally oxidizing the support pillar formed under the heater wiring.

In addition, the present invention is remarkable to improve the heat radiation efficiency by radiating uniform heat in the heater wiring by manufacturing a meander-type wiring in a grid type and using a concave array metal layer deposited under the heater wiring as a heat reflection film. There is also an advantageous effect.

The terms or words used in this specification and claims are not to be construed as being limited to their ordinary or dictionary meanings, and the inventors may appropriately define the concept of terms in order to best describe their invention. It should be interpreted as meaning and concept corresponding to the technical idea of the present invention based on the principle that the present invention.

Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiment of the present invention and do not represent all of the technical idea of the present invention, various modifications that can be replaced at the time of the present application It should be understood that there may be equivalents and variations.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a view showing a micro heater having a heater wiring structure spaced apart from the substrate according to the present invention, Figure 3 is a top view of the heater wiring structure according to the present invention. On the upper surface of the substrate 110 of the micro heater, a metal layer or a heat resistant layer 120 serving as a reflective film reflecting an infrared light source is formed, and the heater wiring 130, the electrode pad 140, and the support pillar 150 are provided. It includes.

The substrate 110 is preferably a silicon substrate, and more preferably, a substrate exhibiting anisotropic etching characteristics among single crystal silicon substrates is used. In addition, it is also possible to manufacture using anisotropic etching characteristics, such as the silicon substrate in the (111) direction.

The support pillar 150 that serves as a support for suppressing mechanical deformation or destruction of the heater wiring 130 is formed under the heater wiring 130. The support pillar 150 may be formed as necessary in the intended place according to the width of the heater wiring 130. In addition, the heater wiring 130 may be supported and floated only by the electrode pad 140 without the support pillar 150.

The metal layer 120 may be a heat resistant layer, and it is preferable to deposit a durable resistive material with a high temperature heating element such as nickel chromium, platinum, antimony tin oxide alloy, and polysilicon. The metal layer 330 deposited on the entire upper surface of the silicon substrate 310 is a concave array reflective film, and reflects an infrared light source to improve thermal radiation efficiency.

Since the micro heater of the present invention is made of silicon having a significantly thicker thickness of the heater wiring compared to the heater structure formed on the conventional insulator thin film, even though thermal expansion of the heater wiring 130 occurs due to a high temperature, it is a floating structure having high degree of freedom. The mechanical stability is excellent compared to the wiring structure on the substrate in which the cavity is formed.

4 is a cross-sectional view taken along the line AA ′ of FIGS. 2 and 3, and the heater wiring 130 is sequentially etched after the SiNx or SiOx insulating film 132 and the metal layer 133 are sequentially deposited on the silicon substrate 131. It has a structure floating from the silicon substrate 131. The deposited metal layer 133 is insulated from the substrate 131 by a pre-formed insulating layer 132.

In the deposition process, the metal layer 133 is deposited not only on the heater wiring 130 but also between the silicon substrate 131 ′ which is etched through the wirings and remains. Since the deposited metal layer 133 serves as a reflecting film reflecting heat emitted from the heater wiring 130, the heat radiation efficiency of heat emitted in the upper direction of the heater wiring 130 may be improved. The metal layer 133 is the same as the metal layer 120 of FIG. 2.

The silicon substrate 131 remaining under the heater wiring 130 may be removed by isotropic etching using XeF2 or XeF2 + Ar as necessary. When it is necessary to leave silicon in the heating wire to increase the thermal mass of the heater or to ensure mechanical stability, a method of isolating the heater wiring 130 portion from the substrate 110 using wet etching as a method for process stability. Can be used.

Unlike the conventional method, only the lower portion of the heater wiring 130 is isolated from the substrate 110, so that the heat accumulated in the heater wiring 130 in contact with the substrate 110 can be minimized, thereby achieving the same power consumption. The higher temperature release effect can be obtained.

In addition, a micro heater having a thermal isolation structure from the substrate 110 may be manufactured by using a single photolithography process using a single mask to form a pattern of the heater wiring 130, thereby simplifying the process.

5 to 9 are manufacturing process diagrams of an infrared light source micro heater having a reflective film formed on a bottom surface according to the first and second embodiments of the present invention.

5 shows a substrate 410 on which an insulating film 320 is deposited.

6 illustrates a first step of patterning a heater wiring and an electrode pad using a photolithography process on a silicon substrate 310 on which an insulating layer 320 is deposited, and a second structure of dry etching the patterned substrate to form a column structure. Represents a step. The dry etching is preferably an anisotropic dry etching including deep reactive ion etching (DRIE) and the like.

7 and 8 illustrate a third step of wet etching the column structure to form a heater wiring in which portions except the electrode pad and the support pillar are released from the silicon substrate 310. When wet etching, there is a difference in the etching rate according to the crystal direction of the silicon, a certain portion of the support pillar, for example, the middle portion is preferentially etched to have a narrow shape as shown in FIG. If the etching proceeds further, the center portion of the support pillar is completely removed as shown in FIG. 8 to form the heater wiring released from the substrate 310.

Here, the wet etching may be anisotropically etched the substrate 310 including the support pillar using an etching solution such as KOH or TMAH. At this time, some supporting pillars for supporting the heater wiring are left without etching.

The predetermined region for forming the support pillar is preferably formed to have a wider width of the pattern than other regions when forming the pattern in the first step so that the support pillar remains even after two etchings.

FIG. 9 illustrates a fourth step of forming a heater wiring 340 and an electrode pad by depositing a metal layer or a heat resistant layer 330 on an upper surface of the silicon substrate 310 including the released heater wiring 340. In the deposition process, the metal layer or the heat resistant layer 330 is etched through not only the heater wiring 340 but also between the wiring lines and is deposited between the support pillars remaining on the bottom and the substrate.

The metal layer 330 deposited on the entire upper surface of the silicon substrate 310 is a concave array reflective film, and serves to improve heat radiation efficiency by reflecting heat emitted from the heater wiring 340. The metal layer 330 is a heat resistance, it is preferably made of at least one material selected from nickel chromium, platinum, tin oxide antimony alloy and polysilicon.

10 is a structural diagram illustrating a micro heater according to the first embodiment of the present invention formed through the manufacturing process of FIGS. 5 to 9 and has a heater wiring 340 spaced apart from the substrate 310. A portion of the lower portion of the heater wiring 340 has a plurality of support pillars 360 to prevent the heater wiring 350 from sagging.

In addition, the Au 370 is selectively deposited only on the electrode pad 350 using a shadow mask for wiring for external wiring.

In the micro heater of the present invention made by the manufacturing method as described above, when a current flows in the heater wiring 340 which is a heat resistor by a voltage applied to the electrode pad 350 from the outside, heat is generated and the entire thin film is It is heated to act as a heater.

According to the present invention, after depositing the metal layer 330 to form the heater wiring 340, the carbon material layer in the form of a tube or particle can further increase the radiation efficiency of the infrared rays according to the emission of heat in addition to the heater wiring 340. , A metal layer or an insulator layer can be formed.

11 is a structural diagram illustrating a micro heater according to a second embodiment of the present invention formed through the manufacturing process of FIGS. 5 to 9. For external wiring, Au 370 is deposited on both the heater wiring 340 and the electrode pad 350 without a shadow mask. Thereafter, the heater is operated to selectively remove only Au deposited on the heater wiring 340 using high temperature heat of the heater wiring 340 to form Au only in the electrode pad 350.

12 to 14 are manufacturing process diagrams of an infrared light source micro heater without a reflecting film on the bottom surface according to the third embodiment of the present invention.

FIG. 12 sequentially deposits the insulating film 420 and the metal layer 430 on the silicon substrate 410, and then uses the photolithography process to form the heater wiring 440 and the electrode pad 450 on the silicon substrate 410. A first step of patterning and a second step of forming a column structure by dry etching the silicon substrate 410. 13 to 14 illustrate a third step of wet etching the silicon substrate 410 having the columnar structure to form the heater wiring 440 in which portions except the electrode pads 450 are released from the silicon substrate. Indicates.

15 is a structural diagram illustrating an infrared light source micro-heater without a reflecting film on the bottom surface according to the third embodiment formed through the manufacturing process of FIGS. 12 to 14. A silicon substrate 410, a heater wiring 440, an electrode pad 450, and a support pillar 460 are formed, and a reflective film is not formed on the silicon substrate 410. A support pillar 460 is formed below the heater wiring 450 to prevent the heater wiring 450 from sagging.

16 to 19 are manufacturing process diagrams of an infrared light source micro heater having improved heat setting performance having a thermal oxide support pillar according to a fourth embodiment of the present invention.

16 illustrates a first step of patterning a heater wiring and an electrode pad using a photolithography process on a silicon substrate 510 on which an insulating film 520 is deposited, and a second structure of dry etching the patterned substrate to form a column structure. Represents a step. FIG. 17 illustrates a third step of wet etching the column structure to form a heater wiring 540 in which portions except the electrode pad and the support pillar are released from the silicon substrate 510. Thereafter, FIG. 18 completely thermally oxidizes the support pillar formed on the lower portion of the heated heater wiring 550 to form a thermal oxide film 570 on the outer surface. As a result, it is possible to maximize the thermal isolation effect by reducing the loss due to the heat conduction of the support column to improve the open granular structure. The thermal conductivity of the thermal oxide film is about 100 times lower than that of silicon.

19 illustrates a fourth step of forming a heater wiring 540 and an electrode pad 550 by depositing a metal layer 530 on the upper surface of the silicon substrate 510 including the released heater wiring 540. The metal layer 530 deposited on the bottom surface of the silicon substrate 510 reflects an infrared light source to improve thermal radiation efficiency.

20 is a structural diagram illustrating an infrared light source microheater having improved heat setting performance having a thermal oxide support pillar according to a fourth embodiment of the present invention formed through the manufacturing process of FIGS. 16 to 19.

A structure diagram of a micro heater having a support column 560 in which the thermal oxide film 570 is formed by a thermal oxidation process, and includes a heater pillar 540, an electrode pad 550, and a support column having a thermal oxide film 530 formed on an outer surface thereof. 560).

21 is a structural diagram showing wiring of a meander type micro heater floating by a support column according to the present invention. It includes a heater wiring 620 and a support pillar for supporting the heater wiring 620 formed in a minter type.

FIG. 22 is an infrared concave reflector installed on a silicon substrate on which a micro-heater is formed according to the present invention, and emits infrared rays only in a downward direction of the silicon substrate. In addition, since the silicon substrate has a high transmittance for a specific wavelength, it serves as a filter.

FIG. 23 is a wiring structure diagram of a micro heater formed in a grid type according to the present invention, and includes a grid type heater wiring 820, a support pillar 830, and an electrode pad 810. The grid type wiring structure can shorten the effective length of the resistance wire compared to the meander type wiring, can increase the heater wiring area, and can lower the resistance value, thereby lowering the driving voltage. In addition, the effective heat generating area can be maximized, and loss due to heat conduction can be prevented, thereby maximizing the efficiency of the heater.

The support pillar 830 below the grid type heater wiring 820 can be reduced to a minimum within a range that does not impair the structural stability of the heater wiring 820, and the electrode pad without the support pillar 830 is provided. The heater wiring 820 may be supported and floated only by the 810. If there is no support pillar under the grid type heater wiring 820, the loss due to heat conduction is generated only through the electrode pad, and thus even heat distribution can be expected inside the heater, thereby maximizing the opening effect.

The jagged patterns protruding from both sides of the heater wiring 820 represent a corner compensation pattern during wet anisotropic etching. That is, a dummy pattern that does not contribute to the heater wiring is inserted in the outermost part so that the etching characteristic is the same as the overlapped part.

Meanwhile, in the case of the meander type as shown in FIG. 21, the corner compensation pattern may be advantageous in the case of wet anisotropic etching. In other words, the wet etching of the part bent by 'a' is faster, so the pattern shape of this part should be held wider so that the silicon in the corner can withstand the wet structure until the lower part of the middle line reaches the floating structure. If it is made larger, it will remain in the form of a support pillar.

24 is a photographic result of the micro heater according to the present invention. The structure of the micro heater floating from the support column shows the support column released below the heater wiring.

25 is a photograph showing an operation of the micro heater according to the present invention. The part where the support column exists is darker because the temperature is lower than the heating part because of the loss due to heat conduction. In order to obtain a more uniform heating portion, a structure that lowers the thermal conductivity of the support pillar and minimizes the support pillar in a range that does not impair mechanical stability.

Although the present invention has been shown and described with reference to the preferred embodiments as described above, it is not limited to the above embodiments and those skilled in the art without departing from the spirit of the present invention. Various changes and modifications will be possible.

1 is a micro heater according to the prior art

2 is a micro heater having a heater wiring structure spaced apart from a substrate according to the present invention.

3 is a top view of the heater wiring structure according to the present invention.

4 is a cross-sectional view taken along the line A-A 'of FIG.

5 to 9 are manufacturing process diagrams of an infrared light source micro heater having a reflective film formed on the bottom surface according to the first and second embodiments of the present invention.

10 is a structural diagram showing a micro heater according to a first embodiment of the present invention

11 is a structural diagram showing a micro heater according to a second embodiment of the present invention;

12 to 14 are manufacturing process diagrams of an infrared light source micro heater without a reflecting film on the bottom surface according to the third embodiment of the present invention.

15 is a structural diagram showing a micro heater according to a third embodiment of the present invention;

16 to 19 are manufacturing process diagrams of an infrared light source micro heater having improved heat setting performance having a thermal oxide support pillar according to a fourth embodiment of the present invention.

20 is a structural diagram showing a micro heater according to a fourth embodiment of the present invention;

21 is a structural diagram showing a heater wiring of a meander type micro heater floating by a support column according to the present invention.

22 is a package structure diagram in which a substrate with a micro heater according to the present invention is packaged with an infrared concave reflector.

23 is a wiring structure diagram of a micro heater formed in a grid type according to the present invention.

24 is a photographic result of the micro heater according to the present invention.

25 is a photograph showing the operation of the micro heater according to the present invention.

<Explanation of symbols for the main parts of the drawings>

110: silicon substrate 120, 133: metal layer

130: heater wiring 131: silicon substrate remaining after etching

132: insulating layer 140: electrode pad

150: support pillar

Claims (21)

Heater wiring spaced apart from the substrate; Electrode pads applying voltage to both ends of the heater wiring; A support pillar formed to support the heater wiring; And A metal layer formed on a front surface of the substrate including the heater wiring and an electrode pad Micro heater comprising a. The method of claim 1, The heater wiring is An insulating film for electrically insulating the substrate; And A metal layer deposited on the insulating film and for flowing a current Micro heater comprising a. 3. The method of claim 2, The metal layer is a heat resistant layer, and a micro heater made of at least one material selected from nickel chromium, platinum, tin antimony oxide and polysilicon. The method of claim 3, wherein The micro heater further comprises any one material selected from a carbon material layer, a metal layer and an insulation layer in the form of a tube or particle on the metal layer. The method of claim 1, The heater wiring is a micro heater formed in a meander type or a grid type. The method of claim 1, The pattern thickness of the heater wiring is not constant micro heater. delete Depositing an insulating film on the substrate and then patterning the heater wiring and the electrode pad using a photolithography process; Etching the entire surface of the patterned substrate to form a column structure; Etching the column structure to form a structure in which portions other than the support pillar and the electrode pad are released from the substrate; And A fourth step of forming a heater wiring and an electrode pad by depositing a metal layer on the front surface of the substrate including the released structure Micro heater manufacturing method comprising a. The method of claim 8, Before the fourth step, the method of manufacturing a micro heater further comprising the step of forming a thermal oxide film on the support column by a thermal oxidation process. The method of claim 8, The metal layer is deposited on the entire surface of the substrate and a method of manufacturing a micro heater to act as a reflective layer for reflecting heat emitted from the heater wiring. delete The method of claim 8, The etching of the second step is a method of manufacturing a micro heater using a dry boiling corrosion method including deep reactive ion etching (DRIE). The method of claim 8, The etching of the third step is a method of manufacturing a micro-heater using a wet boiling corrosion method using KOH or TMAH. The method of claim 8, The heater wiring is a manufacturing method of a micro heater to be formed in a meander type or a grid type. The method of claim 8, Method of manufacturing a micro heater to remove the silicon remaining in the lower portion of the heater wiring by isotropic etching using XeF2 or XeF2 + Ar. delete The method of claim 8, The electrode pad is a method of manufacturing a micro heater further comprising the step of depositing Au separately for wiring for external wiring. The method of claim 8, Depositing Au on the electrode pad and the heater wiring; And And removing only Au from the upper portion of the heater wiring through the heat generation of the heater wiring to form a resistance structure. The method of claim 8, The metal layer is a heat resistant layer, and a method of manufacturing a micro heater made of at least one material selected from nickel chromium, platinum, tin antimony oxide alloy and polysilicon. The method of claim 8, The method of manufacturing a micro heater further comprising any one of a carbon material layer, a metal layer and an insulation layer in the form of a tube or particle on the metal layer deposited on the released structure. The method of claim 8, Infrared radiation due to the heat generated by the heat resistance of the heater wiring is a method of manufacturing a micro heater made of only one of the upper or lower by packaging a concave reflector installed on the upper or lower portion of the substrate.

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