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JPS6481318A - Ashing of organic polymer film and device therefor - Google Patents

Ashing of organic polymer film and device therefor

Info

Publication number
JPS6481318A
JPS6481318A JP23734087A JP23734087A JPS6481318A JP S6481318 A JPS6481318 A JP S6481318A JP 23734087 A JP23734087 A JP 23734087A JP 23734087 A JP23734087 A JP 23734087A JP S6481318 A JPS6481318 A JP S6481318A
Authority
JP
Japan
Prior art keywords
resist
electrodes
substrate
ashing
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23734087A
Other languages
Japanese (ja)
Inventor
Tsunetoshi Arikado
Haruo Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23734087A priority Critical patent/JPS6481318A/en
Publication of JPS6481318A publication Critical patent/JPS6481318A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To cleanly remove a resist completely by heating only the surface of the resist on a substrate surface in an ashing process by the use of a flash lamp and the like together with cooling the substrate. CONSTITUTION:A device is composed of a vacuum vessel 21, a gas introducing inlet 22, an outlet 23 and electrodes 26, a print plate 28 is spread on the electrodes 26, and a resist-coated specimen 27 is put thereon. High frequency electric power is applied from high frequency electrodes 34 on the electrodes 26 cooled by a water cooling pipe 30, plasma is produced and gas such as oxygen is excited. A window 24 made of zinc sulfide is provided on the upper part of the vacuum vessel 21, and the surface of the specimen 27 is irradiated with infrared light and the like from a light source 25. The light source 25 is a flash lamp, lighted intermittently and a lighting cycle time can be regulated. Therefore, when only the surface of the resist is momentarily heated by infrared light and the like, the resist can be removed completely without leaving residue with cooling the substrate 27 in the reduction-to-ash process by oxygen plasma.
JP23734087A 1987-09-24 1987-09-24 Ashing of organic polymer film and device therefor Pending JPS6481318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23734087A JPS6481318A (en) 1987-09-24 1987-09-24 Ashing of organic polymer film and device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23734087A JPS6481318A (en) 1987-09-24 1987-09-24 Ashing of organic polymer film and device therefor

Publications (1)

Publication Number Publication Date
JPS6481318A true JPS6481318A (en) 1989-03-27

Family

ID=17013932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23734087A Pending JPS6481318A (en) 1987-09-24 1987-09-24 Ashing of organic polymer film and device therefor

Country Status (1)

Country Link
JP (1) JPS6481318A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005252186A (en) * 2004-03-08 2005-09-15 Semiconductor Leading Edge Technologies Inc Etching apparatus and etching method
KR100685732B1 (en) * 2001-06-05 2007-02-23 삼성전자주식회사 Photoresist Residue Removal Device
WO2009072402A1 (en) * 2007-12-04 2009-06-11 Meidensha Corporation Method of removing resist and apparatus therefor
US8187389B2 (en) 2007-05-23 2012-05-29 Meidensha Corporation Method of removing resist and apparatus therefor
WO2014199808A1 (en) * 2013-06-10 2014-12-18 ウシオ電機株式会社 Ashing apparatus
US20180166296A1 (en) * 2016-12-14 2018-06-14 Mattson Technology, Inc. Atomic Layer Etch Process Using Plasma In Conjunction With A Rapid Thermal Activation Process
KR20220085026A (en) * 2020-12-14 2022-06-21 매슨 테크놀로지 인크 Workpiece processing apparatus with plasma and thermal processing systems

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100685732B1 (en) * 2001-06-05 2007-02-23 삼성전자주식회사 Photoresist Residue Removal Device
JP2005252186A (en) * 2004-03-08 2005-09-15 Semiconductor Leading Edge Technologies Inc Etching apparatus and etching method
US8187389B2 (en) 2007-05-23 2012-05-29 Meidensha Corporation Method of removing resist and apparatus therefor
WO2009072402A1 (en) * 2007-12-04 2009-06-11 Meidensha Corporation Method of removing resist and apparatus therefor
US8574369B2 (en) 2007-12-04 2013-11-05 Meidensha Corporation Method of removing resist and apparatus therefor
JP2014239181A (en) * 2013-06-10 2014-12-18 ウシオ電機株式会社 Ashing equipment
WO2014199808A1 (en) * 2013-06-10 2014-12-18 ウシオ電機株式会社 Ashing apparatus
US9402317B2 (en) 2013-06-10 2016-07-26 Ushio Denki Kabushiki Kaisha Ashing apparatus
US20180166296A1 (en) * 2016-12-14 2018-06-14 Mattson Technology, Inc. Atomic Layer Etch Process Using Plasma In Conjunction With A Rapid Thermal Activation Process
KR20190077545A (en) * 2016-12-14 2019-07-03 맷슨 테크놀로지, 인크. Atomic layer etching process using plasma with rapid thermal activation process
JP2020502794A (en) * 2016-12-14 2020-01-23 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． Atomic layer etching process using plasma in conjunction with rapid thermal activation process
US10580661B2 (en) * 2016-12-14 2020-03-03 Mattson Technology, Inc. Atomic layer etch process using plasma in conjunction with a rapid thermal activation process
US11062912B2 (en) 2016-12-14 2021-07-13 Mattson Technology, Inc. Atomic layer etch process using plasma in conjunction with a rapid thermal activation process
US12159789B2 (en) 2016-12-14 2024-12-03 Beijing E-Town Semiconductor Technology, Co., Ltd Atomic layer etch process using plasma in conjunction with a rapid thermal activation process
KR20220085026A (en) * 2020-12-14 2022-06-21 매슨 테크놀로지 인크 Workpiece processing apparatus with plasma and thermal processing systems

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