JPS62232147A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent short circuits between a TAB lead and the end part of a chip, by forming a surface protecting film for a semiconductor device using a TAB system as a packaging method, by a polyimide film including SiO2 power, which is formed around a bump, at a thin thickness, and a silicon nitride film, which is formed on the other surface of the chip. CONSTITUTION:A TAB system is used as a packaging method of a semiconductor device. In this semiconductor device, a surface protecting film has the following structure: a first surface protecting film 5 in a region, which covers an area from the end part of a chip to the surrounding part of a bump 4 for connecting a TAB lead, is formed with a thickness of +0mum--10mum with respect to the height of the bump; and a second surface protecting film 6 in the other surface region of the chip is formed with a thickness of 0.5-5 mum. Namely, as the surface protecting film on the Si chip l having an insulating film 3 and the TAB-lead connecting bump 4 with the interconnection thickness of 2.20mum, the following films are provided: the polyimide film 5 including Sio2 film with the thickness of 18mum, which is formed on the region from the end part of the chip to the surrounding part of the bump 4; and the silicon nitride film 6, which is formed on the other surface of the chip. The TAB lead 7 is connected on the bump 4.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device structure, and particularly to a surface protection film structure of a semiconductor device using the TAB method as a mounting method.

[Conventional technology]

Conventionally, as this type of surface protection film structure, there is one in which a polyimide film is formed as thin as 2 to 5 μm over the entire surface of a semiconductor chip. Also, as another example.

In order to prevent contact between the TABIJ-dead and the edge of the semiconductor chip, there is one in which an auxiliary bump is formed between the bump for connection with the TABIJ-dead and the chip end.

[The problem that the invention attempts to solve]

In the case of the first example of the prior art described above, the surface protective film is thin and TAB! The disadvantage is that the J-board and the chip end come into contact, resulting in a short circuit, and the surface protection film is made of polyimide.
In the case of the second example of the prior art, it is necessary to move the auxiliary bump away from the 7° edge of the chip to a position where there is enough room for chipping and chipping that occur during dicing. %'1'
Since it is necessary to form a connection bump with the A and B leads and the end of the chip, there is a drawback that the chip area is inevitably increased.

[Flat membrane to solve problems]

The surface impregnating film structure of a semiconductor device of the present invention is a first surface protective film in a region extending from a chip end to a peripheral part of a pad for connecting a TABIJ in a semiconductor device used in an i'AB type full mounting method. +0 μm to -1 to the height of the bump
It is characterized in that it is formed with a thickness of 0 μm, and the second surface protective film t-0 on the other chip surface area is formed with a thickness of 5 to 5 μm.

〔Example〕

Next, the present invention will be explained with reference to all the drawings.

FIG. 1 is a longitudinal sectional view of an embodiment of the present invention.

In the embodiment, insulating film 3. Wiring 2, 20μm thick 'l'A
As a surface protection film on the Si chip 1, which has all the bumps 4 for H lead connection, 18 μm thick 5i (polyimide film 5 containing J2 powder and other chip surface areas) is formed in the area from the chip end to the area around the pan 14. It has a silicon nitride film 6 formed thereon.

Figure 2 shows 1' A B lead 7 on bump 4 in Figure 1.
Shows the state in which it is connected.

〔Effect of the invention〕

As explained above, the present invention provides a surface protective film for a semiconductor device that uses the TAB method as a mounting method, with a thickness of 2.
By forming a polyimide film containing 5i02 powder with a thickness of μm thin around 271 and a silicon nitride film formed on the other chip surfaces, 5i (
The J2-containing polyimide film can protect the TAB leads and the sheet metal at the end of the chip, and the silicon nitride film on the other chip surfaces has the effect of protecting the internal circuitry of the chip with good moisture resistance.

[Brief explanation of drawings]

FIG. 1 is a longitudinal cross-sectional view of one embodiment of the present invention, and FIG. 2 is a cross-sectional view in which '1' ABIJ-do is connected. 1...Si chip, 2...wiring, 3.
...IP! Edge film, 4... TAB bonding bump, 5...5i02 powdered polyimide film,
6...Clicon nitride film, 7...TAB
IJ-do.

Claims (3)

[Claims] (1) In a semiconductor device using the TAB method as a mounting method, the first surface protection film is formed in a region covering the periphery of the bump for TAB lead connection from the chip end to a thickness of +0 μm to −10 μm relative to the height of the bump. A semiconductor device characterized in that a second surface protection film is formed on other chip surface regions to have a thickness of 0.5 to 5 μm. (2) Claim No. 1, wherein the first surface protective film is a polyimide film containing inorganic powder or a polyimide film, and the second surface protective film is a silicon nitride film or a SiO_2 film.
1. Semiconductor device described in Section 1. (3) The semiconductor device according to claim (1), wherein the first surface protective film is a polyimide film containing inorganic powder, and the second surface protective film is a polyimide film.