JPS61220482A - omnidirectional photodiode - Google Patents
omnidirectional photodiodeInfo
- Publication number
- JPS61220482A JPS61220482A JP60062597A JP6259785A JPS61220482A JP S61220482 A JPS61220482 A JP S61220482A JP 60062597 A JP60062597 A JP 60062597A JP 6259785 A JP6259785 A JP 6259785A JP S61220482 A JPS61220482 A JP S61220482A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photodiode
- electrode
- external lead
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Light Receiving Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はＳｉ（シリコン）などの半導体でなる九ＩＩ電
層を有したフォトダイオードにおいて、無指向性化を図
ったものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention is directed to a photodiode having a 9II conductive layer made of a semiconductor such as Si (silicon), which is made non-directional.
（従来技術）
光信号を電気信号に変換する光電変換素子としてのフォ
トダイオードは、周知のごとく、半導体ＰＮ接合の光導
電効果と光起電力効果を利用したものであるが、一般に
、通常の構成でなる平面型のフォトダイオードにおいて
は、一定の入射方向からの光しか観測できず、また、入
射角度に依存して光強度検出値が変化する。したがって
、用途によって、例えば、分散光の強度測定などにおい
ては、かかる入射角依存性を有する光電変換素子は全て
の光を等しく検出できず、そのままでは実用に供し得な
い。(Prior art) As is well known, a photodiode as a photoelectric conversion element that converts an optical signal into an electrical signal utilizes the photoconductive effect and photovoltaic effect of a semiconductor PN junction, but generally has a normal configuration. In the planar photodiode, only light from a fixed direction of incidence can be observed, and the detected light intensity value changes depending on the angle of incidence. Therefore, depending on the application, for example, in measuring the intensity of dispersed light, a photoelectric conversion element having such incident angle dependence cannot detect all light equally, and cannot be put to practical use as it is.
そこで、そのような入射角依存性をなくすために、例え
ば素子の前方にレンズ状の部材を装着したものがあるが
、このような構成では成る程度の無指向化は図られるも
のの十分なものとは言えなかった。In order to eliminate such incident angle dependence, for example, a lens-like member is attached in front of the element, but although such a configuration can achieve some degree of non-directivity, it is not sufficient. I couldn't say it.
また、分散光の検出などにおいては、光の方向を検出し
て、演算により補正すればよいが、構成が複雑で高価ど
なり、さらに、光の方向を検出困難な場合には、そのよ
うな補正も不可能である。In addition, when detecting dispersed light, it is sufficient to detect the direction of the light and correct it by calculation, but the configuration is complicated and expensive, and furthermore, when it is difficult to detect the direction of the light, such correction is necessary. is also impossible.
また、用途として、例えば、気体と液体、固体と液体な
どの分散系内での光化学反応を解析するため、光強度分
布を測定するような場合に、二酸化チタン粉末をコーテ
ィングした拡散法を用いて光を受け、この拡散法に接続
された光学繊維でなる光プローブを経て、光電子増信管
すなわち光電変換素子へ導くものが知られている（化学
工学論文集第１０巻第５号（１９８４年）、ｐ、５５１
〜ｐ、５５６ｒ拡散球光プローブによる気−液。In addition, for example, the diffusion method coated with titanium dioxide powder can be used to measure light intensity distribution in order to analyze photochemical reactions in dispersion systems such as gas and liquid or solid and liquid. There is a known device that receives light and guides it to a photomultiplier, that is, a photoelectric conversion element, through an optical probe made of an optical fiber connected to this diffusion method (Chemical Engineering Journal Vol. 10, No. 5 (1984)) , p. 551
~p, gas-liquid with 556r diffuse bulb optical probe.
固−液分散系内の光強度分布の測定」参照）。ところが
、この構成では、素子以外に拡散法や光プローブが別個
に必要であり、構成は簡単でなく、また、上記のごとき
二酸化チタンなどをバインダー中に分散させてなる拡散
法ではバインダーの樹脂が有機溶剤に弱いため、そのよ
うな剤中では使用できないなどの制約条件があった。(See "Measurement of Light Intensity Distribution in Solid-Liquid Dispersions"). However, this configuration requires a separate diffusion method and optical probe in addition to the element, and is not easy to configure.Also, in the above-mentioned diffusion method in which titanium dioxide or the like is dispersed in a binder, the resin of the binder is Because it is sensitive to organic solvents, it has limitations such as not being able to be used in such agents.
（発明の目的）
本発明は上記従来の問題点に鑑みてなされたもので、構
成簡単にして、かつ特別な部材を別設する必要のない、
光電変換特性の入射角依存性をなくした無指向性フォト
ダイオードを提供することを目的とする。(Object of the Invention) The present invention has been made in view of the above-mentioned conventional problems, and has a simple structure and no need to separately provide special members.
An object of the present invention is to provide an omnidirectional photodiode that eliminates the incidence angle dependence of photoelectric conversion characteristics.
（発明の構成）
本発明は、一方の電極を球面状とするとともに、この球
面状電極の外表面に接して、外部リード延出部を除いて
球面状の光り電層を形成し、かつ、この光１層電層の外
表面に接して上記外部リード延出部近傍に、この外部リ
ードおよび上記電極とは絶縁された他方の電極を設けた
フォトダイオードである。(Structure of the Invention) The present invention provides one electrode having a spherical shape, and forming a spherical photoelectric layer in contact with the outer surface of the spherical electrode except for the external lead extension portion, and The photodiode is provided with the other electrode insulated from the external lead and the electrode, in contact with the outer surface of the optical single-layer electrical layer and near the external lead extension.
この構成により、先導ＩＸ！は、外部リードの延出部と
その近傍を除いて、どの方向に対しても同じ面積となり
、はぼ指向性を有さなくなる。With this configuration, leading IX! The area is the same in all directions except for the extended portion of the external lead and its vicinity, and there is no directivity.
（実施例）
第１図は本発明の一実施例による無指向性フォトダイオ
ードの断面を示し、一方の電極１が球体に形成され、そ
の外表面にＳｉなどの半導体でなる光導ｆｆ１Ｊｉ１２
が球面状に形成されたものを示す。(Embodiment) FIG. 1 shows a cross section of an omnidirectional photodiode according to an embodiment of the present invention, in which one electrode 1 is formed into a sphere, and a light guide ff1Ji12 made of a semiconductor such as Si is formed on the outer surface of the electrode 1.
indicates a spherical shape.
この光導電層２は、上記球体状の電極１から一体的に延
出させた外部リード３該当部を除いて球体の全表面に一
様に形成されている。また、光導電′１２の外表面で上
記外部リード３延出部近傍に、他方の電極４が絶縁層５
を介して外部リード３および電極１と電気的に絶縁され
た状態に設けられている。そして、本実施例では、図面
からも判るように外部リード３と絶縁ＷＪ５と電極４が
同軸状に設けられている。また、球体の電極１としては
、ステンレス、鉄、アルミニウムなどの導電性の金属あ
るいは樹脂を用いればよい。光１Ｂ’１ＷＩ２としては
、内外周方向に２層のＮＰ接合の接触電位差をもち、光
照射により光電変換機能を奏するダイオード、あるいは
ｉｍもしくはそれ以上の多層のＳｅ（セレン）などのコ
ロナ放電により帯電させた状態で露光させることにより
電荷が消滅し、静電潜像が形成される感光体材料を用い
ればよい。The photoconductive layer 2 is uniformly formed on the entire surface of the sphere except for the portion corresponding to the external lead 3 integrally extending from the spherical electrode 1. Further, the other electrode 4 is connected to the insulating layer 5 near the extension of the external lead 3 on the outer surface of the photoconductive '12.
It is provided in a state where it is electrically insulated from the external lead 3 and the electrode 1 via the external lead 3 and the electrode 1. In this embodiment, as can be seen from the drawings, the external lead 3, the insulating WJ 5, and the electrode 4 are provided coaxially. Further, as the spherical electrode 1, conductive metal such as stainless steel, iron, aluminum, or resin may be used. The light 1B'1WI2 is a diode that has a contact potential difference between two layers of NP junctions in the inner and outer peripheral directions and performs a photoelectric conversion function when irradiated with light, or a diode that is charged by corona discharge such as im or more multilayer Se (selenium). It is sufficient to use a photoreceptor material in which the electric charge is eliminated by exposure to light in a state where the electrostatic latent image is formed.
第２図は本発明の他の実施例を示す。同図において、前
述と同番号は同部材を示し、ガラス、プラスチックなど
の絶縁材でなる支持体１ａ（中空であってもよい）の外
表面に、前述の球体の電極１に該当する導＊＊ｉｂが蒸
着、コーティングなどにより形成されている。また、支
持体１ａから突出さぜた棒状体３ａの表面に、上記導’
Ｉｌｌ！！ｉｌｂと一体的に導電部３ｂが形成されるこ
とにより、前述の外部リード３該当部が構成されている
。FIG. 2 shows another embodiment of the invention. In the same figure, the same numbers as those described above indicate the same members, and a conductor corresponding to the spherical electrode 1 described above is attached to the outer surface of a support 1a (which may be hollow) made of an insulating material such as glass or plastic. *ib is formed by vapor deposition, coating, etc. Further, the above-mentioned conductor is placed on the surface of the rod-shaped body 3a protruding from the support 1a.
Ill! ! By forming the conductive portion 3b integrally with ilb, the portion corresponding to the external lead 3 described above is configured.
これらの実施例のごとく構成された光導電層２に光が照
射されることにより、半導体ＰＮ接合の光電変換すなわ
ち光導電効果および光起電力効果が得られる。すなわち
、外部リード３と電極４０問、もしくは′４＃電部３ｂ
と電極４の間が開放されている状態では、ＰＮ接合の場
合、フェルミ単位変化による変化分電圧が検出でき、ま
た、外部回 、路を短絡すると、短絡電流が流れる。By irradiating the photoconductive layer 2 constructed as in these embodiments with light, photoelectric conversion of a semiconductor PN junction, that is, a photoconductive effect and a photovoltaic effect can be obtained. That is, the external lead 3 and 40 electrodes, or '4# electrical part 3b
In the case of a PN junction, when the gap between the electrode 4 and the electrode 4 is open, a voltage change due to a Fermi unit change can be detected, and if the external circuit is shorted, a short circuit current flows.
第３図は本発明の無指向性フォトダイオードによる光電
変換特性を測定するために、光源６からコリメータ７を
経て無指向性フォトダイオード１０に光を照射させてい
る状態を示す。同図において、直交座標軸（ｘ、ｙ、ｚ
）に対する光軸のなす角度θ（２軸平面において）を０
からπまたは一πまで変化させて無指向性フォトダイオ
ード１０による光電変換により検出される光の相対強度
を測定した結果を第４図に示す。第４図において、曲線
へが本発明の場合で、広い角度０の領域（はぼ２π近（
）に亘って相対強度が低下せず、無指向性を呈している
。同図において、曲線Ｂは従来の平面状のフォトダイオ
ードの場合の特性、曲線Ｃは本発明とは逆に指向性をも
たせた場合の特性を示す。FIG. 3 shows a state in which light is irradiated from the light source 6 through the collimator 7 to the omnidirectional photodiode 10 in order to measure the photoelectric conversion characteristics of the omnidirectional photodiode of the present invention. In the figure, the orthogonal coordinate axes (x, y, z
) is the angle θ (in the biaxial plane) made by the optical axis to 0.
FIG. 4 shows the results of measuring the relative intensity of light detected by photoelectric conversion by the omnidirectional photodiode 10 while varying the intensity from π to 1π. In Fig. 4, the curve is in the case of the present invention, and the wide angle 0 region (approximately 2π)
), the relative intensity does not decrease and exhibits omnidirectionality. In the figure, curve B shows the characteristics of a conventional planar photodiode, and curve C shows the characteristics of a conventional planar photodiode with directivity.
第５図（ａ） （ｂ）はそれぞれ本発明の無指向性フォ
トダイオードと従来のフォトダイオードにおいて、平行
光線の照射方向が変わった場合の作用の違いを説明する
もので、（ａ）は本発明の場合、（ｂ）は従来の平面型
のフォトダイオードの場合で、これらの図から本発明の
場合は、光の照射方向が変わっても無指向性フォトダイ
オード１０の受光面の投影面積Ｓには変わりがないが、
従来の場合はフォトダイオード１０′の受光面の投影面
積はＳからＳ′に変化することがわかる。このように作
用するため、平行光線の場合の光強度測定は、従来では
検出値を演算により補正するか、正確に光束に対して直
角にフォトダイオード１０′が設置されるよう操作する
必要があり、測定が煩雑であるのに対し、本発明では、
そのような手間が不要となる。Figures 5(a) and 5(b) respectively explain the difference in the effect of the omnidirectional photodiode of the present invention and the conventional photodiode when the irradiation direction of parallel light is changed; In the case of the invention, (b) is the case of a conventional planar photodiode, and from these figures, in the case of the invention, even if the direction of light irradiation changes, the projected area S of the light receiving surface of the omnidirectional photodiode 10 There is no change in
It can be seen that in the conventional case, the projected area of the light receiving surface of the photodiode 10' changes from S to S'. Because of this effect, conventionally, when measuring light intensity in the case of parallel light beams, it is necessary to correct the detected value by calculation, or to operate the photodiode 10' so that it is placed exactly at right angles to the light beam. , measurement is complicated, whereas in the present invention,
Such effort becomes unnecessary.
また、多数の光源から同時に光が照射される場合の光強
度測定は、従来では、それぞれの光源に検出素子（フォ
トダイオード）を向けて測光し、その値を加算しなけれ
ばならなかったのに対し、本発明によれば同時に測定で
きる。また、光源の位置が未知の場合の光強度測定は、
従来では検出素子をいろいろな方向に向けて多数設置す
るとともに、光の来る方向を検出して換算し直さな【プ
ればならないのに対して、本発明では測定したいところ
に検出素子を設置するのみでよい。また、光路が反射板
などにより分割されている場合の光強度測定は、従来で
は光路長などを考慮して補正しなければならないのに対
して、本発明ではそのような必要がない。また、光源が
時間的に移動する場合は、従来では光源の移動に合わせ
て検出素子の角度を追従させる必要があったが、本発明
ではそのような必要がない。また、物体の移動などを検
知する手段として通常の７オトセンサとして使用する場
合にも、従来のフォトセンサでは光軸を正確に一致させ
る必要があったのに対し、本発明では、光軸合わせに自
由度がある。In addition, to measure light intensity when light is emitted simultaneously from multiple light sources, conventionally it was necessary to point a detection element (photodiode) at each light source, measure the light, and then add the values. On the other hand, according to the present invention, measurements can be made simultaneously. In addition, when measuring light intensity when the position of the light source is unknown,
In the past, a large number of detection elements had to be installed facing various directions, and the direction in which the light was coming had to be detected and converted again.In contrast, with the present invention, the detection element is installed where the measurement is desired. Only . Furthermore, when measuring the light intensity when the optical path is divided by a reflector or the like, conventional methods require correction in consideration of the optical path length, but the present invention does not require such correction. Furthermore, when the light source moves temporally, conventionally it was necessary to make the angle of the detection element follow the movement of the light source, but this is not necessary in the present invention. Furthermore, when used as a normal 7-photo sensor as a means of detecting the movement of an object, it was necessary to precisely align the optical axes with conventional photosensors, but with the present invention, it is necessary to align the optical axes. There is a degree of freedom.
さらには、不均一系における散乱光の測定においては、
従来では計算によって光強度を求めることは無理であり
、また特別に拡散法と光プローブを準備する必要があっ
たのに対し、本発明ではそのような問題はなく、構成簡
単にして、かつ容易に測定することができる。Furthermore, in measuring scattered light in a heterogeneous system,
In the past, it was impossible to determine the light intensity by calculation, and it was necessary to prepare a special diffusion method and optical probe, but the present invention does not have such problems and can be easily configured. can be measured.
なお、本発明による無指向性については、上述いずれの
実施例においても、光導Ｎ層２を形成していない外部リ
ードの延出部に当る部分（外部リード３．ｌＷ部３ｂ、
電極４）を除いた球面状の光導ｆｆ１ｆｆ２のほぼ全面
が寄与しているものである。Regarding the non-directivity according to the present invention, in any of the above-mentioned embodiments, the portion corresponding to the extending portion of the external lead where the light guide N layer 2 is not formed (external lead 3, lW portion 3b,
Almost the entire surface of the spherical light guide ff1ff2, excluding the electrode 4), contributes.
また、光導電層２部分が有機溶剤に対して耐蝕性のある
３ｉなどの材質であれば、使用上の制約条件が緩和され
る。Further, if the photoconductive layer 2 portion is made of a material such as 3i which is corrosion resistant to organic solvents, the restrictions on use are relaxed.
（発明の効果）
以上のように本発明によれば、球面状とした一方の電極
の外表面に接して球面状の光導電層を形成し、かつ、こ
の光Ｓ電層の外表面に接して、上記一方の電極の外部リ
ード延出部近傍に他方の電極を設けたことにより、外部
リード延出部近傍の外周側の電極部分以外はどの方向に
対しても同じ面積の感光体となり、どの方向に対しても
指向性を有しないフォトダイオードとなる。したがって
、光電変換素子として使うときであって、光強度測定に
際してフォトダイオードの設置に自由度が太き（、しか
も散乱光、収束および発散性の光、あるいは複数個の光
源によって照射されるような場合の真の光強度測定を、
極めて簡便にかつ、正確に行なうことができるなど、優
れた効果を奏する。(Effects of the Invention) As described above, according to the present invention, a spherical photoconductive layer is formed in contact with the outer surface of one of the spherical electrodes, and a spherical photoconductive layer is formed in contact with the outer surface of the photo-S conductive layer. By providing the other electrode near the external lead extension of one of the electrodes, the photoreceptor has the same area in all directions except for the electrode portion on the outer peripheral side near the external lead extension. The photodiode has no directivity in any direction. Therefore, when using it as a photoelectric conversion element, there is a large degree of freedom in installing the photodiode when measuring light intensity (in addition, it is difficult to install the photodiode with scattered light, convergent and diverging light, or when it is irradiated by multiple light sources). true light intensity measurement in case,
It has excellent effects, such as being extremely simple and accurate.
第１図は本発明の一実施例による無指向性フォトダイオ
ードの断面図、第２図は本発明の他の実施例による断面
図、第３図は本発明の無指向性フォトダイオードの光電
変換特性を測定する状態を示す斜視図、第４図は本発明
と従来の）Ａトダイオードにおける光の照射角度に対す
る光の相対強度特性図、第５図（ａ） （ｂ）は本発明
と従来のフォトダイオードにおける平行光線が照射され
た時の作用説明図である。
１・・・電極、１ｂ・・・導電層、２・・・光導電層、
３・・・外部リード、３ｂ・・・導電部、４・・・電極
、５・・・絶縁層。
特許出願人 三田工業株式会社
代 理 人 弁理士 小谷悦司
同 弁理士 長１）正
同 弁理士 板谷康夫
第 １ 図
第２図
第３図
第 ４ 図
一θ呻
第 ５ 図FIG. 1 is a cross-sectional view of an omnidirectional photodiode according to one embodiment of the present invention, FIG. 2 is a cross-sectional view of another embodiment of the present invention, and FIG. 3 is a photoelectric conversion of the omnidirectional photodiode of the present invention. A perspective view showing the state in which the characteristics are measured. FIG. 4 is a diagram of the relative intensity characteristics of light with respect to the light irradiation angle in the A-to-diode (of the present invention and the conventional one). FIG. 5 (a) and (b) are the present invention and the conventional FIG. 3 is an explanatory diagram of the effect when a parallel light beam is irradiated on the photodiode of FIG. DESCRIPTION OF SYMBOLS 1... Electrode, 1b... Conductive layer, 2... Photoconductive layer,
3... External lead, 3b... Conductive part, 4... Electrode, 5... Insulating layer. Patent Applicant Mita Kogyo Co., Ltd. Agent Patent Attorney Etsushi Kotani Patent Attorney Cho 1) Masaru Patent Attorney Yasuo Itaya Figure 1 Figure 2 Figure 3 Figure 4 Figure 1 θ Figure 5
Claims (1)
極の外表面に接して、外部リード延出部を除いて球面状
の光導電層を形成し、かつ、この光導電層の外表面に接
して上記外部リード延出部近傍に、この外部リードおよ
び上記電極とは絶縁された他方の電極を設けたことを特
徴とする無指向性フォトダイオード。1. One electrode is spherical, and a spherical photoconductive layer is formed in contact with the outer surface of this spherical electrode, excluding the external lead extension, and the outer surface of this photoconductive layer is An omnidirectional photodiode characterized in that the other electrode is provided in contact with and near the external lead extension portion and is insulated from the external lead and the electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60062597A JPS61220482A (en) | 1985-03-27 | 1985-03-27 | omnidirectional photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60062597A JPS61220482A (en) | 1985-03-27 | 1985-03-27 | omnidirectional photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61220482A true JPS61220482A (en) | 1986-09-30 |
Family
ID=13204891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60062597A Pending JPS61220482A (en) | 1985-03-27 | 1985-03-27 | omnidirectional photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61220482A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5352922A (en) * | 1991-07-25 | 1994-10-04 | Symbol Technologies, Inc. | Wand readers |
| WO1998015983A1 (en) * | 1996-10-09 | 1998-04-16 | Josuke Nakata | Semiconductor device |
| US5767500A (en) * | 1996-02-06 | 1998-06-16 | Symbol Technologies, Inc. | Automatic identification of hardware |
| WO1999010935A1 (en) * | 1997-08-27 | 1999-03-04 | Josuke Nakata | Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material |
| WO1999038215A1 (en) * | 1998-01-23 | 1999-07-29 | Josuke Nakata | Solar battery module for optical electrolysis device and optical electrolysis device |
| AU715515B2 (en) * | 1996-10-09 | 2000-02-03 | Sphelar Power Corporation | Semiconductor device |
| US6213399B1 (en) | 1991-07-25 | 2001-04-10 | Symbol Technologies, Inc. | Multi-channel signal processing in an optical reader |
| JP2007514301A (en) * | 2003-11-03 | 2007-05-31 | サステイナブル・テクノロジーズ・インターナショナル・プロプライエタリー・リミテッド | Multilayer photovoltaic device on the coating surface |
| CN102931307A (en) * | 2012-11-06 | 2013-02-13 | 华东理工大学 | Light-emitting diode (LED) device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840310A (en) * | 1971-09-23 | 1973-06-13 | ||
| JPS54128300A (en) * | 1978-03-20 | 1979-10-04 | Ortec Inc | Radiant ray detector |
| JPS59193077A (en) * | 1983-04-18 | 1984-11-01 | Clarion Co Ltd | Non-directional photo diode |
-
1985
- 1985-03-27 JP JP60062597A patent/JPS61220482A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840310A (en) * | 1971-09-23 | 1973-06-13 | ||
| JPS54128300A (en) * | 1978-03-20 | 1979-10-04 | Ortec Inc | Radiant ray detector |
| JPS59193077A (en) * | 1983-04-18 | 1984-11-01 | Clarion Co Ltd | Non-directional photo diode |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6213399B1 (en) | 1991-07-25 | 2001-04-10 | Symbol Technologies, Inc. | Multi-channel signal processing in an optical reader |
| US5506392A (en) * | 1991-07-25 | 1996-04-09 | Symbol Technologies, Inc. | Photodetector for use in reading optical information symbols |
| US6991168B2 (en) | 1991-07-25 | 2006-01-31 | Symbol Technologies, Inc. | Multi-channel signal processing in an optical reader |
| US5352922A (en) * | 1991-07-25 | 1994-10-04 | Symbol Technologies, Inc. | Wand readers |
| US6435412B2 (en) | 1991-07-25 | 2002-08-20 | Symbol Technologies, Inc. | Multi-channel signal processing in an optical reader |
| US5767500A (en) * | 1996-02-06 | 1998-06-16 | Symbol Technologies, Inc. | Automatic identification of hardware |
| AU715515B2 (en) * | 1996-10-09 | 2000-02-03 | Sphelar Power Corporation | Semiconductor device |
| US6204545B1 (en) | 1996-10-09 | 2001-03-20 | Josuke Nakata | Semiconductor device |
| WO1998015983A1 (en) * | 1996-10-09 | 1998-04-16 | Josuke Nakata | Semiconductor device |
| US6294822B1 (en) | 1997-08-27 | 2001-09-25 | Josuke Nakata | Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material |
| WO1999010935A1 (en) * | 1997-08-27 | 1999-03-04 | Josuke Nakata | Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material |
| US6198037B1 (en) | 1998-01-23 | 2001-03-06 | Josuke Nakata | Solar battery module for optical electrolysis device and optical electrolysis device |
| WO1999038215A1 (en) * | 1998-01-23 | 1999-07-29 | Josuke Nakata | Solar battery module for optical electrolysis device and optical electrolysis device |
| JP2007514301A (en) * | 2003-11-03 | 2007-05-31 | サステイナブル・テクノロジーズ・インターナショナル・プロプライエタリー・リミテッド | Multilayer photovoltaic device on the coating surface |
| CN102931307A (en) * | 2012-11-06 | 2013-02-13 | 华东理工大学 | Light-emitting diode (LED) device |
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