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KR100813106B1 - Press-bonded cathode and its manufacturing method - Google Patents

Press-bonded cathode and its manufacturing method Download PDF

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KR100813106B1
KR100813106B1 KR1020070095164A KR20070095164A KR100813106B1 KR 100813106 B1 KR100813106 B1 KR 100813106B1 KR 1020070095164 A KR1020070095164 A KR 1020070095164A KR 20070095164 A KR20070095164 A KR 20070095164A KR 100813106 B1 KR100813106 B1 KR 100813106B1
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shower head
support ring
cathode
pressure
silicon
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오중표
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다이섹(주)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
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Abstract

본 발명은 반도체의 제조공정 중 플라즈마 식각장치의 캐소드에 관한 것으로, 더욱 상세하게 초음파세척에 의한 샤워헤드와 지지링의 결합력이 저하되지 않고, 간편한 공정으로 샤워헤드와 지지링을 일체화하기 위한 가압접합된 캐소드 및 그 제조방법에 관한 것으로, 샤워헤드 상부에 다결정규소로 제작한 지지링(20)을 700℃ 내지 1300℃의 온도를 가하되, 정점온도에서 5 내지 15분간 그 온도를 유지한 후, 1 내지 30MPa의 압력과 1 내지 0.5KV의 전압을 인가하여 가압접합하는 것을 특징으로 하는 가압접합된 캐소드이다.The present invention relates to a cathode of a plasma etching apparatus in a semiconductor manufacturing process, and more specifically, the bonding force of the shower head and the support ring by ultrasonic cleaning is not lowered, and the pressure bonding for integrating the shower head and the support ring in a simple process is performed. Regarding the cathode and the manufacturing method thereof, the support ring 20 made of polycrystalline silicon on the shower head is applied to a temperature of 700 ℃ to 1300 ℃, and maintained at the peak temperature for 5 to 15 minutes, The pressure-bonded cathode is characterized in that the pressure-bonded cathode by applying a pressure of 1 to 30MPa and a voltage of 1 to 0.5KV.

상기와 같이 제작된 본 발명의 캐소드는 단결정의 규소로 제작된 샤워헤드와 저가의 다결정규소로 제작된 지지링이 열에 의해 상기 샤워헤드와 지지링이 접합한 면이 상호 용융되어 캐소드의 제조단가가 저렴해지는 효과가 있다.The cathode of the present invention manufactured as described above has a shower head made of monocrystalline silicon and a support ring made of low-cost polycrystalline silicon, and the surface of the shower head and the support ring joined together by heat to melt each other. It is effective to become cheap.

또한, 통상의 열진공챔버를 통한 단순공정으로 가압접합함으로써, 캐소드의 제작시간을 감축할 수 있어, 캐소드의 생산량을 증대시키는 효과가 있다.In addition, by press-bonding in a simple process through a common thermal vacuum chamber, it is possible to reduce the production time of the cathode, there is an effect to increase the amount of production of the cathode.

Description

가압접합된 캐소드 및 그 제조방법 { pressurization bonding cathode and the manufacture method }Press-bonded cathode and its manufacturing method {pressurization bonding cathode and the manufacture method}

본 발명은 반도체의 제조공정 중 플라즈마 식각장치의 캐소드에 관한 것으로, 더욱 상세하게 초음파세척에 의한 샤워헤드와 지지링의 결합력이 저하되지 않고, 간편한 공정으로 샤워헤드와 지지링을 일체화하기 위한 가압접합된 캐소드 및 그 제조방법에 관한 것이다.The present invention relates to a cathode of a plasma etching apparatus in a semiconductor manufacturing process, and more specifically, the bonding force of the shower head and the support ring by ultrasonic cleaning is not lowered, and the pressure bonding for integrating the shower head and the support ring in a simple process is performed. To a cathode and a method for producing the same.

상기 플라즈마 식각장치는 통상적으로, RF(radio frequency)전력을 캐소드에 인가시키고, 캐소드에 형성된 RF전력의 전기장 내로 통과하는 식각기체를 플라즈마화 시키고, 그 식각기체의 플라즈마를 RF전력의 전기장을 이용해 웨이퍼 표면에 수직으로 이동시키도록 구성된 것으로, 그 이온과 웨이퍼가 반응 및 충돌하여 특정형태의 홈 및 구멍을 웨이퍼에 형성하는 장치이다.The plasma etching apparatus typically applies RF (radio frequency) power to a cathode, converts an etching gas that passes into an electric field of RF power formed in the cathode, and plasmas the etching gas plasma using an RF electric field. It is configured to move perpendicular to the surface, and the device reacts and collides with the ions to form grooves and holes of a specific type in the wafer.

상기 플라즈마 식각장치에 구비되는 본 발명의 캐소드(cathode)는 도 1과 같이, 하나의 규소 잉곳을 절삭 및 연마하여 식각기체가 웨이퍼 표면에 고르게 분포 되도록 다수의 기체 분배홀(1a)이 형성된 원판 형상의 샤워헤드부(1)와 그 샤워헤드부(1) 상부에 동일한 지름의 원형 링 형태로 외주 면에 돌출턱(2a)이 형성된 지지링부(2)를 형성시킨 절삭 및 연마를 통한 제조방법이 실시되고 있다.The cathode of the present invention provided in the plasma etching apparatus has a disc shape in which a plurality of gas distribution holes 1a are formed such that an etching gas is evenly distributed on the wafer surface by cutting and polishing one silicon ingot as shown in FIG. 1. The cutting and polishing method of forming a shower head portion 1 and a support ring portion 2 having a protruding jaw 2a formed on its outer circumferential surface in the form of a circular ring having the same diameter on the shower head portion 1 of the It is carried out.

상기 제조방법에 대해서 상세히 설명하면,The manufacturing method will be described in detail.

순수 규소 잉곳을 제작될 캐소드의 두께만큼 절삭하고, 그 절삭된 규소잉곳을 캐소드의 크기만큼 원형형태로 절삭하고, 원형형태로 절삭된 규소잉곳에 돌출턱(2a)이 형성되도록 외곽하부 면을 연마하고, 그 돌출턱(2a)이 형성된 규소잉곳 상부에 그 상부 면보다 작은 크기의 홈이 형성되도록 연마하여 지지링부(2)를 형성하고, 그 홈의 바닥면에 다수의 분배홀(1a)이 형성되도록 다수의 구멍을 형성하여 샤워헤드부(1)를 형성하는 제조방법으로 구성된 것이다.The pure silicon ingot is cut to the thickness of the cathode to be manufactured, the cut silicon ingot is cut into the circular shape by the size of the cathode, and the outer lower surface is polished so that the protruding jaw 2a is formed on the cut silicon ingot. And a support ring 2 is formed by polishing a groove having a smaller size than the upper surface of the silicon ingot on which the protruding jaw 2a is formed, and a plurality of distribution holes 1a are formed on the bottom surface of the groove. It is composed of a manufacturing method for forming a shower head portion (1) by forming a plurality of holes as possible.

하지만, 상기와 같이 하나의 규소잉곳을 절삭하고 연마하는 것으로 인해, 많은 양의 규소가 톱밥의 형태로 낭비되는 문제가 있고, 그 샤워헤드부(1)를 수평으로 유지시키기 위한 목적의 지지링부(2)를 하나의 규소잉곳을 절삭하고 연마하여 형성하여야 함에 따라 고가의 순수 규소로 제작되어 캐소의 가격이 고가인 문제가 있어서, 현재에는 분배홀(1a)이 형성된 원판형태의 샤워헤드부(1)를 규소로 별도제작하고, 돌출턱(2a)이 형성된 원형 링형태의 지지링부(2)를 규소보다 저렴한 재료로 구성하여 대한민국 등록특허공보 제0329974호의 탄성중합체를 사용한 본딩(bonding) 결합구조를 통해 캐소드를 제작하여 실시하고 있는 실정이다.However, there is a problem that a large amount of silicon is wasted in the form of sawdust due to cutting and polishing one silicon ingot as described above, and a support ring portion for the purpose of keeping the shower head portion 1 horizontal ( Since 2) is formed by cutting and polishing one silicon ingot, there is a problem that the price of the caso is expensive because it is made of expensive pure silicon, and a shower head part 1 having a disc shape having a distribution hole 1a is presently formed. ) Is manufactured separately from silicon, and the support ring part 2 having a protruding jaw 2a is formed of a material having a lower cost than that of silicon to form a bonding structure using an elastomer of Korean Patent Publication No. 0329974. Through the production of cathode through the situation.

상기 본딩 결합구조는 도 1과 같이, 샤워헤드부(1)와 지지링부(2)를 별도로 제작하되 지지링부(2)는 그라피이트(graphite)로 형성하고, 그 샤워헤드(1)와 지지링부(2)를 제너럴 일렉트릭사의 TSE3221과 같은 단일 성분의 유동 열경화 가능한 접착제 등의 탄성중합체를 사용하여 샤워헤드(1)와 지지링(2)을 고정하는 구조이다.The bonding coupling structure, as shown in Figure 1, the shower head portion 1 and the support ring portion 2 is manufactured separately, but the support ring portion 2 is formed of graphite (graphite), the shower head 1 and the support ring portion (2) is a structure in which the shower head 1 and the support ring 2 are fixed by using an elastomer such as a single component flow thermosetting adhesive such as TSE3221 manufactured by General Electric.

상기 배경기술에와 같이 현재 실시되고 있는 본딩 결합구조에 의해 제조된 캐소드는 플라즈마 식각장치의 식각공정에 의해 식각기체의 플라즈마 이온과 웨이퍼와의 충돌 및 화학반응에 의한 오염이 심할 경우, 특정 세척액이 구비된 초음파세척기를 통하여 캐소드의 오염된 이물질들 제거하게 되는데, 이때, 초음파세척기에서 발생하는 진동과 세정액에 의해 탄성중합체로 구성된 접착제의 접착력이 대폭 저하되어 샤워헤드와 지지링이 이격되거나 분리되는 문제가 있다.As described in the background art, the cathode manufactured by the bonding bonding structure currently implemented has a specific cleaning liquid when the plasma ion of the etching gas collides with the wafer by the etching process of the etching apparatus, and the contamination by chemical reaction is severe. Contaminated foreign matters of the cathode are removed through the ultrasonic cleaner provided, and the adhesive force of the adhesive composed of the elastomer is greatly reduced by the vibration and the cleaning liquid generated from the ultrasonic cleaner, so that the shower head and the support ring are separated or separated. There is.

샤워헤드 상부에 다결정규소로 제작한 지지링(20)을 700℃ 내지 1300℃의 온도를 가하되, 정점온도에서 5 내지 15분간 그 온도를 유지한 후, 1 내지 30MPa의 압력과 1 내지 0.5KV의 전압을 인가하여 가압접합하는 것을 특징으로 하는 가압접합된 캐소드.Applying a support ring 20 made of polycrystalline silicon on the shower head at a temperature of 700 ℃ to 1300 ℃, the temperature is maintained for 5 to 15 minutes at the peak temperature, the pressure of 1 to 30MPa and 1 to 0.5KV Pressure-bonded cathode, characterized in that the pressure bonding by applying a voltage of.

본 발명은 순수 규소로 제작된 샤워헤드와 저가의 다결정규소로 제작된 지지링을 가압접합하여 일체화된 캐소드를 제조할 수 있어, 저렴한 캐소드를 제공하는 효과가 있고, 초음파세척에 의해 캐소드를 구성하는 샤워헤드와 지지링이 이격되거나 분리되지 않아, 캐소드의 사용수명을 대폭 연장할 수 있는 효과가 있다.The present invention can produce an integrated cathode by press-bonding a shower head made of pure silicon and a support ring made of low-cost polycrystalline silicon, thereby providing an inexpensive cathode and constituting the cathode by ultrasonic cleaning. Since the shower head and the support ring are not spaced apart or separated, there is an effect that can significantly extend the service life of the cathode.

본 발명은 더욱 상세하게 초음파세척에 의한 샤워헤드와 지지링의 결합력이 저하되지 않고, 간편한 공정으로 저가의 캐소드를 제공하기 위한 가압접합된 캐소드 및 그 제조방법에 관한 것으로, 샤워헤드를 규소로 제작하고, 지지링을 다결정규소(poly Si)로 제작하고, 그 샤워헤드와 지지링이 가압접합된 구성을 가진다.The present invention relates to a pressure-bonded cathode and a method of manufacturing the same for providing a low-cost cathode in a simple process without degrading the bonding force of the shower head and the support ring by ultrasonic cleaning in more detail, the showerhead is made of silicon The support ring is made of polysilicon, and the shower head and the support ring are press-bonded.

상기 본 발명의 제조방법은 대략적으로 크게 4공정으로 구성되는바, 규소(Si) 또는 탄화규소(SiC) 잉곳을 원판형태로 절삭하되 다수의 분배홀(11)이 형성된 샤워헤드(10)와 저가의 다결정규소를 사용하여, 상기 샤워헤드의 지름과 동일한 원형 링 형태로 형성하되, 외주면에 돌출턱(21)이 형성된 지지링(20)을 제작하는 가공단계(S1)와, 열진공챔버의 압력에 의해 그 샤워헤드(10)와 지지링(20)이 상호 압착되도록 상기 샤워헤드(10) 상부에 지지링(20)을 안착하여 열진공챔버 내에 구비하는 준비단계(S2)와, 상기 열진공챔버 내에 구비된 샤워헤드(10)와 지지링(20)을 진공상태에서 700℃ 내지 1300℃의 온도까지 가열하되, 5 내지 15분간 700℃ 내지 1300℃의 온도를 유지시키는 가열단계(S3)와, 상기 샤워헤드(10)와 지지링(20)이 700℃ 내지 1300℃로 가열되는 시점에서 1 내지 30MPa의 압력과 1 내지 0.5KV의 전압을 상기 샤워헤드(10)와 지지링(20)에 가하여 가압하는 가압단계(S4)로 구성됨을 특징으로 하는 가압접합된 캐소드의 제조방법.The manufacturing method of the present invention is composed of roughly four steps, in which a silicon (Si) or silicon carbide (SiC) ingot is cut into a disc shape, but the shower head 10 having a plurality of distribution holes 11 and a low cost. Using a polysilicon of the, forming a circular ring shape the same as the diameter of the shower head, the manufacturing step (S1) for producing a support ring 20 formed with a protruding jaw 21 on the outer peripheral surface and the pressure of the thermal vacuum chamber By preparing the shower head 10 and the support ring 20 by pressing the support ring 20 on the shower head 10 so as to be pressed into each other in the thermal vacuum chamber (S2) and the thermal vacuum Heating the shower head 10 and the support ring 20 provided in the chamber to a temperature of 700 ° C to 1300 ° C in a vacuum state, the heating step (S3) for maintaining the temperature of 700 ° C to 1300 ° C for 5 to 15 minutes and 1 to 30 when the shower head 10 and the support ring 20 are heated to 700 ° C to 1300 ° C. Method of producing a pressure-bonded cathode, characterized in that consisting of a pressing step (S4) of applying a pressure of MPa and a voltage of 1 to 0.5KV to the shower head (10) and the support ring (20).

상기와 같이 규소 또는 탄화규소로 형성된 샤워헤드(10)와 다결정규소로 형성된 지지링(20)이 가압접합된 캐소드는 지지링(20)이 저렴한 다결정규소로 제작되어 그 캐소드의 제작단가 저렴해지는 효과가 있고, 열진공챔버를 통한 단순한 제조방법에 의해 그 캐소드의 제작시간을 단축시켜 생산 수량을 증대시키는 효과가 있다.As described above, the cathode in which the shower head 10 formed of silicon or silicon carbide and the support ring 20 formed of polycrystalline silicon is press-bonded is made of polycrystalline silicon having a support ring 20 that is inexpensive. There is an effect of shortening the production time of the cathode by a simple manufacturing method through the thermal vacuum chamber to increase the production quantity.

그리고 샤워헤드(10)와 지지링(20)이 상호 용융되어 가압접합됨에 따라 초음파공정에 의해 상기 샤워헤드(10)와 지지링(20)이 이격되거나 분리되지 않는 효과가 있다.As the shower head 10 and the support ring 20 are melted and press-bonded to each other, the shower head 10 and the support ring 20 may not be separated or separated by an ultrasonic process.

이하 본 발명의 실시 예를 통해 본 발명을 더욱 상세히 설명한다.Hereinafter, the present invention will be described in more detail with reference to the following examples.

도 2와 같이, 우선, 제 1공정은 규소(Si) 또는 탄화규소(SiC) 잉곳을 원판형태로 절삭하되 다수의 분배홀(11)을 형성하여 샤워헤드(10)를 제작하고, 저가의 다결정규소를 사용하여, 상기 샤워헤드(10)의 지름과 동일한 원형 링 형태로 형성하되, 외주면에 돌출턱(21)을 형성한 지지링(20)을 별도로 제작하여 가공단계(S1)를 완료한다.As shown in FIG. 2, first, in the first process, a silicon (Si) or silicon carbide (SiC) ingot is cut into a disc shape, but a plurality of distribution holes 11 are formed to manufacture a shower head 10, and a low-cost polycrystalline Using silicon, the same shape as the diameter of the shower head 10 is formed in the shape of a circular ring, the support ring 20 is formed separately to form a protruding jaw 21 on the outer peripheral surface to complete the processing step (S1).

그 후 진행되는 제 2공정은 진공상태에서 고온의 열을 방출하고, 특정방향으로 압력을 가하며, 일정한 전류를 인가하도록 구성된 열진공챔버내에 상기 샤워헤드(10)와 지지링(20)을 상기 열진공챔버의 압력에 의해 그 샤워헤드(10)와 지지링(20)이 상호 압착되도록 열진공챔버 내에 구비하는 준비단계(S2)가 완료된다.The second process then proceeds to heat the showerhead 10 and the support ring 20 in a thermal vacuum chamber configured to release hot heat in a vacuum, pressurize in a specific direction, and apply a constant current. The preparation step (S2) of the shower head 10 and the support ring 20 to be compressed to each other by the pressure of the vacuum chamber is completed.

그 다음, 제 3공정은 진공챔버 내에 구비된 샤워헤드(10)와 지지링(20)을 진공상태에서 700℃ 내지 1300℃의 온도까지 가열하되, 5 내지 15분간 700℃ 내지 1300℃의 온도로 유지하는 가열단계(S3)가 완료된다.Next, the third process is to heat the shower head 10 and the support ring 20 provided in the vacuum chamber to a temperature of 700 ℃ to 1300 ℃ in a vacuum state, at a temperature of 700 ℃ to 1300 ℃ for 5 to 15 minutes The heating step S3 to be maintained is completed.

그 후, 진행되는 제 4공정은 상기 샤워헤드(10)와 지지링(20)이 700℃ 내지 1300℃로 유지되는 시점에서 5 내지 15분간 1 내지 30MPa의 압력을 샤워헤드(10)와 지지링(20)이 상호 압착되도록 가함과 동시에, 1 내지 0.5KV의 전압을 상기 샤워헤드(10)와 지지링(20)에 인가시켜 가압하는 가압단계(S4)를 완료한다.Subsequently, the fourth process is performed, wherein the shower head 10 and the support ring have a pressure of 1 to 30 MPa for 5 to 15 minutes when the shower head 10 and the support ring 20 are maintained at 700 ° C to 1300 ° C. At the same time as the pressing of the 20 to each other, a pressure of 1 to 0.5KV is applied to the shower head 10 and the support ring 20 to complete the pressing step (S4).

상기와 같은 제조방법을 통해, 각각 분리되어 제작된 샤워헤드(10)와 지지링(20)이 고온과 전압에 의해 상호 용융됨과 동시에 가압되어, 그 샤워헤드(10)와 지지링(20)이 접합 면에 의해 일체화되어 캐소드의 제작이 완료된다.Through the manufacturing method as described above, the shower head 10 and the support ring 20, which are separately produced, are melted and pressed at the same time by high temperature and voltage, so that the shower head 10 and the support ring 20 are pressed. Integration by the joining surface completes the manufacture of the cathode.

상기와 같이, 규소로 형성된 샤워헤드(10)와 저가의 다결정규소로 형성된 지지링(20)의 결합상태는 도 4와 같이, 하부의 샤워헤드(10)와 상부의 지지링(20)의 접한 면이 서로 용융되어 견고히 일체화되었음을 알 수 있다.As described above, the combined state of the shower head 10 formed of silicon and the support ring 20 formed of low-cost polycrystalline silicon is in contact with the shower head 10 of the lower portion and the support ring 20 of the upper portion as shown in FIG. 4. It can be seen that the faces melted together and were firmly integrated.

도 1은 배경기술에 속하는 캐소드의 전체 사시도.1 is an overall perspective view of a cathode belonging to the background art;

도 2는 본 발명에 의한 샤워헤드와 지지링의 분해 사시도.Figure 2 is an exploded perspective view of the shower head and the support ring according to the present invention.

도 3은 본 발명의 제조방법에 대한 전체 흐름도 도면.3 is an overall flow chart of the manufacturing method of the present invention.

도 4는 본 발명의 실시 예에 의한 가압접합된 캐소드의 용융상태를 촬영한 사진.Figure 4 is a photograph of the molten state of the pressure-bonded cathode according to an embodiment of the present invention.

Claims (2)

캐소드에 있어서,For the cathode, 규소로 제작된 샤워헤드(10) 상부에 다결정규소로 제작한 지지링(20)을 700℃ 내지 1300℃의 온도를 가하되, 정점온도에서 5 내지 15분간 그 온도를 유지한 후, 1 내지 30MPa의 압력과 1 내지 0.5KV의 전압을 인가하여 가압접합됨을 특징으로 하는 가압접합된 캐소드.A temperature of 700 ° C. to 1300 ° C. was applied to the support ring 20 made of polycrystalline silicon on the shower head 10 made of silicon, and then maintained at a peak temperature for 5 to 15 minutes, and then 1 to 30 MPa. Pressure-bonded cathode, characterized in that the pressure-bonded by applying a pressure of 1 to 0.5KV. 캐소드의 제조방법에 있어서,In the method for producing a cathode, 규소(Si) 또는 탄화규소(SiC) 잉곳을 원판형태로 절삭하되 다수의 분배홀(11)이 형성된 샤워헤드(10)와 저가의 다결정규소를 사용하여, 상기 샤워헤드의 지름과 동일한 원형 링 형태로 형성하되, 외주면에 돌출턱(21)이 형성된 지지링(20)을 제작하는 가공단계(S1)와;Using a shower head 10 having a plurality of distribution holes 11 and a low-cost polycrystalline silicon, a silicon (Si) or silicon carbide (SiC) ingot is cut into a disc shape, and a circular ring shape having the same diameter as the shower head is used. Forming, but processing step (S1) for producing a support ring 20 is formed with a protruding jaw 21 on the outer peripheral surface; 열진공챔버의 압력에 의해 그 샤워헤드(10)와 지지링(20)이 상호 압착되도록 상기 샤워헤드(10) 상부에 지지링(20)을 안착하여 열진공챔버 내에 구비하는 준비단계(S2)와;Preparatory step (S2) for mounting the support ring 20 on the upper portion of the shower head 10 so that the shower head 10 and the support ring 20 is pressed together by the pressure of the thermal vacuum chamber (S2) Wow; 상기 열진공챔버 내에 구비된 샤워헤드(10)와 지지링(20)을 진공상태에서 700℃ 내지 1300℃의 온도까지 가열하되, 5 내지 15분간 700℃ 내지 1300℃의 온도를 유지시키는 가열단계(S3)와;Heating the shower head 10 and the support ring 20 provided in the thermal vacuum chamber to a temperature of 700 ℃ to 1300 ℃ in a vacuum, while maintaining a temperature of 700 ℃ to 1300 ℃ for 5 to 15 minutes ( S3); 상기 샤워헤드(10)와 지지링(20)이 700℃ 내지 1300℃로 가열되는 시점에서 1 내지 30MPa의 압력과 1 내지 0.5KV의 전압을 상기 샤워헤드(10)와 지지링(20)에 가하여 가압하는 가압단계(S4)로 구성됨을 특징으로 하는 가압접합된 캐소드의 제조방법.When the shower head 10 and the support ring 20 are heated to 700 ° C. to 1300 ° C., a pressure of 1 to 30 MPa and a voltage of 1 to 0.5 KV are applied to the shower head 10 and the support ring 20. Method for producing a pressure-bonded cathode, characterized in that consisting of a pressing step (S4) to pressurize.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010071688A (en) * 1998-06-30 2001-07-31 리차드 에이치. 로브그렌 Elastomer bonded parts for plasma processes and method for manufacture and use thereof
KR20010080530A (en) * 1999-09-23 2001-08-22 리차드 에이치. 로브그렌 Gas distribution apparatus for semiconductor processing
KR20030078592A (en) * 2002-03-29 2003-10-08 삼성전자주식회사 Electrode assembly for manufacturing a semiconductor substrate and manufacturing apparatus having the same
KR20030084540A (en) * 2002-04-22 2003-11-01 닛씬보 인더스트리즈 아이엔씨 Highly Heat-resistant Plasma Etching Electrode and Dry Etching Device Including the Same
KR20040028989A (en) * 2001-08-08 2004-04-03 램 리서치 코포레이션 Showerhead electrode design for semiconductor processing reactor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010071688A (en) * 1998-06-30 2001-07-31 리차드 에이치. 로브그렌 Elastomer bonded parts for plasma processes and method for manufacture and use thereof
KR20010080530A (en) * 1999-09-23 2001-08-22 리차드 에이치. 로브그렌 Gas distribution apparatus for semiconductor processing
KR20040028989A (en) * 2001-08-08 2004-04-03 램 리서치 코포레이션 Showerhead electrode design for semiconductor processing reactor
KR20030078592A (en) * 2002-03-29 2003-10-08 삼성전자주식회사 Electrode assembly for manufacturing a semiconductor substrate and manufacturing apparatus having the same
KR20030084540A (en) * 2002-04-22 2003-11-01 닛씬보 인더스트리즈 아이엔씨 Highly Heat-resistant Plasma Etching Electrode and Dry Etching Device Including the Same

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