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JPWO2022201903A1 - - Google Patents

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Publication number
JPWO2022201903A1
JPWO2022201903A1 JP2023508743A JP2023508743A JPWO2022201903A1 JP WO2022201903 A1 JPWO2022201903 A1 JP WO2022201903A1 JP 2023508743 A JP2023508743 A JP 2023508743A JP 2023508743 A JP2023508743 A JP 2023508743A JP WO2022201903 A1 JPWO2022201903 A1 JP WO2022201903A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023508743A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022201903A1 publication Critical patent/JPWO2022201903A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
JP2023508743A 2021-03-22 2022-02-04 Pending JPWO2022201903A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021047913 2021-03-22
PCT/JP2022/004481 WO2022201903A1 (ja) 2021-03-22 2022-02-04 半導体装置

Publications (1)

Publication Number Publication Date
JPWO2022201903A1 true JPWO2022201903A1 (ja) 2022-09-29

Family

ID=83396915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023508743A Pending JPWO2022201903A1 (ja) 2021-03-22 2022-02-04

Country Status (5)

Country Link
US (1) US20240014275A1 (ja)
JP (1) JPWO2022201903A1 (ja)
CN (1) CN116998020A (ja)
DE (1) DE112022000700T5 (ja)
WO (1) WO2022201903A1 (ja)

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* Cited by examiner, † Cited by third party
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TWI825508B (zh) * 2021-11-11 2023-12-11 力晶積成電子製造股份有限公司 半導體結構
DE102022105886A1 (de) * 2022-03-14 2023-09-14 Infineon Technologies Ag Halbleitervorrichtung mit makrozellen
CN117238771A (zh) * 2022-06-08 2023-12-15 群创光电股份有限公司 降低基板翘曲的电子装置制作方法
WO2024241882A1 (ja) * 2023-05-22 2024-11-28 ローム株式会社 半導体装置

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JP2008004772A (ja) * 2006-06-22 2008-01-10 Denso Corp 半導体装置および半導体ウエハ
JP2008205484A (ja) * 2007-02-16 2008-09-04 Power Integrations Inc 格子状レイアウトを有するトランジスタのゲート金属ルーティング
WO2014097488A1 (ja) * 2012-12-21 2014-06-26 トヨタ自動車株式会社 半導体装置
JP2015138789A (ja) * 2014-01-20 2015-07-30 トヨタ自動車株式会社 半導体装置

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KR101481878B1 (ko) * 2010-04-06 2015-01-12 미쓰비시덴키 가부시키가이샤 전력용 반도체 장치, 파워 모듈 및 전력용 반도체 장치의 제조 방법
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JP7461218B2 (ja) * 2020-05-22 2024-04-03 ローム株式会社 半導体装置
JP7530757B2 (ja) * 2020-07-09 2024-08-08 新電元工業株式会社 半導体装置及び半導体装置の製造方法
JP7319754B2 (ja) * 2020-08-19 2023-08-02 株式会社東芝 半導体装置
JP7392612B2 (ja) * 2020-08-26 2023-12-06 株式会社デンソー 半導体装置
JP7526152B2 (ja) * 2021-09-15 2024-07-31 株式会社東芝 半導体装置
JP7771642B2 (ja) * 2021-11-09 2025-11-18 富士電機株式会社 半導体装置および半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233765A (ja) * 1998-02-12 1999-08-27 Toshiba Corp 半導体装置および半導体装置の製造方法
JP2008004772A (ja) * 2006-06-22 2008-01-10 Denso Corp 半導体装置および半導体ウエハ
JP2008205484A (ja) * 2007-02-16 2008-09-04 Power Integrations Inc 格子状レイアウトを有するトランジスタのゲート金属ルーティング
WO2014097488A1 (ja) * 2012-12-21 2014-06-26 トヨタ自動車株式会社 半導体装置
JP2015138789A (ja) * 2014-01-20 2015-07-30 トヨタ自動車株式会社 半導体装置

Also Published As

Publication number Publication date
DE112022000700T5 (de) 2023-11-09
CN116998020A (zh) 2023-11-03
US20240014275A1 (en) 2024-01-11
WO2022201903A1 (ja) 2022-09-29

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