JPS61236144A - Resin-molded semiconductor device - Google Patents
Resin-molded semiconductor deviceInfo
- Publication number
- JPS61236144A JPS61236144A JP60076543A JP7654385A JPS61236144A JP S61236144 A JPS61236144 A JP S61236144A JP 60076543 A JP60076543 A JP 60076543A JP 7654385 A JP7654385 A JP 7654385A JP S61236144 A JPS61236144 A JP S61236144A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead
- lead frame
- wire
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明はレジンモールド型半導体装置に関し、特許、レ
ジンモールド後に、リードフレームのリードを折曲げす
るタイプの半導体装置における、当該折曲げに伴う耐湿
性の劣化を防止する技術に関する。[Detailed Description of the Invention] [Technical Field] The present invention relates to a resin molded semiconductor device, and the present invention relates to a patent for a semiconductor device in which the leads of a lead frame are bent after resin molding, and the moisture resistance deteriorates due to the bending. Regarding technology to prevent this.
リードフレームを用いたレジンモールド型半導体装置は
、例えば、次のようにして得ることができる。すなわち
、リードフレームに半導体素子をマウントし、ワイヤボ
ンディングした後、モール、ト°金型に入れてレジンで
トランスファモールドし１、′
モールド後にリードフレームの封止体（モールド部）外
部のり−ドを折曲げする主要工程を経て得ることができ
る。A resin molded semiconductor device using a lead frame can be obtained, for example, as follows. That is, after mounting a semiconductor element on a lead frame and wire bonding, it is placed in a mold and transfer molded with resin. It can be obtained through the main process of bending.
周知のように、レジンモールド型半導体装置は、低価格
に封止を行なうことができる利点がある一方で、その耐
湿性が他のガラス封止などの封止構造に比して劣る欠点
がある。As is well known, resin molded semiconductor devices have the advantage of being able to be encapsulated at low cost, but have the disadvantage that their moisture resistance is inferior to other encapsulation structures such as glass encapsulation. .
これは封止体（モールド部）が透水・吸湿の性質ｖ有し
ていることから、このバルク１通じて水分が浸入し易い
こと、モールド部を形作るレジンと一般に金属より成る
リードフレームとの熱膨張係数率の違いから、モールド
時の両者の収縮の差によってその界面に剪断力が働き、
この結果、界面に隙間が生じて水分が浸入し易くなるこ
とにある。This is because the sealing body (mold part) has water-permeable and moisture-absorbing properties, so moisture easily enters through the bulk 1, and the heat generated between the resin that forms the mold part and the lead frame, which is generally made of metal. Due to the difference in expansion coefficient, shearing force acts on the interface due to the difference in shrinkage between the two during molding.
As a result, gaps are created at the interface, making it easy for moisture to enter.
上記のごときリードの曲げ加工工程を経るレジンモール
ド型半導体装置にあっては、リード折曲生じ易く、耐湿
性がより一層問題とされる。In a resin molded semiconductor device that undergoes the lead bending process as described above, the leads are likely to be bent, making moisture resistance more problematic.
ここで、リードのワイヤボンディング部を他のリード部
分よりも大面積とし、当該ワイヤボンディング部と他の
リード部と’ＹＴ型に構成したものがある。この構成に
従うと、Ｔ型の頭部とレジンとの間にひっかかりが設け
られ、上記リードの引抜けや耐湿性の向上などが期待で
きる。Here, there is a device in which the wire bonding portion of the lead has a larger area than other lead portions, and the wire bonding portion and other lead portions are configured in a 'YT type. According to this configuration, a hook is provided between the T-shaped head and the resin, and it is expected that the lead can be pulled out and moisture resistance will be improved.
しかし、従来のリードフレームは上記のとときＴｆｆｉ
の頭部（ワイヤボンディング部）以外の部分は［Ｍ状に
一定の喝で形成されているので、大きな引張力がリード
に働いた場合、その頭部に力が集中すること忙なり、リ
ードを折曲げする製品における耐湿性の向上は充分なも
のとはいえない。However, when the conventional lead frame
The parts other than the head (wire bonding part) are formed with a certain M-shape, so if a large tensile force is applied to the lead, the force will be concentrated on the head, causing the lead to The improvement in moisture resistance of products that are folded cannot be said to be sufficient.
同レジンモールド型半導体装置及びそれに使用されるリ
ードフレーム九つい℃詳しく述べた文献の例として、工
業調査会発行「ＩＣ化実装技術」１９８０年１月１５日
発行、Ｐ１３５〜１５３がある。An example of a document that describes the resin molded semiconductor device and the lead frame used therein in detail is "IC Mounting Technology" published by Kogyo Kenkyukai, January 15, 1980, pp. 135-153.
本発明の目的は、リードを曲げ加工して成るレジンモー
ルド型半導体装置において、リード折曲けに伴う耐湿性
の劣化を防止する技術を提供することＫある。An object of the present invention is to provide a technique for preventing moisture resistance from deteriorating due to lead bending in a resin molded semiconductor device formed by bending leads.
°本発明の前記ならびにそのほかの目的と新規な特徴は
、本明細書の記述および添付図面からあきらかになるで
あろう。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、下記のとおりである０
すなわち、本発明では、リードフレームの、モールド後
にレジンに埋込まれる部分をテーパー状に構成したので
、耐引張力が増大し、レジンとジ−１’フレームとの剥
離が従来のリードフレームに比して減少され、耐湿性の
向上したレジンモールド型半導体装置を得ることができ
る。A brief overview of typical inventions disclosed in this application is as follows.0 That is, in the present invention, the portion of the lead frame that is embedded in the resin after molding is formed into a tapered shape. Therefore, it is possible to obtain a resin-molded semiconductor device with increased tensile strength, reduced peeling between the resin and the G-1' frame compared to conventional lead frames, and improved moisture resistance.
久に、本発明を実施例を示す図面尤基づいて説明する。 The present invention will now be described with reference to drawings showing embodiments.
第１図は本発明を適用したり−ト°フレームの要部平面
図、第２図は本発明の実施例を示すリードフレームの平
面図、第３図は本発明によるレジンモールド型半導体装
置の一例を示す断面図である。FIG. 1 is a plan view of main parts of a lead frame to which the present invention is applied, FIG. 2 is a plan view of a lead frame showing an embodiment of the present invention, and FIG. 3 is a plan view of a resin mold type semiconductor device according to the present invention. It is a sectional view showing an example.
本発明によるリードフレームの一例は、第２図に示すよ
うに、その中央部に半導体素子（チップ）をマウント（
固着）するタブ１と、該タブ１を支持し℃いるタブ吊り
リード２と、タブ１に向かつ℃延びる複数のリード３と
、これらリード３とタブ吊りリード２の外端をつなぐ外
枠４と、それぞれのリード３を固定したり、レジンモー
ルド時のレジンの流出を防ぐダム５とを備えて成る。As shown in FIG. 2, an example of a lead frame according to the present invention has a semiconductor element (chip) mounted in the center thereof.
A tab 1 to be fixed (fixed), a tab suspension lead 2 supporting the tab 1, a plurality of leads 3 extending toward the tab 1, and an outer frame 4 connecting these leads 3 and the outer ends of the tab suspension leads 2. and a dam 5 for fixing each lead 3 and preventing resin from flowing out during resin molding.
当該リード３は、第１図および第２図に示すように、ダ
ム５とタブ１との間がＴを形状に構成されており、Ｔ型
形状に構成されたリード３のＴ型頭部６には、これら図
には示されていないが、タブ１上にマウントサれた半導
体素子のパッドとの間を接続するコネクタワイヤの他端
部が熱圧着ボンディング法などの周知のワイヤボンディ
ング法により、ボンディングされろ。As shown in FIGS. 1 and 2, the lead 3 has a T-shape between the dam 5 and the tab 1, and the T-shaped head 6 of the lead 3 has a T-shape. Although not shown in these figures, the other end of the connector wire connecting between the pads of the semiconductor element mounted on the tab 1 is bonded by a well-known wire bonding method such as a thermocompression bonding method. Get bonded.
この頭部（以下ワイヤボンディング部という）６とダム
５との間のリード部分７は、これら図に示すように、ダ
ム５＠から当該ワイヤボンディング部６にかけて次第に
末広がり状（以下テーパー状という）に構成されている
。従来は第１図点線で示すように、当該リード部分（テ
ーパ一部）７は幅が同じであった。As shown in these figures, the lead portion 7 between the head (hereinafter referred to as wire bonding part) 6 and the dam 5 gradually widens toward the end (hereinafter referred to as tapered shape) from the dam 5 @ to the wire bonding part 6. It is configured. Conventionally, as shown by the dotted line in FIG. 1, the lead portion (tapered portion) 7 had the same width.
本発明リードフレームを用いたレジン封止型半導体装置
の製法の一例は次の通りである◎すなわち、タブ１上に
半導体素子タダイホンディングし、該素子のパッド電極
とリードフレームのワイヤボンディング部６に設けられ
たパッドとをコネクタワイヤによりワイヤボンディング
した後に、当該組立品をモールド金型に入れ、レジンＺ
第１図点線８で示すところまで、トランスファーモール
ド後、ダム５を適宜切断除去し、封止部（モールド部）
外に突出したり−ド３を折曲げする主要工程を経て得る
ことができる。An example of a method for manufacturing a resin-sealed semiconductor device using the lead frame of the present invention is as follows: ◎ That is, a semiconductor element is die-bonded on the tab 1, and the pad electrode of the element is bonded to the wire bonding part 6 of the lead frame. After wire-bonding the pads provided on the
After transfer molding, the dam 5 is appropriately cut and removed to the point indicated by the dotted line 8 in FIG.
It can be obtained through the main steps of protruding outward and bending the door 3.
第３図はかくて得たれたＤＩＬ（デュアル・イン・ライ
ン）タイプのレジンモールド型半導体装置の一例を示し
、第３図にて、９は半導体素子、１０はコネクタワイヤ
、１１は封止部を示す。FIG. 3 shows an example of the thus obtained DIL (dual in line) type resin molded semiconductor device. In FIG. 3, 9 is a semiconductor element, 10 is a connector wire, and 11 is a sealing part. shows.
本発明に使用されるリードフレームは、例りば金属によ
り構成され、具体例として４２アロイ（４２Ｎｉ−Ｆｅ
）があげらレル。The lead frame used in the present invention is made of metal, for example, and a specific example is 42 alloy (42Ni-Fe).
) Gaagerareru.
半導体素子９は、例えばシリコン単結晶基板から成り、
周知の技術によってこのチップ内には多数の回路素子が
形成され、１つの回路機能が与えられている。回路素子
の具体例は、例えばＭＯＳトランジスタから成り、これ
らの回路素子によって例えばメモリや論理回路の回路機
能が形成されている。The semiconductor element 9 is made of, for example, a silicon single crystal substrate,
A large number of circuit elements are formed within this chip using well-known techniques to provide a single circuit function. A specific example of the circuit element is, for example, a MOS transistor, and these circuit elements form a circuit function such as a memory or a logic circuit.
コネクタワイヤ１０は、例えば金（Ａｕ）線により構成
される。The connector wire 10 is made of, for example, a gold (Au) wire.
封止体１１を構成するレジンには、例えばエポキシ樹脂
やシリコーン系樹脂が例示される。Examples of the resin constituting the sealing body 11 include epoxy resin and silicone resin.
従来のリードフレームでは、第１図点線で示したようＩ
Ｃ，ｌ−ド部分７０幅は一定となっているので、リード
３を折曲げする際に大きな引張力が働いた場合、ワイヤ
ボンディング部６に力が集中することになる。In conventional lead frames, I
Since the width of the C and L lead portions 70 is constant, if a large tensile force is applied when bending the leads 3, the force will be concentrated on the wire bonding portions 6.
これに対し、本発明によれば、リードに大なる外力が働
℃・た場合においても、リード部分７がテーパー状に構
成され、ワイヤボンディング部６および当該リード部分
７がレジンと幾何学的にから入合い、これら両者で同時
に引張力を緩和することができるので、リード引抜きに
耐する抵抗が大となるばかりでなく、リードフレームと
レジンとの剥離が少なくなり、半導体素子への水分の浸
入が低減され、耐湿性の向上したレジンモールド型半導
体装置を得ることができた。In contrast, according to the present invention, even when a large external force is applied to the lead, the lead portion 7 is configured in a tapered shape, and the wire bonding portion 6 and the lead portion 7 are geometrically connected to the resin. Since the tensile force can be relaxed by both of them at the same time, it not only increases the resistance to lead pullout, but also reduces peeling between the lead frame and the resin, preventing moisture from entering the semiconductor element. It was possible to obtain a resin-molded semiconductor device with reduced moisture resistance and improved moisture resistance.
以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しな〜・範囲で種々変更
可能であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on examples, the present invention is not limited to the above examples, and can be modified in various ways without departing from the gist thereof. Needless to say.
例えば、前記実施例ではリード部分全体タテ−パー状と
した例を示したが、部分的であり又もよく、例えば、ダ
ム近傍を従来と同様に幅一定とし、その延設された部分
を上記実施例と同様にテーパー状としてもよい。For example, in the above embodiment, the entire lead portion is tapered, but it may be partially tapered. For example, the width near the dam may be constant as in the conventional case, and the extended portion may be shaped as described above. It may be tapered as in the embodiment.
本発明はＤＬＬプラスチックパッケージの他、四方向か
らリードが引き出しされたフラットパック（ＰＰＰ）タ
イプのプラスチックパッケージやリードをモールド部裏
面忙折曲げするいわゆるリードレスのＰＬＣＣタイプの
プラスチックパッケージなどレジンモールド型半導体装
置全般に適用することができる。In addition to DLL plastic packages, the present invention is applicable to resin molded semiconductors such as flat pack (PPP) type plastic packages in which leads are pulled out from four directions and so-called leadless PLCC type plastic packages in which the leads are bent at the back of the mold. It can be applied to all devices.
第１図は本発明を適用したリードフレームの要部平面図
、
第２図は本発明の実施例を示すリードフレームの平面図
、
第３図は本発明によるレジンモールド型半導体装置の一
例１示す断面図である。
１・・・タブ、２・・・タブ吊りリード、３・・・リー
ド、４・・・外枠、５・・・ダム、６・・・ワイヤボン
ディング部、７・・・リード部分（テーパ一部）、８・
・・レジンモールド境界縁、９・・・半導体素子、１０
・・・コネクタワイヤ、１１・・・封止部。FIG. 1 is a plan view of a main part of a lead frame to which the present invention is applied, FIG. 2 is a plan view of a lead frame showing an embodiment of the present invention, and FIG. 3 is a diagram showing an example 1 of a resin molded semiconductor device according to the present invention. FIG. 1...Tab, 2...Tab suspension lead, 3...Lead, 4...Outer frame, 5...Dam, 6...Wire bonding part, 7...Lead part (tapered Department), 8.
...Resin mold boundary edge, 9...Semiconductor element, 10
. . . Connector wire, 11 . . . Sealing portion.
Claims (1)
前記リードフレームのリードとをワイヤボンディングし
、それをレジンにてモールドし、当該モールド後に、前
記リードを折曲げして成るレジンモールド型半導体装置
において、モールドレジン内に埋込される、ワイヤボン
ディング部を除くリード部分を、リードフレームのダム
側から当該ワイヤボンディング部にかけて次第に末広が
り状に構成して成ることを特徴とするレジンモールド型
半導体装置。 ２、特許請求の範囲第１項記載の装置において、ワイヤ
ボンディング部とリード部分とがＴ型形状に構成されて
いる、特許請求の範囲第１項記載のレジンモールド型半
導体装置。[Claims] 1. Mounting a semiconductor element on a lead frame, wire bonding the element and the leads of the lead frame, molding it with resin, and bending the leads after the molding. A resin-molded semiconductor device comprising: a lead portion, which is embedded in the mold resin, excluding a wire bonding portion, is configured to gradually expand from the dam side of the lead frame to the wire bonding portion; Resin molded semiconductor device. 2. The resin molded semiconductor device according to claim 1, wherein the wire bonding portion and the lead portion are configured in a T-shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60076543A JPS61236144A (en) | 1985-04-12 | 1985-04-12 | Resin-molded semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60076543A JPS61236144A (en) | 1985-04-12 | 1985-04-12 | Resin-molded semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61236144A true JPS61236144A (en) | 1986-10-21 |
Family
ID=13608181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60076543A Pending JPS61236144A (en) | 1985-04-12 | 1985-04-12 | Resin-molded semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61236144A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0224555U (en) * | 1988-08-04 | 1990-02-19 | ||
| JPH06334100A (en) * | 1993-05-25 | 1994-12-02 | Seiko Epson Corp | Semiconductor device and lead frame thereof |
| IT202000007411A1 (en) * | 2020-04-07 | 2021-10-07 | St Microelectronics Srl | Leadframe for semiconductor products |
-
1985
- 1985-04-12 JP JP60076543A patent/JPS61236144A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0224555U (en) * | 1988-08-04 | 1990-02-19 | ||
| JPH06334100A (en) * | 1993-05-25 | 1994-12-02 | Seiko Epson Corp | Semiconductor device and lead frame thereof |
| IT202000007411A1 (en) * | 2020-04-07 | 2021-10-07 | St Microelectronics Srl | Leadframe for semiconductor products |
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