KR100909812B1 - Manufacturing method of photovoltaic module - Google Patents

Abstract

A method for manufacturing photovoltaic module is provided to secure the reliability of the photovoltaic module by performing the cooling process after the lamination process using the thermo compression bonding. The photovoltaic cell(10) is manufactured. The filler(250) including the EVA (Ethylene Vinyl Acetate) is laminated to the photovoltaic cell. The laminated filler and photovoltaic cell are cooled by the cooling device(300) for over 3 minutes. In the lamination process, the pressed-out filler is removed. The photovoltaic cell comprises the doped single-crystal silicon impurity, and the doped poly-crystal silicon impurity or the doped amorphous silicon impurity. The lamination of filler is performed in the chamber. Cooling is carried out by the cooling device located on the chamber.

Description

Manufacturing method of photovoltaic module {METHOD FOR MANUFACTURING PHOTOVOLTAIC MODULE}

The present invention relates to a method of manufacturing a photovoltaic module.

Recently, as the prediction of depletion of existing energy sources such as oil and coal is increasing, interest in alternative energy to replace them is increasing. Among them, the solar cell module is particularly attracting attention because it is rich in energy resources and has no problems with environmental pollution.

Photovoltaic modules use photoelectric conversion to convert light into electrical energy. There are several types of photovoltaic modules, but typically, silicon semiconductors are used to generate electricity. That is, when light is incident on a semiconductor doped with an impurity, the energy of the light generates electrons and holes in the semiconductor, and current flows to the outside through electrodes and conductive lines connected to the semiconductor.

Since the photovoltaic module generates electricity using light incident from the outside, the photovoltaic module is often exposed to the external environment. Accordingly, various studies for protecting the photovoltaic cells of the photovoltaic module have been conducted.

The manufacturing method of the photovoltaic module of the present invention is to solve the problem of the lamination process due to thermocompression bonding.

Technical problems to be achieved by the present invention are not limited to the above-mentioned technical problems, and other technical problems not mentioned above will be clearly understood by those skilled in the art from the following description. Could be.

The method of manufacturing a photovoltaic module of the present invention includes the steps of manufacturing a photovoltaic cell, applying heat to laminating the filler to the photovoltaic cell, and cooling the laminated filler and the photovoltaic cell.

The manufacturing method of the photovoltaic module of the present invention can secure the reliability of the photovoltaic module by performing a cooling process after the lamination process due to thermal compression.

. In an embodiment of the present invention, the first electrode 110a may be formed by a chemical vapor deposition (CVD) method and may be a transparent electrode including tin oxide (SnO ₂ ) or zinc oxide (ZnO).

As shown in FIG. 1C, the laser is irradiated to the first electrode 110a side or the insulating transparent substrate 200 side in the air to scribe the first electrode 110a. As a result, a first separation groove 210 is formed in the first electrode 110a. That is, since the first separation groove 210 is formed through the first electrode 110a, a short circuit between the adjacent first electrodes 110a is prevented.

As shown in FIG. 1D, the photoelectric conversion layer 100 is stacked by CVD to cover the first electrode 110a and the first separation groove 210. In this case, the photoelectric conversion layer 100 may be bonded in the order of a p-type semiconductor layer, an intrinsic semiconductor layer, and an n-type semiconductor layer. In order to form a p-type semiconductor layer, when a source gas containing silicon such as monosilane (SiH ₄ ) and a gas containing group III elements such as B ₂ H ₆ are mixed in the reaction chamber, the p-type semiconductor layer is formed by CVD. This is laminated. Then, when only the source gas containing silicon flows into the reaction chamber, an intrinsic semiconductor layer is formed on the p-type semiconductor layer by CVD. Finally, when a gas containing a Group 5 element such as PH ₃ and a source gas containing silicon are mixed, an n-type semiconductor layer is laminated on the intrinsic semiconductor layer by the CVD method. As a result, a junction of the p-type semiconductor layer, the intrinsic semiconductor layer, and the n-type semiconductor layer is formed in the amorphous silicon layer.

As shown in FIG. 1E, the laser is irradiated to the insulating transparent substrate 200 side or the photoelectric conversion layer 100 side in the air to scribe the photoelectric conversion layer 100. As a result, the second separation groove 230 is formed in the photoelectric conversion layer 100.

As illustrated in FIG. 1F, the second electrode 110b covering the photoelectric conversion layer 100 and the second separation groove 230 is formed by CVD or sputtering. The second electrode 110b may include at least one of zinc oxide (ZnO) or silver (Ag). In addition, in order to enhance moisture resistance, a buffer layer 230 including at least one of indium tin oxide (ITO), tin oxide (SnO ₂ ), or indium zinc oxide (IZO) is formed on the second electrode 110b by a sputtering method. Can be.

As shown in FIG. 1G, a laser is irradiated in the air to scribe the photoelectric conversion layer 100, the second electrode 110b, and the buffer layer 230. Accordingly, the third separation groove 240 is formed in the photoelectric conversion layer 100, the second electrode 110b, and the buffer layer 230.

As shown in FIG. 1H, a portion of the photovoltaic cell 10 to protect the photovoltaic cell 10 including the photoelectric conversion layer 100, the first electrode 110a, and the second electrode 110b or Filler 250 covering the whole is formed. The filler 250 may include EVA (Ethylene Vinyl Acetate). The filler 250 protects the photovoltaic cell from external shocks, moisture, temperature changes, and ultraviolet rays.

As shown in FIG. 1I, a protective layer 260 for protecting the photovoltaic cell is located on the filler 250. The protective layer 260 may include a low iron tempered glass 260. In addition, the protective layer 260 has a sandwich structure in which a poly-vinyl fluoride (PVF) film, a poly-ethynlen terephthalate (PET) film, and a poly-vinyl fluoride (PVF) film are laminated in this order in place of the low iron tempered glass 260. TPT structure in which a TPT structure back sheet structure is used, or a PVDF (Poly-VinyliDene Fluoride) film, PET (Poly-Ethylen Terephthalate) film, and PVDF (Poly-VinylDene Fluoride) film are laminated in this order. May be used.

As shown in FIG. 1J, the photovoltaic cell 10 in which the filler 250 is formed is placed on a plate 280 of the chamber 270 heated to a predetermined temperature and a vacuum pump (not shown) is operated. Accordingly, the inside of the chamber 270 is in a vacuum state, and the temperature of the photovoltaic cell 10 and the filler 250 placed on the plate 280 increases to a predetermined temperature. Since the temperature of the filler 250 rises, the filler 250 has a certain degree of fluidity.

As shown in FIG. 1K, a lamination process is performed in which silicon rubber 290 presses the photovoltaic cell 10 to pressurize it. Accordingly, the filler 250 is thermocompressed so that the filler 250 is attached to the photovoltaic cell.

As shown in FIG. 1L, after the upper chamber 270b is removed, the cooler 300 positioned on the lower chamber 270a cools the filler 250. In an embodiment of the present invention, the cooler 300 may include a cooling fan. In the case of a cooling fan, the cooling process can be controlled simply according to the rotational speed of the fan. When the filler 250 is thermally compressed and cooled by the cooler 300 as described above, defects may be prevented during the subsequent trimming process or the attachment of the junction box. Such failure prevention will be described in detail with reference to the following drawings.

As described with reference to FIG. 1L, a cooler 300 located on the lower chamber 270a may cool the filler 250, and as shown in FIG. 1M, the photovoltaic cell 10 is a chamber 270. The photovoltaic cell 10 and the filler 250 may be cooled by the cooler 300 after being moved outside of the chamber 270. For example, the photovoltaic cell 10 and the filler 250 may be cooled by the cooler 300 after the photovoltaic cell 10 is transferred from the chamber 270 to the transfer means 310 such as a conveyor belt. . As such, when the photovoltaic cell 10 is transferred to the transfer means 310 and cooled, the next photovoltaic cell 10 is introduced into the chamber 270 so that the lamination process for the filler 250 may be performed. Manufacturing time is shortened.

In this case, a cooling process may be performed in a state in which the operation of the transfer means 310 is stopped, that is, in a state in which the photovoltaic cell 10 on the transfer means 310 is stopped. When the cooling process is performed in a state where the photovoltaic cell 10 is stopped, the cooling speed may be faster than when the cooling process is performed while the photovoltaic cell 10 is moved by the operation of the transfer means 310.

In addition, as shown in FIG. 1N, the cooler 300 may be located under the transport means 310. When the cooler 300 is positioned below the transfer means 310, the distance between the filler 250 and the cooler 300 is the distance between the filler 250 and the cooler 300 when the cooler 300 is positioned above the transfer means 310. Since smaller than the distance between the cooling effect of the filler 250 is increased.

Figure 2 shows the temperature change of the filler when the cooling process in accordance with an embodiment of the present invention. As shown in Figure 2, it can be seen that the temperature of the filler is lowered according to the cooling time after the lamination process.

As can be seen through the table and graph of Figure 2 in the embodiment of the present invention after the cooling process 3 minutes in the state in which the transport means 310 is stopped, the temperature of the filler drops to about 60 ℃ or less, the subsequent manufacturing process Make this stable.

As shown in FIG. 1O, a trimming process for removing the filler pushed out in the lamination process of the filler 250 with the knife 320 is performed. Since the lamination of the filler 250 is made by thermocompression as described above with reference to FIG. 1K, the fluidity of the filler 250 due to heat is increased in the lamination process so that the filler 250 is pushed out during the compression. Therefore, the filler 250 pushed out in the trimming process is removed. At this time, since the filler 250 is cooled to a temperature below a predetermined temperature by the cooler 300, fluidity is reduced and curing is performed to a certain degree. Therefore, it is easy to remove the filler 250 pushed out.

In addition, if there is no cooling process after the lamination process of the filler 250, since the filler 250 is still fluid, the photovoltaic cell 10 is also easily pushed out when the filler 250 is pushed out. The operation reliability of may be lowered. On the other hand, when the cooling process is performed after the lamination process as in the embodiment of the present invention, since the filler 250 is cooled and the fluidity of the filler 250 is reduced, the photovoltaic cell 10 is removed when the filler 250 is removed in the trimming process. This pushback can be prevented to prevent deterioration in the operational reliability of the photovoltaic cell 10.

After the trimming process, a back sheet is attached to the filler 250, and a junction box is provided on the back sheet to supply electricity generated in the photovoltaic cell 10 to the outside. When the cooling process is performed after the lamination process as in the embodiment of the present invention, since the temperature of the photovoltaic module (PVM) falls, the fluidity of the adhesive layer 340 is also reduced. Therefore, the back sheet and the junction box are installed stably.

Although embodiments of the present invention have been described with respect to the fabrication process of thin-film amorphous photovoltaic modules, the lamination process and cooling process of the present invention after fabrication of various photovoltaic cells, such as single crystal photovoltaic cells, polycrystalline photovoltaic cells or compound photovoltaic cells, Can be applied.

The single crystal photovoltaic cell includes monocrystalline silicon doped with impurities, and the polycrystalline photovoltaic cell includes polycrystalline silicon doped with impurities. The compound photovoltaic cell may include a group I-III-VI compound semiconductor, a group II-VI compound semiconductor, or a group III-V compound semiconductor.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains can understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. will be. Therefore, the above-described embodiments are to be understood as illustrative and not restrictive in all respects, and the scope of the present invention is indicated by the appended claims rather than the detailed description, and the meaning and scope of the claims and All changes or modifications derived from the equivalent concept should be interpreted as being included in the scope of the present invention.

1A and 1C illustrate the formation of a first electrode in accordance with an embodiment of the present invention.

1D and 1E illustrate the formation of a photoelectric conversion layer according to an embodiment of the present invention.

1F and 1G illustrate the formation of a second electrode and a buffer layer in accordance with an embodiment of the present invention.

1H and 1I illustrate the formation of a filler and a protective layer in accordance with an embodiment of the present invention.

1J and 1K illustrate lamination of a filler in accordance with an embodiment of the present invention.

1L and 1N illustrate a cooling process in accordance with an embodiment of the present invention.

1o illustrates a trimming process according to an embodiment of the invention.

Figure 2 shows the temperature change of the photovoltaic module when the cooling process in accordance with an embodiment of the present invention.

Claims (9)

Manufacturing a photovoltaic cell; Laminating a filler comprising EVA to the photovoltaic cell by applying heat; Cooling the laminated filler and the photovoltaic cell for at least 3 minutes; And Removing the filler pushed out in the lamination process Method of manufacturing a photovoltaic module comprising a. The method of claim 1, The photovoltaic cell comprises a single crystal silicon doped with impurities, polycrystalline silicon doped with impurities, or amorphous silicon doped with impurities. The method of claim 1, And the photovoltaic cell is a compound photovoltaic cell. The method of claim 2, And a p-type silicon layer, an intrinsic silicon layer, and an n-type silicon layer are formed on the amorphous silicon. The method of claim 1, The lamination of the filler is made in the chamber, the cooling method of manufacturing a photovoltaic module, characterized in that made by a cooler located on the chamber. The method of claim 1, The lamination of the filler is made in the chamber, wherein the cooling is performed outside the chamber. The method of claim 6, The photovoltaic cell is moved to a transfer means located outside the chamber, and the cooling is performed after the movement of the transfer means is a manufacturing method of a photovoltaic module. delete The method of claim 7, wherein The cooling method for producing a photovoltaic module, characterized in that the cooler is located under the transfer means.

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