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JPS6383655A - Semiconductor dew sensor - Google Patents

Semiconductor dew sensor

Info

Publication number
JPS6383655A
JPS6383655A JP23040486A JP23040486A JPS6383655A JP S6383655 A JPS6383655 A JP S6383655A JP 23040486 A JP23040486 A JP 23040486A JP 23040486 A JP23040486 A JP 23040486A JP S6383655 A JPS6383655 A JP S6383655A
Authority
JP
Japan
Prior art keywords
electrode
film
case
dew condensation
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23040486A
Other languages
Japanese (ja)
Inventor
Takashi Araki
荒木 隆志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP23040486A priority Critical patent/JPS6383655A/en
Publication of JPS6383655A publication Critical patent/JPS6383655A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

PURPOSE:To prevent the peeling of an electrode part, etc., from generating, and malfunction from occurring, by disusing a gold wire, and covering a part other than a dewed film part, with resin, etc. CONSTITUTION:At least two lead wires 21 almost in parallel pierce the side wall plane of a cup-shaped resin case 22, and are arranged protrusively so as to be positioned along the bottom plane side 25. Also, an electrode 28 is evaporated on a silicon substrate 27 forming a semiconductor 26, and electrode terminals 29 are formed on both sides of the electrode 28 on almost the same line. And a dewed film 30 superior in hygroscopicity is coated on the electrode 28, and the film 30 is extended to the bottom plane side 25 so as to be arranged between wires 21, and also, the element 26 is bonded on the case 22 so that the terminals 29 is dewed at both sides of the film 30, and the wires 21 are connected electrically with each other. Also, a through hole 31 is formed at the bottom plane 25 of the case 22, and when the element 26 is loaded on the case 22, for example, the thermosetting resin, etc., is filled, thereby, the element 26, the wire 21, etc., are fixed and enhanced. When moisture invades, the film 30 absorbs the moisture, and the resistance value of the film 30 is increased according to the moisture rise, the change of the resistance value is transmitted to an operation circuit part.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体結露センサに関するものである0 従来の技術 近年、自動車用窓ガラス、建材、VTRその他の精密機
器などでの結露発生が問題となっている。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor dew condensation sensor.0 Prior Art In recent years, dew condensation on automobile window glasses, building materials, VTRs, and other precision equipment has become a problem. ing.

例えば、家庭用VTRにおいては、センサ技術編集部編
「センサデバイスハンドブック」情報調査会発行第28
6頁の「応用」に記載されている。
For example, for home VTRs, "Sensor Device Handbook" edited by Sensor Technology Editorial Department, published by Information Research Group, No.
It is described in "Applications" on page 6.

以下に従来の半導体センサについて説明する。A conventional semiconductor sensor will be explained below.

第4図は、従来の半導体結露センサの要部破断側面図を
示し、図において、ガラス基板1上に金属膜2を被覆し
、この金属膜に複数ケ所窓部3が設けられている。そし
てガラス基板1を貫通し、金属膜2の窓部3のほぼ中央
部に金属膜2と非接触に突出するリード線4が配設され
ている。このリード線4と所定の間隔を有し、金属膜2
上に半導体素子6が載設されている。
FIG. 4 shows a cutaway side view of a main part of a conventional semiconductor dew condensation sensor. In the figure, a metal film 2 is coated on a glass substrate 1, and a plurality of windows 3 are provided in this metal film. A lead wire 4 is provided that penetrates the glass substrate 1 and projects approximately at the center of the window 3 of the metal film 2 without contacting the metal film 2. The metal film 2 has a predetermined distance from the lead wire 4.
A semiconductor element 6 is placed thereon.

半導体素子5は、第5図に示すように電極6が蒸着され
たシリコン基板T上に吸湿性に優れた樹脂と炭素粉の分
散体からなる抵抗膜で形成された結露膜8が塗布されて
構成されている。そして電極6の端子9とリード線4と
は例えば線径が数十ミクロン≠す≠寞Φ≠の細い金線1
0により電気的に接続されている。上述した半導体素子
5、金線10.IJ−ド線4および金属膜2はそれぞれ
コツプ状のメタルキャップ11で被覆保護されている。
As shown in FIG. 5, the semiconductor element 5 includes a silicon substrate T on which electrodes 6 are deposited, and a dew condensation film 8 formed of a resistive film made of a dispersion of resin and carbon powder with excellent hygroscopic properties is applied. It is configured. The terminal 9 of the electrode 6 and the lead wire 4 are, for example, a thin gold wire 1 with a wire diameter of several tens of microns ≠ Φ ≠
It is electrically connected by 0. The above-mentioned semiconductor element 5, gold wire 10. The IJ-domain wire 4 and the metal film 2 are each covered and protected by a metal cap 11 in the shape of a pot.

このキャップの上面で半導体素子5の近傍には、透孔1
2が穿設され、この透孔には例えば網状の通気性に優れ
たメツシュ13が貼設されている。
There is a through hole 1 in the vicinity of the semiconductor element 5 on the upper surface of this cap.
2 is bored, and a mesh 13 having, for example, a net shape and excellent air permeability is attached to this through hole.

以上に説明した半導体結露センサについて以下その動作
を説明する。
The operation of the semiconductor dew condensation sensor described above will be described below.

例えば、家庭用VTR等結露が発生し易い機器の高湿度
領域に上記半導体結露センサを配設すると、通気性に優
れたメツシュ13を通して湿気がメタルキャップ11の
内部へ侵入する。すると、吸湿性に優れた抵抗膜からな
る結露膜8が湿度を吸収し、この湿度上昇に伴って結露
膜8の抵抗値を増加させる性質を備えているので、この
抵抗値の変化を動作回路部(図示せず)に伝達させて高
湿度領域を乾燥させる手段を作動させるものである。
For example, if the semiconductor dew condensation sensor is placed in a high humidity area of a device such as a home VTR where dew condensation is likely to occur, moisture will enter the metal cap 11 through the mesh 13 which has excellent ventilation. Then, the dew condensation film 8 made of a resistive film with excellent hygroscopicity absorbs humidity, and as the humidity increases, the resistance value of the dew condensation film 8 increases. (not shown) to activate means for drying the high humidity area.

発明が解決しようとする問題点 しかしながら、上記従来の構成によれば、メタルキャッ
プ内の半導体素子の電極部或いは金線は常時、高湿度領
域にさらされていることになるので、電極部の劣化によ
る金線の剥離等の事故がしばしば発生し、誤動作につな
がるなどという問題があった。本発明は、上記従来の問
題点を解決する半導体結露センサを提供することを目的
とする。
Problems to be Solved by the Invention However, according to the above-mentioned conventional configuration, the electrode part or the gold wire of the semiconductor element inside the metal cap is constantly exposed to a high humidity region, so that deterioration of the electrode part may occur. Accidents such as peeling of the gold wire often occur, leading to malfunctions. An object of the present invention is to provide a semiconductor dew condensation sensor that solves the above conventional problems.

問題点を解決するための手段 この目的を達成するために本発明の半導体結露センサは
、金線を廃止し、結露膜部以外を樹脂等により被覆する
構成を有している。
Means for Solving the Problems In order to achieve this object, the semiconductor dew condensation sensor of the present invention has a structure in which the gold wire is eliminated and the parts other than the dew condensation film are covered with resin or the like.

作  用 この構成により、常時高湿度領域にある半導体結露セン
サの電極部等の剥離がなくなり、誤動作を防止すること
ができる。
Function: This configuration eliminates peeling of the electrode portion of the semiconductor dew condensation sensor, which is always in a high humidity region, and prevents malfunctions.

実施例 以下に本発明の一実施例について、図面を用いて説明す
る。第1図は、本発明実施による半導体結露センサの要
部破断斜視図、第2図は、本発明に用いられる半導体素
子の要部斜視図、第3図は半導体素子を接着後この素子
を補強する経過を示している。
EXAMPLE An example of the present invention will be described below with reference to the drawings. Fig. 1 is a cutaway perspective view of the main parts of a semiconductor dew condensation sensor according to the present invention, Fig. 2 is a perspective view of the main parts of a semiconductor element used in the present invention, and Fig. 3 is a reinforcement of this element after bonding the semiconductor element. It shows the progress of the process.

図において、はぼ平行に配設された少くとも2本のリー
ド線21がコツプ状樹脂ケース22の側壁面23を貫通
して内部室間24の底面側26に沿うように突設されて
いる。また、半導体素子26を形成するシリコン基板2
7上に電極28が蒸着され、この電極の両側にはほぼ同
一線上に各々電極端子29が形成されている。そして、
電極28上に吸湿性に優れた結露膜30が塗布され、こ
の結露膜が平行に配設されたリード線21間に配設され
るようにケース22の底面側26に向うとともに結露膜
30の両側で露出する電極端子29とリード線21とが
それぞれ電気的に接続されるように半導体素子26が接
着される。ケース22の底面側25には、結露膜部30
と対向する位置および大きさに相当する透孔31が形成
されている。
In the figure, at least two lead wires 21 arranged substantially in parallel penetrate the side wall surface 23 of the plastic case 22 and protrude along the bottom surface 26 of the internal chamber 24. . Also, the silicon substrate 2 on which the semiconductor element 26 is formed
An electrode 28 is deposited on the electrode 7, and electrode terminals 29 are formed on both sides of the electrode in substantially the same line. and,
A dew condensation film 30 with excellent hygroscopicity is applied on the electrode 28, and the dew condensation film 30 is directed toward the bottom side 26 of the case 22 so as to be disposed between the lead wires 21 arranged in parallel. The semiconductor element 26 is bonded so that the electrode terminals 29 and the lead wires 21 exposed on both sides are electrically connected to each other. On the bottom side 25 of the case 22, there is a dew condensation film part 30.
A through hole 31 is formed in a position and size corresponding to the position facing the .

ケース22に半導体素子26が接着されると、ベーキン
グ等の工程を経てケース22の開口部33側から例えば
熱硬化性樹脂34等を充填し、半導体素子26、リード
線21等を固定、補強する。
When the semiconductor element 26 is bonded to the case 22, a thermosetting resin 34 or the like is filled from the opening 33 side of the case 22 through a process such as baking to fix and reinforce the semiconductor element 26, lead wires 21, etc. .

以上に説明した本発明の実施例についてその動作は従来
例とほぼ同一のため省略する。
The operation of the embodiment of the present invention described above is almost the same as that of the conventional example, so a description thereof will be omitted.

なお、本実施例の構成中、リード線21の形状について
は特に説明を省略したが、半導体素子26の電極端子2
9と接続される部分は、例えば板状体として接続が容易
となる構造であってもよく、また、湿気が通過する透孔
31部には、従来例と同様にメツシュを貼付してもよい
ことはいうまでもない。
Note that in the configuration of this embodiment, the shape of the lead wire 21 is not particularly explained, but the shape of the electrode terminal 2 of the semiconductor element 26 is
The part connected to 9 may have a structure that facilitates the connection, for example, as a plate-like body, and a mesh may be attached to the through hole 31 part through which moisture passes, as in the conventional example. Needless to say.

発明の効果 以上に説明したように本発明の半導体結露センサによれ
ば、電極部とリード線部間とを継ぐ金線を廃止すること
ができるとともに、電極端子部が直接高湿度領域にさら
されることが少なくなるので金線の剥離等の事故が発生
しなくなる。また、高価な金線を廃止することにより部
品コストも犬幅に下がり、原価低減に寄与するすこぶる
優れた半導体結露センサを提供することができる。
Effects of the Invention As explained above, according to the semiconductor dew condensation sensor of the present invention, it is possible to eliminate the gold wire connecting the electrode part and the lead wire part, and the electrode terminal part is directly exposed to a high humidity area. This reduces the possibility of accidents such as peeling of the gold wire. Furthermore, by eliminating expensive gold wires, the cost of parts can be drastically reduced, making it possible to provide an extremely superior semiconductor dew condensation sensor that contributes to cost reduction.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例による半導体結露センサの要
部破断斜視図、第2図は本発明に用いられる半導体素子
の要部斜視図、第3図は本発明の半導体素子の要部破断
側面図、第4図は従来の半導体結露センサの要部破断側
面図、第6図は従来例に用いられる半導体素子の要部斜
視図である。 22・・・・・コツプ状樹脂ケース、26・・・・・・
半導体素子、2B・・・・・・電極、29・・・・・電
極端子、3o・・・・・・結露膜。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名21
−−−リード裸 22−一一コツブ状臭脂ケース 26−−− ′+傳儲ぶ 27−−−電a瑞子 30−一一緒露づ罠 53□        3′−一透孔 33−−−開口鼾 34−−一熟便七町脂等 (久) 第5図
FIG. 1 is a perspective view of a main part of a semiconductor dew condensation sensor according to an embodiment of the present invention, FIG. 2 is a perspective view of a main part of a semiconductor device used in the present invention, and FIG. 3 is a main part of a semiconductor device of the present invention. FIG. 4 is a cutaway side view of a main part of a conventional semiconductor dew condensation sensor, and FIG. 6 is a perspective view of a main part of a semiconductor element used in a conventional example. 22...Cop-shaped resin case, 26...
Semiconductor element, 2B... electrode, 29... electrode terminal, 3o... dew condensation film. Name of agent: Patent attorney Toshio Nakao and 1 other person21
---Lead bare 22-11 stink-like odor case 26--'+den 27---electron a Mizuko 30-1 exposed trap 53□ 3'-1 through hole 33--- Open-mouthed snoring 34--Ichijubin Shichicho Futoshi (Kyu) Figure 5

Claims (1)

【特許請求の範囲】[Claims] シリコン基板上のほぼ中央部に蒸着された電極とこの電
極の両側にほぼ同一線上に配設された電極端子と上記電
極上に塗布された結露膜とからなる半導体素子と、コッ
プ状樹脂ケースおよびこのケースの底面側の側壁面を貫
通してケース内部空間の内底面に沿うようにほぼ平行に
配設された少くとも2本のリード線とからなり、このリ
ード線と上記半導体素子の上記電極端とが電気的に接続
するように配設され、上記結露膜と対向するケースの底
面部に上記結露膜とほぼ相似形の透孔が穿設されるとと
もに、上記ケースの開口部側から熱硬化性樹脂材を注入
することにより上記半導体素子が埋設されてなることを
特徴とする半導体結露センサ。
A semiconductor element consisting of an electrode deposited approximately at the center of a silicon substrate, electrode terminals disposed approximately on the same line on both sides of this electrode, and a dew condensation film coated on the electrode, a cup-shaped resin case, and It consists of at least two lead wires that penetrate the side wall surface on the bottom side of the case and are arranged substantially parallel to each other along the inner bottom surface of the internal space of the case. A through hole having a similar shape to the condensation film is formed in the bottom of the case facing the dew condensation film, and heat is removed from the opening side of the case. A semiconductor dew condensation sensor characterized in that the semiconductor element is embedded by injecting a curable resin material.
JP23040486A 1986-09-29 1986-09-29 Semiconductor dew sensor Pending JPS6383655A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23040486A JPS6383655A (en) 1986-09-29 1986-09-29 Semiconductor dew sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23040486A JPS6383655A (en) 1986-09-29 1986-09-29 Semiconductor dew sensor

Publications (1)

Publication Number Publication Date
JPS6383655A true JPS6383655A (en) 1988-04-14

Family

ID=16907350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23040486A Pending JPS6383655A (en) 1986-09-29 1986-09-29 Semiconductor dew sensor

Country Status (1)

Country Link
JP (1) JPS6383655A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998027411A1 (en) * 1996-12-17 1998-06-25 Laboratorium Für Physikalische Elektronik Institut Für Quantenelektronik Method for applying a microsystem or a converter on a substrate, and device manufactured accordingly

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998027411A1 (en) * 1996-12-17 1998-06-25 Laboratorium Für Physikalische Elektronik Institut Für Quantenelektronik Method for applying a microsystem or a converter on a substrate, and device manufactured accordingly

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