KR100442840B1 - Manufacturing method of triode carbon nanotube field emission array - Google Patents

Abstract

The present invention relates to a method of manufacturing a field emission array using carbon nanotubes, which are low voltage field emission materials, and to providing a method of manufacturing a tripolar carbon nanotube field emission array by a back exposure method, without using a separate mask layer. By using the thin film layer itself prepared on the mask layer as a mask layer, a carbon nanotube field emission array having a triode structure can be easily manufactured using a small number of mask layers.

Description

Manufacturing method of triode carbon nanotube field emission array

The present invention relates to a method for producing a field emission array using carbon nanotubes, which are low voltage field emission materials.

Conventional field emission display devices include a Spindt type field emitter array (FEA) mainly made of a metal such as Mo or a semiconductor material such as Si. This is a micro tip FED in which electrons are emitted from the tip by applying a strong electric field from the gate to the tips arranged at regular intervals. In the case of the micro tip FED, expensive semiconductor equipment is required, and it is difficult to manufacture a large area field emission display device.

In addition, in the case of a tip formed of a metal or a semiconductor, the gate voltage for electron emission is relatively high due to the large work function, and during the electron emission, residual gas particles collide with electrons and ionize, and these gas ions are micro-tips. It impacts and impacts and destroys the electron emission source. If the phosphor particles collided by these electrons fall, it contaminates the micro tip, thereby degrading the performance of the electron emission source and consequently degrading the performance and lifetime of the FEA. .

Recently, with the emergence of carbon nanotubes, which are new field emission materials, studies have been attempted to replace metal tips, which have been used as electron emission tips, with carbon nanotubes. Carbon nanotubes have a large aspect ratio and have excellent electrical and stable mechanical properties. Due to such characteristics, various research groups are currently conducting research to manufacture better field emission devices by employing carbon nanotubes as field emission materials. In the case of such carbon nanotubes, the electron emission field is about 2V / µm, which is very low, and has excellent chemical stability, which is suitable for manufacturing a field emission display device.

In the case of the bipolar tube structured field emission device employing carbon nanotubes, the conventional structure can be easily manufactured, but there is a problem in controlling the emission current, and it is difficult to realize a moving image or gray-scale image. There is a problem. Therefore, a triode structure is required instead of the dipole structure. In the case of a patent for a field emission display device using carbon nanotubes, as in Xu et al. (US Pat. No. 5,973,444), etc., the triode structure is majored like a micro tip based on growing carbon nanotubes by CVD. It is disclosed that the tablet is formed through a thin film process. In addition, Uemura et al (US Pat. No. 6,239,547) discloses using a carbon nanotube bundle as a field emission device and attaching it to an electrode using a conductive adhesive.

However, when fabricating a structure using such a process, expensive semiconductor equipment is required, and it is difficult to manufacture a display device having a large area.

If a conventional thick film process is used, it is difficult to form a universal triode structure due to the limitation of resolution of the thick film process. In addition, there is a problem in that the alignment between layers is difficult when forming a multilayer film because a large-area display device needs to undergo a high temperature baking process due to the characteristics of the thick film.

In the present invention, in order to solve the above problems, using the photosensitive thick film material to apply the front surface by screen printing and fabricate the triode structure through the etching process, but using a small number of mask layer and can solve the problem of the interlayer alignment of the multilayer film at the same time It is an object of the present invention to provide a method for producing a carbon nanotube field emission array.

1A to 1J are cross-sectional views illustrating a method of manufacturing a triode carbon nanotube field emission array according to a first embodiment of the present invention.

2A to 2K are cross-sectional views illustrating a method of manufacturing a triode carbon nanotube field emission array according to a second embodiment of the present invention.

3A to 3J are cross-sectional views illustrating a method of manufacturing a triode carbon nanotube field emission array according to a third embodiment of the present invention.

4 is a graph showing the transmittance of ultraviolet light to amorphous silicon used in the amorphous development process.

FIG. 5 is a SEM photograph of a triode carbon nanotube field emission device manufactured according to a first embodiment of the present invention.

6A and 6B are microscopic photographs of triode carbon nanotube field emission devices fabricated by negative and positive processes of an insulating material and a conductive material, respectively.

7A and 7B are SEM photographs of the triode carbon nanotube field emission arrays manufactured according to the third embodiment of the present invention.

<Description of Symbols for Important Parts of Drawings>

11, 21, 31 ... glass substrate 12, 22, 32 ... ITO electrode layer

13, 23 ... Cr electrode layer 14 ... Al thin film layer

15 ... thick insulation layer 16 ... opaque insulation layer

17, 25, 35 ... gate layers 18, 26, 36 ... carbon nanotubes

33 ... amorphous silicon layer 24, 34 ... thin film insulation layer

33 ', 34', 35 '... Hall

In the present invention to achieve the above object,

(A) forming a conductive thin film layer on the glass substrate on which the transparent electrode is deposited and exposing a predetermined portion of the transparent electrode;

(B) forming an opaque thin film layer on a predetermined portion of the exposed transparent electrode;

(C) forming an insulating layer on the transparent substrate by coating an insulating material over the glass substrate and removing the insulating material over the conductive layer and the opaque thin film layer;

(D) forming a gate layer on the insulating layer; And

(E) removing the opaque thin film layer, coating carbon nanotube paste on the exposed transparent electrode and forming carbon nanotube tips through backside exposure; tripolar carbon nanotube field emission array It provides a method for producing.

In the present invention, the step (a) may include forming a transparent electrode layer of the glass substrate in a stripe shape; Forming a conductive layer on the patterned transparent electrode; And forming a hole exposing the transparent electrode layer in a predetermined portion of the conductive layer. Alternatively, the step (a) may include forming a conductive layer on the glass substrate on which the transparent electrode layer is formed. Simultaneously patterning the electrode layer and the transparent electrode layer to form a stripe shape; And forming a hole exposing the transparent electrode layer in a predetermined portion of the conductive layer.

In the present invention, the step (c) is preferably performed by applying an insulating material over the entire surface of the glass substrate, and then performing a backside exposure on the glass substrate.

In the present invention, the step (c) includes applying and drying the insulating material over the entire surface of the glass substrate by a printing process; Removing the insulating material on the conductive layer and the opaque thin film layer by the backside exposure and development process; And sintering the remaining insulating material; to form the insulating layer by repeating two or more times.

The step (d) may include forming an opaque insulating layer in a central upper region of the insulating layer using a cathode gate pattern screen mask; Applying a conductive photosensitive paste over the entire glass substrate; And forming a gate layer by performing backside exposure on the glass substrate.

In the present invention, the step (e) may include applying a negative photosensitive carbon nanotube paste over the entire surface of the glass substrate; And forming a carbon nanotube tip only on the transparent electrode layer by performing backside exposure on the glass substrate.

In the present invention, the conductive thin film layer comprises Cr, the opaque thin film layer preferably comprises Al.

In the present invention, the insulating layer and the gate layer are preferably formed using a negative photosensitive paste.

In the present invention,

(A) forming a conductive thin film layer on the glass substrate on which the transparent electrode is deposited and exposing a predetermined portion of the transparent electrode;

(B) applying an insulating material over the glass substrate;

(C) forming and patterning a gate layer on the insulating layer to expose the insulating material on the transparent electrode;

(D) removing the insulating material on the transparent electrode to form an insulating layer and exposing a portion of the conductive thin film layer and the transparent electrode; And

(E) applying a carbon nanotube paste on the exposed transparent electrode and forming a carbon nanotube tip through back exposure, the method of manufacturing a triode carbon nanotube field emission array comprising:

In the present invention, the (c) step may include depositing a conductive material on the insulating layer using thin film equipment; And patterning a conductive material of a portion corresponding to the ITO electrode layer in the form of a hole to expose an insulating material and forming a gate layer.

In the present invention, the step (d) is preferably performed by a dry etching process on the glass substrate.

In the present invention, the step (e) may include applying a negative photosensitive carbon nanotube paste over the entire surface of the glass substrate; And forming a carbon nanotube tip only on the transparent electrode layer by performing backside exposure on the glass substrate.

In the present invention, performing a PR process on the conductive material of the gate layer to form a gate layer in the form of a line; preferably further comprises a

In the present invention, it is preferable that the conductive thin film layer includes Cr, and the insulating material includes polyimide.

In this invention, it is preferable to form the said insulating layer and the said gate layer using positive photosensitive paste.

In another aspect, the present invention provides a method for producing a triode carbon nanotube field emission array, comprising: (a) sequentially forming an amorphous silicon layer and an insulating layer on a transparent substrate on which a transparent electrode is formed; (B) forming a conductive gate layer over the insulating layer and forming holes in the gate layer and the insulating layer to expose the amorphous silicon layer; (C) forming a hole in the exposed amorphous silicon layer to expose the transparent electrode layer, and applying a carbon nanotube paste to the gate layer and the hole; And (d) forming a carbon nanotube tip by developing ultraviolet rays by irradiating ultraviolet rays from the rear surface of the substrate to provide a method of manufacturing a triode carbon nanotube field emission array, the method comprising:

In the present invention, the step (b) may include forming a hole in the gate layer exposing the insulating layer by a photo-lithography process; And forming a hole in the oxide layer to expose the amorphous silicon by placing the substrate structure in an oxide etchant.

In the present invention, the (c) step may include forming a hole to expose the transparent electrode by dry etching or wet etching the amorphous silicon layer; Performing line patterning on the gate layer by a photo-lithography process; And coating carbon nanotube paste on the entire surface of the gate layer and the hole by screen printing.

Hereinafter, a method of manufacturing a triode carbon nanotube field emission device according to the present invention will be described in detail with reference to the drawings.

1A to 1J are cross-sectional views illustrating a method of manufacturing a triode carbon nanotube field emission device according to a first embodiment of the present invention. Here, a method of fabricating a gate layer using an insulating layer and a conductive thick film using a negative process will be described.

In the present invention, a transparent substrate on which a transparent electrode is formed is used. For example, by patterning a portion where ITO is formed on a glass substrate 11 on which ITO (I: Indium, T: Tin, O: Oxide) is commonly used, a stripe-shaped ITO electrode ( 12). FIG. 1A shows a cross section taken in the width direction of the ITO electrode 2 in a stripe structure with respect to a substrate subjected to a patterning process.

Next, the Cr thin film layer 13 is formed on the front surface of the glass substrate 11 and the ITO electrode 12 by using thin film equipment such as sputtering. The Cr thin film layer 13 as shown in FIG. 1B is patterned by exposing and developing the exposed Cr thin film layer 13. Although the form of the Cr thin film layer 13 is not limited, it is preferable to manufacture a form in which a hole is formed in a central portion in order to grow carbon nanotubes in a subsequent process. 1B is a cross-sectional view of the glass substrate 11 cut vertically, and the Cr thin film layer 13 is shown in a ring shape in which holes are formed in the center thereof.

Next, an Al thin film layer 14 is formed over the entire surface of the glass substrate 11, the ITO electrode 12, and the Cr thin film layer 13 using thin film equipment such as a sputter. The Al thin film layer is subjected to an exposure step and a developing step, and as shown in FIG. 1C, a pattern is formed in a dot form over a part of the ITO cathode electrode 12 and the Cr thin film layer 13. The material of the Cr thin film layer 13 and the Al thin film layer 14 is not limited to Cr and Al, and may be used as long as it has a material having etching selectivity during the etching process.

Next, an insulating material produced by using the negative photosensitive paste is applied to the entire surface of the upper portion of the glass substrate 11 on which the Cr thin film layer 13 and the Al thin film layer 14 are formed using a screen printing process. After such a process, as shown in FIG. 1D, ultraviolet rays used in a general exposure process are irradiated from the rear surface of the glass substrate 11 to be exposed. In the exposure step, the pre-formed Cr thin film layer 13 and Al thin film layer 14 are opaque and thus serve as a mask layer. Therefore, the light irradiated during the exposure cannot pass, and the exposure light can pass through the portion where the Cr thin film layer 13 and the Al thin film layer 14 are not formed.

After the exposure process and the development process, as shown in FIG. 1E, the insulating layer 15 ′ at the portion where the Cr thin film layer 13 and the Al thin film layer 14 serving as a mask is formed on the glass substrate 11. Only the insulating layer 15 of the remaining portion except for the remaining. In this case, the insulating layers 15 'and 15 are formed by using a negative photosensitive paste. In general, in the case of a thick film insulating layer, P / D / ED / F / P / D / ED / F (P: printing, D: drying) may be used in consideration of micro pin holes. , ED: exposure and development, F: sintering). In this case, since the insulating material has a transmittance of 70% or more with respect to ultraviolet light (wavelength: about 350 nm) used in a typical exposure process, ultraviolet light may pass through the exposure process.

After this process, as shown in FIG. 1F, a negative gate patterned screen mask 16 is printed on the insulating layer 15. After the opaque insulating layer 16 is printed, only a drying process is performed, and a conductive photosensitive paste is applied to the entire surface of the glass substrate 11 by a screen printing process. Thereafter, exposure is performed on the rear surface of the glass substrate 11 to form the gate electrode layer 17 as shown in FIG. 1G.

When the gate electrode layer 17 is formed and then fired, the Al thin film layer 14 having a dot shape on the ITO cathode electrode 12 is removed using an Al etchant, as shown in FIG. 1H. The hole is again formed in the center of the Cr thin film layer.

Finally, as shown in FIGS. 1I and 1J, a photosensitive carbon nanotube paste is coated on the entire upper surface of the glass substrate 11 by a printing process, and an exposure and developing process is performed on the rear surface of the glass substrate 11. Conduct. Here, the carbon nanotube paste is preferably a negative photosensitive material. Only the carbon nanotubes 18 coated on the ITO electrode layer 12 through which the exposure beam passes through the backside exposure remain, and the photosensitive carbon nanotube paste coated on the Cr thin film layer 13 and the gate electrode layer 17 Removed. Thus, the carbon nanotube tip layer 18 is formed in the hole portion of the ring-shaped Cr thin film layer 13.

In the above process, since the Cr thin film layer 13 and the Al thin film layer 14 play a role, there is no need to separately fabricate a photomask on the substrate when the cathode electrode is formed, so that an aligner is not necessary in a subsequent process. In addition, since the multilayer film formed on the upper part becomes self-alignment, an alignment error caused by deformation of the glass due to the firing process required for each layer when forming the multilayer film and an error of the aligner itself generated when using an aligner for each layer In addition, since the distance between the tip and the gate of the carbon nanotube can be narrowed, the field emission voltage can be greatly reduced.

A second embodiment of the present invention will be described in more detail with reference to FIGS. 2A-2K. 2A to 2K are cross-sectional views illustrating a manufacturing process of a triode carbon nanotube field emission device according to the present invention using an insulating material and a conductive material using a positive paste.

First, as shown in FIG. 2A, the Cr thin film layer 23 is formed on the entire surface of the glass substrate 21 on which the ITO 22, which is commonly used as a transparent electrode, is deposited, using thin film manufacturing equipment such as sputter.

The Cr thin film layer 23 is exposed and developed to form a Cr cathode electrode 23 layer. As shown in FIG. 2B and FIG. 2C, the Cr electrode layer 23 and the ITO electrode layer 22 were formed in a stripe shape at the same time, and then ring-shaped holes were formed in the Cr electrode layer 23 again. After the Cr electrode layer 23 is formed, an etching process is performed on the glass substrate 21 using an ITO etchant. As shown in FIG. 2B, a portion where the Cr electrode layer 23 is not formed is formed. The ITO electrode layer 22 is etched, and as a result, the Cr electrode layer 23 and the ITO electrode layer 22 are aligned in the same form to form a cathode electrode. Thereafter, as illustrated in FIG. 2C, a ring-shaped hole is formed by performing exposure and development steps on the Cr cathode electrode 10 layer. The hole becomes a region for forming carbon nanotubes in a subsequent process.

Next, as shown in FIG. 2D, an insulating material 24 is coated on the glass substrate 21 in the form of a thick film. As the insulating material, for example, it is preferable to use a polyimide that is excellent in insulation and temperature characteristics and easily forms a thick film. The insulating layer 24 is deposited on the glass substrate 21 and the Cr electrode layer 23 over the entire surface by spin coating, and then cured.

Next, as shown in FIG. 2E, the conductive material 25 is deposited on the insulating layer 24 using thin film equipment, and then the gate layer is patterned by patterning the deposited conductive layer 25 as shown in FIG. 2F. (25) is formed. Here, the site | part removed by patterning is the site | part in which the ITO electrode layer 22 was formed, and it is preferable to form in hole shape. Thus, the remaining portion serves as the gate furnace layer 25. Then, as shown in FIG. 2G, the gate layer is patterned using a dry etching process to remove the insulating material 24 ′ of the exposed hole portions. In the first embodiment, the insulating material 15 'is removed by exposure on the rear surface of the substrate, but the insulating material 24' is removed by a dry etching process on the entire surface of the substrate.

After the insulating material 24 'is removed, the ITO electrode layer 22 is exposed in the hole region of the Cr electrode layer 23 as shown in FIG. 2H. In this state, as shown in FIG. 2I, a photosensitive carbon nanotube paste is coated on the glass substrate 21 by a screen printing process, and an exposure and development process is performed on the rear surface of the glass substrate 21. Here, the carbon nanotube paste is preferably a negative photosensitive paste as in the first embodiment. Thus, as shown in FIG. 2J, the carbon nanotube tip layer 26 is formed in the hole region of the Cr thin film layer. Finally, as shown in FIG. 2K, the gate layer 25 is subjected to a general PR process to form the gate layer 25 in a line shape.

Compared to the case where the positive photosensitive insulating material and the conductive material are used, the process of using the positive photosensitive insulating material and the conductive material should be aligned separately between the hole portions of the gate layer and the insulating layer, but the tip of the carbon nanotube It is automatically aligned and has a simpler advantage in other processes.

A third embodiment according to the present invention will be described in more detail with reference to FIGS. 3A to 3J.

3A to 3J are cross-sectional views illustrating a process of manufacturing a triode carbon nanotube field emission device using optical properties of an amorphous silicon layer used as a resistive layer in a field emission display device.

First, as shown in FIG. 3A, a material used as the transparent electrode 32 is deposited on the transparent substrate 31. A glass substrate may be used as the transparent substrate 31, and ITO, which is commonly used, may be deposited as the transparent electrode 32. The transparent electrode 32 is formed in a stripe shape using a photo-lithography process.

Next, as shown in FIG. 3B, amorphous silicon (Amorphous-Si) 33 is coated on the substrate 31 and the transparent electrode 32 using PECVD equipment or the like. Then, as shown in FIG. 3C, an oxide layer 34 used as an insulating layer is formed on the amorphous silicon layer 33 in-situ. After the oxide layer 34 is formed, a conductive gate layer 35, for example Cr, is deposited thereon as shown in FIG. 3D. A hole 35 ′ is formed in the gate layer 35 by the photo-lithography process. (FIG. 3E) The hole 35 ′ is formed corresponding to a portion where the transparent electrode 32 is located. In this state, holes 34 'are formed in the oxide layer 34 so as to expose the amorphous silicon layer 33 as shown in FIG. 3F with the thin film layers formed on the substrate. At this time, a hole 33 'exposing the transparent electrode 32 is formed by using dry-etching (wet etching) or wet-etching (wet etching) on the exposed amorphous silicon layer 33 (FIG. 3G). Then, line patterning is performed on the gate layer 35 on the oxide layer 34 by a photo-lithography process (FIG. 3H).

Next, the carbon nanotube paste 36 is coated on the entire surface on the structure as shown in FIG. 3I by screen printing or the like. Finally, an ultraviolet beam is scanned from the rear surface of the substrate 31 to form a carbon nanotube field emission emitter as shown in FIG. 3J through a development process. In this case, when the ultraviolet rays are scanned from the rear surface of the substrate 31, an amorphous silicon layer 33 formed during the process is used, rather than using a separate photomask like other photo-lithography processes. The amorphous silicon layer 33 is generally a material used for improving the uniformity in the field emission display. Referring to FIG. 4, it can be seen that amorphous silicon has a very low transmittance to ultraviolet rays used in a developing process.

FIG. 5 is a SEM photograph of a triode carbon nanotube field emission device fabricated by the present invention, wherein an insulating material and a conductive material are prepared using a negative photosensitive paste. As shown in the photograph, even when multilayer films such as the insulating layer 15 and the gate layer 17 are formed, the results are self-aligned without the need for alignment.

6A and 6B are planar SEM photographs of triode carbon nanotube field emission devices fabricated with an insulating material and a conductive material using negative and positive photosensitive pastes, respectively. 6A shows a state in which a hole has a size of about 60 μm using a negative photosensitive paste, and since the carbon nanotube tip has not been formed yet, the hole region is bright due to the ITO electrode layer 12. Fig. 6B shows a state in which the size of the hole is about 40 mu m, using a positive photosensitive paste. In this case, since the carbon nanotube tip 26 is formed inside the hole, the hole part is shown in a dark color. As shown in the figure, the Cr electrode layer 23 is formed on the glass substrate 21 in a stripe shape.

7A and 7B are SEM photographs of the triode carbon nanotube field emission devices fabricated according to the present invention. In both cases, an insulating material and a conductive material were prepared using a positive photosensitive paste. Here, 7a is a photograph of the surface of the device at an angle of about 30 degrees, and it can be seen that carbon nanotube tips 26 are formed in the hole formed in the gate electrode line pattern 25. Here, the diameter of the hole is about 40 µm. FIG. 7B is a photograph showing a cross section of the carbon nanotube tip 26 formed directly inside the hole, and it can be seen that the insulating layer 24 and the gate layer 25 formed of polyimide are well aligned. .

According to the present invention, the screen printing process and the etching process using the negative or positive photosensitive paste can solve the alignment problem of the multilayer film without using a separate aligner, and also mask the thin film layer itself manufactured in the process. By using the layer, a carbon nanotube field emission array having a triode structure can be easily manufactured using a small number of mask layers.

Claims (21)

In the manufacturing method of triode carbon nanotube field emission array, (A) forming a conductive thin film layer on the transparent substrate on which the transparent electrode is deposited and exposing a predetermined portion of the transparent electrode; (B) forming an opaque thin film layer on a predetermined portion of the exposed transparent electrode; (C) forming an insulating layer on the transparent substrate by coating an insulating material over the transparent substrate and removing the insulating material over the conductive layer and the opaque thin film layer; (D) forming a gate layer on the insulating layer; And (E) removing the opaque thin film layer, applying carbon nanotube paste on the exposed transparent electrode and forming carbon nanotube tips through backside exposure; tripolar carbon nanotube field emission array Method of preparation. The method of claim 1, The step (a) may include forming a stripe pattern by patterning the transparent electrode of the transparent substrate; Forming a conductive layer on the patterned transparent electrode; And Forming a hole exposing the transparent electrode at a predetermined portion of the conductive layer; and manufacturing a triode carbon nanotube field emission array. The method of claim 1, The step (a) may include forming a conductive layer on the transparent substrate on which the transparent electrode is formed; Simultaneously patterning the electrode layer and the transparent electrode to form a stripe shape; And Forming a hole exposing the transparent electrode in a predetermined portion of the conductive layer; and manufacturing a triode carbon nanotube field emission array. The method of claim 1, The step (c) is a method of manufacturing a triode carbon nanotube field emission array, characterized in that by applying an insulating material over the entire surface over the transparent substrate, and performing a back exposure to the transparent substrate. The method of claim 4, wherein The step (c) may include applying and drying the insulating material over the entire surface of the transparent substrate by a printing process; Removing the insulating material on the conductive layer and the opaque thin film layer by the backside exposure and development process; And And sintering the remaining insulating material; to form the insulating layer by repeating the at least two times. The method of claim 1, The step (d) may include forming an opaque insulating layer in a central upper region of the insulating layer using a cathode gate pattern screen mask; Applying a conductive photosensitive paste over the transparent substrate over the entire surface; And And forming a gate layer by performing backside exposure on the transparent substrate. 2. A method of manufacturing a triode carbon nanotube field emission array comprising: The method of claim 1, The step (e) may include applying a negative photosensitive carbon nanotube paste on the transparent substrate over the entire surface; And Forming a carbon nanotube tip only on the transparent electrode by performing a backside exposure on the transparent substrate; and manufacturing a triode carbon nanotube field emission array. The method according to any one of claims 1 to 7, The conductive thin film layer comprises Cr, the opaque thin film layer is a method of manufacturing a triode carbon nanotube field emission array characterized in that it comprises Al. The method according to any one of claims 1 to 7, The insulating layer and the gate layer is a method of manufacturing a triode carbon nanotube field emission array, characterized in that formed using a negative photosensitive paste. In the manufacturing method of triode carbon nanotube field emission array, (A) forming a conductive thin film layer on the transparent substrate on which the transparent electrode is deposited and exposing a predetermined portion of the transparent electrode; (B) completely applying an insulating material on the transparent substrate; (C) forming and patterning a gate layer on the insulating layer to expose the insulating material on the transparent electrode; (D) removing the insulating material on the transparent electrode to form an insulating layer and exposing a portion of the conductive thin film layer and the transparent electrode; And (E) coating a carbon nanotube paste on the exposed transparent electrode and forming a carbon nanotube tip through a back exposure, wherein the method of manufacturing a triode carbon nanotube field emission array is provided. The method of claim 10, The step (a) may include forming a stripe pattern by patterning the transparent electrode of the transparent substrate; Forming a conductive layer on the patterned transparent electrode; And Forming a hole exposing the transparent electrode at a predetermined portion of the conductive layer; and manufacturing a triode carbon nanotube field emission array. The method of claim 10, The step (a) may include forming a conductive layer on the transparent substrate on which the transparent electrode is formed; Simultaneously patterning the electrode layer and the transparent electrode to form a stripe shape; And Forming a hole exposing the transparent electrode at a predetermined portion of the conductive layer; and manufacturing a triode carbon nanotube field emission array. The method of claim 10, The step (c) includes depositing a conductive material on the insulating layer using thin film equipment; And And patterning a conductive material of a portion corresponding to the ITO electrode layer in the form of a hole to expose an insulating material and to form a gate layer. The method of claim 10, The step (d) is a method of manufacturing a triode carbon nanotube field emission array, characterized in that by the dry etching process on the transparent substrate. The method of claim 10, The step (e) may include applying a negative photosensitive carbon nanotube paste on the transparent substrate over the entire surface; And Forming a carbon nanotube tip only on the transparent electrode by performing a backside exposure on the transparent substrate; and manufacturing a triode carbon nanotube field emission array. The method of claim 10, And forming a line-type gate layer by performing a PR process on the conductive material of the gate layer. The method according to any one of claims 10 to 16, The conductive thin film layer includes Cr, and the insulating material is a method of manufacturing a triode carbon nanotube field emission array, characterized in that the polyimide. The method according to any one of claims 10 to 16, And the insulating layer and the gate layer are formed using a positive photosensitive paste. In the manufacturing method of triode carbon nanotube field emission array, (A) sequentially forming an amorphous silicon layer and an insulating layer on the transparent substrate on which the transparent electrode is formed; (B) forming a conductive gate layer over the insulating layer and forming holes in the gate layer and the insulating layer to expose the amorphous silicon layer; (C) forming a hole in the exposed amorphous silicon layer to expose the transparent electrode layer, and applying a carbon nanotube paste to the gate layer and the hole; And (D) forming a carbon nanotube tip by developing by scanning ultraviolet rays from the rear surface of the substrate. The method of claim 19, The step (b) may include forming a hole in the gate layer exposing the insulating layer in a photo-lithography process; And And inserting the substrate structure into an oxide etchant to form holes in the oxide layer so that the amorphous silicon is exposed. The method of claim 19, The step (c) may include forming holes to expose the transparent electrode by dry etching or wet etching the amorphous silicon layer; Performing line patterning on the gate layer by a photo-lithography process; And And coating a carbon nanotube paste on the entire surface of the gate layer and the hole by screen printing. 2.