JPS63238289A - Method and device for working by using simultaneously plasma and laser irradiation - Google Patents
Method and device for working by using simultaneously plasma and laser irradiationInfo
- Publication number
- JPS63238289A JPS63238289A JP62073294A JP7329487A JPS63238289A JP S63238289 A JPS63238289 A JP S63238289A JP 62073294 A JP62073294 A JP 62073294A JP 7329487 A JP7329487 A JP 7329487A JP S63238289 A JPS63238289 A JP S63238289A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- laser
- plasma
- reaction chamber
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 8
- 230000001678 irradiating effect Effects 0.000 claims abstract description 8
- 238000003672 processing method Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 18
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【発明の詳細な説明】
技術分野
本発明は、セラミックスおよび金属などの被加工物を高
速度で微細にエツチング（切削）またはデボフシ１ン（
積ＮＩ）するための新規な加工方法および装置に関する
。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention is a method for finely etching (cutting) or debossing workpieces such as ceramics and metals at high speed.
The present invention relates to a novel processing method and apparatus for producing product (NI).
背景技術
典型的な先行技術は、プラズマを用いて被加工物表面を
エツチングする技術である。このプラズマエツチング技
術は、高精度加工を期待することができるけれども、加
工速度が遅い、微細加工用マスクが必要であるという問
題がある。また従来のレーザー加工においては、従来、
熱による変質やクラック発生などの開運があり、反応性
ガス中におけるレーザー加工、すなわち熱化学反応を用
いたレーザー誘起エツチングにおいても、材料がレーザ
ーの波長に対し、透過率や反射率の高いものでは反応が
遅い、あるいは全く反応が起こらないなどの限界があっ
た。BACKGROUND ART A typical prior art technique uses plasma to etch the surface of a workpiece. Although this plasma etching technique can be expected to provide high-precision processing, there are problems in that the processing speed is slow and a mask for fine processing is required. In addition, in conventional laser processing,
There are problems such as deterioration and cracking due to heat, and even in laser processing in a reactive gas, that is, laser-induced etching using a thermochemical reaction, the material has a high transmittance or reflectance at the laser wavelength. There were limitations such as slow reaction or no reaction at all.
発明が解決すべき間定点
本発明の目的は、高精度および高速度で加工を↑テなう
ことができるとともに、熱による変質やクツツク発生な
どの問題が生じないようにした改良された加工方法およ
び加工装置を提供することである。An object of the present invention is to provide an improved machining method that enables machining to be performed with high precision and high speed, and that does not cause problems such as deterioration due to heat and occurrence of cracks. and processing equipment.
開運点を解決するための手段
本発明は、プラズマ中に設けた被加工物表面に、レーザ
ー光を照射し、被加工物表面のレーザー光照射部分を選
択的に増速エツチングまたは増速デボノシランすること
を特徴とするプラズマとレーザー照射とを同時に用いる
加工方法である。゛まだ本発明は、被゛加工物が収納さ
れ、被加工物の被加工表面に対向する部分が透光性とな
っている反応室と、
反応室内にプラズマを形成する手段と、レーザー光を反
応室の透光性部分を介して被加工表面に集光照射すると
ともに、レーザー光照射部分を拡大して見るためのレー
ザー光照射・ｍ察手段と、
叉応室およびレーザー光照射・Ｉｌ察手段を相対的に移
動させる手段とを含むことを特徴とするプラズマとレー
ザー照射とを同時に用いる加工装置である。Means for Solving the Unlucky Point The present invention irradiates the surface of a workpiece placed in plasma with a laser beam, and selectively performs accelerated etching or accelerated debonosilane on the portion of the workpiece surface irradiated with the laser beam. This processing method uses plasma and laser irradiation simultaneously. Still, the present invention comprises: a reaction chamber in which a workpiece is housed and a portion facing the surface of the workpiece is translucent; a means for forming plasma in the reaction chamber; and a means for generating a laser beam. A laser beam irradiation/mensor means for irradiating the surface to be processed with focused light through the light-transmitting part of the reaction chamber and magnifying the area irradiated with the laser beam, and a reaction chamber and a laser beam irradiating/inspection means. The present invention is a processing device that simultaneously uses plasma and laser irradiation, and is characterized by including a means for relatively moving the means.
作 用
本発明に従えば、低速であってもプラズマエツチングが
可能な材料は、その材料が充分な吸収率を持つ波長Ｍ域
のレーザービームを集光照射することによって局部的温
度上昇を起こし、反応をより高速化することができ、こ
の反応速度の大きな差異により、レーザー光と被加工物
を相対的に走査させることで、マスクレスの微細パター
ン加工が可能となる。Function According to the present invention, a material that can be plasma etched even at a low speed causes a local temperature rise by irradiating the material with a focused laser beam in the wavelength M range for which the material has sufficient absorption rate. The reaction can be made faster, and this large difference in reaction speed enables maskless fine pattern processing by scanning the laser beam and the workpiece relative to each other.
また被加工物材料のレーザー光の吸収率が低い場合でも
、表面付近のプラズマによる活性種がレーザー光を吸収
する場合、光化学反応により反応性がより高くなるため
、エツチングやデボノション反応はより高速化でとる。In addition, even if the absorption rate of the laser beam of the workpiece material is low, if the active species generated by the plasma near the surface absorb the laser beam, the reactivity will be higher due to photochemical reaction, so the etching and debomination reactions will be faster. Take it.
さら（こプラズマエツチングがほとんどできない材料の
場合においても、プラズマ活性種の表面へのデポジシａ
ンが生じる場合があり、この場合、材料がレーザー光の
吸収率の低いものであっても、デボシシａンされた物質
が吸収率の高いものであれば、レーザー照射部分に温度
上昇を生じさせ、熱化学反応によって被加工物である基
板材料をもエツチングすることが可能となる。また上記
デボフシ９ンが上記熱化学反応よりも充分高速に起こる
ようにできるので、エツチングは連続的に高速に行なう
ことがで訃る。Furthermore, even in the case of materials for which plasma etching is almost impossible, the deposition of plasma active species on the surface
In this case, even if the material has a low absorption rate for laser light, if the debossed material has a high absorption rate, it will cause a temperature rise in the laser irradiated area. It becomes possible to also etch the substrate material, which is the workpiece, by a thermochemical reaction. Furthermore, since the debossing process can be caused to occur much faster than the thermochemical reaction, etching can be carried out continuously at high speed.
プラズマは、エレクトロン・サイクロトロン・レゾナン
ス（略称ＥＣＲ）形プラズマであってもよい。The plasma may be an electron cyclotron resonance (ECR) type plasma.
実施例
図面は、本発明の一実施例の断面図である。図面の紙面
に垂直なＸＹ平面上で、反応室１を移動するためのＸＹ
テーブル２が設けられる０反応室１内には、保持台３上
に被加工物４が乗載されて固定される。反応室１には、
蓋５が設けられる。The embodiment drawings are cross-sectional views of one embodiment of the present invention. XY for moving reaction chamber 1 on the XY plane perpendicular to the paper surface of the drawing
In a reaction chamber 1 in which a table 2 is provided, a workpiece 4 is placed on a holding table 3 and fixed thereon. In reaction chamber 1,
A lid 5 is provided.
反応室１と、それを閉じるための蓋５とは、透光性材料
たとえば石英がラスなどから成る０反応室１には、一対
の電極６，７が設けられ、これらの電極６．７には、整
合回路を含む高周波電源８が接続される０反応室１の内
部空間９には、管路１０からがスが供給され、管路１１
からガスが排出される。被加工物４を保持するための保
持台３は、冷却されたステンレス鋼などから成る。蓋５
の上方には、レーザー光照射・観察手段１２が設けられ
る。The reaction chamber 1 and the lid 5 for closing it are made of a translucent material such as quartz lath.The reaction chamber 1 is provided with a pair of electrodes 6, 7, Gas is supplied from a conduit 10 to an internal space 9 of the reaction chamber 1 to which a high frequency power source 8 including a matching circuit is connected, and a conduit 11
Gas is emitted from the The holding table 3 for holding the workpiece 4 is made of cooled stainless steel or the like. Lid 5
A laser beam irradiation/observation means 12 is provided above.
このレーザー光照射・ｍｖＸ手段１２は、本体１３の側
部に設けられたレーザー光源１４と、被加工物４の被加
工表面４ａを照射するための照明用ランプ１５とを含み
、対物レンズ１６と接眼レンズ１７などとによって光学
顕微＠ｉａが構成される。この顕微鏡１８によって被加
工物４の被加工表面４ａを拡大して１！察することがで
きる。レーザー光［１４からのレーザー光は、グイクロ
イックミラー１９を介して対物レンズ１Ｇで集光され、
Ｍ５を経て被加工表面４ａに照射される。照明用ランプ
１５からの可視光は、ハーフミラ−２０カーらグイクロ
イックミラー１９、対物レンズ１６および益５を経て被
加工表面４ａに照射される。この被加工表面４ａの像は
、対物レンズ１６、グイクロイ・ンクミラー１９、ノ）
−７ミラー２０および反射ｖｔ２１を介して接眼レンズ
１７から目視または計測することができる。被加工表面
４ａと対物レンズ１６との間隔は、たとえば、せ−１ぜ
一５２ｃｍ程度であり、微細なレーザー光を被加工表面
４ａに照射し、その加工状態を前述の顕微ｖｔ１８によ
って常時観測・測定がでさる。ＸＹテーブル２はまた、
反応室１を図面の上下に変位調整して、レーザー光源１
４からのレーザー光お上り顕微鏡１８の焦点を調整する
ことができるように構成してもよい。あるいは、レーザ
ー光照射・観察手段１２を上下に変位調整してもよい。This laser light irradiation/mvX means 12 includes a laser light source 14 provided on the side of the main body 13, an illumination lamp 15 for irradiating the surface 4a of the workpiece 4, and an objective lens 16. The eyepiece lens 17 and the like constitute an optical microscope @ia. This microscope 18 magnifies the workpiece surface 4a of the workpiece 4 and shows 1! can be understood. The laser beam from the laser beam [14 is focused by the objective lens 1G via the gicroic mirror 19,
The light is irradiated onto the surface 4a to be processed through M5. Visible light from the illumination lamp 15 passes through the half mirror 20, the microchroic mirror 19, the objective lens 16, and the mirror 5, and is irradiated onto the surface to be processed 4a. The image of this surface to be processed 4a is captured by the objective lens 16, the mirror 19, and
It can be visually observed or measured from the eyepiece lens 17 via the −7 mirror 20 and the reflection vt21. The distance between the surface to be processed 4a and the objective lens 16 is, for example, approximately 52 cm, and a minute laser beam is irradiated onto the surface to be processed 4a, and the processed state is constantly observed and observed using the above-mentioned microscope VT18. Measurement is possible. XY table 2 also has
Adjust the displacement of the reaction chamber 1 up and down in the drawing, and install the laser light source 1.
The focus of the microscope 18 may be configured such that the focus of the laser beam emitted from the microscope 18 can be adjusted. Alternatively, the laser beam irradiation/observation means 12 may be vertically displaced.
目視を行なうために、撮像手段を用いて、陰極線管に表
示するようにしてもよい。For visual viewing, an imaging means may be used to display the image on a cathode ray tube.
レーザー光源１４からのレーザー光を反応室１内に導く
ことによって、レーザー誘起化学効果が達成されるとと
もに、その場観測をしつつ、たとえばサブミクロンオー
グのマスクレス加工を行なうことができる。By guiding the laser light from the laser light source 14 into the reaction chamber 1, a laser-induced chemical effect is achieved, and maskless processing of, for example, submicron ogres can be performed while performing in-situ observation.
レーザー光ａ１４からのレーザー光としては、Ａ ｒ＋
イオンレーザ−１Ｋｒ”イオンレーザ−、エキシマレー
ザ−１ＹＡＧレーザーなどを用いることがでさる。The laser beam from the laser beam a14 is A r+
An ion laser (1Kr" ion laser), an excimer laser (1YAG laser), etc. can be used.
反応室１内に管路１０から供給するプラズマのガス種と
して、ＣＰ、、ＣＣ１，、ＣＦ、、ＣＣβ２Ｆ２、ＢＣ
ｌ２、ＮＦ３等のハロゲンおよびハロゲン系ガスを１１
を独で用いるか、これらのガスとＡｒ５０２、Ｎ２、Ｎ
２等のがスを混合して用いる。被加工表面４ａに金属膜
を形成する際には、管路１０からのガスは有機金ＩＡｌ
ｆスが用いられる。The gas species of plasma supplied from the pipe line 10 into the reaction chamber 1 are CP, CC1, CF, CCβ2F2, BC.
Halogens and halogen-based gases such as l2, NF3, etc.
alone or with these gases Ar502, N2, N
Use a mixture of second grade gas. When forming a metal film on the surface 4a to be processed, the gas from the pipe 10 is an organic gold IAl
f-s is used.
被加工物４としては、７エライト、アルミナ、Ｌ！Ｎｌ
＋Ｏｚ 、ＰＬＺＴ１ＰＺＴｈＩ？、セ２ミ、２クスお
よび各！！ｌＩ金属や７モル７７スを含む各種合金を選
択することができる。Workpiece 4 is 7elite, alumina, L! Nl
+Oz, PLZT1PZThI? , Se2mi, 2kus and each! ! Various alloys can be selected including lI metals and 7 mole 77 metals.
効 果
以上のように本発明によれば、上２ミックスおよび金属
などのエツチングおよびデポノヨンなどの加工を、高速
度で、しかもサブミクロンオーグで微細に、高精度で行
なうことができるようになり、プラズマ技術あるいはレ
ーザー誘起加工技術のみでは不可能であった高速度の加
工やレーザー光の吸収率の低い材料の微細加工をマスク
レスで行なうことができるようになる。Effects As described above, according to the present invention, it is now possible to perform etching and depoting of upper 2 mixes and metals at high speed, finely with submicron og, and with high precision. It will now be possible to perform maskless high-speed processing and micro-processing of materials with low absorption of laser light, which was not possible using plasma technology or laser-induced processing technology alone.
図面は、本発明の一実施例の断面図である。 The drawing is a cross-sectional view of one embodiment of the invention.
Claims (2)
を照射し、被加工物表面のレーザー光照射部分を選択的
にエッチングまたはデポジションすることを特徴とする
プラズマとレーザー照射とを同時に用いる加工方法。(1) Simultaneous plasma and laser irradiation characterized by irradiating laser light onto the surface of a workpiece placed in plasma and selectively etching or depositing the portion of the workpiece surface irradiated with laser light. Processing method used.
向する部分が透光性となっている反応室と、反応室内に
プラズマを形成する手段と、 レーザー光を反応室の透光性部分を介して被加工表面に
集光照射するとともに、レーザー光照射部分を拡大して
見るためのレーザー光照射・観察手段と、 反応室およびレーザー光照射・観察手段を相対的に移動
させる手段とを含むことを特徴とするプラズマとレーザ
ー照射とを同時に用いる加工装置。(2) A reaction chamber in which a workpiece is housed and a portion facing the surface of the workpiece is translucent, a means for forming plasma in the reaction chamber, and a means for transmitting a laser beam through the reaction chamber. A laser beam irradiation/observation means is used to irradiate the workpiece surface with focused light through a photosensitive part and to enlarge the laser beam irradiation area, and the reaction chamber and laser light irradiation/observation means are relatively moved. A processing device that simultaneously uses plasma and laser irradiation, characterized in that it includes means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62073294A JPS63238289A (en) | 1987-03-26 | 1987-03-26 | Method and device for working by using simultaneously plasma and laser irradiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62073294A JPS63238289A (en) | 1987-03-26 | 1987-03-26 | Method and device for working by using simultaneously plasma and laser irradiation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63238289A true JPS63238289A (en) | 1988-10-04 |
Family
ID=13513994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62073294A Pending JPS63238289A (en) | 1987-03-26 | 1987-03-26 | Method and device for working by using simultaneously plasma and laser irradiation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63238289A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11207478A (en) * | 1998-01-21 | 1999-08-03 | Rikagaku Kenkyusho | Laser processing method and laser processing device |
| WO2015179991A1 (en) * | 2014-05-30 | 2015-12-03 | Unitechnologies Sa | Apparatus for surface processing on a workpiece with an active portion and using a movable enclosure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52127765A (en) * | 1976-04-19 | 1977-10-26 | Fujitsu Ltd | Plasma etching method |
| JPS60236219A (en) * | 1984-04-25 | 1985-11-25 | テキサス インスツルメンツ インコーポレイテツド | Depositing method and device using plasma produced source gas |
-
1987
- 1987-03-26 JP JP62073294A patent/JPS63238289A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52127765A (en) * | 1976-04-19 | 1977-10-26 | Fujitsu Ltd | Plasma etching method |
| JPS60236219A (en) * | 1984-04-25 | 1985-11-25 | テキサス インスツルメンツ インコーポレイテツド | Depositing method and device using plasma produced source gas |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11207478A (en) * | 1998-01-21 | 1999-08-03 | Rikagaku Kenkyusho | Laser processing method and laser processing device |
| WO2015179991A1 (en) * | 2014-05-30 | 2015-12-03 | Unitechnologies Sa | Apparatus for surface processing on a workpiece with an active portion and using a movable enclosure |
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