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JPWO2021002090A1 - - Google Patents

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Publication number
JPWO2021002090A1
JPWO2021002090A1 JP2021529895A JP2021529895A JPWO2021002090A1 JP WO2021002090 A1 JPWO2021002090 A1 JP WO2021002090A1 JP 2021529895 A JP2021529895 A JP 2021529895A JP 2021529895 A JP2021529895 A JP 2021529895A JP WO2021002090 A1 JPWO2021002090 A1 JP WO2021002090A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021529895A
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JP7673637B2 (ja
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Publication of JPWO2021002090A1 publication Critical patent/JPWO2021002090A1/ja
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Publication of JP7673637B2 publication Critical patent/JP7673637B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
JP2021529895A 2019-07-02 2020-05-06 撮像素子、積層型撮像素子及び固体撮像装置 Active JP7673637B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019123549 2019-07-02
JP2019123549 2019-07-02
PCT/JP2020/018477 WO2021002090A1 (ja) 2019-07-02 2020-05-06 撮像素子、積層型撮像素子及び固体撮像装置

Publications (2)

Publication Number Publication Date
JPWO2021002090A1 true JPWO2021002090A1 (ja) 2021-01-07
JP7673637B2 JP7673637B2 (ja) 2025-05-09

Family

ID=74100555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021529895A Active JP7673637B2 (ja) 2019-07-02 2020-05-06 撮像素子、積層型撮像素子及び固体撮像装置

Country Status (6)

Country Link
US (1) US12262572B2 (ja)
EP (1) EP3996138A4 (ja)
JP (1) JP7673637B2 (ja)
CN (1) CN113924648B (ja)
TW (1) TWI907351B (ja)
WO (1) WO2021002090A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7428131B2 (ja) * 2018-09-04 2024-02-06 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
FR3117268B1 (fr) * 2020-12-08 2022-12-09 St Microelectronics Crolles 2 Sas Pixel d'un capteur de lumière et son procédé de fabrication
WO2023100632A1 (ja) * 2021-12-01 2023-06-08 パナソニックＩｐマネジメント株式会社 撮像素子の制御方法およびカメラシステム
WO2025018087A1 (ja) * 2023-07-14 2025-01-23 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120055534A1 (en) * 2010-09-08 2012-03-08 Applied Materials, Inc. Photovoltaic Devices with High Work-Function TCO Buffer Layers and Methods of Manufacture
WO2014021177A1 (ja) * 2012-08-02 2014-02-06 ソニー株式会社 半導体素子、半導体素子の製造方法、固体撮像装置、および電子機器
WO2016009693A1 (ja) * 2014-07-17 2016-01-21 ソニー株式会社 光電変換素子、撮像装置、光センサ及び光電変換素子の製造方法
JP2016063165A (ja) * 2014-09-19 2016-04-25 株式会社東芝 撮像素子及び固体撮像装置
JP2016062997A (ja) * 2014-09-16 2016-04-25 ソニー株式会社 撮像素子、固体撮像装置及び電子デバイス
JP2017017200A (ja) * 2015-07-01 2017-01-19 株式会社ソニー・インタラクティブエンタテインメント 撮像素子、イメージセンサ、および情報処理装置
WO2018139110A1 (ja) * 2017-01-24 2018-08-02 ソニーセミコンダクタソリューションズ株式会社 受光素子、受光素子の製造方法、撮像素子および電子機器
WO2018194051A1 (ja) * 2017-04-21 2018-10-25 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP2018182314A (ja) * 2017-04-10 2018-11-15 パナソニックＩｐマネジメント株式会社 撮像装置
WO2019044103A1 (ja) * 2017-08-31 2019-03-07 ソニーセミコンダクタソリューションズ株式会社 撮像素子、積層型撮像素子及び固体撮像装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008177191A (ja) 2007-01-16 2008-07-31 Matsushita Electric Ind Co Ltd 固体撮像装置およびそれを用いたカメラ
JP5509846B2 (ja) 2009-12-28 2014-06-04 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
US9070779B2 (en) 2012-12-18 2015-06-30 Cbrite Inc. Metal oxide TFT with improved temperature stability
CN107924930B (zh) * 2015-08-19 2022-07-15 索尼公司 绝缘材料、电子器件和成像装置
US11641750B2 (en) 2018-07-17 2023-05-02 Sony Semiconductor Solutions Corporation Image pickup element, stacked image pickup element, and solid image pickup apparatus

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120055534A1 (en) * 2010-09-08 2012-03-08 Applied Materials, Inc. Photovoltaic Devices with High Work-Function TCO Buffer Layers and Methods of Manufacture
WO2014021177A1 (ja) * 2012-08-02 2014-02-06 ソニー株式会社 半導体素子、半導体素子の製造方法、固体撮像装置、および電子機器
WO2016009693A1 (ja) * 2014-07-17 2016-01-21 ソニー株式会社 光電変換素子、撮像装置、光センサ及び光電変換素子の製造方法
JP2016062997A (ja) * 2014-09-16 2016-04-25 ソニー株式会社 撮像素子、固体撮像装置及び電子デバイス
JP2016063165A (ja) * 2014-09-19 2016-04-25 株式会社東芝 撮像素子及び固体撮像装置
JP2017017200A (ja) * 2015-07-01 2017-01-19 株式会社ソニー・インタラクティブエンタテインメント 撮像素子、イメージセンサ、および情報処理装置
WO2018139110A1 (ja) * 2017-01-24 2018-08-02 ソニーセミコンダクタソリューションズ株式会社 受光素子、受光素子の製造方法、撮像素子および電子機器
JP2018182314A (ja) * 2017-04-10 2018-11-15 パナソニックＩｐマネジメント株式会社 撮像装置
WO2018194051A1 (ja) * 2017-04-21 2018-10-25 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
WO2019044103A1 (ja) * 2017-08-31 2019-03-07 ソニーセミコンダクタソリューションズ株式会社 撮像素子、積層型撮像素子及び固体撮像装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
細野秀雄，外2名: "アモルファス酸化物半導体を能動層とする透明フレキシブルトランジスタ", 応用物理, vol. 第74巻第7号, JPN6024046888, 2005, JP, pages 910 - 916, ISSN: 0005468516 *

Also Published As

Publication number Publication date
EP3996138A4 (en) 2022-09-14
CN113924648A (zh) 2022-01-11
JP7673637B2 (ja) 2025-05-09
WO2021002090A1 (ja) 2021-01-07
TWI907351B (zh) 2025-12-11
US20220367572A1 (en) 2022-11-17
CN113924648B (zh) 2025-09-16
EP3996138A1 (en) 2022-05-11
US12262572B2 (en) 2025-03-25
TW202129935A (zh) 2021-08-01

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