JPS61210622A - semiconductor manufacturing equipment - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to improvements in semiconductor manufacturing equipment for forming thin films on substrates (wafers).

[Conventional technology]

BACKGROUND OF THE INVENTION As semiconductor technology progresses, the high degree of integration of semiconductor devices, including ultra-large scale integrated circuits (VLSI), is being promoted. On the other hand, since the high degree of integration of semiconductor circuits is achieved by miniaturizing the elements,
There is a need for semiconductor manufacturing equipment that can form fine and highly accurate pattern forming techniques as well as uniform and good thin films.

Among the semiconductor manufacturing equipment that forms such thin films, in particular, 1.
, wafer ) onto the gas phase or substrate surface! There are thin films grown on a substrate through a chemical reaction to form strips.

FIG. 2 is a conceptual diagram showing the conventional semiconductor manufacturing apparatus 10 described above.

This semiconductor manufacturing apparatus 10 is a so-called cylinder type vapor phase growth apparatus, and includes a reaction vessel 14 composed of a cylinder 12 formed of a quartz tube, and
Reaction part 1 consisting of susceptor holder 16 housed in 4
8, a heat generating section 22 consisting of a heating lamp 20 that heats this reaction section 18 from the outside of the container 14, and an inlet port 24 that supplies a reaction gas (arrow A) consisting of an element constituting the thin film material into the container 14. and an outlet port 26 for discharging gas and the like generated during the reaction. The susceptor holder 16 of the reaction section 18 has a tapered surface, and a plurality of susceptors 30 on which a plurality of substrates 28 are placed are arranged on the circumferential surface 16a. The susceptor holder 16 also has a motor 34 and a shaft 3 disposed above a lid 32 that covers the top surface of the cylinder 12.
The motor 34 rotates the susceptor holder 16 at a relatively slow speed, and the heat generating part 22
The heating of the susceptor 30 and the substrate 28 is made uniform. On the other hand, an inlet port 26 for the reaction gas (arrow A) is arranged on the side of the lid 32, and the reaction gas supplied into the cylinder 12 through this inlet port 26 passes through the surface of the substrate 28. After that, a part of it is discharged to the outside of the container 14 from an outlet port 26 disposed in a plate 38 covering the bottom surface of the cylinder 12 along with the gas produced during the reaction. Note that while the reactive gas (arrow A) passes over the surface of the substrate 28 housed in the container 14, a thin film is deposited on the surface of the substrate 28 by a known chemical change. Note that the cylinder 12 is cooled by a cooling device (not shown), so that crystals do not precipitate on the inner peripheral surface of the cylinder 12 and do not impermeate the thermal energy of the heat generating portion 22. Further, in FIG. 2, reference numeral 40 is a thermocouple for detecting the temperature of the substrate 28.

[Problem that the invention seeks to solve]

By the way, in order to achieve good uniformity of the thin film deposited on the surface of the substrate 28, it is necessary to properly control the flow rate and flow pattern of the reaction gas, the pressure inside the container 14, the temperature of the substrate 28, etc. However, according to the conventional semiconductor manufacturing apparatus 10 described above, the cylinder 12 and the susceptor 30 have an interval and an angle specific to the apparatus, so that the flow rate and the flow rate of the reaction gas flowing between the cylinder 12 and the susceptor 30 are limited. It was not possible to control the flow pattern depending on the pressure inside the reaction vessel 14, the temperature conditions of the substrate 28, etc. For this reason, in the conventional apparatus 10, the thickness of the thin film varies along the flow direction of the reaction gas, so-called Down.
Stream (down stream) effects tend to occur, and the thickness of the thin film formed on the substrate 28 becomes non-uniform, causing variations in properties such as resistivity.

[Means for solving problems]

In this invention, a reaction gas consisting of an element constituting a thin film material is supplied into a reaction vessel containing a substrate heated by a heat generating part, and a thin film is formed on the surface of the substrate by a chemical reaction in the gas phase or on the surface of the substrate. In a semiconductor manufacturing apparatus configured to perform deposition, the heat generating part is supported within the reaction vessel via a flexible arm, and the spacing and arrangement angle of the heat generating part with respect to the substrate can be changed.

[Effect]

According to the above-mentioned device, the heat generating part is supported in the reaction vessel via a flexible arm, so the interval and arrangement angle of the heat generating part with respect to the substrate can be changed to control the flow rate and the flow rate of the reaction gas flowing on the substrate surface. , whose flow pattern is controlled.

〔Example〕

Hereinafter, one embodiment of the semiconductor manufacturing apparatus according to the urine invention will be described in detail.

FIG. 1 is a conceptual diagram showing a semiconductor manufacturing apparatus 50 of the present invention.
The same parts as in FIG. 2 are designated by the same reference numerals.

In this semiconductor manufacturing apparatus 50, a plurality of heat generating parts 54 supported by flexible arms 52 are disposed inside a reaction vessel 14 made up of a cylinder 12. The heat generating section 54 is composed of a heat lamp 20 and a heat-permeable hollow container 56 that houses the lamp 20. A flexible pipe 58 is connected to the hollow container 56, and a cooling medium (arrow B) is supplied from a cooling device (not shown) into the hollow container 56 through the pipe 58.
6. Cool. Note that the pipe 58 is made of a flexible pipe. Therefore, when the reaction gas is supplied into the reaction vessel 14, crystals do not precipitate on the surface of the hollow vessel 56, thereby preventing the vessel 56 from becoming thermally impermeable. On the other hand, the arm 52 has two bendable joints 60 and 62.
．． By appropriately changing the bending angle of 62, the position of heat generating portion 54 is changed. Therefore, by changing the distance and arrangement angle between the substrate 28 and the heat generating section 54, the flow rate and flow pattern of the reaction gas (arrow A) passing through the surface of the substrate 28 can be controlled.

In the above embodiment, the inlet pipe 24 for supplying the reaction gas (arrow A) is arranged on the top surface of the lid 32.

In addition, in the above embodiment, the pipe 58 that supplies the cooling medium
is provided independently and communicated with the hollow container 56 of the heat generating part 54 to cool the hollow container 56. However, the present invention is of course not limited to the above embodiments, and for example, the hollow container 56 The arm 52 that supports the cooling medium may be constructed of a pipe or the like through which a cooling medium can pass, and the cooling medium may be supplied into the hollow container 56 through this pipe to cool the container 56.

Further, in the above embodiment, the reaction vessel 14 is constituted by the cylinder 12, but the present invention is of course not limited to the above embodiment, and may be constituted by a bell jar (bell-shaped container).

Furthermore, in the above embodiment, since the heat generating section 54 is arranged inside the reaction vessel 14, it is not necessary to construct the reaction vessel 14 from a heat permeable material such as a quartz tube as in the conventional case. It may be configured.

〔Effect of the invention〕

In this invention, the heat generating part is placed in the reaction vessel via a flexible arm, and is hidden so that the flow rate and flow pattern of the reaction gas passing through the substrate surface can be controlled. 1°, which can suppress variations in film thickness, specific resistance, etc. as much as possible.

[Brief explanation of drawings]

FIG. 1 is a conceptual diagram showing a conventional semiconductor manufacturing apparatus, and FIG. 2 is a conceptual diagram showing a conventional semiconductor manufacturing apparatus. 14... Reaction container, 20... Heat lamp, 28...
・Substrate (wafer), 50...Semiconductor manufacturing equipment, 52
...Arm, 54...Heating part, 56...Hollow container, 58...Pipe.

Claims (2)

[Claims] (1) The substrate housed in the reaction vessel is heated by the heat generating part, and a reaction gas consisting of the elements constituting the thin film material is supplied into the reaction vessel, and the substrate surface is heated by a chemical reaction in the gas phase or on the substrate surface. In a semiconductor manufacturing apparatus for forming a thin film, the heat generating part is supported in the reaction vessel via a flexible arm, and the distance and arrangement angle between the substrate and the heat generating part are changed. A semiconductor manufacturing device characterized by: (2) Claim (1) characterized in that the heat generating section is a heating lamp, a heat-permeable hollow container that houses the lamp, and a pipe that supplies a cooling medium into the hollow container. Semiconductor manufacturing equipment as described in .