JPS6380523A - Microwave plasma processing equipment - Google Patents

Abstract

(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to semiconductor process technology 2, surface treatment technology, etc., and is directed to microwave plasma processing for thin film processing such as film deposition and etching using plasma generated by microwaves. In particular, the present invention provides an apparatus that realizes high-speed thin film processing using high-density plasma.

2. Description of the Related Art A conventional microwave plasma processing apparatus is, for example, disclosed in Japanese Patent Application Laid-open No. 5
As shown in Japanese Patent No. 8-125820, it had a structure as shown in FIG.

That is, the microwave 1 is introduced from the waveguide 2 into the cylindrical waveguide 3 via the tapered waveguide 4. At this time, a quartz plate 5 is provided to maintain a vacuum and allow microwaves to be introduced without loss. A cobalt samarium (Sm-Co) magnet 6 placed outside the cylindrical waveguide 3 is placed in the vacuum chamber 7 to generate a microwave with a frequency of 2.45 GH2.
A magnetic field of 75 Gauss exists, and when a silane (S 1H4) gas, for example, is introduced through the gas inlet 8, an ECR discharge occurs. If the photosensitive drum 11 is provided on a support base 10 into which rotation is introduced from the rotating means 9, a-3i can be deposited on the photosensitive drum 11, for example.

Problems to be Solved by the Invention However, with such a structure, the photosensitive drum stand 12
becomes an obstacle to the microwaves, and the number of reflected waves increases, so the microwave power is not efficiently absorbed by the plasma. Furthermore, since the magnetic field generated by the magnet 6 can only satisfy the ECR conditions around the cylindrical waveguide 3, if the photosensitive drum stand 12 is made to a size that reduces reflected waves, the plasma diffusion area will be large and the υ height will be increased. It was not possible to generate dense plasma near the photosensitive drum 11.

Means for solving the problems and technical means of the present invention for solving the above problems are as follows:
A cylindrical antenna is used to introduce microwaves into the plasma generation chamber, and a permanent magnet is used from inside the cylindrical body for holding the sample to generate a magnetic field inside the cylindrical antenna that satisfies the ECR conditions.

For production The effect of this technical means is as follows.

In other words, the microwave power radiated by the cylindrical antenna is independent of the shape of the cylinder used to hold the sample.
Generate the electric field necessary to generate plasma inside the cylindrical antenna. Still, a strong magnetic field can be generated on the sample surface by the magnetic field applying means provided inside the sample holding cylinder, and if this magnetic field satisfies the ECR conditions, ECR discharge will occur.

Embodiment Hereinafter, one embodiment of the present invention will be described based on the accompanying drawings.

In FIGS. 1 and 2, 21 is a vacuum chamber, which has a gas inlet 22 and a microwave inlet 23. In FIG.

A slotted line type helical coil, commonly known as a rigid coil 24, which is a microwave radiation antenna, is provided in the vacuum chamber 21.

A non-magnetic cylinder 25 is fixed inside the rigid coil 24, and a plurality of rod-shaped magnets 26 (for example, cobalt samarium-based permanent magnets) are attached to the inner circumference of the cylinder 25. The magnetic poles facing the wall surface of the cylindrical body 25 are arranged along the circumferential direction so that the magnetic poles facing the wall surface of the cylindrical body 25 alternately become N poles and S poles, and generate lines of magnetic force 27 between the rigid coil 24 and the cylindrical body 25. In addition, the magnetic pole facing the wall surface of the cylinder 25 and the magnetic pole on the opposite side are an annular yoke 2 made of a magnetic material.
When exposed to the sun, it forms a magnetic circuit. A cooling pipe 29 is attached to the cylindrical body 25 so that the magnet body 26 can be cooled.

In such a structure, a gas to be ionized, such as argon, is introduced through the gas inlet 22.

For example, if the microwave is a magnetron 3o with a frequency of 2.45 GH2, an average output of 300 Watts passes through the waveguide 31, passes through the microwave inlet 23, and is guided to the rigid coil 24. At this time, the density of the leakage magnetic flux of the magnet body 26 is set to reach electron cyclotron resonance on the rigidano coil 24 (for example, 2, 45 G
875 Gauss for a frequency of Hz), a high-density plasma is generated between the rigid coil 24 and the cylinder 25 (Reference: R9De Dionigi, M.
Fontahesi, E., 5indoni and G.
, Li5itano; Applied Physics
Letters, Vol.

19, (1971), P, 19). When the sample 32 is attached to the outer periphery of the cylinder 25, silane (S
1H4) When a gas is introduced, a-3i can be generated on the sample 32. Further, for example, if a negative voltage is applied to the cylindrical body 25 with respect to the rigid coil 24, it can be used as an ion etching device.

In the second embodiment, the rigid coil 24 is of a helical type with helical cuts, but the same effect can be obtained even if it is of a digital type with cuts perpendicular to the axis. Moreover, although 31 is a waveguide, the same effect can be obtained even if it is a coaxial line.

Effects of the Invention The present invention uses a rigid coil as a power supply means for plasma generation, and applies a magnetic field to satisfy ECR conditions from inside a cylindrical sample stage using a permanent magnet, thereby increasing the plasma density to 10 particles/ We were able to obtain high-density ad plasma near the sample.

[Brief explanation of the drawing]

FIG. 1 is a longitudinal sectional view of a microwave plasma processing apparatus according to an embodiment of the present invention, FIG. 2 is a sectional view taken along line A-A of the same apparatus, and FIG.
The figure is a longitudinal sectional view of a conventional microwave plasma processing apparatus. 21...Vacuum chamber, 22...Gas inlet, 23...Microwave inlet, 24...
・Rigidano coil (cylindrical antenna), 25...
- Cylindrical body, 26... Magnet body (magnetic field applying means), 3
2... Sample. Name of agent: Patent attorney Toshio Nakao and 1 other person21
・-Vacuum chamber 2 and Ichino's dedicated to ℃ 25-11 茄滲2C-'o'+Q Ishiimoto Ci benefit Tfull sword Rona ni no 3
2---Charge fee Figure 2 Figure 3

Claims (5)

[Claims] (1) A vacuum chamber having a gas inlet and a microwave inlet, a cylindrical antenna connected to the microwave inlet for radiating microwaves into the vacuum chamber, and a sample provided in the cylindrical antenna. A cylindrical body for holding the antenna, and a magnetic field applying means for applying a magnetic field between the cylindrical antenna and the cylindrical body. A microwave plasma processing device consisting of multiple magnet bodies with different adjacent magnetic poles. (2) The microwave plasma processing apparatus according to claim 1, which uses a slotted line type helical coil (rigidano coil) as the cylindrical antenna. (3) The microwave plasma processing apparatus according to claim 1, wherein the magnetic field causes electron cyclotron resonance with respect to the frequency of the microwave. (4) The microwave plasma processing apparatus according to claim 1, wherein the magnet body is a cobalt samarium-based rare earth magnet. (5) The microwave plasma processing apparatus according to claim 1, wherein the cylindrical body is provided with a cooling means.